CN101515602A - Transparent conductive film glass - Google Patents
Transparent conductive film glass Download PDFInfo
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- CN101515602A CN101515602A CNA2009100292598A CN200910029259A CN101515602A CN 101515602 A CN101515602 A CN 101515602A CN A2009100292598 A CNA2009100292598 A CN A2009100292598A CN 200910029259 A CN200910029259 A CN 200910029259A CN 101515602 A CN101515602 A CN 101515602A
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- low resistance
- resistance grid
- glass
- grid
- nesa coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A transparent conductive film glass comprises a substrate glass and a transparent conductive film; a resistance grid is arranged between the substrate glass and the transparent conductive film, and the transparent conductive film isolates the low-resistance gird form the external environment; wherein the introduction of the low-resistance grid remarkably reduces the resistance, collects the electrons and realizes the directional movement of the electrons; meanwhile the low-resistance grid is coated with a compact transparent conductive film to isolate the low-resistance grid from the environment, thus protecting the low-resistance grid from being influenced by environment and guaranteeing the stability and reliability of the device.
Description
One, technical field
The invention belongs to electro-conductive glass technology field, particularly a kind of improvement of transparent conducting film glass.
Two, background technology
Transparent conducting film glass is a kind of transparency conducting film glass, mainly comprise metal oxide and composite multi-component oxide film material thereof, it is wide to have the forbidden band, common light electrical characteristics such as visible range light transmission height and resistivity are low, be widely used in solar cell, the plane shows, specific function window coating and other photoelectric device fields, but general sull mean square resistance is bigger, in large-area electro-conductive glass application device, increase along with the electric transmission distance, resistance is big more, loss is serious more, greatly reduce the operating efficiency of device
Three, summary of the invention
Technical problem:
The objective of the invention is to deficiency, provide a kind of and both can reduce resistance, reduce loss of electrons, make that electronics is directed to be moved, have the electro-conductive glass of reliable rows, stability simultaneously again at existing transparent conducting film glass.
Technical scheme: technical solution of the present invention is:
A kind of transparent conducting film glass comprises base plate glass and nesa coating, is provided with the low resistance grid between described base plate glass and the nesa coating, and nesa coating is isolated with low resistance grid and external environment.Wherein, above-mentioned low resistance grid are selected organic low resistive metal slurry for use, adopt silk screen print method, are printed in the upper surface of base plate glass, and that the low resistance grid are printed as is netted, wire or the shape pattern that circles round.Above-mentioned nesa coating is In
2O
3, ZnO, SnO
2, TiO
2Or above-mentioned oxide is with the arbitrary proportion composite material mixed, and what have has also mixed the F ion, adopts magnetron sputtering method, ultrasonic spray pyrolysis sedimentation or sol-gel process to be layed in low resistance grid upper surface.
Wherein, magnetron sputtering method is that the simple metal or the metal alloy of the made particular oxides correspondence of employing is sputtering target material, and by oxidation filming, perhaps directly adopting made particular oxides and composite multi-component oxide thereof is the direct sputter of target.The ultrasonic spray pyrolysis sedimentation is for preparing required solution earlier, ultrasonic vibration is with solution atomization again, be carried into the heated glass substrate by carrier gas, experiment parameters such as the size of the distance between adjusting underlayer temperature, nozzle and substrate, substrate rotary speed, atomization quantity and carrier gas air pressure can deposit go out uniform film.Inorganic salts or the liquor-saturated salt of metal that sol-gel (Sol-Gel) method will be easy to the metallic compound of hydrolysis react with water in certain solvent, pass through hydrolysis and polycondensation process and gelation gradually, processing such as drying, sintering makes the film of required electropane at last again.
Beneficial effect:
The invention discloses a kind of transparent conducting film glass, comprise base plate glass and nesa coating, be provided with the low resistance grid between base plate glass and nesa coating, nesa coating is isolated with low resistance grid and external environment.In the present invention, the adding of low resistance grid, in broad area device, can reduce the resistance of point-to-point transmission: owing to the oxide-film major part as nesa coating is a semiconductor, its general resistance is higher, so the resistance of electro-conductive glass side is bigger, increasing along with transparency area, the resistance of broad area device point-to-point transmission strengthens along with the increasing of distance, if but after the pre-buried low resistance grid of point-to-point transmission, this phenomenon disappears immediately, the resistance of point-to-point transmission generally only is slightly larger than the resistance of equal length low resistance grid, and much smaller than the resistance of cloth low resistance grid point-to-point transmission not.Though the introducing of low resistance grid greatly reduces resistance; collected electronics; and realized the directed movement of electronics; but low resistance resistance grid itself are affected by the external environment bigger; perishable; easily oxidation; reliability, the stability of device have been influenced; and the present invention covers the nesa coating of one deck densification and overcome this defective just on the low resistance grid: nesa coating will be isolated with low-resistance electric grating ring border; thereby protected the low-resistance electric grid not affected by environment, guaranteed the stability and the reliability of device.
Among the present invention, low resistance grid precursor is selected organic low resistive metal slurry for use, adopts silk screen print method, is printed in the upper surface of base plate glass.The adhesiveness of organic low resistive metal slurry and glass is better; Compare with the enamel mode of using in the prior art in the past more, the low resistance grid of printing-type, simplified technological process greatly, silk screen print method is directly drawn out the silk screen of different hollow outs on half tone, directly brush, make the gap of design and operability lower greatly, can realize simply cutting blocks for printing and directly printing of complicated circuit substantially.
In the present invention, the low resistance grid are printed as netted, the wire or the shape pattern that circles round.The low resistance grid of netted pattern satisfy the connection in series-parallel requirement, can form any connection in series-parallel complicated circuit; The low resistance grid of wire pattern satisfy the different components connection request, resistance are significantly descended; The low resistance grid of shape pattern of circling round satisfy many devices connection request, reach the effect of assembling device.
In the present invention, nesa coating is In
2O
3, ZnO, SnO
2, TiO
2Or above-mentioned oxide is with the arbitrary proportion composite material mixed, for increasing conductivity and corrosion resistance, what have has also mixed the F ion, and adopting has magnetron sputtering method, ultrasonic spray pyrolysis sedimentation, sol-gel process, chemical vapour deposition technique to be layed in low resistance grid upper surface.Common light electrical characteristics such as the oxide material of In, Zn, Sn or Ti has that the forbidden band is wide, visible range light transmission height and resistivity are low.The characteristics of magnetron sputtering method are that technology controlling and process is good, can be on the large tracts of land matrix even film forming; Ultrasonic spray pyrolysis sedimentation characteristics are that the film equipment needed thereby is simple, and process cycle is short, and the prices of raw and semifnished materials are cheap, can prepare and the suitable high-quality thin film of physical deposition method performance.The characteristics of sol-gel (Sol-Gel) method are that the technical process temperature is low, and the material preparation process is easy to control, can make some and be difficult to obtain with conventional method or unavailable at all material; Goods good uniformity, especially multicomponent goods, its uniformity can reach molecule or atomic scale; Goods purity height; Can the large tracts of land film forming aspect the preparation film.
Four, description of drawings
Fig. 1 is the structural representation of transparent conducting film glass of the present invention;
Fig. 2 does not brush the transparent conducting film glass of low resistance grid and the resistance effect comparison diagram of the transparent conducting film glass of brushing the low resistance grid among the embodiment 1;
Fig. 3 does not brush the transparent conducting film glass of low resistance grid and the resistance effect comparison diagram of the transparent conducting film glass of brushing the low resistance grid among the embodiment 2;
Fig. 4 does not brush the transparent conducting film glass of low resistance grid and the resistance effect comparison diagram of the transparent conducting film glass of brushing the low resistance grid among the embodiment 3;
Fig. 5 does not brush the transparent conducting film glass of low resistance grid and the resistance effect comparison diagram of the transparent conducting film glass of brushing the low resistance grid among the embodiment 4;
Fig. 6 does not brush the transparent conducting film glass of low resistance grid and the resistance effect comparison diagram of the transparent conducting film glass of brushing the low resistance grid among the embodiment 5;
Five, embodiment
Following examples are more of the present invention giving an example, and should not regarded as limitation of the invention.
Embodiment 1:
A kind of transparent conducting film glass comprises base plate glass and nesa coating, is provided with the low resistance grid between base plate glass and the nesa coating, and nesa coating is isolated with low resistance grid and external environment.
Wherein, base plate glass: adopt ordinary optical glass.
The low resistance grid: with middle temperature aluminium paste is material, adopts silk screen print method, and one-step print is in the upper surface of base plate glass, and the low resistance grid are printed as netted pattern.Printing process is: adopt the JG6080 screen process press, and 300 order silk screens, the low resistance grid are made 450 ℃ of following sintering half an hour in the printing back, and prepared low resistance grid line is wide to be 0.5mm.
Nesa coating: be In
2O
3And SnO
2Composite material, In
2O
3And SnO
2The quality proportioning is 1: 1, adopts magnetron sputtering method to be layed in low resistance grid upper surface.Preparation method: adopt highly purified indium oxide and stannic oxide powder, mix at 1: 1, adopt powder technology to sinter solid target (taking a sample test target body density 99.5%) into again, adopt homemade JGC-4OSY type 500W magnetron sputtering coater by mass ratio.Radio frequency sputtering coating process parameter is as follows: the base vacuum degree is less than 1X10
-3Pa, sputtering power are 100W, and substrate temperature is 300 ℃, and target is 8cm to the distance of cloth low-resistance electric grid base plate glass, and sputter is cleaned with high concentration KOH aqueous isopropanol again.
Fig. 2 is being all of surveying with four shaking the needle methods low resistance grid of cloth that magnetron sputtering method makes and the not relation comparison of cloth low resistance grid electro-conductive glass resistance and distance.As we know from the figure: the sheet resistance of the electro-conductive glass of cloth low resistance grid will be much larger than the resistance of cloth low resistance grid, the resistance of cloth low resistance grid remain at cloth low resistance gate resistance not 1/3 to 1/4 between, as seen the introducing of low resistance grid greatly reduces resistance, the corrosion resistance of while glass, case hardness, high temperature resistant property all do not have obvious decline.
Embodiment 2:
A kind of transparent conducting film glass comprises base plate glass and nesa coating, is provided with the low resistance grid between base plate glass and the nesa coating, and nesa coating is isolated with low resistance grid and external environment.
Wherein, base plate glass: adopt ordinary optical glass.
The low resistance grid: select for use the low-temperature silver slurry to be material, adopt silk screen print method, one-step print is in the upper surface of base plate glass, and the low resistance grid are printed as the wire pattern.Printing process is: adopt the JG6080 screen process press, and 300 order silk screens, the low resistance grid are made 150 ℃ of following sintering half an hour in the printing back, and prepared low resistance grid line is wide to be 0.5mm.
Nesa coating: be SnO
2: F laminated film, SnO
2With the quality proportioning of F be 5: 1, adopt the ultrasonic spray pyrolysis sedimentation to be layed in low resistance grid upper surface.Preparation method: get SnCl
45H
2O uses H
2O and CH
3It is 5% methanol solvate that OH is mixed with the quality percentage composition, adds NH again
4F, NH
4F accounts for SnCl
45H
2The ratio of O is 2% (mass percent).During Experiment Preparation, (the ultrasonic vibration frequency is 1.7MHz to piezoelectric ceramic transducer, diameter 25mm, atomization quantity 400～500dm
3h
-1Ultrasonic vibration with the solution atomization that is prepared, be carried into the low-resistance electric of the cloth grid glass substrate of heating by carrier gas.Experiment parameters such as the size of the distance between adjusting underlayer temperature, nozzle and substrate, substrate rotary speed, atomization quantity and carrier gas air pressure can deposit go out uniform SnO on substrate
2: the F film gets final product with the cleaning of high concentration KOH aqueous isopropanol again.
Fig. 3 compares for being all of surveying with the four shaking the needle methods not cloth low resistance grid that the ultrasonic spray pyrolysis sedimentation makes and the relation of cloth low resistance grid electro-conductive glass resistance and distance.As we know from the figure: the sheet resistance of the electro-conductive glass of cloth low resistance grid will be much larger than the resistance of cloth low resistance grid, the resistance of the cloth low resistance grid beginning the highest be not cloth low resistance gate resistance 1/10, minimum only is between 1/20.As seen the introducing of low resistance grid greatly reduces resistance, the corrosion resistance of while glass, and case hardness, high temperature resistant property does not all have obvious decline.
Embodiment 3:
A kind of transparent conducting film glass comprises base plate glass and nesa coating, is provided with the low resistance grid between base plate glass and the nesa coating, and nesa coating is isolated with low resistance grid and external environment.
Wherein, base plate glass: adopt ordinary optical glass.
The low resistance grid: select for use low temperature copper slurry to be material, adopt silk screen print method, one-step print is in the upper surface of base plate glass, and the low resistance grid are printed as the shape pattern that circles round.Printing process: adopt the JG6080 screen process press to adopt, 300 order silk screens, the low resistance grid are made 230 ℃ of following sintering half an hour in the printing back, and prepared low resistance grid line is wide to be 0.5mm.
Nesa coating: be In
2O
3: SnO
2Composite material film, In
2O
3With SnO
2Mass ratio be 1: 0.8, adopt sol-gel (Sol-Gel) method to be layed in low resistance grid upper surface.Preparation method: with InCl
3, SnCl
4Be precursor (mass ratio 1: 0.8), ethanol is the solvent obtain solution, be 20 ℃ in temperature and leave standstill formation colloidal sol, spin-coating method is after cloth low-resistance electric grid glass is thrown film, heat-treat in Muffle furnace, heat treated temperature is about 450 ℃, and the time is 20min, obtain nesa coating, get final product with the cleaning of high concentration KOH aqueous isopropanol again.
The not cloth low resistance grid that Fig. 4 makes for sol-gel (Sol-Gel) method of surveying with four shaking the needle methods that is all compare with the relation of cloth low resistance grid electro-conductive glass resistance and distance.As we know from the figure: the sheet resistance of the electro-conductive glass of cloth low resistance grid will be much larger than the resistance of cloth low resistance grid, and the resistance of cloth low resistance grid remains at 1/5 to 1/6 of cloth low resistance gate resistance not.So the introducing of low resistance grid greatly reduces resistance, the corrosion resistance of while glass, case hardness, high temperature resistant property does not all have obvious decline.
Embodiment 4:
A kind of transparent conducting film glass comprises base plate glass and nesa coating, is provided with the low resistance grid between base plate glass and the nesa coating, and nesa coating is isolated with low resistance grid and external environment.
Wherein, base plate glass: adopt ordinary optical glass.
The low resistance grid: select for use the low-temperature silver slurry to be precursor material, adopt silk screen print method, one-step print is in the upper surface of base plate glass, and the low resistance grid are printed as the wire pattern.Printing process: adopt the JG6080 screen process press, 300 order silk screens, the low resistance grid are made 150 ℃ of following sintering half an hour in the printing back, and prepared low resistance grid line is wide to be 0.5mm.
Nesa coating: be ZnO film, adopt magnetron sputtering method to be layed in low resistance grid upper surface.The preparation method: used target is ZnO (a 99.99%) ceramic target, adopt homemade JGC-4OSY type 500W magnetron sputtering coater, radio frequency sputtering coating process parameter is as follows: the base vacuum degree is less than 1X10-3Pa, sputtering power is 100W, substrate temperature is 200 ℃, and target is 7cm to the distance of cloth low-resistance electric grid base plate glass.Sputter is cleaned with high concentration KOH aqueous isopropanol again.
Fig. 5 is being all of surveying with four shaking the needle methods low resistance grid of cloth that sputtering method makes and the not relation comparison of cloth low resistance grid electro-conductive glass resistance and distance.As we know from the figure: the sheet resistance of the electro-conductive glass of cloth low resistance grid will be much larger than the resistance of cloth low resistance grid, the resistance of the cloth low resistance grid beginning the highest be not cloth low resistance gate resistance 1/9, minimum only is 1/14.So the introducing of low resistance grid greatly reduces resistance, the corrosion resistance of while glass, case hardness, high temperature resistant property does not all have obvious decline.
Embodiment 5:
A kind of transparent conducting film glass comprises base plate glass and nesa coating, is provided with the low resistance grid between base plate glass and the nesa coating, and nesa coating is isolated with low resistance grid and external environment.
Wherein, base plate glass: adopt ordinary optical glass.
The low resistance grid: select for use the low-temperature silver slurry to be precursor material, adopt silk screen print method, one-step print is in the upper surface of base plate glass, and the low resistance grid are printed as the wire pattern.Printing process is: adopt the JG6080 screen process press, and 300 order silk screens, the low resistance grid are made 150 ℃ of following sintering half an hour in the printing back, and prepared low resistance grid line is wide to be 0.5mm.
Nesa coating: the SnO that for the quality proportioning is 1: 0.6
2And TiO
2Laminated film adopts magnetron sputtering method to be layed in low resistance grid upper surface.Preparation method: with SnO
2And TiO
2Powder is to mix at 1: 0.6 by mass ratio, adopts powder technology to sinter solid target (taking a sample test target body density 99.5%) into again, adopts homemade JGC-4OSY type 500W magnetron sputtering coater, and radio frequency sputtering coating process parameter is as follows: the base vacuum degree is less than 1X10
-3Pa, sputtering power are 100W, and substrate temperature is 200 ℃, and target is 7cm to the distance of cloth low-resistance electric grid base plate glass, and sputter is cleaned with high concentration KOH aqueous isopropanol again.
Fig. 6 is being all of surveying with four shaking the needle methods low resistance grid of cloth that sputtering method makes and the not relation comparison of cloth low resistance grid electro-conductive glass resistance and distance.As we know from the figure: as we know from the figure: the sheet resistance of the electro-conductive glass of cloth low resistance grid will be much larger than the resistance of cloth low resistance grid, and the resistance of cloth low resistance grid remains at 1/5 to 1/6 of cloth low resistance gate resistance not.So the introducing of low resistance grid greatly reduces resistance, the corrosion resistance of while glass, case hardness, high temperature resistant property does not all have obvious decline.
Claims (7)
1. transparent conducting film glass, comprise base plate glass (1) and nesa coating (3), it is characterized in that being provided with low resistance grid (2) between described base plate glass (1) and nesa coating (3), nesa coating (3) is isolated with low resistance grid (2) and external environment.
2. according to the described transparent conducting film glass of claim 1, it is characterized in that it is material that described low resistance grid (2) are selected organic low resistive metal slurry for use.
3. according to the described transparent conducting film glass of claim 1, it is characterized in that described low resistance grid (2) adopt silk screen print method to be printed in the upper surface of base plate glass (1).
4. according to the described transparent conducting film glass of claim 1, it is characterized in that described low resistance grid (2) are netted, the wire or the shape pattern that circles round.
5. according to the described transparent conducting film glass of claim 1, it is characterized in that described nesa coating (3) is In
2O
3, ZnO, SnO
2, TiO
2Or above-mentioned oxide is with the arbitrary proportion composite material mixed.
6. according to the described transparent conducting film glass of claim 5, it is characterized in that described nesa coating (3) also mixes the F ion.
7. according to the described transparent conducting film glass of claim 1, it is characterized in that described nesa coating (3) adopts magnetron sputtering method, ultrasonic spray pyrolysis sedimentation or sol-gel process to be layed in the upper surface of low resistance grid (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100292598A CN101515602A (en) | 2009-04-07 | 2009-04-07 | Transparent conductive film glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100292598A CN101515602A (en) | 2009-04-07 | 2009-04-07 | Transparent conductive film glass |
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| Publication Number | Publication Date |
|---|---|
| CN101515602A true CN101515602A (en) | 2009-08-26 |
Family
ID=41039967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100292598A Pending CN101515602A (en) | 2009-04-07 | 2009-04-07 | Transparent conductive film glass |
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|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623080A (en) * | 2012-04-16 | 2012-08-01 | 上海交通大学 | Transparent conductive film based on solution method/printing coating process and preparation method thereof |
| CN107547042A (en) * | 2017-09-30 | 2018-01-05 | 丁文兰 | A kind of energy-saving circuit system and intelligent building glass |
-
2009
- 2009-04-07 CN CNA2009100292598A patent/CN101515602A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623080A (en) * | 2012-04-16 | 2012-08-01 | 上海交通大学 | Transparent conductive film based on solution method/printing coating process and preparation method thereof |
| CN107547042A (en) * | 2017-09-30 | 2018-01-05 | 丁文兰 | A kind of energy-saving circuit system and intelligent building glass |
| CN107547042B (en) * | 2017-09-30 | 2023-11-07 | 丁文兰 | Energy-saving circuit system and intelligent building glass |
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Open date: 20090826 |