CN101512757A - 具有爆炸保护的功率半导体模块 - Google Patents
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Abstract
本发明公开了一种用于能量分配的功率半导体模块(2),其具有至少一个功率半导体(7)、用于连接功率半导体模块(2)的接线柱(9,10)和外壳(11),该功率半导体模块就是在出现电弧时也能提供爆炸保护,本发明提出,每个功率半导体(7)和每个接线柱(9,10)都被设置在外壳(11)中,该外壳(11)具有用于在爆炸情况下受控地排出热气和/或等离子体的排气道(12)。
Description
技术领域
本发明涉及一种用于能量分配的功率半导体模块,具有至少一个功率半导体、用于连接功率半导体模块的接线柱和外壳。
背景技术
这样的功率半导体模块由DE9839422公开。在那里描述了用于半导体模块的爆炸保护,其中半导体被设置在保护外壳中,该保护外壳抵挡在功率半导体爆炸时抛出的碎片。以这种方式防止因为爆炸而伤害人员或邻近的组件。该公知的功率半导体组件的缺陷是,该爆炸保护不适于在出现电弧的情况下保证足够的保护。
发明内容
由此本发明要解决的技术问题是,提供一种本文开始部分所述类型的功率半导体模块,用该功率半导体模块就是在出现电弧时也能提供爆炸保护。
本发明的技术问题这样解决:每个功率半导体和每个接线柱都被设置在外壳中,其中外壳具有用于在爆炸情况下受控地排出热气和/或等离子体的排气道。
按照本发明,不仅是功率半导体本身被设置在组件中,而且功率半导体电子电路的全部组件都被设置在外壳中,在此外壳本身也是功率半导体模块的部分。功率半导体电子电路例如包括全部的功率半导体,也就是全部的可控功率半导体及与其并联的续流二极管,以及用于控制功率半导体的控制单元。只有功率半导体模块的接线柱的自由端被引出外壳,以便将其连接到其它组件,例如连接到按照本发明的其它功率半导体模块上。由一个功率半导体在故障情况下引起的电弧,由此在外壳内部产生并且由外壳向外屏蔽。为了将爆炸力和产生的热气受控地向外排出,设置向外的排气道。在此这样引导排气道并且这样合适地定位其喷管,使得逸出的热气或抛出的碎片既不会损坏邻近的组件也不会伤害到人员。
优选将排气道用具有大内表面的、可流经的耐温填充材料来填充。通过本发明的该优选扩展,逸出的热气或等离子体在从排气道出来之前由填充材料冷却。填充材料的内表面越大,冷却越多。此外填充材料抑制在故障情况下爆炸时形成的加速的粒子。此外通过填充材料提供减压。
在与此相关的合适的扩展中,耐温填充材料例如由陶瓷制成。在此陶瓷合适地这样构造,使得在该陶瓷中提供许多内部通道和贯穿的细孔,从而使该陶瓷始终可以被热气或等离子体穿流。此外该陶瓷是耐温的并且能够最大程度不受损坏地经受住在电弧形成时产生的高温。
在本发明的一种优选变形中耐温填充材料是金属海绵(Metallschaum)。合适的金属海绵可以从市场获得并且本身容易被购进。其具有大的内表面以及小的重量。此外其热容量及其耐温能力都足以经受住在电弧情况下的高的等离子体温度。此外金属海绵具有抵抗能力,从而可以十分有效地抑制粒子并且还提供特别高的降压。
按照与此相关的合适的扩展,金属海绵是开有多孔的金属海绵。通过金属海绵的打开的细孔保证了热气和等离子体的足够穿流性,从而高效地防止了整个外壳的爆炸。
与此不同的是,耐温填充材料是毛状金属丝。毛状金属丝形成所谓的混乱的金属纤维球,也被称为“钢丝球(Putzrasch)”。毛状金属丝通常被用作火焰止回保护(Flammrueckschlagsicherung)并且例如可以比金属海绵成本更低地购进。
在本发明范围内原则上外壳可以由任何合适的具有足够机械强度的耐温外壳构成。但是外壳合适地是塑料外壳或金属外壳。塑料外壳的塑料合适地通过纤维来加强。
功率半导体优选包括可关断的功率半导体。可关断功率半导体既可以通过电气控制信号从截止状态转换到导通状态,在该截止状态中经过该功率半导体的电流中断,在该导通状态中电流流经该可关断功率半导体。此外还可以主动借助控制脉冲促使可关断功率半导体从其导通状态转换到其截止状态。可关断功率半导体对专业人员是公知的并且可以从市场获得。可关断功率半导体例如是IGBT、IGCT、GTO等。
按照本发明的优选实施例,功率半导体模块具有第一接线柱、第二接线柱、设置在外壳外的能量存储器、和与该能量存储器并联的电路形式的具有两个串联的可控功率半导体的功率半导体支路,其中每个可控功率半导体与一个反向续流二极管并联,并且功率半导体支路的第一可控功率半导体的发射极和与该第一可控功率半导体对应的反向续流二极管的阳极的连接点形成第一接线柱,以及功率半导体支路的可控功率半导体和续流二极管的连接点形成第二接线柱。这样的电路作为马夸特(Marquardt)电路也是公知的。马夸特电路具有两个开关状态,其中在第一开关状态下降落在接线柱上的电压等于零,而在第二开关状态下等于能量存储器的电压。
与此不同的是,功率半导体模块具有第一接线柱、第二接线柱、能量存储器、和与该能量存储器并联的电路形式的具有两个串联的可控功率半导体的功率半导体支路,其中每个可控功率半导体与一个反向续流二极管并联,并且功率半导体支路的第一可控功率半导体的集电极和与该第一可控功率半导体对应的反向续流二极管的阴极的连接点形成第一接线柱,以及功率半导体支路的可控功率半导体和续流二极管的连接点形成第二接线柱。这是马夸特电路的替换实施方式,其基本上具有相同的特性。
此外本发明还涉及一种具有由按照本发明的功率半导体模块组成的串联电路的换流器整流支路。
此外本发明还涉及一种具有由上面提到的换流器整流支路构成的桥式电路的换流器。
换言之本发明还涉及一种换流器,其由按照本发明的功率半导体模块的串联电路组成。这样的换流器也被称为多级换流器。其使得可以逐级地接通或断开单个功率半导体模块的电压并由此可以更精细和更准确地调节电压。
附图说明
本发明其它合适的实施方式和优点是以下结合附图对本发明的实施例的描述的内容,其中相同的组件用相同的附图标记表示,其中:
图1示出了按照本发明的换流器支路的一种实施例,
图2示出了按照本发明的功率半导体模块的一种实施例的等效电路图,
图3示出了按照本发明的功率半导体模块的一个实施例的等效电路图,以及
图4示出了没有能量存储器的、按照本发明的功率半导体模块的实施例。
具体实施方式
图1示出了按照本发明的换流器支路1的一种实施例,这些换流器支路1由功率半导体模块2的串联电路构成。在此换流器整流支路1互相串联。在换流器整流支路1内部的功率半导体模块2的数量按照相关的应用特别是按照所需的电压而定。由此功率半导体模块2的数量可以在数十个直到数百个之间变化。
在换流器整流支路1之间设置了交流电压接头3,用于与交流电压网的一相连接。在每个换流器整流支路1的远离交流电压接头3的末端设置了直流电压接头4。由此每个换流器整流支路1被设置在交流电压接头3和直流电压接头4之间。由此按照本发明的换流器的一种实施例在要连接三相交流电压网的情况下例如由六个换流器整流支路构成,这些换流器整流支路按照本身是公知的桥式电路的形式互相连接。在此可以是所谓的六脉冲桥式电路但是也可以是12脉冲桥式电路。
图2示出了按照本发明的功率半导体模块2的一种实施例的等效电路图。可以看出,每个功率半导体模块2具有电容器5形式的能量存储器。电容器5与功率半导体支路6并联,其中功率半导体支路6由两个所谓的IGBT的串联电路构成。每个IGBT 7与一个续流二极管8反向并联。由可控功率半导体7以及反向二极管8组成的组件和控制电子电路一起在以下被称为功率电子电路。功率电子电路与电容器5并联。此外在图2中还可以看出第一接线柱9以及第二接线柱10,其中第一接线柱9与可控功率半导体7的发射极相连并且同时与与该可控功率半导体7对应的反向二极管8的阳极相连,即换言之与它们的连接点相连。第二接线柱10与可控功率半导体7的连接点以及与反向二极管8的连接点相连。如果在接线柱9和10之间设置的可控功率半导体7处于其导通状态,则零电压降落在接线柱9和10之间。相反地如果所说的功率半导体处于其截止状态,而不是在接线柱9和10之间设置的可控功率半导体7处于其导通状态,则施加在电容器5上的电压降落在接线柱9和10之间。
图3示出了按照图2的功率半导体模块2的替换实施方式。与在图2中示出的马夸特电路的变形不同,在图3中第一接线柱9与可控功率半导体7的集电极和与该可控功率半导体7并联的反向续流二极管8的阴极相连。第二接线柱10与可控功率半导体7和续流二极管8的连接点相连。在这两个图中示出的马夸特电路的实施例互相等效并且由此具有相同的特性。
图4示出了按照本发明的功率半导体模块2的实施例。可以看出,功率半导体模块2除了具有可控功率半导体7和接线柱9和10之外,还具有外壳11,其在所示出的实施例中由金属,如钢板制成。此外在外壳11中还可以看到两个排气道12,这些排气道12朝向接线柱9和10部分地开放。由此在外壳11中出现电弧时,热气通过排气道12向外排出,在此排气道12的喷嘴这样构造,使得可以可靠避免损坏设置在外壳11外的组件。为了冷却排气道12中的热气,此外还设置了具有大内表面的金属海绵。换言之金属海绵是开有细孔的,从而其可以由热气或其它爆炸气体穿流。在此由于大的表面而出现大的热交换面积和在金属海绵和所逸出的热气之间的大的温度交换,热气以这种方式被冷却。此外金属海绵还防止粒子的逸出,在此还附加地提供了减压。
Claims (12)
1.一种用于能量分配的功率半导体模块(2),具有至少一个功率半导体(7)、用于连接该功率半导体模块(2)的接线柱(9,10)和外壳(11),其特征在于,每个功率半导体(7)和每个接线柱(9,10)都被设置在外壳(11)中,该外壳(11)具有用于在爆炸情况下受控地排出热气和/或等离子体的排气道(12)。
2.根据权利要求1所述的功率半导体模块(2),其特征在于,对所述排气道(12)用具有大内表面的、可流经的耐温填充材料进行填充。
3.根据权利要求2所述的功率半导体模块(2),其特征在于,所述耐温填充材料由陶瓷制成。
4.根据权利要求2所述的功率半导体模块(2),其特征在于,所述耐温填充材料是金属海绵。
5.根据权利要求4所述的功率半导体模块(2),其特征在于,所述金属海绵是开有多孔的金属海绵。
6.根据权利要求2所述的功率半导体模块(2),其特征在于,所述耐温填充材料是毛状金属丝。
7.根据上述权利要求中任一项所述的功率半导体模块(2),其特征在于,所述外壳(11)是塑料外壳或金属外壳。
8.根据上述权利要求中任一项所述的功率半导体模块(2),其特征在于,所述功率半导体(7)包括可关断的功率半导体。
9.根据上述权利要求中任一项所述的功率半导体模块(2),其特征在于,具有第一接线柱(9)、第二接线柱(10)、能量存储器(5),和与该能量存储器(5)并联电路形式的具有两个串联的可控功率半导体(7)的功率半导体支路(6),其中每个可控功率半导体(7)与一个反向续流二极管(8)并联,并且功率半导体支路(6)的第一可控功率半导体(7)的发射极和与该第一可控功率半导体(7)对应的反向续流二极管(8)的阳极的连接点形成第一接线柱(9),以及功率半导体支路(6)的可控功率半导体(7)和续流二极管(8)的连接点形成第二接线柱(10)。
10.根据权利要求1至7中任一项所述的功率半导体模块,其特征在于,具有第一接线柱(9)、第二接线柱(10)、能量存储器(5),和与该能量存储器(5)并联的电路形式的具有两个串联的可控功率半导体(7)的功率半导体支路(6),其中每个可控功率半导体(7)与一个反向续流二极管(8)并联,并且功率半导体支路(6)的第一可控功率半导体(7)的集电极和与该第一可控功率半导体(7)对应的反向续流二极管(8)的阴极的连接点形成第一接线柱(9),以及功率半导体支路(6)的可控功率半导体(7)和续流二极管(8)的连接点形成第二接线柱(10)。
11.一种换流器整流支路(1),具有由按照上述权利要求中任一项所述的功率半导体模块(2)构成的串联电路。
12.一种换流器,具有由根据权利要求11所述的换流器整流支路(1)组成的桥式电路。
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JP (1) | JP4901959B2 (zh) |
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DK2407015T3 (da) | 2009-03-13 | 2013-02-11 | Siemens Ag | Effekthalvledermodul med lagvist opbyggede isolerende sidevægge |
EP2724369B1 (en) | 2011-06-21 | 2018-06-13 | ABB Schweiz AG | Power semiconductor housing with contact mechanism |
WO2013101910A1 (en) * | 2011-12-30 | 2013-07-04 | General Electric Company | Failure protection for a power delivery system |
US9178410B2 (en) * | 2012-01-06 | 2015-11-03 | General Electric Company | Adaptive power conversion system |
JP5865104B2 (ja) * | 2012-02-09 | 2016-02-17 | 株式会社日立製作所 | 電圧型電力変換器の電流制御装置及び電圧型電力変換器の電流制御方法 |
DE102013215592A1 (de) * | 2013-08-07 | 2015-02-12 | Siemens Aktiengesellschaft | Leistungselektronische Schaltung mit planarer elektrischer Kontaktierung |
EP3007220A1 (en) * | 2014-10-10 | 2016-04-13 | ABB Technology AG | Power semiconductor device having protection against explosion or rupture |
JP6301857B2 (ja) | 2015-02-24 | 2018-03-28 | 株式会社東芝 | 半導体モジュール |
GB2544999A (en) * | 2015-12-03 | 2017-06-07 | General Electric Technology Gmbh | Improvements in or relating to power semiconductor modules |
KR101926716B1 (ko) * | 2017-04-27 | 2018-12-07 | 엘에스산전 주식회사 | 파워반도체모듈 |
DE102018204625A1 (de) * | 2018-03-27 | 2019-10-02 | Siemens Aktiengesellschaft | Gehäuse für einen Umrichter, Endstufe eines Umrichters mit einem derartigen Gehäuse, Umrichter sowie Luftfahrzeug mit einem Umrichter |
CN113424428B (zh) | 2019-02-28 | 2022-07-08 | 日立能源瑞士股份公司 | 带有撬棒电路的转换器单元 |
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US4274106A (en) * | 1977-11-07 | 1981-06-16 | Mitsubishi Denki Kabushiki Kaisha | Explosion proof vibration resistant flat package semiconductor device |
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DE3070497D1 (en) * | 1980-02-01 | 1985-05-23 | Bbc Brown Boveri & Cie | Explosion-protected semiconductor component arrangement |
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