CN101510513A - Method for preparing zinc oxide thin-film transistor by sol gel method - Google Patents
Method for preparing zinc oxide thin-film transistor by sol gel method Download PDFInfo
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- CN101510513A CN101510513A CNA2009100712880A CN200910071288A CN101510513A CN 101510513 A CN101510513 A CN 101510513A CN A2009100712880 A CNA2009100712880 A CN A2009100712880A CN 200910071288 A CN200910071288 A CN 200910071288A CN 101510513 A CN101510513 A CN 101510513A
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- diethanol amine
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Abstract
The invention provides a method for preparing a zinc oxide thin-film transistor by a sol-gel method; the method comprises the following steps: firstly, an isopropyl alcohol solution containing zinc acetate and diethanolamine is prepared and coated on an ATO layer of ATO/ITO/glass matrix in a spin coating or tensioned membrane manner, wherein, the thicknesses of the ATO layer and an ITO layer are respectively below 400nm; preheating is carried out for 10 minutes to 15 minutes at the temperature from 150 DEG C to 2000 DEG C and then heat treatment is carried out for 15 minutes to 20 minutes at the temperature from 400 DEG C to 650 DEG C; the operations of coating, preheating and heat treatment are repeated till the thickness of a formed zinc oxide thin film reaches 30nm to 100nm; and an evaporation method is used for preparing source-drain electrode arrays on the surface of the zinc oxide thin film. The zinc oxide thin-film field-effect transistor that is prepared by adopting the method has a zinc oxide conductor thin film with ideal crystal structure and conductor performance, and overcomes the defects of high production cost in methods other than solution methods, and poor performance of zinc oxide thin-film field-effect transistors prepared by other solution methods.
Description
One, technical field
That the present invention relates to is a kind of preparation method of semiconductor device, specifically a kind of preparation method of zinc-oxide film field-effect transistor.
Two, background technology
The field effect thin-film transistor has important use and is worth in fields such as screen display, sensing and signal transmission.Zinc oxide since its have superior semiconducting behavior, the transparency is good, environmental stability is good and advantage such as nontoxic negativity, and becomes the preferred material for preparing the field effect thin-film transistor.Zinc oxide thin-film transistor adopted in preparation at present as methods such as magnetron sputtering, chemical vapour deposition (CVD) and pulsed laser depositions, had cost height, shortcoming that production efficiency is low.It is low to have a cost based on the preparation method of solution process, is fit to produce in batches.But the performance of common resulting zinc-oxide film field-effect transistor is undesirable.
Three, summary of the invention
The object of the present invention is to provide a kind of can reducing production costs, the method for the Prepared by Sol Gel Method zinc oxide thin-film transistor of enhancing product performance.
The object of the present invention is achieved like this:
Preparation contains the aqueous isopropanol of zinc acetate and diethanol amine, wherein the mol ratio of zinc acetate and diethanol amine be 0.1:1 to 10:1, the molar concentration of zinc ion in solution is that 0.01M is to 0.5M; To contain the aqueous isopropanol spin coating of zinc acetate and diethanol amine or membrane is coated on and deposits tin indium oxide (ITO) layer on the ATO/ITO/glass[glass basis as gate electrode layer, deposition of aluminum titanium oxide (ATO) layer is as dielectric insulation layer above the indium tin oxide layer] on the ATO layer of matrix, the thickness of ATO layer and ITO layer is respectively below 400nm; 150 ℃ to 200 ℃ preheating 1O-15 minute, then at 400 ℃ to 650 ℃ following heat treatment 15-20 minutes; Repeat to apply, preheating and heat treatment operation to the zinc oxide films film thickness that forms reach 30nm-100nm; With evaporation coating method at zinc-oxide film surface preparation source-drain electrode array.
The present invention can also comprise:
1, to contain the aqueous isopropanol of zinc acetate and diethanol amine be that the mol ratio of preparing zinc acetate and diethanol amine respectively is 1: 1 in described preparation, and the concentration of zinc ion is first solution of 0.055M in the solution; The mol ratio of zinc acetate and diethanol amine is 1: 1, and the concentration of zinc ion is second solution of 0.120M in the solution; The mol ratio of zinc acetate and diethanol amine is 1: 1, and the concentration of zinc ion is the 3rd solution of 0.255M in the solution; Describedly repeat to apply, preheating and heat treatment operation reach 30nm-100nm to the zinc oxide films film thickness that forms and apply with first solution, second solution and the 3rd solution respectively, and carry out preheating, heat treatment respectively.
2, described with evaporation coating method at zinc-oxide film surface preparation source-drain electrode array, the electrode material that is plated is a kind of in aluminium, zinc, indium, silver or the tin indium oxide (ITO).
The present invention is that a kind of method of the Prepared by Sol Gel Method zinc-oxide film field-effect transistor based on the solution process has that cost is low, carrier mobility is high, the field-effect transistor performance of the high excellence of switch current ratio and can realize high efficiency production.The zinc oxide semiconductor thin film that method of the present invention obtains has excellent crystal structure and carrier mobility characteristic, the field effect n type zinc oxide thin-film transistor of preparation has that cost is low, carrier mobility is high, the field-effect transistor performance of the high excellence of switch current ratio.Be expected to become the expensive preparation field effect thin-film transistor that replaces other, as sputtering method etc., and based on the ideal candidates of the high field effect thin-film transistor of the transparency difference of silicon class material and production process environmental pollution.
Description of drawings
Fig. 1 is the structural representation of the zinc-oxide film field-effect transistor of method preparation of the present invention.
Fig. 2 is the scanning electron microscope image on the zinc-oxide film surface of method preparation of the present invention.
Fig. 3 is a process chart of the present invention.
Four, embodiment
(1) preparation precursor solution:
Precursor solution 1: the mol ratio of zinc acetate and diethanol amine is 1: 1, and the concentration of zinc ion is 0.055M. in the solution
Precursor solution 2: the mol ratio of zinc acetate and diethanol amine is 1: 1, and the concentration of zinc ion is 0.120M. in the solution
Precursor solution 3: the mol ratio of zinc acetate and diethanol amine is 1: 1, and the concentration of zinc ion is 0.255M. in the solution
(2) ATO/ITO/glass is carried out air plasma and handle, precursor solution 1 spin coating surface, 1200 rev/mins of rotating speeds, spin coating 65 seconds.180 ℃ of following preheatings then 10 minutes.Put into 550 ℃ heating furnace rapidly, heat effect 20 minutes.
(3) precursor solution 2 spin coatings are adopted in the operation of repetition (2).
(4) precursor solution 3 spin coatings are adopted in the operation of repetition (2).
(5) vacuum evaporated aluminium or zinc are at zinc-oxide film surface preparation source-drain electrode array.
Test with Hewlett-Packard 4156B performance test analysis instrument, prepared zinc oxide field-effect thin-film transistor at source-drain voltage 40-50V and source gate voltage sweep limits is-5V-50V under, measured saturated carrier mobility is greater than 2cm
2V
-1s
-1, switch current ratio is greater than 105.
Claims (3)
1, a kind of method of Prepared by Sol Gel Method zinc oxide thin-film transistor, it is characterized in that: preparation contains the aqueous isopropanol of zinc acetate and diethanol amine, wherein the mol ratio of zinc acetate and diethanol amine be 0.1:1 to 10:1, the molar concentration of zinc ion in solution is that 0.01M is to 0.5M; To contain on the aqueous isopropanol spin coating of zinc acetate and diethanol amine or the ATO layer that membrane is coated on the ATO/ITO/glass matrix, the thickness of ATO layer and ITO layer is respectively below 400nm; 150 ℃ to 200 ℃ preheating 10-15 minute, then at 400 ℃ to 650 ℃ following heat treatment 15-20 minutes; Repeat to apply, preheating and heat treatment operation to the zinc oxide films film thickness that forms reach 30nm-100nm; With evaporation coating method at zinc-oxide film surface preparation source-drain electrode array.
2, according to the method for right 1 described Prepared by Sol Gel Method zinc oxide thin-film transistor, it is characterized in that: the aqueous isopropanol that described preparation contains zinc acetate and diethanol amine is that the mol ratio of preparing zinc acetate and diethanol amine respectively is 1: 1, and the concentration of zinc ion is first solution of 0.055M in the solution; The mol ratio of zinc acetate and diethanol amine is 1: 1, and the concentration of zinc ion is second solution of 0.120M in the solution; The mol ratio of zinc acetate and diethanol amine is 1: 1, and the concentration of zinc ion is the 3rd solution of 0.255M in the solution; Describedly repeat to apply, preheating and heat treatment operation reach 30nm-100nm to the zinc oxide films film thickness that forms and apply with first solution, second solution and the 3rd solution respectively, and carry out preheating, heat treatment respectively.
3, the method for Prepared by Sol Gel Method zinc oxide thin-film transistor according to claim 1 and 2, it is characterized in that: described with evaporation coating method at zinc-oxide film surface preparation source-drain electrode array, the electrode material that is plated is a kind of in aluminium, zinc, indium, silver or the tin indium oxide.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100712880A CN101510513B (en) | 2009-01-16 | 2009-01-16 | Method for preparing zinc oxide thin-film transistor by sol gel method |
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| CN2009100712880A CN101510513B (en) | 2009-01-16 | 2009-01-16 | Method for preparing zinc oxide thin-film transistor by sol gel method |
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| CN101510513A true CN101510513A (en) | 2009-08-19 |
| CN101510513B CN101510513B (en) | 2010-07-07 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102505450A (en) * | 2011-09-30 | 2012-06-20 | 陕西科技大学 | Quaternized zinc oxide sol as textile finishing agent and preparation method thereof |
| CN108054225A (en) * | 2017-12-13 | 2018-05-18 | 浙江海洋大学 | A kind of cuprous oxide solar cell based on nano structure membrane electrode and preparation method thereof |
| CN108546936A (en) * | 2018-05-09 | 2018-09-18 | 武汉理工大学 | A kind of method of low temperature preparation high-performance ZnO base transparent conductive oxide film |
| CN109695028A (en) * | 2017-10-20 | 2019-04-30 | Tcl集团股份有限公司 | Zinc-oxide film and preparation method thereof, luminescent device |
-
2009
- 2009-01-16 CN CN2009100712880A patent/CN101510513B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102505450A (en) * | 2011-09-30 | 2012-06-20 | 陕西科技大学 | Quaternized zinc oxide sol as textile finishing agent and preparation method thereof |
| CN109695028A (en) * | 2017-10-20 | 2019-04-30 | Tcl集团股份有限公司 | Zinc-oxide film and preparation method thereof, luminescent device |
| CN109695028B (en) * | 2017-10-20 | 2020-12-25 | Tcl科技集团股份有限公司 | Zinc oxide film, preparation method thereof and light-emitting device |
| CN108054225A (en) * | 2017-12-13 | 2018-05-18 | 浙江海洋大学 | A kind of cuprous oxide solar cell based on nano structure membrane electrode and preparation method thereof |
| CN108546936A (en) * | 2018-05-09 | 2018-09-18 | 武汉理工大学 | A kind of method of low temperature preparation high-performance ZnO base transparent conductive oxide film |
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| Publication number | Publication date |
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| CN101510513B (en) | 2010-07-07 |
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