CN101493481A - Photoelectric integration electric-field sensor based on period polarized ferroelectric crystal - Google Patents
Photoelectric integration electric-field sensor based on period polarized ferroelectric crystal Download PDFInfo
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- CN101493481A CN101493481A CNA2009100785190A CN200910078519A CN101493481A CN 101493481 A CN101493481 A CN 101493481A CN A2009100785190 A CNA2009100785190 A CN A2009100785190A CN 200910078519 A CN200910078519 A CN 200910078519A CN 101493481 A CN101493481 A CN 101493481A
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- 230000005684 electric field Effects 0.000 title claims abstract description 61
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to an integrated photovoltaic electric field sensor based on a periodically polarized ferroelectric crystal and belongs to the electric field measurement technology field. The integrated photovoltaic electric field sensor based on the periodically polarized ferroelectric crystal comprises a periodically polarized ferroelectric crystal with electro-optic effect, and an optical waveguide which is formed within one or more polarized periods on the surface of the crystal along the direction parallel to a domain wall and has a Mach-Zehnder interferometer structure; the optical waveguide comprises an input section, an output section and a middle section which is formed by two parallel arms; and the two arms of the optical waveguide are respectively positioned in an area with the polarization direction opposite in one or more polarized periods. In the periodically polarized ferroelectric crystal, the polarized periods are distributed on the whole chip. The invention can significantly improve the temperature stability of the existing integrated photovoltaic electric field sensor, further reduces the influence of the electric field sensor on the electric field to be measured, and simultaneously combines all the other advantages of the existing integrated photovoltaic electric field sensor.
Description
Technical field
The invention belongs to the electric field measurement technical field, particularly a kind of photoelectric integration electric-field sensor based on period polarized ferroelectric crystal is particularly suited for isolation and measuring high electric field under the high electric field magnitude situation.
Background technology
Under high voltage or electromagnetic pulse environment, can produce very strong electric field.It is carried out measuring key parts is exactly electric-field sensor.This sensor is not only wanted to tolerate the very high highfield of amplitude, and wants and can measure it; For accurate measurement, also require electric field influence to be measured less.
In high-voltage engineering electric field measurement field, the size sensor of traditional electrical magnetic induction principle is bigger, and integral body is metal construction, has a strong impact on electric field to be measured, and powerup issue also is difficult to solve.Utilize the photoelectric integration electric-field sensor of integrated optics technique development to compare with traditional sensor and has greater advantage, its size is little, bandwidth, can survey the field intensity height, for the measuring high electric field in high-voltage engineering field provides a kind of effective means.Its typical structure as shown in Figure 1, employing has the ferroelectric wafer (such as the lithium niobate crystal chip of directions X cutting commonly used) 101 of electrooptical effect, form the optical waveguide 102 of Mach-Zehnder interferometer structure (M-Z structure) with titanium diffusion or proton exchange method in this wafer surface, its interlude is two optical waveguides (two arms) parallel to each other, and metal electrode 103 is laid on one section surface in two optical waveguides parallel to each other.
Affact on the optical waveguide 102 by metal electrode 103 adding electric field 0 to be measured (arrow is this direction of an electric field among the figure), modulated the output power of optical waveguide, after converting voltage signal to by photoelectric conversion device, the variation that detects output voltage obtains adding electric field 0 to be measured.
In actual applications, because the pyroelectric effect of the ferroelectric crystal (as lithium columbate crystal) that is adopted, when sensor temperature changed, crystals can produce and add the parallel pyroelectricity electric field of electric field 0 direction to be measured, and be superimposed interferometry with the former.Facts have proved that this interference is given is convenient, measure electric field has exactly brought great difficulty.
At this problem, often need leave standstill sensor for a long time in the measurement, make itself and ambient air temperature reach abundant balance, the inner simultaneously pyroelectricity electric field that produces is led effect by the electricity of lithium columbate crystal and is slowly neutralized.Doing so not only needs for a long time (dozens of minutes even a few hours), and has brought great inconvenience to operation---in the measuring process even fully can not be with the direct touch sensor of hand, otherwise can cause sensor output acute variation.
On the other hand, period polarized ferroelectric crystal is the crystalline material that a class recent two decades grows up gradually.Be characterized in adopting ion diffusion, proton exchange to add the electricdomain periodically counter-rotating spatially that quick heat treating process, electron beam scanning method, extra electric field polarization method or crystal growth are realized ferroelectric crystal.In the electricdomain of counter-rotating, the crystal physics character that interrelates with the odd-order tensor will change as the symbol of pyroelectric coefficient, electrooptical coefficient etc.The present invention just is being based on this emerging material.
In Chinese patent 98109631.X, 94190479.2 and 94190476.8, all related to and used electricdomain is made electric-field sensor at the ferroelectric crystal material of part counter-rotating embodiment.Their employed ferroelectric crystal materials are to have carried out the counter-rotating of electricdomain in part, M-Z structured waveguide zone, thereby its temperature stability does not reach best, further improvement as yet.
Summary of the invention
The objective of the invention is to propose a kind of photoelectric integration electric-field sensor based on period polarized ferroelectric crystal for overcoming the weak point of existing photoelectric integration electric-field sensor, have no metal electrode, the temperature stability height is suitable for the advantage that industry spot is measured.
The photoelectric integration electric-field sensor that the present invention proposes based on period polarized ferroelectric crystal, it is characterized in that, this sensor comprises the period polarized ferroelectric wafer with electrooptical effect, the optical waveguide along the Mach-Zehnder interferometer structure of the direction that is parallel to domain wall that forms in the one or more polarization cycles of this wafer surface, this optical waveguide comprise input section, deferent segment and the interlude of being made up of two parallel arms; Two arms of described optical waveguide are in respectively in the zone that polarised direction is opposite in described one or more polarization cycle.In described period polarized ferroelectric wafer, polarization cycle is covered with whole ferroelectric wafer, and all polarization cycle is arranged along the vertical direction of described optical waveguide, and the width of this each polarization cycle equates or be unequal.
Principle of work of the present invention: adding under the electric field action to be measured, two arms of sensor M-Z structure form push-pull configuration because the opposite in sign of electrooptical coefficient causes two arm phase places that opposite variation takes place, and realize electrooptical modulation.And when temperature changed, at waveguide region, two arms of sensor M-Z structure were because the symbol of pyroelectric coefficient, electrooptical coefficient is contrary, and " two negatives make a positive " causes two arm phase places that identical variation takes place, thereby cancelled each other; Outside waveguide region, because polarization cycle is covered with whole ferroelectric wafer, so the symbol of pyroelectric coefficient is periodic inversion everywhere also, the symbol of the electric charge that pyroelectric effect produces is periodic inversion everywhere correspondingly also, thereby the electric field overwhelming majority of these electric charges will cancel each other, and be unlikely to interferometry.So just, reached purpose of the present invention.
Compare with original photoelectric integration electric-field sensor, beneficial effect of the present invention is as follows:
1) has superior temperature stability, both made things convenient for laboratory measurement, be suitable for industry spot again and measure.
2) whole sensor does not comprise any metal parts, and electric field effects to be measured is further reduced.
3) inherited that original photoelectric integration electric-field sensor response speed is fast, bandwidth, can measure all advantages such as time domain waveform of highfield signal.
Description of drawings
Fig. 1 is existing photoelectric integration electric-field sensor structural representation.
Fig. 2 is the structural representation of embodiments of the invention.
Fig. 3 is the structural representation of an alternative embodiment of the invention.
Fig. 4 is for using the synoptic diagram of photoelectric integration electric-field measuring system of the present invention.
Embodiment
The photoelectric integration electric-field sensor based on period polarized ferroelectric crystal that the present invention proposes reaches embodiment in conjunction with the accompanying drawings and is described in detail as follows:
Structure such as Fig. 2 or shown in Figure 3 that the present invention proposes based on the photoelectric integration electric-field sensor of period polarized ferroelectric crystal, this sensor comprises period polarized ferroelectric wafer 1 with electrooptical effect (the short arrow that indicates zed among the figure has been indicated the direction of this arrow place electricdomain), the optical waveguide 2 of the Mach-Zehnder interferometer structure along the direction that is parallel to domain wall that forms in the one or more polarization cycles of this wafer surface (M-Z structure), this optical waveguide comprise input section, deferent segment and the interlude of being made up of two parallel arms; Two arms of described optical waveguide are in respectively in the zone that polarised direction is opposite in described one or more polarization cycle, promptly arm be in the electricdomain zone that polarised direction makes progress (as Z among the figure ↑ shown in), arm be in the downward electricdomain zone of polarised direction (as Z among the figure ↓ shown in), thereby the symbol of the pyroelectric coefficient of two arms, electrooptical coefficient is contrary.
The concrete size of the optical waveguide 2 of M-Z structure of the present invention is decided by to import factors such as monochromatic polarization light wavelength, manufacture craft and electric field intensity to be measured, and generally, the intensity of electric field to be measured is strong more, and the length of two arms of M-Z structured light waveguide is short more.For the input light of 1550nm wavelength, general optical waveguide width is several microns, and interlude two optical waveguide length parallel to each other are that tens millimeters, spacing are tens to more than 100 microns.
Period polarized ferroelectric wafer 1 with electrooptical effect of the present invention can be periodically poled lithium niobate wafer or period polarized lithium tantalate wafer, and its profile is generally yardstick at rectangular parallelepipeds several or tens millimeters.Its size is (as L among the figure
1, L
2Length) as long as satisfy the optical waveguide 2 can hold the M-Z structure.
In described period polarized ferroelectric wafer, polarization cycle is covered with whole ferroelectric wafer, and all polarization cycle is arranged along the vertical direction of described optical waveguide, and (be Λ in Fig. 2, be Λ in Fig. 3 to the width of this each polarization cycle
1, Λ
2And Λ
3) equal or unequal.And input, output and the interlude of the optical waveguide 2 of M-Z structure two optical waveguides parallel to each other do not overlap with the electricdomain border.Putting before this, in theory, the width of polarization cycle is more little, and the ratio of the electricdomain peak width that polarised direction is opposite in each polarization cycle is more near 1: 1, and then the temperature stability of sensor is high more.And in fact, be subjected to the restriction of production technology up till now, the width of polarization cycle is generally several microns to the hundreds of micron, and the optimal value of the ratio of the electricdomain peak width that polarised direction is opposite in each polarization cycle is relevant with concrete grammar and the technological parameter of realizing domain reversal.
The period polarized structure of wafer of the present invention adds any the obtaining in quick heat treating process, electron beam scanning method, extra electric field polarization method or the crystal growth for adopting ion diffusion, proton exchange.At present, the effect of described last two kinds of methods is best.
With reference to Fig. 2, the material of one embodiment of the present of invention and the dimensional parameters of structure are: period polarized ferroelectric wafer 1 adopts the periodically poled lithium niobate wafer, and its electricdomain periodic reversal structure obtains for adopting crystal growth, and profile is a rectangular parallelepiped, size: L
1Be 3mm, L
2Be 50mm, L
3Be 2mm, the width Λ of its each polarization cycle is identical, is 200 μ m, and total number of cycles n is 15, prolongs L
1Direction is covered with entire wafer, and the ratio of the electricdomain peak width that polarised direction is opposite in each polarization cycle is 1: 1.The monochromatic polarized light wavelength of the input of M-Z structured light waveguide 2 1550nm, the optical waveguide width is 6.5 μ m, input, output terminal are Y shape bifurcated.Interlude two optical waveguide length parallel to each other are 10mm, and spacing 100 μ m are in the electricdomain zone that polarised direction is opposite in the cycle that to be arranged on a width be Λ.
With reference to Fig. 3, the material of an alternative embodiment of the invention and the dimensional parameters of structure are: period polarized ferroelectric wafer 1 adopts period polarized lithium tantalate wafer, and its electricdomain periodic reversal structure obtains for adopting the extra electric field polarization method, and profile is a rectangular parallelepiped, size: L
1Be 5mm, L
2Be 40mm, L
3Be 0.5mm, the width Λ of its polarization cycle
1Be 50 μ m, Λ
2Be 70 μ m, Λ
3Be 20 μ m, Λ
4Be 10 μ m, the corresponding total n of difference
1Be 2, n
2Be 1, n
3Be 120, n
4It is 243.All polarization cycles prolong L
1Direction is covered with entire wafer.The ratio of the electricdomain peak width that polarised direction is opposite in each polarization cycle is 1: 1.The monochromatic polarized light wavelength of the input of M-Z structured light waveguide 2 1550nm, the optical waveguide width is 6.5 μ m, and input end is a Y shape bifurcated, and output terminal is a three-dB coupler.Interlude two optical waveguide length parallel to each other are 20mm, spacing 75 μ m, and being arranged on adjacent, width is Λ
1And Λ
2Two cycle middle distances farthest and in the opposite electricdomain zone of polarised direction.
The present invention promptly can be used for various application scenarios after encapsulating with insulating material, is specially adapted to the electric field measurement under high voltage or the electromagnetic pulse environment.
The present invention can be applicable in the electric field measurement system, and this system architecture and principle of work are as shown in Figure 4; The linearly polarized laser that lasing light emitter 3 produces is imported with the M-Z structured light waveguide in the sensor 5 of insulating material encapsulation by polarization maintaining optical fibre 4.Will modulate the Output optical power of sensor along being parallel to the electric field to be measured 0 that the electricdomain polarised direction applies.This output light is converted to voltage signal by single-mode fiber 6 input photoelectric commutators 7 with optical power signals, enters electrical signal detection device 9 via radio-frequency cable 8.Because the voltage signal of photoelectric commutator 7 outputs is directly proportional with the optical power signals of input, the latter is subjected to adding the modulation of electric field 0 to be measured again, so can obtain adding electric field 0 to be measured by detectable voltage signals.
Electric-field sensor of the present invention can be used for the electric field (especially highfield) in high-voltage engineering field to be measured, and comprises that power frequency electric field is measured, power system operation impacts electric field measurement, lightning impulse electric field measurement and the measurement of fast transient impulse electric field etc.Not only can measure the amplitude of electric field to be measured, and can measure the time domain waveform of electric field to be measured, can be used for the mechanism research field of research field, long air gap discharge process of power system device operation conditions and other need measure the application of electric field.
Claims (2)
1, a kind of photoelectric integration electric-field sensor based on period polarized ferroelectric crystal, it is characterized in that, this sensor comprises the period polarized ferroelectric wafer with electrooptical effect, the optical waveguide along the Mach-Zehnder interferometer structure of the direction that is parallel to domain wall that forms in the one or more polarization cycles of this wafer surface, this optical waveguide comprise input section, deferent segment and the interlude of being made up of two parallel arms; Two arms of described optical waveguide are in respectively in the zone that polarised direction is opposite in described one or more polarization cycle; In described period polarized ferroelectric wafer, polarization cycle is covered with whole ferroelectric wafer, and all polarization cycle is arranged along the vertical direction of described optical waveguide, and the width of this each polarization cycle equates or be unequal.
2, electric-field sensor according to claim 1, it is characterized in that the period polarized structure of described wafer adds any the obtaining in quick heat treating process, electron beam scanning method, extra electric field polarization method or the crystal growth for adopting ion diffusion, proton exchange.
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Cited By (5)
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| CN102967734A (en) * | 2012-11-16 | 2013-03-13 | 清华大学 | Preparation method of barium metaborate crystal electric field sensor based on angular optical biasing |
| CN102990160A (en) * | 2012-12-05 | 2013-03-27 | 浙江兰通空调设备有限公司 | Device for removing burrs on end face of round pipe |
| CN106066421A (en) * | 2016-08-12 | 2016-11-02 | 国家电网公司 | A kind of lightning arrester discharge current monitoring system and method |
| CN108120883A (en) * | 2017-11-22 | 2018-06-05 | 昆明理工大学 | A kind of integrated light guide three-dimensional electric field sensor |
| CN110702743A (en) * | 2019-10-16 | 2020-01-17 | 南京大学 | Nano electromechanical hydrogen sensor and preparation method thereof |
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2009
- 2009-02-25 CN CNA2009100785190A patent/CN101493481A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102967734A (en) * | 2012-11-16 | 2013-03-13 | 清华大学 | Preparation method of barium metaborate crystal electric field sensor based on angular optical biasing |
| CN102967734B (en) * | 2012-11-16 | 2014-08-20 | 清华大学 | Preparation method of barium metaborate crystal electric field sensor based on angular optical biasing |
| CN102990160A (en) * | 2012-12-05 | 2013-03-27 | 浙江兰通空调设备有限公司 | Device for removing burrs on end face of round pipe |
| CN106066421A (en) * | 2016-08-12 | 2016-11-02 | 国家电网公司 | A kind of lightning arrester discharge current monitoring system and method |
| CN108120883A (en) * | 2017-11-22 | 2018-06-05 | 昆明理工大学 | A kind of integrated light guide three-dimensional electric field sensor |
| CN110702743A (en) * | 2019-10-16 | 2020-01-17 | 南京大学 | Nano electromechanical hydrogen sensor and preparation method thereof |
| CN110702743B (en) * | 2019-10-16 | 2021-09-28 | 南京大学 | Nano electromechanical hydrogen sensor and preparation method thereof |
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