CN101490795B - HID lamp - Google Patents

HID lamp Download PDF

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Publication number
CN101490795B
CN101490795B CN2007800005215A CN200780000521A CN101490795B CN 101490795 B CN101490795 B CN 101490795B CN 2007800005215 A CN2007800005215 A CN 2007800005215A CN 200780000521 A CN200780000521 A CN 200780000521A CN 101490795 B CN101490795 B CN 101490795B
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CN
China
Prior art keywords
electrode
earth metal
rare earth
sealing
lamp
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Expired - Fee Related
Application number
CN2007800005215A
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Chinese (zh)
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CN101490795A (en
Inventor
加藤育宏
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SHANGHAI JINGCI CDM LIGHTING C
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SHANGHAI JINGCI CDM LIGHTING C
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Publication of CN101490795A publication Critical patent/CN101490795A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/04—Electrodes; Screens; Shields
    • H01J61/06—Main electrodes
    • H01J61/073—Main electrodes for high-pressure discharge lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/36—Seals between parts of vessels; Seals for leading-in conductors; Leading-in conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/36—Seals between parts of vessels; Seals for leading-in conductors; Leading-in conductors
    • H01J61/366—Seals for leading-in conductors

Abstract

The invention aims at improving considerably the service life of a lamp by suppressing a chemical reaction between a rare earth metal and an electrode sealed in a discharge vessel. An HID lamp (3) comprises a luminescent part (3a) in the center part and a sealing site (3b) in both end parts. A rod, or one-side sealed pipe (boot) external electrodes (7, 8) formed of Nb are held in a hermetically sealed state in the sealing site (3b) through a sealing material (9) formed of frit glass. Internal electrodes (10, 11) formed of W (tungsten) or Mo (molybdenum) are welded to these external electrodes(7, 8). The surface of the external electrodes (7, 8) formed of Nb rod or the one-side sealed pipe (boot) is formed of a thin film (14) of an oxide of a rare earth metal (e.g. Dy2O3) identical to therare earth metal halide sealed in the luminescent part (3a).

Description

High-intensity gas discharge lamp
Technical field
The present invention relates to the high-intensity gas discharge lamp (HID lamp) of light fixture etc. as high brightness, high efficiency, high-color rendering.
Background technology
Express as patent documentation 1,, generally adopt, and give the structure of electrode power supply via molybdenum foil from the outside at discharge vessel two ends fixing electrode as the structure of discharge lamp.
As the material of discharge vessel, generally adopt silica, aluminium oxide ceramics etc., make electrode with combination and the welding of W and Mo or Nb etc.In addition, in discharge vessel, except enclosing argon gas, mercury, sodium, also enclose the various halide of rare earth metal such as Dy in order to bring into play high-color rendering.
In this HID lamp, an energized begins glow discharge between electrode, and the electrode self-heating can at first make mercury begin gasification.Mercury is ion because of the collision between interelectrode hot electron and the mercury vapour temporarily is energized, and reverts to mercury atom again after sending light.In returning to the process of mercury, send the intrinsic light of the mercury light of all wavelengths of infrared light (from the ultraviolet light to the visible light until).This luminescence phenomenon is called arc discharge.Follow this phenomenon, the actual temperature in the discharge vessel slowly rises, and sodium and metal halide be gasification successively just.That is, the vapour pressure of gas is exactly certain dividing potential drop that they are held separately.Then since with thermionic collision, these metal halide molecules or metal species are energized and become ion, return to previous status once more and be in the process of metal halide molecule or metal species to send relevant intrinsic light (mulecular luminescence and atom are luminous).Above-mentioned process is generically and collectively referred to as halogen cycle.
In the HID lamp, have following unfavorable condition: the actual temperature of electrode is by input current or input voltage control, but the tungsten generation chemical reaction of impurity of unavoidably being sneaked in manufacture process and electrode tip can cause the fusing point of electrode self to reduce (alloy is lower than the fusing point of pure tungsten certainly).In a single day fusing point reduces, and alloy just begins gasification from the end of electrode, and evaporation finally can cause the melanism of fluorescent tube on the inwall of the relatively low discharge vessel of temperature (also being discharge tube).Consequently, outwards the light of emission is blocked.This is that luminous flux is kept one of reason that coefficient reduces.
Disclosing the structure with the metallic object coated electrode in patent documentation 2, particularly is exactly to twine tungsten filament by helical form around the electrode in sealing to prevent the too scheme of high temperature of electrode.
In addition, when lighting a lamp, because the discharge vessel inwall of HID lamp is near 1000 ℃, argon gas leaks from sealing easily.Therefore, patent documentation 3 has proposed following scheme: the two ends of using the occlusor made by gradual change function material to seal the discharge vessel of aluminium oxide ceramics system, conductive portion at this occlusor is inserted thermal coefficient of expansion and aluminium oxide ceramics niobium system outer electrode about equally, by conductive portion and the conducting of tungsten system internal electrode.
Patent documentation 1: the spy opens flat 6-52830 communique patent documentation 2: the spy opens 2000-268773 communique patent documentation 3: the spy opens the 2002-343304 communique
Summary of the invention
Can there be the gap in the discharge vessel of HID lamp at sealing between the electrode of its inwall and insertion unavoidably.Can be detained in this gap metal halide is arranged.Its reason is that liquid metal halide has surface tension, that is to say the viscosity height of metal halide.And the electrode temperature that the temporary transient metal halide of stagnating can cause along with lighting a lamp rises and no longer participates in the halogen cycle of gas, and causes chemical reaction between meeting and electrode.
Particularly, it is that displacement reaction takes place Nb that following phenomenon: Dy and partial electrode material can take place, and Nb is inner mobile to discharge vessel, and Dy then is stuck in the Nb (electrode material).Then, the Nb that has gasified can be attached to tungsten electrode end (the coldest part) when turning off the light.And, when lighting a lamp next time, because the electrode heating can make W and Nb form alloy.The fusing point of this alloy ratio pure tungsten is low, the phenomenon that therefore can cause the end of tungsten electrode slowly to be consumed.The alloy of fusion is understood evaporation at the discharge vessel inwall, outwards luminous being blocked.Therefore, light converts heat on inwall, and the discharge vessel temperature inside is not that trend is stable expectantly as institute, but can rise gradually.Along with this a succession of chemical reaction increases gradually, finally cause the damage of lamp.
Therefore,, generally cover the Nb position fully, not allow Nb and metal halide react with frit for fear of the reason that causes this phenomenon.Yet, owing to metal halide with by Dy 2O 3-SiO 2-Al 2O 3The frit of forming directly contacts, SiO especially in the frit 2Reduced by metal halide easily.That is to say that metal halide middle rare earth metalloid is from SiO 2In capture oxygen and become stable oxide.On the other hand, the SiO in the frit 2Become the halide of Si or SiO, and move to discharge vessel inside.Si that has moved or the halide of SiO are heated in discharge vessel and separate (separating with halogen), generate Si or SiO.Therefore, the same with the Nb of front, it can be attached to electrode tip (the coldest part) when turning off the light, when lighting a lamp next time with tungsten formation silicon compound.These silicon compounds are also low than pure tungsten fusing point, can cause the consume of tungsten electrode.
The present invention solves above-mentioned problem by the following method: the displacement for the Nb and the rare earth metal that suppress to become basic triggering factors is provided with by stable Dy on electrode 2O 3The film that forms is simultaneously because SiO 2Displacement rely on the temperature that contacts of frit and metal halide, therefore as far as possible the temperature at this position is reduced, even it is away from the thermal source center of discharge.
Just, the present invention has following structure: the two ends of the discharge vessel of making at pottery are provided with sealing, in the HID lamp of sealing portion with frit fixing electrode, the part that contacts with frit in the above-mentioned electrode is made of Nb or its alloy, be pre-formed film on the surface of this Nb or its alloy or the surface in the welding position of the electrode that Nb or its alloy and W or Mo make before sealing, described film is made of the compound of rare earth metal and halogen being used in the discharge vessel of packing into the oxide of rare earth metal forms.
In order to prevent to cause film and interelectrode peeling off because of the thermal cycle of HID lamp, rule of thumb, the thickness of film is preferably below the 30 μ m.In addition, as above-mentioned rare earth metal, dysprosium (Dy), scandium (Sc), neodymium (Nd), europium (Eu), holmium (Ho), thulium (Tm) and ytterbium elements such as (Yb) are for example arranged.
Can do following consideration to the rare earth metal oxide, promptly the rare earth metal oxide has the concentration gradient that its concentration diminishes continuously towards the center of Nb rod.The formation method of the continuous gradation film of rare earth metal oxide can be considered methods such as spraying process, CVD method, gas sedimentation.
In HID lamp of the present invention, electrode at the sealing fixing is made of Nb (Nb alloy), cover the surface of the welding position of this Nb (Nb alloy) surface or Nb (Nb alloy) and W or Mo electrode with the film of rare earth metal oxide, thereby can prevent that Nb and W electrode or Mo electrode from forming low-melting alloy, can increase substantially the life-span.
In addition, traditional structure is that the part that Nb constitutes is all covered by frit, but the present invention forms the film of rare earth metal oxide on the surface of the welding position of Nb electrode surface or Nb electrode and W or Mo electrode, and therefore the rare earth metal of being enclosed can not react with it.Its result there is no need with frit the Nb position all to be covered, and compares with traditional structure, is retreated to low temperature side in the position of the frit that is exposed to the discharge vessel inner surface.So, the Si0 that can suppress to comprise unavoidably in the frit 2Reduced by rare earth metal and generate Si or SiO, can expect life-saving significantly, reach and pure Nb equivalence.
Description of drawings
Fig. 1 is the overall diagram of HID lamp of the present invention; Fig. 2 is the profile of HID lamp of the present invention; Fig. 3 is the exploded view of electrode; Fig. 4 is the amplification profile of sealing; Another embodiment of (a) expression electrode among Fig. 5, (b) be (a) want portion's enlarged drawing; (a) represents electrode situation before welding of another embodiment among Fig. 6; (b) represent situation after the welding of this electrode.
Embodiment
Below, based on description of drawings explanation embodiments of the invention.Here, Fig. 1 is the overall diagram of ligthing paraphernalia of HID lamp of the present invention of having packed into, and Fig. 2 is the profile of HID lamp of the present invention; Fig. 3 is the exploded view of electrode; Fig. 4 is the amplification profile of sealing.
Ligthing paraphernalia shown in Figure 1 has does not need the triple tube of front glass structure, configuration inside tube 2 in outboard tube 1, the HID lamp 3 of the present invention of packing in this inside tube 2 will be received on the outer electrode 7,8 of HID lamp 3 separately from the electric conductor 5,6 that lamp holder 4 stretches out.In the present embodiment, outer electrode 7,8 is made of Nb (niobium).Have, 7a, 8a are the stopper sections that outer electrode 7,8 part distortion backs are formed, and as shown in Figure 4, by this stopper section 7a, 8a are assembled into conflict discharge vessel end, can correctly set electrode spacing important in the HID lamp again.
In general, discharge lamp 3 usefulness silica or aluminium oxide ceramics are as material.As illuminating part 3a, two ends are as sealing 3b with the central portion of this HID lamp 3.In illuminating part 3a the inside except that argon gas, mercury, sodium, the multiple halide (mainly being iodide) of the rare earth metal (Dy) of also packing into etc.
Sealing 3b comes the outer electrode 7,8 of the above-mentioned Nb of air-tightness fixing (niobium) system by the encapsulant of being made up of frit 9, welds the internal electrode 10,11 of W (tungsten) or Mo (molybdenum) system on these outer electrodes 7,8.In addition, twine the coil 12 of discharge usefulness, twine the coil 13 of heat transmission at pars intermedia in the end of internal electrode 10,11.
The above-mentioned encapsulant 9 general Dy that use with fusing point more than 1500 ℃ 2O 3-SiO 2-Al 2O 3Be frit, as shown in Figure 3, sealing material 9 the heating before in the form of a ring.
In addition, form on the surface of Nb system outer electrode 7,8 by rare earth metal oxide (Dy for example 2O 3) film 14 formed, this rare earth metal with enclose illuminating part 3a in metal halide in metal identical.Perhaps, also can replace this rare earth metal oxide 14 and form the film of rare earth metal oxide (100% oxide → graded bedding → 100% niobium) with the concentric circles gradual change.
Form above-mentioned film following three methods are arranged.(method 1) buries the Nb electrode underground in purity is rare earth metal oxide more than 99.9%, and when lighting a lamp more than the Nb electrode temperature (500-800 ℃) keep certain hour, the Nb electrode surface is directly contacted, the film that strengthens gradually to the top layer internally with the concentration that forms the rare earth metal oxide with the rare earth metal oxide.Minimum for the possibility of peeling off is dropped to, when then the diameter of Nb electrode was 0.7mm φ, the thickness of this film preferably was not more than 30 μ m.
(method 2) is in purity is argon gas atmosphere more than 99.99%, following and the dew point of atmospheric pressure is in-80 ℃ to-100 ℃ scopes, the halide and the Nb electrode of rare earth metal are sealed in the silica container, the Nb electrode are followed by carry out the rare earth halide metalloid that high-frequency heating gasifies from the outside react.Just make the displacement of Nb and rare earth metal forcibly.Then, by making reacted Nb electrode heated oxide in atmosphere, on the Nb electrode surface, form stable rare earth metal oxidation film.
(method 3) is that carrier gas is jetted with the argon gas in atmosphere, at a high speed, high temperature ground sprays to the rare earth metal oxide on the surface of Nb electrode.Then, in purity is argon gas atmosphere more than 99.99%, below atmospheric pressure and dew point become in-100 ℃ of scopes for-80 ℃, it is sealed in the silica container, remove impurity by carry out high-frequency heating from the outside.
Among the present invention, Nb outer electrode 7,8 is not that whole sealed materials 9 cover, but the part of outer electrode 7,8 places in the discharge vessel to expose state.In conventional art, in this part of exposing, displacement reaction takes place in the rare earth metal of inclosure and Nb, and Nb moves to the end of tungsten electrode and generates low-melting alloy.But in the present invention, in advance with the oxide-film covering of rare earth metals such as Dy, can not produce above-mentioned reaction on Nb system outer electrode 7,8 surfaces.In addition,, can make the inner surface of encapsulant 9 retreat into low-temperature space, eliminate because of the unfavorable factor of reduction reaction at inner Si of formation of discharge tube or SiO because needn't cover whole outer electrode 7,8 with encapsulant 9.
Fig. 5 (a) is the figure of another embodiment of electrode, (b) be (a) want portion's enlarged drawing, in this example internal electrode 10,11 is pressed in the protective jacket 15 of Nb system, the part of this protective jacket 15 is retained on sealing.Among this embodiment, also on protective jacket 15 surfaces externally and internallies, form the film 14 of rare earth metal oxide or the graded bedding of rare earth metal oxide.
Fig. 6 (a) is the preceding figure of electrode welding of another embodiment, (b) is the figure after this electrode welding, and Nb system outer electrode 16 and W make between the internal electrode 17 with 18 connections of Mo system target.It is desirable adopting Mo system target 18, because its easy and Nb welding, handling ease and cost are also lower, also seldom react with metal halide.
And in this another embodiment, the film 14 of rare earth metal oxide covers the surface of the weld part 19 between Nb system outer electrode 16 and the Mo system target 18.

Claims (2)

1. high-intensity gas discharge lamp, the two ends of the discharge vessel of making at pottery are provided with sealing, come the fixing electrode at described sealing by frit, it is characterized in that:
The part that contacts with frit in the described electrode is made by Nb or its alloy, be pre-formed film before the sealing on the surface of this Nb or its alloy or the surface in the welding position of the electrode that Nb or its alloy and W or Mo make, described film is made of the compound of rare earth metal and halogen being used in the discharge vessel of packing into the oxide of rare earth metal forms.
2. high-intensity gas discharge lamp as claimed in claim 1 is characterized in that: described rare earth metal is Dy, Sc, Nd, Eu, Ho, Tm or Yb.
CN2007800005215A 2007-06-18 2007-08-21 HID lamp Expired - Fee Related CN101490795B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007159867A JP3995053B1 (en) 2007-06-18 2007-06-18 HID lamp
JP159867/2007 2007-06-18
PCT/JP2007/066209 WO2008155863A1 (en) 2007-06-18 2007-08-21 Hid lamp

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Publication Number Publication Date
CN101490795A CN101490795A (en) 2009-07-22
CN101490795B true CN101490795B (en) 2010-09-29

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CN (1) CN101490795B (en)
WO (1) WO2008155863A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4312251B1 (en) * 2008-07-03 2009-08-12 育宏 加藤 HID lamp
JP4338762B1 (en) * 2008-07-03 2009-10-07 育宏 加藤 HID lamp
JP2010015911A (en) * 2008-07-07 2010-01-21 Shanghai Jingci Cmd Lighting Co Ltd Hid lamp

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001243918A (en) * 2000-02-29 2001-09-07 Toshiba Lighting & Technology Corp Ceramics discharge lamp
JP2007115651A (en) * 2005-06-14 2007-05-10 Toshiba Lighting & Technology Corp High-pressure discharge lamp, high-pressure discharge lamp lighting device and illuminating apparatus

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2000-268773A 2000.09.29
JP特开2001-243918A 2001.09.07
JP特开2007-115651A 2007.05.10

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JP2008311170A (en) 2008-12-25
CN101490795A (en) 2009-07-22
JP3995053B1 (en) 2007-10-24
WO2008155863A1 (en) 2008-12-24

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Granted publication date: 20100929

Termination date: 20130821