CN101488640A - 一种半导体激光器微通道热沉 - Google Patents
一种半导体激光器微通道热沉 Download PDFInfo
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- CN101488640A CN101488640A CNA2009100778337A CN200910077833A CN101488640A CN 101488640 A CN101488640 A CN 101488640A CN A2009100778337 A CNA2009100778337 A CN A2009100778337A CN 200910077833 A CN200910077833 A CN 200910077833A CN 101488640 A CN101488640 A CN 101488640A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 241001672694 Citrus reticulata Species 0.000 claims description 17
- 230000003134 recirculating effect Effects 0.000 claims description 12
- 239000000498 cooling water Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000003491 array Methods 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
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- 238000010276 construction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006263 metalation reaction Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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Application Number | Priority Date | Filing Date | Title |
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CN2009100778337A CN101488640B (zh) | 2009-01-23 | 2009-01-23 | 一种半导体激光器微通道热沉 |
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CN2009100778337A CN101488640B (zh) | 2009-01-23 | 2009-01-23 | 一种半导体激光器微通道热沉 |
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CN101488640A true CN101488640A (zh) | 2009-07-22 |
CN101488640B CN101488640B (zh) | 2010-09-15 |
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CN2009100778337A Expired - Fee Related CN101488640B (zh) | 2009-01-23 | 2009-01-23 | 一种半导体激光器微通道热沉 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101882753A (zh) * | 2010-06-23 | 2010-11-10 | 中国科学院上海光学精密机械研究所 | 大功率激光二极管热沉 |
CN104051952A (zh) * | 2014-07-04 | 2014-09-17 | 成都三鼎日新激光科技有限公司 | 一种内微通道冷却热沉 |
CN105305225A (zh) * | 2015-11-04 | 2016-02-03 | 北京工业大学 | 一种半导体激光器冷却热沉装置 |
CN114374144A (zh) * | 2022-01-18 | 2022-04-19 | 北京工业大学 | 一种微通道芯片的液氮循环散热系统及制备方法 |
-
2009
- 2009-01-23 CN CN2009100778337A patent/CN101488640B/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101882753A (zh) * | 2010-06-23 | 2010-11-10 | 中国科学院上海光学精密机械研究所 | 大功率激光二极管热沉 |
CN101882753B (zh) * | 2010-06-23 | 2012-06-13 | 中国科学院上海光学精密机械研究所 | 大功率激光二极管热沉 |
CN104051952A (zh) * | 2014-07-04 | 2014-09-17 | 成都三鼎日新激光科技有限公司 | 一种内微通道冷却热沉 |
CN105305225A (zh) * | 2015-11-04 | 2016-02-03 | 北京工业大学 | 一种半导体激光器冷却热沉装置 |
CN105305225B (zh) * | 2015-11-04 | 2018-10-30 | 北京工业大学 | 一种半导体激光器冷却热沉装置 |
CN114374144A (zh) * | 2022-01-18 | 2022-04-19 | 北京工业大学 | 一种微通道芯片的液氮循环散热系统及制备方法 |
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CN101488640B (zh) | 2010-09-15 |
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Effective date of registration: 20171206 Address after: 041600 Ganting Shanxi city in Linfen province Hongdong County town of Yan Village Patentee after: SHANXI FEIHONG MICRO-NANO PHOTOELECTRONICS SCIENCE & TECHNOLOGY CO.,LTD. Address before: 101102, Beijing, Zhongguancun science and Technology Park, Tongzhou Park, Jinqiao technology industry base, 15 South four street, 35A, B, Tongzhou District Patentee before: BEIJING LUHE FEIHONG LASER TECHNOLOGY Co.,Ltd. |
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