CN101486486B - 强磁场下ZnO及其稀磁半导体材料的制备方法与装置 - Google Patents
强磁场下ZnO及其稀磁半导体材料的制备方法与装置 Download PDFInfo
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CN102491742A (zh) * | 2011-11-17 | 2012-06-13 | 上海大学 | 锰铜共掺杂ZnO稀磁半导体材料的制备方法与装置 |
CN102491743A (zh) * | 2011-11-17 | 2012-06-13 | 上海大学 | 铬铜共掺杂ZnO稀磁半导体材料的制备方法与装置 |
CN102502782A (zh) * | 2011-11-18 | 2012-06-20 | 上海大学 | 铬锰共掺杂ZnO稀磁半导体材料的制备方法与装置 |
CN102693844B (zh) * | 2012-05-30 | 2014-12-03 | 辽宁工业大学 | 采用脉冲电磁场制备Al掺杂ZnO纳米片阵列的方法 |
CN104465111B (zh) * | 2014-11-29 | 2017-04-19 | 辽宁工业大学 | 一种染料敏化太阳能电池光阳极的制备方法 |
CN111809158A (zh) * | 2020-07-22 | 2020-10-23 | 延安大学 | 一种过渡金属掺杂ZnO纳米线阵列、制备方法及其应用 |
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CN1896289A (zh) * | 2006-06-27 | 2007-01-17 | 上海大学 | 均恒强磁场下制备镁基储氢材料的方法及装置 |
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