CN101483339A - Electrostatic protection method and circuit having detection control circuit - Google Patents
Electrostatic protection method and circuit having detection control circuit Download PDFInfo
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- CN101483339A CN101483339A CNA2009100000617A CN200910000061A CN101483339A CN 101483339 A CN101483339 A CN 101483339A CN A2009100000617 A CNA2009100000617 A CN A2009100000617A CN 200910000061 A CN200910000061 A CN 200910000061A CN 101483339 A CN101483339 A CN 101483339A
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Abstract
The present invention discloses an electrostatic protection method with detection control circuit and circuit which belongs to electrostatic protection field, and the method comprises the following steps: detect input voltage on input/output terminal of a chip internal circuit through a detection circuit, when input voltage smaller than trigger voltage set by the detection circuit, it is judged to be working voltage, and working current corresponding to the working voltage flows into the chip internal circuit through input/out terminal of the chip internal circuit directly, and the trigger voltage is smaller than minimum breakdown voltage of the chip internal circuit; when input voltage on input/output terminal of a chip internal circuit is detected bigger than or equal to the trigger voltage, it is judged to be electrostatic discharge voltage, and the detection circuit controls electrostatic discharge current corresponding to the electrostatic discharge voltage bleed through a bleeder circuit, thereby the input voltage is clamped in safe voltage range and plays the role of internal circuit protection. The present invention realizes clamp or normal work through detecting input voltage and control bleed.
Description
Technical field
The invention belongs to the electrostatic protection field of integrated circuit, relate in particular to a kind of with the electrostatic protection method that detects control circuit and realize the circuit of this method.
Background technology
In chip application, static discharge can cause most of chips to damage, and static is ubiquitous, static can be in production, the assembling of chip, and be accumulated on human body and the machine in the test process, when chip is in contact with one another with human body that has static or object, just formed current circuit, cause the breaking-up of chip internal.Static on the human body can form discharge loop through the pin of chip, this discharge process can produce several amperes the electric current that sparks in the time that is short to hundreds of nanosecond (ns), for general consumption chip, the spike of its electric current that sparks can reach 1.3 amperes to tens amperes, and this discharging current will make the assembly in the IC burn.
In order to solve the problem that causes chip to damage owing to static discharge; more protection scheme is arranged at present; for example; between the I/O end of chip internal circuit and pad, increase diode component, MOS (NMOS/PMOS) device, thick oxide layer MOS (Field-oxide) assembly, the parasitic triode device that is communicated with ground, and SCR protects structure.For above several guard methods, all need to increase absolute device area and just can reach electrostatic protection effect preferably.
Figure 1 shows that simple protective circuit of diode 10, the normal working voltage of diode 11 about 0.7～1.2V, but the working inverse voltage of diode 11 be about-12V～-15V about.Therefore, when static discharge current 12 is flowed through diode 11, the heat that the heat that diode 11 is produced under the reverse voltage situation is produced under the forward voltage situation much larger than diode, the i.e. electrostatic potential that can bear under the forward voltage of the electrostatic potential that under reverse voltage, can bear of diode.
As shown in Figure 2, for MOS device or thick oxide layer MOS protective circuit 20, when electrostatic potential rises to the puncture voltage of metal-oxide-semiconductor 21, metal-oxide-semiconductor 21 will carry out avalanche breakdown.The effect of MOS device or thick oxide layer MOS protective circuit depend primarily on metal-oxide-semiconductor 21 the second time avalanche breakdown point electric current, avalanche breakdown for the second time promptly arrives the lowest high-current value that PN junction can bear.When static discharge current 22 greater than metal-oxide-semiconductor 21 the second time avalanche breakdown point electric current the time, serious leaky will take place in metal-oxide-semiconductor 21, causes permanent damage.For the electric current of the avalanche breakdown point that increases metal-oxide-semiconductor 21, need to increase the area of metal-oxide-semiconductor 21, if maldistribution can cause electric leakage equally, cause permanent damage.
Above-mentioned two kinds of ESD protection circuits, static discharge all are operated in it and discharge electrostatic induced current in the avalanche region for the first time, and at this moment, still there is damage in electrostatic discharge protector.After entering the secondary avalanche region, electrostatic discharge protector will cause permanent damage because add the voltage of excessive (static) or electric current when electrostatic discharge protector.
As shown in Figure 3, for the SCR protective circuit 30 of the present high utmost point, because SCR assembly 31 all has only about 1V when the work of forward voltage and reverse voltage, so SCR assembly 31 can bear high electrostatic potential under littler layout area.But the problem that SCR protective circuit 30 still exists is: the trigger voltage of SCR protective circuit 30 is difficult to control, also needs to prevent the latch-up (latchup) of circuit devcie simultaneously.Though; by increasing guard ring or adopting bigger domain can promote the trigger voltage of SCR protective circuit 30 at interval; but the instantaneous large-current when the static discharge generation is discharged in the conducting in real time of trigger voltage height, this will cause protected device to be destroyed by static discharge earlier.
Summary of the invention
The objective of the invention is problem, provide a kind of and come the method and the circuit of the conducting of controlled discharge electrostatic devices, with the static of effectively releasing by detecting input voltage at existing electrostatic discharge protective circuit existence.
For achieving the above object, the present invention adopts following technical scheme: a kind of with the electrostatic protection method that detects control circuit, the implementation procedure of this method is as follows:
By the input voltage of a testing circuit detection effect on the I/O end of chip internal circuit, when trigger voltage that input voltage is set less than testing circuit, be judged as operating voltage, then directly flow into the chip internal circuit by the I/O end of chip internal circuit with operating voltage corresponding work electric current, described trigger voltage is less than or equal to the minimum disruptive voltage of chip internal circuit;
When the input voltage on detecting the I/O end that acts on the chip internal circuit is greater than or equal to trigger voltage, be judged as static discharge voltage, then testing circuit control is released by a leadage circuit with the corresponding static discharge current of static discharge voltage, but not flows into the chip internal circuit.
Preferably, described testing circuit comprises inclined to one side resistance on positive-negative-positive triode, the Zener diode and the 3rd; Pass between the voltage stabilizing value Vzd of the conducting voltage Veb of described trigger voltage Ven and positive-negative-positive triode and Zener diode is: Ven=Veb+n * Vzd, wherein, n is a natural number, the quantity of expression Zener diode is regulated trigger voltage Ven by quantity and the voltage stabilizing value of selecting Zener diode;
When described input voltage during less than trigger voltage Ven, the positive-negative-positive triode is in by state, then connect with the collector electrode of positive-negative-positive triode the 3rd on partially the resistance no current pass through, the voltage that causes the positive-negative-positive transistor collector is low level;
At this moment, the power controlling switch that a control end is connected with the positive-negative-positive transistor collector is in by state, then connect with described power controlling switch second on partially the resistance no current pass through, causing on second partially, the voltage at resistance two ends is low level;
At this moment, on the leadage circuit, control end inserts on second partially that the power switch of releasing of resistance both end voltage is in by state, judge that then described input voltage is an operating voltage, and with operating voltage corresponding work electric current can only be directly I/O end by the chip internal circuit flow into the chip internal circuit;
When described input voltage was greater than or equal to trigger voltage Ven, the positive-negative-positive triode was in conducting state, on the 3rd partially resistance have electric current to pass through, make the voltage of positive-negative-positive transistor collector reach the conducting voltage of power controlling switch; This moment the power controlling switch conduction, on second partially resistance have electric current to pass through, cause on second the voltage at resistance two ends partially to reach the conducting voltage of the power switch of releasing; At this moment, the power switch conducting of releasing, leadage circuit is a path, judges that then described input voltage is a static discharge voltage, makes static discharge current release fast by leadage circuit.
A kind of with the electrostatic discharge protective circuit that detects control circuit, comprise testing circuit, control circuit and leadage circuit; Wherein,
Testing circuit is connected between the I/O end and ground of described chip internal circuit, comprises Enable Pin and control end; The Enable Pin of testing circuit is electrically connected with the I/O end of chip internal circuit, with the input voltage of detection effect on the I/O end of chip internal circuit;
Control circuit is connected between the I/O end and ground of described chip internal circuit, described control circuit comprise the power controlling switch and connect with the power controlling switch second on resistance partially; The control end of power controlling switch is electrically connected with the control end of testing circuit, with control by testing circuit its conducting with by;
Leadage circuit is connected between the I/O end and ground of described chip internal circuit, described leadage circuit comprises the power switch of releasing, the control end of power switch of releasing inserts on second the voltage at resistance two ends partially, with the conducting of the power switch of releasing by the State Control of power controlling switch with by, and then the Control work electric current directly the I/O end by the chip internal circuit flow into the chip internal circuit, and static discharge current is released by described leadage circuit.
Preferably, described power controlling switch is the NMOS pipe, the grid of NMOS pipe is electrically connected with the control end of testing circuit as the control end of power controlling switch, the drain electrode of NMOS pipe is electrically connected with the I/O end of chip internal circuit, is connected in series on described second resistance partially between the source electrode of NMOS pipe and the ground.
Preferably, the described power switch of releasing is a NPN type triode, the collector electrode of NPN type triode is electrically connected with the I/O end of chip internal circuit, the grounded emitter of NPN type triode, the base stage of NPN type triode insert the voltage at inclined to one side resistance two ends on described second as the control end of the power switch of releasing.
Preferably, described testing circuit comprises inclined to one side resistance on positive-negative-positive triode, the Zener diode and the 3rd; Wherein, the emitting stage of positive-negative-positive triode is the Enable Pin of described testing circuit, be connected in series on the 3rd resistance partially between the collector electrode of positive-negative-positive triode and the ground, the collector electrode of positive-negative-positive triode is as the control end of described testing circuit, is connected in series Zener diode between the base stage of positive-negative-positive triode and the ground.
Preferably, be connected in series Zener diode and the 4th current-limiting resistance between the described testing circuit, the base stage of its positive-negative-positive triode and ground.
Preferably, flow into testing circuit, control circuit and leadage circuit, one first current-limiting resistance of perhaps flowing through earlier before the operating current inflow chip internal circuit at static discharge current.
Band of the present invention detects the electrostatic protection method of control circuit and the usefulness of circuit is:
At first, by detecting input voltage controlled discharge or operate as normal; Secondly, the trigger voltage in method of the present invention and the circuit has adjustability, has reduced the difficulty of design trigger voltage; Once more, when static discharge, the leakage current device is operated under the forward voltage, can bear higher electrostatic potential; At last, use this electrostatic protection method and circuit and can effectively improve the electrostatic protection ability, improve the reliability of chip internal circuit I/O end.
Description of drawings
Fig. 1 is existing protective circuit of diode schematic diagram;
Fig. 2 is MOS device or thick oxide layer MOS protective circuit schematic diagram;
Fig. 3 is a SCR protective circuit schematic diagram;
Fig. 4 is the schematic diagram that band of the present invention detects the electrostatic discharge protective circuit of control circuit;
Fig. 5 is the schematic diagram of testing circuit shown in Figure 4.
Embodiment
As shown in Figure 4, a kind of with the electrostatic discharge protective circuit 40 that detects control circuit, comprise testing circuit 41, control circuit 43 and leadage circuit 42.Testing circuit 41, control circuit 43 and leadage circuit 42 all are connected between the I/O end 40a and ground of chip internal circuit; and the I/O end 40a of chip internal circuit is communicated with external pads 40b, and external electric signal enters electrostatic discharge protective circuit 40 or the chip internal circuit that band detects control circuit by external pads 40b.
Because static discharge voltage is than higher, so the design of the trigger voltage of testing circuit 41 is general all apparently higher than the normal working voltage of chip internal circuit, therefore, when if input voltage is imported by external pads 40b, if this voltage is less than trigger voltage, then this input voltage can be judged as operating voltage, at least be the voltage that can not cause damage to the chip internal circuit, at this moment, because band detects the electrostatic discharge protective circuit 40 of control circuit and do not work, directly flow into the chip internal circuit by the I/O end of chip internal circuit with operating voltage corresponding work electric current; If trigger voltage is greater than or equal to trigger voltage; then this input voltage can cause damage to the chip internal circuit; can be judged as static discharge voltage; at this moment; band detects electrostatic discharge protective circuit 40 work of control circuit; static discharge current is released by leadage circuit 42, and static discharge voltage is released fast less than the state of trigger voltage, thus protection chip internal circuit.
The trigger voltage of testing circuit requires the minimum disruptive voltage less than the chip internal circuit when design, can guarantee being perfectly safe of chip internal circuit.Circuit structure according to testing circuit 41, pass between the voltage stabilizing value Vzd of the conducting voltage Veb of trigger voltage Ven and positive-negative-positive triode Q2 and Zener diode ZD is: Ven=Veb+n * Vzd, wherein, n is a natural number, the quantity of expression Zener diode ZD, realize the trigger voltage Ven that requirement reaches by quantity n and the voltage stabilizing value Vzd that selects Zener diode, the trigger voltage that testing circuit 41 as shown in Figure 5 can be realized is 8v.
The band that to design a trigger voltage if desired be 10v detects the electrostatic discharge protective circuit 40 of control circuit; conducting voltage Veb is 0.65v; selecting the voltage stabilizing value Vzd of Zener diode ZD is 5.5v; because the first current-limiting resistance R1 also has certain dividing potential drop effect, therefore select 2 Zener diode ZD of series connection can realize the trigger voltage of 10v.
Only being preferred embodiment of the present invention in sum, is not to be used for limiting practical range of the present invention.Be that all equivalences of doing according to the content of the present patent application claim change and modification, all should belong to technology category of the present invention.
Claims (8)
1. one kind with the electrostatic protection method that detects control circuit, and it is characterized in that: the implementation procedure of this method is as follows
By the input voltage of a testing circuit detection effect on the I/O end of chip internal circuit, when trigger voltage that input voltage is set less than testing circuit, be judged as operating voltage, then directly flow into the chip internal circuit by the I/O end of chip internal circuit with operating voltage corresponding work electric current, described trigger voltage is less than the minimum disruptive voltage of chip internal circuit;
When the input voltage on detecting the I/O end that acts on the chip internal circuit is greater than or equal to trigger voltage, be judged as static discharge voltage, then testing circuit control is released by a leadage circuit with the corresponding static discharge current of static discharge voltage, but not flows into the chip internal circuit.
2. band according to claim 1 detects the electrostatic protection method of control circuit, it is characterized in that: described testing circuit comprises inclined to one side resistance on positive-negative-positive triode, the Zener diode and the 3rd; Pass between the voltage stabilizing value Vzd of the conducting voltage Veb of described trigger voltage Ven and positive-negative-positive triode and Zener diode is: Ven=Veb+n * Vzd, wherein, n is a natural number, the quantity of expression Zener diode is regulated trigger voltage Ven by quantity and the voltage stabilizing value of selecting Zener diode;
When described input voltage during less than trigger voltage Ven, the positive-negative-positive triode is in by state, then connect with the collector electrode of positive-negative-positive triode the 3rd on partially the resistance no current pass through, the voltage that causes the positive-negative-positive transistor collector is low level;
At this moment, the power controlling switch that a control end is connected with the positive-negative-positive transistor collector is in by state, then connect with described power controlling switch second on partially the resistance no current pass through, causing on second partially, the voltage at resistance two ends is low level;
At this moment, on the leadage circuit, control end inserts on second partially that the power switch of releasing of resistance both end voltage is in by state, judge that then described input voltage is an operating voltage, and with operating voltage corresponding work electric current can only be directly I/O end by the chip internal circuit flow into the chip internal circuit;
When described input voltage was greater than or equal to trigger voltage Ven, the positive-negative-positive triode was in conducting state, on the 3rd partially resistance have electric current to pass through, make the voltage of positive-negative-positive transistor collector reach the conducting voltage of power controlling switch; This moment the power controlling switch conduction, on second partially resistance have electric current to pass through, cause on second the voltage at resistance two ends partially to reach the conducting voltage of the power switch of releasing; At this moment, the power switch conducting of releasing, leadage circuit is a path, judges that then described input voltage is a static discharge voltage, makes static discharge current release fast by leadage circuit.
3. the electrostatic discharge protective circuit with the detection control circuit is characterized in that: comprise testing circuit, control circuit and leadage circuit; Wherein,
Testing circuit is connected between the I/O end and ground of described chip internal circuit, comprises Enable Pin and control end; The Enable Pin of testing circuit is electrically connected with the I/O end of chip internal circuit;
Control circuit is connected between the I/O end and ground of described chip internal circuit, described control circuit comprise the power controlling switch and connect with the power controlling switch second on resistance partially; The control end of power controlling switch is electrically connected with the control end of testing circuit;
Leadage circuit is connected between the I/O end and ground of described chip internal circuit, and described leadage circuit comprises the power switch of releasing, and the control end of the power switch of releasing inserts the voltage at inclined to one side resistance two ends on second.
4. band according to claim 3 detects the electrostatic discharge protective circuit of control circuit; it is characterized in that: described power controlling switch is the NMOS pipe; the grid of NMOS pipe is electrically connected with the control end of testing circuit as the control end of power controlling switch; the drain electrode of NMOS pipe is electrically connected with the I/O end of chip internal circuit, is connected in series on described second resistance partially between the source electrode of NMOS pipe and the ground.
5. band according to claim 4 detects the electrostatic discharge protective circuit of control circuit; it is characterized in that: the described power switch of releasing is a NPN type triode; the collector electrode of NPN type triode is electrically connected with the I/O end of chip internal circuit; the grounded emitter of NPN type triode, the base stage of NPN type triode insert the voltage at inclined to one side resistance two ends on described second as the control end of the power switch of releasing.
6. band according to claim 5 detects the electrostatic discharge protective circuit of control circuit, it is characterized in that: described testing circuit comprises inclined to one side resistance on positive-negative-positive triode, the Zener diode and the 3rd; Wherein, the emitting stage of positive-negative-positive triode is the Enable Pin of described testing circuit, be connected in series on the 3rd resistance partially between the collector electrode of positive-negative-positive triode and the ground, the collector electrode of positive-negative-positive triode is as the control end of described testing circuit, is connected in series Zener diode between the base stage of positive-negative-positive triode and the ground.
7. band according to claim 6 detects the electrostatic discharge protective circuit of control circuit, it is characterized in that: be connected in series Zener diode and the 4th current-limiting resistance between the described testing circuit, the base stage of its positive-negative-positive triode and ground.
8. detect the electrostatic discharge protective circuit of control circuit according to the described band of arbitrary claim in the claim 3 to 7; it is characterized in that: flow into testing circuit, control circuit and leadage circuit at static discharge current, one first current-limiting resistance of perhaps flowing through earlier before the operating current inflow chip internal circuit.
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| CNA2009100000617A CN101483339A (en) | 2009-01-06 | 2009-01-06 | Electrostatic protection method and circuit having detection control circuit |
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| CNA2009100000617A CN101483339A (en) | 2009-01-06 | 2009-01-06 | Electrostatic protection method and circuit having detection control circuit |
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| WO2013120259A1 (en) * | 2012-02-15 | 2013-08-22 | Qualcomm Incorporated | Surge protection for differential input/output interfaces |
| CN103701442A (en) * | 2012-09-27 | 2014-04-02 | 万国半导体股份有限公司 | Active clamp protection circuit for power semiconductor device for high frequency switching |
| CN104242275A (en) * | 2013-06-06 | 2014-12-24 | 普诚科技股份有限公司 | Electrostatic discharge protection circuit capable of bearing excess electric property stress and avoiding latching |
| CN104766858A (en) * | 2014-01-06 | 2015-07-08 | 旺宏电子股份有限公司 | Electrostatic discharge protection device |
| CN106449603A (en) * | 2016-08-30 | 2017-02-22 | 绍兴嘉恒创能电子科技有限公司 | Local electrostatic chip protection circuit of actively injecting current to trigger locking |
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| CN109449911A (en) * | 2018-12-26 | 2019-03-08 | 上海艾为电子技术股份有限公司 | A kind of protection circuit |
| CN110120661A (en) * | 2018-02-06 | 2019-08-13 | 英飞凌科技股份有限公司 | Active esd clamp position deactivates |
| CN110266299A (en) * | 2019-06-18 | 2019-09-20 | 麦歌恩电子(上海)有限公司 | Magnetic switch chip |
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| WO2013120259A1 (en) * | 2012-02-15 | 2013-08-22 | Qualcomm Incorporated | Surge protection for differential input/output interfaces |
| US9401594B2 (en) | 2012-02-15 | 2016-07-26 | Qualcomm Incorporated | Surge protection for differential input/output interfaces |
| CN103701442A (en) * | 2012-09-27 | 2014-04-02 | 万国半导体股份有限公司 | Active clamp protection circuit for power semiconductor device for high frequency switching |
| CN104242275A (en) * | 2013-06-06 | 2014-12-24 | 普诚科技股份有限公司 | Electrostatic discharge protection circuit capable of bearing excess electric property stress and avoiding latching |
| CN104766858A (en) * | 2014-01-06 | 2015-07-08 | 旺宏电子股份有限公司 | Electrostatic discharge protection device |
| CN104766858B (en) * | 2014-01-06 | 2018-05-04 | 旺宏电子股份有限公司 | Electrostatic discharge protective equipment |
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| CN107359606A (en) * | 2017-08-31 | 2017-11-17 | 广东欧珀移动通信有限公司 | Electrostatic protection apparatus, radio circuit and electronic equipment |
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| CN110120661B (en) * | 2018-02-06 | 2021-10-01 | 英飞凌科技股份有限公司 | Active ESD clamp deactivation |
| CN110556808A (en) * | 2018-06-04 | 2019-12-10 | 茂达电子股份有限公司 | Electrostatic discharge protection circuit |
| CN109342837A (en) * | 2018-10-31 | 2019-02-15 | 许继集团有限公司 | A kind of electrostatic measurement Circuits and Systems |
| CN109449911A (en) * | 2018-12-26 | 2019-03-08 | 上海艾为电子技术股份有限公司 | A kind of protection circuit |
| CN109449911B (en) * | 2018-12-26 | 2023-11-28 | 上海艾为电子技术股份有限公司 | Protection circuit |
| WO2020182072A1 (en) * | 2019-03-13 | 2020-09-17 | 惠科股份有限公司 | Display panel electrostatic protection apparatus and method, and display apparatus |
| US11966129B2 (en) | 2019-03-13 | 2024-04-23 | HKC Corporation Limited | Display panel static electricity protection device, display panel static electricity protection method, and display device |
| CN110266299A (en) * | 2019-06-18 | 2019-09-20 | 麦歌恩电子(上海)有限公司 | Magnetic switch chip |
| WO2022155918A1 (en) * | 2021-01-22 | 2022-07-28 | 华为技术有限公司 | Electronic device, photoelectric receiver, optical module, and network device |
| CN112993960A (en) * | 2021-03-05 | 2021-06-18 | 上海有个机器人有限公司 | Power supply bleeder circuit and electronic equipment |
| WO2023116218A1 (en) * | 2021-12-21 | 2023-06-29 | 中兴通讯股份有限公司 | Residual voltage elimination circuit and electronic apparatus |
| CN114498596A (en) * | 2022-03-29 | 2022-05-13 | 武汉市聚芯微电子有限责任公司 | Electrostatic protection circuit, electrostatic protection method and integrated circuit |
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