CN101482661A - Weld pad structure and LCD panel including the same - Google Patents
Weld pad structure and LCD panel including the same Download PDFInfo
- Publication number
- CN101482661A CN101482661A CNA2009101110898A CN200910111089A CN101482661A CN 101482661 A CN101482661 A CN 101482661A CN A2009101110898 A CNA2009101110898 A CN A2009101110898A CN 200910111089 A CN200910111089 A CN 200910111089A CN 101482661 A CN101482661 A CN 101482661A
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- layer
- pad structure
- insulation course
- welding pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a weld pad structure and a liquid crystal display panel comprising the same, the weld pad structure comprises a substrate, a first conductive layer, an insulation layer and a second conductive layer, the first conductive layer is arranged on the substrate, the first conductive layer is covered by the insulation layer, the second conductive layer is arranged on the insulation layer, the insulation layer has an opening for exposing the first conductive layer, the second conductive layer has a first part and a second part which are neighboring with each other, the first conductive layer is arranged between the first part and the second part. The weld pad structure has a small segment difference between the first conductive layer and the second conductive layer and can prevent the transparent conducting layer from generating the break wire on a grade climbing. The liquid crystal display panel having the weld pad structure can reach the good display quality.
Description
[technical field]
The present invention relates to a kind of welding pad structure and display panel, particularly a kind of welding pad structure (Bonding Pad Structure) and display panels (Liquid Crystal Display Panel, LCD panel) with flat surfaces.
[background technology]
Along with the development of photoelectric technology and semiconductor fabrication, (Flat PanelDispl ay, FPD), for example LCD is fit to modern life pattern because of having ultra-thin characteristics such as light to flat-type display more, becomes the main flow of display product gradually.
Generally speaking, LCD is made up of display panels and backlight module (BacklightModule), and display panels is made up of active assembly array base plate (Active devicearray substrate), colored optical filtering substrates (Color Filter Substrate) and liquid crystal layer, wherein, active assembly array base plate comprises a plurality of picture elements unit, multi-strip scanning line and data line and a plurality of driving component.Open or close driving component by sweep trace, can make data line apply or not apply image data for the picture element unit.
Particularly, a plurality of welding pad structures are located at the end of sweep trace and data line respectively, and in order to be electrically connected to chip for driving.So, the image data that chip for driving provides can be delivered to sweep trace and data line via welding pad structure, and drives the picture element unit.
Fig. 1 is a U.S. Pat 7,211, the diagrammatic cross-section of No. 738 disclosed a kind of welding pad structures.Please refer to Fig. 1, this welding pad structure 10 comprises: substrate 30, first conductive layer 42, insulation course 44, second conductive layer 46 and transparency conducting layer 50.Particularly, transparency conducting layer 50 is electrically connected first conductive layer 42 and second conductive layer 46 by contact window 40, that is, except in second conductive layer 46, forming the first conductive path I, also in first conductive layer 42, form the second conductive path II.
But,, cause and can't transmit image data via the first conductive path I because the disconnection portion that factor produced 58 of processing technology can make the first conductive path I interrupt.Yet, the image data that provides from drive circuit substrate 54 still can transmit via anisotropic conductive 56, circuit base plate 52, anisotropic conductive 56, transparency conducting layer 50 and first conductive layer 42 (that is second conductive path II), and the transmission of image data can not interrupted.
It should be noted that the degree of depth of contact window 40 as shown in Figure 1, or be called the section difference S between first conductive layer 42 and second conductive layer 46 that it is the thickness d i that the thickness d 2 of second conductive layer 46 adds insulation course 44.Because transparency conducting layer 50 utilizes the sputtering method made, and the gradient coating performance of sputtering method is limited.Therefore, S is excessive when the section difference, may produce broken string at the transparency conducting layer 50 of climbing place of contact window 40, opens circuit so that the second conductive path II also becomes.
[summary of the invention]
One of the technical problem to be solved in the present invention is to provide a kind of welding pad structure, and this welding pad structure has less section between first conductive layer and second conductive layer poor.
Two of the technical problem to be solved in the present invention is to provide a kind of display panels, and it has above-mentioned welding pad structure and can reach superior display quality.
One of the technical problem to be solved in the present invention is achieved in that a kind of welding pad structure, comprise a substrate, one first conductive layer, one insulation course and one second conductive layer, described first conductive layer is arranged on the described substrate, described insulation course, cover described first conductive layer, described second conductive layer is arranged on the described insulation course, wherein, described insulation course has an opening, expose described first conductive layer, described second conductive layer has a first adjacent one another are and a second portion, and described first conductive layer is between this first part and this second portion.
In one embodiment of this invention, above-mentioned welding pad structure also comprises a transparency conducting layer, and this transparency conducting layer covers first conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects first conductive layer and second conductive layer.
In one embodiment of this invention, the material of above-mentioned transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
In one embodiment of this invention, in above-mentioned welding pad structure, when the thickness of first conductive layer less than insulation course and both thickness of second conductive layer and the time, welding pad structure also comprises one the 3rd conductive layer, the 3rd conductive layer is arranged on first conductive layer in the opening.Above-mentioned welding pad structure also comprises a transparency conducting layer, and this transparency conducting layer covers second conductive layer, insulation course and the 3rd conductive layer, and transparency conducting layer electrically connects second conductive layer, the 3rd conductive layer and first conductive layer.
One of the technical problem to be solved in the present invention can also realize like this: a kind of welding pad structure, comprise a substrate, one first conductive layer, an insulation course and one second conductive layer, described first conductive layer is arranged on the described substrate, described insulation course, cover described first conductive layer, described second conductive layer is arranged on the described insulation course, and wherein, described first conductive layer has a first adjacent one another are and a second portion; And described insulation course has one first opening and one second opening, and described first opening exposes a described part, and described second opening exposes described two parts; Described two conductive layers are between this first part and this second portion.
In one embodiment of this invention, above-mentioned welding pad structure also comprises a transparency conducting layer, and this transparency conducting layer covers first conductive layer, insulation course and second conductive layer, and transparency conducting layer electrically connects first conductive layer and second conductive layer.
In one embodiment of this invention, the material of above-mentioned transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
In one embodiment of this invention, in above-mentioned welding pad structure, when the thickness of first conductive layer during less than both thickness sum of insulation course and second conductive layer, welding pad structure also comprises the 3rd conductive layer, and the 3rd conductive layer is arranged on first conductive layer in first opening and second opening.Above-mentioned welding pad structure also comprises a transparency conducting layer, and this transparency conducting layer covers the 3rd conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects the 3rd conductive layer, second conductive layer and first conductive layer.
Two of the technical problem to be solved in the present invention is achieved in that a kind of display panels, comprise an active assembly array base plate, one colored optical filtering substrates, one liquid crystal layer, described active assembly array base plate comprises a plurality of welding pad structures, this welding pad structure is arranged on the described active assembly array base plate, and described colored optical filtering substrates subtend is in this active assembly array base plate; Described liquid crystal layer is arranged between this active assembly array base plate and this colored optical filtering substrates, wherein, each welding pad structure comprises a substrate, one first conductive layer, one insulation course and one second conductive layer, described first conductive layer is arranged on the described substrate, described insulation course, cover described first conductive layer, described second conductive layer is arranged on the described insulation course, described insulation course has an opening, expose described first conductive layer, described second conductive layer has a first adjacent one another are and a second portion, and described first conductive layer is between this first part and this second portion.In one embodiment of this invention, above-mentioned welding pad structure also comprises a transparency conducting layer, and this transparency conducting layer covers first conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects first conductive layer and second conductive layer.
In one embodiment of this invention, the material of above-mentioned transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
In one embodiment of this invention, in above-mentioned welding pad structure, when the thickness of first conductive layer less than insulation course and both thickness of second conductive layer and the time, welding pad structure also comprises one the 3rd conductive layer, the 3rd conductive layer is arranged on first conductive layer in the opening.Above-mentioned welding pad structure also comprises a transparency conducting layer, and this transparency conducting layer covers second conductive layer, insulation course and the 3rd conductive layer, and transparency conducting layer electrically connects second conductive layer, the 3rd conductive layer and first conductive layer.
Two of the technical problem to be solved in the present invention can also realize like this: a kind of display panels, comprise an active assembly array base plate, one colored optical filtering substrates, one liquid crystal layer, described active assembly array base plate comprises a plurality of welding pad structures, this welding pad structure is arranged on the described active assembly array base plate, and described colored optical filtering substrates subtend is in this active assembly array base plate; Described liquid crystal layer is arranged between this active assembly array base plate and this colored optical filtering substrates, wherein, each welding pad structure, comprise a substrate, one first conductive layer, an insulation course and one second conductive layer, described first conductive layer is arranged on the described substrate, and described insulation course covers described first conductive layer, described second conductive layer is arranged on the described insulation course, and described first conductive layer has a first adjacent one another are and a second portion; And described insulation course has one first opening and one second opening, and described first opening exposes a described part, and described second opening exposes described two parts; Described two conductive layers are between this first part and this second portion.In one embodiment of this invention, above-mentioned welding pad structure also comprises a transparency conducting layer, and this transparency conducting layer covers first conductive layer, insulation course and second conductive layer, and transparency conducting layer electrically connects first conductive layer and second conductive layer.
In one embodiment of this invention, the material of above-mentioned transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
In one embodiment of this invention, in above-mentioned welding pad structure, when the thickness of first conductive layer during less than both thickness sum of insulation course and second conductive layer, welding pad structure also comprises the 3rd conductive layer, and the 3rd conductive layer is arranged on first conductive layer in first opening and second opening.Above-mentioned welding pad structure also comprises a transparency conducting layer, and this transparency conducting layer covers the 3rd conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects the 3rd conductive layer, second conductive layer and first conductive layer.
Welding pad structure of the present invention and display panels have following advantage at least: it is arrangement interlaced with each other that this welding pad structure makes first conductive layer and second conductive layer, and the section that reduces between first conductive layer and second conductive layer is poor, can prevent that transparency conducting layer from producing broken string in climbing place.In addition, further the section of reducing is poor also can to utilize the 3rd conductive layer.Perhaps making does not have the existence of section difference between first conductive layer and second conductive layer, and makes welding pad structure have smooth surface, and thus, chip for driving can directly be arranged on the welding pad structure.Moreover the section that also can further utilize the 3rd conductive layer to reduce between first conductive layer and second conductive layer is poor.And the display panels with this welding pad structure can reach superior display quality.
[description of drawings]
The present invention is further illustrated in conjunction with the embodiments with reference to the accompanying drawings.
Fig. 1 is a U.S. Pat 7,211, the diagrammatic cross-section of No. 738 disclosed a kind of welding pad structures.
Fig. 2 is the schematic top plan view of first and second embodiment of welding pad structure of the present invention.
Fig. 3 is the diagrammatic cross-section along the A-A ' line of Fig. 2.
Fig. 4 is the welding pad structure diagrammatic cross-section along first embodiment of the B-B ' line of Fig. 2.
Fig. 5 is the welding pad structure diagrammatic cross-section along second embodiment of the B-B ' line of Fig. 2.
Fig. 6 is the schematic top plan view of the 4th embodiment of welding pad structure of the present invention.
Fig. 7 is the diagrammatic cross-section along the C-C ' line of Fig. 6.
Fig. 8 A～Fig. 8 I is the diagrammatic cross-section of the making flow process of welding pad structure of the present invention.
Fig. 9 is the schematic top plan view of the 5th and the 6th embodiment of welding pad structure of the present invention.
Figure 10 is the welding pad structure diagrammatic cross-section along the 5th embodiment of the D-D ' line of Fig. 9.
Figure 11 is the welding pad structure diagrammatic cross-section along the 6th embodiment of the D-D ' line of Fig. 9.
Figure 12 is the structural representation of display panels of the present invention.
[embodiment]
Please jointly with reference to Fig. 2 to Fig. 4, Fig. 2 is the schematic top plan view of first and second embodiment of welding pad structure of the present invention.Fig. 3 is the diagrammatic cross-section along the A-A ' line of Fig. 2.Fig. 4 is the welding pad structure diagrammatic cross-section along first embodiment of the B-B ' line of Fig. 2.This welding pad structure 100 comprises: substrate 110, first conductive layer 120, insulation course 130 and second conductive layer 140.First conductive layer 120 is arranged on the substrate 110.Insulation course 130 covers first conductive layer 120, and insulation course 130 has an opening 132, exposes first conductive layer 120.Second conductive layer 140 is arranged on the insulation course 130, and second conductive layer 140 has a first 142 adjacent one another are and a second portion 144, and first conductive layer 120 is between first part 142 and second portion 144.
Please continue with reference to Fig. 4, above-mentioned welding pad structure 100 can more comprise a transparency conducting layer 150, covers first conductive layer 120, insulation course 130 and second conductive layer 140, and transparency conducting layer 150 electrically connects first conductive layer 120 and second conductive layer 140.The material of transparency conducting layer 150 comprises indium tin oxide or indium-zinc oxide.It should be noted that the protective seam 170 that illustrates as Fig. 3 covers on the welding pad structure 100, with protection welding pad structure 100.Yet as the zone that is coated with transparency conducting layer 150 that Fig. 4 illustrates, protective seam 170 is removed, so that transparency conducting layer 150 can see through opening 132 first conductive layer 120 and second conductive layer 140 is electrically connected.
As the welding pad structure 100 that Fig. 2 to Fig. 4 illustrated, be with the difference of traditional welding pad structure maximum: be coated with in the zone of transparent electrode layer 150, first conductive layer 120 and second conductive layer 140 are arrangements interlaced with each other, so can reduce the section difference S1 between first conductive layer 120 and second conductive layer 140.More specifically, as shown in Figure 4, the section difference S1 in the present embodiment between first conductive layer 120 and second conductive layer 140 is:
Section difference S1=(the thickness d 2+ insulation course 130 thickness d i of second conductive layer 140)-(thickness d 1 of first conductive layer 120)
Apparently, in the comparison diagram 1 present embodiment of traditional welding pad structure and Fig. 4 as can be known, the section difference S1 between first conductive layer 120 of present embodiment and second conductive layer 140 has lacked the thickness d 1 of first conductive layer 120 compared to the section difference S (the thickness d i of the thickness d 2+ insulation course 44 of second conductive layer 46) of the described welding pad structure 10 of known Fig. 1.That is to say that the welding pad structure 100 of present embodiment can reduce the section difference S1 between first conductive layer 120 and second conductive layer 140 effectively.In other words, when utilizing sputtering method to make transparency conducting layer 150, a S1 reduces owing to the section difference, and can prevent that transparency conducting layer 150 from producing climbing and breaking at opening 132 places.
Again as shown in Figure 5, Fig. 5 is the welding pad structure diagrammatic cross-section along second embodiment of the B-B ' line of Fig. 2.This welding pad structure 102 is similar with the welding pad structure 100 of Fig. 4, and identical assembly indicates with identical symbol.In this embodiment, the thickness d 1 of first conductive layer 120 equals insulation course 130 and second conductive layer 140 both thickness d i, d2 sum.
Particularly, when the thickness d i sum of the thickness d 2 of second conductive layer 140 and insulation course 130 equaled the thickness d 1 of first conductive layer 120, a section difference S2 was 0.This welding pad structure 102 can more comprise a transparency conducting layer 150, covers first conductive layer 120, insulation course 130 and second conductive layer 140, and transparency conducting layer 150 electrically connects first conductive layer 120 and second conductive layer 140.The material of transparency conducting layer 150 comprises indium tin oxide or indium-zinc oxide.Particularly,, chip for driving (not illustrating) can be set directly on this welding pad structure 102, also can reach excellent electrical property and connect so can not need make transparency conducting layer 150 because this welding pad structure 102 has smooth surface.
Please jointly with reference to Fig. 6 and Fig. 7, Fig. 6 is the schematic top plan view of the 4th embodiment of welding pad structure of the present invention.Fig. 7 is the diagrammatic cross-section along the C-C ' line of Fig. 6.This welding pad structure 104 is similar with above-mentioned welding pad structure 100,102, and identical assembly is represented with identical symbol.In the welding pad structure 104 of this embodiment, when the thickness d 1 of first conductive layer 120 during less than insulation course 130 and both thickness d i of second conductive layer 140, d2 sum, welding pad structure 104 comprises that also one the 3rd conductive layer, 160, the three conductive layers 160 are arranged on first conductive layer 120 in the opening 132.
Particularly, this 3rd conductive layer 160 is if the reflection horizon when making semitransparent and half-reflective liquid crystal display, promptly use the 3rd conductive layer 160 further the section of minimizing differ from S3, promptly as shown in Figure 7:
Section difference S3=(the thickness d 2+ thickness of insulating layer di of second conductive layer 140)-(thickness d 3 of thickness d 1+ the 3rd conductive layer 160 of first conductive layer 120)
The thickness d 1 that equals first conductive layer 120 when the thickness d 2 of second conductive layer 140 and thickness of insulating layer di sum is during with thickness d 3 sums of the 3rd conductive layer 160, and it is 0 that section differs from a S3, can obtain to have the welding pad structure 104 of flat surfaces.
In addition, this welding pad structure 104 also can comprise a transparency conducting layer 150, covers second conductive layer 140, insulation course 130 and the 3rd conductive layer 160, and transparency conducting layer 150 electrically connects second conductive layer 140, the 3rd conductive layer 160 and first conductive layer 120.As previously mentioned, when section difference S3 was 0, welding pad structure 104 had flat surfaces, therefore, even can not need make transparency conducting layer 150 and chip for driving (not illustrating) can be set directly on this welding pad structure 104, also can reach excellent electrical property and connect.
In sum, above-mentioned welding pad structure 100,102,104 has reduced section difference S1, S2, the S3 between first conductive layer 120 and second conductive layer 140 significantly.When utilizing sputtering method to make transparency conducting layer 150,, and then can prevent that transparency conducting layer 150 from producing climbing and breaking at opening 132 places owing to section difference S1, S2, S3 reduce.
Fig. 8 A～Fig. 8 I is the diagrammatic cross-section of the making flow process of welding pad structure of the present invention.The method for making of this welding pad structure is that the welding pad structure 100 with Fig. 4 is example and utilizes five known road light shield processing procedures (fivemasks process) to make, and similarly method for making also can be applicable on the welding pad structure 102,104 of Fig. 5 and Fig. 7.
At first, please refer to Fig. 8 A, a substrate 110 is provided, and on substrate 110, form one first conductive material layer (not illustrating).Afterwards, utilize well-known first road this first conductive material layer of light shield processing procedure patterning, and form first conductive layer 120 shown in Fig. 8 A.
Then, please refer to Fig. 8 B, on substrate 110, form an insulation course 130 and semi-conductor layer 180.The method that forms this insulation course 130 and semiconductor layer 180 can be the long-pending method in chemical gaseous phase Shen.Please refer to Fig. 8 C again, utilize the second road light shield processing procedure to carry out patterning for semiconductor layer 180, owing to do not have photoresistance pattern (not illustrating) to cover in the zone of welding pad structure 100, so semiconductor layer 180 is removed fully.
Then, please refer to Fig. 8 D, on substrate 110, form one second conductive material layer 140 '.The method that forms this second conductive material layer 140 ' can be the long-pending method in chemical gaseous phase Shen.Then, please refer to Fig. 8 E, utilize the 3rd road light shield processing procedure to carry out patterning, and form second conductive layer 140 for second conductive material layer 140 '.Particularly, second conductive layer 140 has first adjacent one another are 142 and second portion 144, and first conductive layer 120 is between first part 142 and second portion 144.
Please refer to Fig. 8 F again, form a protective seam 170 on substrate 110, the method that forms this protective seam 170 can be the long-pending method in chemical gaseous phase Shen.Then, please refer to Fig. 8 G, utilize the 4th road light shield processing procedure to carry out patterning for protective seam 170 and insulation course 130, and remove protective seam 170 comprehensively and form an opening 132 in insulation course 130, this opening 132 exposes first conductive layer 120.
Please refer to Fig. 8 H, form a transparent conductive material layer 150 ' on substrate 110, the method that forms this transparent conductive material layer 150 ' can be a sputtering method.It should be noted that because first conductive layer 120 and second conductive layer 140 are arrangements interlaced with each other, reduced the section difference S1 between first conductive layer 120 and second conductive layer 140.So, can prevent that in this step transparent conductive material layer 150 ' from producing the problem of climbing broken string.
At last, please refer to Fig. 8 I, utilize the 5th road light shield processing procedure to carry out patterning, to form transparency conducting layer 150 for transparent conductive material layer 150 '.In sum, via the making step of above-mentioned Fig. 8 A～Fig. 8 I, can obtain having welding pad structure 100 than segment difference S1.
Please jointly with reference to Fig. 9 and Figure 10, Fig. 9 is the schematic top plan view of the 5th and the 6th embodiment of welding pad structure of the present invention.Figure 10 is the welding pad structure diagrammatic cross-section along the 5th embodiment of the D-D ' line of Fig. 9.This welding pad structure 106 comprises: substrate 110, first conductive layer 120, insulation course 130 and second conductive layer 140.First conductive layer 120 is arranged on the substrate 110, and first conductive layer 120 has first adjacent one another are 122 and second portion 124.Insulation course 130 covers first conductive layer 120, and insulation course 130 has first opening 134 and second opening, 136, the first openings 134 expose first 122, and second opening 136 exposes second portion 124.Second conductive layer 140 is arranged on the insulation course 130, and second conductive layer 140 is between first part 122 and second portion 124.
Similarly, in welding pad structure 106, can make the thickness d 1 of first conductive layer 120 equal insulation course 130 and second conductive layer 140 both thickness d i, d2 sum, the thickness d 1 that can also make first conductive layer 120 is less than insulation course 130 and second conductive layer 140 both thickness d i, d2 sum (not illustrating).Similarly, welding pad structure 106 can reduce the section difference S4 between first conductive layer 120 and second conductive layer 140, produces the climbing broken string so can prevent transparency conducting layer 150 at first opening 134 and second opening, 136 places.
Please refer to Figure 11, Figure 11 is the welding pad structure diagrammatic cross-section along the 6th embodiment of the D-D ' line of Fig. 9.In this welding pad structure 108, when the thickness d 1 of first conductive layer 120 during less than insulation course 130 and both thickness d i of second conductive layer 140, d2 sum, welding pad structure 108 also comprises the 3rd conductive layer 160, is arranged on first conductive layer 120 in first opening 132 and second opening 134.
This 3rd conductive layer 160 can be the reflection horizon when making semitransparent and half-reflective liquid crystal display, promptly uses the further section of minimizing difference S5 of the 3rd conductive layer 160, as shown in figure 11:
Section difference S5=(the thickness d 2+ thickness of insulating layer di of second conductive layer 140)-(thickness d 3 of thickness d 1+ the 3rd conductive layer 160 of first conductive layer 120)
In addition, this welding pad structure 108 also can comprise a transparency conducting layer 150, covers the 3rd conductive layer 160, insulation course 130 and second conductive layer 140, and transparency conducting layer 150 electrically connects the 3rd conductive layer 160, second conductive layer 140 and first conductive layer 120.Certainly, when section difference S5 is 0, even can not need make transparency conducting layer 150, also chip for driving (illustrating) can be set directly on this welding pad structure 108.In like manner, above-mentioned welding pad structure 106,108 also can utilize the step that is similar to Fig. 8 A～Fig. 8 I to make.
Please refer to Figure 12, Figure 12 is the structural representation of display panels of the present invention.This display panels 200 comprises: active assembly array base plate 210, colored optical filtering substrates 220 and liquid crystal layer 230.Active assembly array base plate 210 comprises: a plurality of welding pad structures (not illustrating) are arranged on the active assembly array base plate 210.Each welding pad structure for example adopts wherein a kind of of above-mentioned welding pad structure 100,102,104,106,108.Colored optical filtering substrates 220 subtends are in active assembly array base plate 210.Liquid crystal layer 230 is arranged between active assembly array base plate 210 and the colored optical filtering substrates 220.
Because this display panels 200 uses above-mentioned welding pad structure 100,102,104,106,108, when making chip for driving (not illustrating) on being connected to welding pad structure 100,102,104,106 or 108, can avoid the image data transmission failure that causes because of the problem that opens circuit.Thus, this display panels 200 has superior display quality.
Though the present invention discloses as above with preferred embodiment; but it is not in order to limit the present invention; those skilled in the art in the technical field under any; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention should be with being as the criterion that claim was defined.
Claims (20)
1. welding pad structure, comprise a substrate, one first conductive layer, an insulation course and one second conductive layer, described first conductive layer is arranged on the described substrate, described insulation course, cover described first conductive layer, described second conductive layer is arranged on the described insulation course, it is characterized in that: described insulation course has an opening, expose described first conductive layer, described second conductive layer has a first adjacent one another are and a second portion, and described first conductive layer is between this first part and this second portion.
2. welding pad structure as claimed in claim 1 is characterized in that: also comprise a transparency conducting layer, this transparency conducting layer covers described first conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects described first conductive layer and second conductive layer.
3. welding pad structure as claimed in claim 2 is characterized in that: the material of described transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
4. welding pad structure as claimed in claim 1, it is characterized in that: when the thickness of described first conductive layer during less than both thickness sum of insulation course and second conductive layer, this welding pad structure also comprises one the 3rd conductive layer, and the 3rd conductive layer is arranged on first conductive layer in the opening on the described insulation course.
5. welding pad structure as claimed in claim 4, it is characterized in that: also comprise a transparency conducting layer, this transparency conducting layer covers described second conductive layer, insulation course and the 3rd conductive layer, and this transparency conducting layer electrically connects described second conductive layer, the 3rd conductive layer and first conductive layer.
6. welding pad structure, comprise a substrate, one first conductive layer, an insulation course and one second conductive layer, described first conductive layer is arranged on the described substrate, described insulation course covers described first conductive layer, described second conductive layer is arranged on the described insulation course, it is characterized in that: described first conductive layer has a first adjacent one another are and a second portion; And described insulation course has one first opening and one second opening, and described first opening exposes a described part, and described second opening exposes described two parts; Described two conductive layers are between this first part and this second portion.
7. welding pad structure as claimed in claim 6 is characterized in that: also comprise a transparency conducting layer, this transparency conducting layer covers a described conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects a described conductive layer and second conductive layer.
8. welding pad structure as claimed in claim 7 is characterized in that: the material of described conductive layer comprises indium tin oxide or indium-zinc oxide.
9. welding pad structure as claimed in claim 6, it is characterized in that: when the thickness of this first conductive layer during less than both thickness sum of this insulation course and this second conductive layer, this welding pad structure also comprises one the 3rd conductive layer, and the 3rd conductive layer is arranged on first conductive layer in described first opening and second opening.
10. welding pad structure as claimed in claim 9, it is characterized in that: also comprise a transparency conducting layer, this transparency conducting layer covers described the 3rd conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects described the 3rd conductive layer, second conductive layer and first conductive layer.
11. display panels, comprise an active assembly array base plate, one colored optical filtering substrates, one liquid crystal layer, described active assembly array base plate comprises a plurality of welding pad structures, this welding pad structure is arranged on the described active assembly array base plate, and described colored optical filtering substrates subtend is in this active assembly array base plate; Described liquid crystal layer is arranged between this active assembly array base plate and this colored optical filtering substrates, each welding pad structure comprises a substrate, one first conductive layer, one insulation course and one second conductive layer, described first conductive layer is arranged on the described substrate, described insulation course, cover described first conductive layer, described second conductive layer is arranged on the described insulation course, it is characterized in that: described insulation course has an opening, expose described first conductive layer, described second conductive layer has a first adjacent one another are and a second portion, and described first conductive layer is between this first part and this second portion.
12. display panels as claimed in claim 11, it is characterized in that: described welding pad structure also comprises a transparency conducting layer, this transparency conducting layer covers described first conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects described first conductive layer and second conductive layer.
13. display panels as claimed in claim 12 is characterized in that: the material of described transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
14. display panels as claimed in claim 11, it is characterized in that: when the thickness of described first conductive layer during less than both thickness sum of insulation course and second conductive layer, described welding pad structure also comprises one the 3rd conductive layer, and the 3rd conductive layer is arranged on this first conductive layer in the opening of described insulation course.
15. display panels as claimed in claim 14, it is characterized in that: described welding pad structure also comprises a transparency conducting layer, this transparency conducting layer covers described second conductive layer, insulation course and the 3rd conductive layer, and this transparency conducting layer electrically connects described second conductive layer, the 3rd conductive layer and first conductive layer.
16. display panels, comprise an active assembly array base plate, one colored optical filtering substrates, one liquid crystal layer, described active assembly array base plate comprises a plurality of welding pad structures, this welding pad structure is arranged on the described active assembly array base plate, and described colored optical filtering substrates subtend is in this active assembly array base plate; Described liquid crystal layer is arranged between this active assembly array base plate and this colored optical filtering substrates, each welding pad structure, comprise a substrate, one first conductive layer, an insulation course and one second conductive layer, described first conductive layer is arranged on the described substrate, described insulation course, cover described first conductive layer, described second conductive layer is arranged on the described insulation course, it is characterized in that: described first conductive layer has a first adjacent one another are and a second portion; And described insulation course has one first opening and one second opening, and described first opening exposes a described part, and described second opening exposes described two parts; Described two conductive layers are between this first part and this second portion.
17. display panels as claimed in claim 16, it is characterized in that: described welding pad structure also comprises a transparency conducting layer, this transparency conducting layer covers described first conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects described first conductive layer and second conductive layer.
18. display panels as claimed in claim 17 is characterized in that: the material of described transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
19. display panels as claimed in claim 16, it is characterized in that: when the thickness of described first conductive layer during less than both thickness sum of insulation course and second conductive layer, this welding pad structure also comprises one the 3rd conductive layer, and the 3rd conductive layer is arranged on first conductive layer in described first opening and second opening.
20. display panels as claimed in claim 19, it is characterized in that: described welding pad structure also comprises a transparency conducting layer, this transparency conducting layer covers described the 3rd conductive layer, insulation course and second conductive layer, and this transparency conducting layer electrically connects described the 3rd conductive layer, second conductive layer and first conductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101110898A CN101482661B (en) | 2009-02-24 | 2009-02-24 | Weld pad structure and LCD panel including the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101110898A CN101482661B (en) | 2009-02-24 | 2009-02-24 | Weld pad structure and LCD panel including the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101482661A true CN101482661A (en) | 2009-07-15 |
| CN101482661B CN101482661B (en) | 2010-12-01 |
Family
ID=40879850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101110898A Expired - Fee Related CN101482661B (en) | 2009-02-24 | 2009-02-24 | Weld pad structure and LCD panel including the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101482661B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390509A (en) * | 2015-12-15 | 2016-03-09 | 深圳市华星光电技术有限公司 | Fabrication method of array substrate, array substrate and liquid crystal panel |
| CN113257738A (en) * | 2021-06-02 | 2021-08-13 | 苏州华星光电技术有限公司 | Preparation method of array substrate, array substrate and display panel |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100255591B1 (en) * | 1997-03-06 | 2000-05-01 | 구본준 | Connecting structure of bus line in thin film transistor and the method of manufacturing the same |
| US20060046374A1 (en) * | 2004-09-01 | 2006-03-02 | Toppoly Optoelectronics Corp. | Conducting line terminal structure for display device |
-
2009
- 2009-02-24 CN CN2009101110898A patent/CN101482661B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390509A (en) * | 2015-12-15 | 2016-03-09 | 深圳市华星光电技术有限公司 | Fabrication method of array substrate, array substrate and liquid crystal panel |
| CN105390509B (en) * | 2015-12-15 | 2018-09-18 | 深圳市华星光电技术有限公司 | A kind of production method of array substrate, array substrate and liquid crystal display panel |
| CN113257738A (en) * | 2021-06-02 | 2021-08-13 | 苏州华星光电技术有限公司 | Preparation method of array substrate, array substrate and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101482661B (en) | 2010-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101661174B (en) | Liquid crystal display panel and manufacturing method thereof | |
| CN112002715B (en) | Array substrate and display panel | |
| US20110317121A1 (en) | Flat display device integrated with photovoltaic cell | |
| US9343621B2 (en) | Liquid crystal display panel and manufacturing method thereof | |
| US8179494B2 (en) | Liquid crystal display and substrate thereof | |
| WO2022062723A1 (en) | Display panel, preparation method therefor, display device, and splicing display device | |
| CN101236972A (en) | Thin film transistor substrate | |
| CN101452172B (en) | Display device and electronic apparatus | |
| WO2014183420A1 (en) | Array substrate, manufacturing method of same, and display panel | |
| TW567383B (en) | Liquid crystal display | |
| CN110928009A (en) | Liquid crystal display panel | |
| KR101298610B1 (en) | Liquide crystal display device and method for fabricating the same | |
| CN108535927A (en) | Liquid crystal display panel and its manufacturing method | |
| CN100454556C (en) | Repairing structure and active component array substrate | |
| CN101482661B (en) | Weld pad structure and LCD panel including the same | |
| CN102768432A (en) | Color filter array substrate and manufacturing method thereof | |
| CN111129029B (en) | Array substrate, display panel and manufacturing method of array substrate | |
| CN114185190A (en) | Array substrate, display panel and display device | |
| CN100585879C (en) | Thin film diode,dual scan diode array substrate and liquid crystal display panel | |
| JPH1195255A (en) | Array substrate of liquid crystal display device and liquid crystal display device having this substrate | |
| KR20020016676A (en) | Method for fabricating liquid crystal display panel | |
| WO2023230977A1 (en) | Wiring substrate and manufacturing method therefor, light-emitting substrate, and display apparatus | |
| EP4287255A1 (en) | Display device, method of manufacturing the same, and tiled display device including the same | |
| TWI388044B (en) | Bonding pad structure and liquid crystal display panel | |
| KR100840253B1 (en) | Liquid crystal display apparatus and method for manufacturing thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180822 Address after: 1# third, fourth floor, No. 6, Ru Jiang West Road, Mawei District, Fuzhou City, Fujian Province Co-patentee after: Chunghwa Picture Tubes Ltd. Patentee after: CPT DISPLAY TECHNOLOGY (SHENZHEN)CO., LTD. Address before: 350015 Mawei Technology Park, Fuzhou, Fuzhou, Fujian Co-patentee before: Chunghwa Picture Tubes Ltd. Patentee before: Fujian Huaying Display Technology Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101201 Termination date: 20200224 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |