CN101479931A - Radiation detector - Google Patents

Radiation detector Download PDF

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Publication number
CN101479931A
CN101479931A CNA2007800240408A CN200780024040A CN101479931A CN 101479931 A CN101479931 A CN 101479931A CN A2007800240408 A CNA2007800240408 A CN A2007800240408A CN 200780024040 A CN200780024040 A CN 200780024040A CN 101479931 A CN101479931 A CN 101479931A
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Prior art keywords
detector
signal
local oscillator
filter
frequency
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C·M·曼
D·J·库姆布斯
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Thruvision Ltd
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Thruvision Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
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    • H01L2924/01Chemical elements
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode
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    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
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    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Abstract

In a terahertz radiation detection system, such as a terahertz camera, an array of feedhorns feeds detected radiation through waveguides to diode-based mixers for mixing with a local oscillator to produce modulated intermediate frequency (''IF'') signals that can be amplified and used in imaging. The mixers are accommodated on the surface of a substrate and multiple substrates can be layered up to support a two-dimensional array of hordhorns. In order to improve the assembly density, the resolution of the camera may be accordingly improved, the IF wave filter used for extracting modulated signals is accommodated in the through hole of the substrate. In addition, stub tuner co-working with the signal transmission portion of the microstrip is provided as to improve the coupling of the detected radiation and oscillator signals of this machine to the mixer. Although the stub tuner is common to the detected radiation and oscillator signals of this machine in each mixer, the adding of the microstrip facilitate the separate and optimal regulation to the detected radiation and oscillator signals of this machine.

Description

Radiation detector
Technical field
The present invention relates to a kind ofly be used to use wave-length coverage centimetre coming the radiation detector of inspected object to the electromagnetic spectrum between the submillimeter.
Background technology
Embodiments of the invention are relevant to the terahertz section with the microwave of electromagnetic spectrum.Yet the terahertz end is for providing high-resolution many application advantageous particularlies in mini system, and the specific embodiment of the present invention that describes below is operated in the terahertz section.Herein " terahertz " expression wave-length coverage at millimeter to the electromagnetic spectrum between the submillimeter.
Adopt the device of local oscillator comprise for example superhet, heterodyne, homodyne or directly IF (intermediate frequency) detect and the use of the direct amplification that is used to detect, wherein amplifier is configured to regeneration type or self-oscillation frequency mixer.Embodiments of the invention are particularly suitable for using with superhet and heterodyne harmonic mixer, and even are more suitable for using with the balance harmonic mixer of sub-harmonic mixer and so on.
(in wave-length coverage centimetre was being checked to the heterodyne between the submillimeter, local oscillator was with respect to the input signal generation frequency displacement that will detect, and it has identical frequency in homodyne detection).
Above-mentioned scope is commonly referred to as the terahertz frequency spectrum herein.Have found that terahertz radiation is very useful instrument concerning imaging and other purposes, this be because the material of not transmission visible spectrum to its transmission.This allows these materials can not utilize visible radiation to see their place, utilizes terahertz radiation it " can be understood thoroughly ".For example, terahertz wavelengths has been used to pass atmosphere to earth surface imaging and be used to improve visibility under the bad weather (for example be used for flight or drive).Because the transmissivity or the reflectivity difference of some material, so they can be distinguished under terahertz radiation, and this has been used in the detection of food for example or chemical composition.In addition, the object itself that comprises human body can be launched terahertz radiation.This has been used in the medical science that for example is used for the detection of skin cancer.Because clothes is transparent for terahertz radiation generally, but weapon is not transparent, so Another application is to detect to be hidden in human body weapon on every side in a different manner.
It is known using terahertz (THz) frequency spectrum to come the camera to object image-forming.For example, in the International Patent Application WO 2004038854 with the name of Agence Spatiale Europeenne a kind of device has been described.In this device, camera based is in the double horn antenna that picks up terahertz radiation respectively, and in use, terahertz radiation is directed in the mixer channel to use local oscillator to extract intermediate-freuqncy signal.This known heterodyne technology allows at room temperature to use than the littler detector of the necessary detector of other mode in terahertz range, and therefore supports The better resolution.
The detector of WO2004038854 adopts a pair of substrate to construct, and for each detector, this is patterned (pattern) at least one substrate in the substrate, to hold antenna, mixer channel and the through hole that arrives signal output part by substrate.Waveguiding structure is coupled to mixer channel to transmit signal from local oscillator.Therefore and protected in final camera, these two substrates are placed face-to-face with the form of sandwich, make the pattern structure hold detector arrangement be between the substrate and.
Summary of the invention
According to the first aspect of the embodiment of the invention, a kind of electromagnetic radiation detector is provided, comprising:
I) at least one substrate;
Ii) be used to receive the radio frequency input of radiofrequency signal that will be detected;
Iii) be used to receive the local oscillator input of local oscillator signal;
Iv) frequency mixer, this frequency mixer be by described substrate supports, and be coupled with described radio frequency input and local oscillator input, is used for producing intermediate-freuqncy signal by radiofrequency signal and the local oscillator signal mixing that will be received; And
V) filter channel, be used for being controlled at described detector radiofrequency signal path (passage) and be used to extract intermediate-freuqncy signal, wherein said substrate is equipped with the aperture, and this aperture has the axis direction that extends in the substrate, and is contained in the described aperture to the small part filter channel.
For example, this substrate can have first and second apparent surfaces, and this aperture can be extended or can extend through second surface from first surface towards second surface from first surface.This frequency mixer and optional radio frequency input and local oscillator input can be supported by described first surface separately easily, and the described output signal that in use can transmit described frequency mixer to the small part filter channel.
In radiation detector based on frequency mixer, can provide a kind of filter channel as everyone knows, this filter channel at first can be blocked the path of radio frequency so that the transmission path of the radiation signal that is received in the control detection device, and secondly this filter channel can extract intermediate-freuqncy signal so that IF output used in for example imaging to be provided.The form known that is operated in the filter channel of radio frequency is configured to flat element, the physical size of this flat element provides filtering action and this flat element to be installed in easily on the surface of substrate, wherein this substrate is also supported described frequency mixer and radiofrequency signal input path thereof, because this provides convenience for making.In an embodiment of the present invention, have recognized that and to extend into or to pass described substrate rather than in the passage of the surface arrangement of described substrate, to carry out some filtering at least, and this can provide remarkable advantage with regard to the packaging density of the detector relevant with described substrate, thereby has improved the resolution of whole detection or imaging capability.
Be used in the known arrangement of RF and IF frequency field filter filtering passage, filter channel is constructed to for example pattern metalization on quartzy carrier (patternedmetallisation), and described quartzy carrier is installed in again on the described substrate surface.Undoubtedly, this is relatively easy the manufacturing as single planar configuration.Yet, have recognized that filtering carries out the task more than, for example stop radio frequency in detector inappropriate propagation and from the mixed product in mixing chamber, extract intermediate frequency (IF) signal sending IF output to, and recognize that the physique that separately is used to carry out these two tasks has tangible benefit.The physique that extracts the IF signal from mixed product that is used for carrying out second task has relatively low frequency passband, and physical size is often relatively large.This physique is usually located at the position towards the IF of monitor output in the parts sequence of detector is provided.In a preferred embodiment of the invention, filter channel extends into or the part by described substrate provides the filter configuration with low frequency pass band.For example this passband can be from 0.1GHz to 60GHz.
Although can provide filter configuration as the metallization on the carrier with low frequency pass band, and the filter configuration in the passage can be received in the described substrate, but the special embodiment easily of the present invention is provided as the coaxial pin of abnormity (profiled) that is roughly cylinder form with this IF pass filter structure.The profile of this pin can provide filtering to move necessary physical size with the similar mode of form metalization on the carrier.This pin can be contained in the through hole of circular cross-section for example expediently, directs in the substrate and by for example holing and constructs.In addition, to recognize that special-shaped pin helps to install by the lasso that use is installed in this through hole, wherein this through hole also is used to provide sealing IF output.Preferably, this through hole is equipped with the step-like variation of cross section in the position along its length, to provide at least one in abutting connection with (abutment) surface, and can be against the fixing described lasso of this abutment surface.
The filter of known forms is 1/4 wavelength filter, and it can be provided as the change in size with respect to 1/4 wavelength interval of filtered electromagnetic radiation.By the vary in diameter of using 1/4 wavelength interval special-shaped pin being configured to 1/4 wavelength filter is easily.This filter can be installed in the substantial cylindrical cross section of through hole then.The conductive coating on pin and the through hole and the insulating material of pin can provide coaxial filter together.
The structure of the suitable common version of Shi Yonging is the known technology of microstrip patterning on the substrate in embodiments of the present invention.Microstrip is the transmission line form that is used to transmit high-frequency signal, and generally includes the thin smooth electric conductor that is separated by insulating barrier or air gap and ground level.They are used as the form of printed circuit design, and this printed circuit design is used for coming the route high-frequency signal with minimum signal loss, and this loss is by radiation-induced.Still making more complicated similar techniques applicable to embodiments of the invention equally uses strip line and electric conductor with two ground levels to be sandwiched between two corresponding insulation layers or the air gap.By patterning optionally, microstrip and strip line can also be used to that electromagnetic wave is sent to the space and receive electromagnetic wave from the space, and are used to provide rf filtering.In an embodiment of the present invention, be used for the input of receiving electromagnetic radiation detection signal and be used for one or two input of the input of local oscillator signal can be thus by merging antenna, providing to the connection of frequency mixer and the microstrip or the strip-line circuit of radio-frequency filter.
According to the second aspect of the embodiment of the invention, a kind of electromagnetic radiation detector is provided, comprising:
I) be used to receive the radio frequency input of radiofrequency signal that will be detected;
Ii) be used for the local oscillator input of received RF local oscillator signal;
Iii) be connected to this radio frequency input and be connected to the frequency mixer that this local oscillator is imported, this frequency mixer is used for producing intermediate-freuqncy signal by radiofrequency signal that will be received and described local oscillator signal mixing; And
Iv) be used to extract the intermediate-frequency filter of described intermediate-freuqncy signal,
The electrical connection that is used for described intermediate-freuqncy signal is sent to from frequency mixer this filter wherein is provided, the length of this connection is selected as making the electric loading and the radio-frequency radiation mismatch of propagating of filter performance in detector, make this filter show as open circuit at least basically to radio-frequency radiation in the use of detector.
The embodiment of second aspect present invention relates in particular to the local oscillator input and/or radio frequency is imported the quilt transmission line of section construction one-tenth such as microstrip at least.
Preferably, electrical connection is connected with the local oscillator input, because this provides the good locations of intermediate frequency output of detector.
In the use of detector, radio frequency input and local oscillator are imported each and may be comprised at least one electric conductor, and the length of each described electric conductor is preferably the wavelength that is significantly less than intermediate-freuqncy signal.Can under not considering, select the length of these conductors like this to the situation of any effect of intermediate-freuqncy signal.For example, in the use of detector, the length of each described electric conductor is preferably and is no more than 1/10 of intermediate-freuqncy signal wavelength.
According to the third aspect of the embodiment of the invention, a kind of electromagnetic radiation detector is provided, comprising:
I) be used to receive the radio frequency input of radiofrequency signal that will be detected;
Ii) be used for the local oscillator input of received RF local oscillator signal;
Iii) import the frequency mixer of coupling with described radio frequency input and described local oscillator, this frequency mixer is used for carrying out mixing by radiofrequency signal that will be received and local oscillator signal and produces intermediate-freuqncy signal; And
Iv) be used to extract the intermediate-frequency filter of described intermediate-freuqncy signal;
Wherein this frequency mixer is by corresponding transmission line and input of described local oscillator and described radio frequency input coupling, and this detector also comprises the stub tuner (stub tuner) of the transmission line that is connected to the radio frequency input, in use the length of this stub tuner and described transmission line together with selected with the described local oscillator signal of optimization and the coupling of frequency mixer, and the length of stub tuner will be selected as the radiofrequency signal that is received shown in the middle of effective impedance (intermediate virtual impedance).
In embodiment according to a third aspect of the invention we, a stub tuner can come the performance of optimized detection device from many aspects.For example, in the detector based on sub-harmonic mixer, the length of stub tuner can be selected as appearing as (present) and be equivalent to less than half of described local oscillator signal wavelength and greater than the distance of the radiofrequency signal wavelength that is received half (but less than whole wavelength).Can select the length of transmission line of described radio frequency input and local oscillator input then, make stub tuner show as near imaginary short and to the radiofrequency signal that is received and show as middle effective impedance local oscillator signal.Because the position that it is connected with the transmission line of described radio frequency input, this stub tuner can play the input of optimization radio frequency and local oscillator is imported both effects to the coupling of described frequency mixer.
In the convenient form of clamp according to the structure of the detector of the embodiment of the invention third aspect, frequency mixer is by main substrate supports, and this main substrate has conductive surface, and the end of described stub tuner is connected to described conductive surface.Radio frequency input, local oscillator input and frequency mixer can all be installed on time substrate, and described time substrate is supported by main substrate again.For example, this time substrate can carry as two inputs that are connected to the printed circuit of frequency mixer.Same in the detector according to embodiment of the invention first aspect, main substrate can be equipped with the aperture by wherein, and intermediate-frequency filter is installed in this aperture.
Should be appreciated that, any feature of describing about any one embodiment can be used separately, perhaps be used in combination, and can be used in combination, perhaps be used in combination with any combination of other any embodiment with one or more features of any other embodiment with other features of describing.
Description of drawings
Description only as example, is described the radiation detector as the THz of the embodiment of the invention, wherein:
Fig. 1 shows the schematic diagram of the detector in the use;
Fig. 2 schematically shows the plane graph of presenting the part-structure of one group of detector that output provides with IF together with the local oscillator of detector;
Fig. 3 shows the plane graph of the mixing part of the detector in this group detector shown in Fig. 2;
Fig. 4 shows the plane graph based on the filter part of quartz of the mixing part of Fig. 3;
Fig. 5 a shows the edge observed with the direction shown in the arrow vertical cross-section diagram by line " A-A " intercepting of the part of the mixing shown in Fig. 3;
Fig. 5 b shows the edge observed with direction shown in the arrow vertical cross-section diagram by line " B-B " intercepting of the part of the mixing shown in Fig. 3;
Fig. 6,7 and 8 show with the intermediate frequency output pin of the part of the mixing shown in Fig. 3 use and the modification of sealing;
Fig. 9 shows the biasing of watching from below " T " circuit that uses with the part of the mixing shown in Fig. 3;
Figure 10 show according to embodiment of the invention structure be used to receive input RF radiation and send it double detection horn antenna of mixing partial array shown in Figure 3 to;
Figure 11 shows and is used in the double detection horn antenna to hold the replaceable substrate arrangement of IF output;
Figure 12 shows can be at Fig. 6, the Low ESR and the high impedance part of the 1/4 wavelength filter structure that uses during 7 and 8 output pin is arranged; And
Figure 13 shows Fig. 6, the cross section of the preferred version of pin shown in 7 and 8 and sealing arrangement.
Should be noted that these accompanying drawing neither ones draw in proportion, these accompanying drawings only are schematic.Identical Reference numeral is used for representing the same section of different accompanying drawings.
Embodiment
With reference to figure 1, detector generally includes mixing unit 100 and is used for the amplifier section 105 of the IF output 150 of mixing unit 100.This amplifier section 105 also provides analog to digital converter (ADC) 140.By receiving horn antenna 115, be input to terahertz radiation (" RF signal ") 110 frequency mixers 120 that are fed to based on diode of mixing unit 100 from visual field (field of view), and carry out mixing with reference signal (" LO signal ") 145, this reference signal is provided by local oscillator (LO) 125.
Frequency mixer 120 has merged the non-linear element such as a pair of Xiao Jite diode, and this frequency mixer the RF signal that received 110 and 145 combinations of LO signal are comprised intermediate frequency (IF) signal 150 with generation with signal and difference signal.IF signal 150 is lower with respect to RF radiation 110 that is received and LO signal 145 common frequencies, and its relation is:
IF signal 150 is typically 0.1-40GHz
RF radiation signal 110 is typically 200-10000GHz
LO signal 145 is typically 100-10000GHz
Because IF signal 150 is low frequencies, therefore it is easy to be exaggerated, and this IF signal can be by rectification to produce voltage if desired, and this voltage is directly proportional with the RF signal 110 that is received on intensity, and this voltage can be used to form the image relevant with the visual field subsequently.
Although be called as the LO signal here, should be appreciated that this LO signal 145 can also be a radiofrequency signal, and term " radio frequency " also comprises the signal than low side of frequency in the frequency range of LO signal 145, unless illustrate in addition in the context.
Horn antenna/frequency mixer array
With reference to figure 2, the part that in fact horn antenna 115 and frequency mixer 120 can be used as the horn antenna array is fabricated on the shared main substrate 210, and each horn antenna has its oneself frequency mixer.A local oscillator (not shown in Figure 2) can provide LO signal 145 for several frequency mixers 120 along individual path 205.In substrate 210, along the path 205 that provides away from the direction of horn antenna 115 from the IF output of each frequency mixer.
The ordinary construction of the array shown in Fig. 2 can pass to the epitaxy described in the International Patent Application WO 2004038854 of name application of Agence Spatiale Europeenne and make.That is to say, form three-decker, intermediate layer just two faces of common substrate 210 is etched, and the upper and lower all only have one side etched with the form of complementation.Fig. 2 only illustrates the plane graph in the intermediate layer of this structure, and not shown the upper and lower.When making the upper and lower and intermediate layer (two arrays of horn antenna 115) registration, the frequency mixer 120 that is used for the LO signal and the position of input channel 205 have been formed.The frequency mixer 120 of (housing) detector and the zone of input and output thereof are specifically held in dotted line " M " expression.
In fact, the quantity of layer rises to required any amount, supports the wide region design of horn antenna array, carries out etching as long as satisfy the surface of layer with necessary complementary type.Also further describe below with reference to Figure 10 and 11.
The material of any one deck of these three layers of substrates for example can be semiconductor or the metal such as silicon, as long as this surperficial material has high conductivity.For example, available gold or silver come metallised silicon layer.The replaceable method that forms complementary patternsization is machining rather than etching.
Signal input and output: single frequency mixer 120
With reference to figure 3, the zone " M " that holds frequency mixer 120 comprises the end of the waveguide 300 that transmits input rf signal 110 and the end of second waveguide 345 that transmits local oscillator signal 145 in more detail.Extend in the shallow passage 305 that has between these two waveguide end 300,345, this shallow passage 305 holds gold-plated quartz substrate 315.With the gold plate patterning of quartz substrate 315 to provide:
● two antennas 320,335, arbitrary end of substrate 310 respectively has an antenna, its be used to be coupled RF signal 110 and LO signal 145 from waveguide end 300,345
● to the support of diode chip for backlight unit 310 be connected, this diode chip for backlight unit is used for corresponding RF signal 110 and LO signal 145 that antenna transmits are carried out mixing
● high frequency filter 314 (" RF filter "), further propagate with blocking-up input rf signal 110.
These forms of antenna 320,335 and high frequency filter 314 are known, therefore do not describe in detail here.Each can adopt other known forms.
The filter channel relevant with frequency mixer 120 comprises above-mentioned high frequency filter 314 and IF output filter 350.IF output signal 150 from diode chip for backlight unit 310 is picked up (pick off) by a pair of electric wire connecting junction 325 from the end of the microstrip antenna 335 of transmission LO signal 145, and this IF output signal is transmitted to IF output filter 350.The form of IF output filter 350 is special-shaped pins, this IF output filter is installed is made its longitudinal axis extend in the common substrate 210 by through hole 340.Therefore, the longitudinal axis of output filter 350 is both transverse to the plane of the quartz substrate 315 of (transverse to) carrying antenna 320,335 and diode chip for backlight unit 310, again transverse to the surface of the common substrate 210 that supports quartz substrate 315.This orientation of IF output filter 350 allows frequency mixer 120 to pile up (packing) relatively closely on common substrate 210, and has therefore improved the resolution of gained image potentially.
Be not directly installed on the shared main substrate 210 although should be noted that diode chip for backlight unit 310, main substrate 210 supports diode chip for backlight unit 310 by (inferior) quartz substrate 315 of inserting.
At shared main substrate 210 itself is not under the situation of metal material, and common substrate 210 and two waveguides 300 and 345 are metallized on surface shown in Figure 3 and ground connection (earthed).Metallization comprises that the electrogilding of at least one micron thickness or other have the high conductive material of similar corrosion-resistant material character.The surface of IF output through hole 340 is metallized equally.Below will be about further describing metallization with in embodiments of the present invention stub tuner and about the performance of IF output filter 350.
With reference to figure 4, the thickness of gold-plated inferior quartz substrate 315 is about 75 microns.Its width " W " is about 350 microns, and length " L " is about 2.5 millimeters.Adopt the known manner of vacuum moulding machine and photolithographic techniques to come the coated with gold coating, be formed for from RF waveguide 300 pick up input rf signal 110 RF antenna 320, be used for picking up the LO antenna 335 of LO signal 145 and being used to block the RF filter 314 that input rf signal 110 arrives LO antennas 335 from LO waveguide 345.
In addition with reference to figure 3, diode chip for backlight unit 310 at first is installed between the RF antenna 320 and RF filter 400 on the gold-plated quartz substrate 315.The RF antenna is equipped with horizontal " T bar " 405 in its end, part is used for this purpose.Employing standard solder technology is installed diode chip for backlight unit 310, so that be electrically connected with RF antenna 320 and RF filter 400.Then by using ultraviolet ray (UV) cured epoxy material will comprise that the assembly of diode chip for backlight unit 310 and gold-plated quartz substrate 315 is installed in the shallow passage 305 of common substrate 210 such as Norland 61 (registered trade mark of Norland Products Inc.).
With reference to the cross section shown in the figure 5a, as can be seen, diode chip for backlight unit 310 carries out bridge joint with the end of RF antenna 320 and the gap between the RF filter 400, and power path is provided between the two.Therefore the RF signal 110 of input and LO signal 145 all are sent to the diode (not shown) on the diode chip for backlight unit 310.Diode chip for backlight unit 310 in the use can carry out mixing with the RF signal 110 and the LO signal 145 of input, with the IF signal 150 that is formed for detecting.Such diode chip for backlight unit is known, for example discusses in common unsettled UK Patent Application GB0603193.4, and this patent application discloses a kind of use of the non-linear frequency mixing element that comprises a pair of Xiao Jite diode of inverse parallel configuration.Be described in the suitable diode open file below of Shi Yonging in an embodiment of the present invention: the 20th volume the 19th phase the 787th page " GlassReinforced GaAs Beam Lead Schottky Diode with Airbridge forMillimetre Wavelengths " of Electronics Letters of delivering on September 13rd, 1984.
The IF filter
With reference to figure 3 and 5b, common substrate 210 has the through hole 340 that passes its formation, holds IF output filter pin 350 in this through hole 340.IF output pin 350 is supported in position by glass support pearl (bead) 330.Pin 350 itself is processed by beallon and is gold-plated, is attached on the center conductor 510 of this bead 330 by carrying a silver epoxy 525 then.The bead that being suitable between connector and microcircuit is provided for the sealed feed-through of shell wall is provided by the manufacturer such as Anritsu company.Pearl 330 has the outer conductor 515 that is in coaxial configuration with center conductor 510 conversely, and uses the welding material 520 based on indium to be fixed to through hole 340.Outer conductor 515 is by the metallization ground connection in the through hole 340.
Pin 350 and the glass support pearl 330 with its center conductor 510 have three functions at least:
● form the profile of the cross section of pin 350 according to principles well-known, with only by IF output signal 150 from diode chip for backlight unit 310, blocking-up LO signal 145 and RF signal 110
center conductor 510 of pearl 330 and pin 350 gold-plated can be used for transmitting bias current or voltage is given diode chip for backlight unit 310
● bead 330 provides sealing around IF output, thereby has protected the environment in the zone " M " that holds frequency mixer 120 in the final products.
With reference to figure 6,7 and 8, pin 350 and support pearl 330 can be arranged more than a kind of mode.Fig. 6 shows the cross section with reference to the above-mentioned layout of figure 5b.Fig. 7 shows bead 330 not to be had the outer conductor of oneself but uses UV cured epoxy resin material 700 to be installed in layout in the metallized through hole 340.This layout is avoided using welding and thereby has been simplified manufacturing.Fig. 8 shows different slightly layouts, at first reuse in this arrangement and carry a silver epoxy 525 pin 350 is attached on the center conductor 510, then by using UV cured epoxy resin material 805 that the two all is installed in the quartzy lasso (quartz ferrule) 800.Quartzy lasso 800 is also by using UV cured epoxy resin material 810 to be installed in the through hole 340.
With reference to Figure 12, the basic principle of profile of cross section that forms pin 350 is for example by GMatthaei, the SBN 0-89006-099-1 that L Young and EMT Jones write " MicrowaveFilters; Impedance Matching Networks and Coupling Structures " and by McGraw Book company, Niu Yue ﹠amp; London, " Very HighFrequency Techniques " II that nineteen forty-seven publishes rolls up description to some extent in the 668th page.Generally speaking, such coaxial filter be used many year and their design by known and in the list of references that provides, explain to some extent.Their basic operation is depended on the diameter of comparing with the c-axial channel 1215 with electrically conductive inner surface with the columniform division center 1210 of being roughly of conductive outer surface based on the alternating segments of high or low impedance.At Fig. 6, in the layout shown in 7 and 8, division center 1210 is by pin 350 expressions, and passage is by through hole 340 expressions that pin 350 wherein is installed.Division center 1210 and c-axial channel 1215 provide wherein " 1/4 wavelength filter " of high impedance part 1220 and Low ESR part 1225 series connection cascades together.Each part 1220 and 1225 length are about λ/4, and wherein λ is an electromagnetic wavelength in the coaxial line.Therefore, use term " 1/4 wavelength filter " here.In Figure 12, the high impedance part 1220 with small diameter portion of division center 1210 is illustrated Low ESR part 1225 cascades than major diameter part of having with division center 1210.In high impedance part 1220, the diameter 1200 of division center 1210 is minimized.In Low ESR part 1225, the space 1205 between division center 1210 and the passage 1215 is minimized.In order to realize bigger inhibition, perhaps increase the quantity of cascade part 1220,1225, such shortcoming is to have increased the insertion loss, perhaps reduces the diameter 1200 and/or the described space 1205 of division center 1210, such shortcoming is to make structure difficult more.
In embodiments of the invention shown in Fig. 6,7 and 8 for example, the length of whole pin 350 is two λ/4 distances with respect to the IF signal, and the profile of the pin 350 in each λ/4 parts becomes step-like, rather than it is level and smooth, make pin 350 have two " ribs " 710 and 715 around it, one of these two ribs greater than another.Should the clearer demonstration of structure quilt in Figure 13.The purpose of this structure is to be minimized in the pattern of not expecting that produces in a λ/4 parts that have than riblet 710, reduces the mechanical requirement of making as much as possible by increasing size with the 2nd λ/4 part correlations of pin 350 substantially simultaneously.
With reference to figure 7 and 13, appearance for the not desired pattern that reduces to propagate by coaxial filter mount structure, importantly the inlet of the filter of high frequency local oscillator one side has little size, and the diameter that should enter the mouth is less than λ/4 (" λ/4 ") about the local oscillator wavelength typically.(" inlet of filter " is the first that is attached to the pin 350 of electric wire connecting junction 325.Yet), if the diameter of pin 350 is reduced to λ/4 about the local oscillator wavelength in this zone, can bring conflict between the optimum operation of the requirement of robust structure physically and filter like this from suppressing angle.The wavelength of local oscillator is much smaller than the wavelength of IF signal 150, so pin 350 is had to very little at the diameter of filter porch.In order to alleviate this problem, pin 350 has " rib " 710 at the profile of its λ/4 parts, and the internal diameter of through hole 340 narrows down so that the neck 705 of very close rib 710 to be provided in this part simultaneously.The neck 705 of through hole 340 and the space between the rib 710 on the pin 350 are reduced to minimum feasible, and this provides the filter porch desired small size, keep the diameter of pin 350 to be in the size of the λ/4 easier manufacturings than local oscillator wavelength simultaneously.Compare with structure shown in Figure 8 with Fig. 6, this structure of introducing neck 705 in through hole 340 makes process requirements more complicated, but has provided the optimum filter response that combines with the rigidity of structure.
Pin 350 has the 2nd λ/4 parts that have bigger second rib 715.Here, size generally speaking is not crucial, and the space between through hole 340 and the second rib 715 is bigger, and second rib 715 itself can be greater than the first rib on the pin 350 710 simultaneously.Can before local oscillator signal arrives the 2nd λ/4 parts, realize to local oscillator signal up to 10dB ↓ inhibition, in the 2nd λ/4 parts, will not have mode producing like this.Adopt the through hole 340 of increase usually and the size of pin 350 the 2nd λ/4 parts to reduce manufacture difficulty and kept mechanical strength.
With reference to Figure 13, in the modification of layout shown in Figure 7, pin 350 is constant, but 340 cross section is more complicated.Comprise the inlet of filter of neck 705 of through hole 340 and a λ/4 parts of this filter, identical with scheme shown in Figure 7.Inner surface at the through hole 340 of the 2nd λ/4 parts of this filter is more complicated.In scheme shown in Figure 7, has through hole 340, this through hole 340 only is another surperficial cylindrical hole of 210 from neck 705 to substrate, and in scheme shown in Figure 13, the inner surface of through hole 340 has diameter still less than the step-like profile of glass support pearl 330.On glass support pearl 330, on the inner surface of through hole 340, there is other step, this step is that the flange (shoulder) of glass support pearl 330 provides abutment surface 1300.This layout helps to assemble this filter, this be because pin 350 can at first be installed on the center conductor 510 of bead 330, then in through hole 340 against abutment surface 1300 positioning beads 330.
Here it should be noted that the end of the center conductor 510 of bead 330 can reach in the pin 350 slightly, so also may more accurately the pin in the through hole 340 350 be aimed at, and the installation mechanicalness of pin 350 is more stable.
With reference to figure 3, comprise that a key element in the performance of IF filter of pin 350 and through hole 340 is the transmission of IF signal to pin 350.This can finish by couple of conductor 325, and the character of these leads 325 is to further describe in the part of " stub tuner " with title below.
The IF of filtering output
With reference to figure 5b and 9, the IF of the frequency mixer that is transported by center conductor 510 output transmits by golden closing line (gold bond wire) 500 and biasing transfer circuit (bias delivery circuit) 500, for example is used for using in imaging.This biasing transfer circuit 500 is transparent for IF output signal 150, so this IF output signal 150 is sent to amplification and imaging device by it.The intensity of biasing transfer circuit 500 is that it can be used for giving diode chip for backlight unit 310 along " another direction " transmission direct current (" DC ") bias voltage or electric current.
In more detail, this biasing transfer circuit 500 comprises that the power transmission line that is used to carry across the IF signal 150 of circuit 500 connects 900 alumina substrate 505.Generally speaking, the effect of biasing transfer circuit 500 is known types, is not described in detail here.DC block-condenser 905 is provided in power transmission line 900, this capacitor 905 blocking-up DC offset signals, and be transparent to IF output signal 150.Biased electrical sensor 910 is connected to power transmission line 900 with the T-shape configuration, is used to transmit the DC offset signal and blocks IF signal 150.The DC offset signal is transferred to the center conductor 510 of bead 330 by golden closing line 500, so that be transferred to diode chip for backlight unit 310 forward.
Biasing transfer circuit 500 is made according to the industrial standard assembly program.Capacitor 905 can for example be provided by the company such as Presidio Components company, and inductor 910 is provided by the company such as Piconics company.
Stub tuning
As during great majority detect, the importance of the embodiment of the invention is the signal to noise ratio of the signal that detected.The known power that improves such as the significant point that is input to load by the employing stub tuner is coupled the performance of improvement at the equipment of radio frequency.Stub tuner can be provided as the short circuit or the open circuit length (shorted or open circuit lengths of transmissionline) of power transmission line, and its attachment point at them produces net resistance.Can form any reactance value by length from zero change, but each stub tuner can only effectively be worked with a frequency to half-wavelength with stub tuner.Also know, for the frequency spectrum of widening the effective work of equipment can adopt more than one stub tuner.
In more detail, with reference to figure 3 and 5b, the corresponding complex impedance of load request between load and microwave power transfer member that microwave power is coupled to such as the diode of diode chip for backlight unit 310 mates.In the above-described embodiments, exist for two power transfer members that the circuit that comprises diode chip for backlight unit 310 transmits microwave power, these parts are the waveguides 300 and 345 that transmit RF signal 110 and LO signal 145 respectively.
The condensance impedance of realization such as diode chip for backlight unit 310 (reactive impedance) and be that extra power transmission line element is inserted in the circuit such as the known method of the impedance matching between the true impedance of RF and LO waveguide 300,345, with the behavior of " tuning " circuit, thereby provide correct phase shift (right shift in phase), with the reactance of compensation diode.Yet because the impedance of the diode in the diode chip for backlight unit 310 has phase place and amplitude components, therefore the position and the size of coupling transmission of electricity element all influence the result.
In an embodiment of the present invention, RF and LO signal 110,145 are finished by microstrip antenna 320,335 to diode chip for backlight unit 310 transmission own.The gold plating and the diode chip for backlight unit 310 of all patternings on antenna 320,335, the quartz substrate 315 constitute mixer together.In the situation of the microstrip circuit that is used for handling high-frequency signal, many stub tuners are known, and it is realized the position with the form that is inserted into one or more power transmission lines in the circuit or " short-term " and inserts and regulate.Can use a plurality of power transmission line stub tuners to increase the bandwidth of mixer " coupling ".
In an embodiment of the present invention, recognize that stub tuner can provide with the form of lead 355,325, and they can carry out a plurality of tasks.Provide two golden closing lines 355 that are attached to RF signal microstrip antenna 320 ends, and two other golden closing line 325 is used to pick up the IF signal of end of LO signal microstrip antenna 335 so that be sent to output pin 350.First pair of golden closing line 355 only is used for stub tuning, and second pair of lead 325 has a plurality of roles, and this is because their effect is as follows:
● help effect with respect to LO signal demodulation (tune out) IF circuit
● form the mechanical interface of robust from the circuit on the quartz substrate 315 to IF pin 350
● IF output signal 150 is sent to pin 350.
(" IF circuit " will be further described below.)
In the wave-length coverage of the radiation that will be coupled, the design of present any tuning stub is very important for optimally mating all incident powers that enter in the mixer diode.A factor is the short-term length relevant with wave-length coverage, this means that single stub tuner will only work on very narrow bandwidth well.Therefore well-knownly be to use stub tuner to increase bandwidth of operation more than one.In an embodiment of the present invention, find that the whole performance of using the element of playing the part of secondary part in tuning in the detector Already in to improve detector is possible and is suitable by selecting suitable size.
The definite length of the tuning stub that exists in the embodiment of the invention is subjected to the influence of the type of the Xiao Jite diode of use in the diode chip for backlight unit 310, because this has influenced the load that diode chip for backlight unit 310 is presented.Their affected accurate ways are complicated and are difficult to calculate, therefore the best length of selecting tuning short-term by rule of thumb for any one embodiment.Transmit and minimize the noise that is produced by maximum signal power and find optimal placement.Acceptable accurate balance also can change, and this depends on the characteristic of miscellaneous part in the system, as filtering and available signal power level.
With reference to figure 3, there are two Coupling points, be coupled in the load at this Coupling point place radio-frequency power, and this carries out arbitrary end place of mixing at the transmission RF of diode chip for backlight unit 310 signal 110 and LO signal 145.The frequency of these signals is respectively 120-130GHz and 220-280GHz.In order to be coupled to from all power of each antenna 320,335 in the diode chip for backlight unit 310, importantly the corresponding signal potential routing table forward that leaves the relative antenna of diode chip for backlight unit 310 whereabouts reveals open circuit.This can adopt the mode that describes below to realize very satisfactorily.
Here it should be noted that when the length of tuner increased a wavelength " λ " with respect to its signal of just handling, the tuning behavior of stub tuner repeated.Therefore, if find that the suitable length of the tuner of realization certain effects is 1/4 λ, the length for 11/4 λ can realize similar behavior so.Yet (, if power transmission line dissipates, so because the Ohmic resistance and the bandwidth constraints of the extra length of power transmission line, the loss meeting increases.) this means a stub tuner can be used for having with many different wavestrips in the not same-action of signal correction, and needn't just in time be the wavestrip with subharmonic relation, this is because can regulate length presenting the suitable part of wavelength in each case, and no matter this length also comprises integer the wavelength relevant with one or two wavestrip.
In the layout of Fig. 3, the whole preferred path of signal is:
1.LO signal 145 is sent to diode chip for backlight unit 310 and no longer further transmits (" LO circuit ") from LO waveguide 345
2.RF signal 110 is sent to diode chip for backlight unit 310 and no longer further transmits (" RF circuit ") from RF waveguide 300
3. the LO/RF signal of mixing is sent to IF output pin 350 (" IF circuit ") from diode chip for backlight unit 310
Equally also wish to adopt stub tuning to come the performance of tuning circuit by rule of thumb.
These desirable signal paths and tuningly realize according to following mode:
1, LO circuit
Make described free ending grounding by the metalized surface that ultrasonically free end of two closing lines 335 is joined to frequency mixer substrate 210.The point that each closing line combines with substrate 210 forms the physics short circuit on the radio frequency, and this short circuit is locked as short circuit with the behavior of LO and RF circuit effectively on this physical points.Every other then length is all with respect to this position.With regard to phase place and amplitude, be such.Owing to be physics short circuit rather than imaginary short, so this short circuit is that RF and LO frequency are common.
For this embodiment, the length of closing line 355 " S " is 1039 microns, is approximately 3/8 λ under the LO frequency, therefore can not provide desirable imaginary short on diode.If their length is 1/2 λ, then can on diode chip for backlight unit 310, obtain desirable short circuit.This situation can be coupled to diode with most of LO signals 145, is that λ can make all input rf signals 110 be shorted to ground at RF signal 110 places still.The length " X " of the microstrip between length of closing line 335 " S " and RF waveguide 300 and the closing line 335 influences the coupling of LO signal 145 and diode chip for backlight unit 310 in fact together." S " is set at intermediate length with length, can change length " X " so that the optimum coupling at LO frequency place to be provided.Yet it is minimum to 110 influences of RF signal to change length " X ".
2, RF circuit
Simultaneously, the length of two closing lines 355 " S " is about 3/4 λ at RF frequency place, effective impedance in the middle of this closing line shows diode chip for backlight unit 310 (that is to say some state between RF frequency place open circuit and the short circuit).Can change the length " Y " of the microwave transmission band portion between diode chip for backlight unit 310 and the RF filter 314 now, to be provided to the optimum coupling of diode chip for backlight unit 310 in the RF frequency.Change the influence minimum of length " Y " to LO signal 145.
3, IF circuit
The output of expectation IF signal is sightless to the LO circuit.Connection to filter pin 350 is provided by second pair of golden closing line 325, and the far-end of the golden closing line 325 of this second couple is connected to gold-plated filter pin 350.Closing line 355 relevant same principle in above-mentioned and the RF circuit can be used.In this case, only consider the LO frequency in the time of outside second pair of golden closing line 325 is attached to the high frequency filter 314 of blocking RF signal 110.Choose the length (" T " shown in Figure 3) of the lead 325 of filter pin 350 then, make when making up with IF filter pin assemblies, the whole structure of IF output is minimized with respect to the LO coupling to diode chip for backlight unit 310.By selecting demodulation or imbalance, can make 325 pairs of LO signals 145 of lead invisible basically by the length that IF exports the load that presents in LO frequency place.In fact, consider with closing line 325 and pin 350 between the relevant stray reactance of interconnection and the length of the first of pin 350 select length " T " by rule of thumb, think that the LO signal 145 of filter provides radio frequency to open a way as far as possible.If these factors combine get up to show λ/4 or λ/2 length at LO frequency place, will there be the open circuit of homophase reflection (in phase reflection) and expectation so.In the above-described embodiments, suitable length " T " is 570 microns.
Because the IF frequency is much smaller than RF signal 110 or LO signal 145, the wavelength of comparing IF signal 150 with the size of stub tuner closing line 355 is long.Therefore, the length of lead 325 is very little to the influence of IF circuit, and can only carry out optimization for them to the influence of LO circuit.Make length " T " short in fact as much as possible in this respect, the feasible minimum that influences to the IF signal path.The length " Z " of the microstrip between stub tuner closing line 355 and the LO waveguide 345 is because identical reason also is minimized.In order to make any minimum that influences, preferably make " T " and " Z " to be lower than 1/10th of IF wavelength to the IF circuit.If therefore the IF frequency is 20GHz, the IF wavelength is 15 millimeters so, and therefore if possible, " T " and " Z " should be no more than 1.5 millimeters.
Information about the known principle of stub tuning for example can obtain in following document: " the HighFrequency Techniques:An Introduction to RF and MicrowaveEngineering " that the Joseph F.White that is published in January, 2004 by Wiley-IEEE Press writes
Although in order to realize the mixer design of maximum bandwidth, requirement will be positioned to the stub tuner of diode chip for backlight unit 310 delivering powers as far as possible near the position of diode chip for backlight unit, in fact can carry out many variations.Discovery is added one or more stub tuners along other positions that length is marked as the microstrip of " X " or " Y " among Fig. 3, thereby for RF signal 110 or LO signal 145 provide certain additional fine setting is useful, but then, this may introduce more the interference between LO tuning circuit and RF tuning circuit.Although on same straight line, this is optional to should be understood that each parts (particularly those have be labeled as " X ", the parts of the distance of " Y " and " Z ") of the circuit that illustrates on quartz substrate 315.The stub tuner quadrature neither be essential.
The design of Shi Shiing provides two circuit that are isolated from each other, i.e. RF and LO circuit effectively as mentioned above.This allow to regulate each circuit, so that optimum performance to be provided on LO frequency or RF frequency, simultaneously to another upset minimum.The key that allows to do like this is to use additional pair of engaging line 355 at RF signal 110 to coupling place of diode chip for backlight unit 310.
Also can in each LO and IF circuit, only use a closing line 355,325, but in each case two closing lines 355,325 make may be by changing length so that they are different slightly and provide redundancy to come trimming circuit by rule of thumb.
With reference to figure 2,10 and 11, mention above by piling up (build up) a plurality of substrate layers 210 and can construct the array of horn antenna 115.This is feasible on principle, as long as can be along away from horn antenna 115 and be orthogonal to filter pin 350 and the direction of its through hole 340 is taken out IF output 215 backward from this array.In fact, as shown in Figure 2, this individual path 205 with the frequency mixer 120 that LO signal 145 is sent to down one deck conflicts mutually.Figure 11 shows the solution of this conflict, wherein common substrate 210 is actual is two sublayers, these two sublayers provide interface 1000 together, the interface 1100 that can hold IF output 215 also is provided simultaneously, and the quartz substrate 315 of wherein carrying diode chip for backlight unit 310 can be contained in this interface 1000.
Embodiments of the invention are particularly useful at the aspect of performance of optimizing based on the detector of the sub-harmonic mixer that is operated in second harmonic, but also can be used in the operation of high order harmonic component more.

Claims (33)

1, a kind of electromagnetic radiation detector comprises:
I) at least one substrate;
Ii) be used to receive the radio frequency input of radiofrequency signal that will be detected;
Iii) be used to receive the local oscillator input of local oscillator signal;
Iv) by described substrate supports and be coupled to the frequency mixer that the input of described radio frequency and local oscillator are imported, be used for producing intermediate-freuqncy signal by radiofrequency signal and the described local oscillator signal mixing that will be received; With
V) filter channel is used for controlling radiofrequency signal at the path of described detector and extract described intermediate-freuqncy signal,
Wherein this substrate is equipped with the aperture, and described aperture has the axis direction that extends in the described substrate, and is contained in the described aperture to the small part filter channel.
2, detector according to claim 1, wherein said substrate has first and second apparent surfaces, and the axis direction in described aperture extends to described second surface from described first surface.
3, detector according to claim 2, wherein said frequency mixer is supported by described first apparent surface of described substrate.
4, according to aforementioned any described detector of claim, wherein said aperture holds the intermediate frequency extraction part that is used for extracting from described detector the filter channel of described intermediate-freuqncy signal.
5, detector according to claim 4, wherein said intermediate frequency extraction unit branch comprises coaxial filter, the physical size of selecting described coaxial filter is to provide the extraction of described intermediate-freuqncy signal.
6, detector according to claim 5, wherein said coaxial filter comprises 1/4 wavelength filter.
7, according to any described detector of claim in claim 5 or 6, wherein said coaxial filter comprises the pin that is roughly cylindrical part and has the substantial cylindrical cross section in described aperture, and this pin coaxially is installed in the described cylindrical part.
8, detector according to claim 7, the cylindrical part in wherein said aperture has the electric conducting material surface, and described pin comprises electrical insulating material, described electrical insulating material has the conductive coating on its cylindrical surface or a plurality of cylindrical surface, and these provide described coaxial filter together.
9, according to any described detector of claim in the claim 6,7 or 8, wherein said coaxial filter comprises the pin with substantial cylindrical cross section, and described pin has at least two different parts of diameter separately so that described 1/4 wavelength filter to be provided.
10, according to aforementioned any described detector of claim, also comprise the described sealing of sealing in the described aperture to the small part filter channel.
11, according to any described detector of claim in the claim 7,8 or 9, wherein said pin is installed in by means of annular construction member thinks in the described cylindrical part that described aperture provides sealing.
12, detector according to claim 11, the described cylindrical part in wherein said aperture has step-like variation on cross section, so that at least one abutment surface to be provided, against the fixing described annular construction member of this abutment surface.
13, a kind of electromagnetic radiation detector comprises:
I) be used to receive the radio frequency input of radiofrequency signal that will be detected;
Ii) be used for the local oscillator input of received RF local oscillator signal;
Iii) be connected to described radio frequency input and be connected to the frequency mixer that described local oscillator is imported, this frequency mixer is used for producing intermediate-freuqncy signal by radiofrequency signal that will be received and local oscillator signal mixing; And
Iv) intermediate-frequency filter is used to extract this intermediate-freuqncy signal,
The electrical connection that is used for described intermediate-freuqncy signal is sent to from described frequency mixer described filter wherein is provided, select the length of this connection so that, make radio-frequency radiation to be shown as open circuit at least substantially at filter described in the use of described detector by described filter electric loading that presents and the radio-frequency radiation mismatch of in described detector, propagating.
14, detector according to claim 13, wherein said electrical connection are connected to the local oscillator input.
15, according to any described detector of claim in claim 13 or 14, each of wherein said radio frequency input and local oscillator input comprises at least one electric conductor, and in the use of described detector, the length of each described electric conductor is significantly less than the wavelength of described intermediate-freuqncy signal.
16, detector according to claim 15, wherein in the use of described detector, the length of each described electric conductor be no more than described intermediate-freuqncy signal wavelength 1/10th.
17, according to the described detector of any one claim in claim 15 or 16, wherein each described electric conductor comprises power transmission line.
18,, wherein be used for described intermediate-freuqncy signal is comprised at least one lead from the electrical connection that described frequency mixer is sent to described filter according to the described detector of any one claim in the claim 13 to 17.
19, a kind of electromagnetic radiation detector comprises:
I) be used to receive the radio frequency input of radiofrequency signal that will be detected;
Ii) be used for the local oscillator input of received RF local oscillator signal;
Iii) be coupled to the frequency mixer of described radio frequency input and the input of described local oscillator, this frequency mixer is used for carrying out mixing by radiofrequency signal that will be received and described local oscillator signal and produces intermediate-freuqncy signal; And
Iv) intermediate-frequency filter is used to extract described intermediate-freuqncy signal;
Wherein this frequency mixer is coupled to described local oscillator input and the input of described radio frequency by corresponding power transmission line, and this detector also comprises the stub tuner of the power transmission line that is connected to described radio frequency input, in use, the length of described power transmission line and described stub tuner is selected together optimizing described local oscillator signal to the coupling of described frequency mixer, and the length of described stub tuner be selected as the radiofrequency signal that is received presented in the middle of effective impedance.
20, detector according to claim 19, wherein in the use of described detector, the length of stub tuner shows as the distance that is equivalent to less than the half-wavelength of described local oscillator signal.
21, detector according to claim 20, wherein in the use of described detector, the length of stub tuner equals the length less than the half-wavelength of described local oscillator signal.
22, according to any described detector of claim in the claim 19 to 21, the input of wherein said local oscillator comprises radio-frequency filter, is used for limiting the propagation at described detector of the radiofrequency signal that received.
23, detector according to claim 22, wherein said local oscillator input comprises the power transmission line that radio-frequency filter is connected to frequency mixer, and in use, select the length of described power transmission line together with the length of stub tuner, to optimize the coupling of the radiofrequency signal that received to described frequency mixer.
24, according to any described detector of claim in the claim 19 to 23, wherein, in the use of described detector, the length of stub tuner shows as and is equivalent to greater than the half-wavelength of the radiofrequency signal that is received but less than the distance of the whole wavelength of the radiofrequency signal that is received.
25, according to any described detector of claim in the claim 19 to 24, wherein, in the use of described detector, the length of stub tuner equals greater than the half-wavelength of the radiofrequency signal that is received but less than the length of the whole wavelength of the radiofrequency signal that is received.
26, according to any described detector of claim in the claim 19 to 25, wherein frequency mixer is by substrate supports, and this substrate has conductive surface, and the end of stub tuner is connected to described conductive surface.
27, according to the detector of claim 26, wherein said radio frequency input, local oscillator input and frequency mixer all are installed on the common substrate, and described common substrate is again by this substrate supports with conductive surface.
28, according to any described detector of claim in claim 26 or 27, wherein, the described substrate with conductive surface is equipped with the aperture by wherein, and described intermediate-frequency filter is installed in the described aperture.
29, according to any described detector of claim in the claim 19 to 28, wherein said stub tuner comprises at least one lead.
30, according to any described detector of claim in the claim 19 to 29, wherein said stub tuner comprises at least two conducting elements with different length.
31, according to above-mentioned any described detector of claim, wherein said frequency mixer comprises sub-harmonic mixer.
32, according to above-mentioned any described detector of claim, wherein said frequency mixer comprises a pair of balance diode.
33, a kind of terahertz radiation camera comprises according to the described detector of above-mentioned arbitrary claim.
CNA2007800240408A 2006-04-25 2007-04-25 Radiation detector Pending CN101479931A (en)

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Application publication date: 20090708