CN101469446A - Method for lateral epitaxial overgrowth of gallium nitride on silicon substrate - Google Patents
Method for lateral epitaxial overgrowth of gallium nitride on silicon substrate Download PDFInfo
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- CN101469446A CN101469446A CNA2007101861258A CN200710186125A CN101469446A CN 101469446 A CN101469446 A CN 101469446A CN A2007101861258 A CNA2007101861258 A CN A2007101861258A CN 200710186125 A CN200710186125 A CN 200710186125A CN 101469446 A CN101469446 A CN 101469446A
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Abstract
The invention relates to a method for cross growth of gallium nitride on a silicon substrate, which comprises the following steps: A1) an AlN seed layer is epitaxized on the surface of the silicon substrate; A2) the quick temperature reduction leads to the cracking of AlN, the AlN can form bar shaped cracks along a plurality of directions after the cracking, and SiN is formed at the cracks due to the existence of NH3; A3) the in-situ growth of the SiN is performed, and the SiN further grows at the cracks, and forms scattered distribution on the AlN to form a layer of mask; and A4) the gallium nitride is epitaxized on the AlN seed layer of the SiN mask until the GaN is completely merged. The method for cross growth of the gallium nitride on the silicon substrate is adopted, which ensures that the gallium nitride has cross epitaxial growth, makes the dislocation bend, reduces the dislocation, and overcomes the defect of high defect density appears on a GaN film epitaxized on the Si substrate due to the fact that larger thermal mismatching and lattice mismatching exist between the Si substrate and the GaN.
Description
Technical field
The present invention relates to the opto-electronic information technology field, more particularly, relate to a kind of method of lateral epitaxial overgrowth of gallium nitride on silicon substrate
Background technology
(GaN) and compound semiconductor thereof are transferred in the nitrogenize of III-V family, and the typical case's representative as third generation semiconductor material because of its unique physics, chemistry and mechanical property, has great application prospect at photoelectron and microelectronic.But because the difficulty of GaN body single crystal preparation and lack the foreign substrate material that is complementary with it, present business-like led carries out epitaxy on Sapphire Substrate and silicon carbide substrates.The Si substrate has low, the easy cleavage of cost, be easy to get large-area high-quality commercialization substrate and silicon-based devices are easy to advantages such as integrated.Growth of silicon substrate GaN sill and the obtained progress of device application have caused the great interest of people.Yet have bigger thermal mismatching and lattice mismatch between Si substrate and the GaN, cause the GaN film of extension on the Si substrate high defect concentration to occur, seriously restrict the application of the substrate GaN-based material of Si.
Summary of the invention
The technical problem to be solved in the present invention is, the defective of high defect concentration occurs at the GaN film of extension on the above-mentioned Si substrate of prior art, and method for cross growth of gallium nitride on a kind of silicon substrate is provided.
The technical solution adopted for the present invention to solve the technical problems is: construct method for cross growth of gallium nitride on a kind of silicon substrate, it is characterized in that, comprise the steps:
A1) in surface of silicon extension one deck AlN Seed Layer, fill NH3;
A2) fast cooling causes AlN be full of cracks, will form the capable crackle of bars along a plurality of directions after the AlN be full of cracks, and the existence in the place of crackle because of NH3 forms SiN;
A3) growth in situ SiN, further long thick at the SiN of place, crack, SiN forms odd distribution on AlN, forms one deck mask;
A4) extension gan on the AlN of SiN mask Seed Layer is till GaN is completely integrated.
In the method for cross growth of gallium nitride, described AlN seed layer thickness is between 5nm～300nm on silicon substrate of the present invention.
In the method for cross growth of gallium nitride, the thickness of SiN is between 1nm～50nm above the described AlN on silicon substrate of the present invention.
On silicon substrate of the present invention, in the method for cross growth of gallium nitride, in described steps A 4, comprise the steps,
A4.1) described GaN grows on the AlN Seed Layer, and does not grow in the place that SiN is arranged;
A4.2) when GaN growth 1～50nm thickness, change processing parameter.
In the method for cross growth of gallium nitride, in described steps A 4.2, it is specific as follows to change processing parameter, increases NH3 flow 20% to 100% on silicon substrate of the present invention, and elevated temperature 10 degree are to 100 degree.
In the method for cross growth of gallium nitride, described silicon substrate is Si (111) or Si (100) on silicon substrate of the present invention.
Implement method for cross growth of gallium nitride on the silicon substrate of the present invention, has following beneficial effect: because method for cross growth of gallium nitride on the silicon substrate of the present invention, adopt, make gan that the transverse growth that also has of longitudinal growth be arranged, make the dislocation bending, reduced dislocation, overcome and have bigger thermal mismatching between Si substrate and the GaN and lattice mismatch causes the GaN film of extension on the Si substrate defective of high defect concentration to occur.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the structural representation before the ALN layer does not chap;
Fig. 2 grows the structural representation of SiN layer longitudinally after the be full of cracks of ALN layer;
Fig. 3 is the structural representation that grows the SiN layer of vertical and horizontal after the be full of cracks of ALN layer;
Fig. 4 is the structural formula intention that grows the GaN layer on the SiN layer.
Embodiment
In conjunction with Fig. 1 to Fig. 4 method for cross growth of gallium nitride on the silicon substrate of the present invention is described.Specifically comprise the steps:
S1) be in Si substrate 2 surperficial extension one deck AlN Seed Layer 1.As shown in Figure 1.Wherein the AlN seed layer thickness is between 5nm～300nm.Silicon substrate is Si (111) or Si (100).
S2) fast cooling causes AlN Seed Layer 1 be full of cracks then, will form the capable crackle of bars along a plurality of directions after 1 be full of cracks of AlN Seed Layer, and the existence in the place of crackle because of NH3 forms SiN layer 3, as shown in Figure 2.
S3) growth in situ SiN, further long thick at the SiN of place, crack, SiN layer 3 forms odd distribution on AlN Seed Layer 1 at last, forms one deck mask (SiN herein is a horizontal extension), as shown in Figure 3.The thickness of SiN is between 1nm～50nm above the AlN.
S4) extension GaN layer 4 on the AlN of SiN mask Seed Layer 1 is till GaN layer 4 is completely integrated, as shown in Figure 4.GaN grows on the AlN Seed Layer, and does not grow in the place that SiN is arranged.Change processing parameter (carrier gas flux, pressure, NH3 flow, temperature, pressure, gallium source flux) when GaN grows into certain thickness, for example increase NH3 flow 20% to 100%, elevated temperature 10 degree are to 100 degree.The GaN transverse growth is speeded up, finally combine.
By step S1 and S2, SiN forms net distribution, as mask, horizontal extension, the dislocation bending reduces dislocation, has solved the problem that occurs high defect concentration between Si substrate that bigger thermal mismatching and lattice mismatch cause and the GaN film because of existing between Si and the GaN, reduce dislocation, the application that has improved Si substrate and GaN base material.
Claims (6)
1, method for cross growth of gallium nitride on the silicon substrate is characterized in that, comprises the steps:
A1) in surface of silicon extension one deck AlN Seed Layer, fill NH3;
A2) fast cooling causes AlN be full of cracks, will form the capable crackle of bars along a plurality of directions after the AlN be full of cracks, and the existence in the place of crackle because of NH3 forms SiN;
A3) growth in situ SiN, further long thick at the SiN of place, crack, SiN forms odd distribution on AlN, forms one deck mask;
A4) extension gan on the AlN of SiN mask Seed Layer is till GaN is completely integrated.
2, method for cross growth of gallium nitride on the silicon substrate according to claim 1 is characterized in that, described AlN seed layer thickness is between 5nm～300nm.
3, method for cross growth of gallium nitride on the silicon substrate according to claim 1 is characterized in that, the thickness of SiN is between 1nm～50nm above the described AlN.
4, method for cross growth of gallium nitride on the silicon substrate according to claim 1 is characterized in that, in described steps A 4, comprise the steps,
A4.1) described GaN grows on the A1N Seed Layer, and does not grow in the place that SiN is arranged;
A4.2) when GaN growth 1～50nm thickness, change processing parameter.
5, method for cross growth of gallium nitride on the silicon substrate according to claim 4 is characterized in that, in described steps A 4.2, changes the technology ginseng and is, increases NH3 flow 20% to 100%, and elevated temperature 10 degree are to 100 degree.
6, method for cross growth of gallium nitride on the silicon substrate according to claim 1 is characterized in that, described silicon substrate is Si (111) or Si (100).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101861258A CN101469446A (en) | 2007-12-27 | 2007-12-27 | Method for lateral epitaxial overgrowth of gallium nitride on silicon substrate |
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| CNA2007101861258A CN101469446A (en) | 2007-12-27 | 2007-12-27 | Method for lateral epitaxial overgrowth of gallium nitride on silicon substrate |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492986A (en) * | 2011-12-02 | 2012-06-13 | 北京大学 | Selective area hetero-epitaxial substrate structure, preparation thereof and epitaxial layer growing method |
| CN102851734A (en) * | 2012-09-06 | 2013-01-02 | 程凯 | Semiconductor epitaxy structure and growth method thereof |
| CN102945899A (en) * | 2012-11-23 | 2013-02-27 | 广州市众拓光电科技有限公司 | Gallium nitride (GaN) single crystal thin film growing on Ag substrate and preparation method and application thereof |
| CN108368640A (en) * | 2015-05-21 | 2018-08-03 | Ev 集团 E·索尔纳有限责任公司 | Method for being applied to outgrowth layer on seed layer |
-
2007
- 2007-12-27 CN CNA2007101861258A patent/CN101469446A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492986A (en) * | 2011-12-02 | 2012-06-13 | 北京大学 | Selective area hetero-epitaxial substrate structure, preparation thereof and epitaxial layer growing method |
| CN102492986B (en) * | 2011-12-02 | 2014-05-28 | 北京大学 | Selective area hetero-epitaxial substrate structure, preparation thereof and epitaxial layer growing method |
| CN102851734A (en) * | 2012-09-06 | 2013-01-02 | 程凯 | Semiconductor epitaxy structure and growth method thereof |
| CN102851734B (en) * | 2012-09-06 | 2015-11-25 | 苏州晶湛半导体有限公司 | Semiconductor extension structure and growing method thereof |
| CN102945899A (en) * | 2012-11-23 | 2013-02-27 | 广州市众拓光电科技有限公司 | Gallium nitride (GaN) single crystal thin film growing on Ag substrate and preparation method and application thereof |
| CN102945899B (en) * | 2012-11-23 | 2015-09-02 | 广州市众拓光电科技有限公司 | Growth GaN monocrystal thin films on metal A g substrate and preparation method thereof, application |
| CN108368640A (en) * | 2015-05-21 | 2018-08-03 | Ev 集团 E·索尔纳有限责任公司 | Method for being applied to outgrowth layer on seed layer |
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