CN101465397B - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN101465397B CN101465397B CN2007103020327A CN200710302032A CN101465397B CN 101465397 B CN101465397 B CN 101465397B CN 2007103020327 A CN2007103020327 A CN 2007103020327A CN 200710302032 A CN200710302032 A CN 200710302032A CN 101465397 B CN101465397 B CN 101465397B
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Abstract
The invention provides an LED and a manufacturing method thereof; the LED comprises a substrate provided with a first surface and a second surface, a luminous epitaxial structure on the first surface of the substrate, and a compound reflecting layer on the second surface of the substrate; wherein, the second surface is provided with a protection segment. The invention can improve the LED quality and the yield rate; the protection segment formed on the substrate of the LED and at one side opposite to the epitaxial structure so as to prevent the LED against the problems caused by the soldering tin entering among the compound reflecting mental layers at the stage of eutectic bonding.
Description
Technical field
The present invention relates to a kind of structure of LED crystal particle, particularly a kind of light-emitting diode and manufacture method thereof with protection section.
Background technology
Light-emitting diode has many advantages, component size little (compact size) for example can be incorporated into the element of medium and small-sized or needs in the element of miniaturization, and can the DC power supply operation, the drive circuit simplicity of design, little the reaching of consumed power is applied in the portable element easily.Moreover light-emitting diode meets the no mercury technology of the harmful substance ban (Rohs) of European Union, has the advantage of environmental protection, and it adopts semiconductor technology, falls so product is firm and anti-.Each coloured light in all visible light spectrum can be launched by light-emitting diode, and the application of light-emitting diode is from march toward other the application of simple index signal, for example throws light on or the backlight of white is provided.
Compared to light-emitting diode, traditional light source, incandescent lamp bulb for example, main emitted energy is at infrared ray, and infrared ray also can produce many heat except not seen by human eye, for being to be power consumption for the purpose with luminous.The spectrum concentration of light-emitting diode does not have the generation of infrared light sources, is quite energy-conservation light source compared to incandescent lamp bulb.And the light source that cathode ray tube produces, fluorescent lamp for example, the life-span of use is compared to the suitable weak point of light-emitting diode, and needs a stabilizer remove to drive fluorescent tube.In addition, fluorescent tube is to use cathode-ray deexcitation mercury vapour, does not also meet modern environmental requirement.Therefore, aspect traditional illumination, high brightness LED has a large amount of market demands.
Improve the brightness of light-emitting diode, several modes are arranged.The mode of intuition is exactly to improve the current density of passing through in light-emitting diode, because luminosity is directly proportional with the current density of passing through in light-emitting diode.In addition, just provide the LED crystal particle of large-size, for example 40 * 40 Mil (mil; One thousandth English inch) crystal grain, light-emitting area increases, and luminous brightness increases certainly.
Except the mode of direct raising brightness, another kind of mode is exactly that the light that will not have to utilize adds utilization again.Main mode reflexes to the front with regard to being to use reflective metal layer with the light at the directive back side, and is for example shown in Figure 1.In Fig. 1, at the brilliant substrate 10 brilliant light-emitting diode epitaxial structure layers 12 that form of heap of stone of heap of stone, below brilliant substrate 10 of heap of stone, form so-called composition metal reflector, comprise metallic aluminium 20, Titanium 22, argent 24 and golden tin layer 26.The general use after the composition metal reflector, luminosity can increase about 30% to 50%.
After light-emitting diode forms, need be with LED package in order to carry out its application.At present, in encapsulation, crystal grain is to use crystal-bonding adhesive that crystal grain is fixed on the encapsulation base material.General crystal-bonding adhesive mainly is epoxy resin doping metals silver, is called elargol again.Silver-doped can allow epoxy resin have the effect of conduction and heat conduction, particularly when the grainiess of light-emitting diode is the antarafacial electrode, needs to use the crystal-bonding adhesive that can conduct electricity.After overbaking, epoxy resin can be fixed on light-emitting diode on the base plate for packaging.
The another kind of mode that light-emitting diode is fixed on the encapsulation base material is to use eutectic (eutectic) to engage, and the mode that is about to crystal grain use metal eutectic is fixed on the encapsulation base material.As shown in Figure 2, the golden tin layer 26 of bottom one deck of light-emitting diode can form the metal eutectic with the scolding tin 30 that is positioned on the encapsulation base material.Using the eutectic joint that light-emitting diode is fixed on the encapsulation base material has many advantages, and for example joint is tightr, can allow light-emitting diode can bear higher push-pull effort.In addition, the heat radiation of metal is better than epoxy resin, and light-emitting diode can have preferable radiating effect.
Yet, in the technology that eutectic engages, when scolding tin is squeezed, can be along the edge climbing of crystal grain.In this technology, the scolding tin of climbing can enter between the reflective metal layer, as shown in Figure 3.In Fig. 3, the scolding tin 40 of climbing may enter between brilliant substrate 10 of heap of stone and the metallic aluminium 20 along the side of light-emitting diode, between metallic aluminium 20 and the Titanium 22, between Titanium 22 and the argent 24 or between argent 24 and the golden tin layer 26.Invade the scolding tin 40 between the complex reflex metal level, can reduce the reflecting effect of light-emitting diode, and cause the problems such as life-span reduction of product.
In sum, need badly on the market and want a kind of structure of avoiding scolding tin to invade the LED crystal particle of lamination inside, and can improve the various shortcomings of above-mentioned existing light-emitting diode.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode; it can promote the quality and manufacturing qualification rate of light-emitting diode; substrate at light-emitting diode is protected section with respect to the one side formation of epitaxial structure; can prevent light-emitting diode at the eutectic zygophase, scolding tin enters the problem that causes between the complex reflex metal level.
The invention provides a kind of light-emitting diode, comprise one have one first with one second base material, one be positioned on first of this base material can be luminous epitaxial structure, an and complex reflex layer that is positioned on second of this base material.Wherein this second mask has a protection section.
A kind of manufacture method of above-mentioned light-emitting diode, be included in first of a base material form one can be luminous epitaxial structure, second at this base material forms a protection section afterwards, and forms a complex reflex layer second of this base material.Above-mentioned base material is used for brilliant base material of heap of stone, can be sapphire substrate, silicon carbide substrate, GaAs substrate, silicon substrate, indium phosphide substrate, gallium phosphide substrate or zinc oxide substrate.
The another kind of manufacture method of above-mentioned light-emitting diode, comprise in regular turn a temporary transient base material form one can be luminous epitaxial structure, epitaxial structure that can be luminous at this forms a base material.Remove this temporary transient base material afterwards.Form a protection section at above-mentioned base material, and form a complex reflex layer at base material.
Above-mentioned protection section is at least one irrigation canals and ditches, or a plurality of irrigation canals and ditches pattern takes this base material.The outline of irrigation canals and ditches pattern and light-emitting diode (outward appearance) approaches or is inequality.
Above-mentioned complex reflex layer can be Ni/Au/Al/Ti/Au, ITO/Al/Ti/Au, ITO/Al/Ti/Ag, ITO/SiO
2/ Al/SiO
2, SiO
2/ Al/SiO
2/ Ag or Al/Ti/Ag.Also comprising one deck gold tin layer outside the complex reflex layer is fixed on the encapsulation base material with the eutectic juncture so that light-emitting diode to be provided.
Useful technique effect of the present invention is: by light-emitting diode of the present invention; can promote the quality and manufacturing qualification rate of light-emitting diode; substrate at light-emitting diode is protected section with respect to the one side formation of epitaxial structure; can prevent light-emitting diode at the eutectic zygophase, scolding tin enters the problem that causes between the complex reflex metal level.
Description of drawings
Fig. 1 is for forming the cross section structure schematic diagram of the light-emitting diode with reflective metal layer in a conventional manner;
Fig. 2 carries out the schematic diagram that eutectic engages for the light-emitting diode with Fig. 1;
The problem of Fig. 3 for carrying out with traditional technology being run into when eutectic engages;
Fig. 4 is for forming the cross section structure schematic diagram of the light-emitting diode with protection section with method of the present invention;
The schematic top plan view of Fig. 5 for invading in the scolding tin climbing with the light-emitting diode with protection section of Fig. 4;
The another kind of schematic top plan view of Fig. 6 for invading in the scolding tin climbing with the light-emitting diode with protection section of Fig. 4;
Fig. 7 is for forming the cross section structure schematic diagram of each step of the light-emitting diode with protection section with method of the present invention, wherein photoresist has had the pattern of irrigation canals and ditches;
Fig. 8 is for forming the cross section structure schematic diagram of each step of the light-emitting diode with protection section with method of the present invention, wherein hard screen forms the pattern of irrigation canals and ditches after etching;
Fig. 9 is for forming the cross section structure schematic diagram of each step of the light-emitting diode with protection section with method of the present invention, wherein substrate forms the pattern of irrigation canals and ditches after etching;
Figure 10 is for forming the cross section structure schematic diagram of each step of the light-emitting diode with protection section with method of the present invention, wherein the composition metal reflector is formed on the substrate with irrigation canals and ditches in regular turn; And
Figure 11 is for forming the cross section structure schematic diagram of each step of the light-emitting diode with protection section with method of the present invention, wherein the golden tin layer that engages in order to eutectic is formed on the composition metal reflector.
Wherein, description of reference numerals is as follows:
10 brilliant substrate 12 epitaxial structure layers of heap of stone
20 metallic aluminiums, 22 Titaniums
24 argents, 26 gold medal tin layers
30 scolding tin, 40 scolding tin
100 brilliant substrate 110 luminous epitaxial structures of heap of stone
120 metallic aluminiums, 122 Titaniums
124 argents, 126 gold medal tin layers
130 scolding tin, 140 scolding tin
142 scolding tin, 200 hard screens
210 photoresist layers
220,222-1,222-2,222-3,222-4,222-5 irrigation canals and ditches
Embodiment
The schematic diagram that present embodiment is related is in the mode of accompanying drawing and illustrates embodiments of the invention not in order to limit the scope of the invention.The content of accompanying drawing is structural representation, can not be with the size limit scope of the present invention of accompanying drawing.
The objective of the invention is to form the protection section at the base material of light-emitting diode, prevent that at the eutectic zygophase, scolding tin can enter between the composition metal reflector.The protection section can be carried out in the technology of crystal grain cutting after crystalline substance of heap of stone, also can directly form before crystalline substance of heap of stone.In the technology of crystal grain cutting, form protection section and composition metal reflector earlier before can forming at the electrode of light-emitting diode; Also can be after the electrode and protective layer that form light-emitting diode, Jingjing circle of heap of stone forms protection section and composition metal reflector before cutting into chip.
Protection section mainly is to form irrigation canals and ditches at substrate in an embodiment of the present invention, makes when scolding tin will enter slit between the composition metal reflector, can increase the distance that enters; And the direction that scolding tin pierces the slit changes, and the difficulty that makes scolding tin pierce increases, and therefore can stop entering of scolding tin.
The pattern of irrigation canals and ditches can be identical with the outline of crystal grain, is square, in addition, also can be circular or other shape, for example pattern or the irregular pattern of ellipse, rhombus, rule.The degree of depth of irrigation canals and ditches is unrestricted, and main purpose is to increase the difficulty that scolding tin enters slit between the composition metal reflector.The width of irrigation canals and ditches is unrestricted, mainly can allow the composition metal reflector be formed in the irrigation canals and ditches in conformal mode.The quantity of irrigation canals and ditches can be one, two, three, or is formed on the back side of whole crystal grain.The generation type of irrigation canals and ditches can be used etching, and the selection of etchant relies on the difference of base material and difference.
Base material can be brilliant substrate of heap of stone, also can be other substrate.For example, after original of heap of stone brilliant substrate crystalline substance of heap of stone, form one second substrate, then original of heap of stone brilliant substrate is removed.Such technology is called substrate and lifts off (lift-off) technology.For example, the GaAs substrate is removed, and form gallium phosphide substrate or metal substrate at the other end of epitaxial structure, or sapphire substrate is lifted off technology with laser to be removed, and form metal substrate at the other end of epitaxial structure.
Next, the structural representation of the embodiment of the invention is described with Fig. 4.Fig. 4 is the cross section structure schematic diagram of light-emitting diode, and at first luminous epitaxial structure 110 of formation of brilliant substrate 100 of heap of stone, epitaxial structure 110 that wherein can be luminous comprises a n type compound semiconductor layer and a p-type compound semiconductor layer.Brilliant substrate 100 of heap of stone can be sapphire substrate, silicon carbide substrate, GaAs substrate, silicon substrate, indium phosphide substrate, gallium phosphide substrate or zinc oxide substrate etc.Epitaxial structure 110 can be the III-V group iii v compound semiconductor material, for example: three races's arsenide, three races's phosphide and III-nitride, it can comprise GaAs, gallium phosphide, phosphatization gallium aluminium, InGaP, AlGaInP, gallium nitride, aluminium gallium nitride alloy, InGaN or aluminum indium nitride gallium.Epitaxial structure 110 also can be other II-VI group iii v compound semiconductor material.Epitaxial structure 110 generally is to react of heap of stone brilliant in the CVD (Chemical Vapor Deposition) chamber the inside, for example organic metal gas phase brilliant (OMVPE of heap of stone; OrganoMetal Vapor Phase Epitaxy), hydride gas phase brilliant (HVPE of heap of stone; Hydride Vapor Phase Epitaxy).At present, between n type compound semiconductor layer and p-type compound semiconductor layer, can form an active layers to promote luminous efficiency.Active layers and n type compound semiconductor layer and p-type compound semiconductor layer form so-called double-heterostructure (DoubleHetrostructure).Another kind of active layers has multiple quantum trap (MQW; Multiple Quantum Well) structure can further promote the efficient of light-emitting diode.
After forming epitaxial structure 110, form at least one irrigation canals and ditches 220 second (generally the referring to the back side of light-emitting diode) of building brilliant substrate 100.The degree of depth of irrigation canals and ditches 220 is good with the light effect that goes out that does not influence light-emitting diode.In the composition metal reflector, comprise metallic aluminium 120, Titanium 122, argent 124 etc. and be formed in regular turn in the mode of conformal (conformal) on second of of heap of stone brilliant substrate 100 with irrigation canals and ditches 220.The last golden tin layer 126 in composition metal reflector is filled and led up irrigation canals and ditches 220, be conducive to base plate for packaging on scolding tin 130 between carry out eutectic and engage.
Fig. 5 is a kind of vertical view of the cross section structure among Fig. 4.When substrate and epitaxial structure are when transparent, Fig. 5 is the schematic diagram from surface of first base vertical view 4.In Fig. 5, the profile of two irrigation canals and ditches 220-1 and 220-2 is near the outline of LED crystal particle, and irrigation canals and ditches 220 are identical material with part beyond the irrigation canals and ditches in the accompanying drawings, and indicate with hachure separately for the convenience of accompanying drawing.The scolding tin 140 of climbing is invaded from the side of light-emitting diode, is difficult to continue to enter after running into irrigation canals and ditches 220-1 again.The quantity of irrigation canals and ditches the more, the chance that scolding tin is invaded is littler.
Fig. 6 is the another kind of vertical view of the cross section structure among Fig. 4.In this embodiment, have five irrigation canals and ditches 222-1,222-2,222-3,222-4, reach 222-5, each irrigation canals and ditches is circle.In the embodiment of Fig. 6, the width of each irrigation canals and ditches is all different, can be well-regulated variation, or random variation.The scolding tin 142 of climbing is invaded from the side of light-emitting diode, is difficult to continue to enter after running into irrigation canals and ditches 222-1 again.Even if the scolding tin 142 of climbing can pass through irrigation canals and ditches 222-1, the back also has other irrigation canals and ditches can stop that the scolding tin 142 of climbing enters.
The structural representation in the cross section of each step of formation light-emitting diode as shown in Figure 4 such as Fig. 7 are to shown in Figure 11.
As shown in Figure 7, building first epitaxial structure 110 that forms light-emitting diode of brilliant substrate 100.Second at brilliant substrate 100 of heap of stone forms a hard screen 200, and the material of hard screen 200 is silicon dioxide in the present embodiment.Form (patterned) photoresist layer 210 that a process design transfer is crossed at hard screen 200.The generation type of silicon dioxide can be physical vapour deposition (PVD), chemical vapour deposition (CVD) or rotation coating (SOG; Spin on coating), for example aumospheric pressure cvd, low-pressure chemical vapor deposition, plasma gain chemical vapour deposition (CVD), high density plasma CVD or with the spin coating of tetraethyl-metasilicate mode etc.Hard screen 200 also can use other material, and for example silicon nitride, silicon oxynitride or other can have the material of etching selectivity between with brilliant base material 100 of heap of stone, and etching selectivity is healed height better.
Photoresist layer 210 can be selected positive photoresist or negative photoresist, usually use the mode of rotation coating to be formed on the hard screen 200, then through pre-roasting (prebake), exposure (exposure), develop (develop), back baking (post bake) forms figuratum photoresist layer 210 as shown in the figure afterwards.
In the present embodiment with sapphire as brilliant substrate 100 of heap of stone, yet can also be applied to other of heap of stone brilliant substrate, do not repeat them here.
Afterwards, as shown in Figure 8, with photoresist layer 210 as the shielding, the hard screen 200 of etching.In the present embodiment, etched mode can be dry ecthing or wet etching.In wet etching, the etchant of etch silicon dioxide can be hydrofluoric acid.In dry ecthing, the general gaseous plasma that uses the fluorine carbide carries out dry-etching with active ion reactor (RIE), magnetic field-intensification active ion reactor (MERIE), electron cyclotron resonace formula plasma etching machine (ECR), inductive coupling type plasma etching machine (ICP) or Helicon wave plasma etching machine (HWP) etc.
Then, as shown in Figure 9, be shielding with hard screen 200, etching brilliant substrate 100 of heap of stone forms irrigation canals and ditches 220, and wherein etched mode can be wet etching or dry ecthing.In the present embodiment, as brilliant substrate 100 of heap of stone, therefore the etchant of selecting in wet etching is sulfuric acid and phosphoric acid, and uses in dry ecthing with the gaseous plasma of boron chloride as substrate with sapphire.Dry ecthing can be carried out at active ion reactor, magnetic field-intensification active ion reactor, electron cyclotron resonace formula plasma etching machine, inductive coupling type plasma etching machine or Helicon wave plasma etching machine etc.The difference of two kinds of etching modes is etched profile.Preferable with dry-etching in the present embodiment, because the scolding tin of climbing need overcome subvertical corner will enter slit between the composition metal reflector time, the difficulty of intrusion is bigger.
Then, as shown in figure 10, form the composition metal reflector in regular turn.Forming metallic aluminium 120 earlier, is Titanium 122 then, is argent 124 afterwards.In the present embodiment, the three-layer metal layer is conforma layer (conformal layer).The generation type of three layers metal level can be chemical vapour deposition (CVD) or physical vapour deposition (PVD), for example use the mode of evaporation, thermal source can be the electron beam heating, or uses radio frequency, heating plate etc., can also use modes such as sputter, molecular beam epitaxy method and plating, change plating.
Yet conforma layer can only be formed on the ground floor metallic aluminium 120, and the Titanium 122 of the second layer afterwards can fill up irrigation canals and ditches, or the 3rd layer argent 124 fills up irrigation canals and ditches.
Except using in the present embodiment the composition metal reflector, can also use other composition metal reflector, for example Ni/Au/Al/Ti/Au, ITO/Al/Ti/Au or ITO/Al/Ti/Ag.In addition, can also use other material, for example ITO/SiO
2/ Al/SiO
2, or SiO
2/ Al/SiO
2The complex reflex layer of/Ag.
Afterwards, as shown in figure 11, form golden tin layer 126.In the present embodiment, golden tin layer 126 needs all irrigation canals and ditches that fall in are filled and led up.The mode that forms golden tin layer 126 can be chemical vapour deposition (CVD) or physical vapour deposition (PVD), for example use the mode of evaporation, thermal source can be the electron beam heating or use radio frequency, heating plate etc., can also use modes such as sputter, molecular beam epitaxy method and plating, change plating.
For using substrate to lift off the light-emitting diode of technology, be not to be that the substrate of building brilliant substrate 100 generally also can be applied among the present invention.Yet, if be not to be that the substrate of brilliant substrate 100 of heap of stone is metals, can have several modes to form irrigation canals and ditches.A kind of simple mode is on the p-type compound semiconductor layer, continues the p-type semiconducting compound layer of brilliant adequate thickness of heap of stone, forms irrigation canals and ditches at p-type semiconducting compound layer then, and metal substrate afterwards is conforma layer, has the pattern of irrigation canals and ditches.Another kind of mode is directly to form irrigation canals and ditches at metal substrate.
Technology contents of the present invention and technical characterstic as above-mentioned record, yet those of ordinary skill in the art still may do all replacement and modifications that does not deviate from spirit of the present invention based on instruction of the present invention and record.Therefore, protection scope of the present invention should be not limited to the related content of embodiment, and should comprise various do not deviate from replacement of the present invention and modifications, and is encompassed in the protection range of following claims.
Claims (8)
1. light-emitting diode comprises:
One base material has one first and one second, and wherein this second mask has a protection section, and this protection section is at least one irrigation canals and ditches;
One can be luminous epitaxial structure, be positioned on first of this base material; And
One complex reflex layer is positioned on second of this base material, and is positioned at the outer golden tin layer of complex reflex layer, and this gold tin layer provides this light-emitting diode to be fixed on the encapsulation base material with the eutectic juncture, and this complex reflex layer is formed in the irrigation canals and ditches in conformal mode.
2. method of making light-emitting diode comprises:
One base material is provided, and this base material has one first and one second;
First of this base material form one can be luminous epitaxial structure;
Second at this base material forms a protection section, and this protection section is at least one irrigation canals and ditches; And
Second at this base material forms a complex reflex layer and form golden tin layer outside the complex reflex layer, and this gold tin layer provides this light-emitting diode to be fixed on the encapsulation base material with the eutectic juncture, and this complex reflex layer is formed in the irrigation canals and ditches in conformal mode.
3. the method for the described manufacturing light-emitting diode of light-emitting diode according to claim 1 or claim 2, wherein this base material is base material with crystalline substance of heap of stone, can be sapphire substrate, silicon carbide substrate, GaAs substrate, silicon substrate, indium phosphide substrate, gallium phosphide substrate or zinc oxide substrate.
4. method of making light-emitting diode comprises:
One temporary transient base material is provided;
This temporary transient base material form one can be luminous epitaxial structure;
Epitaxial structure that can be luminous at this forms a base material;
Remove this temporary transient base material;
Form a protection section at this base material, this protection section is at least one irrigation canals and ditches; And
Form a complex reflex layer and form golden tin layer outside the complex reflex layer at this base material, this gold tin layer provides this light-emitting diode to be fixed on the encapsulation base material with the eutectic juncture, and this complex reflex layer is formed in the irrigation canals and ditches in conformal mode.
5. the method for light-emitting diode according to claim 1 or claim 2 or 4 described manufacturing light-emitting diodes, wherein this complex reflex layer can be Ni/Au/Al/Ti/Au, ITO/Al/Ti/Au, ITO/Al/Ti/Ag, ITO/SiO
2/ Al/SiO
2, SiO
2/ Al/SiO
2/ Ag or Al/Ti/Ag.
6. the method for light-emitting diode according to claim 1 or claim 2 or 4 described manufacturing light-emitting diodes, wherein the pattern of these irrigation canals and ditches takes this base material.
7. the method for light-emitting diode according to claim 1 or claim 2 or 4 described manufacturing light-emitting diodes, wherein the outline of the pattern of these irrigation canals and ditches and this light-emitting diode approaches.
8. light-emitting diode comprises:
One brilliant base material of heap of stone has one first and one second, and wherein this second mask has a plurality of irrigation canals and ditches;
One can be luminous epitaxial structure, be positioned on first of this brilliant base material of heap of stone; And
One composition metal reflector is positioned on second of this brilliant base material of heap of stone, and this composition metal reflector can provide this light-emitting diode to be fixed on the encapsulation base material with the eutectic juncture, and this composition metal reflector is formed in the irrigation canals and ditches in conformal mode.
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|---|---|---|---|
| CN2007103020327A CN101465397B (en) | 2007-12-20 | 2007-12-20 | Light emitting diode and manufacturing method thereof |
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|---|---|---|---|
| CN2007103020327A CN101465397B (en) | 2007-12-20 | 2007-12-20 | Light emitting diode and manufacturing method thereof |
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|---|---|
| CN101465397A CN101465397A (en) | 2009-06-24 |
| CN101465397B true CN101465397B (en) | 2013-07-03 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373522A (en) * | 2001-03-05 | 2002-10-09 | 全新光电科技股份有限公司 | LED with substrate coated with metallic reflection film and its preparing process |
| CN1674307A (en) * | 2004-03-26 | 2005-09-28 | 晶元光电股份有限公司 | Organic bonding luminous assembly with verticals tructure |
| CN1744335A (en) * | 2004-08-31 | 2006-03-08 | 斯坦雷电气株式会社 | Surface mount LED |
-
2007
- 2007-12-20 CN CN2007103020327A patent/CN101465397B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373522A (en) * | 2001-03-05 | 2002-10-09 | 全新光电科技股份有限公司 | LED with substrate coated with metallic reflection film and its preparing process |
| CN1674307A (en) * | 2004-03-26 | 2005-09-28 | 晶元光电股份有限公司 | Organic bonding luminous assembly with verticals tructure |
| CN1744335A (en) * | 2004-08-31 | 2006-03-08 | 斯坦雷电气株式会社 | Surface mount LED |
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|---|---|
| CN101465397A (en) | 2009-06-24 |
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