CN101465389A - Near-infrared single photon detector - Google Patents
Near-infrared single photon detector Download PDFInfo
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- CN101465389A CN101465389A CNA2007101798911A CN200710179891A CN101465389A CN 101465389 A CN101465389 A CN 101465389A CN A2007101798911 A CNA2007101798911 A CN A2007101798911A CN 200710179891 A CN200710179891 A CN 200710179891A CN 101465389 A CN101465389 A CN 101465389A
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Abstract
The invention discloses a near infrared single-photon detector which comprises a substrate, a cushioning layer, an N-type ohmic contact layer, a superlattice multiplication layer, an electric filed control layer, a bandgap gradient layer and a light absorbing layer. Through the introduction of the superlattice structure and an absorbing layer gradient structure, the performance of the detector is improved; particularly, the detection frequency and noise influence of the detector are greatly improved, so that the gain bandwidth product of the detector can be effectively improved. In addition, the detector is provided with simple process and high repeatability.
Description
Technical field
The present invention relates to field of semiconductor devices, be specifically related to a kind of near-infrared single photon detector that the near-infrared faint optical signal is surveyed.
Background technology
The single-photon detecting survey technology is surveyed fields such as dirt, bioluminescence, radiation detection, high-energy physics, astronomical photometry, optical time domain reflection, quantum key distribution system and is had a wide range of applications at high-resolution spectral measurement, non-destructive species analysis, the detection of high speed phenomenon, rigorous analysis, atmosphere.Particularly the research of quantum communications technology in recent years, quantum cryptography constantly causes the attention of various countries, and the research of infrared communication waveband single photon detector is also just seemed particularly urgent.
Existing single-photon detector, what the amplification of light signal was adopted is to utilize the hole to cause the avalanche multiplication amplifying optical signals, its dynode layer material is InP, yet the mobility in hole is lower, the frequency band of detection that suppresses detector, in addition, the hole of InP material and the ionization level of electronics are more approaching, make detector that bigger noise factor be arranged; Utilize the thickness increase of InGaAs to improve the quantum efficiency of detector, this has equally also limited look-in frequency.In addition, because the having relatively high expectations of manufacturing process, the detection efficient of ultrared single-photon detector in the market is low, the big and complex process of noise, repeatable shortcoming such as low.In order to overcome these shortcomings, we have proposed the present invention.
Summary of the invention
The object of the present invention is to provide a kind of near-infrared single photon detector structure, it has quantum efficiency height, gain bandwidth product is big, noise is low characteristics.Particularly technological requirement is low, favorable repeatability.
To achieve these goals, a kind of near-infrared single photon detector structure of the present invention is characterized in that, comprising:
(1) substrate, this substrate are used for carrying out the epitaxial growth of detector layers of material thereon;
(2) resilient coating, this resilient coating is produced on the substrate;
(3) N type ohmic contact layer, this N type ohmic contact layer is produced on the resilient coating;
(4) superlattice dynode layer, this superlattice dynode layer are produced on the N type ohmic contact layer;
(5) electric field controls layer, this electric field controls layer is produced on the superlattice dynode layer;
(6) band gap graded bedding, this band gap graded bedding is produced on the electric field controls layer;
(7) light absorbing zone, this light absorbing zone are produced on the band gap graded bedding;
(8) resilient coating, this resilient coating is produced on the light absorbing zone;
(9) P type ohmic contact layer, this P type ohmic contact layer is produced on the resilient coating;
Wherein this substrate is the InP substrate;
Wherein this resilient coating is the InP material of non-doping;
Wherein this N type ohmic contact layer is a N type InAlAs material;
Wherein this superlattice dynode layer is the InAlAs/InAlGaAs material;
Wherein this electric field controls layer is a N type InAlAs material;
Wherein this band gap graded bedding is an InAlGaAs quaternary compound material;
Wherein this absorbed layer is the InGaAs material;
Wherein this resilient coating is the InP material;
Wherein this P type ohmic contact layer is the InGaAs material;
Wherein described superlattice dynode layer is the InAlAs/InAlGaAs periodic structure, its superlattice dynode layer thickness be 230nm between the 300nm, in each cycle, InAlAs thickness is 13nm, InAlGaAs thickness is 8nm.Since superlattice can and can artificially control asymmetry band edge discontinuity between conduction band and valence band value (Δ Ec〉〉 Δ Ev) with discontinuity, make the recruitment of electronics ionization level be far longer than of the contribution of hole energy, thereby obtain big gain-bandwidth product and low-noise performance the hole ionization level.
Wherein described light absorbing zone is lightly doped P type InGaAs, and the double-layer structure of doping content gradual change is adopted in this layer design, the thick InGaAs of epitaxial growth 150nm on the band gap graded bedding at first, and concentration is 4.0 * 10
16Cm
-3, continuing epitaxial growth 650nm then, concentration is 1.0 * 10
16Cm
-3, its effect is to make the absorbed layer electric field slowly increase to the heterojunction boundary place, can reduce the transit time of charge carrier and reduce the tunnelling dark current; Light-receiving adopts limit, side incident mode, utilizes the path of the transversary of device as light absorption, makes that when not changing absorber thickness, device has higher quantum efficiency.
Description of drawings
Fig. 1 is the profile of the near-infrared band single-photon detector of proposition according to the present invention:
Fig. 2 is the near-infrared single photon detector material structure schematic diagram that proposes according to the present invention.
Embodiment
Describe near-infrared single photon detector details in detail below in conjunction with Fig. 1 according to the embodiment of the invention.
N type ohmic contact layer 13, this N type ohmic contact layer is produced on the resilient coating 12, is heavily doped N type InAlAs, its objective is in order to realize good Ohmic contact, and adopting heavy doping is in order to reduce series resistance, to improve the transformation efficiency of device;
Superlattice dynode layer 14, this superlattice dynode layer is produced on the N type ohmic contact layer 13, its effect is to utilize improving the gain bandwidth product of detector and reduce noise with discontinuous and can artificially control asymmetry band edge discontinuity between conduction band and valence band value (Δ Ec〉〉 Δ Ev) of superlattice;
Electric field controls layer 15, this electric field controls layer is produced on superlattice dynode layer 14, and its effect is the Electric Field Distribution of control superlattice dynode layer and absorbed layer, avoids absorbed layer generation avalanche breakdown, reduces the tunnelling dark current, improves the dynode layer Electric Field Distribution.This layer is highly doped P type InAlAs material, and thickness is for being lower than 50nm, and concentration is 3.0 * 10
17Cm
-3
Band gap graded bedding 16, this band gap graded bedding is produced on the electric field controls layer 15, is the InGaAlAs quaternary compound, its act as between mildization absorbed layer and the electric field controls layer can band gap, reduce the accumulation at the heterojunction boundary place of charge carrier, reduce the tunnelling dark current;
P type ohmic contact layer 19, this P type ohmic contact layer is produced on the resilient coating 18, and the doped P-type of attaching most importance to InGaAs its objective is in order to realize good Ohmic contact, and adopting heavy doping is in order to reduce series resistance, to improve the transformation efficiency of device;
The present invention proposes a kind of near-infrared single photon detector, has adopted superlattice structure as dynode layer, and the discontinuity of utilizing the energy band engineering adjustment to be with makes device that gain bandwidth product preferably be arranged, and can reach more than the 100GHz and than the back noise coefficient; Adopt the light absorbing zone of hierarchy can reduce the transit time of charge carrier effectively, reduced the tunnelling dark current.
Involved in the present invention to the near-infrared single photon detector structure can be easy to adopt existing epitaxial device MBE growth, the rate of finished products height of device, favorable repeatability.
Its preparation technology is as follows:
At first photoetching defines the N type ohmic contact regions of device, utilizes wet etching, and to as shown in Figure 2 InAlAs N type ohmic contact layer, the center table top is a P type ohmic contact regions with the corrosion of device two sides, and the corrosive liquid volume proportioning of Cai Yonging is here: H
2SO
4: H
2O
2: H
2O=1:1:40.
So far invention has been described in conjunction with the preferred embodiments.Should be appreciated that those skilled in the art can carry out various other change, replacement and interpolations under the situation that does not break away from the spirit and scope of the present invention.Therefore, scope of the present invention is not limited to above-mentioned specific embodiment, and should be limited by claims.
Claims (12)
1. a near-infrared single photon detector is characterized in that, comprising:
Substrate, this substrate are used for carrying out the epitaxial growth of detector layers of material thereon;
Resilient coating, this resilient coating is produced on the substrate;
N type ohmic contact layer, this N type ohmic contact layer is produced on the resilient coating;
Superlattice dynode layer, this superlattice dynode layer are produced on the N type ohmic contact layer;
The electric field controls layer, this electric field controls layer is produced on the superlattice dynode layer;
The band gap graded bedding, this band gap graded bedding is produced on the electric field controls layer;
Light absorbing zone, this light absorbing zone are produced on the band gap graded bedding;
Resilient coating, this resilient coating is produced on the light absorbing zone;
P type ohmic contact layer, this P type ohmic contact layer is produced on the resilient coating.
2. detector according to claim 1 is characterized in that, described substrate is the InP substrate.
3. detector according to claim 1 and 2 is characterized in that, stating resilient coating is the InP material of non-doping.
4. detector according to claim 1 and 2 is characterized in that, described N type ohmic contact layer is a N type InAlAs material.
5. detector according to claim 1 and 2 is characterized in that, described superlattice dynode layer is the InAlAs/InAlGaAs material.
6. detector according to claim 1 and 2 is characterized in that, described electric field controls layer is a N type InAlAs material.
7. detector according to claim 1 and 2 is characterized in that, described band gap graded bedding is an InAlGaAs quaternary compound material.
8. detector according to claim 1 and 2 is characterized in that, described absorbed layer is the InGaAs material.
9. detector according to claim 1 and 2 is characterized in that, described resilient coating is the InP material.
10. detector according to claim 1 and 2 is characterized in that, described P type ohmic contact layer is the InGaAs material.
11. detector according to claim 1 and 2, it is characterized in that, described superlattice knot dynode layer, by the asymmetry band edge discontinuity between artificial control conduction band and valence band value (Δ Ec〉〉 Δ Ev), make the recruitment of electronics ionization level be far longer than of the contribution of hole energy, thereby obtain big gain-bandwidth product and low-noise performance the hole ionization level.
12. detector according to claim 1 and 2, it is characterized in that, described absorbed layer adopts device and optical fiber coupling place to be positioned at the ambient light injection way of device, and light absorbing zone adopts two-layer concentration gradient structure, thereby effectively improves quantum efficiency and gain-bandwidth product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101798911A CN101465389A (en) | 2007-12-19 | 2007-12-19 | Near-infrared single photon detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101798911A CN101465389A (en) | 2007-12-19 | 2007-12-19 | Near-infrared single photon detector |
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| Publication Number | Publication Date |
|---|---|
| CN101465389A true CN101465389A (en) | 2009-06-24 |
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|---|---|---|---|
| CNA2007101798911A Pending CN101465389A (en) | 2007-12-19 | 2007-12-19 | Near-infrared single photon detector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105637657A (en) * | 2013-08-28 | 2016-06-01 | 华为技术有限公司 | Avalanche photodiode |
| CN108207117A (en) * | 2015-07-28 | 2018-06-26 | 罗切斯特大学 | Low-dark current, the infrared photoelectric detector of resonator enhancing |
-
2007
- 2007-12-19 CN CNA2007101798911A patent/CN101465389A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105637657A (en) * | 2013-08-28 | 2016-06-01 | 华为技术有限公司 | Avalanche photodiode |
| CN105637657B (en) * | 2013-08-28 | 2017-12-15 | 华为技术有限公司 | Avalanche photodide |
| CN108207117A (en) * | 2015-07-28 | 2018-06-26 | 罗切斯特大学 | Low-dark current, the infrared photoelectric detector of resonator enhancing |
| CN108207117B (en) * | 2015-07-28 | 2022-04-19 | 罗切斯特大学 | Low dark current, resonant cavity enhanced infrared photodetector |
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Open date: 20090624 |