CN101453096A - Semiconductor nano wire and micro optical fiber composite structure micro laser - Google Patents
Semiconductor nano wire and micro optical fiber composite structure micro laser Download PDFInfo
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- CN101453096A CN101453096A CNA2008101641869A CN200810164186A CN101453096A CN 101453096 A CN101453096 A CN 101453096A CN A2008101641869 A CNA2008101641869 A CN A2008101641869A CN 200810164186 A CN200810164186 A CN 200810164186A CN 101453096 A CN101453096 A CN 101453096A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000013307 optical fiber Substances 0.000 title claims abstract description 32
- 239000002070 nanowire Substances 0.000 title claims description 37
- 239000002131 composite material Substances 0.000 title claims description 17
- 230000008878 coupling Effects 0.000 claims abstract description 9
- 238000010168 coupling process Methods 0.000 claims abstract description 9
- 238000005859 coupling reaction Methods 0.000 claims abstract description 9
- 239000000835 fiber Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 6
- 229910005542 GaSb Inorganic materials 0.000 claims description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000000280 vitalizing effect Effects 0.000 description 1
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Abstract
The invention discloses a micro laser with a combined structure of semiconductor nanometer wire and micrometer optical fiber. The optical fiber is drawn to be thin in micron dimension; under a microscope, the micrometer optical fiber is operated to form a ring-shaped knot; and the semiconductor nanometer wire is attached to the ring-shaped knot to form the combined structure. The fluorescence of the semiconductor nanometer wire is excited by utilizing the evanescent wave outside the micrometer optical fiber, and when the fluorescence forms resonance in the ring-shaped knot and the laser strength is higher than the threshold value, laser is generated. The pump light is inputted from the end of the tapered optical fiber forming the ring-shaped knot, which is not drawn to be thin, after passing through the ring-shaped knot, is outputted from the other tapered optical fiber in the evanescent wave coupling mode. The laser combines the advantages of high gain of the semiconductor nanometer wire and low loss of the silicon oxide micrometer-nanometer optical fiber; and because the input and the output of the signal are performed by the micrometer optical fiber formed by the tapering of the common optical fiber, the high and stable input-output coupling can be acquired.
Description
Technical field
The present invention relates to semiconductor, micro optical element, system, relate in particular to the composite structure micro laser that a kind of based semiconductor nano wire and micro-ptical-fiber ring-node form.
Background technology
Laser based on semiconductor nanowires such as ZnO, CdS, GaN has caused researcher's extensive concern in recent years.The resonant cavity that is used for realizing the laser generation of laser at present mainly contains F-P chamber, counterfeit annular chamber etc.In these researchs, semiconductor nanowires is not only as gain media, and is the main body of laserresonator.Because the diameter of nano wire is less and the existence of substrate, the evanescent wave in the nano thread structure outside can spread out from the edge of nano wire or be diffused into the substrate, thereby causes stronger loss, the quality factor of restriction resonant cavity, the threshold value of increase laser.For the semiconductor nano laser line generator, also have a difficult problem to be difficult to obtain the coupling of light input and output efficiently exactly in the research, this also is to limit the aspect that it obtains broader applications.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, a kind of semiconductor nanowires and micro-optical fiber composite structure micro laser are provided, the present invention utilizes micron diameter optical fiber to obtain the ring junction resonant cavity, and semiconductor nanowires is attached on the ring junction as gain media, by optical pumping spectrum acquisition laser.
The technical scheme that the present invention solves its technical problem employing is: a kind of semiconductor nanowires and micro-optical fiber composite structure micro laser, and it is mainly made by two optical fiber and 1～5 semiconductor nanowires; It is the low-light fibre of 1.5～4 μ m that one end drawing-down of first optical fiber becomes diameter, breaks into the ring junction that diameter is 500～1000 μ m at microscopically; Semiconductor nanowires is attached on this ring junction, and second fibre-optical drawing becomes tapered fiber, the fine coupling of the tapering point of tapered fiber and low-light.
The invention has the beneficial effects as follows: semiconductor nanowires of the present invention and micro-optical fiber composite structure micro laser have low threshold value and narrow live width, be easy to control and adjusting, light signal is easy to input and output, can regulate Wavelength of Laser by the kind that changes semi-conducting material, wait and reduce threshold value by nanowire diameter, the fine diameter of low-light, coupled zone state in the optimization composite construction.
Description of drawings
Among Fig. 1, (a), (b), (c) be the structural principle schematic diagram of micro laser of the present invention for the stereoscan photograph of three semiconductor nanowires of micro laser subsides of the present invention for the stereoscan photograph of a semiconductor nanowires of micro laser subsides of the present invention.
Among Fig. 2, (a) be by a ZnO nano wire and the fine composite structure micro laser that forms of silica low-light the output spectrum figure under varying strength optical pump pulse spectrum, the high-resolution spectra of output signal light when (b) pump spectrum luminous power is 0.212 μ J/ pulse, the high-resolution spectra of output signal light when (c) pump spectrum luminous power is 0.840 μ J/ pulse.
Fig. 3 composes the change curve of luminous intensity by the output light intensity of a ZnO nano wire and the fine composite structure micro laser that forms of silica low-light with pump;
Among Fig. 4, be to compose the change curve of luminous intensity with pump (a), (b) be typical laser light spectrogram by the output light intensity of three ZnO nano wires and the fine composite structure micro laser that forms of low-light.
Among Fig. 5, (a) be stereoscan photograph, (b) be this composite structure micro laser output light intensity is composed luminous intensity with pump change curve by the subsides line district of the fine composite structure micro laser that forms of many CdS nano wires and low-light.
Embodiment
Semiconductor nanowires of the present invention and micro-optical fiber composite structure micro laser are mainly made by two optical fiber and 1～5 semiconductor nanowires, it is the low-light fibre of 1.5～4 μ m that one end drawing-down of first optical fiber becomes diameter, break into the ring junction that diameter is 500～1000 μ m at microscopically, semiconductor nanowires is attached on this ring junction, second fibre-optical drawing becomes tapered fiber, the fine coupling of tapering point and low-light.
The material of described optical fiber can be general single mode fiber or pure quartzy multimode fiber.Described semiconductor nano linear diameter is less than 1 μ m, and its material can be semiconductors such as ZnO, GaN, CdS, GaSb, CdSe, ZnS.
Light signal is imported from first optical fiber, the outer evanescent wave vitalizing semiconductor nano wire of low-light fibre sends fluorescence, when fluorescence forms the power of resonance and input light during greater than threshold value in ring junction, micro laser sends laser, be coupled by the evanescent wave between semiconductor nanowires and the low-light fibre, fluorescence or laser can be coupled into the low-light fibre again, second tapered fiber output light signal.
Describe the present invention in detail with embodiment with reference to the accompanying drawings below, it is more obvious that purpose of the present invention and effect will become.
Embodiment 1
As shown in Figure 1, use pure quartzy multimode fiber, the drawing by high temperature method is prepared diameter and is about 1.8 μ m low-light fibres, under light microscope, optical fiber is broken into ring junction, ring junction diameter 780 μ m, the pulsed light of input wavelength 355nm pulsewidth 6ns excites, and the ZnO nano wire of a diameter 350nm being grown 25 μ m is attached on the ring junction, then with other tapered fiber coupling output signal light.As shown in Figure 2, its live width 0.04nm calculates Q value about 10
4Free Spectral Range 0.04nm, calculate the about 780 μ m of ring diameter, with the ring diameter that measures is consistent, difference a little between the two might be that the influence of ZnO nano wire causes, because consider to be attached to nano wire on the low-light fibre in the computational process to the influence of the refractive index of low-light fibre.Laser output light intensity with the change curve of pump spectrum luminous intensity as shown in Figure 3, the threshold value of this laser is the every pulse of 0.13 μ J/.Slope variation is clearly arranged near threshold value, and the above output light intensity of threshold value presents good linear relationship with pump spectrum intensity variation.Its material can be semiconductors such as ZnO, GaN, CdS, GaSb, CdSe, ZnS.
Use pure quartzy multimode fiber, the drawing by high temperature method is prepared diameter and is about 3.5 μ m low-light fibres, under light microscope, optical fiber is broken into ring junction, ring junction diameter 728 μ m, the pulsed light of input wavelength 355nm pulsewidth 6ns excites, three diameters are respectively 500nm, and the ZnO nano wire of 480nm and 600nm is attached on the ring junction, then with other tapered fiber coupling output signal light.What Fig. 4 (a) showed is the change curve of laser output light intensity with pump spectrum luminous intensity, and the threshold value of this laser is the every pulse of 0.026 μ g/.Slope variation is clearly arranged near threshold value, and the above output intensity of threshold value presents good linear relationship with the variation of pump spectrum light intensity.Fig. 4 (b) is the laser spectroscopy of this laser.Its material can be semiconductors such as ZnO, GaN, CdS, GaSb, CdSe, ZnS.
Use general single mode fiber, the drawing by high temperature method is prepared diameter and is about 2.7 μ m low-light fibres, under light microscope, optical fiber is broken into ring junction, ring junction diameter 860 μ m, the pulsed light of input wavelength 450nm pulsewidth 0.5ns excites, many CdS nano wires between diameter is from 220nm to 340nm are attached on the ring junction, with other tapered fiber coupling output signal light, on spectrometer, detect then.What Fig. 5 (a) showed is the stereoscan photograph that pastes the line district.What Fig. 5 (b) showed is the change curve of laser output light intensity with pump spectrum luminous intensity, and the threshold value of this laser is the every pulse of 0.026 μ J/.Slope variation is clearly arranged near threshold value, and the above output light intensity of threshold value presents good linear relationship with the variation of pump spectrum light intensity.Its material can be semiconductors such as ZnO, GaN, CdS, GaSb, CdSe, ZnS.
The foregoing description is used for the present invention that explains, rather than limits the invention, and in the protection range of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (4)
1, a kind of semiconductor nanowires and micro-optical fiber composite structure micro laser is characterized in that, it is mainly made by two optical fiber and 1～5 semiconductor nanowires.It is the low-light fibre of 1.5～4 μ m that one end drawing-down of first optical fiber becomes diameter, breaks into the ring junction that diameter is 500～1000 μ m at microscopically.Semiconductor nanowires is attached on this ring junction.Second fibre-optical drawing becomes tapered fiber, the fine coupling of the tapering point of tapered fiber and low-light.
According to described semiconductor nanowires of claim 1 and micro-optical fiber composite structure micro laser, it is characterized in that 2, described optical fiber can be general single mode fiber or pure quartzy multimode fiber.
According to described semiconductor nanowires of claim 1 and micro-optical fiber composite structure micro laser, it is characterized in that 3, described semiconductor nano linear diameter is less than 1 μ m.
According to described semiconductor nanowires of claim 1 and micro-optical fiber composite structure micro laser, it is characterized in that 4, the material of described semiconductor nanowires can be semiconductors such as ZnO, GaN, CdS, GaSb, CdSe, ZnS.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101641869A CN101453096A (en) | 2008-12-29 | 2008-12-29 | Semiconductor nano wire and micro optical fiber composite structure micro laser |
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| CNA2008101641869A CN101453096A (en) | 2008-12-29 | 2008-12-29 | Semiconductor nano wire and micro optical fiber composite structure micro laser |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101902013A (en) * | 2010-07-13 | 2010-12-01 | 浙江大学 | Semiconductor nanoribbon-based annular cavity laser |
| CN102412503A (en) * | 2011-09-20 | 2012-04-11 | 浙江大学 | Single-longitudinal-mode laser for coupling by utilizing two semiconductor nano wires and preparation method |
| CN103178434A (en) * | 2013-03-04 | 2013-06-26 | 华南理工大学 | Wavelength-tunable miniature single-mode optical fiber laser |
| CN105244757A (en) * | 2015-11-13 | 2016-01-13 | 重庆大学 | Micro laser taking side edge polishing and grinding optical fiber as carrier and transmission channel and preparation method and application thereof |
| CN105633794A (en) * | 2016-02-29 | 2016-06-01 | 浙江大学 | Semiconductor nanowire laser with bidirectional irreversible tuned output wavelengths |
| CN109751515A (en) * | 2019-02-21 | 2019-05-14 | 安文霞 | It is a kind of for detecting the fiber mix waveguide of oil well Extraction rate |
-
2008
- 2008-12-29 CN CNA2008101641869A patent/CN101453096A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101902013A (en) * | 2010-07-13 | 2010-12-01 | 浙江大学 | Semiconductor nanoribbon-based annular cavity laser |
| CN101902013B (en) * | 2010-07-13 | 2012-11-14 | 浙江大学 | Semiconductor nanoribbon-based annular cavity laser |
| CN102412503A (en) * | 2011-09-20 | 2012-04-11 | 浙江大学 | Single-longitudinal-mode laser for coupling by utilizing two semiconductor nano wires and preparation method |
| CN103178434A (en) * | 2013-03-04 | 2013-06-26 | 华南理工大学 | Wavelength-tunable miniature single-mode optical fiber laser |
| CN103178434B (en) * | 2013-03-04 | 2016-01-20 | 华南理工大学 | A kind of Wavelength-tunable miniature single-mode optical fiber laser |
| CN105244757A (en) * | 2015-11-13 | 2016-01-13 | 重庆大学 | Micro laser taking side edge polishing and grinding optical fiber as carrier and transmission channel and preparation method and application thereof |
| CN105244757B (en) * | 2015-11-13 | 2018-07-17 | 重庆大学 | It is a kind of based on side-polished fiber be carrier and transmission channel micro laser and its preparation method and application |
| CN105633794A (en) * | 2016-02-29 | 2016-06-01 | 浙江大学 | Semiconductor nanowire laser with bidirectional irreversible tuned output wavelengths |
| CN105633794B (en) * | 2016-02-29 | 2019-02-05 | 浙江大学 | A kind of semiconductor nano laser line generator of output wavelength bidirectional reversible tuning |
| CN109751515A (en) * | 2019-02-21 | 2019-05-14 | 安文霞 | It is a kind of for detecting the fiber mix waveguide of oil well Extraction rate |
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