CN101452816B - 一种离子注入的监控方法 - Google Patents
一种离子注入的监控方法 Download PDFInfo
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- CN101452816B CN101452816B CN2007101715707A CN200710171570A CN101452816B CN 101452816 B CN101452816 B CN 101452816B CN 2007101715707 A CN2007101715707 A CN 2007101715707A CN 200710171570 A CN200710171570 A CN 200710171570A CN 101452816 B CN101452816 B CN 101452816B
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CN2007101715707A CN101452816B (zh) | 2007-11-30 | 2007-11-30 | 一种离子注入的监控方法 |
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CN2007101715707A CN101452816B (zh) | 2007-11-30 | 2007-11-30 | 一种离子注入的监控方法 |
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CN101452816A CN101452816A (zh) | 2009-06-10 |
CN101452816B true CN101452816B (zh) | 2010-06-02 |
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CN2007101715707A Expired - Fee Related CN101452816B (zh) | 2007-11-30 | 2007-11-30 | 一种离子注入的监控方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11791141B2 (en) | 2020-07-29 | 2023-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for residual gas analysis |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104157593B (zh) * | 2013-05-14 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 尘埃检测系统及尘埃检测方法 |
CN107579027B (zh) * | 2017-09-06 | 2020-10-16 | 上海华力微电子有限公司 | 一种离子注入机钨金属污染的监控方法 |
CN109300778B (zh) * | 2018-09-30 | 2021-10-15 | 上海华力集成电路制造有限公司 | 离子注入方法 |
CN109781049A (zh) * | 2019-01-22 | 2019-05-21 | 上海华虹宏力半导体制造有限公司 | 离子注入机台反应腔内污染物的监测方法 |
CN111312572B (zh) * | 2020-02-25 | 2023-03-31 | 上海华虹宏力半导体制造有限公司 | 离子注入机台的监控方法 |
CN113984788B (zh) * | 2021-12-24 | 2022-03-15 | 北京凯世通半导体有限公司 | 一种通过光学检测仪器对超低温离子注入设备监测的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1325131A (zh) * | 1995-07-17 | 2001-12-05 | 艾克塞利斯技术公司 | 具有原位除去污物的离子束注入机 |
CN1977352A (zh) * | 2004-06-02 | 2007-06-06 | 瓦里安半导体设备联合公司 | 用于差错检测和工艺控制的等离子体离子注入监视系统 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1325131A (zh) * | 1995-07-17 | 2001-12-05 | 艾克塞利斯技术公司 | 具有原位除去污物的离子束注入机 |
CN1977352A (zh) * | 2004-06-02 | 2007-06-06 | 瓦里安半导体设备联合公司 | 用于差错检测和工艺控制的等离子体离子注入监视系统 |
Non-Patent Citations (2)
Title |
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JP特开平10-208686A 1998.08.07 |
JP特开平7-105901A 1995.04.21 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11791141B2 (en) | 2020-07-29 | 2023-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for residual gas analysis |
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CN101452816A (zh) | 2009-06-10 |
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Effective date of registration: 20111121 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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