CN101452816A - 一种离子注入的监控方法 - Google Patents
一种离子注入的监控方法 Download PDFInfo
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- CN101452816A CN101452816A CNA2007101715707A CN200710171570A CN101452816A CN 101452816 A CN101452816 A CN 101452816A CN A2007101715707 A CNA2007101715707 A CN A2007101715707A CN 200710171570 A CN200710171570 A CN 200710171570A CN 101452816 A CN101452816 A CN 101452816A
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CN2007101715707A CN101452816B (zh) | 2007-11-30 | 2007-11-30 | 一种离子注入的监控方法 |
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CN2007101715707A CN101452816B (zh) | 2007-11-30 | 2007-11-30 | 一种离子注入的监控方法 |
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CN101452816A true CN101452816A (zh) | 2009-06-10 |
CN101452816B CN101452816B (zh) | 2010-06-02 |
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CN2007101715707A Expired - Fee Related CN101452816B (zh) | 2007-11-30 | 2007-11-30 | 一种离子注入的监控方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104157593B (zh) * | 2013-05-14 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 尘埃检测系统及尘埃检测方法 |
CN107579027A (zh) * | 2017-09-06 | 2018-01-12 | 上海华力微电子有限公司 | 一种离子注入机钨金属污染的监控方法 |
CN109300778A (zh) * | 2018-09-30 | 2019-02-01 | 上海华力集成电路制造有限公司 | 离子注入方法 |
CN109781049A (zh) * | 2019-01-22 | 2019-05-21 | 上海华虹宏力半导体制造有限公司 | 离子注入机台反应腔内污染物的监测方法 |
CN111312572A (zh) * | 2020-02-25 | 2020-06-19 | 上海华虹宏力半导体制造有限公司 | 离子注入机台的监控方法 |
CN113984788A (zh) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | 一种通过光学检测仪器对超低温离子注入设备监测的方法 |
TWI777291B (zh) * | 2020-07-29 | 2022-09-11 | 台灣積體電路製造股份有限公司 | 用於檢測處理腔室狀況的方法和系統以及計算機可讀媒介 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US5554854A (en) * | 1995-07-17 | 1996-09-10 | Eaton Corporation | In situ removal of contaminants from the interior surfaces of an ion beam implanter |
US7878145B2 (en) * | 2004-06-02 | 2011-02-01 | Varian Semiconductor Equipment Associates, Inc. | Monitoring plasma ion implantation systems for fault detection and process control |
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2007
- 2007-11-30 CN CN2007101715707A patent/CN101452816B/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104157593B (zh) * | 2013-05-14 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 尘埃检测系统及尘埃检测方法 |
CN107579027A (zh) * | 2017-09-06 | 2018-01-12 | 上海华力微电子有限公司 | 一种离子注入机钨金属污染的监控方法 |
CN107579027B (zh) * | 2017-09-06 | 2020-10-16 | 上海华力微电子有限公司 | 一种离子注入机钨金属污染的监控方法 |
CN109300778A (zh) * | 2018-09-30 | 2019-02-01 | 上海华力集成电路制造有限公司 | 离子注入方法 |
CN109781049A (zh) * | 2019-01-22 | 2019-05-21 | 上海华虹宏力半导体制造有限公司 | 离子注入机台反应腔内污染物的监测方法 |
CN111312572A (zh) * | 2020-02-25 | 2020-06-19 | 上海华虹宏力半导体制造有限公司 | 离子注入机台的监控方法 |
CN111312572B (zh) * | 2020-02-25 | 2023-03-31 | 上海华虹宏力半导体制造有限公司 | 离子注入机台的监控方法 |
TWI777291B (zh) * | 2020-07-29 | 2022-09-11 | 台灣積體電路製造股份有限公司 | 用於檢測處理腔室狀況的方法和系統以及計算機可讀媒介 |
CN113984788A (zh) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | 一种通过光学检测仪器对超低温离子注入设备监测的方法 |
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CN101452816B (zh) | 2010-06-02 |
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Effective date of registration: 20111121 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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