CN101447537A - 固态发光元件 - Google Patents
固态发光元件 Download PDFInfo
- Publication number
- CN101447537A CN101447537A CNA2007102026684A CN200710202668A CN101447537A CN 101447537 A CN101447537 A CN 101447537A CN A2007102026684 A CNA2007102026684 A CN A2007102026684A CN 200710202668 A CN200710202668 A CN 200710202668A CN 101447537 A CN101447537 A CN 101447537A
- Authority
- CN
- China
- Prior art keywords
- type
- emitting element
- solid
- semiconductor layer
- bond course
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000000694 effects Effects 0.000 claims description 21
- 238000004020 luminiscence type Methods 0.000 claims description 20
- 239000002105 nanoparticle Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- 238000005984 hydrogenation reaction Methods 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010930 yellow gold Substances 0.000 description 1
- 229910001097 yellow gold Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
本发明涉及一种固态发光元件。所述固态发光元件包括一透明导电基板，一设置在所述透明导电基板上的第一型束缚层，一设置在所述第一型束缚层上的发光活性层，一设置在所述发光活性层上的第二型束缚层，一设置在所述第二型束缚层上的电极，所述透明导电基板所用材料为氢化的碳化硅，所述透明导电基板与所述电极用于与外部电源电性连接。所述材料为氢化的碳化硅的透明导电基板可将所述固态发光元件发光时所产生的热及时有效地传导出去，从而使得所述固态发光元件保持较高的量子效率。
Description
技术领域
本发明涉及一种固态发光元件，特别是一种发光二极管。
背景技术
目前，发光二极管(Light Emitting Diode，LED)作为一种固态发光元件，其具有光质佳(也即光源输出的光谱)及发光效率高等特性而逐渐取代冷阴极荧光灯(Cold CathodeFluorescent Lamp，CCFL)作为照明装置的发光元件，具体可参见Michael S.Shur等人在文献Proceedings of the IEEE，Vol.93，No.10(2005年10月)中发表的“Solid-StateLighting：Toward Superior Illumination”一文。
一般的发光二极管(Light Emitting Diode，LED)包括发光结构及正负电极，所述发光结构包括：一N型束缚层(Cladding layer)，一P型束缚层及一设置在所述N型束缚层与P型束缚层之间的未掺杂的活性层(Active layer)，所述正电极设置在所述P型束缚层上，所述负电极设置在所述N型束缚层上。所述发光二极管一般可发出特定波长的光，例如可见光，但是发光二极管所接收能量的大约80~90％被转换为热量，其余的能量才被真正转换为光能。当发光二极管的温度达到70度以上时，发光二极管中的量子效率会明显的降低，所以发光二极管的散热效率是保证其正常运作的重要因素。有鉴于此，提供一种散热效率较高的固态发光元件实为必要。
发明内容
下面将以实施例说明一种散热效率较高的固态发光元件。
一种固态发光元件，其包括一透明导电基板，一设置在所述透明导电基板上的第一型束缚层，一设置在所述第一型束缚层上的发光活性层，一设置在所述发光活性层上的第二型束缚层，一设置在所述第二型束缚层上的电极，所述透明导电基板所用材料为氢化的碳化硅。
相对于现有技术，所述固态发光元件中的透明导电基板所用材料为氢化的碳化硅，利用氢化的碳化硅的高热传导率可将所述固态发光元件发光时所产生的热及时有效地传导出去，从而使得所述固态发光元件保持较高的量子效率。利用氢化的碳化硅的高电导率可使所述透明导电基板直接作为一电极使用，使得由所述发光活性层发出的光子可直接经由所述透明导电基板在没有遮挡物的情况下射出，从而提高了光取出效率。
附图说明
图1是本发明实施例提供的发光二极管的剖面图。
具体实施方式
下面结合附图对本发明固态发光元件作进一步的详细说明。
为了便于理解，以下将以本发明实施例提供的固态发光元件为发光二极管为例进行说明。请参见图1，一发光二极管10包括：一透明导电基板11，一设置在所述透明导电基板11上的N型束缚层12，一设置在所述N型束缚层12上的发光活性层13，一设置在所述发光活性层13上的P型束缚层14，一设置在所述P型束缚层14上的电极15。所述N型束缚层12，发光活性层13及P型束缚层14组成一发光结构。
所述透明导电基板11所用材料为氢化的碳化硅(SiC:H)，由于所述氢化的碳化硅是一种电导率及热传导率均较高的材料，故在所述发光二极管10发光时所产生的热能够及时有效地经由所述透明导电基板11传导出去，从而使得所述发光二极管10保持较高的量子效率，并且所述透明导电基板11可作为另一电极与所述电极15与一外部电源电性连接以向所述发光结构提供电能。在本实施例中，由所述发光结构发出的光子可直接经由所述透明导电基板11在没有遮挡物的情况下射出，从而提高了光取出效率。不用在透明导电基板11上形成电极也可以使所述发光二极管10的制程简化、成本降低。
所述N型束缚层12为含有纳米粒子16的N型半导体层。所述N型半导体层所用材料可选自N型氮化镓(n-type GaN)、N型磷化铟(n-type InP)、N型磷化铟镓(n-type InGaP)及N型磷化铝镓铟(n-type AlGaInP)中之一。在本实施例中，所述N型束缚层12是由硅掺杂的氮化镓组成。
所述纳米粒子16的材料为硅氧化物、硅氮化物、铝氧化物、镓氧化物或硼氮化物。在本实施例中，所述纳米粒子16为二氧化硅纳米粒子，其粒径范围选自20~200纳米。
所述发光活性层13所用材料为氮化铟镓(InGaN)、砷化铝镓(AlGaAs)等，其中具有单个量子阱结构(Single Quantum Well)或多个量子阱结构(Multi-Quantum Well)。
所述P型束缚层14为含有纳米粒子16的P型半导体层。所述P型半导体层所用材料可选自P型氮化铝镓(p-type AlGaN)、P型砷化铝镓(p-type AlGaAs)等。在此，可以通过在氮化铝镓中掺杂镁或氢来得到P型半导体层。
所述P型半导体层中掺杂的纳米粒子16所用材料同样可选自硅氧化物、硅氮化物、铝氧化物、镓氧化物或硼氮化物。可以理解的是，所述纳米粒子16在所述N型束缚层12及所述P型束缚层14中的浓度分布可根据实际需要进行设定。
所述电极15所用材料为镍(Ni)，金(Au)，镍金合金(Ni/Au)，钛(Ti)，铝(Al)，钛铝合金(Ti/Al)，铜(Cu)，银(Ag)，铝铜合金(Al/Cu)，或银铜合金(Ag/Cu)等金属材料。
在本实施例中，可以利用金属有机物化学气相沉积法(Metal Organic Chemical VaporDeposition，MOCVD)或等离子体增强化学气相沉积法(Plasma Enhanced Chemical VaporDeposition，PECVD)将所述N型束缚层12及所述P型束缚层14分别形成在所述透明导电基板11及所述发光活性层13上，利用磁控溅射法将所述电极15沉积在所述P型束缚层14上。
由于所述N型束缚层12为含有纳米粒子16的N型半导体层，所述P型束缚层14为含有纳米粒子16的P型半导体层，所述N型半导体层及所述P型半导体层中含有纳米粒子，从而可以阻止所述N型束缚层12与所述发光活性层13之间、所述P型束缚层14与所述发光活性层13之间所形成的位错移动(Dislocation Motion)，以增进发光活性层13的晶体性质，进而提高了所述发光结构的量子效率，即所述发光活性层13中的光子转换效率更高。另外，所述N型束缚层12与P型束缚层14中的纳米粒子可改变其所在的N型半导体层或P型半导体层的晶格常数(Lattice Constant)，减少了N型束缚层12与P型束缚层14自身的晶格畸变(LatticeStrain)，从而有利于减小所述N型束缚层12与所述发光活性层13之间，以及所述P型束缚层14与所述发光活性层13之间的应力，有利于提高所述发光二极管10内部的量子效率。
此外，所述本发明实施例提供的发光二极管10中的发光结构具有较高量子效率的同时，在所述发光结构中并不需要量子点(Quantum Dot)，从而使得所述发光二极管10与传统发光二极管相比更适于量产。
另外，本领域技术人员还可于本发明精神内做其它变化，例如：所述P型束缚层14生长在所述透明导电基板11上，所述发光活性层13磊晶生长在所述P型束缚层14上，而所述N型束缚层12则生长在所述发光活性层13上，此时所述发光活性层13同样夹设在含有纳米粒子的P型半导体层与含有纳米粒子的N型半导体层之间，故同样可以使本发明实施例提供的发光二极管具有较好的量子效率。所以，这些变化或提供结构原理与所述发光二极管基本相同的其它固态发光元件，只要其不偏离本发明的技术效果，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。
Claims (8)
- 【权利要求1】一种固态发光元件，其包括一透明导电基板，一设置在所述透明导电基板上的第一型束缚层，一设置在所述第一型束缚层上的发光活性层，一设置在所述发光活性层上的第二型束缚层，一设置在所述第二型束缚层上的电极，其特征在于：所述透明导电基板所用材料为氢化的碳化硅。
- 【权利要求2】如权利要求1所述的固态发光元件，其特征在于：所述第一型束缚层与所述第二型束缚层分别为含有纳米粒子的第一型半导体层与含有纳米粒子的第二型半导体层。
- 【权利要求3】如权利要求2所述的固态发光元件，其特征在于：所述纳米粒子的材料为硅氧化物、硅氮化物、铝氧化物、镓氧化物或硼氮化物。
- 【权利要求4】如权利要求3所述的固态发光元件，其特征在于：所述纳米粒子的粒径为20~200纳米。
- 【权利要求5】如权利要求2所述的固态发光元件，其特征在于：所述第一型半导体层为N型半导体层，所述第二型半导体层为P型半导体层。
- 【权利要求6】如权利要求5所述的固态发光元件，其特征在于：所述N型半导体层所用材料为N型氮化镓，N型磷化铟，N型磷化铟镓或N型磷化铝镓铟。
- 【权利要求7】如权利要求5所述的固态发光元件，其特征在于：所述P型半导体层所用材料为P型氮化铝镓或P型砷化铝镓。
- 【权利要求8】如权利要求5所述的固态发光元件，其特征在于：所述发光活性层中具有单个量子阱结构或多个量子阱结构。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007102026684A CN101447537A (zh) | 2007-11-26 | 2007-11-26 | 固态发光元件 |
| US12/192,039 US20090134380A1 (en) | 2007-11-26 | 2008-08-14 | Solid-state lighting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007102026684A CN101447537A (zh) | 2007-11-26 | 2007-11-26 | 固态发光元件 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101447537A true CN101447537A (zh) | 2009-06-03 |
Family
ID=40668924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007102026684A Pending CN101447537A (zh) | 2007-11-26 | 2007-11-26 | 固态发光元件 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20090134380A1 (zh) |
| CN (1) | CN101447537A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102447070A (zh) * | 2010-10-09 | 2012-05-09 | 中国计量学院 | 一种光子晶体结构量子点有机发光二极管发光装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8383432B2 (en) * | 2008-08-07 | 2013-02-26 | Sharp Laboratories Of America, Inc. | Colloidal-processed silicon particle device |
| US8723159B2 (en) | 2011-02-15 | 2014-05-13 | Invenlux Corporation | Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same |
| EP2734995B1 (en) * | 2011-07-27 | 2017-11-29 | Grote Industries, LLC | Method and system for flexible illuminated devices having edge lighting utilizing light active sheet material with integrated light emitting diode |
| CN103078051A (zh) * | 2011-10-26 | 2013-05-01 | 富士迈半导体精密工业（上海）有限公司 | 发光二极管晶粒 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
| US6555403B1 (en) * | 1997-07-30 | 2003-04-29 | Fujitsu Limited | Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same |
| US6998281B2 (en) * | 2000-10-12 | 2006-02-14 | General Electric Company | Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics |
| CN1790119A (zh) * | 2004-12-15 | 2006-06-21 | 鸿富锦精密工业（深圳）有限公司 | 背光模组及液晶显示装置 |
| US7265374B2 (en) * | 2005-06-10 | 2007-09-04 | Arima Computer Corporation | Light emitting semiconductor device |
-
2007
- 2007-11-26 CN CNA2007102026684A patent/CN101447537A/zh active Pending
-
2008
- 2008-08-14 US US12/192,039 patent/US20090134380A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102447070A (zh) * | 2010-10-09 | 2012-05-09 | 中国计量学院 | 一种光子晶体结构量子点有机发光二极管发光装置 |
| CN102447070B (zh) * | 2010-10-09 | 2014-05-14 | 中国计量学院 | 一种光子晶体结构量子点有机发光二极管发光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090134380A1 (en) | 2009-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI278995B (en) | Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element | |
| TW200933935A (en) | LED chip thermal management and fabrication methods | |
| CN1473363A (zh) | 具有无镓层的iii族氮化物发光器件 | |
| CN101640241B (zh) | 一种高出光率SiC衬底LED芯片及其制备方法 | |
| CN107833945B (zh) | GaN基垂直LED结构及其制备方法 | |
| CN102270633A (zh) | 大功率倒装阵列led芯片及其制造方法 | |
| CN101540361B (zh) | 硅衬底上生长的铝镓铟磷发光二极管的制备方法 | |
| CN104810455A (zh) | 紫外半导体发光器件及其制造方法 | |
| CN101447537A (zh) | 固态发光元件 | |
| CN101447536A (zh) | 固态发光元件 | |
| CN102104233A (zh) | 一种高反射率的垂直结构发光二极管芯片及其制备方法 | |
| US8729590B2 (en) | Solid state lighting devices having side reflectivity and associated methods of manufacture | |
| CN100369280C (zh) | 发光半导体器件及其形成方法 | |
| CN104103723B (zh) | 氮化镓发光二极管及其制作方法 | |
| Rahman | Solid-state lighting with wide band gap semiconductors | |
| Feng et al. | Efficiency improvement of GaN-on-silicon thin-film light-emitting diodes with optimized via-like n-electrodes | |
| CN214378484U (zh) | 一种基于GaN外延片结构 | |
| CN1619847A (zh) | Ⅲ－ⅴ族高亮度复合颜色或者白光的发光二极管 | |
| Lee et al. | Output power enhancement of vertical-injection ultraviolet light-emitting diodes by GaN-free and surface roughness structures | |
| CN2593371Y (zh) | 氮化镓基led的发光装置 | |
| CN1157805C (zh) | 半导体发光二极管及其制备方法 | |
| TWI287878B (en) | Light-emitting diodes and method of manufacturing same using metal bonding technique | |
| TWI399866B (zh) | 固態發光元件 | |
| CN206422089U (zh) | 生长在玻璃衬底上的GaN薄膜 | |
| Horng et al. | High‐power GaN light‐emitting diodes with patterned copper substrates by electroplating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20090603 |