CN101442089A - Method for reinforcing zinc oxide film blue light emission - Google Patents
Method for reinforcing zinc oxide film blue light emission Download PDFInfo
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- CN101442089A CN101442089A CNA2007101777898A CN200710177789A CN101442089A CN 101442089 A CN101442089 A CN 101442089A CN A2007101777898 A CNA2007101777898 A CN A2007101777898A CN 200710177789 A CN200710177789 A CN 200710177789A CN 101442089 A CN101442089 A CN 101442089A
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Abstract
The invention discloses a method for enhancing ZnO film blue-ray emission. The method relates to semiconductor technology, and comprises the following steps: preparing a ZnO/Ag composite thin-film; accelerating recombination of interband emission of ZnO by using resonant coupling between plasmon on the surface of Ag and interband emission of the ZnO; and coupling plasmon into light by using the film surface of Ag with certain roughness to achieve the aim of enhancing the ZnO film blue-ray emission. Comparing photoluminescence performance of the ZnO/Ag composite thin-film with that of a ZnO film, a discovery that the participation of the plasmon on the surface of the Ag can improve intensity of the interband emission of the ZnO by 50 times is made; at the same time, the method can effectively suppress green light emission caused by the flaw on the ZnO film. The method not only can enhance the ZnO blue light emission, but also can be extensively applied to other semiconductor luminous materials and other types of luminophors.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of enhancing zinc oxide (ZnO) film blue light method for transmitting.
Technical background
Zinc oxide (ZnO) is a kind of important II-VI family broad stopband, direct gap semiconductor material, its energy gap is 3.37eV under the room temperature, exciton bind energy is 60meV, be considered to another the novel photoelectric material after ZnSe, GaN, it is the optimal candidate material of short-wave long light-emitting diode and semiconductor laser, in information storage and demonstration, optical communication, the semiconductor white-light illuminating, high-tech area such as medical science and biology has purposes widely, is the focus of current semi-conducting material science and device research.People can use methods such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD) and magnetron sputtering to prepare quality ZnO film preferably at present, and its luminescence generated by light and electroluminescence spectrum also all have report.But the characteristics such as high index of refraction that defective of ZnO own and semi-conducting material are total, make that the zno-based blue light-emitting diode be about to move towards market is the same with the light-emitting diode of other commercialization, face the not high problem of luminous efficiency, replacing current fluorescent light fully meets difficulty, also will hinder the development of zno-based light-emitting diode and laser practicability, the blue light luminous efficiency that therefore improves ZnO is the essential step in the complete practicability of zno-based luminescent device, the high efficiency.
Utilize the resonance coupling between metal surface phasmon and the luminescent material emission light, luminescent material interband radiation recombination speed is accelerated; Simultaneously phasmon is coupled into light, can reaches the photoemissive purpose of enhancing by metallic film surface with certain roughness.In recent years, people have begun to attempt utilizing this method to strengthen semi-conducting material and device luminous efficiency, after introducing coarse Ag film on the InGaN quantum well, surface phasmon strengthens the luminous photoluminescent intensity that causes and has improved 14 times as Okamoto etc.
Summary of the invention
The object of the present invention is to provide a kind of method that strengthens the ZnO film blue emission, too much to solve current preparation ZnO film defective, cause the not high problem of blue emission efficient.
For achieving the above object, technical solution of the present invention is:
A kind of enhancing zinc oxide film blue light method for transmitting, it utilizes the resonance coupling between the emission of Ag surface phasmon and ZnO interband by preparation ZnO/Ag compound structure film, and ZnO interband radiation recombination speed is accelerated; Simultaneously phasmon is coupled into light,, suppresses the green emission that defective causes in the ZnO film simultaneously effectively to reach the blue emission that strengthens the ZnO film interband by Ag film surface with certain roughness.
Described enhancing zinc oxide film blue light method for transmitting, its described preparation ZnO/Ag compound structure film is to use three target radio frequency magnetron sputtering systems to prepare the ZnO/Ag compound structure film, and it comprises the steps:
1) be substrate with Si (001) single-chip;
2) with 99.99% high-purity Ag target sputtering target as metal A g thin film deposition;
3) with high-purity ZnO ceramic target of 99.99% sputtering target as the ZnO film deposition;
4) adopt the ZnO/Ag double-decker, ground floor deposition Ag, second layer deposition ZnO.
Described enhancing zinc oxide film blue light method for transmitting, the device three target radio frequency magnetron sputtering systems of its described growth ZnO/Ag compound structure film, its background vacuum pressure is 1 * 10
-5Pa, each magnetic controlled sputtering target be each parameter in the control material preparation process independently.
Described enhancing zinc oxide film blue light method for transmitting, they are described 4 years old) in the step, the spacing d of the substrate-target during deposition growing is 50-80mm.
Described enhancing zinc oxide film blue light method for transmitting, they are described 4 years old) in the step, during ground floor deposition Ag, underlayer temperature is a room temperature; Working gas is 99.99% high-purity argon, working gas pressure P
Ag=1.0-2.0Pa; Sputtering power W
Ag=20-80W, the used time t of deposition Ag
Ag=5-40min.
Described enhancing zinc oxide film blue light method for transmitting, they are described 4 years old) in the step, during second layer deposition ZnO, underlayer temperature T
ZnO=400 ℃; Working gas is 99.99% high-purity argon, working gas pressure P
ZnO=1.0-2.0Pa; Sputtering power W
ZnO=40-90W, the used time t of deposition ZnO
ZnO=30-80min.
The inventive method utilizes this Ag surface phasmon to strengthen mechanism, the blue emission intensity of the interband of ZnO film can be improved about 50 times.This method has characteristics such as cost is low, simple to operate, widely applicable, practical, can not only strengthen the ZnO blue emission, and can be widely used in the luminous element of other semiconductive luminescent materials and other type.
Description of drawings
Fig. 1 is atomic force microscope (AFM) picture that deposits the Ag film of 10min according to the embodiment of the invention on Si (001) substrate;
Fig. 2 is the reflectance spectrum that deposits the Ag film of 10min according to the embodiment of the invention on Si (001) substrate;
Fig. 3 is X-ray diffraction (XRD) spectrum according to the ZnO/Ag compound structure film of embodiment of the invention preparation;
Fig. 4 is the comparison schematic diagram according to the ZnO/Ag compound structure film of embodiment of the invention preparation and ZnO reference thin film light at room temperature photoluminescence (PL) spectrum.
Embodiment
Embodiment:
Growth technique:
1) the used equipment of growth is three target radio frequency magnetron sputtering systems, comprises Sample Room, settling chamber, vacuum system, radio-frequency power supply and matching system, substrate heating and temperature-controlling system, sample rotary system etc.;
2) with high-purity ZnO ceramic target of 99.99% high pure metal Ag target and 99.99% as sputtering target;
3) above-mentioned target is packed on the radio frequency target platform in the settling chamber;
4) Si (001) substrate is placed in the sample holder, adjusts the distance of target and substrate, be 80mm;
5) the sample room background vacuum pressure is 1 * 10
-5Pa;
6) the Ag film of at first growing, its process conditions are: working gas is high-purity argon (Ar) gas, and operating pressure is 1.0-2.0Pa, and radio frequency sputtering power is 20-80W, and underlayer temperature is a room temperature, and sputtering time is 10min; In order to obtain uniform Ag film
,Sample holder rotation between depositional stage; The AFM photo and the reflectance spectrum of Ag film are seen Fig. 1 and Fig. 2 respectively;
7) then the sample holder is rotated to ZnO target top, at Ag film surface deposition ZnO film, its process conditions are: working gas is 99.99% argon (Ar) gas, operating pressure is 1.0Pa, radio frequency sputtering power is 80W, and underlayer temperature is 400 ℃, and sputtering time is 60min;
8) behind the growth ending, when treating that furnace temperature is reduced to room temperature, take out sample.
Growth result:
According to above-mentioned process conditions, on Si (001) substrate, ZnO/Ag compound structure film and ZnO reference thin film have been deposited.The XRD result of ZnO/Ag compound structure film (Fig. 3) demonstrates the ZnO film of grown on Si (001) substrate polymorph A g and (0002) orientation.Utilize luminescence generated by light system (excitation wavelength 325nm) to test the PL spectrum (see figure 4) of ZnO/Ag compound structure film and ZnO reference thin film, the result shows that the ZnO/Ag compound structure film is that the blue light emitting at 378nm place significantly strengthens at wavelength, compare its luminous intensity with the ZnO reference thin film and improve 50 times nearly, the defect luminescence at 550nm place is inhibited simultaneously.
The significant result that the present invention compared with prior art has:
Adopt magnetron sputtering or other physical deposition method to prepare simple ZnO film, because mistake Many defectives cause the poor-performing of ZnO interband blue emission. Our employing is easy to suitability for industrialized production The ZnO/Ag compound structure film of magnetically controlled sputter method preparation utilizes metal A g surface phasmon And the resonance coupling between the emission of ZnO interband, the probability of the interband radiation recombination of increase ZnO; With The time, utilize the natural roughness of Ag film surface of magnetron sputtering preparation to realize phasmon is coupled into This function of light, thus effectively raise intensity and the efficient of ZnO film blue emission, and effectively Ground has suppressed the green emission that defective causes in the ZnO film. In addition, metal A g also can be as ZnO Electroluminescent electrode, therefore, the participation of metal A g can be played the effect that realizes that electricity injects, again Can improve the luminous efficiency of ZnO. The method can Effective Raise ZnO light emitting diode and semiconductor The luminescent properties of laser instrument provides one to solve ZnO and the low luminous efficiency of other semi-conducting material Feasible way is laid a good foundation for realizing zno-based high speed, high efficiency light-emitting device.
Claims (6)
1. one kind strengthens the zinc oxide film blue light method for transmitting, it is characterized in that, by preparation ZnO/Ag compound structure film, utilizes the resonance coupling between the emission of Ag surface phasmon and ZnO interband, and ZnO interband radiation recombination speed is accelerated; Simultaneously phasmon is coupled into light,, suppresses the green emission that defective causes in the ZnO film simultaneously effectively to reach the blue emission that strengthens the ZnO film interband by Ag film surface with certain roughness.
2. enhancing zinc oxide film blue light method for transmitting according to claim 1 is characterized in that, described preparation ZnO/Ag compound structure film is to use three target radio frequency magnetron sputtering systems to prepare the ZnO/Ag compound structure film, and it comprises the steps:
1) be substrate with Si (001) single-chip;
2) with 99.99% high-purity Ag target sputtering target as metal A g thin film deposition;
3) with high-purity ZnO ceramic target of 99.99% sputtering target as the ZnO film deposition;
4) adopt the ZnO/Ag double-decker, ground floor deposition Ag, second layer deposition ZnO.
3. enhancing zinc oxide film blue light method for transmitting according to claim 2 is characterized in that, the device three target radio frequency magnetron sputtering systems of described growth ZnO/Ag compound structure film, and its sample room background vacuum pressure is 1 * 10
-5Pa, each magnetic controlled sputtering target be each parameter in the control material preparation process independently.
4. enhancing zinc oxide film blue light method for transmitting according to claim 2 is characterized in that described 4) in the step, the spacing d of the substrate-target during deposition growing is 50-80mm.
5. enhancing zinc oxide film blue light method for transmitting according to claim 2 is characterized in that described 4) in the step, during ground floor deposition Ag, underlayer temperature is a room temperature; Working gas is a high-purity argon, working gas pressure p
Ag=1.0-2.0Pa; Sputtering power W
Ag=20-80W, the used time t of deposition Ag
Ag=5-40min.
6. enhancing zinc oxide film blue light method for transmitting according to claim 2 is characterized in that described 4) in the step, during second layer deposition ZnO, underlayer temperature T
ZnO=400 ℃; Working gas is a high-purity argon, working gas pressure p
ZnO=1.0-2.0Pa; Sputtering power W
ZnO=40-90W, the used time t of deposition ZnO
ZnO=30-80min.
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| CN2007101777898A CN101442089B (en) | 2007-11-21 | 2007-11-21 | Method for reinforcing zinc oxide film blue light emission |
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