CN101441402A - Method for detecting best focus of exposure machine - Google Patents
Method for detecting best focus of exposure machine Download PDFInfo
- Publication number
- CN101441402A CN101441402A CNA2007100942629A CN200710094262A CN101441402A CN 101441402 A CN101441402 A CN 101441402A CN A2007100942629 A CNA2007100942629 A CN A2007100942629A CN 200710094262 A CN200710094262 A CN 200710094262A CN 101441402 A CN101441402 A CN 101441402A
- Authority
- CN
- China
- Prior art keywords
- pitch angle
- resolution chart
- exposure machine
- best focus
- focus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a method for detecting the best focus of an exposure machine. One cross section of a line-shaped part is randomly taken from a photoresist pattern after exposure and development and serves as a test pattern. The method comprises the following steps: (1) measuring a plurality of the test patterns and working out the bottom tilt angles of the test patterns; (2) working out the average value of the tilt angles; and (3) working out the position of the best focus according to the linear relation between the angles and the positions of focus points. As the method only measures a few line width values and is capable of quickly acquiring the position of the best focus through the relation between the tilt angles and focal distance curves, the method has the advantages of short cycle, a small amount of measured data, and low cost.
Description
Technical field
The present invention relates to be used in a kind of semiconductor preparing process of integrated circuit the method for quick detection best focus of exposure machine.
Background technology
The method of measuring best focus of exposure machine in present semiconductor technology is to utilize the matrix of the focal length that exposes to the sun to measure the live width of different focal then, makes Poisson curve (Bossung Curve) decision best focal point.This method cycle is long, and measurement data is many, and needs fortification cost height again.
Summary of the invention
Technical matters to be solved by this invention provides a kind of method that is used for detecting best focus of exposure machine, and it can the quick detection pinpointed focus, has the advantage that the cycle is short, measurement data is few, cost is little.
In order to solve above technical matters, the invention provides a kind of method that is used for detecting best focus of exposure machine, comprising:
(1) measures a plurality of described resolution charts, calculate the pitch angle of each resolution chart bottom;
(2) mean value at the described a plurality of pitch angle of calculating;
(3) according to the linear relationship of described pitch angle and focus point position, the focus point position of calculating optimum.
Because the present invention only measures the line width values of minority, utilize the relation of pitch angle and focal length curve can obtain the best focal point position fast, have the advantage that the cycle is short, measurement data is few, cost is little.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is a resolution chart synoptic diagram of the present invention;
Fig. 2 is the resolution chart synoptic diagram that focal length is positioned at the best focal point position;
Fig. 3 is the resolution chart synoptic diagram of focal length less than the best focal point position;
Fig. 4 is the resolution chart synoptic diagram of focal length greater than the best focal point position;
Fig. 5 is the linear relation curve in embodiment of the invention medium dip angle and focus point position.
Embodiment
Being in the photoresist pattern behind exposure imaging as shown in Figure 1, getting an xsect figure of linear part, is a resolution chart with this figure.As shown in Figure 2, when exposure machine was positioned at the exposure of best focal point position, this resolution chart was a rectangle; As shown in Figure 3, when expose less than the best focal point position in the exposure machine position, this resolution chart is isosceles trapezoid; As shown in Figure 4, when expose greater than the best focal point position in the exposure machine position, this resolution chart is an isosceles trapezoid.Along with the change of exposure focal length, the pitch angle of this resolution chart bottom is along with variation as can be seen, and the general scope that changes in pitch angle when being the right angle at the pitch angle, shows that this exposure machine is positioned on the best focus point at 85 degree～95 degree.
Measure top live width, the bottom live width of resolution chart respectively, utilize following formula can calculate the pitch angle of resolution chart bottom then:
ctgθ＝(Bottom?CD-Top?CD)/2H；
Wherein, θ is the pitch angle of described resolution chart bottom; H is the thickness of photoresist; Top CD is the top live width of described resolution chart; Bottom CD is the bottom live width of described resolution chart.
The deviation of exposure machine exposure position and best focal point can be calculated in addition according to the angle of inclination, and then best focus point position can be obtained.As Fig. 5 is pitch angle of the present invention and the linear relation curve in focus point position, θ=K* Δ f+B; Wherein, θ is the pitch angle of resolution chart; Δ f is the focal position deviation of exposure machine; COEFFICIENT K and B are constant, and COEFFICIENT K is-1 in the present embodiment, and the value of B is 90, promptly θ=-Δ f+90.This coefficient can obtain this empirical parameter through experiment generally by technological parameter (photoresistance value, backing material etc.) decision in the reality, and then obtains linear dependence.
The performing step of a specific embodiment of the present invention comprises:
(1) in the photoresist pattern behind exposure imaging, gets 5 resolution charts.Measure top live width, the bottom live width of each resolution chart, then according to formula: ctg θ=(Bottom CD-TopCD)/2H; θ is the pitch angle of resolution chart bottom; H is the thickness of photoresist; Top CD is the top live width of resolution chart; Bottom CD is the bottom live width of resolution chart.Calculate the tiltangle 1～θ 5 of each resolution chart bottom respectively.
(2) mean value at a plurality of pitch angle of calculating, θ=(θ 1+ θ 2+ θ 3+ θ 4+ θ 5)/5;
(3) according to the average slope angle θ that obtains and the linear relationship of focus point position, θ=-Δ f+90, can draw the value of exposure machine focal position deviation delta f, the position according to exposure machine focal position deviation delta f adjustment exposure machine can obtain best focus point position then.
Claims (4)
1, a kind of method that is used for detecting best focus of exposure machine is characterized in that, in the photoresist pattern behind exposure imaging, any one xsect of getting linear part is a resolution chart; Comprise the steps:
(1) measures a plurality of described resolution charts, calculate the pitch angle of each resolution chart bottom;
(2) mean value at the described a plurality of pitch angle of calculating;
(3) according to the linear relationship of described pitch angle and focus point position, the focus point position of calculating optimum.
2, the method that is used for the quick detection best focus of exposure machine as claimed in claim 1, it is characterized in that, the pitch angle of each resolution chart bottom of the described calculating of step (1), comprise described each resolution chart measured its top live width, bottom live width respectively, utilize following formula to calculate described pitch angle then:
ctgθ＝(Bottom?CD-Top?CD)/2H；
Wherein, θ is the pitch angle of described resolution chart bottom; H is the thickness of photoresist; Top CD is the top live width of described resolution chart; Bottom CD is the bottom live width of described resolution chart.
3, the method that is used for the quick detection best focus of exposure machine as claimed in claim 1 or 2 is characterized in that, the scope at described pitch angle is 85 degree～95 degree.
4, the method that is used for the quick detection best focus of exposure machine as claimed in claim 1 is characterized in that, the pitch angle that step (4) is described and the linear relationship of focus point position are:
θ＝K*Δf+B；
Wherein, θ is the pitch angle of described dot pattern; Δ f is the focal position deviation of exposure machine; COEFFICIENT K and B are constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100942629A CN101441402A (en) | 2007-11-22 | 2007-11-22 | Method for detecting best focus of exposure machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100942629A CN101441402A (en) | 2007-11-22 | 2007-11-22 | Method for detecting best focus of exposure machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101441402A true CN101441402A (en) | 2009-05-27 |
Family
ID=40725884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100942629A Pending CN101441402A (en) | 2007-11-22 | 2007-11-22 | Method for detecting best focus of exposure machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101441402A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102236262A (en) * | 2010-05-07 | 2011-11-09 | 无锡华润上华半导体有限公司 | Method for determining best focal length of photoetching machine |
| CN102386115A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Testing method and testing device for manufacturing process of semiconductor |
| CN102436149A (en) * | 2011-08-29 | 2012-05-02 | 上海华力微电子有限公司 | Method for confirming photoetching process window |
| CN102495533A (en) * | 2011-11-24 | 2012-06-13 | 上海宏力半导体制造有限公司 | Method for detecting focal position of exposure device and system thereof |
| CN102955378A (en) * | 2012-11-12 | 2013-03-06 | 上海集成电路研发中心有限公司 | Morphology characterization method for photoresist |
| CN103065992A (en) * | 2012-12-14 | 2013-04-24 | 上海集成电路研发中心有限公司 | Semiconductor surface structure side wall characterization method |
| CN105549346A (en) * | 2014-10-29 | 2016-05-04 | 合肥芯硕半导体有限公司 | Method for acquiring optimal focal plane distance of laser direct imaging equipment |
| CN110752148A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Method for manufacturing patterned sapphire substrate by using photosensitive polysiloxane |
-
2007
- 2007-11-22 CN CNA2007100942629A patent/CN101441402A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102236262A (en) * | 2010-05-07 | 2011-11-09 | 无锡华润上华半导体有限公司 | Method for determining best focal length of photoetching machine |
| CN102386115A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Testing method and testing device for manufacturing process of semiconductor |
| CN102386115B (en) * | 2010-09-01 | 2013-07-03 | 无锡华润上华半导体有限公司 | Testing method and testing device for manufacturing process of semiconductor |
| CN102436149A (en) * | 2011-08-29 | 2012-05-02 | 上海华力微电子有限公司 | Method for confirming photoetching process window |
| CN102495533A (en) * | 2011-11-24 | 2012-06-13 | 上海宏力半导体制造有限公司 | Method for detecting focal position of exposure device and system thereof |
| CN102495533B (en) * | 2011-11-24 | 2015-08-26 | 上海华虹宏力半导体制造有限公司 | Detect the method and system of exposure sources focal position |
| CN102955378A (en) * | 2012-11-12 | 2013-03-06 | 上海集成电路研发中心有限公司 | Morphology characterization method for photoresist |
| CN102955378B (en) * | 2012-11-12 | 2016-08-24 | 上海集成电路研发中心有限公司 | Photoresist morphology characterization method |
| CN103065992A (en) * | 2012-12-14 | 2013-04-24 | 上海集成电路研发中心有限公司 | Semiconductor surface structure side wall characterization method |
| CN105549346A (en) * | 2014-10-29 | 2016-05-04 | 合肥芯硕半导体有限公司 | Method for acquiring optimal focal plane distance of laser direct imaging equipment |
| CN110752148A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Method for manufacturing patterned sapphire substrate by using photosensitive polysiloxane |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101441402A (en) | Method for detecting best focus of exposure machine | |
| CN101375127B (en) | Method and measuring device for measuring translation of surface | |
| JP4065817B2 (en) | Exposure process monitoring method | |
| JP5134804B2 (en) | Distortion calibration of scanning electron microscope and scanning electron microscope images | |
| US20050100205A1 (en) | Method for measuring three dimensional shape of a fine pattern | |
| JP4512395B2 (en) | Exposure process monitoring method and apparatus | |
| US7619753B2 (en) | Method for measuring dimensions and optical system using the same | |
| JP5515432B2 (en) | 3D shape measuring device | |
| JP2006038779A5 (en) | ||
| CN102288108A (en) | Position measuring system | |
| JP2007227193A (en) | Charged particle beam device | |
| JPWO2019173171A5 (en) | ||
| CN102313515B (en) | Three-dimensional digital image correlation (3D-DIC) correcting method | |
| JP5891311B2 (en) | Pattern measurement apparatus, evaluation method for polymer compound used in self-organized lithography, and computer program | |
| US20130150998A1 (en) | Managing apparatus of semiconductor manufacturing apparatus and computer program | |
| CN104103543A (en) | Wafer defect size correction method | |
| JP2011222705A (en) | Method for manufacturing imprint device and imprint substrate | |
| JP5880134B2 (en) | Pattern measuring method and pattern measuring apparatus | |
| JP4902806B2 (en) | Standard material for calibration | |
| JP6398950B2 (en) | Device for photographing the surface of a plate-like body | |
| CN1332423C (en) | Method to predict and identify defocus wafers and system thereof | |
| CN101546129B (en) | Method for monitoring exposure device by adopting side wall angles | |
| CN103794451B (en) | The method and apparatus of the electron beam state of monitoring scanning electron microscopy | |
| CN111123662B (en) | Method and device for acquiring overlay error measurement data | |
| US9804107B2 (en) | Pattern measurement device and computer program for evaluating patterns based on centroids of the patterns |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20090527 |