CN101437628A - Technique for reducing backside particles - Google Patents
Technique for reducing backside particles Download PDFInfo
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- CN101437628A CN101437628A CNA2005800426198A CN200580042619A CN101437628A CN 101437628 A CN101437628 A CN 101437628A CN A2005800426198 A CNA2005800426198 A CN A2005800426198A CN 200580042619 A CN200580042619 A CN 200580042619A CN 101437628 A CN101437628 A CN 101437628A
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Abstract
A technique for reducing backside particles is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for reducing backside particles. The apparatus may comprise a delivery mechanism configured to supply a cleaning substance to a platen, wherein the platen is housed in a process chamber. The apparatus may also comprise a control unit configured to cause the process chamber to reach a first pressure level, cause the cleaning substance to be supplied to a surface of the platen, and cause the process chamber to reach a second pressure level, thereby removing contaminant particles, together with the cleaning substance, from the surface of the platen.
Description
The cross reference of related application
[0001] present patent application requires the priority of No. the 60/635524th, the U.S. Provisional Patent Application of application on December 13rd, 2004, and it is incorporated in this specification as reference integral body.
Technical field
[0002] disclosure relates generally to semiconductor manufacturing facility, and, relate more specifically to reduce the technology of backside particles.
Background technology
[0003] manufacturing of microelectronic product, such as microprocessor, integrated circuit (IC) and other microdevice, need low-level pollutant (such as, dust, aerosol particle or chemical vapors) clean environment.Usually by semiconductor manufacturing facility being placed in the clean room and the dirt of control appliance inside provides such cleaning ambient.Along with dwindling day by day of modern microelectronics characteristic size, the negligible dirt particle of past quantity can cause harmful effect to production output and device performance now.
[0004] in order to make minimum contamination, the state space in the semiconductor manufacturing facility often remains on high or ultra high vacuum levels.However,, still can there be undesired pollutant, and can pollutes handled semiconductor wafer within it even at high relatively vacuum level.For example, in the automated system that is equipped with electrostatic chuck (ESC), dirt particle can be produced by ESC itself because of normal wearing and tearing.In addition, dirt particle also can pass to ESC from other source, the automatic other parts of wafer processing process normally, such as, pick-up arm liner, locator liner, passage box (pass-through cassette) and buffer robot end-effector.These dirt particles can be delivered to semiconductor wafer, are delivered on the back usually.Therefore, these dirt particles often are called backside particles (BSP).
[0005] well-known is by using such as TexWipe
TM609 the semiconductor wipe wiping platen surface of prewetting cleans the ESC wafer platform.However, such clean method often improves but not reduction BSP level.In an experiment, the BSP level that the ESC of discovery 200mm was had before cleaning is 17,870 particles.Using TexWipe
TMAfter the 609 cleaning wiping cloth cleaning, the BSP level rises to 70,000 particles.The raising of BSP level is attributable to the interaction between cleaning wiping cloth surface texture and the ESC platen surface microstructure.In similar experiment, to TexWipe
TMAlpha 10 and MiraWipe
TMWait other semiconductor wipes to assess, and found similar result.
[0006] in addition, open vacuum chamber when manually the method for Wipe assembly often requires each the cleaning, and this final vacuum must be rebuild vacuum.This process is not only consuming time, and has significantly increased running cost.
[0007] also be well-known with deionization (DI) water and the manual clean vacuum process chamber of semiconductor wipes.For example, can use with the manual thoroughly wiping process chamber of the semiconductor wipes of DI water adhesional wetting.Alternatively, can spray DI water by hand in process chamber, then be manual wiping step, with eliminating particle.However, people also do not attempt using DI sailor worker to spray the ESC platen surface, and reason is to fear to damage in the electrostatic clamp process ESC face coat of contact semiconductor wafer.
[0007A] in view of this provides the dirt particle sweep-out method that overcomes above-mentioned deficiency and shortcoming to enjoy popular confidence.
Summary of the invention
[0008] the invention discloses a kind of technology that reduces backside particles.In a concrete exemplary embodiment, this technology can be used as the device that reduces backside particles and realizes.This device can comprise conveying mechanism, disposes this conveying mechanism to provide cleaning substance to wafer platform, and wherein wafer platform is placed in the process chamber.This device also can comprise control module, dispose this control module so that process chamber reaches first stress level, making provides cleaning substance to platen surface, and makes process chamber reach second stress level, thereby dirt particle is disposed from platen surface together with cleaning substance.
[0009], in process chamber, sets up second stress level and make a part of cleaning substance distillation to I haven't seen you for ages, thereby dirt particle is disposed from platen surface according to the others of this concrete exemplary embodiment.
[0010] according to the other aspect of this concrete exemplary embodiment, wafer platform can be the electrostatic chuck with composite surface coating.
[0011] according to the additional aspect of this concrete exemplary embodiment, device can comprise clean wafer transferring to wafer platform, transmit the wafer transferring mechanism of clean wafer from wafer platform then, thereby contaminant particle is disposed from platen surface.
[0012] according to this concrete exemplary embodiment on the other hand, conveying mechanism can comprise nozzle and driver part.Can the configuration driven assembly nozzle is positioned at the position of next-door neighbour's platen surface.And control module can be disposed so that nozzle sprays the surface of wafer platform with cleaning substance.In addition, nozzle can be an articulated nozzle.Nozzle can be positioned at about six inches position, platen surface top.Further, control module can make driver part that nozzle is swept and whip platen surface, thereby the basic coating uniformly of cleaning substance is applied from the teeth outwards.Alternatively, control module can make driver part come mobile wafer platform to stroke motion with respect to sweeping of nozzle, and the basic coating uniformly of cleaning substance is coated on the surface.
[0013] on the other hand according to this concrete exemplary embodiment, conveying mechanism can comprise the flat member that is positioned at a bit of distance in platen surface top, this distance is very little, thereby the space between flat elements and the platen surface is sprawled from the teeth outwards cleaning substance.
[0014] still according to this concrete exemplary embodiment on the other hand, cleaning substance comprises one or more materials of selecting from the tabulation of being made up of following material: DI water, alcohol, carbon dioxide, ionized dry air and ionization drying nitrogen.
[0015] in another concrete exemplary embodiment, this technology can be used as the method that reduces backside particles and realizes.This method can comprise wafer platform is positioned at step in the process chamber.This method also can comprise the step that process chamber is disposed to first stress level.This method can further comprise the step that cleaning substance is provided to platen surface.This method can additionally comprise with pump process chamber is drawn into second stress level, thereby dirt particle is disposed from platen surface together with cleaning substance.
[0016] according to the others of this concrete exemplary embodiment, can make a part of cleaning substance distillation at least with pump suction process chamber, thereby dirt particle is disposed from platen surface.
[0017] according to the other aspect of this concrete exemplary embodiment, wafer platform can be the electrostatic chuck with composite surface coating.
[0018] according to the additional aspect of this concrete exemplary embodiment, this method further Bao Dahan is stroked pattern cleaning substance is sprayed onto step on the platen surface to sweep, thereby the basic coating uniformly of cleaning substance is coated on the surface.
[0019] according to this concrete exemplary embodiment on the other hand, cleaning substance can comprise deionized water, and deionization water smoke can be sprayed on the platen surface, so that use the deionized water drop covering surfaces.
[0020] according to this concrete exemplary embodiment on the other hand, cleaning substance can comprise carbon dioxide, and can with dry ice spray wafer platform the surface, dry ice comprises solid carbon dioxide particle.
[0021] still according to this concrete exemplary embodiment on the other hand, cleaning substance can comprise ionized gas, and can spray platen surface with ionized gas.
[0022] exemplary embodiment of the present disclosure shown in hereinafter inciting somebody to action with reference to the accompanying drawings makes a more detailed description the disclosure.Although hereinafter be that reference example embodiment is described the disclosure, should be appreciated that the disclosure is not limited thereto.The one of ordinary skilled in the art who accepts instruction and guide herein will appreciate that within the scope of the present disclosure described in this specification and the disclosure to its very practical extra enforcement, change and embodiment and other use field.
Description of drawings
[0023] in order to help more completely to understand the disclosure, description, in the accompanying drawings, same numbering refers to same element.These accompanying drawings should not be construed as the restriction disclosure, and only to be intended to be exemplary.
[0024] block diagram shown in Figure 1 shows the example system that is used to reduce backside particles according to disclosure embodiment.
[0025] block diagram shown in Figure 2 shows another example system that is used to reduce backside particles according to disclosure embodiment.
[0026] flow chart shown in Figure 3 shows the illustrative methods that is used for reducing from electrostatic chuck backside particles according to disclosure embodiment.
[0027] block diagram shown in Figure 4 shows the example system that is used to reduce backside particles according to disclosure embodiment.
[0028] block diagram shown in Figure 5 shows another example system that is used to reduce backside particles according to disclosure embodiment.
The specific embodiment
[0029] in order to solve and the relevant the problems referred to above of existing clean method that are used for semiconductor manufacturing facility, embodiment of the present disclosure has introduced the In-Situ Cleaning technology, and it reduces the backside particles that passes to semiconductor wafer effectively.One or more cleaning substances can be offered the surface of the wafer platform (or other assembly) that is positioned at process chamber.When process chamber is evacuated, can dispose together with the contaminant particle on the platen surface cleaning substance from wafer platform (or assembly) surface.The cleaning that will concentrate on wafer platform is below described.However, be to be appreciated that this explanation described exemplary embodiment that is right can be suitable for other assembly in the clean semiconductor manufacturing equipment easily.
[0030] with reference to figure 1, shown in block diagram show the example system 100 that is used to reduce backside particles according to disclosure embodiment.System 100 can comprise process chamber 102, and for example, it can be coupled to turbine pump 120 and mechanical pump 122.Vavuum pump (120 and 122) can be separately or is jointly made process chamber 102 reach the vacuum level of expectation.Process chamber 102 can be the part of semiconductor manufacturing facility, and can play one or more semiconductor processes functions, such as, chemical vapor deposition (CVD), physical vapor deposition (PVD), ion inject or plasma etching.
[0031] wafer platform 104 that can hold one or more wafers can be placed in the process chamber 102.Wafer platform 104 can be the part of automatic processing of wafers parts, and automatically the processing of wafers parts can be to the chamber (not shown) transmission wafer that closes on, or the chamber transmission wafer from closing on.Purpose for automatic processing of wafers though wafer platform 104 can comprise the electrostatic chuck that has the composite surface coating usually, should be appreciated that and also can use the non-electrostatic chuck that has or do not have the composite surface coating.
[0032] system 100 also can comprise control module 106, and control module 106 can help many other assemblies of control system 100.System 100 can further comprise the driver part 108 of being controlled and be coupled to spray arm 110 by control module 106.End at spray arm 110 can have nozzle 112.Cleaning substance source 114 can be coupled to spray arm 110 by pipeline 116, and cleaning substance can be delivered to nozzle 112 by spray arm 110, and nozzle 112 can be hinged.
[0033] cleaning substance source 114 can comprise one or more cleaning substances that is generally liquid state or gaseous state.Preferred cleaning substance should be gas or the liquid that obtains and store or handle easily easily in clean room.Also can carry a small amount of preferred cleaning substance, and can from vacuum chamber, dispose its residual vapor easily.Typical cleaning substance can include but not limited to: DI water, alcohol, carbon dioxide (for example, have solid CO
2The dry ice of particle), ionized dry air or ionization drying nitrogen etc.Remained on by electrostatic force can be very effective aspect the particle on the platen surface removing for ionized dry air or nitrogen.For example, these ionized gas can be by the AirForce that can obtain from Ion Systems company
TMThe ionization air pressure gun produces.According to some embodiment, utilize the combination of two or more cleaning substances to realize that desired result is favourable.For example, can the mixture of DI water and alcohol be flowed to nozzle 112 by spray arm 110.The combination of these two or more cleaning substances also can be called as a kind of cleaning substance (that is, with single form).
[0034] spray arm 110 can be telescopic shown in Fig. 1, and perhaps it can be to be driven and by the parts of other any kind of control module 106 controls by driver part 108.By moving of spray arm 110, nozzle 112 can be positioned at position with respect to the expectation on the surface of wafer platform 104, nozzle 112 can be hinged.Usually, nozzle 112 is positioned at the position that is close to wafer platform 104 and is positioned at wafer platform 104 tops.According to an embodiment, nozzle 112 can be positioned at about six inches position, top of wafer platform 104.
[0035] nozzle 112 can spray controlled airflow or aerosol, liquid or solid particle.That is to say that the flow velocity and the sprinkler discharge density of the cleaning substance by nozzle 112 can be controlled, for example, by control module 106 controls.Also can adjust spray arm 110 and nozzle 112, so that the incidence angle of expectation to be provided on the surface of wafer platform 104.When spraying, it is static that nozzle 112 can keep.Alternatively, spray arm 110 can extend across the surperficial moving nozzle 112 of wafer platform 104 with predetermined pattern, one or more dimensions.By nozzle 112 controlled flow velocity and the sprinkler discharge densities that move and regulated, the surface of wafer platform 104 can spray with selected cleaning substance.
[0036] when expectation clean wafer platform 104, process chamber 102 can be discharged into approx atmospheric press (or the stress level of rough vacuum state, its depend on the thermodynamic properties of cleaning substance and such as the condition of vacuum draw flow velocity, evacuated time and temperature etc.), and wafer platform 104 can be placed on home.Control module 106 can be automatically or is made nozzle 112 be positioned at the top of wafer platform 104 when being operated by operating personnel and selected cleaning substance is sprayed onto on the platen surface.After this, process chamber 102 can be evacuated to vacuum level (for example, the rough vacuum, or 10 of expectation
-7-10
-6The high vacuum of holder).Along with cleaning substance distillation (promptly leaving the surface of wafer platform 104 with steam), the dirt particle on the platen surface can be eliminated out process chamber 102 or be scavenged on the process chamber bottom surface.Next, wafer platform 104 (and/or process chamber 102) can carry out degasification with the clean wafer with low granule number alternatively.Clean wafer can temporarily be passed to wafer platform 104, returns box then, can repeat this process further to reduce dirt particle from platen surface.
[0037] driver part 108, spray arm 110, nozzle 112, cleaning substance source 114 and pipeline 116 can be generically and collectively referred to as " conveying mechanism ".Where be installed in respect to " process chamber " 102 as for conveying mechanism, very big flexibility can be arranged.As shown in fig. 1, a big chunk and the control module 106 of conveying mechanism (comprising spray arm 110) can be installed in the outside.Configurable spray arm 110 is so that it enters process chamber 102 through being enough to for seal channel or otch that spray arm 110 moves.Alternatively, at least a portion of conveying mechanism can be installed in the process chamber, and Fig. 2 shows one of them example.
[0038] block diagram shown in Figure 2 shows the example system 200 that is used to reduce backside particles according to of the present disclosure.
[0039] compare with system 100, system 200 similarly comprises the process chamber 202 that is coupled to turbine pump 220 and mechanical pump 222.Wafer platform 204 can be placed in the inside of process chamber 202.System 200 also can comprise control module 206 and be coupled to nozzle 212 driver parts 208 by spray arm 210, and nozzle 212 can be hinged.Different with system 100 shown in Figure 1, the driver part 208 of system 200 is installed in the inside of process chamber 202, is positioned at the corner of process chamber 202 or other background.Cleaning substance source 214 can be coupled to spray arm 210 by reach through hole in process chamber 202 walls or otch 216.Because control module 206 is installed in the outside, so reach through hole or otch 216 also can hold the electric controling line of going to driver part 208 from control module 206.
[0040] flow chart shown in Figure 3 shows the illustrative methods that is used for reducing from electrostatic chuck backside particles according to disclosure embodiment.The ESC wafer platform can be in the inside of process chamber or similar vacuum chamber.Before can beginning in semiconductor processes is operated in process chamber, this exemplary method steps carries out, can behind the semiconductor processes end-of-job, carry out, can between different semiconductor processes work, carry out, or can carry out any time at other as required.In addition, can repeat these method steps to obtain the cleaning result of expectation.
[0041] in step 302, there is not wafer above the ESC wafer platform, for example, can be fastened on " safety " position.It should be appreciated by those skilled in the art that wafer platform can also be fastened on other position.
[0042] in step 304, process chamber can be discharged into approximate atmospheric pressure.
[0043] in step 306, spreader nozzle can be positioned the top of ESC wafer platform.Can adjust spreader nozzle so that mist to be provided.The adjustment of spray nozzle flow rate and sprinkler discharge density is depended on usually character and the desired ESC platen surface and the interaction between the cleaning substance of the cleaning substance that intend to spray.
[0044] in step 308, nozzle can be the DI water mist spray to the surface of ESC wafer platform.When spraying, nozzle can stroke motion and strides the surface of ESC wafer platform and move to sweep, so that the even covering surfaces of DI water droplet.Alternatively, spreader nozzle can be hinged can not be hinged also, it can be positioned at fixing position, and wafer platform can stroke motion and moves below nozzle to sweep.Can spray the mixture of DI water and alcohol or other solvent, rather than spray DI water.Alternatively, can use ionized dry air or ionization drying nitrogen to spray platen surface.Usually, nozzle can perhaps also can provide cleaning substance to shift eliminating particle by momentum to the ESC surface with strong relatively speed to provide cleaning substance with to surperficial coated to the ESC surface at a slow speed.In addition, spray cleaning substance and needn't cover the ESC platen surface fully.When expecting or in case of necessity, can spraying and clean the surface portion of appointment by the accurately mobile and/or orientation of spreader nozzle (and/or wafer platform).
[0045] according to an embodiment of the present disclosure, dry ice (CO
2) also can be used as cleaning substance.Dry ice can comprise solid CO
2Particle, it can be effectively disposed dirt particle or clearance of particles is fallen by other surface interaction from the ESC platen surface.Can pass through liquid CO
2Convert solid CO to
2And CO
2Gas is made CO
2Snow.Liquid CO
2Can be delivered to spreader nozzle by the high cleanliness pipeline.In spreader nozzle, CO
2Liquid can expand through the aperture, and converts solid CO to
2Particle and CO
2The mixture of gas.After this, for clean purpose, can aim at the ESC platen surface to this mixture.
[0046] in step 310, process chamber can be evacuated to the vacuum level of expectation.Gas bleeding helps to remove the cleaning substance residue in the process chamber, so that dirt particle is taken away from the ESC platen surface.
[0047] in step 314, the ESC wafer platform can be used the clean wafers degasification alternatively, with its granule number of further minimizing.
[0048] according to embodiment of the present disclosure, above-mentioned clean method can reduce dirt particle from the ESC wafer platform significantly.In one embodiment, the granule number that had before cleaning of the 200mmESC with composite surface coating is approximately 24,933.Using as described above after the DI water mist spray cleans this 200mm ESC, it is about 11,374 that amounts of particles reduces to, and reduced more than 50%.In another experiment, find that the amounts of particles that 300mm ESC is had is approximately 10,597 after utilizing the manual cleaning of semiconductor wipes.However, utilizing after the DI water mist spray cleans same 300m ESC, only remaining about 2,816 particles are compared with conventional cleaning procedure, and it has realized that particle reduces about 70%.
[0049] cleaning substance can also offer platen surface by wafer platform itself, rather than sprays wafer platform from the top.Block diagram shown in Figure 4 shows the example system 400 of utilizing this alternative method to reduce backside particles.
[0050] system 400 can comprise the process chamber 404 that is coupled to turbine pump 420 and mechanical pump 422.Wafer platform 404 can be placed in the process chamber 402.Wafer platform 404 can have at least one with the feed-through channel 412 of coupling pipeline 410 coupling.Feed-through channel 412 and pipeline 410 can be the parts of existing coolant delivery system (not shown), and this system is used to cool off wafer platform 404 and any wafer on it.In the top surface of wafer platform 404, one or more gas passage also can be arranged to hold cold gas.
[0051] control module 406 can control come from cleaning substance source 414, through piping 416 and 410 and the cleaning substance supply of going to wafer platform 404 surfaces by feed-through channel 412.
[0052] in a single day supplies, just wish to control cleaning substance wafer platform 404 lip-deep flowing and distribution by feed-through channel 412.Correspondingly, before cleaning substance flows, flat member 408 can be positioned at the position of next-door neighbour's wafer platform 404 surfaces.Flat member 408 can have smooth substantially or otherwise with the surperficial suitable lower surface of wafer platform 404.According to an embodiment, flat elements 408 can be the object of semiconductor wafer or similar shape.Flat member 408 can be positioned at a small distance place apart from wafer platform 404 (for example, 0.02-0.5mm), thereby can form small gap 411 between the surface of the lower surface of flat member 408 and wafer platform 404.Small gap 411 can help cleaning substance is spread on the surface of wafer platform 404, thereby improves surface interaction.Gas passage in the platen surface can help the even distribution of cleaning substance.
[0053] when cleaning substance is fed to platen surface or afterwards, process chamber 402 can be evacuated to the vacuum level that needs, cleaning substance be disposed from wafer platform 404 together with dirt particle helping.
[0054] as mentioned above, the cleaning substance conveying mechanism can utilize existing coolant delivery system.Block diagram shown in Figure 5 shows the example system 500 that is used to reduce backside particles, and wherein add-on subsystem 50 can merge with existing gas cooled and ballasting system.
[0055] in system 500, wafer platform 502 can be installed on inclination/rotary part 506.Gas cooled and ballasting system can comprise ballast box 520, gas system 522, ballast valve 516, air bearing 512, pipeline 510, gas cooled valve 508 and feed-through channel 504, and they are used for cooling off semiconductor wafer jointly.
[0056] add-on subsystem 50 can comprise one or more cleaning substances source (for example, cleaning substance 1, cleaning substance 2 and cleaning substance 3).These cleaning substance sources can be coupled to two way valve 514 by on/off valve 518 and pipeline 517.Rely on two way valve 514, add-on subsystem 50 can be utilized existing gas cooled equipment.Add-on subsystem 50 can further comprise the control module 515 that can be coupled to the control module (not shown) that is used for gas system.Control module 515 can be regulated valve 514 and the valve 518 in the subsystem 50, and valve 508 and 516, thus control cleaning substance or refrigerating gas flowing to wafer platform 502.
[0057] the scope of the present disclosure is not limited to the described specific embodiment of this specification.Undoubtedly, except this specification is described, by above description and accompanying drawing, other various embodiment of the present disclosure and to one skilled in the art can be apparent to change of the present disclosure.Thereby these other embodiment and change are intended to fall within the scope of the present invention.In addition, though be for concrete purpose, in concrete environment, under the concrete background of implementing, in this manual the disclosure be described, but those of ordinary skills will appreciate that: serviceability of the present disclosure is not limited thereto, and can be in many environment, for many purposes are carried out the disclosure valuably.Correspondingly, should be according to understanding the claim that is proposed as described full breadth of the present disclosure of this specification and spirit.
Claims (35)
1. device that reduces backside particles, described device comprises:
Conveying mechanism, it is configured to wafer platform cleaning substance is provided, and wherein said wafer platform is placed in the process chamber; With
Control module, it is configured to:
Make described process chamber reach first stress level,
Make described cleaning substance be provided for described platen surface, and
Make described process chamber reach second stress level, thereby dirt particle is disposed from the described surface of described wafer platform together with described cleaning substance.
2. device according to claim 1 is wherein set up described second stress level and is made a part of cleaning substance distillation at least, thereby described dirt particle is disposed from the described surface of described wafer platform in described process chamber.
3. device according to claim 1, wherein said wafer platform are the electrostatic chuck with composite surface coating.
4. device according to claim 1, it further comprises:
Clean wafer is delivered on the described wafer platform, transmits the processing of wafers mechanism of clean wafer then again from described wafer platform, thereby dirt particle is disposed from the described surface of described wafer platform.
5. device according to claim 1, wherein:
Described conveying mechanism comprises nozzle and driver part;
Described driver part is configured to the position that described nozzle is positioned at the described surface of the described wafer platform of next-door neighbour; And
Described control module is configured, so that described nozzle sprays the described surface of described wafer platform with described cleaning substance.
6. device according to claim 5, wherein said nozzle are articulated nozzle.
7. device according to claim 5, wherein said nozzle are positioned about six inches position, described surface of described wafer platform.
8. device according to claim 5, wherein said control module can make described driver part sweep the described surface of stroking described wafer platform with described nozzle, thereby the basic coating uniformly of described cleaning substance is coated on the described surface.
9. device according to claim 5, wherein said control module can make driver part move described wafer platform to stroke motion with respect to sweeping of described nozzle, thereby the basic coating uniformly of described cleaning substance is coated on the described surface.
10. device according to claim 1, wherein:
Described cleaning substance comprises deionized water; And
Described deionized water spray painting is spread across on the described surface of described wafer platform, describedly covers described surface with deionized water drop to use.
11. device according to claim 1, wherein:
Described cleaning substance comprises carbon dioxide; And
The described surface sprinkling of described wafer platform has described dry ice, and described snow comprises solid carbon dioxide particle.
12. device according to claim 1, wherein:
Described cleaning substance comprises ionized gas; And
Described ionized gas is provided for the described surface of described wafer platform, with in and charged particle.
13. device according to claim 1, wherein:
Described conveying mechanism comprises flat elements, described flat elements is positioned described surface one small distance of described wafer platform, and this small distance makes the space between the described surface of described flat elements and described wafer platform that described cleaning substance is spread on the described surface.
14. device according to claim 10, wherein said flat elements are positioned the position of the described about 0.02-0.5mm in surface of described wafer platform.
15. device according to claim 10, the shape of wherein said flat elements is similar to semiconductor wafer.
16. device according to claim 10, wherein said flat elements are semiconductor wafer, and the back of described semiconductor wafer is cleaned with the described surface of described wafer platform.
17. device according to claim 10, at least a portion of wherein said conveying mechanism also can provide cooling agent for described wafer platform.
18. device according to claim 1, wherein said cleaning substance comprise one or more materials of selecting from the tabulation of being made of following material:
DI water,
Alcohol,
Carbon dioxide,
Ionized dry air and
The ionization drying nitrogen.
19. device according to claim 1, wherein said second stress level significantly is lower than described first stress level.
20. device according to claim 1, at least a portion of wherein said device are installed in described process chamber inside.
21. device according to claim 1, at least a portion of wherein said device are installed in described process chamber outside.
22. a method that reduces backside particles, described method comprises following steps:
Wafer platform is positioned at process chamber inside;
Described process chamber is discharged into first stress level;
Provide cleaning substance to described platen surface; With
Described process chamber is drawn into second stress level, thereby dirt particle is disposed from the described surface of described wafer platform together with described cleaning substance.
23. method according to claim 22, wherein the described suction to described process chamber makes the described cleaning substance distillation of at least a portion, thereby described dirt particle is disposed from the described surface of described wafer platform.
24. method according to claim 22, wherein said wafer platform are the electrostatic chuck with composite surface coating.
25. method according to claim 22, it further comprises:
Clean wafer is delivered on the described wafer platform, and then transmits described clean wafer, thereby dirt particle is disposed from the described surface of described wafer platform from described wafer platform.
26. method according to claim 22, it further comprises:
Stroke pattern described cleaning substance is sprayed onto on the described surface of described wafer platform to sweep, thereby the basic coating uniformly of described cleaning substance is coated on the described surface.
27. method according to claim 22, wherein:
Described cleaning substance comprises deionized water; And
Described deionized water spray painting is spread across on the described surface of described wafer platform, describedly covers described surface with deionized water drop to use.
28. method according to claim 22, wherein:
Described cleaning substance comprises carbon dioxide; And
The described surface sprinkling of described wafer platform has described dry ice, and described snow comprises solid carbon dioxide particle.
29. method according to claim 19, wherein:
Described cleaning substance comprises ionized gas; And
The described surface of described wafer platform is sprayed with described ionized gas.
30. method according to claim 22, it further comprises:
Described flat elements is positioned at the one small distance place, described surface of described wafer platform, and this small distance makes the space between the described surface of described flat elements and described wafer platform that described cleaning substance is spread on the described surface.
31. method according to claim 30, wherein said flat elements are positioned the position of the described about 0.02-0.5mm in surface of described wafer platform.
32. method according to claim 30, the shape of wherein said flat elements is similar to semiconductor wafer.
33. method according to claim 30, wherein said flat elements are semiconductor wafer, and the back of described semiconductor wafer is cleaned with the described surface of described wafer platform.
34. method according to claim 22, wherein said cleaning substance comprise one or more materials of selecting from the tabulation of being made of following material:
DI water,
Alcohol,
Carbon dioxide,
Ionized dry air and
The ionization drying nitrogen.
35. method according to claim 22, wherein said second stress level significantly is lower than described first stress level.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63552404P | 2004-12-13 | 2004-12-13 | |
| US60/635,524 | 2004-12-13 | ||
| US11/239,000 | 2005-09-30 |
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| Publication Number | Publication Date |
|---|---|
| CN101437628A true CN101437628A (en) | 2009-05-20 |
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ID=40711574
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800426198A Pending CN101437628A (en) | 2004-12-13 | 2005-12-13 | Technique for reducing backside particles |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623298A (en) * | 2011-01-30 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of reaction chamber |
| CN105074877A (en) * | 2013-03-05 | 2015-11-18 | 应用材料公司 | Methods and apparatus for substrate edge cleaning |
| CN106733764A (en) * | 2016-11-16 | 2017-05-31 | 上海云鱼智能科技有限公司 | Active optical equipment decontamination apparatus |
| CN111795630A (en) * | 2019-04-03 | 2020-10-20 | 赫克斯冈技术中心 | Coordinate measuring machine with self-cleaning air bearing |
| CN113195317A (en) * | 2018-10-30 | 2021-07-30 | 伟摩有限责任公司 | Non-contact cleaning system |
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2005
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623298A (en) * | 2011-01-30 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of reaction chamber |
| CN102623298B (en) * | 2011-01-30 | 2014-09-24 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of reaction chamber |
| CN105074877A (en) * | 2013-03-05 | 2015-11-18 | 应用材料公司 | Methods and apparatus for substrate edge cleaning |
| CN105074877B (en) * | 2013-03-05 | 2018-05-11 | 应用材料公司 | For the clean method and apparatus of substrate edges |
| US10217650B2 (en) | 2013-03-05 | 2019-02-26 | Applied Materials, Inc. | Methods and apparatus for substrate edge cleaning |
| CN106733764A (en) * | 2016-11-16 | 2017-05-31 | 上海云鱼智能科技有限公司 | Active optical equipment decontamination apparatus |
| CN113195317A (en) * | 2018-10-30 | 2021-07-30 | 伟摩有限责任公司 | Non-contact cleaning system |
| CN113195317B (en) * | 2018-10-30 | 2022-06-07 | 伟摩有限责任公司 | Non-contact cleaning system |
| CN111795630A (en) * | 2019-04-03 | 2020-10-20 | 赫克斯冈技术中心 | Coordinate measuring machine with self-cleaning air bearing |
| US11181146B2 (en) | 2019-04-03 | 2021-11-23 | Hexagon Technology Center Gmbh | Coordinate-measuring machine with self-cleaning air bearing |
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