CN101436873A - Apparatus for generating millimeter wave ultra-wideband pulse based on double-electrode modulator - Google Patents

Abstract

The invention provides a device which can generate millimeter wave ultra-wideband pulse based on a dual electrode modulator, which relates to the field of optical fiber communication. The connecting mode of the device comprises the following: an output of a laser(1) is connected with a light carrier input of an Mach-Zehnder modulator(2), an output of a microwave signal source(4) is connected with an input of an electric bypass(6), two outputs of the electric bypass(6) are connected with an electric adder(71) and an electric delayer(5) respectively, an output of the electric delayer(5) is connected with an input of an electric adder(72), outputs of first and second Gaussian pulse sequence generators(31 and 32) are connected with the other inputs of the first and second electric adders(71 and 72) respectively, outputs of the electric adders(71 and 72) are connected with modulating ports of upper and lower arms of the Mach-Zehnder modulator respectively, and an output port of the Mach-Zehnder modulator(2) is connected with a light input of a photodiode(8). The modulated light signal comprises different phase modulation information, and the millimeter wave ultra-wideband pulse meeting FCC definition is generated by heterodyning of the photodiode(8).

Description

Produce the device of millimeter wave ultra-wideband pulse based on double-electrode modulator

Technical field

The present invention relates to optical fiber communication, ultra-wideband pulse generation technique, millimeter wave optics generation technique field, is a kind of device that utilizes the bipolar electrode MZ Mach-Zehnder to produce millimeter wave ultra-wideband pulse specifically.

Background technology

Ultra broadband (UWB) technology is the wireless communication technology that a kind of and other technology have a great difference, and it will bring low-power consumption, high bandwidth and relative simple wireless communication technology with access technology for the interface card of WLAN (wireless local area network) LAN and personal area network PAN.Super-broadband tech has solved the great difficult problem of puzzlement conventional wireless techniques relevant propagation aspect for many years, it has channel fading insensitive, and the transmit signal power spectrum density is low, and low interception capability is arranged, system complexity is low, and several centimetres advantages such as positioning accuracy can be provided.UWB is particularly useful in the high-speed radio access and military communication application in place such as indoor multi-path dense such as grade.In February, 2002, FCC (FCC) has ratified the UWB technology and has been used for civilian, regulation according to FCC, the ultra-wideband pulse of millimeter wave frequency band between from 24GHz to 60GHz, the 10dB minimum bandwidth 500MHz of millimeter wave ultra-wideband pulse, maximum power spectral densities (PSD) is restricted to-and 41.3dBm/MHz to be to improve the anti-interception capability of UWB signal.But the coverage of UWB signal has equally also been dwindled in the restriction of power spectral density, the UWB-over-fiber technology can address this problem, be central station with the base station between be connected by optical fiber, optical fiber has the advantage that loss is low and bandwidth is big, utilize Optical Fiber Transmission UWB signal easily the UWB signal to be sent to outside the several hundred kilometers, this technology has become the one preferred technique of individual radio local area network (LAN).Produce the device of millimeter wave ultra-wideband pulse, be not reported at present.

Summary of the invention

Original intention of the present invention is, utilizes the existing standard light communication apparatus, and a kind of cheap practical plan is provided, and meets the millimeter wave frequency band ultra-wideband pulse of the FCC of U.S. telecommunication union definition in order to generation.Its core devices is the bipolar electrode MZ Mach-Zehnder, modulator two arms up and down connects modulation signal respectively, mix by modulated pulse trains and microwave signal, make output signal have the millimeter wave harmonic wave by the delay parameter that changes microwave signal, by modulator parameter being set and regulating modulating pulse delay parameter and waveform parameter, by photodiode output millimeter wave ultra-wideband pulse signal.

Technical scheme of the present invention:

Device based on double-electrode modulator generation millimeter wave ultra-wideband pulse comprises: laser, bipolar electrode MZ Mach-Zehnder, the first Gaussian pulse train maker, the second Gaussian pulse train maker, microwave signal source, electric delayer, electric shunt, first electrical adder, second electrical adder and photodiode.

Concrete connected mode is:

Laser output connects bipolar electrode MZ Mach-Zehnder light carrier input, the microwave signal source output terminal connects the electric shunt input, two outputs of electric shunt connect input of first electrical adder and electric delayer input respectively, the input of electricity delayer output termination second electrical adder, another input of first Gaussian pulse train maker output termination, first electrical adder, another input of second Gaussian pulse train maker output termination, second electrical adder, first electrical adder output termination bipolar electrode MZ Mach-Zehnder upper arm modulation port, second electrical adder output termination bipolar electrode MZ Mach-Zehnder underarm modulation port, bipolar electrode MZ Mach-Zehnder output port connects the optical input of photodiode;

The upper arm modulation voltage V of bipolar electrode MZ Mach-Zehnder is set _Mod1With bipolar electrode MZ Mach-Zehnder underarm modulation voltage V _Mod2Satisfy V _Mod1=V _Mod2=V _π/ 2;

The upper arm bias voltage V of bipolar electrode MZ Mach-Zehnder is set _Bias1Underarm bias voltage V with the bipolar electrode MZ Mach-Zehnder _Bias2, satisfy V _Bias1=0, V _Bias2=V _π/ 2; V _πHalf-wave voltage for the bipolar electrode MZ Mach-Zehnder;

Contain by the photodiode output signal $\sin \left[\frac{\mathrm{\π}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\π}{f}_{s}t\right)$ The millimeter wave harmonic components;

The frequency f of microwave signal source is set _s, the time delay coefficient τ of electric delayer and modulator coefficient of phase modulation β make the humorous intensity of wave of millimeter wave

The value maximum; E _cBe the amplitude of light wave electric field, J _2nBessel function of the first kind;

Produce the millimeter wave ultra-wideband pulse device based on double-electrode modulator, concrete control method: the 1) Gaussian pulse train that produces by the first Gaussian pulse train maker $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\μ}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is the bit value 1 by the decision of input bit sequence, T _FWHMBe half maximum all-wave time, N is the exponent number N=1 of Gaussian pulse, and Ap is the modulation sequence amplitude; μ is the time-delay coefficient 25ps～85ps of the second Gaussian pulse train maker, regulates g ₂(t) pulse delay parameter μ makes by containing in the photodiode output signal $\sin \left[\frac{\mathrm{\π}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\π}{f}_{s}t\right)$ Signal pulse meets the millimeter wave ultra-wideband pulse standard that U.S. telecommunication union defines.

Gaussian pulse train by the generation of the first Gaussian pulse train maker $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker $g_2\left(t\right)={\mathrm{B\λA}}_p{e}^{-\frac{1}{2}{\left(\frac{t\×\mathrm{\δ}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is the bit value 1 by the decision of input bit sequence, T _FWHMIt was half maximum all-wave time, N is the exponent number N=1 of Gaussian pulse, and Ap is the modulation sequence amplitude, and λ is that the amplitude of the second Gaussian pulse train maker is regulated parameter 0.5～0.9, δ regulates parameter 0.3～0.5 the half maximum all-wave time of the second Gaussian pulse train maker, regulates g ₂(t) pulse parameter λ and δ make by containing in the photodiode output signal $\sin \left[\frac{\mathrm{\π}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\π}{f}_{s}t\right)$ Signal pulse meets the millimeter wave ultra-wideband pulse standard that U.S. telecommunication union defines.

Produce the operation principle of the device of millimeter wave ultra-wideband pulse based on double-electrode modulator:

1) according to concrete connected mode, by bipolar electrode MZ Mach-Zehnder output light signal

$E\left(t\right)=E_c\exp [\mathrm{<figure-callout\; id="2"\; label="j"\; filenames="A200810240116E00131.png"\; state="\{\{state\}\}">j</figure-callout>}2\mathrm{\&pi;}{f}_{c}t+\mathrm{j\&beta;}\cos \left(2\mathrm{\&pi;}{f}_{s}t\right)+\mathrm{j\&pi;}\&times;\frac{V_{\mathrm{mod}1}\&times;g_1\left(t\right)+V_{\mathrm{bias}1}}{V_{\mathrm{\&pi;}}}]$

${+E}_c\exp [\mathrm{<figure-callout\; id="2"\; label="j"\; filenames="A200810240116E00131.png"\; state="\{\{state\}\}">j</figure-callout>}2\mathrm{\&pi;}{f}_{c}t+\mathrm{j\&beta;}\cos \left(2\mathrm{\&pi;}{f}_s(t-\mathrm{\&tau;})\right)+\mathrm{j\&pi;}\&times;\frac{{\mathrm{<figure-callout\; id="2"\; label="V\; mod"\; filenames="A200810240116E00131.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_2\left(t\right)+V_{\mathrm{bias}2}}{V_{\mathrm{\&pi;}}}]$

Contain two groups of different phase-modulated information, E among the E (t) _cBe the amplitude of light wave electric field, f _cBe the light wave centre frequency.

2) then, utilize photodiode that light field is converted into photoelectric current

$i\left(t\right)\&Proportional;(1/2)E\left(t\right)E{\left(t\right)}^{*}=\frac{1}{2}{\mathrm{<figure-callout\; id="2"\; label="E\; c"\; filenames="A200810240116E00131.png"\; state="\{\{state\}\}">E</figure-callout>}}_c^{}\left\{\begin{array}{c}2+\exp \left[\begin{array}{c}\mathrm{j\&beta;}\cos \left(2\mathrm{\&pi;}{f}_{s}t\right)-\mathrm{j\&beta;}\cos \left(2\mathrm{\&pi;}{f}_s(t-\mathrm{\&tau;})\right)\\ +j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}(V_{\mathrm{mod}1}\&times;g_1\left(t\right)+V_{\mathrm{bias}1})-j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}(V_{\mathrm{<figure-callout\; id="2"\; label="mod"\; filenames="A200810240116E00131.png"\; state="\{\{state\}\}">mod</figure-callout>}2}\&times;g_2\left(t\right)+V_{\mathrm{bias}2})\end{array}\right]\\ +\exp \left[\begin{array}{c}\mathrm{j\&beta;}\cos \left(2\mathrm{\&pi;}{f}_s(t-\mathrm{\&tau;})\right)-\mathrm{j\&beta;}\cos (2\mathrm{\&pi;}{f}_{s}t)\\ +j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}(V_{\mathrm{<figure-callout\; id="2"\; label="mod"\; filenames="A200810240116E00131.png"\; state="\{\{state\}\}">mod</figure-callout>}2}\&times;g_2\left(t\right)+V_{\mathrm{bias}2})-j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}(V_{\mathrm{mod}1}\&times;g_1\left(t\right)+V_{\mathrm{bias}1})\end{array}\right]\end{array}\right\}$

Utilize Bessel function to launch to obtain millimeter-wave signal

$i_{\mathrm{mm}}={\mathrm{<figure-callout\; id="2"\; label="E\; c"\; filenames="A200810240116E00131.png"\; state="\{\{state\}\}">E</figure-callout>}}_c^{}\cos [j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}(V_{\mathrm{mod}1}\&times;g_1\left(t\right)+V_{\mathrm{bias}1})-j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}({\mathrm{<figure-callout\; id="2"\; label="V\; mod"\; filenames="A200810240116E00131.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_2\left(t\right)+V_{\mathrm{bias}2})]$

$\&times;J_{2n}\left(2\mathrm{\&beta;}\sin \left(\mathrm{\&pi;}{f}_s\mathrm{\&tau;}\right)\right)\cos 2n(2\mathrm{\&pi;}{f}_{1}t-\mathrm{\&pi;}{f}_s\mathrm{\&tau;})$

3) Adjustment System V parameter _Bias1=0, V _Bias2=V _π/ 2, V _Mod1=V _Mod2=V _π/ 2, sin π f ₁Millimeter-wave signal after τ=1 obtains simplifying

$i_{\mathrm{mm}}\left(t\right)={\mathrm{<figure-callout\; id="2"\; label="E\; c"\; filenames="A200810240116E00131.png"\; state="\{\{state\}\}">E</figure-callout>}}_c^{}\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]J_{2n}\left(2\mathrm{\&beta;}\right)\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$

Pulse train g from the visible modulated optical carrier phase place of following formula ₁(t) and g ₂(t), finally become the millimeter-wave frequency component through after the conversion $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ Modulated photocurrent intensity makes millimeter wave carrier intensity by coefficient of phase modulation β is set

The value maximum is then also by regulating impulse sequence g ₂(t) pulse delay parameter μ or g ₁(t) and g ₂(t) waveform parameter A _p, T _FWHM, make this pulse signal meet the millimeter wave ultra-wideband pulse standard that defines by U.S. telecommunication union.

Beneficial effect of the present invention is specific as follows:

The present invention does not relate to complexity and expensive equipment, only adopt the optical communication equipment of standard, make full use of the nonlinear characteristic of bipolar electrode MZ Mach-Zehnder, generated the ultra-wideband pulse of millimeter wave frequency band, and the millimeter wave ultra-wideband pulse that generates had adjustability, help super-broadband tech popularizing and using at millimeter wave frequency band.

Description of drawings

Fig. 1 produces millimeter wave ultra-wideband pulse principle of device schematic diagram based on double-electrode modulator.

Fig. 2 control method one modulating pulse wave form varies schematic diagram.

Fig. 3 control method two modulating pulse wave form varies schematic diagrames.

Fig. 4 control method three modulating pulse wave form varies schematic diagrames.

The millimeter wave ultra-wideband pulse spectrogram that Fig. 5 control method 1 generates.

Fig. 6 control method four modulating pulse wave form varies schematic diagrames.

Fig. 7 control method five modulating pulse wave form varies schematic diagrames.

Fig. 8 control method six modulating pulse wave form varies schematic diagrames.

The millimeter wave ultra-wideband pulse spectrogram that Fig. 9 control method 456 generates.

Embodiment

Below in conjunction with accompanying drawing the present invention is further described.

Produce the device of millimeter wave ultra-wideband pulse based on double-electrode modulator, see Fig. 1, this device comprises: laser 1, bipolar electrode MZ Mach-Zehnder 2, the first Gaussian pulse train maker 31, the second Gaussian pulse train maker 32, microwave signal source 4, electric delayer 5, electric shunt 6, first electrical adder 71, second electrical adder 72 and photodiode 8.

Concrete connected mode is:

Laser 1 output termination bipolar electrode MZ Mach-Zehnder 2 light carrier inputs, microwave signal source 4 output termination electric shunts 6 inputs, two outputs of electric shunt 6 connect 71 1 inputs of first electrical adder and electric delayer 5 inputs respectively, the input of electricity delayer 5 output terminations second electrical adder 72, the first Gaussian pulse train maker, 31 output terminations, first electrical adder, 71 another inputs, the second Gaussian pulse train maker, 32 output terminations, second electrical adder, 72 another inputs, first electrical adder, 71 output termination bipolar electrode MZ Mach-Zehnders, 2 upper arm modulation port, second electrical adder, 72 output termination bipolar electrode MZ Mach-Zehnders, 2 underarm modulation port, bipolar electrode MZ Mach-Zehnder 2 output ports connect the optical input of photodiode 8;

The upper arm modulation voltage V of bipolar electrode MZ Mach-Zehnder 2 is set _Mod1The underarm modulation voltage V of=2V and bipolar electrode MZ Mach-Zehnder 2 _Mod2=2V.

The upper arm bias voltage V of bipolar electrode MZ Mach-Zehnder 2 is set _Bias1=0 and the underarm bias voltage V of bipolar electrode MZ Mach-Zehnder 2 _Bias2=2V, the half-wave voltage V of bipolar electrode MZ Mach-Zehnder 2 _π=4V.

Contain by photodiode (8) output signal $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ The millimeter wave harmonic components;

Microwave signal frequency f is set _s=25GHz, the time delay coefficient τ=20ps of electric delayer, design generates 50GHz millimeter wave harmonic wave, and coefficient of phase modulation β=1.53 Bessel function J at this moment is set ₂(2 β (sin π f _sτ))=0.4865 value maximum, the i.e. humorous intensity of wave value of millimeter wave maximum;

Produce the control method of millimeter wave ultra-wideband pulse device based on double-electrode modulator:

One, the Gaussian pulse train that produces by the first Gaussian pulse train maker $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\&mu;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=50ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=4a.u., the time-delay coefficient μ=85ps of the second Gaussian pulse train maker; According to above parameter, draw g ₁(t) the waveform schematic diagram 311, g ₂(t) the waveform schematic diagram 321, as shown in Figure 2, and the ultra-wideband impulse signal of generation $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ Time domain signal Figure 81 is illustrated in figure 2 as a gaussian-shape single cycle pulse, frequency domain schematic diagram 811 as shown in Figure 5, this ultra-short pulse is punched in 53.1GHz～60.6GHz frequency band range,-10dB bandwidth is 2.57GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to millimeter wave ultra-wideband pulse.

Two, the Gaussian pulse train that produces by the first Gaussian pulse train maker $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\&mu;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=50ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=4a.u., the time-delay coefficient μ=50ps of the second Gaussian pulse train maker; According to above parameter, draw g ₁(t) the waveform schematic diagram 311, g ₂(t) the waveform schematic diagram 322, as shown in Figure 3, and the ultra-wideband impulse signal of generation $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ Time domain signal Figure 82 is illustrated in figure 3 as a gaussian-shape single cycle pulse, frequency domain schematic diagram 821 as shown in Figure 5, this ultra-short pulse is punched in 53.1GHz～60.6GHz frequency band range,-10dB bandwidth is 3.16GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to millimeter wave ultra-wideband pulse.

Three, the Gaussian pulse train that produces by the first Gaussian pulse train maker $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\&mu;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=50ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=1a.u., the time-delay coefficient μ=25ps of the second Gaussian pulse train maker; According to above parameter, draw g ₁(t) the waveform schematic diagram 311, g ₂(t) the waveform schematic diagram 323, as shown in Figure 4, and the ultra-wideband impulse signal of generation $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ Time domain signal Figure 83 is illustrated in figure 4 as a gaussian-shape single cycle pulse, frequency domain schematic diagram 831 as shown in Figure 5, this ultra-short pulse is punched in 53.1GHz～60.6GHz frequency band range,-10dB bandwidth is 3.47GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to millimeter wave ultra-wideband pulse.

Four, the Gaussian pulse train that produces by the first Gaussian pulse train maker $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker $g_2\left(t\right)={\mathrm{B\&lambda;A}}_p{e}^{-\frac{1}{2}{\left(\frac{t\&times;\mathrm{\&delta;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=30ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=1a.u. regulates g ₂(t) pulse parameter λ=0.75 and δ=0.3.According to above parameter, draw g ₁(t) the waveform schematic diagram 312, g ₂(t) the waveform schematic diagram 324, as shown in Figure 6, and the ultra-wideband impulse signal of generation $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ Time domain signal Figure 84 is illustrated in figure 6 as a gaussian-shape doublet pulse, frequency domain schematic diagram 841 as shown in Figure 9, this ultra-short pulse is punched in 53.1GHz～60.6GHz frequency band range,-10dB bandwidth is 6GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to millimeter wave ultra-wideband pulse.

Five, the Gaussian pulse train that produces by the first Gaussian pulse train maker $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker $g_2\left(t\right)={\mathrm{B\&lambda;A}}_p{e}^{-\frac{1}{2}{\left(\frac{t\&times;\mathrm{\&delta;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=30ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=1a.u. regulates g ₂(t) pulse parameter λ=0.9 and δ=0.5.According to above parameter, draw g ₁(t) the waveform schematic diagram 312, g ₂(t) the waveform schematic diagram 325, as shown in Figure 7, and the ultra-wideband impulse signal of generation $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ Time domain signal Figure 85 is illustrated in figure 8 as a gaussian-shape doublet pulse, frequency domain schematic diagram 851 as shown in Figure 9, this ultra-short pulse is punched in 53.1GHz～60.6GHz frequency band range,-10dB bandwidth is 7.5GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to millimeter wave ultra-wideband pulse.

Six, the Gaussian pulse train that produces by the first Gaussian pulse train maker $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker $g_2\left(t\right)={\mathrm{B\&lambda;A}}_p{e}^{-\frac{1}{2}{\left(\frac{t\&times;\mathrm{\&delta;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=30ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=1a.u. regulates g ₂(t) pulse parameter λ=0.5 and δ=0.5.According to above parameter, draw g ₁(t) the waveform schematic diagram 312, g ₂(t) the waveform schematic diagram 326, as shown in Figure 8, and the ultra-wideband impulse signal of generation $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ Time domain signal Figure 86 is illustrated in figure 8 as a gaussian-shape doublet pulse, frequency domain schematic diagram 861 as shown in Figure 9, this ultra-short pulse is punched in 53.1GHz～60.6GHz frequency band range,-10dB bandwidth is 7.5GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to millimeter wave ultra-wideband pulse.

Claims (3)

1. produce the device of millimeter wave ultra-wideband pulse based on double-electrode modulator, it is characterized in that: this device comprises: laser (1), bipolar electrode MZ Mach-Zehnder (2), the first Gaussian pulse train maker (31), the second Gaussian pulse train maker (32), microwave signal source (4), electric delayer (5), electric shunt (6), first electrical adder (71), second electrical adder (72) and photodiode (8).Concrete connected mode is:

Laser (1) output termination bipolar electrode MZ Mach-Zehnder (2) light carrier input, microwave signal source (4) output termination electric shunt (6) input, two outputs of electric shunt (6) connect (71) inputs of first electrical adder and electric delayer (5) input respectively, the input of electricity delayer (5) output termination second electrical adder (72), another input of the first Gaussian pulse train maker (31) output termination first electrical adder (71), another input of the second Gaussian pulse train maker (32) output termination second electrical adder (72), first electrical adder (71) output termination bipolar electrode MZ Mach-Zehnder (2) upper arm modulation port, second electrical adder (72) output termination bipolar electrode MZ Mach-Zehnder (2) underarm modulation port, bipolar electrode MZ Mach-Zehnder (2) output port connects the optical input of photodiode (8);

The upper arm modulation voltage V of bipolar electrode MZ Mach-Zehnder (2) is set _Mod1With bipolar electrode MZ Mach-Zehnder (2) underarm modulation voltage V _Mod2Satisfy V _Mod1=V _Mod2=V _π/ 2;

The upper arm bias voltage V of bipolar electrode MZ Mach-Zehnder (2) is set _Bias1Underarm bias voltage V with bipolar electrode MZ Mach-Zehnder (2) _Bias2, satisfy V _Bias1=0, V _Bias2=V _π/ 2; V _πHalf-wave voltage for bipolar electrode MZ Mach-Zehnder (2);

Contain by photodiode (8) output signal $\left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ The millimeter wave harmonic components;

The frequency f of microwave signal source (4) is set _sSatisfy sin π f with the time delay coefficient τ of electric delayer (5) _sτ=1, and coefficient of phase modulation β is set makes the humorous intensity of wave of millimeter wave The value maximum; E _cBe the amplitude of light wave electric field, J _2nBessel function of the first kind;

The Gaussian pulse train g that the millimeter wave ultra-wideband pulse standard adjustment that defines by U.S. telecommunication union is produced by the first Gaussian pulse train maker (31) ₁(t) and regulate the Gaussian pulse train g that produces by the second Gaussian pulse train maker (32) ₂(t), by photodiode (8) output ultra-wideband pulse.

2. according to claim 1 based on double-electrode modulator generation ultra-short pulse flushing device, it is characterized in that: by the Gaussian pulse train of the first Gaussian pulse train maker (31) generation $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker (32) $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\&mu;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is the bit value 1 by the decision of input bit sequence, T _FWHMBe half maximum all-wave time, N is the exponent number N=1 of Gaussian pulse, and Ap is the modulation sequence amplitude; μ is the time-delay coefficient 25ps～85ps of the second Gaussian pulse train maker (32), regulates g ₂(t) pulse delay parameter μ makes by containing in photodiode (8) output signal $\left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ Signal pulse meets the millimeter wave ultra-wideband pulse standard that U.S. telecommunication union defines.

3. according to claim 1 based on double-electrode modulator generation ultra-short pulse flushing device, it is characterized in that: by the Gaussian pulse train of the first Gaussian pulse train maker (31) generation $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train maker (32) $g_2\left(t\right)={\mathrm{B\&lambda;A}}_p{e}^{-\frac{1}{2}{\left(\frac{t\&times;\mathrm{\&delta;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is the bit value 1 by the decision of input bit sequence, T _FWHMIt was half maximum all-wave time, N is the exponent number N=1 of Gaussian pulse, and Ap is the modulation sequence amplitude, and λ is that the amplitude of the second Gaussian pulse train generating apparatus is regulated parameter 0.5～0.9, δ regulates parameter 0.3～0.5 the half maximum all-wave time of the second Gaussian pulse train generating apparatus, regulates g ₂(t) pulse parameter λ and δ make by containing in photodiode (4) output signal $\left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]\cos 2n\left(2\mathrm{\&pi;}{f}_{s}t\right)$ Signal pulse meets the millimeter wave ultra-wideband pulse standard that U.S. telecommunication union defines.

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