CN101436866A - High frequency electronic component - Google Patents
High frequency electronic component Download PDFInfo
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- CN101436866A CN101436866A CNA2008101777977A CN200810177797A CN101436866A CN 101436866 A CN101436866 A CN 101436866A CN A2008101777977 A CNA2008101777977 A CN A2008101777977A CN 200810177797 A CN200810177797 A CN 200810177797A CN 101436866 A CN101436866 A CN 101436866A
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Abstract
A high frequency electronic component includes a switch and a balun. The switch performs switching between a first transmission signal in the form of an unbalanced signal received at a first input port and a second transmission signal in the form of an unbalanced signal received at a second input port, and outputs one of the first and second transmission signals from an output port. The balun converts the transmission signal in the form of an unbalanced signal outputted form the output port of the switch to a transmission signal in the form of a balanced signal, and outputs this signal to a balanced input power amplifier.
Description
Technical field
The present invention relates to be used to handle the signal processing circuit of a plurality of high-frequency signals, particularly handle the transtation mission circuit of a plurality of transmission signals or handle the high frequency electronic component of the receiving circuit of a plurality of received signals.
Background technology
In recent years, can be corresponding to the mobile phone of a plurality of frequency bands (multiband) practicability.And have the high-speed data communication function the 3rd generation mobile phone also universal.Therefore, for mobile phone, require corresponding to multi-mode (multiple mode) and multiband.
For example, in time division multiple access (below be also referred to as TDMA) mode corresponding to multiwave mobile phone practicability.On the other hand, also practicability of the mobile phone of Wideband Code Division Multiple Access (WCDMA) (below be also referred to as WCDMA) mode.Therefore, in order effectively to utilize the existing basis (infrastructure) of TDMA mode, also utilize the communication of WCDMA mode simultaneously, require to have multi-mode and the corresponding mobile phone of multiband with the communication function of this dual mode.For example, claim in Europe: in the TDMA mode, be to carry out the WCDMA mode, i.e. the communication of UMTS (Universal Mobile Telecommunications System) mode in the mobile phone of GSM (Global System forMobile Communications) mode.
Yet in the radio communication device of mobile phone and so on, amplifying the power amplifier that sends signal in sending the transtation mission circuit of signal processing is essential component parts.Compare with the electronic unit that constitutes transtation mission circuit, this power amplifier price is higher.
In the conventional art, the GSM mode corresponding to multiwave mobile phone in what carry out is shared 1 power amplifier of approaching 2 wave bands (frequency band) of frequency.But, in the mobile phone of the multi-mode correspondence of communication function with GSM mode and UMTS mode, unexecuted in GSM mode and UMTS mode shared 1 power amplifier.In addition, in the multi-mode of the communication function of the wave band of the wave band with the GSM mode more than 1 and a plurality of UMTS modes and in corresponding to multiwave mobile phone, unexecuted in the wave band of a plurality of UMTS modes shared 1 power amplifier.
Have again, the spy open put down in writing in the 2006-186956 communique be: have conversion TDMA pattern and CDMA (code division multiple access) pattern selectively and the radio communication device of the multi-mode transtation mission circuit that uses.And open the technology of putting down in writing in the 2006-186956 communique be: connect switch at the input of 1 power amplifier, utilize this switch, with multiple transmission signal input power amplifier selectively the spy.
In addition, the spy open put down in writing in the 2003-143033 communique be: have and switch transmit path and the switching circuit of RX path, the high-frequency switch module that is provided with balun circuit that is connected the balun circuit of transmit path and is connected RX path.
Most main integrated circuits that carry out the signal modulation and demodulation that adopt generate the transmission signal of GSM mode and the transmission signal of UMTS mode in can be corresponding to the mobile phone of GSM mode and UMTS mode, and these are sent signals input transtation mission circuit.And, in the conventional art, in transtation mission circuit, use independent power amplifier respectively, amplify the transmission signal of GSM mode and the transmission signal of UMTS mode.Therefore, as mentioned above, in this transtation mission circuit, need the higher power amplifier of a plurality of prices, consequently, have the problem that influences mobile phone miniaturization and cost degradation.
Therefore, can consider 1 power amplifier of a plurality of transmission signal commons.As the structure that is used to realize it, a signal can considering the to be used for a plurality of transmission signals switch of input power amplifier selectively is arranged on the structure of the prime of 1 power amplifier.
Yet as the power amplifier in the mobile phone, in recent years, many motions are in the structure of the multistage connection of amplifier of balance input and output type, adopt monolithic integrated microwave circuit (to call MMIC in the following text) to constitute.This power amplifier is that to be transfused to the balance of transmission signal of balanced signal form imported.The spy open put down in writing in the 2006-186956 communique be: the structure that is provided with switch in the prime of 1 imported power amplifier of imbalance.But, in this structure, only handle the transmission signal of unbalanced signal form, so, the aforesaid imported power amplifier of balance that many motions are arranged can not be used.
In addition, majority is to adopt integrated circuit in can be corresponding to the mobile phone of GSM mode and UMTS mode, generates the transmission signal of GSM mode according to the balanced signal form, generates the transmission signal of UMTS mode according to the unbalanced signal form.Like this, mix when existing at the transmission signal of the transmission signal of balanced signal form and unbalanced signal form, the transmission signal of balanced signal form and the transmission signal of unbalanced signal form can not shared 1 power amplifiers.
In the transtation mission circuit of handling a plurality of transmission signals,, also can consider all transmission signals are become the balanced signal form for 1 imported power amplifier of balance of a plurality of transmission signal commons.In this case, can consider the switch that switches balanced signal to be set in the prime of 1 imported power amplifier of balance.But the on-off ratio that switches balanced signal switches the switch price height of unbalanced signal.Therefore, prime at 1 imported power amplifier of balance is provided with in the structure of the switch that switches balanced signal, even reduce cost, also exist owing to using the switch that switches balanced signal to produce the problem that cost increases by the quantity that reduces power amplifier.
In addition, carry out in the radio communication device of mobile phone and so in the receiving circuit of received signal processing, the low noise amplifier that amplifies received signal is essential component parts.In the electronic unit that constitutes receiving circuit, this low noise amplifier price is higher.
In the conventional art, for example, open in the 2005-064778 communique as the spy and to put down in writing, the interval of the frequency acceptance band of proposition between 2 systems receives in the narrower two waveband system of spacing frequency than sending, shared low noise amplifier and the receiving circuit that receives with filter of comprising in 2 received signals.
And the spy open put down in writing in the 2005-236971 communique be: the technology of using differential input and output type low noise amplifier in the receiving circuit at the radio communication device of mobile phone and so on.In addition, the spy open put down in writing in the 2006-074749 communique be: by the received signal of antenna multicoupler output balanced signal form, the technology that this received signal adopts differential input and output type low noise amplifier to amplify.In receiving circuit, use the differential input and output type low noise amplifier that the received signal of balanced signal form is amplified usually, thereby reduce the common-mode noise in the received signal, improve receiving sensitivity.
In recent years, along with multibandization and multi-modeization, the quantity of low noise amplifier and occupied area increase in mobile phone, and this becomes the obstacle of mobile phone miniaturization.In addition, as mentioned above, because the low noise amplifier price is higher, so the quantity along with low noise amplifier in mobile phone increases and the cost increase.
Therefore, open the record of 2005-064778 communique, can consider shared low noise amplifier and the receiving circuit that receives with filter of comprising in 2 received signals as the spy.But the combination that receives 2 frequency bands that can be shared with filter is very limited.For example, the received signal of the GSM of 850MHz frequency band mode (869～894MHz) and the received signal of the GSM mode of 900MHz frequency band (in 925～960MHz), even frequency band is more approaching, can not shared reception filter.Therefore, open the spy and have the very limited problem of spendable system in the technology of putting down in writing in the 2005-064778 communique.
Yet,, require in receiving circuit, to use the differential input and output type low noise amplifier of the received signal of amplifying the balanced signal form in order to improve receiving sensitivity.When using differential input and output type low noise amplifier in receiving circuit, the quantity of low noise amplifier and occupied area increase, and also can influence mobile phone miniaturization, cost degradation.
Opening the technology of putting down in writing in the 2005-064778 communique the spy is that received signal with the unbalanced signal form is as object, therefore, can not be used to use the receiving circuit of the differential input and output type low noise amplifier that the received signal of balanced signal form is amplified.
In the receiving circuit of handling a plurality of received signals,, also can consider all wirings in the receiving circuit to be taken as the wiring of balanced signal for all received signals for shared 1 the differential input and output type low noise amplifier of a plurality of received signals.In this case, can consider the switch that switches balanced signal to be set in the prime of 1 differential input and output type low noise amplifier.But the on-off ratio that switches balanced signal switches the price height of the switch of unbalanced signal.Therefore, prime at 1 differential input and output type low noise amplifier is provided with in the construction of switch that switches balanced signal, even reduce cost, also exist owing to using the switch that switches balanced signal to produce the problem that cost increases by the quantity that reduces low noise amplifier.In addition, when all received signals are the balanced signal form, exist the wiring of balanced signal to increase the problem of the easy deterioration of the degree of balance of balanced signal.
Summary of the invention
The objective of the invention is to: provide a kind of and be used for a plurality of transmission signals or a plurality of received signal, it is the high frequency electronic component of the signal processing circuit handled of a plurality of high-frequency signals, wherein in signal processing circuit, can use the imported amplifier of balance, and reduce the quantity of amplifier, thereby signal processing circuit Miniaturizable and cost degradation.
High frequency electronic component of the present invention is the imported amplifier of balance that is used to comprise the high-frequency signal that amplifies the balanced signal form, and handles the high frequency electronic component of the signal processing circuit of a plurality of high-frequency signals, is provided with switch and balance converter.Switch has output port and is transfused to a plurality of input ports of a plurality of high-frequency signals of unbalanced signal form respectively, and a plurality of high-frequency signals of the unbalanced signal form that is transfused to a plurality of input ports are switched, and exports from output port.Balance converter will be transformed into the high-frequency signal of balanced signal form by the high-frequency signal of the unbalanced signal form of output switching terminal mouth output, and with the high-frequency signal of this balanced signal form to the imported amplifier output of balance.
High frequency electronic component of the present invention also can further be provided with the imported amplifier of above-mentioned balance, also can be provided with signal path that a plurality of input ports are connected respectively in the band pass filter that is provided with at least 1 paths.
In addition, high frequency electronic component of the present invention also can further be provided with signal path that output port and a plurality of input port are connected respectively in the capacitor that is provided with at least 1 paths.
In addition, high frequency electronic component of the present invention also can further be provided with the multilayer board that comprises stacked a plurality of dielectric layers, multilayer board comprises a plurality of conductor layers of being located at its inside, and balance converter constitutes with these a plurality of conductor layers, and switch also can carry on multilayer board.
In addition, signal processing circuit can be to handle the transtation mission circuit of a plurality of transmission signals, and a plurality of high-frequency signals of unbalanced signal form can be a plurality of transmission signals of unbalanced signal form, and the imported amplifier of balance can be a power amplifier.In this case, high frequency electronic component can further be provided with and be arranged in the signal path that is connected respectively with a plurality of input ports the 2nd balance converter at least 1 paths, that the transmission signal transformation of balanced signal form become the transmission signal of unbalanced signal form.
In addition, signal processing circuit can be to handle the receiving circuit of a plurality of received signals, a plurality of high-frequency signals of unbalanced signal form can be a plurality of received signals of unbalanced signal form, and the imported amplifier of balance can be differential input and output type low noise amplifier.
In high frequency electronic component of the present invention, a plurality of high-frequency signals that will be transfused to the unbalanced signal form of a plurality of input ports with switch switch, export from output port, and will be transformed into the high-frequency signal of balanced signal form from the high-frequency signal of the unbalanced signal form of the output port of switch output with balance converter, output to the imported amplifier of balance of the high-frequency signal that amplifies this balanced signal form.Therefore, according to the present invention, can in signal processing circuit, use the imported amplifier of balance, and can reduce the quantity of amplifier, make the miniaturization of signal processing circuit and cost degradation become possibility.
In addition, signal processing circuit is to handle the transtation mission circuit of a plurality of transmission signals, a plurality of high-frequency signals of unbalanced signal form are a plurality of transmission signals of unbalanced signal form, at the imported amplifier of balance is under the situation of power amplifier, and high frequency electronic component of the present invention can further be provided with and be arranged in the signal path that is connected respectively with a plurality of input ports the 2nd balance converter at least 1 path, that the transmission signal transformation of balanced signal form become the transmission signal of unbalanced signal form.In this case, in the transtation mission circuit that the transmission signal of the transmission signal of balanced signal form and unbalanced signal form is handled, can use the imported power amplifier of balance, and can reduce the quantity of power amplifier, make the miniaturization of transtation mission circuit and cost degradation become possibility.
Other purpose of the present invention, feature and advantage will fully be understood by following explanation.
Description of drawings
Fig. 1 is the block diagram of circuit structure of one of the mobile phone high-frequency circuit example of the expression high frequency electronic component that comprises embodiment of the present invention 1.
Fig. 2 is the block diagram of the circuit structure of the transtation mission circuit in the expression high-frequency circuit shown in Figure 1.
Fig. 3 is the circuit diagram of circuit structure of the high frequency electronic component of expression embodiment of the present invention 1.
Fig. 4 is the perspective view of the high frequency electronic component of embodiment of the present invention 1.
Fig. 5 is the plane graph of the high frequency electronic component of embodiment of the present invention 1.
Fig. 6 A and Fig. 6 B are the top key diagrams of representing the 1st layer and the 2nd layer dielectric layer in the multilayer board shown in Figure 4 respectively.
Fig. 7 A and Fig. 7 B are the top key diagrams of representing the 3rd layer and the 4th layer dielectric layer in the multilayer board shown in Figure 4 respectively.
Fig. 8 A and Fig. 8 B are the top key diagrams of representing the 5th layer and the 6th layer dielectric layer in the multilayer board shown in Figure 4 respectively.
Fig. 9 A and Fig. 9 B are the top key diagrams of representing the 7th layer and the 8th layer dielectric layer in the multilayer board shown in Figure 4 respectively.
Figure 10 A and Figure 10 B are the key diagrams of the conductor layer of representing that respectively the 9th layer of dielectric layer top in the multilayer board shown in Figure 4 and the 9th layer of dielectric layer are following.
Figure 11 is the block diagram of expression for the high-frequency circuit of the comparative example of the high-frequency circuit of embodiment of the present invention 1.
Figure 12 is the circuit diagram of another structure of the balance converter of expression embodiment of the present invention 1.
Figure 13 is the block diagram of variation 1～3 of the high frequency electronic component of expression embodiment of the present invention 1.
Figure 14 is the block diagram of transtation mission circuit that expression comprises the high frequency electronic component of embodiment of the present invention 2.
Figure 15 is the block diagram of expression for the transtation mission circuit of the comparative example 1 of the transtation mission circuit of embodiment of the present invention 2.
Figure 16 is the block diagram of expression for the transtation mission circuit of the comparative example 2 of the transtation mission circuit of embodiment of the present invention 2.
Figure 17 is the block diagram of expression for the transtation mission circuit of the comparative example 3 of the transtation mission circuit of embodiment of the present invention 2.
Figure 18 is the block diagram of transtation mission circuit that expression comprises the high frequency electronic component of embodiment of the present invention 3.
Figure 19 is the block diagram of expression for the transtation mission circuit of the comparative example 1 of the transtation mission circuit of embodiment of the present invention 3.
Figure 20 is the block diagram of expression for the transtation mission circuit of the comparative example 2 of the transtation mission circuit of embodiment of the present invention 3.
Figure 21 is the block diagram of expression for the transtation mission circuit of the comparative example 3 of the transtation mission circuit of embodiment of the present invention 3.
Figure 22 is the block diagram of transtation mission circuit that expression comprises the high frequency electronic component of embodiment of the present invention 4.
Figure 23 is the block diagram of expression for the transtation mission circuit of the comparative example 1 of the transtation mission circuit of embodiment of the present invention 4.
Figure 24 is the block diagram of expression for the transtation mission circuit of the comparative example 2 of the transtation mission circuit of embodiment of the present invention 4.
Figure 25 is the block diagram of circuit structure of one of the mobile phone high-frequency circuit example of the expression high frequency electronic component that comprises embodiment of the present invention 5.
Figure 26 is the block diagram of the circuit structure of the receiving circuit in the expression high-frequency circuit shown in Figure 25.
Figure 27 is the circuit diagram of circuit structure of the high frequency electronic component of expression embodiment of the present invention 5.
Figure 28 is the perspective view of the high frequency electronic component of embodiment of the present invention 5.
Figure 29 is the plane graph of the high frequency electronic component of embodiment of the present invention 5.
Figure 30 A and Figure 30 B are the top key diagrams of representing the 1st layer and the 2nd layer dielectric layer in the multilayer board shown in Figure 28 respectively.
Figure 31 A and Figure 31 B are the top key diagrams of representing the 3rd layer and the 4th layer dielectric layer in the multilayer board shown in Figure 28 respectively.
Figure 32 A and Figure 32 B are the top key diagrams of representing the 5th layer and the 6th layer dielectric layer in the multilayer board shown in Figure 28 respectively.
Figure 33 A and Figure 33 B are the top key diagrams of representing the 7th layer and the 8th layer dielectric layer in the multilayer board shown in Figure 28 respectively.
Figure 34 A and Figure 34 B represent the 9th layer of dielectric layer top in the multilayer board shown in Figure 28 and the key diagram of the conductor layer under the 9th layer of dielectric layer respectively.
Figure 35 is the block diagram of expression for the high-frequency circuit of the comparative example of the high-frequency circuit of embodiments of the present invention 5.
Figure 36 is the circuit diagram of another structure of the balance converter of expression embodiment of the present invention 5.
Figure 37 is the block diagram of variation 1～3 of the high frequency electronic component of expression embodiment of the present invention 5.
Figure 38 is the block diagram that comprises the high-frequency circuit of the high frequency electronic component of representing embodiment of the present invention 6.
Figure 39 is the block diagram of expression for the high-frequency circuit of the comparative example of the high-frequency circuit of embodiment of the present invention 6.
Figure 40 is the block diagram of variation of the high frequency electronic component of expression embodiment of the present invention 6.
Figure 41 is the block diagram of high-frequency circuit that expression comprises the high frequency electronic component of embodiment of the present invention 7.
Figure 42 is the block diagram of expression for the high-frequency circuit of the comparative example of the high-frequency circuit of embodiment of the present invention 7.
Figure 43 is the block diagram of high-frequency circuit that expression comprises the high frequency electronic component of embodiment of the present invention 8.
Figure 44 is the block diagram of high-frequency circuit that expression comprises the high frequency electronic component of embodiment of the present invention 9.
Figure 45 is the block diagram of expression for the high-frequency circuit of the comparative example of the high-frequency circuit of embodiment of the present invention 9.
Figure 46 is the block diagram of high-frequency circuit that expression comprises the high frequency electronic component of embodiment of the present invention 10.
Figure 47 is the block diagram of high-frequency circuit that expression comprises the high frequency electronic component of embodiment of the present invention 11.
Embodiment
With reference to the accompanying drawings, describe embodiments of the present invention in detail.At first, with reference to Fig. 1, one of the mobile phone high-frequency circuit example of the high frequency electronic component that comprises embodiments of the present invention 1 is described.Fig. 1 is the block diagram of the circuit structure of one of this high-frequency circuit of expression example.This high-frequency circuit is that the signal of GSM mode and signal that the WCDMA mode is the UMTS mode are handled for the TDMA mode.
Here, the signal kinds of GSM mode is shown in table 1, the signal kinds of UMTS mode is shown in table 2.The frequency band of signal is represented to send in " up " hurdle in table 1,2, and the frequency band of received signal is represented on " descending " hurdle.
[table 1]
| System | The frequency band title | Up (MHz) | Descending (MHz) |
| GSM850(AGSM) | The 850MHz frequency band | 824～849 | 869～894 |
| GSM900(EGSM) | The 900MHz frequency band | 880～915 | 925～960 |
| GSM1800(DCS) | The 1800MHz frequency band | 1710～1785 | 1805～1880 |
| GSM1900(PCS) | The 1900MHz frequency band | 1850～1910 | 1930～1990 |
[table 2]
| The wave band name | The frequency band title | Up (MHz) | Descending (MHz) |
| I | The 2100MHz frequency band | 1920～1980 | 2110～2170 |
| II | The 1900MHz frequency band | 1850～1910 | 1930～1990 |
| III | The 1800MHz frequency band | 1710～1785 | 1805～1880 |
| IV | The 1700MHz frequency band | 1710～1755 | 2110～2155 |
| V | The 850MHz frequency band | 824～849 | 869～894 |
| VI | The 850MHz frequency band | 830～840 | 875～885 |
| VII | The 2600MHz frequency band | 2500～2570 | 2620～2690 |
| VIII | The 900MHz frequency band | 880～915 | 925～960 |
| IX | The 1800MHz frequency band | 1749.9～1784.9 | 1844.9～1879.9 |
| X | The 1700MHz frequency band | 1710～1770 | 2110～2170 |
High-frequency circuit shown in Figure 1 is provided with antenna 101, switch 1 and integrated circuit (to call IC in the following text) 2.Switch 1 has 4 port one a, 1b, 1c, 1d, with port one a selectively with port one b, 1c, the arbitrary port among the 1d connects.Port one a is connected with antenna 101.
IC2 is the circuit that mainly carries out the signal modulation and demodulation.IC2 generates the transmission signal UMTS Tx of UMTS mode and the transmission signal GSM Tx and the output of GSM mode in the present embodiment.The transmission signal UMTS Tx of IC2 output and transmission signal GSM Tx are the unbalanced signal form.In addition, IC2 receives the received signal UMTS Rx of UMTS mode and the received signal GSM Rx of GSM mode.The received signal UMTS Rx that IC2 receives is the unbalanced signal form, and the received signal GSM Rx that IC2 receives is the balanced signal form.In addition, IC2 has terminal 2a, 2b, 2c, 2d1,2d2.Send signal UMTS Tx by terminal 2a output, send signal GSM Tx and export by terminal 2b.Received signal UMTS Rx input terminal 2c, received signal GSM Rx input terminal 2d1,2d2.
Send signal GSM Tx and received signal GSM Rx and be frequency band in 4 systems shown in the table 1 near transmission signal and the received signal of at least one side among GSM850 (AGSM) and the GSM900 (EGSM), or at least one side's transmission signal and received signal among approaching GSM1800 (DCS) of 4 system's midbands shown in the table 1 and the GSM1900 (PCS).In the present embodiment, if sending signal GSM Tx and received signal GSM Rx is transmission signal and the received signal of at least one side among GSM850 (AGSM) and the GSM900 (EGSM), then send signal UMTS Tx and received signal UMTS Rx and be 10 wave band midbands shown in the table 2 and GSM850 (AGSM) and GSM900 (EGSM) approaching wave band V, VI, the transmission signal and the received signal of any one wave band among the VIII.In addition, if sending signal GSM Tx and received signal GSM Rx is transmission signal and the received signal of at least one side among GSM1800 (DCS) and the GSM1900 (PCS), then send signal UMTS Tx and received signal UMTS Rx and be the transmission signal and the received signal of any one wave band among 10 wave band midbands shown in the table 2 and GSM1800 (DCS) and GSM1900 (PCS) approaching wave band I, II, III, IV, IX, the X.
High-frequency circuit also is provided with switch 3, antenna multicoupler 4, band pass filter (to call BPF in the following text) 5,6, transtation mission circuit 7 and low pass filter (to call LPF in the following text) 8.Switch 3 has 3 port 3a, 3b, 3c, with port 3a selectively with port 3b, the arbitrary port among the 3c connects.Port 3c is connected with the port one c of switch 1 via LPF8.
BPF6 has 1 uneven input and 2 balance outputs.2 the balance outputs of BPF6 and the terminal 2d1 of IC2,2d2 connects.The uneven input of BPF6 is connected with the port one d of switch 1.
Fig. 2 represents the circuit structure of transtation mission circuit 7.7 pairs of a plurality of transmission signals as a plurality of high-frequency signals of transtation mission circuit promptly send signal UMTS Tx and send signal GSM Tx and handle.Transtation mission circuit 7 is corresponding to signal processing circuit of the present invention.Transtation mission circuit 7 is provided with input 7a, 7b and output 7c.Input 7a is connected with the terminal 2a of IC2.Input 7b is connected with the terminal 2b of IC2.Output 7c is connected with the port 3a of switch 3.
In addition, transtation mission circuit 7 is provided with the imported power amplifier 14 of switch 11, balance converter 12, BPF13 and balance.Switch 11 has 2 input port 11a, 11b and 1 output port 11c, with output port 11c selectively with input port 11a, the arbitrary port among the 11b connects.Balance converter 12 has 1 uneven input and 2 balance outputs.The input port 11a of switch 11 is connected with the input 7a of transtation mission circuit 7 via BPF13.The input port 11b of switch 11 is connected with the input 7b of transtation mission circuit 7.The output port 11c of switch 11 is connected with the uneven input of balance converter 12.
Have again, as shown in Figure 1, on the signal path that sends signal GSM Tx, BPF is not set, and on the signal path that sends signal UMTS Tx, is provided with BPF13.It is the reasons are as follows: send signal and received signal and cut apart by the time in the TDMA mode, but send signal and received signal is not cut apart by the time in the UMTS mode.Therefore, the very high isolation that sends between signal and the received signal in the UMTS mode is necessary.In order to realize high isolation, between the power amplifier of the IC of the transmission signal of output UMTS mode and the transmission signal of amplification UMTS mode, BPF is set usually.Therefore, also on the signal path of the transmission signal UMTS Tx between IC2 and the power amplifier 14, be provided with BPF13 in the present embodiment.Be arranged on LPF8 on the signal path of the transmission signal GSM Tx between the port one c of the port 3c of switch 3 and switch 1 and be used for suppressing power amplifier 14 that produce, for the multiplication ripple spurious signal that sends signal.
Fig. 3 is the circuit diagram of the circuit structure of expression high frequency electronic component 10.High frequency electronic component 10 is provided with: input terminal 10a, 10b and lead-out terminal 10c1,10c2; Above-mentioned switch 11; And balance converter 12.Input terminal 10a is connected with the output of BPE13 and the input port 11a of switch 11.Input terminal 10b is connected with the input 7b of transtation mission circuit 7.In addition, lead-out terminal 10c1,2 balance outputs of 10c2 and balance converter 12 and 2 balance inputs of power amplifier 14 are connected.Switch 11 has the control signal VC1 that input is used to control this switch 11, the control terminal 11d of VC2,11e.
Fig. 3 represents the example that balance converter 12 is made of the lc circuit that adopts inductor and capacitor.In this example, balance converter 12 has 2 inductor L1, L2 and 2 capacitor C1, C2.The end of inductor L1 and the end of capacitor C1 are connected with the uneven input of balance converter 12.The other end of inductor L1 is connected with the balance output of balance converter 12 on being connected lead-out terminal 10c2, and is connected with ground via capacitor C2.The other end of capacitor C1 is connected with the balance output of balance converter 12 on being connected lead-out terminal 10c1, and is connected with ground via inductor L2.
In addition, in example shown in Figure 3, high frequency electronic component 10 is provided with: be arranged on the input port 11b of switch 11 and the capacitor C3 on the signal path between the input terminal 10b; And be arranged on capacitor C4 on the signal path between the uneven input of the output port 11c of switch 11 and balance converter 12.Capacitor C3, C4 are used to prevent to result from control signal VC1, and the direct current of VC2 flows into and port one 1b, the signal path that 11c connects.Have again, in example shown in Figure 3, on the input port 11a of switch 11 and the signal path between the input terminal 10a, capacitor is not set.This be because: the BPF13 that is connected with input terminal 10a has the function passed through of prevention direct current.Resulting from control signal VC1, under the situation of the direct current of VC2 by input port 11a generation, promptly BPF13 do not have under the situation that stops the function that direct current passes through and BPF13 for the little situation of the tolerance of direct current under, also can on the input port 11a of switch 11 and the signal path between the input terminal 10a, the capacitor that the prevention direct current passes through be set.In addition, the signal path that is connected with port one 1b and with signal path that port one 1c is connected on needn't stop and result from control signal VC1, under the situation that the direct current of VC2 passes through, also capacitor C3 or capacitor C4 can be set.With the port one 1a of switch 11,11b on each signal path that 11c connects, stops to result from control signal VC1 if necessary, the direct current of VC2 passes through, and then on this signal path capacitor is set.For whether need with the port one 1a of switch 11,11b is provided with capacitor on each signal path that 11c connects, and describes in detail in the back.In addition, in Fig. 1 and Fig. 2, omitted capacitor C3, the diagram of C4.
Below, the effect of the high-frequency circuit of the high frequency electronic component 10 that comprises present embodiment is described.IC2 generates and the transmission signal UMTS Tx of output unbalanced signal form and the transmission signal GSM Tx of unbalanced signal form.Send the input port 11a of signal UMTS Tx by the switch 11 of the BPF13 input high frequency electronic component 10 of transtation mission circuit 7.Send the input port 11b that signal GSMTx is transfused to switch 11.Switch 11 is according to input control terminal 11d, the control signal VC1 of 11e, the state of VC2, between the transmission signal GSM Tx of the unbalanced signal form of the transmission signal UMTS Tx of the unbalanced signal form of fan-in mouth 11a and fan-in mouth 11b, switch, and export by output port 11c.The transmission signal UMTS Tx of unbalanced signal form and the transmission signal GSMTx of unbalanced signal form are corresponding to a plurality of high-frequency signals of unbalanced signal form of the present invention.Balance converter 12 will become the transmission signal of balanced signal form by the transmission signal transformation of the unbalanced signal form of the output port 11c of switch 11 output, and output to the imported power amplifier 14 of balance that the transmission signal to this balanced signal form amplifies.The transmission signal of input power amplifier 14 amplifies through power amplifier 14, as the port 3a of the transmission signal input switch 3 of unbalanced signal form.
When transmission signal UMTS Tx was sent out, the port 3a of switch 3 was connected with port 3b, and the port one a of switch 1 is connected with port one b.In this case, send signal UMTSTx and present to antenna 101 via the BPF4b and the switch 1 of switch 3, antenna multicoupler 4 successively, send by antenna 101.
When transmission signal GSM Tx was sent out, the port 3a of switch 3 was connected with port 3c, and the port one a of switch 1 is connected with port one c.In this case, send signal GSM Tx and present to antenna 101 via switch 3, LPF8 and switch 1 successively, send by antenna 101.
In high-frequency circuit shown in Figure 1, can under the port one a of switch 1 and state that port one b is connected, carry out the processing of received signal UMTS Rx.At this state, the received signal UMTS Rx that is received by antenna 101 is successively via the BPF4a and the BPF5 of switch 1, antenna multicoupler 4, input IC2.
In high-frequency circuit shown in Figure 1, can under the port one a of switch 1 and state that port one d is connected, carry out the processing of received signal GSM Rx.At this state, the received signal GSM Rx that is received by antenna 101 is successively via switch 1 and BPF6, input IC2.
In the high frequency electronic component 10 of present embodiment, switch 11 switches between the transmission signal GSM Tx of the unbalanced signal form of the transmission signal UMTS Tx of the unbalanced signal form of fan-in mouth 11a and fan-in mouth 11b, and export by output port 11c, the transmission signal transformation of the unbalanced signal form that balance converter 12 will be exported by the output port 11c of switch 11 becomes the transmission signal of balanced signal form, and exports to the imported power amplifier 14 of balance that the transmission signal with this balanced signal form amplifies.Thus, according to present embodiment, can in handling the transtation mission circuit 7 that sends signal GSM Tx and send signal UMTS Tx, use the imported power amplifier 14 of balance, can reduce simultaneously the quantity of the power amplifier that comprises in the transtation mission circuit 7, consequently, make the miniaturization of transtation mission circuit 7 and cost degradation become possibility.
Below, the structure of the high frequency electronic component 10 of present embodiment is described.Fig. 4 is the perspective view of the outward appearance of expression high frequency electronic component 10.Fig. 5 is the plane graph of high frequency electronic component 10.As Fig. 4 and shown in Figure 5, high frequency electronic component 10 is provided with the incorporate multilayer board 20 of each element that makes high frequency electronic component 10.To describe in detail in the back, multilayer board 20 contains stacked a plurality of dielectric layers.In addition, multilayer board 20 has top 20a, bottom surface 20b and 4 sides, forms rectangular shape.
Circuit in the high frequency electronic component 10 is made of the element that is arranged at conductor layer, the above-mentioned dielectric layer in the multilayer board 20 and is equipped on the top 20a of multilayer board 20.Here, as an example, 20a carries switch 11 and capacitor C3, C4 in the above.
Below, with reference to Fig. 6 A to Figure 10 B, describe dielectric layer and conductor layer on the multilayer board 20 in detail.Fig. 6 A and Fig. 6 B represent respectively above last the 1st layer, the 2nd layer dielectric layer.Fig. 7 A and Fig. 7 B represent respectively above last the 3rd layer, the 4th layer dielectric layer.Fig. 8 A and Fig. 8 B represent respectively above last the 5th layer, the 6th layer dielectric layer.Fig. 9 A and Fig. 9 B represent respectively above last the 7th layer, the 8th layer dielectric layer.Figure 10 A represents above last the 9th layer of dielectric layer.Figure 10 B be illustrated in from state under from last the 9th layer of dielectric layer and under conductor layer.Circle mark among Fig. 6 A to Figure 10 B is represented through hole.
On the 1st layer shown in Fig. 6 A is above the dielectric layer 21, form: the conductor layer 211A～211G that is connected in switch 11; Be connected in the conductor layer 213A of capacitor C3,213B; And the conductor layer 214A that is connected in capacitor C4,214B.Conductor layer 211A is connected with the port one 1a of switch 11.Conductor layer 211C is connected with the port one 1b of switch 11.Conductor layer 211E is connected with the port one 1c of switch 11.Conductor layer 211F is connected with the control terminal 11d of switch 11.Conductor layer 211D is connected with the control terminal 11e of switch 11. Conductor layer 211B, 211G is connected with the ground of switch 11.In addition, on dielectric layer 21, form a plurality of through holes that are connected with above-mentioned each conductor layer.
Above the dielectric layer 22, form conductor layer 221,222,223,224,225,226 the 2nd layer shown in Fig. 6 B.Conductor layer 211A is connected with conductor layer 221 via the through hole that forms on the dielectric layer 21.Conductor layer 211D is connected with conductor layer 222 via the through hole that forms on the dielectric layer 21.Conductor layer 211F is connected with conductor layer 223 via the through hole that forms on the dielectric layer 21. Conductor layer 211C, 213A are connected with conductor layer 224 via the through hole that forms on the dielectric layer 21 respectively.Conductor layer 211E, 214B are connected with conductor layer 225 via the through hole that forms on the dielectric layer 21 respectively.Conductor layer 213B is connected with conductor layer 226 via the through hole that forms on the dielectric layer 21.In addition, on dielectric layer 22, form respectively and conductor layer 221,222,223,226 through hole and other a plurality of through holes that connect.
Above the dielectric layer 23, form capacitor conductor layer 231 and conductor layer for grounding 232 the 3rd layer shown in Fig. 7 A.Conductor layer 214A is connected with conductor layer 231 via the through hole that forms on the dielectric layer 21,22. Conductor layer 211B, 211G is connected with conductor layer 232 via the through hole that forms on the dielectric layer 21,22.In addition, on dielectric layer 23, form respectively through hole and other a plurality of through holes that connect with conductor layer 231,232.
Above the dielectric layer 24, form capacitor conductor layer 241,242 and conductor layer 243 the 4th layer shown in Fig. 7 B.Capacitor C1 in conductor layer 231,241 and dielectric layer 23 pie graphs 3 that between them, dispose.Capacitor C2 in conductor layer 232,242 and dielectric layer 23 pie graphs 3 that between them, dispose.Conductor layer 232 is connected with conductor layer 243 via 2 through holes that form on the dielectric layer 23.In addition, on dielectric layer 24, form respectively and conductor layer 241,242,243 through hole and other a plurality of through holes that connect.
Above the dielectric layer 25, form inductor conductor layer 251,252 and conductor layer 253,254 the 5th layer shown in Fig. 8 A.Conductor layer 242 is connected with conductor layer 251 via the through hole that forms on the dielectric layer 24.Conductor layer 241 is connected with conductor layer 252 via the through hole that forms on the dielectric layer 24.Conductor layer 243 is connected with conductor layer 253 via 2 through holes that form on the dielectric layer 24.Conductor layer 231 is connected with conductor layer 254 via the through hole that forms on the dielectric layer 23,24.In addition, on dielectric layer 25, form respectively and conductor layer 251,252,253,254 through hole and other a plurality of through holes that connect.
Above the dielectric layer 26, form inductor conductor layer 261,262 and conductor layer 263 the 6th layer shown in Fig. 8 B.Conductor layer 251 is connected with conductor layer 261 via the through hole that forms on the dielectric layer 25.Conductor layer 252 is connected with conductor layer 262 via the through hole that forms on the dielectric layer 25.Conductor layer 253 is connected with conductor layer 263 via 2 through holes that form on the dielectric layer 25.In addition, on dielectric layer 26, form respectively and conductor layer 261,262,263 through hole and other a plurality of through holes that connect.
Above the dielectric layer 27, form inductor conductor layer 271,272 and conductor layer 273 the 7th layer shown in Fig. 9 A.Conductor layer 261 is connected with conductor layer 271 via the through hole that forms on the dielectric layer 26.Conductor layer 262 is connected with conductor layer 272 via the through hole that forms on the dielectric layer 26.Conductor layer 263 is connected with conductor layer 273 via 2 through holes that form on the dielectric layer 26.In addition, on dielectric layer 27, form respectively and conductor layer 271,272,273 through hole and other a plurality of through holes that connect.
Above the dielectric layer 28, form inductor conductor layer 281,282 and conductor layer 283 the 8th layer shown in Fig. 9 B.Conductor layer 271 is connected with conductor layer 281 via the through hole that forms on the dielectric layer 27.In addition, conductor layer 231 is connected with conductor layer 281 via the through hole and the conductor layer 254 that form on the dielectric layer 23～27.Conductor layer 272 is connected with conductor layer 282 via the through hole that forms on the dielectric layer 27.Conductor layer 273 is connected with conductor layer 283 via 2 through holes that form on the dielectric layer 27.In addition, on dielectric layer 28, form respectively through hole and other a plurality of through holes that connect with conductor layer 282,283.
Inductor L1 shown in Figure 3 is by conductor layer 251,261, and 271,281 via through holes are connected in series them and constitute.Inductor L2 shown in Figure 3 is by conductor layer 252,262, and 272,282 via through holes are connected in series them and constitute.
Above the dielectric layer 29, form conductor layer for grounding 291 and conductor layer 292,293 the 9th layer shown in Figure 10 A.Conductor layer 282,283 is connected with conductor layer 291 via the through hole that forms on the dielectric layer 28 respectively.In addition, conductor layer 232 is connected with conductor layer 291 via the through hole that forms on the dielectric layer 23～28.Conductor layer 242 is connected with conductor layer 292 via the through hole that forms on the dielectric layer 24～28.Conductor layer 252 is connected with conductor layer 293 via the through hole that forms on the dielectric layer 25～28.In addition, on dielectric layer 29, form a plurality of through holes and other a plurality of through holes that connect with conductor layer 291,292,293.
Shown in Figure 10 B, be to form on the bottom surface 20b of multilayer board 20 below dielectric layer 29: constitute input terminal 10a, the conductor layer 310a of 10b, 310b; Constitute lead-out terminal 10c1, the conductor layer 310c1 of 10c2,310c2; Constitute control terminal 11d, the conductor layer 311d of 11e, 311e; And the conductor layer G1～G11 that constitutes earth terminal.
Stacked above-mentioned the 1st layer to the 9th layer dielectric layer 21～29 and conductor layer form multilayer board 20 shown in Figure 4.This above multilayer board 20 20a carry switch 11 and capacitor C3, C4.Multilayer board 20 interior a plurality of conductor layers that balance converter 12 usefulness are located in the above-mentioned conductor layer constitute.Have again, in the present embodiment,, can adopt as the material of dielectric layer and use resin, pottery or the various materials such as material that both are compound as multilayer board 20.But,, especially preferably use the low temperature while sintered ceramic multilager base plate of excellent in high-frequency characteristics as multilayer board 20.
Below, by the effect of present embodiment relatively being described with comparative example.Figure 11 is the block diagram of circuit structure of the high-frequency circuit of expression comparative example.Do not establish switch 3,11 and balance converter 12 in the high-frequency circuit shown in Figure 1 in the high-frequency circuit of this comparative example, and be provided with 2 power amplifier 34A, 34B replaces the power amplifier 14 in the high-frequency circuit shown in Figure 1.Power amplifier 34A, 34B are uneven imported.In the high-frequency circuit of comparative example, the transmission signal UMTS Tx that is exported by BPF13 amplifies the BPF4b of the shared device 4 of input aerial by power amplifier 34A.In addition, the transmission signal GSM Tx by IC2 output amplifies the port one c of input switch 1 by LPF8 by power amplifier 34B.In the high-frequency circuit of comparative example, BPF13 and power amplifier 34A, 34B constitutes transtation mission circuit.Other structure of the high-frequency circuit of comparative example is identical with high-frequency circuit shown in Figure 1.
In comparative example shown in Figure 11, power amplifier as mobile phone, can not use the imported power amplifier of the balance that proposes all multi-schemes in recent years, and two power amplifiers that price is higher of needs, therefore, hindered transtation mission circuit and comprise the miniaturization and the cost degradation of the mobile phone high-frequency circuit of this circuit.And in the present embodiment, because send signal UMTS Tx and send shared 1 power amplifier 14 of signal GSM Tx, therefore, compare with comparative example, the quantity of the power amplifier that comprises in the transtation mission circuit 7 can be reduced 1, therefore, transtation mission circuit 7 and comprise the mobile phone high-frequency circuit of this circuit can miniaturization and cost degradation.In addition, in the present embodiment, by balance converter 12, the transmission signal transformation of the unbalanced signal form that will be exported by the output port 11c of switch 11 becomes the transmission signal of balanced signal form, power amplifier 14 is being exported, therefore, as the power amplifier in the mobile phone, can use the imported power amplifier 14 of the balance that has proposed all multi-schemes in recent years.Have again, compare, can reduce by 1 power amplifier in the present embodiment, but need to increase by 2 switches 3,11 with comparative example.But the price of comparing switch with power amplifier is lower, therefore, compares with comparative example, and present embodiment can reduce cost.
In addition, as present embodiment, constitute 1 high frequency electronic component 10 that comprises switch 11 and balance converter 12, thereby switch 11 and balance converter 12 can be constituted as another element, compare with the situation that they are encapsulated on the substrate, can reduce the shared area of switch 11 in the transtation mission circuit 7 and balance converter 12.According to this point, present embodiment also can realize transtation mission circuit 7 and comprise the miniaturization of the mobile phone high-frequency circuit of this circuit.
In addition, the high frequency electronic component 10 of present embodiment is provided with multilayer board 20, and a plurality of conductor layers that balance converter 12 usefulness are located in the multilayer board 20 constitute, and switch 11 carries on multilayer board 20.Shown in Fig. 6 A to Figure 10 B, balance converter 12 can easily constitute with a plurality of conductor layers of being located in the multilayer board 20.Therefore, as present embodiment, constitute balance converter 12 by using a plurality of conductor layers of being located in the multilayer board 20, and switch 11 is carried in multilayer board 20, especially can reduce the occupied area of transtation mission circuit 7 medium-high frequency electronic units 10.So present embodiment can realize transtation mission circuit 7 and comprise the further miniaturization of the mobile phone high-frequency circuit of this circuit.
Here, for the structure of switch 11 in the high frequency electronic component 10 of present embodiment and whether need with signal path that switch 11 is connected on capacitor be set be elaborated.At first, as switch 11, can adopt switch that constitutes by MMIC or the switch that constitutes with PIN diode.In the switch that constitutes by MMIC, the switch of use depletion mode fet (to call FET in the following text) and the switch of use enhancement mode FET are arranged.In depletion type FET,, also can flow through drain current even grid voltage is 0.In enhancement mode FET, grid voltage is can not flow through drain current at 0 o'clock.As depletion type FET, the pHEMT (pseudo-High Electron Mobility Transistor) of GaAs system is for example arranged.As enhancement mode FET CMOS (complementary metal film semiconductor) is for example arranged.
As switch 11, if the switch that the switch that use is made of MMIC promptly constitutes with depletion type FET, perhaps use the switch that constitutes by PIN diode, then in principle need with each signal path that each port of switch 11 is connected on the capacitor that stops direct current to pass through is set.But, if the element that is connected with above-mentioned signal path has the function that stops direct current to pass through, and big for the tolerance of direct current, the capacitor that stops direct current to pass through then also can be set on this signal path.
As switch 11, if the switch that uses the switch constitute by MMIC promptly to constitute with enhancement mode FET, then not need with each signal path that each port of switch 11 is connected on the capacitor that the prevention direct current passes through is set.
Below, with reference to Figure 12, another structure of balance converter 12 is described.Balance converter 12 usefulness resonators shown in Figure 12 constitute.This balance converter 12 has 121,2 balance outputs 122,123 of 1 uneven input and 4 1/4 wave resonator 124,125,126,127.One end of 1/4 wave resonator 124 is connected with uneven input 121, and the other end of 1/4 wave resonator 124 is connected with an end of 1/4 wave resonator 125.One end of 1/4 wave resonator 126 is connected with balance output 122, and the other end of 1/4 wave resonator 126 is connected with ground.One end of 1/4 wave resonator 127 is connected with balance output 123, and the other end of 1/4 wave resonator 127 is connected with ground.1/4 wave resonator 126 and 124 couplings of 1/4 wave resonator, 1/4 wave resonator 127 and 125 couplings of 1/4 wave resonator.
Though the intervention attenuation of the balance converter 12 that is made of lc circuit shown in Figure 3 is little, the band region that the amplitude balance characteristic is good is narrow.On the other hand, adopt the intervention attenuation of the balance converter 12 that resonator shown in Figure 12 constitutes bigger, but the good band region of amplitude balance characteristic is wide.And in the balance converter 12 that uses resonator shown in Figure 12 to constitute, between uneven input 121 and balance output 122,123 direct current pass through be prevented from.Therefore, if use balance converter shown in Figure 12 12, then in principle with each signal path that each port is connected on, even need be provided with under the situation of switch that stops the capacitor that direct current passes through using, the capacitor that the prevention direct current passes through also can be set on the signal path between switch 11 and the balance converter 12 as switch 11.
The balance converter 12 that uses resonator shown in Figure 12 to constitute is the same with the balance converter 12 that is made of lc circuit shown in Figure 3, and a plurality of conductor layers that can enoughly be located in the multilayer board 20 constitute.
Below, with reference to Figure 13, the variation 1～3 of the high frequency electronic component of present embodiment is described.Figure 13 represents the part that comprises in the high frequency electronic component of each variation in the transtation mission circuit 7.The high frequency electronic component 10A of variation 1 also is provided with power amplifier 14 outside switch 11 and balance converter 12.In this high frequency electronic component 10A, power amplifier 14 also can be equipped on the top 20a of multilayer board 20.In addition, the input of power amplifier 14 is connected with the balance output of balance converter 12, and the output of power amplifier 14 is connected with the output of high frequency electronic component 10A.That is, power amplifier 14 is arranged between the output of the balance output of balance converter 12 and high frequency electronic component 10A.
The high frequency electronic component 10B of variation 2 also is provided with BPF13 outside switch 11 and balance converter 12.In this high frequency electronic component 10B, BPF13 also can be equipped on the top 20a of multilayer board 20.In addition, the input of BPF13 is connected with the input terminal that is transfused to the high frequency electronic component 10B that sends signal UMTS Tx, and the output of BPF13 is connected with the input port 11a of switch 11.That is, BPF13 is arranged on input port 11a and is transfused between the input terminal of the high frequency electronic component 10B that sends signal UMTS Tx.
The high frequency electronic component 10C of variation 3 also is provided with power amplifier 14 and BPE13 outside switch 11 and balance converter 12.In this high frequency electronic component 10C, power amplifier 14 and BPE13 also can be equipped on the top 20a of multilayer board 20.The input of power amplifier 14 is connected with the balance output of balance converter 12, and the output of power amplifier 14 is connected with the output of high frequency electronic component 10C.The input of BPF13 is connected with the input terminal that is transfused to the high frequency electronic component 10C that sends signal UMTS Tx, and the output of BPF13 is connected with the port one 1a of switch 11.
Below, the high frequency electronic component of embodiments of the present invention 2 is described with reference to Figure 14.Figure 14 represents to comprise the transtation mission circuit 7 of the high frequency electronic component 10 of present embodiment.In the present embodiment, IC2 is not by the unbalanced signal form but generates and export transmission signal GSM Tx by the balanced signal form.In the transtation mission circuit 7 of present embodiment, outside the component parts of the transtation mission circuit 7 of execution mode 1, also be provided with balance converter 15.This balance converter 15 has 2 balance inputs and 1 uneven output.2 balance inputs of balance converter 15 are connected with the terminal of the IC2 of the transmission signal GSM Tx of output balanced signal form.The uneven output of balance converter 15 is connected with the input terminal 10b of high frequency electronic component 10.Balance converter 15 is transformed into the transmission signal GSM Tx of balanced signal form the transmission signal GSM Tx and the output of unbalanced signal form.The circuit structure of balance converter 15 becomes 2 balance inputs except 2 balance outputs with balance converter 12, and 1 uneven input of balance converter 12 is become outside 1 uneven output, and all the other are identical with balance converter 12.
The high frequency electronic component 10 of present embodiment is used for the transtation mission circuit 7 that the transmission signal UMTS Tx to the transmission signal GSM Tx of balanced signal form and unbalanced signal form handles.The structure of the high frequency electronic component 10 of present embodiment is identical with the high frequency electronic component 10 of execution mode 1.
In the present embodiment, by the transmission signal UMTS Tx of the unbalanced signal form of IC2 output by BPF13, the input port 11a of the switch 11 of input high frequency electronic component 10.Be transformed into the transmission signal GSM Tx of unbalanced signal form by the transmission signal GSM Tx of the balanced signal form of IC2 output by balance converter 15, the transmission signal GSM Tx of this unbalanced signal form is transfused to the input port 11b of switch 11.
Below, by the effect of present embodiment relatively being described with comparative example 1～3.Figure 15 is the block diagram of circuit structure of the transtation mission circuit of expression comparative example 1.The transtation mission circuit of this comparative example 1 is provided with 2 power amplifier 34A, 14B and 2 output 16A, and 16B replaces balance converter 15, switch 11, balance converter 12, power amplifier 14 and output 7c in the transtation mission circuit shown in Figure 14.In the transtation mission circuit of comparative example 1, amplify by power amplifier 34A by the transmission signal UMTS Tx of the unbalanced signal form of BPF13 output, and export by output 16A.In addition, amplified by power amplifier 14B by the transmission signal GSM Tx of the balanced signal form of IC2 output, the transmission signal GSM Tx as the unbalanced signal form is exported by output 16B.Be transfused to the BPF4b of antenna multicoupler shown in Figure 11 4 by the transmission signal UMTS Tx of output 16A output.In addition, be transfused to the port one c of switch shown in Figure 11 1 by the transmission signal GSM Tx of output 16B output.
Need two power amplifiers that price is higher in comparative example shown in Figure 15 1, it has consequently hindered transtation mission circuit and has comprised the miniaturization and the cost degradation of the mobile phone high-frequency circuit of this circuit.And in the present embodiment, send signal UMTS Tx and send shared 1 power amplifier 14 of signal GSM Tx, therefore compare with comparative example 1, can make the quantity of the power amplifier that comprises in the transtation mission circuit 7 reduce 1, its consequently, transtation mission circuit 7 and comprise the mobile phone high-frequency circuit Miniaturizable and the cost degradation of this circuit.
Figure 16 is the block diagram of circuit structure of the transtation mission circuit of expression comparative example 2.The transtation mission circuit of this comparative example 2 is provided with balance converter 31 and 2 switches 32,33, replaces balance converter 15, switch 11 and balance converter 12 in the transtation mission circuit shown in Figure 14.Balance converter 31 has 1 uneven input and 2 balance outputs.The uneven input of balance converter 31 is connected with the output of BPF13.Switch 32 has 2 input port 32a, 32b and 1 output port 32c, with output port 32c selectively with input port 32a, the arbitrary port among the 32b connects.Switch 33 has 2 input port 33a, 33b and 1 output port 33c, with output port 33c selectively with input port 33a, the arbitrary port among the 33b connects.Input port 32a is connected with the balance output of balance converter 31 with input port 33a.Will be by the transmission signal GSM Tx fan-in mouth 32b and the input port 33b of the balanced signal form of IC2 output.Output port 32c and output port 33c are connected with the balance input of power amplifier 14.
Transtation mission circuit at comparative example shown in Figure 16 2 needs two switches.Compare with comparative example 2,, can make the quantity of switch reduce 1 though the quantity of balance converter increases by 1 in the present embodiment.Compare with switch, balance converter can be made with low cost, and can miniaturization.Therefore, compare with comparative example 2, miniaturization and cost degradation that present embodiment also can make transtation mission circuit 7 and comprise the mobile phone high-frequency circuit of this circuit become possibility.
Figure 17 is the block diagram of circuit structure of the transtation mission circuit of expression comparative example 3.The transtation mission circuit of this comparative example 3 is provided with the switch 35 that switches balanced signal, replaces the switch 32,33 in the comparative example 2 shown in Figure 16.Switch 35 has 4 input port 35a, 35b, 35c, 35d and 2 output port 35e, 35f, can output port 35e is connected with input port 35a and output port 35f is connected with input port 35b state and output port 35e is connected with input port 35c and output port 35f and state that input port 35d is connected between switch.Input port 35a, 35b is connected with the balance output of balance converter 31.Transmission signal GSM Tx by the balanced signal form of IC2 output is transfused to input port 35c, 35d.Output port 35e, 35f is connected with the balance input of power amplifier 14.
In the transtation mission circuit of comparative example shown in Figure 17 3, need to switch the switch 35 of balanced signal.Compare with the switch that switches unbalanced signal, the switch price of switching balanced signal is higher.Compare with comparative example 3,, can use the low price switch 11 of conversion unbalanced signal though the quantity of balance converter increases by 1 in the present embodiment, rather than the high price switch 35 of shifting balance signal.In addition, can make balance converter with low cost.Therefore,, compare with comparative example 3 according to present embodiment, transtation mission circuit 7 and comprise the mobile phone high-frequency circuit of this circuit can cost degradation.
Have, the same with the variation 1～3 of execution mode 1, the high frequency electronic component of present embodiment also is provided with at least one side among power amplifier 14 and the BPF13 outside switch 11 and balance converter 12 again.In addition, the high frequency electronic component of present embodiment also can be provided with balance converter 15.In this case, balance converter 15 is corresponding to the 2nd balance converter of the present invention.Be provided with at high frequency electronic component under the situation of balance converter 15, the same with balance converter 12, balance converter 15 can constitute with a plurality of conductor layers of being located in the multilayer board 20.Other structure, effect and effect in the present embodiment are identical with execution mode 1.
Below, the high frequency electronic component of embodiments of the present invention 3 is described with reference to Figure 18.Figure 18 represents to comprise the transtation mission circuit 7 of the high frequency electronic component 40 of present embodiment.The high frequency electronic component 40 of present embodiment is used for the transmission signal UMTS Tx1 to 2 UMTS modes, the transtation mission circuit 7 that UMTS Tx2 and transmission signal GSM Tx handle.If send signal GSM Tx in the present embodiment is the transmission signal of at least one side among GSM850 (AGSM) and the GSM900 (EGSM), then send signal UMTS Tx1, UMTS Tx2 is frequency band and GSM850 (AGSM) and GSM900 (EGSM) approaching wave band V, VI, the transmission signal of 2 the different wave bands among the VIII.In addition, if sending signal GSM Tx is the transmission signal of at least one side among GSM1800 (DCS) and the GSM1900 (PCS), then send signal UMTS Tx1, UMTS Tx2 is the transmission signal of 2 the different wave bands among frequency band and GSM1800 (DCS) and GSM1900 (PCS) approaching wave band I, II, III, IV, IX, the X.In the high-frequency circuit of the transtation mission circuit 7 that comprises present embodiment, IC2 generates and exports the transmission signal UMTS Tx1 of unbalanced signal form respectively, the transmission signal GSM Tx of the GSM mode of UMTS Tx2 and balance signal aspect.
The transtation mission circuit 7 of present embodiment is provided with 2 BPF13A, and 13B replaces the BPF13 of execution mode 2, and is provided with the high frequency electronic component 40 of present embodiment, replaces the high frequency electronic component 10 of execution mode 2.By the transmission signal UMTS Tx1 of IC2 output, UMTS Tx2 imports BPF13A, 13B respectively.
High frequency electronic component 40 is provided with: input terminal 40a, 40b, 40c; Lead-out terminal 40d1,40d2; Switch 41; And balance converter 12.Switch 41 has 3 input port 41a, 41b, 41c and 1 output port 41d, with output port 41d selectively with input port 41a, 41b, the arbitrary port among the 41c connects.
In the transtation mission circuit 7 that comprises high frequency electronic component 40, by the transmission signal UMTS Tx1 of the unbalanced signal form of IC2 output by BPF13A, input terminal 40a, the input port 41a of input switch 41.By the transmission signal UMTS Tx2 of the unbalanced signal form of IC2 output by BPF13B, input terminal 40b, the input port 41b of input switch 41.By the transmission signal GSM Tx of the balanced signal form of IC2 output by balance converter 15, be transformed into the transmission signal GSM Tx of unbalanced signal form, the transmission signal GSM Tx of this unbalanced signal form is by input terminal 40c, the input port 41c of input switch 41.Switch 41 switches between the transmission signal GSM Tx of the unbalanced signal form of the transmission signal UMTS Tx2 of the unbalanced signal form of the transmission signal UMTS of the unbalanced signal form of fan-in mouth 41a Tx1, fan-in mouth 41b and fan-in mouth 41c, and exports balance converter 12 to by output port 41d.The transmission signal GSM Tx of the transmission signal UMTS Tx1 of unbalanced signal form, the transmission signal UMTS Tx2 of unbalanced signal form and unbalanced signal form is all corresponding to a plurality of high-frequency signals of unbalanced signal form of the present invention.The transmission signal transformation of the unbalanced signal form that balance converter 12 will be exported by the output port 41d of switch 41 becomes the transmission signal of balanced signal form, and exports the imported power amplifier 14 of balance with the transmission signal amplification of this balanced signal form to.The transmission signal of input power amplifier 14 amplifies through power amplifier 14, as the transmission signal of unbalanced signal form, exports the output 7c of transtation mission circuit 7 to.Have, output 7c is connected with the input port of the switch (not shown) with 1 input port and 3 output ports in the present embodiment again.This switch makes the arbitrary port in 3 output ports be connected with input port selectively, and with the transmission signal UMTS Tx1 of fan-in mouth, UMTS Tx2, GSM Tx are respectively through different output port output.
The same with the high frequency electronic component 10 of execution mode 1, a plurality of conductor layers that the high frequency electronic component of present embodiment 40 can enoughly be located in the multilayer board 20 constitute balance converters 12, and carry switch 41 and constitute on multilayer board 20.
Below, by the effect of present embodiment relatively being described with comparative example 1～3.Figure 19 is the block diagram of circuit structure of the transtation mission circuit of expression comparative example 1.The transtation mission circuit of comparative example 1 is provided with 3 power amplifier 42A, 42B, and 42C and 3 output 43A, 43B, 43C replaces balance converter 15, switch 41, balance converter 12, power amplifier 14 and output 7c in the transtation mission circuit shown in Figure 180.In the transtation mission circuit of comparative example 1, amplify through power amplifier 42A by the transmission signal UMTS Tx1 of the unbalanced signal form of BPF13A output, and export from output 43A.Transmission signal UMTS Tx2 by the unbalanced signal form of BPF13B output amplifies through power amplifier 42B, exports from output 43B.In addition, amplify through power amplifier 42C, export from output 43C as the transmission signal GSM Tx of unbalanced signal form by the transmission signal GSM Tx of the balanced signal form of IC2 output.
In comparative example shown in Figure 19 1, need 3 power amplifiers that price is higher, it has consequently hindered transtation mission circuit and the miniaturization and the cost degradation that comprise the mobile phone high-frequency circuit of this circuit.And in the present embodiment, send signal UMTS Tx1, UMTSTx2, shared 1 power amplifier 14 of GSM Tx, so, compare with comparative example 1, can make the quantity of the power amplifier that comprises in the transtation mission circuit 7 reduce two, its consequently, transtation mission circuit 7 and comprise the mobile phone high-frequency circuit of this circuit can miniaturization and cost degradation.
Figure 20 is the block diagram of circuit structure of the transtation mission circuit of expression comparative example 2.The transtation mission circuit of this comparative example 2 is provided with 2 balance converter 51A, and 51B and switch 52 replace balance converter 15, switch 41 and balance converter 12 in the transtation mission circuit shown in Figure 180. Balance converter 51A, 51B are respectively equipped with 1 uneven input and 2 balance outputs.Switch 52 has 6 input port 52a, 52b, 52c, 52d, 52e, 52f and 2 output port 52g, 52h.Switch 52 can switch between following three states: the state that output port 52g is connected with input port 52a and output port 52h is connected with input port 52b; The state that output port 52g is connected with input port 52c and output port 52h is connected with input port 52d; And output port 52g is connected the state that output port 52h is connected with input port 52f with input port 52e.
The uneven input of balance converter 51A is connected with the output of BPF13A.The uneven input of balance converter 51B is connected with the output of BPF13B.2 the balance outputs of balance converter 51A and the input port 52a of switch 52,52b connects.2 the balance outputs of balance converter 51B and the input port 52c of switch 52,52d connects.Be transfused to the input port 52e of switch 52,52f by the transmission signal GSM Tx of the balanced signal form of IC2 output.The output port 52g of switch 52,52h is connected with the balance input of power amplifier 14.
In the comparative example 2 shown in Figure 20, need the high price switch 52 of shifting balance signal.In the present embodiment, can use the low price switch 41 that switches unbalanced signal, rather than switch the high price switch 52 of balanced signal.Therefore, compare with comparative example 2, present embodiment can realize transtation mission circuit 7 and comprise the cost degradation of the mobile phone high-frequency circuit of this circuit.
Figure 21 is the block diagram of circuit structure of the transtation mission circuit of expression comparative example 3.The transtation mission circuit of this comparative example 3 is provided with switch 63, balance converter 61 and switch 62, replaces balance converter 15, switch 41 and balance converter 12 in the transtation mission circuit shown in Figure 180.Switch 63 has the input port 63a that is connected with the output of BPF13A, the input port 63b that is connected with the output of BPF13B and output port 63c, with output port 63c selectively with input port 63a, the arbitrary port among the 63b connects.Balance converter 61 has 1 uneven input and 2 balance outputs.The uneven input of balance converter 61 is connected with the output port 63c of switch 63.
In comparative example shown in Figure 21 3, need the high price switch 62 that switches balanced signal, and two switches need be set between IC2 and power amplifier 14.Can use the low price switch 41 that switches unbalanced signal in the present embodiment, as long as and the switch of setting between IC2 and power amplifier 14 have 1.Therefore,, compare with comparative example 3 according to present embodiment, transtation mission circuit 7 and comprise the mobile phone high-frequency circuit of this circuit can cost degradation.
Have, the same with the variation 1～3 of execution mode 1, the high frequency electronic component of present embodiment can be provided with power amplifier 14 outside switch 41 and balance converter 12, also can be provided with BPF13A again, and 13B also can be provided with power amplifier 14 and BPF13A, 13B.In addition, the high frequency electronic component of present embodiment also can be provided with balance converter 15.In this case, the same with balance converter 12, balance converter 15 can constitute with a plurality of conductor layers of being located in the multilayer board 20.Other structure, effect and effect in the present embodiment are identical with execution mode 2.
Below, the high frequency electronic component of embodiments of the present invention 4 is described with reference to Figure 22.Figure 22 represents to comprise the transtation mission circuit 7 of the high frequency electronic component 70 of present embodiment.The high frequency electronic component 70 of present embodiment is the transmission signal UMTS-LTx that is used for 3 UMTS modes, UMTS-H Tx1, UMTS-H Tx2 and 2 transmission signal GSM-L Tx, the transtation mission circuit 7 that GSM-HTx handles.Send the transmission signal that signal GSM-L Tx contains at least one side among approaching GSM850 (AGSM) of 4 system's midbands shown in the table 1 and the GSM900 (EGSM).Send the transmission signal that signal GSM-H Tx contains at least one side among approaching GSM1800 (DCS) of 4 system's midbands shown in the table 1 and the GSM1900 (PCS).Send signal UMTS-L Tx and be frequency band and GSM850 (AGSM) and GSM900 (EGSM) approaching wave band V, VI, any one transmission signal among the VIII.Send signal UMTS-H Tx1, UMTS-H Tx2 is the transmission signal of 2 the different wave bands among frequency band and GSM1800 (DCS) and GSM1900 (PCS) approaching wave band I, II, III, IV, IX, the X.In the high-frequency circuit of the transtation mission circuit 7 that comprises present embodiment, IC2 generates and exports the transmission signal UMTS-L Tx of the UMTS mode of each unbalanced signal form, UMTS-H Tx1, the transmission signal GSM-L Tx of the GSM mode of UMTS-HTx2 and each balanced signal form, GSM-H Tx.
The transtation mission circuit 7 of present embodiment is provided with: the high frequency electronic component 70 of present embodiment; 3 BPF72,75,76; 2 balance converters 73,77; 2 power amplifier 14L, 14H; And 2 output 7L, 7H.By the transmission signal UMTS-L Tx of IC2 output, UMTS-H Tx1, UMTS-H Tx2 imports BPF72,75,76 respectively.
High frequency electronic component 70 is provided with input terminal 70a, 70b, 70c, 70d, 70e; Lead-out terminal 70f1,70f2,70g1,70g2; Switch 71,74; And balance converter 12L, 12H.
In the transtation mission circuit 7 that comprises high frequency electronic component 70, by the transmission signal UMTS-L Tx of the unbalanced signal form of IC2 output by BPF72, input terminal 70a and the input port 71a of input switch 71.Be transformed into the transmission signal GSM-L Tx of unbalanced signal form through balance converter 73 by the transmission signal GSM-L Tx of the balanced signal form of IC2 output.The transmission signal GSM-L Tx of this unbalanced signal form is by the input port 71b of input terminal 70b input switch 71.Switch 71 switches between the transmission signal GSM-L Tx of the unbalanced signal form of the transmission signal UMTS-L Tx of the unbalanced signal form of fan-in mouth 71a and fan-in mouth 71b, and exports balance converter 12L to by output port 71c.The transmission signal GSM-L Tx of the transmission signal UMTS-L Tx of unbalanced signal form and unbalanced signal form is corresponding to a plurality of high-frequency signals of unbalanced signal form of the present invention.The transmission signal transformation of the unbalanced signal form that balance converter 12L will export from the output port 71c of switch 71 becomes the transmission signal of balanced signal form, and exports the imported power amplifier 14L of balance with the transmission signal amplification of this balanced signal form to.The transmission signal of input power amplifier 14L amplifies through power amplifier 14L, exports the output 7L of transtation mission circuit 7 to as the transmission signal of unbalanced signal form.
In addition, by the transmission signal UMTS-H Tx1 of the unbalanced signal form of IC2 output by BPF75, input terminal 70c and the input port 74a of input switch 74.By the transmission signal UMTS-H Tx2 of the unbalanced signal form of IC2 output, the input port 74b of input switch 74 by BPF76, input terminal 70d.Be transformed into the transmission signal GSM-H Tx of unbalanced signal form by balance converter 77 by the transmission signal GSM-H Tx of the balanced signal form of IC2 output.The transmission signal GSM-H Tx of this unbalanced signal form passes through input terminal 70e and the input port 74c of input switch 74.Switch 74 switches between the transmission signal GSM-H Tx of the unbalanced signal form of the transmission signal UMTS-H Tx2 of the unbalanced signal form of the transmission signal UMTS-H of the unbalanced signal form of fan-in mouth 74a Tx1, fan-in mouth 74b and fan-in mouth 74c, exports balance converter 12H to by output port 74d.The transmission signal GSM-H Tx of the transmission signal UMTS-H Tx1 of unbalanced signal form, the transmission signal UMTS-H Tx2 of unbalanced signal form and unbalanced signal form is corresponding to a plurality of high-frequency signals of unbalanced signal form of the present invention.The transmission signal transformation of the unbalanced signal form that balance converter 12H will export from the output port 74d of switch 74 becomes the transmission signal of balanced signal form, and exports the imported power amplifier 14H of balance with the transmission signal amplification of this balanced signal form to.After the transmission signal of input power amplifier 14H is amplified by power amplifier 14H, export the output 7H of transtation mission circuit 7 to as the transmission signal of unbalanced signal form.
Have, in the present embodiment, output 7L is connected with the input port of the switch (not shown) with 1 input port and 2 output ports again.This switch makes the arbitrary port in 2 output ports be connected with input port selectively, and respectively by the transmission signal UMTS-L Tx of different output ports with the fan-in mouth, GSM-L Tx output.In addition, output 7H is connected with the input port of the switch (not shown) with 1 input port and 3 output ports.This switch makes the arbitrary port in 3 output ports be connected with input port selectively, and respectively by the transmission signal UMTS-H Tx1 of different output ports with the fan-in mouth, UMTS-H Tx2, GSM-H Tx output.
The same with the high frequency electronic component 10 of execution mode 1, the high frequency electronic component 70 of present embodiment can be by constituting balance converter 12L with a plurality of conductor layers that be located in the multilayer board 20,12H, and on multilayer board 20, carry switch 71,74 and constitute.
Below, by the effect of present embodiment relatively being described with comparative example 1～2.Figure 23 is the block diagram of circuit structure of the transtation mission circuit of expression comparative example 1.The transtation mission circuit of comparative example 1 is provided with 5 power amplifier 78A, 78B, 78C, 78D, 78E and 5 output 79A, 79B, 79C, 79D, 79E replaces the balance converter 73 in the transtation mission circuit shown in Figure 22,77, switch 71,74, power amplifier 14L, 14H and output 7L, 7H.In the transtation mission circuit of comparative example 1, amplify by power amplifier 78A by the transmission signal UMTS-L Tx of the unbalanced signal form of BPF72 output, and export by output 79A.Transmission signal GSM-L Tx by the balanced signal form of IC2 output amplifies through power amplifier 78B, is exported by output 79B as the transmission signal GSM-L Tx of unbalanced signal form.Transmission signal UMTS-H Tx1 by the unbalanced signal form of BPF75 output amplifies through power amplifier 78C, is exported by output 79C.Transmission signal UMTS-H Tx2 by the unbalanced signal form of BPF76 output amplifies through power amplifier 78D, is exported by output 79D.Transmission signal GSM-H Tx by the balanced signal form of IC2 output amplifies by power amplifier 78E, exports from output 79E as the transmission signal GSM-H Tx of unbalanced signal form.
In comparative example shown in Figure 23 1, need 5 power amplifiers that price is higher, consequently, hindered transtation mission circuit and comprised the miniaturization and the cost degradation of the mobile phone high-frequency circuit of this circuit.And in the present embodiment, the transmission signal UMTS-L Tx that frequency band is approaching, shared 1 the power amplifier 14L of GSM-L Tx, the transmission signal UMTS-HTx1 that frequency band is approaching, UMTS-H Tx2, shared 1 the power amplifier 14H of GSM-H Tx, therefore, compare, can make the quantity of the power amplifier that comprises in the transtation mission circuit 7 reduce 3 with comparative example 1, consequently, transtation mission circuit 7 and the mobile phone high-frequency circuit that comprises this circuit can be realized miniaturization and cost degradation.
Figure 24 is the block diagram of circuit structure of the transtation mission circuit of expression comparative example 2.The transtation mission circuit of this comparative example 2 is provided with balance converter 81,83, and 84 and switch 82,85, replace balance converter 73,77 and switch 71,74 in the transtation mission circuit shown in Figure 22.Balance converter 81,83,84 are respectively equipped with 1 uneven input and 2 balance outputs.Switch 82 has 4 input port 82a, 82b, 82c, 82d and 2 output port 82e, 82f.Switch 82 can output port 82e is connected with input port 82a and output port 82f is connected with input port 82b state and output port 82e is connected with input port 82c and output port 82f and state that input port 82d is connected between switch.Switch 85 has 6 input port 85a, 85b, 85c, 85d, 85e, 85f and 2 output port 85g, 85h.Switch 85 can output port 85g is connected with input port 85a and output port 85h is connected with input port 85b state, output port 85g is connected with input port 85c and output port 85h is connected with input port 85d state and output port 85g is connected with input port 85e and output port 8h and state that input port 85f is connected between switch.
The uneven input of balance converter 81 is connected with the output of BPF72.The balance output of balance converter 81 and the input port 82a of switch 82,82b connects.Be transfused to the input port 82c of switch 82,82d by the transmission signal GSM-L Tx of the balanced signal form of IC2 output.The output port 82e of switch 82,82f is connected with the balance input of power amplifier 14L.The uneven input of balance converter 83 is connected with the output of BPF75.The balance output of balance converter 83 and the input port 85a of switch 85,85b connects.The uneven input of balance converter 84 is connected with the output of BPF76.The balance output of balance converter 84 and the input port 85c of switch 85,85d connects.Be transfused to the input port 85e of switch 85,85f by the transmission signal GSM-H Tx of the balanced signal form of IC2 output.The output port 85g of switch 85,85h is connected with the balance input of power amplifier 14H.
In comparative example shown in Figure 24 2, need two high price switches that switch balanced signal.Can use the low price switch 71,74 that switches unbalanced signal in the present embodiment, rather than switch the high price switch 82,85 of balanced signal.Therefore, compare with comparative example 2, present embodiment can realize transtation mission circuit 7 and comprise the cost degradation of the mobile phone high-frequency circuit of this circuit.
Have, the same with variation 1～3 in the execution mode 1, the high frequency electronic component of present embodiment is at switch 71 again, 74 and balance converter 12L, outside the 12H, can be provided with power amplifier 14L, 14H, also can be provided with BPF72,75,76, perhaps also can be provided with power amplifier 14L, 14H and BPF72,75,76.In addition, the high frequency electronic component of present embodiment also can be provided with balance converter 73,77.In this case, balance converter 73,77 is corresponding to the 2nd balance converter of the present invention.If high frequency electronic component is provided with balance converter 73,77, then with balance converter 12L, 12H is the same, and available a plurality of conductor layers of being located in the multilayer board 20 constitute balance converter 73,77.Other structure, effect and the effect of present embodiment are identical with execution mode 1.
Embodiments of the present invention 5 below are described.One of the mobile phone high-frequency circuit example of the high frequency electronic component that comprises present embodiment at first, is described with reference to Figure 25.Figure 25 is the block diagram of the circuit structure of one of expression high-frequency circuit example.This high-frequency circuit is handled the signal of 2 GSM modes.
High-frequency circuit shown in Figure 25 is provided with antenna 501, switch 401 and IC402.Switch 401 has 4 port 401a, 401b, 401c, 401d, port 401a selectively with port 401b, 401c, the arbitrary port among the 401d connects.Port 401a is connected with antenna 501.
IC402 is the circuit that mainly carries out the signal modulation and demodulation.IC402 generates and exports the transmission signal GSM Tx1 of 2 GSM modes, GSM Tx2 in the present embodiment.The transmission signal GSM Tx1 of IC402 output, GSM Tx2 is the balanced signal form.In addition, IC402 receives the received signal GSM Rx1 of 2 GSM modes, GSM Rx2.The received signal GSM Rx1 that IC402 receives, GSM Rx2 is the balanced signal form.In addition, IC402 has terminal 402a1,402a2,402b1,402b2.Send signal GSM Tx1, GSM Tx2 is by terminal 402a1, and 402a2 exports.Received signal GSM Rx1, GSM Rx2 input terminal 402b1,402b2.
In the present embodiment, if sending signal GSM Tx1 and received signal GSM Rx1 is approaching GSM850 (AGSM) of 4 system's midbands shown in the table 1 and the side's among the GSM900 (EGSM) transmission signal and received signal, then sending signal GSMTx2 and received signal GSM Rx2 is transmission signal and the received signal of the opposing party among GSM850 (AGSM) and the GSM900 (EGSM).In addition, if sending signal GSM Tx1 and received signal GSM Rx1 is approaching GSM1800 (DCS) of 4 system's midbands shown in the table 1 and the side's among the GSM1900 (PCS) transmission signal and received signal, then sending signal GSMTx2 and received signal GSM Rx2 is transmission signal and the received signal of the opposing party among GSM1800 (DCS) and the GSM1900 (PCS).
High-frequency circuit also is provided with balance converter 403, power amplifier 404, LPF405 and receiving circuit 406.Balance converter 403 has 2 balance inputs and 1 uneven output.2 balance inputs of balance converter 403 and the terminal 402a1 of IC402,402a2 connects.Power amplifier 404 has 1 uneven input and 1 uneven output.The uneven input of power amplifier 404 is connected with the uneven output of balance converter 403.The uneven output of power amplifier 404 is connected with the port 401b of switch 401 via LPF405.
Figure 26 represents the circuit structure of receiving circuit 406.406 pairs of a plurality of received signals as a plurality of high-frequency signals of receiving circuit are received signal GSM Rx1, and GSM Rx2 handles.Receiving circuit 406 is corresponding to signal processing circuit of the present invention.Receiving circuit 406 is provided with input 406a, 406b and output 406c1,406c2.Input 406a is connected with the port 401c of switch 401.Input 406b is connected with the port 401d of switch 401.Output 406c1 is connected with the terminal 402b1 of IC402.Output 406c2 is connected with the terminal 402b2 of IC402.
In addition, receiving circuit 406 is provided with switch 411,412,2 BPF413A of balance converter, 413B and differential input and output type low noise amplifier 414.Switch 411 has 2 input port 411a, 411b and 1 output port 411c, with output port 411c selectively with input port 411a, the arbitrary port among the 411b connects.Balance converter 412 has 1 uneven input and 2 balance outputs.The input port 411a of switch 411 is connected with the input 406a of receiving circuit 406 via BPF413A.The input port 411b of switch 411 is connected with the input 406b of receiving circuit 406 via BPF413B.The output port 411c of switch 411 is connected with the uneven input of balance converter 412.
Switch 411 also can for example be made of MMIC, can also constitute with PIN diode.Balance converter 412 also can for example be made of the lc circuit that adopts inductor and capacitor, and also available resonator constitutes.BPF413A, 413B also can for example be made of acoustic surface wave element.Low noise amplifier 414 also can for example be made of MMIC.
Figure 27 is the circuit diagram of the circuit structure of expression high frequency electronic component 410.High frequency electronic component 410 is provided with: input terminal 410a, 410b; Lead-out terminal 410c1,410c2; Above-mentioned switch 411; And balance converter 4I2.Input terminal 410a is connected with the output of BPF413A and the input port 411a of switch 411.Input terminal 410b is connected with the output of BPF413B and the input port 411b of switch 411.In addition, lead-out terminal 410c1,2 balance outputs of 410c2 and balance converter 412 and 2 differential input terminals of low noise amplifier 414 are connected.Switch 411 has the control signal VC11 that input is used for control switch 411, the control terminal 411d of VC12,411e.
Figure 27 represents the example that balance converter 412 is made of the lc circuit that uses inductor and capacitor.In this example, balance converter 412 has 2 inductor L11, L12 and 2 capacitor C11, C12.The end of inductor L11 is connected with the uneven input of balance converter 412 with the end of capacitor C11.The other end of inductor L11 is connected with the balance output of the balance converter 412 that is connected lead-out terminal 410c2, and is connected with ground via capacitor C12.The other end of capacitor C11 is connected with the balance output of the balance converter 412 that is connected lead-out terminal 410c1, and is connected with ground via inductor L12.
In addition, in example shown in Figure 27, high frequency electronic component 410 is provided with the capacitor C13 on the signal path between the uneven input of the output port 411c that is arranged on switch 411 and balance converter 412.Capacitor C13 is used to prevent to result from control signal VC11, and the direct current of VC12 flows into the signal path that is connected with output port 411c.In addition, in example shown in Figure 27, on the input port 411b of the input port 411a of switch 411 and signal path between the input terminal 410a and switch 411 and the signal path between the input terminal 410b, capacitor is not set.This be because: with input terminal 410a, the BPF413A that 410b connects, 413B have the function that stops direct current to pass through.Resulting from control signal VC11, the direct current of VC12 is by input port 411a, under the situation that 411b produces, promptly at BPF413A, 413B does not have situation or the BPF413A that stops the function that direct current passes through, 413B is under the little situation of the tolerance of direct current, also can on the input port 411b of the input port 411a of switch 411 and signal path between the input terminal 410a and switch 411 and the signal path between the input terminal 410b capacitor that stops direct current to pass through be set.In addition, if with signal path that output port 411c is connected on do not need to stop and result from control signal VC11, the direct current of VC12 passes through, and then also capacitor C13 can be set.With the port 411a of switch 411,411b, on each signal path that 411c connects, if needing on its signal path to stop results from control signal VC11, the direct current of VC12 passes through, and capacitor then is set.The structure of switch 411 is identical with the switch 11 of execution mode 1.In addition, for whether need with the port 411a of switch 411, the situation of capacitor is set on each signal path that 411b, 411c connect, with whether need with signal path that the switch 11 that illustrated in the execution mode 1 is connected on that the situation of capacitor is set is identical.Have again, in Figure 25 and Figure 26, omitted the diagram of capacitor C13.
Below, the effect of the high-frequency circuit of the high frequency electronic component 410 that comprises present embodiment is described.IC402 generates and exports the transmission signal GSM Tx1 that is the balanced signal form, GSMTx2.Sending signal GSM Tx1 or sending signal GSM Tx2 when being sent out, the port 401a of switch 401 is connected with port 401b.At this state, by the transmission signal GSM Tx1 of the balanced signal form of IC402 output or send signal GSM Tx2 and be transformed into the transmission signal GSM Tx1 of unbalanced signal form or send signal GSM Tx2 by balance converter 403, present to antenna 501 via power amplifier 404, LPF405 and switch 401 successively then, send by antenna 501.
When received signal GSM Rx1 was received, the port 401a of switch 401 was connected with port 401c.At this state, the received signal GSMRx1 of the unbalanced signal form that is received by antenna 501 imports the input port 411a of the switch 411 of high frequency electronic component 410 by switch 401 and BPF413A.
When received signal GSM Rx2 was received, the port 401a of switch 401 was connected with port 401d.At this state, the received signal GSMRx2 of the unbalanced signal form that is received by antenna 501 imports the input port 411b of the switch 411 of high frequency electronic component 410 by switch 401 and BPF413B.
In the high frequency electronic component 410 of present embodiment, switch between the received signal GSM Rx2 of the received signal GSM Rx1 of the unbalanced signal form of fan-in mouth 411a and fan-in mouth 411b unbalanced signal form by switch 411, and export by output port 411c, to be transformed into the received signal of balanced signal form by the received signal of the unbalanced signal form of the output port 411c of switch 411 output by balance converter 412, export the differential input and output type low noise amplifier 414 that the received signal of this balanced signal form is amplified to.Thus,,, in the receiving circuit 406 that GSM Rx2 handles, can use differential input and output type low noise amplifier 414, consequently, receiving sensitivity is improved to 2 received signal GSM Rx1 according to present embodiment.In addition, according to present embodiment, can reduce the quantity of the low noise amplifier that comprises in the receiving circuit 406, consequently, receiving circuit 406 can be realized miniaturization and cost degradation.
Below, the structure of the high frequency electronic component 410 of present embodiment is described.Figure 28 is the perspective view of the outward appearance of expression high frequency electronic component 410.Figure 29 is the plane graph of high frequency electronic component 410.As Figure 28 and shown in Figure 29, high frequency electronic component 410 is provided with the incorporate multilayer board 420 of each element that makes high frequency electronic component 410.Hereinafter will describe in detail, multilayer board 420 comprises stacked a plurality of dielectric layers.In addition, multilayer board 420 has top 420a, bottom surface 420b and 4 sides, forms rectangular shape.
The circuit of high frequency electronic component 410 uses the element of the top 420a that is located at conductor layer, the above-mentioned dielectric layer in the multilayer board 420 and is equipped on multilayer board 420 to constitute.Here, as an example, 420a carries switch 411 and capacitor C13 in the above.
Below, with reference to Figure 30 A to Figure 34 B, describe dielectric layer and conductor layer in the multilayer board 420 in detail.Figure 30 A and Figure 30 B represent respectively above last the 1st layer, the 2nd layer dielectric layer.Figure 31 A and Figure 31 B represent respectively above last the 3rd layer, the 4th layer dielectric layer.Figure 32 A and Figure 32 B represent respectively above last the 5th layer, the 6th layer dielectric layer.Figure 33 A and Figure 33 B represent respectively above last the 7th layer, the 8th layer dielectric layer.Figure 34 A represents above last the 9th layer of dielectric layer.Figure 34 B be illustrated in from state under from last the 9th layer of dielectric layer and under conductor layer.Circle mark among Figure 30 A to Figure 34 B is represented through hole.
On the 1st layer shown in Figure 30 A is above the dielectric layer 421, form conductor layer 611A～611G that is connected in switch 411 and the conductor layer 613A that is connected in capacitor C13,613B.Conductor layer 611A is connected with the port 411a of switch 411.Conductor layer 611C is connected with the port 411b of switch 411.Conductor layer 611E is connected with the port 411c of switch 411.Conductor layer 611F is connected with the control terminal 411d of switch 411.Conductor layer 61D is connected with the control terminal 411e of switch 411. Conductor layer 611B, 611G is connected with the ground of switch 411.In addition, on dielectric layer 421, form a plurality of through holes that are connected with above-mentioned each conductor layer.
On the 2nd layer shown in Figure 30 B is above the dielectric layer 422, form conductor layer 621,622,623,624,625.Conductor layer 611A is connected with conductor layer 621 via the through hole that forms on the dielectric layer 421.Conductor layer 611D is connected with conductor layer 622 via the through hole that forms on the dielectric layer 421.Conductor layer 611F is connected with conductor layer 623 via the through hole that forms on the dielectric layer 421.Conductor layer 611C is connected with conductor layer 624 via the through hole that forms on the dielectric layer 421. Conductor layer 611E, 613B are connected with conductor layer 625 via the through hole that forms on the dielectric layer 421 respectively.In addition, on dielectric layer 422, form respectively and conductor layer 621,622,623,624 through hole and other a plurality of through holes that connect.
On the 3rd layer shown in Figure 31 A is above the dielectric layer 423, form capacitor conductor layer 631 and conductor layer for grounding 632.Conductor layer 613A is connected with conductor layer 631 via the through hole that forms on the dielectric layer 421,422. Conductor layer 611B, 611G is connected with conductor layer 632 via the through hole that forms on the dielectric layer 421,422.In addition, on dielectric layer 423, form respectively through hole and other a plurality of through holes that connect with conductor layer 631,632.
On the 4th layer shown in Figure 31 B is above the dielectric layer 424, form capacitor conductor layer 641,642 and conductor layer 643.Conductor layer 631,641 and be configured in dielectric layer 423 between them and constitute capacitor C11 among Figure 27.Conductor layer 632,642 and be configured in dielectric layer 423 between them and constitute capacitor C12 among Figure 27.Conductor layer 632 is connected with conductor layer 643 via 2 through holes that form on the dielectric layer 423.In addition, on dielectric layer 424, form respectively and conductor layer 641,642,643 through hole and other a plurality of through holes that connect.
On the 5th layer shown in Figure 32 A is above the dielectric layer 425, form inductor conductor layer 651,652 and conductor layer 653,654.Conductor layer 642 is connected with conductor layer 651 via the through hole that forms on the dielectric layer 424.Conductor layer 641 is connected with conductor layer 652 via the through hole that forms on the dielectric layer 424.Conductor layer 643 is connected with conductor layer 653 via 2 through holes that form on the dielectric layer 424.Conductor layer 631 is connected with conductor layer 654 via the through hole that forms on the dielectric layer 423,424.In addition, on dielectric layer 425, form respectively and conductor layer 651,652,653,654 through hole and other a plurality of through holes that connect.
On the 6th layer shown in Figure 32 B is above the dielectric layer 426, form inductor conductor layer 661,662 and conductor layer 663.Conductor layer 651 is connected with conductor layer 661 via the through hole that forms on the dielectric layer 425.Conductor layer 652 is connected with conductor layer 662 via the through hole that forms on the dielectric layer 425.Conductor layer 653 is connected with conductor layer 663 via 2 through holes that form on the dielectric layer 425.In addition, on dielectric layer 426, form respectively and conductor layer 661,662,663 through hole and other a plurality of through holes that connect.
On on the dielectric layer 427 of the 7th layer shown in Figure 33 A, form inductor conductor layer 671,672 and conductor layer 673.Conductor layer 661 is connected with conductor layer 671 via the through hole that forms on the dielectric layer 426, and conductor layer 662 is connected with conductor layer 672 via the through hole that forms on the dielectric layer 426.Conductor layer 663 is connected with conductor layer 673 via 2 through holes that form on the dielectric layer 426.In addition, on dielectric layer 427, form respectively and conductor layer 671,672,673 through hole and other a plurality of through holes that connect.
On the 8th layer shown in Figure 33 B is above the dielectric layer 428, form inductor conductor layer 681,682 and conductor layer 683.Conductor layer 671 is connected with conductor layer 681 via the through hole that forms on the dielectric layer 427.In addition, conductor layer 631 is connected with conductor layer 681 via the through hole and the conductor layer 654 that form on the dielectric layer 423～427.Conductor layer 672 is connected with conductor layer 682 via the through hole that forms on the dielectric layer 427.Conductor layer 673 is connected with conductor layer 683 via 2 through holes that form on the dielectric layer 427.In addition, on dielectric layer 428, form respectively through hole and other a plurality of through holes that connect with conductor layer 682,683.
Inductor L11 shown in Figure 27 is by conductor layer 651,661, and 671,681 via through holes are connected in series them and constitute.Inductor L12 shown in Figure 27 is by conductor layer 652,662, and 672,682 via through holes are connected in series them and constitute.
On the 9th layer shown in Figure 34 A is above the dielectric layer 429, form conductor layer for grounding 691 and conductor layer 692,693.Conductor layer 682,683 is connected with conductor layer 691 via the through hole that forms on the dielectric layer 428 respectively.In addition, conductor layer 632 is connected with conductor layer 691 via the through hole that forms on the dielectric layer 423～428.Conductor layer 642 is connected with conductor layer 692 via the through hole that forms on the dielectric layer 424～428.Conductor layer 652 is connected with conductor layer 693 via the through hole that forms on the dielectric layer 425～428.In addition, on dielectric layer 429, form a plurality of through holes and other a plurality of through holes that connect with conductor layer 691,692,693.
Shown in Figure 34 B, be that the bottom surface 420b of multilayer board 420 forms below dielectric layer 429: constitute input terminal 410a, the conductor layer 710a of 410b, 710b; Constitute lead-out terminal 410c1, the conductor layer 710c1 of 410c2,710c2; Constitute control terminal 411d, the conductor layer 711d of 411e, 711e; And the conductor layer G21～G31 that constitutes earth terminal.
Above-mentioned the 1st layer to the 9th layer dielectric layer 421～429 and conductor layer are stacked and form multilayer board shown in Figure 28 420.On multilayer board 420, carry switch 411 and capacitor C13 on the 420a.A plurality of conductor layers that balance converter 412 usefulness are located in the multilayer board 420 constitute.Have again, in the present embodiment, can adopt as the material of dielectric layer as multilayer board 420 and use resin, pottery or the various materials such as material that both are compound.But,, especially preferably use the low temperature while sintered ceramic multilager base plate of excellent in high-frequency characteristics as multilayer board 420.
Below, by the effect of present embodiment relatively being described with comparative example.Figure 35 is the block diagram of circuit structure of the high-frequency circuit of expression comparative example.Do not establish switch 411 and balance converter 412 in the high-frequency circuit shown in Figure 25 in the high-frequency circuit of comparative example, and replace BPF413A in the high-frequency circuit shown in Figure 25,413B is provided with BPF415A, 415B, and replace the low noise amplifier 414 of high-frequency circuit shown in Figure 25 and be provided with 2 low noise amplifier 434A, 434B.The received signal GSM Rx1 of BPF415A output balanced signal form, the received signal GSM Rx2 of BPF415B output balanced signal form.Low noise amplifier 433A, 433B are differential input and output type.In the high-frequency circuit of comparative example, by the received signal GSM Rx1 of the port 410c of switch 401 output by BPF415A input low noise amplifier 434A.In addition, by the received signal GSM Rx2 of the port 410d of switch 401 output by BPF415B input low noise amplifier 434B.In the high-frequency circuit of comparative example, by BPF415A, 415B and low noise amplifier 434A, 434B constitutes receiving circuit.Other structure of the high-frequency circuit of comparative example is identical with high-frequency circuit shown in Figure 25.
In comparative example shown in Figure 35, need two low noise amplifiers that price is higher, consequently, can hinder receiving circuit and comprise the miniaturization and the cost degradation of the mobile phone high-frequency circuit of this circuit.And in the present embodiment, because 2 received signal GSM Rx1, shared 1 low noise amplifier 414 of GSM Rx2, so, compare with comparative example, the quantity of the low noise amplifier that contains in the receiving circuit 406 can be reduced 1, consequently, receiving circuit 406 and the mobile phone high-frequency circuit that comprises this circuit can be realized miniaturization and cost degradation.In addition, in the present embodiment, to be transformed into the received signal of balanced signal form by the received signal of the unbalanced signal form of the output port 411c of switch 411 output by balance converter 412, and export low noise amplifier 414 to, therefore can use differential input and output type low noise amplifier 414, consequently, receiving sensitivity is improved.Have again, compare, can reduce by 1 low noise amplifier in the present embodiment, but need newly-increased 1 switch 411 that switches unbalanced signal with comparative example.But, to compare with low noise amplifier, the switch price of switching unbalanced signal is lower, and therefore, the cost of present embodiment can be lower than comparative example.
Have, in comparative example shown in Figure 35, for 2 received signal GSM Rx1, the shared low noise amplifier of GSM Rx2 can consider to be provided with the switch that switches balanced signal again.In this case, with BPF415A, 415B is connected each input port of the switch that switches balanced signal, 1 low noise amplifier is connected the output port of the switch that switches balanced signal.But, in the construction of switch that uses this switching balanced signal, to compare with the switch that switches unbalanced signal, the switch price of switching balanced signal is higher, increases so cost occurs.In addition, as mentioned above, in the structure of using the switch that switches balanced signal, the wiring of balanced signal is elongated, the easy deterioration of the degree of balance of balanced signal.
And in the present embodiment, as mentioned above, compare with the structure of using the switch that switches balanced signal, need 1 balance converter, but can use the low price switch that switches unbalanced signal, rather than switch the high price switch of balanced signal.In addition, can make balance converter with low cost.Therefore,, as mentioned above, compare with the structure of the switch that use to switch balanced signal according to present embodiment, but receiving circuit 406 and comprise the mobile phone high-frequency circuit cost degradation of this circuit.In addition,, as mentioned above, compare with the structure of the switch that use to switch balanced signal according to present embodiment, because the wiring of balanced signal shortens, so, can prevent the degree of balance deterioration of balanced signal.
In addition, as present embodiment, 1 high frequency electronic component 410 that comprises switch 411 and balance converter 412 by formation, and switch 411 and balance converter 412 are constituted as another element, compare with the situation that they are encapsulated on the substrate, can reduce the area that switch 411 and balance converter 412 occupy in the receiving circuit 406.According to this point, the miniaturization that present embodiment also can make receiving circuit 406 and comprise the mobile phone high-frequency circuit of this circuit becomes possibility.
In addition, the high frequency electronic component 410 of present embodiment is provided with multilayer board 420, and a plurality of conductor layers that balance converter 412 usefulness are located in the multilayer board 420 constitute, and switch 411 carries on multilayer board 420.Shown in Figure 30 A to Figure 34 B, balance converter 412 can easily constitute with a plurality of conductor layers of being located in the multilayer board 420.Therefore, as present embodiment, constitute balance converters 412 with a plurality of conductor layers of being located in the multilayer board 420, and switch 411 is carried in multilayer board 420, thereby can reduce the occupied area of the high frequency electronic component 410 in the transtation mission circuit 406 especially.So, according to present embodiment, receiving circuit 406 and comprise the further miniaturization of mobile phone high-frequency circuit of this circuit.
Below, another structure of balance converter 412 is described with reference to Figure 36.Balance converter 412 usefulness resonators shown in Figure 36 constitute.Balance converter 412 has: 1 uneven input 521; 2 balance outputs 522,523; And 4 1/4 wave resonator 524,525,526,527.One end of 1/4 wave resonator 524 is connected with uneven input 521, and the other end of 1/4 wave resonator 524 is connected with an end of 1/4 wave resonator 525.One end of 1/4 wave resonator 526 is connected with balance output 522, and the other end of 1/4 wave resonator 526 is connected with ground.One end of 1/4 wave resonator 527 is connected with balance output 523, and the other end of 1/4 wave resonator 527 is connected with ground.1/4 wave resonator 526 and 524 couplings of 1/4 wave resonator, 1/4 wave resonator 527 and 525 couplings of 1/4 wave resonator.
Though the intervention attenuation of the balance converter 412 that lc circuit shown in Figure 27 constitutes is little, the band region that the amplitude balance characteristic is good is narrow.On the other hand, adopt the intervention attenuation of the balance converter 412 that resonator shown in Figure 36 constitutes bigger, but the good band region of amplitude balance characteristic is wide.And in the balance converter 412 that uses resonator shown in Figure 36 to constitute, between uneven input 521 and balance output 522,523 direct current be prevented from by.Therefore, if use balance converter shown in Figure 36 412, then in principle with each signal path that each port is connected on, even use need be provided with stop the capacitor that direct current passes through switch as switch 411, the capacitor that the prevention direct current passes through also can be set on the signal path between switch 411 and the balance converter 412.
The same with the balance converter 412 that is made of lc circuit shown in Figure 27, the balance converter 412 that uses resonator shown in Figure 36 to constitute can constitute with a plurality of conductor layers of being located in the multilayer board 420.
Below, with reference to Figure 37, the variation 1～3 of the high frequency electronic component of present embodiment is described.Figure 37 represents the part that contains in the high frequency electronic component of each variation in the receiving circuit 406.The high frequency electronic component 410A of variation 1 also is provided with power amplifier 414 outside switch 411 and balance converter 412.In this high frequency electronic component 410A, low noise amplifier 414 can be equipped on the top 20a of multilayer board 420.In addition, the input of low noise amplifier 414 is connected with the balance output of balance converter 412, and the output of low noise amplifier 414 is connected with the output of high frequency electronic component 410A.That is, low noise amplifier 414 is arranged between the output of the balance output of balance converter 412 and high frequency electronic component 410A.
Below, the variation 1～3 of the high frequency electronic component of present embodiment is described with reference to Figure 37.Figure 37 represents the part that comprises in the high frequency electronic component of each variation in the receiving circuit 406.The high frequency electronic component 410A of variation 1 also is provided with low noise amplifier 414 outside switch 411 and balance converter 412.In this high frequency electronic component 410A, low noise amplifier 414 also can be equipped on the top 420a of multilayer board 420.In addition, the input of low noise amplifier 414 is connected with the balance output of balance converter 412, and the output of low noise amplifier 414 is connected with the output of high frequency electronic component 410A.That is, low noise amplifier 414 is arranged between the output of the balance output of balance converter 412 and high frequency electronic component 410A.
The high frequency electronic component 410B of variation 2 also is provided with 2 BPF413A, 413B outside switch 411 and balance converter 412.In this high frequency electronic component 410B, BPF413A, 413B also can be equipped on the top 420a of multilayer board 420.In addition, the input of BPF413A is connected with the input terminal of the high frequency electronic component 410B that is transfused to received signal GSM Rx1, and the output of BPF413A is connected with the input port 411a of switch 411.That is, BPF413A is arranged on input port 411a and is transfused between the input terminal of high frequency electronic component 410B of received signal GSM Rx1.In addition, the input of BPF413B is connected with the input terminal of the high frequency electronic component 410B that is transfused to received signal GSM Rx2, and the output of BPF413B is connected with the input port 411b of switch 411.That is, BPF413B is arranged on input port 411b and is transfused between the input terminal of high frequency electronic component 410B of received signal GSM Rx2.Have, high frequency electronic component 410B can constitute and only be provided with BPF413A again, the side among the 413B.
The high frequency electronic component 410C of variation 3 also is provided with low noise amplifier 414 and BPF413A, 413B outside switch 411 and balance converter 412.In this high frequency electronic component 410C, low noise amplifier 414 and BPF413A, 413B also can be equipped on the top 420a of multilayer board 420.The input of low noise amplifier 414 is connected with the balance output of balance converter 412, and the output of low noise amplifier 414 is connected with the output of high frequency electronic component 410C.The input of BPF413A is connected with the input terminal of the high frequency electronic component 410C that is transfused to received signal GSM Rx1, and the output of BPF413A is connected with the port 411a of switch 411.In addition, the input of BPF413B is connected with the input terminal of the high frequency electronic component 410C that is transfused to received signal GSM Rx2, and the output of BPF413B is connected with the port 411b of switch 411.
Below, the high frequency electronic component of embodiments of the present invention 6 is described with reference to Figure 38.Figure 38 is the block diagram of circuit structure of one of the high-frequency circuit example of the expression high frequency electronic component 440 that comprises present embodiment.This high-frequency circuit is handled the signal of 2 GSM modes and the signal of 1 UMTS mode.
The same with execution mode 5, high-frequency circuit shown in Figure 38 is provided with antenna 501, switch 401 and IC402.In the present embodiment, IC402 generates and the transmission signal UMTS Tx of output UMTS mode and the transmission signal GSM Tx1 of 2 GSM modes, GSM Tx2.The transmission signal UMTS Tx of IC402 output is the unbalanced signal form, and 2 of IC402 output send signal GSM Tx1, and GSM Tx2 is the balanced signal form.In addition, IC402 receives the received signal UMTS Rx of UMTS mode and the received signal GSMRx1 of 2 GSM modes, GSM Rx2.The received signal UMTS Rx that IC402 receives, GSM Rx1, GSMRx2 are the balanced signal form.In addition, IC402 has terminal 402a1,402a2,402b1,402b2,402d, 402e1,402e2.Send signal GSM Tx1, GSM Tx2 is by terminal 402a1, and 402a2 exports.Received signal GSM Rx1, GSM Rx2 input terminal 402b1,402b2.Sending signal UMTS Tx is exported by terminal 402d.Received signal UMTS Rx input terminal 402e1,402e2.
In the present embodiment, if sending signal GSM Tx1 and received signal GSM Rx1 is transmission signal and the received signal of the GSM850 (AGSM) in 4 systems shown in the table 1, then send transmission signal and received signal that signal GSM Tx2 and received signal GSM Rx2 are the approaching GSM900 (EGSM) of frequency band and GSM850 (AGSM), sending signal UMTS Tx and received signal UMTS Rx is transmission signal and the received signal of the wave band V identical with GSM850 (AGSM) of 10 wave band midbands shown in the table 2.
In addition, if sending signal GSM Tx1 and received signal GSM Rx1 is transmission signal and the received signal of the GSM900 (EGSM) in 4 systems shown in the table 1, then send transmission signal and received signal that signal GSM Tx2 and received signal GSM Rx2 are the approaching GSM850 (AGSM) of frequency band and GSM900 (EGSM), sending signal UMTS Tx and received signal UMTS Rx is transmission signal and the received signal of the wave band VIII identical with GSM900 (EGSM) of 10 wave band midbands shown in the table 2.
In addition, if sending signal GSM Tx1 and received signal GSM Rx1 is transmission signal and the received signal of the GSM1800 (DCS) in 4 systems shown in the table 1, then send transmission signal and received signal that signal GSM Tx2 and received signal GSM Rx2 are the approaching GSM1900 (PCS) of frequency band and GSM1800 (DCS), sending signal UMTS Tx and received signal UMTS Rx is transmission signal and the received signal of the wave band III identical with GSM1800 (DCS) of 10 wave band midbands shown in the table 2.
In addition, if sending signal GSM Tx1 and received signal GSM Rx1 is transmission signal and the received signal of the GSM1900 (PCS) in 4 systems shown in the table 1, then send transmission signal and received signal that signal GSM Tx2 and received signal GSM Rx2 are the approaching GSM1800 (DCS) of frequency band and GSM1900 (PCS), sending signal UMTS Tx and received signal UMTS Rx is transmission signal and the received signal of the wave band II identical with GSM1900 (PCS) of 10 wave band midbands shown in the table 2.
Be not provided with the BPF413A of execution mode 5 in the high-frequency circuit of present embodiment.In addition, the high-frequency circuit of present embodiment is provided with the high frequency electronic component 440 of present embodiment, replaces the high frequency electronic component 410 of execution mode 5.In addition, the high-frequency circuit of present embodiment also is provided with BPF407, power amplifier 408, antenna multicoupler 409, low noise amplifier 442 and BPF443 outside the component parts of the high-frequency circuit of execution mode 5.
High frequency electronic component 440 is provided with: input terminal 440a, 440b; Lead-out terminal 440c1,440c2,440d; Switch 441; Switch 411; And balance converter 412.Switch 441 has 1 input port 441a and 2 output port 441b, 441c, with input port 441a selectively with output port 441b, the arbitrary port among the 441c connects.Switch 411 has 2 input port 411a, 411b and 1 output port 411c, with output port 411c selectively with input port 411a, the arbitrary port among the 411b connects.Balance converter 412 has 1 uneven input and 2 balance outputs.In switch 411,441, switch 411 is corresponding to switch of the present invention.
The input port 441a of switch 441 is connected with the input terminal 440a of high frequency electronic component 440.The output port 441b of switch 441 is connected with the lead-out terminal 440d of high frequency electronic component 440.The output port 441c of switch 441 is connected with the input port 411a of switch 411.The input port 411b of switch 411 is connected with the input terminal 440b of high frequency electronic component 440.The output port 411c of switch 411 is connected with the uneven input of balance converter 412.2 the balance outputs of balance converter 412 and the lead-out terminal 440c1 of high frequency electronic component 440,440c2 connects.
BPF407 has 1 uneven input and 1 uneven output.The uneven input of BPF407 is connected with the terminal 402d of IC402.The uneven output of BPF407 is connected with the input of power amplifier 408.
BPF413B has 1 uneven input and 1 uneven output.The uneven input of BPF413B is connected with the port 401c of switch 401.The uneven output of BPF413B is connected with the input terminal 440b of high frequency electronic component 440.
In the high-frequency circuit of present embodiment, the BPF409b of antenna multicoupler 409, high frequency electronic component 440, BPF413B, 443 and low noise amplifier 414,442 constitute receiving circuits.
Below, the effect of the high-frequency circuit of the high frequency electronic component 440 that comprises present embodiment is described.IC402 generates and exports the transmission signal GSM Tx1 that is the balanced signal form, the transmission signal UMTS Tx of GSMTx2 and unbalanced signal form.
Sending signal GSM Tx1 or sending signal GSM Tx2 when being sent out, the port 401a of switch 401 is connected with port 401d.At this state, by the transmission signal GSM Tx1 of the balanced signal form of IC402 output or send signal GSM Tx2 and be transformed into the transmission signal GSM Tx1 of unbalanced signal form or send signal GSM Tx2 by balance converter 403, present to antenna 501 via power amplifier 404, LPF405 and switch 401 successively then, send by antenna 501.
When transmission signal UMTS Tx was sent out, the port 401a of switch 401 was connected with port 401b.At this state, the transmission signal UMTS Tx that is exported by IC402 presents to antenna 501 via the BPF409a and the switch 401 of BPF407, power amplifier 408, antenna multicoupler 409 successively, is sent by antenna 501.
When received signal GSM Rx1 was received, the port 401a of switch 401 was connected with port 401b, and the input port 441a of switch 441 is connected with output port 441c, and the output port 411c of switch 411 is connected with input port 411a.At this state, the received signal GSM Rx1 of the unbalanced signal form that is received by antenna 501 is successively via switch 401, the BPF409b of antenna multicoupler 409, switch 441 and switch 411 input balance converters 412.Balance converter 412 will be transformed into the received signal GSM Rx1 of balanced signal form by the received signal GSM Rx1 of the unbalanced signal form of switch 411 output, and export differential input and output type low noise amplifier 414 to.Be transfused to received signal GSM Rx1 input IC402 after low noise amplifier 414 amplifies of low noise amplifier 414.
When received signal GSM Rx2 was received, the port 401a of switch 401 was connected with port 401c, and the output port 411c of switch 411 is connected with input port 441b.At this state, the received signal GSM Rx2 of the unbalanced signal form that is received by antenna 501 is successively via switch 401, and BPF413B and switch 411 are transfused to balance converter 412.Balance converter 412 will be transformed into the received signal GSM Rx2 of balanced signal form by the received signal GSM Rx2 of the unbalanced signal form of switch 411 output, and export differential input and output type low noise amplifier 414 to.The received signal GSM Rx2 that is transfused to low noise amplifier 414 amplifies through low noise amplifier 414, and input IC402.
When received signal GSM Rx was received, the port 401a of switch 401 was connected with port 401b, and the input port 441a of switch 441 is connected with output port 441b.At this state, the received signal UMTS Rx of the unbalanced signal form that is received by antenna 501 is successively via the BPF409b of switch 401, antenna multicoupler 409 and switch 441 and input low noise amplifier 442.The received signal UMTS Rx that is transfused to low noise amplifier 442 amplifies through low noise amplifier 442, and by the received signal UMTS Rx that BPF443 is transformed into the balanced signal form, imports IC402.
Below, by the effect of present embodiment relatively being described with comparative example.Figure 39 is the block diagram of circuit structure of the high-frequency circuit of expression comparative example.Be not provided with switch 441, switch 411 and balance converter 412 in the high-frequency circuit shown in Figure 38 in the high-frequency circuit of this comparative example, replace switch 401 in the high-frequency circuit shown in Figure 38 and be provided with switch 451, be provided with 2 BPF415A, 415B replaces the BPF413B in the high-frequency circuit shown in Figure 38, and being provided with 2 low noise amplifier 434A, 434B replaces the low noise amplifier 414 in the high-frequency circuit shown in Figure 38.
The 3rd port of antenna multicoupler 409 is connected with the input of low noise amplifier 442.The output of BPF415A is connected with the input of low noise amplifier 434A.The output of BPF415B is connected with the input of low noise amplifier 434B.BPF415A, 415B all export the received signal of balanced signal form. Low noise amplifier 434A, 434B are differential input and output type.
In the high-frequency circuit of comparative example, sending signal GSM Tx1 or sending signal GSMTx2 when being sent out, the port 451a of switch 451 is connected with port 451e.At this state, by the transmission signal GSM Tx1 of the balanced signal form of IC402 output or send signal GSMTx2 and be transformed into the transmission signal GSM Tx1 of unbalanced signal form or send signal GSM Tx2 by balance converter 403, present to antenna 501 via power amplifier 404, LPF405 and switch 451 successively then, send by antenna 501.When transmission signal UMTS Tx was sent out, the port 451a of switch 451 was connected with port 451b.At this state, the transmission signal UMTS Tx that is exported by IC402 presents to antenna 501 via the BPF409a and the switch 451 of BPF407, power amplifier 408, antenna multicoupler 409 successively, is sent by antenna 501.
In addition, when received signal GSM Rx1 was received, the port 451a of switch 451 was connected with port 451c.At this state, the received signal GSM Rx1 of the unbalanced signal form that is received by antenna 501 amplifies the back through low noise amplifier 434A and imports IC402 by switch 451 and the received signal GSM Rx1 that is transformed into the balanced signal form by BPF415A.
In addition, when received signal GSM Rx2 was received, the port 451a of switch 451 was connected with port 451d.At this state, the received signal GSM Rx2 of the unbalanced signal form that is received by antenna 501 amplifies the back through low noise amplifier 434B again and imports IC402 by switch 451 and the received signal GSM Rx2 that is transformed into the balanced signal form by BPF415B.
In addition, when received signal UMTS Rx was received, the port 451a of switch 451 was connected with port 451b.At this state, the received signal UMTS Rx of the unbalanced signal form that is received by antenna 501 is successively via the BPF409b and the low noise amplifier 442 of switch 451 and antenna multicoupler 409, imports IC402 after being transformed into the received signal UMTS Rx of balanced signal form by BPF443 again.
In the high-frequency circuit of comparative example, the BPF409b of antenna multicoupler 409, BPF415A, 415B, 443 and low noise amplifier 434A, 434B, 442 constitute receiving circuits.Other structure of the high-frequency circuit of comparative example is identical with high-frequency circuit shown in Figure 38.
Comparative example shown in Figure 39 needs 3 low noise amplifiers that price is higher, and consequently, receiving circuit and the miniaturization and the cost degradation that comprise the mobile phone high-frequency circuit of this circuit are hindered.And in the present embodiment, because 2 received signal GSM Rx1, shared 1 low noise amplifier 414 of GSMRx2, compare with comparative example, can make the quantity of the low noise amplifier that contains in the receiving circuit reduce 1, consequently, receiving circuit and the mobile phone high-frequency circuit that comprises this circuit can be realized miniaturization and cost degradation.In addition, in the present embodiment, by balance converter 412, the received signal of the unbalanced signal form that will be exported by the output port 411c of switch 411 is transformed into the received signal of balanced signal form, and export low noise amplifier 414 to, therefore can use differential input and output type low noise amplifier 414, consequently, receiving sensitivity is improved.In addition, compare, can reduce by 1 low noise amplifier in the present embodiment, but need the newly-increased switch 441,411 that switches unbalanced signal with comparative example.But, to compare with low noise amplifier, the switch that switches unbalanced signal is at a low price, therefore compares with comparative example, can reduce cost in the present embodiment.
In addition, in the present embodiment, 2 received signal UMTS Rx, shared 1 BPF409b of GSM Rx1.Therefore, compare with comparative example shown in Figure 39, present embodiment can reduce by 1 BPF, based on this miniaturization and cost degradation that also can make receiving circuit and comprise the mobile phone high-frequency circuit of this circuit.
Yet, in comparative example shown in Figure 39, through the received signal UMTSRx of low noise amplifier 442 amplifications by the unbalanced signal form of the BPF409b output of antenna multicoupler 409.For this structure, on the signal path of the received signal UMTS Rx between low noise amplifier 442 and the IC402, need BPF443.It is the reasons are as follows: send signal and received signal and cut apart by the time in the TDMA mode, and send signal and received signal is not cut apart by the time in the UMTS mode.Therefore, in the UMT mode, between transmission signal and received signal, need very high isolation.In order to realize high isolation, on the signal path of the received signal UMTS Rx between low noise amplifier 442 and the IC402, need to be provided with BPF443.
As mentioned above, if amplify the structure of the received signal UMTS Rx of unbalanced signal forms through low noise amplifier 442, the received signal GSM Rx1 of GSM mode then, preferably not shared low noise amplifier between the received signal UMTS Rx of GSM Rx2 and UMTS mode.This be because: if shared like this low noise amplifier, then in order to realize high isolation between transmission signal in the UMTS mode and the received signal, need on shared low noise amplifier and the signal path between the IC402, BPF be set, BPF, the received signal GSMRx1 of GSM mode, the loss meeting of GSM Rx2 increases.Therefore, if amplify the structure of the received signal UMTS Rx of unbalanced signal forms through low noise amplifier 442, then preferably as shown in figure 38, not at the received signal GSM of GSM mode Rx1, shared low noise amplifier between the received signal UMTS Rx of GSM Rx2 and UMTS mode, and employing is by 2 received signal GSM Rx1 of GSM mode, the structure of the shared low noise amplifier 414 of GSM Rx2.
Have, the same with the variation 1～3 of execution mode 5, the high frequency electronic component of present embodiment also can be provided with at least 1 among low noise amplifier 414 and the BPF413B outside switch 441,411 and balance converter 412 again.In addition, the high frequency electronic component of present embodiment can be provided with low noise amplifier 442, also can be provided with low noise amplifier 442 and BPF443.
Below, the variation of the high frequency electronic component 440 of present embodiment is described with reference to Figure 40.Figure 40 represents the part that high-frequency circuit medium-high frequency electronic unit 440 comprises.The high frequency electronic component 440 of variation is provided with dpdt double-pole double-throw (DPDT) type switch 445, replaces 2 switches 411,441 among Figure 38.Switch 445 has 2 input port 445a, 445b and 2 output port 445c, 445d, with input port 445a selectively with output port 445c, arbitrary port among the 445d connects, and with input port 445b selectively with output port 445c, the arbitrary port among the 445d connects.
The input port 445a of switch 445 is connected with the input terminal 440a of high frequency electronic component 440.The input port 445b of switch 445 is connected with the input terminal 440b of high frequency electronic component 440.The output port 445c of switch 445 is connected with the lead-out terminal 440d of high frequency electronic component 440.The output port 445d of switch 445 is connected with the uneven output of balance converter 412.2 the balance outputs of balance converter 412 and the lead-out terminal 440c1 of high frequency electronic component 440,440c2 connects.
When received signal UMTS Rx was received, the input port 445a of switch 445 was connected with output port 445c.When received signal GSM Rx1 was received, the input port 445a of switch 445 was connected with output port 445d.When received signal GSM Rx2 was received, the input port 445b of switch 445 was connected with output port 445d.
In high frequency electronic component shown in Figure 38 440, received signal GSM Rx1 is via 2 switches 411,441, and received signal GSM Rx1 passes through 1 switch 445 in the high frequency electronic component 440 of variation shown in Figure 40.Therefore, compare with high frequency electronic component 440 shown in Figure 38, the high frequency electronic component 440 of variation shown in Figure 40 can reduce the loss of received signal GSM Rx1.
Other structure, effect and the effect of present embodiment are identical with execution mode 5.
Below, the high frequency electronic component of embodiments of the present invention 7 is described with reference to Figure 41.Figure 41 is the block diagram of circuit structure of one of the high-frequency circuit example of the expression high frequency electronic component 410 that comprises present embodiment.The same with execution mode 6, this high-frequency circuit is handled the signal of 2 GSM modes and the signal of 1 UMTS mode.
The same with execution mode 5 and execution mode 6, high-frequency circuit shown in Figure 41 is provided with antenna 501, switch 401 and IC402.In the present embodiment, IC402 generates and the transmission signal UMTS Tx of output UMTS mode and the transmission signal GSM Tx1 of 2 GSM modes, GSM Tx2.The transmission signal UMTS Tx of IC402 output is the unbalanced signal form, and 2 of IC402 output send signal GSM Tx1, and GSM Tx2 is the balanced signal form.In addition, IC402 receives the received signal UMTS Rx of UMTS mode and the received signal GSM Rx1 of 2 GSM modes, GSM Rx2.The received signal UMTS Rx that IC402 receives, GSMRx1, GSM Rx2 is the balanced signal form.In addition, IC402 has terminal 402a1,402a2,402b1,402b2,402d.Sending signal UMTS Tx is exported by terminal 402d.Send signal GSM Tx1, GSM Tx2 is by terminal 402a1, and 402a2 exports.Received signal UMTS Rx, GSM Rx1, GSM Rx2 is transfused to terminal 402b1,402b2.Transmission signal UMTS Tx in the present embodiment, GSM Tx1, GSM Tx2 and received signal UMTSRx, GSM Rx1, the system of GSM Rx2 and band combination are all identical with execution mode 6.
The high-frequency circuit of present embodiment is provided with the high frequency electronic component 410 of present embodiment, replaces the high frequency electronic component 440 of execution mode 6.In addition, the high-frequency circuit of present embodiment is not provided with low noise amplifier 442 and the BPF443 among Figure 38.Other structure of the high-frequency circuit of present embodiment is identical with the high-frequency circuit of execution mode 6 shown in Figure 38.
High frequency electronic component 410 is provided with input terminal 410a, 410b; Lead-out terminal 410c1,410c2; Switch 411; And balance converter 412.Switch 411 has 2 input port 411a, 411b and 1 output port 411c, with output port 411c selectively with input port 411a, the arbitrary port among the 411b connects.Balance converter 412 has 1 uneven input and 2 balance outputs.
The 3rd port of antenna multicoupler 409 is connected with the input terminal 41a of high frequency electronic component 410.In addition, the uneven output of BPF413B is connected with the input terminal 410b of high frequency electronic component 410.
The input port 411a of switch 411 is connected with the input terminal 410a of high frequency electronic component 410.The input port 411b of switch 411 is connected with the input terminal 410b of high frequency electronic component 410.The output port 411c of switch 411 is connected with the uneven input of balance converter 412.2 the balance outputs of balance converter 412 and the lead-out terminal 410c1 of high frequency electronic component 410,410c2 connects.
In the high-frequency circuit of present embodiment, the BPF409b of antenna multicoupler 409, high frequency electronic component 410, BPF413B and low noise amplifier 414 constitute receiving circuit.
Below, the effect of the high-frequency circuit of the high frequency electronic component 410 that comprises present embodiment is described.IC402 generates and exports the transmission signal GSM Tx1 that is the balanced signal form, the transmission signal UMTS Tx of GSMTx2 and unbalanced signal form.
Sending signal GSM Tx1 or sending signal GSM Tx2 when being sent out, the port 401a of switch 401 is connected with port 401d.At this state, by the transmission signal GSM Tx1 of the balanced signal form of IC402 output or send signal GSM Tx2 and be transformed into the transmission signal GSM Tx1 of unbalanced signal form or send signal GSM Tx2 by balance converter 403, present to antenna 501 via power amplifier 404, LPF405 and switch 401 successively then, send by antenna 501.
When transmission signal UMTS Tx was sent out, the port 401a of switch 401 was connected with port 401b.At this state, the transmission signal UMTS Tx that is exported by IC402 presents to antenna 501 via the BPF409a and the switch 401 of BPF407, power amplifier 408, antenna multicoupler 409 successively, is sent by antenna 501.
When received signal GSM Rx1 was received, the port 401a of switch 401 was connected with port 401b, and the output port 411c of switch 411 is connected with input port 411a.At this state, the received signal GSM Rx1 of the unbalanced signal form that is received by antenna 501 is successively via the BPF409b of switch 401, antenna multicoupler 409 and switch 411 and input balance converter 412.Balance converter 412 will be transformed into the received signal GSM Rx1 of balanced signal form by the received signal GSMRx1 of the unbalanced signal form of switch 411 output, export differential input and output type low noise amplifier 414 to.Be transfused to the received signal GSM Rx1 of low noise amplifier 414, input IC402 after low noise amplifier 414 amplifies.
When received signal GSM Rx2 was received, the port 401a of switch 401 was connected with port 401c, and the output port 411c of switch 411 is connected with input port 441b.At this state, the received signal GSM Rx2 of the unbalanced signal form that is received by antenna 501 is the input balance converter 412 via switch 401, BPF413B and switch 411 successively.Balance converter 412 will be transformed into the received signal GSM Rx2 of balanced signal form by the received signal GSM Rx2 of the unbalanced signal form of switch 411 output, export differential input and output type low noise amplifier 414 to.Be transfused to the received signal GSM Rx2 of low noise amplifier 414, input IC402 after low noise amplifier 414 amplifies.
When received signal UMTS Rx was received, the port 401a of switch 401 was connected with port 401b, and the output port 411c of switch 411 is connected with input port 411a.At this state, the received signal UMTS Rx of the unbalanced signal form that is received by antenna 501 is successively via the BPF409b of switch 401, antenna multicoupler 409 and switch 411 and input balance converter 412.Balance converter 412 will be transformed into the received signal UMTS Rx of balanced signal form by the received signal UMTS Rx of the unbalanced signal form of switch 411 output, and export differential input and output type low noise amplifier 414 to.Be transfused to the received signal UMTS Rx of low noise amplifier 414, input IC402 after low noise amplifier 414 amplifies.Be transfused to the input port 411a of switch 411, a plurality of received signals of 411b are corresponding to a plurality of high-frequency signals of the unbalanced signal form among the present invention.
Below, by the effect of present embodiment relatively being described with comparative example.Figure 42 is the block diagram of circuit structure of the high-frequency circuit of expression comparative example.Do not establish switch 411 and balance converter 412 in the high-frequency circuit shown in Figure 41 in the high-frequency circuit of this comparative example, replace switch 401 in the high-frequency circuit shown in Figure 41 and be provided with switch 451, be provided with antenna multicoupler 419 and replace antenna multicoupler 409 in the high-frequency circuit shown in Figure 41, be provided with 2 BPF415A, 415B replaces the BPF413B in the high-frequency circuit shown in Figure 41, be provided with 3 low noise amplifier 434A, 434B, 454 replace the low noise amplifier 414 in the high-frequency circuit shown in Figure 41.
In antenna multicoupler 419, BPF419a is arranged between the 1st port and the 2nd port, and BPF419b is arranged between the 1st port and the 3rd port.The 2nd port of antenna multicoupler 419 is connected with the output of power amplifier 408.The received signal of the 3rd port output balanced signal form of antenna multicoupler 419.The 3rd port of antenna multicoupler 419 is connected with the input of low noise amplifier 454.Low noise amplifier 454 is differential input and output types.
The output of BPF415A is connected with the input of low noise amplifier 434A.The output of BPF415B is connected with the input of low noise amplifier 434B.BPF415A, 415B all export the received signal of balanced signal form. Low noise amplifier 434A, 434B are differential input and output type.
In the high-frequency circuit of comparative example, sending signal GSM Tx1 or sending signal GSMTx2 when being sent out, the port 451a of switch 451 is connected with port 451e.At this state, by the transmission signal GSM Tx1 of the balanced signal form of IC402 output or send signal GSMTx2, be transformed into the transmission signal GSMTx1 of unbalanced signal form or send signal GSM Tx2 by balance converter 403, present to antenna 501 via power amplifier 404, LPF405 and switch 451 successively then, send by antenna 501.When transmission signal UMTS Tx was sent out, the port 451a of switch 451 was connected with port 451b.At this state, successively via BPF407, the BPF419a of power amplifier 408, antenna multicoupler 419 and switch 451 are presented to antenna 501, are sent by antenna 501 by the transmission signal UMTS Tx of IC402 output.
In addition, when received signal GSM Rx1 was received, the port 451a of switch 451 was connected with port 451c.At this state, the received signal GSM Rx1 of the unbalanced signal form that is received by antenna 501 by switch 451 and the received signal GSM Rx1 that is transformed into the balanced signal form by BPF415A, amplifies the back through low noise amplifier 434A and imports IC402.
In addition, when received signal GSM Rx2 was received, the port 451a of switch 451 was connected with port 451d.At this state, the received signal GSM Rx2 of the unbalanced signal form that is received by antenna 501 by switch 451 and the received signal GSM Rx2 that is transformed into the balanced signal form by BPF415B, amplifies the back through low noise amplifier 434B and imports IC402.
In addition, when received signal UMTS Rx was received, the port 451a of switch 451 was connected with port 451b.At this state, the received signal UMTS Rx of the unbalanced signal form that receives by antenna 501, be transformed into the received signal UMTS Rx of balanced signal form by switch 451 and by the BPF409b of antenna multicoupler 419, amplify the back through low noise amplifier 454 and import IC402.
In the high-frequency circuit of comparative example, the BPF419b of antenna multicoupler 419, BPF415A, 415B and low noise amplifier 434A, 434B, 454 constitute receiving circuit.Other structure of the high-frequency circuit of comparative example is identical with high-frequency circuit shown in Figure 38.
Comparative example shown in Figure 42 needs 3 low noise amplifiers that price is higher, and consequently, receiving circuit and the miniaturization and the cost degradation that comprise the mobile phone high-frequency circuit of this circuit are hindered.And in the present embodiment, 3 received signal UMTS Rx, GSM Rx1, shared 1 low noise amplifier 414 of GSM Rx2, therefore compare with comparative example, can make the quantity of the low noise amplifier that comprises in the receiving circuit reduce 2, consequently, receiving circuit and the mobile phone high-frequency circuit that comprises this circuit can be realized miniaturization and cost degradation.In addition, in the present embodiment, to be transformed into the received signal of balanced signal form by the received signal of the unbalanced signal form of the output port 411c of switch 411 output by balance converter 412, export low noise amplifier 414 to, therefore can use differential input and output type low noise amplifier 414, consequently, receiving sensitivity is improved.Have, compare with comparative example, present embodiment can reduce by 2 low noise amplifiers, but need increase switch 441 newly.But it is lower that switch and low noise amplifier are compared price, therefore compares with comparative example, and present embodiment can reduce cost.
Yet, in comparative example shown in Figure 42, through the received signal UMTS Rx of low noise amplifier 454 amplifications by the balanced signal form of the BPF419b output of antenna multicoupler 419.This structure can reduce the common-mode noise among the received signal UMTS Rx, improves the receiving sensitivity of received signal UMTS Rx, therefore, need on the signal path of the received signal UMTS Rx between low noise amplifier 454 and the IC402 BPF be set.
As mentioned above, if amplify the structure of the received signal UMTS Rx of balanced signal form by low noise amplifier (for example 454), then as present embodiment, even the received signal GSM Rx1 of GSM mode, the shared low noise amplifier 414 of the received signal UMTS Rx of GSM Rx2 and UMTS mode, also needn't on the signal path of the received signal between low noise amplifier 414 and the IC402, BPF be set, the received signal GSM Rx1 of the GSM mode that causes because of BPF can not take place, and the loss of GSM Rx2 increases.
Have, the same with the variation 1～3 of execution mode 5, the high frequency electronic component of present embodiment also can be provided with at least one side among low noise amplifier 414 and the BPF413B outside switch 411 and balance converter 412 again.Other structure, effect and the effect of present embodiment are identical with execution mode 6.
Below, the high frequency electronic component of embodiments of the present invention 8 is described with reference to Figure 43.Figure 43 is the block diagram of circuit structure of one of the high-frequency circuit example of the expression high frequency electronic component 446 that comprises present embodiment.The same with the 6th and the 7th execution mode, this high-frequency circuit is handled the signal of 2 GSM modes and the signal of 1 UMTS mode.
High-frequency circuit shown in Figure 43 is provided with antenna 501, switch 451 and IC402.Switch 451 has 5 port 451a, 451b, 451c, 451d, 451e, with port 451a selectively with port 451b, 451c, 451d, the arbitrary port among the 451e connects.Port 451a is connected with antenna 501.
The same with execution mode 7, in the present embodiment, IC402 generates and the transmission signal UMTS Tx of output UMTS mode and the transmission signal GSM Tx1 of 2 GSM modes, GSM Tx2.The transmission signal UMTS Tx of IC402 output is the unbalanced signal form, and 2 of IC402 output send signal GSM Tx1, and GSM Tx2 is the balanced signal form.In addition, the same with execution mode 7, IC402 receives the received signal UMTS Rx of UMTS mode and the received signal GSM Rx1 of 2 GSM modes, GSM Rx2.The received signal UMTS Rx that IC402 receives, GSM Rx1, GSM Rx2 is the balanced signal form.
In the present embodiment, if send transmission signal and received signal that signal GSM Tx1 and received signal GSM Rx1 are one of the approaching GSM850 (AGSM) of 4 system's midbands shown in the table 1 and GSM900 (EGSM) sides, then sending signal GSM Tx2 and received signal GSM Rx2 is transmission signal and the received signal of the opposing party among GSM850 (AGSM) and the GSM900 (EGSM).In addition, in this case, send signal UMTS Tx and received signal UMTS Rx and be 10 wave band midbands shown in the table 2 and GSM850 (AGSM) and the approaching wave band V of GSM900 (EGSM), VI, the transmission signal and the received signal of any one wave band among the VIII.
In addition, if send transmission signal and received signal that signal GSM Tx1 and received signal GSM Rx1 are one of the approaching SM1800 (DCS) of 4 system's midbands shown in the table 1 and GSM1900 (PCS) sides, then sending signal GSM Tx2 and received signal GSM Rx2 is transmission signal and the received signal of the opposing party among GSM1800 (DCS) and the GSM1900 (PCS).In addition, in this case, send signal UMTS Tx and received signal UMTS Rx and be 10 wave band midbands shown in the table 2 and GSM1800 (DCS) and the approaching wave band I of GSM1900 (PCS), II, III, IV, IX, the transmission signal and the received signal of any one wave band among the X.
The high-frequency circuit of present embodiment is provided with the high frequency electronic component 446 of present embodiment, replaces the high frequency electronic component 410 of execution mode 7.In addition, the high-frequency circuit of present embodiment is provided with BPF413A.Other structure of the high-frequency circuit of present embodiment is identical with the high-frequency circuit of execution mode 7 shown in Figure 41.
High frequency electronic component 446 is provided with: input terminal 446a, 446b, 446c; Lead-out terminal 446d1,446d2; Switch 447; And balance converter 412.Switch 447 has 3 input port 447a, 447b, 447c and 1 output port 447d, with output port 447d selectively with input port 447a, 447b, the arbitrary port among the 447c connects.Balance converter 412 has 1 uneven input and 2 balance outputs.
The 1st port of antenna multicoupler 409 is connected with the port 451b of switch 451.In addition, the 2nd port of antenna multicoupler 409 is connected with the output of power amplifier 408.In addition, the 3rd port of antenna multicoupler 409 is connected with the input terminal 446a of high frequency electronic component 446.
Amplify transmission signal GSM Tx1, the uneven output of the power amplifier 404 of GSM Tx2 is connected with the port 451e of switch 451 via LPF405.
BPF413A, 413B are respectively equipped with 1 uneven input and 1 uneven output.BPF413A, the input of 413B respectively with the port 451c of switch 451,451d connects.BPF413A, the output of 413B respectively with the input terminal 446b of high frequency electronic component 446,446c connects.
The input port 447a of switch 447,447b, 447c, respectively with the input terminal 446a of high frequency electronic component 446,446b, 446c connects.The output port 447d of switch 447 is connected with the uneven input of balance converter 412.2 the balance outputs of balance converter 412 and the lead-out terminal 446d1 of high frequency electronic component 446,446d2 connects.2 differential input terminals of low noise amplifier 414 and 2 lead-out terminal 446d1 of high frequency electronic component 446,446d2 connects.
In the high-frequency circuit of present embodiment, the BPF409b of antenna multicoupler 409, high frequency electronic component 446, BPF413A, 413B and low noise amplifier 414 constitute receiving circuit.
Below, the effect of the high-frequency circuit of the high frequency electronic component 446 that comprises present embodiment is described.IC402 generates and exports the transmission signal GSM Tx1 that is the balanced signal form, sends the transmission signal UMTS Tx of signal GSM Tx2 and unbalanced signal form.
Sending signal GSM Tx1 or sending signal GSM Tx2 when being sent out, the port 451a of switch 451 is connected with port 451e.At this state, by the transmission signal GSM Tx1 of the balanced signal form of IC402 output or send signal GSM Tx2, be transformed into the transmission signal GSM Tx1 of unbalanced signal form or send signal GSM Tx2 by balance converter 403, present to antenna 501 via power amplifier 404, LPF405 and switch 451 successively then, send by antenna 501.
When transmission signal UMTS Tx was sent out, the port 451a of switch 451 was connected with port 451b.At this state, the transmission signal UMTS Tx that is exported by IC402 presents to antenna 501 via the BPF409a and the switch 451 of BPF407, power amplifier 408, antenna multicoupler 409 successively, is sent by antenna 501.
When received signal GSM Rx1 was received, the port 451a of switch 451 was connected with port 451c, and the output port 447d of switch 447 is connected with input port 447b.At this state, the received signal GSM Rx1 that is received by antenna 501 is successively via switch 451, BPF413A and switch 447 and input balance converter 412.Balance converter 412 will be transformed into the received signal GSM Rx1 of balanced signal form by the received signal GSM Rx1 of the unbalanced signal form of switch 447 output, export differential input and output type low noise amplifier 414 to.Be transfused to received signal GSM Rx1 input IC402 after low noise amplifier 414 amplifies of low noise amplifier 414.
When received signal GSM Rx2 was received, the port 451a of switch 451 was connected with port 451d, and the output port 447d of switch 447 is connected with input port 447c.At this state, the received signal GSM Rx2 that is received by antenna 501 imports balance converter 412 successively via switch 451, BPF413B and switch 447.Balance converter 412 will be transformed into the received signal GSM Rx2 of balanced signal form by the received signal GSM Rx2 of the unbalanced signal form of switch 447 output, export differential input and output type low noise amplifier 414 to.Be transfused to the received signal GSM Rx2 of low noise amplifier 414, input IC402 after low noise amplifier 414 amplifies.
When received signal UMTS Rx was received, the port 451a of switch 451 was connected with port 451b, and the output port 447d of switch 447 is connected with input port 447a.At this state, the received signal UMTS Rx of the unbalanced signal form that is received by antenna 501 is successively via the BPF409b of switch 451, antenna multicoupler 409 and switch 447 and input balance converter 412.Balance converter 412 will be transformed into the received signal UMTS Rx of balanced signal form by the received signal UMTS Rx of the unbalanced signal form of switch 447 output, and export differential input and output type low noise amplifier 414 to.Be transfused to received signal UMTS Rx input IC402 after low noise amplifier 414 amplifies of low noise amplifier 414.Be transfused to the input port 447a of switch 447,447b, a plurality of received signals of 447c are corresponding to a plurality of high-frequency signals of unbalanced signal form of the present invention.
In the present embodiment, 3 received signal UMTS Rx, GSM Rx1, shared 1 low noise amplifier 414 of GSM Rx2, therefore the quantity of the low noise amplifier that comprises in the receiving circuit can be made as 1, consequently, receiving circuit and the mobile phone high-frequency circuit that comprises this circuit can be realized miniaturization and cost degradation.In addition, to be transformed into the received signal of balanced signal form by the received signal of the unbalanced signal form of the output port 447d of switch 447 output by balance converter 412 in the present embodiment, and export low noise amplifier 414 to, so, can use differential input and output type low noise amplifier 414, consequently, receiving sensitivity is improved.
Have, the same with the variation 1～3 of execution mode 5, the high frequency electronic component of present embodiment also can be provided with at least 1 among low noise amplifier 414, BPF413A and the BPF413B outside switch 411 and balance converter 412 again.Other structure, effect and the effect of present embodiment are identical with execution mode 7.
Below, the high frequency electronic component of embodiments of the present invention 9 is described with reference to Figure 44.Figure 44 represents to comprise 2 high frequency electronic component 410L of present embodiment, the high-frequency circuit of 410H.This high-frequency circuit is handled the signal of 4 GSM modes and the signal of 2 UMTS modes.
High-frequency circuit shown in Figure 44 is provided with antenna 501, switch 461 and IC402.Switch 461 has 7 port 461a, 461b, 461c, 461d, 461e, 461f, 461g, with port 461a selectively with port 461b, 461c, 461d, 461e, 461f, the arbitrary port among the 461g connects.Port 461a is connected with antenna 501.
In the present embodiment, IC402 generates and exports the transmission signal UMTS-L Tx of 2 UMTS modes, the transmission signal GSM-L Tx1 of UMTS-H Tx and 4 GSM modes, GSM-L Tx2, GSM-H Tx1, GSM-H Tx2.2 of IC402 output send signal UMTS-L Tx, and UMTS-H Tx is the unbalanced signal form, and 4 of IC402 output send signal GSM-L Tx1, GSM-L Tx2, and GSM-H Tx1, GSM-H Tx2 is the balanced signal form.In addition, IC402 receives 2 received signal UMTS-LRx of UMTS mode, the received signal GSM-L Rx1 of UMTS-H Rx and 4 GSM modes, GSM-LRx2, GSM-H Rx1, GSM-H Rx2.The received signal UMTS-L Rx that IC402 receives, UMTS-H Rx, GSM-L Rx1, GSM-L Rx2, GSM-H Rx1, GSM-H Rx2 is the balanced signal form.
In the present embodiment, sending signal GSM-L Tx1 and received signal GSM-L Rx1 is approaching GSM850 (AGSM) of 4 system's midbands shown in the table 1 and the side's among the GSM900 (EGSM) transmission signal and received signal.
If sending signal GSM-L Tx1 and received signal GSM-L Rx1 is transmission signal and the received signal of GSM850 (AGSM), then send transmission signal and received signal that signal GSM-L Tx2 and received signal GSM-L Rx2 are the approaching GSM900 (EGSM) of frequency band and GSM850 (AGSM), sending signal UMTS-L Tx and received signal UMTS-L Rx is transmission signal and the received signal of the wave band V identical with GSM850 (AGSM) of 10 wave band midbands shown in the table 2.
If sending signal GSM-L Tx1 and received signal GSM-L Rx1 is transmission signal and the received signal of GSM900 (EGSM), then send transmission signal and received signal that signal GSM-L Tx2 and received signal GSM-L Rx2 are the approaching GSM850 (AGSM) of frequency band and GSM900 (EGSM), sending signal UMTS-L Tx and received signal UMTS-L Rx is transmission signal and the received signal of the wave band VIII identical with GSM900 (EGSM) of 10 wave band midbands shown in the table 2.
In addition, sending signal GSM-H Tx1 and received signal GSM-H Rx1 is approaching GSM1800 (DCS) of 4 system's midbands shown in the table 1 and the side's among the GSM1900 (PCS) transmission signal and received signal.
If sending signal GSM-H Tx1 and received signal GSM-H Rx1 is transmission signal and the received signal of GSM1800 (DCS), then send transmission signal and received signal that signal GSM-H Tx2 and received signal GSM-H Rx2 are the approaching GSM1900 (PCS) of frequency band and GSM1800 (DCS), sending signal UMTS-H Tx and received signal UMTS-HRx is transmission signal and the received signal of the wave band III identical with GSM1800 (DCS) of 10 wave band midbands shown in the table 2.
If sending signal GSM-H Tx1 and received signal GSM-H Rx1 is transmission signal and the received signal of GSM1900 (PCS), then send transmission signal and received signal that signal GSM-H Tx2 and received signal GSM-H Rx2 are the approaching GSM1800 (DCS) of frequency band and GSM1900 (PCS), sending signal UMTS-H Tx and received signal UMTS-HRx is transmission signal and the received signal of the wave band II identical with GSM1900 (PCS) of 10 wave band midbands shown in the table 2.
The high-frequency circuit of present embodiment is provided with: 2 high frequency electronic component 410L of present embodiment, 410H; 2 antenna multicoupler 409L, 409H; 4 BPF407L, 407H, 413L, 413H; 2 LPF405L, 405H; 2 balance converter 403L, 403H; 4 power amplifier 404L, 404H, 408L, 408H; And 2 low noise amplifier 414L, 414H.
High frequency electronic component 410L is provided with: input terminal 410La, 410Lb; Lead-out terminal 410Lc1,410Lc2; Switch 411L; And balance converter 412L.Switch 411L has 2 input port 411La, 411Lb and 1 output port 411Lc, with output port 411Lc selectively with input port 411La, the arbitrary port among the 411Lb connects.Balance converter 412L has 1 uneven input and 2 balance outputs.
The input port 411La of switch 411L is connected with the input terminal 410La of high frequency electronic component 410L.The input port 411Lb of switch 411L is connected with the input terminal 410Lb of high frequency electronic component 410L.The output port 411Lc of switch 411L is connected with the uneven input of balance converter 412L.2 the balance outputs of balance converter 412L and the lead-out terminal 410Lc1 of high frequency electronic component 410L, 410Lc2 connects.
High frequency electronic component 410H is provided with: input terminal 410Ha, 410Hb; Lead-out terminal 410Hc1,410Hc2; Switch 411H; And balance converter 412H.Switch 411H has 2 input port 411Ha, 411Hb and 1 output port 411Hc, with output port 411Hc selectively with input port 411Ha, the arbitrary port among the 411Hb connects.Balance converter 412H has 1 uneven input and 2 balance outputs.
The input port 411Ha of switch 411H is connected with the input terminal 410Ha of high frequency electronic component 410H.The input port 411Hb of switch 411H is connected with the input terminal 410Hb of high frequency electronic component 410H.The output port 411Hc of switch 411H is connected with the uneven input of balance converter 412H.2 the balance outputs of balance converter 412H and the lead-out terminal 410Hc1 of high frequency electronic component 410H, 410Hc2 connects.
BPF407L, 407H are equipped with 1 uneven input and 1 uneven output.By the transmission signal UMTS-L Tx of the unbalanced signal form of IC402 output, UMTS-H Tx imports BPF407L respectively, the uneven input of 407H.BPF407L, the uneven output of 407H respectively with power amplifier 408L, the input of 408H connects.
BPF413L, 413H are respectively equipped with 1 uneven input and 1 uneven output.BPF413L, the uneven input of 413H respectively with the port 461c of switch 461,461f connects.The uneven output of BPF413L is connected with the input terminal 410Lb of high frequency electronic component 410L, and the uneven output of BPF413H is connected with the input terminal 410Hb of high frequency electronic component 410H.
In the high-frequency circuit of present embodiment, receiving circuit is by BPF409Hb, the high frequency electronic component 4101L of BPF409Lb, the antenna multicoupler 409H of antenna multicoupler 409L, 410H, BPF413L, and 413H and low noise amplifier 414L, 414H constitutes.
Below, the high frequency electronic component 410L that comprises present embodiment is described, the effect of the high-frequency circuit of 410H.IC402 generates and exports the transmission signal GSM-LTx1 that is the balanced signal form, GSM-L Tx2, GSM-H Tx1, GSM-H Tx2 and the transmission signal UMTS-L Tx that is the unbalanced signal form, UMTS-H Tx.
Sending signal GSM-L Tx1 or sending signal GSM-L Tx2 when being sent out, the port 461a of switch 461 is connected with port 461d.At this state, by the transmission signal GSM-L Tx1 of the balanced signal form of IC402 output or send signal GSM-L Tx2, be transformed into the transmission signal GSM-L Tx1 of unbalanced signal form or send signal GSM-L Tx2 by balance converter 403L, present to antenna 501 via power amplifier 404L, LPF405L and switch 461 successively then, send by antenna 501.
When transmission signal UMTS-L Tx was sent out, the port 461a of switch 461 was connected with port 461b.At this state, the transmission signal UMTS-L Tx that is exported by IC402 presents to antenna 501 via BPF409La and the switch 461 of BPF407L, power amplifier 408L, antenna multicoupler 409L successively, is sent by antenna 501.
Sending signal GSM-H Tx1 or sending signal GSM-H Tx2 when being sent out, the port 461a of switch 461 is connected with port 461g.At this state, by the transmission signal GSM-H Tx1 of the balanced signal form of IC402 output or send signal GSM-H Tx2, be transformed into the transmission signal GSM-H Tx1 of unbalanced signal form or send signal GSM-H Tx2 by balance converter 403H, present to antenna 501 via power amplifier 404H, LPF405H and switch 461 successively then, send by antenna 501.
When transmission signal UMTS-H Tx was sent out, the port 461a of switch 461 was connected with port 461e.At this state, the transmission signal UMTS-H Tx that is exported by IC402 presents to antenna 501 via BPF409Ha and the switch 461 of BPF407H, power amplifier 408H, antenna multicoupler 409H successively, is sent by antenna 501.
When received signal GSM-L Rx1 was received, the port 461a of switch 461 was connected with port 461b, and the output port 411Lc of switch 411L is connected with input port 411La.At this state, the received signal GSM-L Rx1 of the unbalanced signal form that is received by antenna 501 imports balance converter 412L via the BPF409Lb of switch 461, antenna multicoupler 409L and switch 411L successively.Balance converter 412L will be transformed into the received signal GSM-L Rx1 of balanced signal form by the received signal GSM-L Rx1 of the unbalanced signal form of switch 411L output, export differential input and output type low noise amplifier 414L to.Be transfused to received signal GSM-L Rx1 input IC402 after low noise amplifier 414L amplifies of low noise amplifier 414L.
When received signal GSM-L Rx2 was received, the port 461a of switch 461 was connected with port 461c, and the output port 411Lc of switch 411L is connected with input port 411Lb.At this state, the received signal GSM-L Rx2 of the unbalanced signal form that is received by antenna 501 imports balance converter 412L via switch 461, BPF413L and switch 411L successively.Balance converter 412L will be transformed into the received signal GSM-L Rx2 of balanced signal form by the received signal GSM-L Rx2 of the unbalanced signal form of switch 411L output, export differential input and output type low noise amplifier 414 to.Be transfused to received signal GSM-L Rx2 input IC402 after low noise amplifier 414 amplifies of low noise amplifier 414.
When received signal UMTS-L Rx was received, the port 461a of switch 461 was connected with port 461b, and the output port 411Lc of switch 411L is connected with input port 411La.At this state, the received signal UMTS-L Rx of the unbalanced signal form that is received by antenna 501 imports balance converter 412L via the BPF409Lb of switch 461, antenna multicoupler 409L and switch 411L successively.Balance converter 412L will be transformed into the received signal UMTS-L Rx of balanced signal form by the received signal UMTS-L Rx of the unbalanced signal form of switch 411L output, and export differential input and output type low noise amplifier 414L to.Be transfused to received signal UMTS-L Rx input IC402 after low noise amplifier 414L amplifies of low noise amplifier 414L.Be transfused to the input port 411La of switch 411L, a plurality of received signals of 411Lb are corresponding to a plurality of high-frequency signals of unbalanced signal form of the present invention.
When received signal GSM-H Rx1 was received, the port 461a of switch 461 was connected with port 461e, and the output port 411Hc of switch 411H is connected with input port 411Ha.At this state, the received signal GSM-H Rx1 of the unbalanced signal form that is received by antenna 501 imports balance converter 412H via the BPF409Hb of switch 461, antenna multicoupler 409H and switch 411H successively.Balance converter 412H will be transformed into the received signal GSM-H Rx1 of balanced signal form by the received signal GSM-H Rx1 of the unbalanced signal form of switch 411H output, and export differential input and output type low noise amplifier 414 to.Be transfused to received signal GSM-H Rx1 input IC402 after low noise amplifier 414H amplifies of low noise amplifier 414H.
When received signal GSM-H Rx2 was received, the port 461a of switch 461 was connected with port 461f, and the output port 411Hc of switch 411H is connected with input port 411Hb.At this state, the received signal GSM-H Rx2 of the unbalanced signal form that is received by antenna 501 imports balance converter 412H via switch 461, BPF413H and switch 411H successively.Balance converter 412H will be transformed into the received signal GSM-H Rx2 of balanced signal form by the received signal GSM-H Rx2 of the unbalanced signal form of switch 411H output, and export differential input and output type low noise amplifier 414H to.Be transfused to received signal GSM-H Rx2 input IC402 after low noise amplifier 414H amplifies of low noise amplifier 414H.
When received signal UMTS-H Rx was received, the port 461a of switch 461 was connected with port 461e, and the output port 411Hc of switch 411H is connected with input port 411Ha.At this state, the received signal UMTS-H Rx of the unbalanced signal form that is received by antenna 501 imports balance converter 412H via the BPF409Hb of switch 461, antenna multicoupler 409H and switch 411H successively.Balance converter 412H will be transformed into the received signal UMTS-H Rx of balanced signal form by the received signal UMTS-H Rx of the unbalanced signal form of switch 411H output, and export differential input and output type low noise amplifier 414H to.Be transfused to received signal UMTS-H Rx input IC402 after low noise amplifier 414 amplifies of low noise amplifier 414H.Be transfused to the input port 411Ha of switch 411H, a plurality of received signals of 411Hb are corresponding to a plurality of high-frequency signals of unbalanced signal form of the present invention.
Below, by the effect of present embodiment relatively being described with comparative example.Figure 45 is the block diagram of circuit structure of the high-frequency circuit of expression comparative example.Do not establish the switch 411L in the high-frequency circuit shown in Figure 44 in the high-frequency circuit of this comparative example, 411H and balance converter 412L, 412H, replace switch 461 in the high-frequency circuit shown in Figure 44 and be provided with switch 471, be provided with antenna multicoupler 419L, 419H replaces the antenna multicoupler 409L in the high-frequency circuit shown in Figure 44,409H.In addition, the high-frequency circuit of comparative example is provided with 2 BPF415LA, 415LB replaces the BPF413L in the high-frequency circuit shown in Figure 44, is provided with 2 BPF415HA, and 415HB replaces the BPF413H in the high-frequency circuit shown in Figure 44, be provided with 3 low noise amplifier 434LA, 434LB, 454L replace the low noise amplifier 414L in the high-frequency circuit shown in Figure 44, are provided with 3 low noise amplifier 434HA, 434HB, 454H replace the low noise amplifier 414H in the high-frequency circuit shown in Figure 44.
In antenna multicoupler 419L, BPF419La is arranged between the 1st port and the 2nd port, and BPF419Lb is arranged between the 1st port and the 3rd port.The 2nd port of antenna multicoupler 419L is connected with the output of power amplifier 408L.The received signal of the 3rd port output balanced signal form of antenna multicoupler 419L.The 3rd port of antenna multicoupler 419L is connected with the input of low noise amplifier 454L.Low noise amplifier 454L is differential input and output type.
In antenna multicoupler 419H, BPF419Ha is arranged between the 1st port and the 2nd port, and BPF419Hb is arranged between the 1st port and the 3rd port.The 2nd port of antenna multicoupler 419H is connected with the output of power amplifier 408H.The received signal of the 3rd port output balanced signal form of antenna multicoupler 419H.The 3rd port of antenna multicoupler 419H is connected with the input of low noise amplifier 454H.Low noise amplifier 454H is differential input and output type.
The output of BPF415LA is connected with the input of low noise amplifier 434LA.The output of BPF415LB is connected with the input of low noise amplifier 434LB.BPF415LA, 415LB all export the received signal of balanced signal form.Low noise amplifier 434LA, 434LB are differential input and output type.
The output of BPF415HA is connected with the input of low noise amplifier 434HA.The output of BPF415HB is connected with the input of low noise amplifier 434HB.BPF415HA, 415HB all export the received signal of balanced signal form.Low noise amplifier 434HA, 434HB are differential input and output type.
In the high-frequency circuit of comparative example, send signal GSM-L Tx1 or send signal GSM-LTx2 when being sent out, the port 471a of switch 471 is connected with port 471e.At this state, by the transmission signal GSM-L Tx1 of the balanced signal form of IC402 output or send signal GSM-L Tx2, be transformed into the transmission signal GSM-L Tx1 of unbalanced signal form or send signal GSM-L Tx2 by balance converter 403L, present to antenna 501 via power amplifier 404L, LPF405L and switch 471 successively then, send by antenna 501.When transmission signal UMTS-L Tx was sent out, the port 471a of switch 471 was connected with port 471b.At this state, the transmission signal UMTS-L Tx that is exported by IC402 presents to antenna 501 via BPF419La and the switch 471 of BPF407L, power amplifier 408L, antenna multicoupler 419L successively, is sent by antenna 501.
When received signal GSM-L Rx1 was received, the port 471a of switch 471 was connected with port 471c.At this state, the received signal GSM-L Rx1 of the unbalanced signal form that is received by antenna 501 by switch 471 and the received signal GSM-L Rx1 that is transformed into the balanced signal form by BPF415LA, amplifies the back through low noise amplifier 434LA and imports IC402.When received signal GSM-L Rx2 was received, the port 471a of switch 471 was connected with port 471d.At this state, the received signal GSM-L Rx2 of the unbalanced signal form that is received by antenna 501 by switch 471 and the received signal GSM-L Rx2 that is transformed into the balanced signal form by BPF415LB, amplifies the back through low noise amplifier 434LB and imports IC402.When received signal UMTS-L Rx2 was received, the port 471a of switch 471 was connected with port 471b.At this state, the received signal UMTS-L Rx of the unbalanced signal form that receives by antenna 501, be transformed into the received signal UMTS-L Rx of balanced signal form by switch 471 and by the BPF419Lb of antenna multicoupler 419L, amplify the back through low noise amplifier 454L and import IC402.
In addition, sending signal GSM-H Tx1 or sending signal GSM-H Tx2 when being sent out, the port 471a of switch 471 is connected with port 471i.At this state, by the transmission signal GSM-H Tx1 of the balanced signal form of IC402 output or send signal GSM-H Tx2, be transformed into the transmission signal GSM-H Tx1 of unbalanced signal form or send signal GSM-H Tx2 by balance converter 403H, present to antenna 501 via power amplifier 404H, LPF405H and switch 471 successively then, send by antenna 501.When transmission signal UMTS-H Tx was sent out, the port 471a of switch 471 was connected with port 471f.At this state, the transmission signal UMTS-H Tx that is exported by IC402 presents to antenna 501 via BPF419Ha and the switch 471 of BPF407H, power amplifier 408H, antenna multicoupler 419H successively, is sent by antenna 501.
When received signal GSM-H Rx1 was received, the port 471a of switch 471 was connected with port 471g.At this state, the received signal GSM-H Rx1 of the unbalanced signal form that is received by antenna 501 by switch 471 and the received signal GSM-H Rx1 that is transformed into the balanced signal form by BPF415HA, amplifies the back through low noise amplifier 434HA and imports IC402.When received signal GSM-H Rx2 was received, the port 471a of switch 471 was connected with port 471h.At this state, the received signal GSM-H Rx2 of the unbalanced signal form that is received by antenna 501 by switch 471 and the received signal GSM-H Rx2 that is transformed into the balanced signal form by BPF415HB, amplifies the back through low noise amplifier 434HB and imports IC402.When received signal UMTS-H Rx was received, the port 471a of switch 471 was connected with port 471f.At this state, the received signal UMTS-H Rx of the unbalanced signal form that receives by antenna 501, be transformed into the received signal UMTS-H Rx of balanced signal form by switch 471 and by the BPF419Hb of antenna multicoupler 419H, amplify the back through low noise amplifier 454H and import IC402.
In the high-frequency circuit of comparative example, by the BPF419Lb of antenna multicoupler 419L, BPF419Hb, the BPF415LA of antenna multicoupler 419H, 415LB, 415HA, 415H and low noise amplifier 434LA, 434LB, 434HA, 434HB, 454L, 454H constitutes receiving circuit.Other structure of the high-frequency circuit of comparative example is identical with high-frequency circuit shown in Figure 44.
In comparative example shown in Figure 45, need 6 low noise amplifiers that price is higher, consequently, receiving circuit and the miniaturization and the cost degradation that comprise the mobile phone high-frequency circuit of this circuit have been brought obstruction.And in the present embodiment, 3 received signal UMTS-L Rx, GSM-L Rx1, shared 1 the low noise amplifier 414L of GSM-L Rx2,3 received signal UMTS-H Rx, GSM-H Rx1, shared 1 the low noise amplifier 414H of GSM-H Rx2, therefore compare the quantity that can make the low noise amplifier that contains in the receiving circuit with comparative example and reduce 4, consequently, receiving circuit and the mobile phone high-frequency circuit that comprises this circuit can be realized miniaturization and cost degradation.In addition, in the present embodiment, by balance converter 412L, 412H will be by switch 411L, the output port 411Lc of 411H, the received signal of the unbalanced signal form of 411Hc output is transformed into the received signal of balanced signal form, and exports low noise amplifier 414L, 414H to, therefore can use differential input and output type low noise amplifier 414L, 414H consequently, can improve receiving sensitivity.In addition, compare, can reduce by 4 low noise amplifiers in the present embodiment, but need newly-increased switch 411L, 411L with comparative example.But the price of switch is lower than low noise amplifier, therefore compares with comparative example, and present embodiment can reduce cost.
Have, the same with the variation 1～3 of execution mode 5, the high frequency electronic component 410L of present embodiment also can be provided with at least one side among low noise amplifier 414L and the BPF413L outside switch 411L and balance converter 412L again.Similarly, the high frequency electronic component 410H of present embodiment also can be provided with at least one side among low noise amplifier 414H and the BPF413H outside switch 411H and balance converter 412H.Other structure, effect and the effect of present embodiment are identical with execution mode 5.
Below, the high frequency electronic component of embodiments of the present invention 10 is described with reference to Figure 46.Figure 46 represents to comprise 2 high frequency electronic component 446L of present embodiment, the high-frequency circuit of 446H.The same with execution mode 9, this high-frequency circuit is handled the signal of 4 GSM modes and the signal of 2 UMTS modes.
High-frequency circuit shown in Figure 46 is provided with antenna 501, switch 471 and IC402.Switch 471 has 9 port 471a, 471b, 471c, 471d, 471e, 471f, 471g, 471h, 471i, with port 471a selectively with port 471b, 471c, 471d, 471e, 471f, 471g, 471h, the arbitrary port among the 471i connects.Port 471a is connected with antenna 501.
The same with execution mode 9, in the present embodiment, IC402 generates and exports the transmission signal UMTS-L Tx of 2 UMTS modes, the transmission signal GSM-L Tx1 of UMTS-H Tx and 4 GSM modes, GSM-L Tx2, GSM-H Tx1, GSM-H Tx2.2 of IC402 output send signal UMTS-L Tx, and UMTS-H Tx is the unbalanced signal form, and 4 of IC402 output send signal GSM-L Tx1, GSM-L Tx2, and GSM-H Tx1, GSM-H Tx2 is the balanced signal form.In addition, the same with execution mode 9, IC402 receives 2 received signal UMTS-L Rx of UMTS mode, the received signal GSM-L Rx1 of UMTS-H Rx and 4 GSM modes, GSM-L Rx2, GSM-H Rx1, GSM-H Rx2.The received signal UMTS-L Rx that IC402 receives, UMTS-H Rx, GSM-L Rx1, GSM-LRx2, GSM-H Rx1, GSM-H Rx2 is the balanced signal form.
Sending signal GSM-L Tx1 and received signal GSM-L Rx1 in the present embodiment is approaching GSM850 (AGSM) of 4 system's midbands shown in the table 1 and the side's among the GSM900 (EGSM) transmission signal and received signal, sends transmission signal and received signal that signal GSM-L Tx2 and received signal GSM-L Rx2 are the opposing party among GSM850 (AGSM) and the GSM900 (EGSM).In addition, send signal UMTS-L Tx and received signal UMTS-L Rx and be 10 wave band midbands shown in the table 2 and GSM850 (AGSM) and the approaching wave band V of GSM900 (EGSM), VI, the transmission signal and the received signal of any one wave band among the VIII.
In addition, sending signal GSM-H Tx1 and received signal GSM-H Rx1 is approaching GSM1800 (DCS) of 4 system's midbands shown in the table 1 and the side's among the GSM1900 (PCS) transmission signal and received signal, sends transmission signal and received signal that signal GSM-H Tx2 and received signal GSM-HRx2 are the opposing party among GSM1800 (DCS) and the GSM1900 (PCS).In addition, send signal UMTS-H Tx and received signal UMTS-H Rx and be 10 wave band midbands shown in the table 2 and GSM1800 (DCS) and the approaching wave band I of GSM1900 (PCS), II, III, IV, IX, the transmission signal and the received signal of any one wave band among the X.
The high-frequency circuit of present embodiment is provided with the high frequency electronic component 446L of present embodiment, 446H, 2 high frequency electronic component 410L of replacement execution mode 9,410H.In addition, the high-frequency circuit of present embodiment is provided with 4 BPF413LA, 413LB, 413HA, 413HB, 2 BPF413L of replacement execution mode 9,413H.Other structure of the high-frequency circuit of present embodiment is identical with the high-frequency circuit of execution mode 9 shown in Figure 44.
High frequency electronic component 446L is provided with: input terminal 446La, 446Lb, 446Lc; Lead-out terminal 446Ld1,446Ld2; Switch 447L; And balance converter 412L.Switch 447L has 3 input port 447La, 447Lb, 447Lc and 1 output port 447Ld, with output port 447Ld selectively with input port 447La, 447Lb, the arbitrary port among the 447Lc connects.Balance converter 412L has 1 uneven input and 2 balance outputs.
High frequency electronic component 446H is provided with: input terminal 446Ha, 446Hb, 446Hc; Lead-out terminal 446Hd1,446Hd2; Switch 447H; And balance converter 412H.Switch 447H has 3 input port 447Ha, 447Hb, 447Hc and 1 output port 447Hd, with output port 447Hd selectively with input port 447Ha, 447Hb, the arbitrary port among the 447Hc connects.Balance converter 412H has 1 uneven input and 2 balance outputs.
The 1st port of antenna multicoupler 409L is connected with the port 471b of switch 471.In addition, the 2nd port of antenna multicoupler 409L is connected with the output of power amplifier 408L.In addition, the 3rd port of antenna multicoupler 409L is connected with the input terminal 446La of high frequency electronic component 446L.
The 1st port of antenna multicoupler 409H is connected with the port 471f of switch 471.In addition, the 2nd port of antenna multicoupler 409H is connected with the output of power amplifier 408H.In addition, the 3rd port of antenna multicoupler 409H is connected with the input terminal 446Ha of high frequency electronic component 446H.
Amplify transmission signal GSM-L Tx1, the uneven output of the power amplifier 404L of GSM-L Tx2 is connected with the port 471e of switch 471 via LPF405L.In addition, amplify transmission signal GSM-H Tx1, the uneven output of the power amplifier 404H of GSM-H Tx2 is connected with the port 471i of switch 471 via LPF405H.
BPF413LA, 413LB, 413HA, 413HB are respectively equipped with 1 uneven input and 1 uneven output.BPF413LA, 413LB, 413HA, the input of 413HB respectively with the port 471c of switch 471,471d, 471g, 471h connects.BPF413LA, the output of 413LB respectively with the input terminal 446Lb of high frequency electronic component 446L, 446Lc connects.BPF413HA, the output of 413HB respectively with the input terminal 446Hb of high frequency electronic component 446H, 446Hc connects.
The input port 447La of switch 447L, 447Lb, 447Lc respectively with the input terminal 446La of high frequency electronic component 446L, 446Lb, 446Lc connects.The output port 447Ld of switch 447L is connected with the uneven input of balance converter 412L.2 the balance outputs of balance converter 412L and the lead-out terminal 446Ld1 of high frequency electronic component 446L, 446Ld2 connects.
The input port 447Ha of switch 447H, 447Hb, 447Hc respectively with the input terminal 446Ha of high frequency electronic component 446H, 446Hb, 446Hc connects.The output port 447Hd of switch 447H is connected with the uneven input of balance converter 412H.2 the balance outputs of balance converter 412H and the lead-out terminal 446Hd1 of high frequency electronic component 446H, 446Hd2 connects.
2 differential input terminals of low noise amplifier 414L and 2 lead-out terminal 446Ld1 of high frequency electronic component 446L, 446Ld2 connects.In addition, 2 differential input terminals of low noise amplifier 414H and 2 lead-out terminal 446Hd1 of high frequency electronic component 446H, 446Hd2 connects.
In the high-frequency circuit of present embodiment, receiving circuit is by BPF409Hb, the high frequency electronic component 446L of BPF409Lb, the antenna multicoupler 409H of antenna multicoupler 409L, 446H, BPF413LA, 413LB, 413HA, 413HB and low noise amplifier 414L, 414H constitutes.
Below, the high frequency electronic component 446L that comprises present embodiment is described, the effect of the high-frequency circuit of 446H.IC402 generates and exports the transmission signal GSM-LTx1 that is the balanced signal form, GSM-L Tx2, GSM-H Tx1, GSM-H Tx2 and the transmission signal UMTS-L Tx that is the unbalanced signal form, UMTS-H Tx.
Sending signal GSM-L Tx1 or sending signal GSM-L Tx2 when being sent out, the port 471a of switch 471 is connected with port 471e.At this state, by the transmission signal GSM-L Tx1 of the balanced signal form of IC402 output or send signal GSM-L Tx2, be transformed into the transmission signal GSM-L Tx1 of unbalanced signal form or send signal GSM-L Tx2 by balance converter 403L, present to antenna 501 via power amplifier 404L, LPF405L and switch 471 successively then, send by antenna 501.
When transmission signal UMTS-L Tx was sent out, the port 471a of switch 471 was connected with port 471b.At this state, the transmission signal UMTS-L Tx that is exported by IC402 presents to antenna 501 via BPF409La and the switch 471 of BPF407L, power amplifier 408L, antenna multicoupler 409L successively, is sent by antenna 501.
Sending signal GSM-H Tx1 or sending signal GSM-H Tx2 when being sent out, the port 471a of switch 471 is connected with port 471i.At this state, by the transmission signal GSM-H Tx1 of the balanced signal form of IC402 output or send signal GSM-H Tx2, be transformed into the transmission signal GSM-H Tx1 of unbalanced signal form or send signal GSM-H Tx2 by balance converter 403H, present to antenna 501 via power amplifier 404H, LPF405H and switch 471 successively then, send by antenna 501.
When transmission signal UMTS-H Tx was sent out, the port 471a of switch 471 was connected with port 471f.At this state, the transmission signal UMTS-H Tx that is exported by IC402 presents to antenna 501 via BPF409Ha and the switch 471 of BPF407H, power amplifier 408H, antenna multicoupler 409H successively, is sent by antenna 501.
When received signal GSM-L Rx1 was received, the port 471a of switch 471 was connected with port 471c, and the output port 447Ld of switch 447L is connected with port 447Lb.At this state, the received signal GSM-L Rx1 of the unbalanced signal form that is received by antenna 501 is successively via switch 471, BPF413LA and switch 447L and import balance converter 412L.Balance converter 412L will be transformed into the received signal GSM-L Rx1 of balanced signal form by the received signal GSM-LRx1 of the unbalanced signal form of switch 447L output, and export differential amplifier 414L to.Be transfused to the received signal GSM-L Rx1 of low noise amplifier 414L, input IC402 after low noise amplifier 414L amplifies.
When received signal GSM-L Rx2 was received, the port 471a of switch 471 was connected with port 471d, and the output port 447Ld of switch 447L is connected with input port 447Lc.At this state, the received signal GSM-L Rx2 of the unbalanced signal form that is received by antenna 501 imports balance converter 412L via switch 471, BPF413LB and switch 447L successively.Balance converter 412L will be transformed into the received signal GSM-L Rx2 of balanced signal form by the received signal GSM-L Rx2 of the unbalanced signal form of switch 447L output, and export differential input and output type low noise amplifier 414L to.Be transfused to the received signal GSM-L Rx2 of low noise amplifier 414L, input IC402 after low noise amplifier 414L amplifies.
When received signal UMTS-L Rx was received, the port 471a of switch 471 was connected with port 471b, and the output port 447Ld of switch 447L is connected with input port 444La.At this state, the received signal UMTS-L Rx of the unbalanced signal form that is received by antenna 501 imports balance converter 412L via the BPF409Lb of switch 471, antenna multicoupler 409L and switch 447L successively.Balance converter 412L will be transformed into the received signal UMTS-L Rx of balanced signal form by the received signal UMTS-L Rx of the unbalanced signal form of switch 447L output, and export differential input and output type low noise amplifier 414L to.Be transfused to the received signal UMTS-L Rx of low noise amplifier 414L, input IC402 after low noise amplifier 414L amplifies.Be transfused to the input port 447La of switch 447L, 447Lb, a plurality of received signals of 447Lc are corresponding to a plurality of high-frequency signals of unbalanced signal form of the present invention.
When received signal GSM-H Rx1 was received, the port 471a of switch 471 was connected with port 471g, and the output port 447Hd of switch 447H is connected with input port 447Hb.At this state, the received signal GSM-H Rx1 of the unbalanced signal form that is received by antenna 501 imports balance converter 412H via switch 471, BPF413HA and switch 447H successively.Balance converter 412H will be transformed into the received signal GSM-H Rx1 of balanced signal form by the received signal GSM-H Rx1 of the unbalanced signal form of switch 447H output, and export differential input and output type low noise amplifier 414H to.Be transfused to the received signal GSM-H Rx1 of low noise amplifier 414H, input IC402 after low noise amplifier 414H amplifies.
When received signal GSM-H Rx2 was received, the port 471a of switch 471 was connected with port 471h, and the output port 447Hd of switch 447H is connected with input port 447Hc.At this state, the received signal GSM-H Rx2 of the unbalanced signal form that is received by antenna 501 imports balance converter 412H via switch 471, BPF413HB and switch 447H successively.Balance converter 412H will be transformed into the received signal GSM-H Rx2 of balanced signal form by the received signal GSM-H Rx2 of the unbalanced signal form of switch 447H output, and export differential input and output type low noise amplifier 414H to.Be transfused to received signal GSM-H Rx2 input IC402 after low noise amplifier 414H amplifies of low noise amplifier 414H.
When received signal UMTS-H Rx was received, the port 471a of switch 471 was connected with port 471f, and the output port 447Hd of switch 447H is connected with input port 447Ha.At this state, the received signal UMTS-H Rx of the unbalanced signal form that is received by antenna 501 imports balance converter 412H via the BPF409Hb of switch 471, antenna multicoupler 409H and switch 447H successively.Balance converter 412H will be transformed into the received signal UMTS-H Rx of balanced signal form by the received signal UMTS-H Rx of the unbalanced signal form of switch 447H output, and export differential input and output type low noise amplifier 414H to.Be transfused to received signal UMTS-H Rx input IC402 after low noise amplifier 414H amplifies of low noise amplifier 414H.Be transfused to the input port 447Ha of switch 447H, 447Hb, a plurality of received signals of 447Hc are corresponding to a plurality of high-frequency signals of unbalanced signal form of the present invention.
In the present embodiment, 3 received signal UMTS-L Rx, GSM-L Rx1, shared 1 the low noise amplifier 414L of GSM-LRx2,3 received signal UMTS-H Rx, GSM-HRx1, shared 1 the low noise amplifier 414H of GSM Rx2, therefore the quantity of the low noise amplifier that contains in the receiving circuit can be made as two, consequently, receiving circuit and the mobile phone high-frequency circuit that comprises this circuit can be realized miniaturization and cost degradation.In addition, in the present embodiment, by balance converter 412L, 412H will be by switch 411L, the output port 411Lc of 411H, the received signal of the unbalanced signal form of 411Hc output is transformed into the received signal of balanced signal form, and exports low noise amplifier 414L, 414H to, therefore can use differential input and output type low noise amplifier 414L, 414H consequently, can make receiving sensitivity improve.
Have, the same with the variation 1～3 of execution mode 5, the high frequency electronic component 446L of present embodiment also can be provided with low noise amplifier 414L and BPF413LA outside switch 447L and balance converter 412L again, among the 413LB at least 1.Similarly, the high frequency electronic component 446H of present embodiment also can be provided with low noise amplifier 414H and BPF413HA outside switch 447H and balance converter 412H, among the 413HB at least 1.Other structure, effect and the effect of present embodiment are identical with execution mode 9.
Below, the high frequency electronic component of embodiments of the present invention 11 is described with reference to Figure 47.Figure 47 represents to comprise 4 high frequency electronic component 410L of present embodiment, 410H, 510L, the high-frequency circuit of 510H.The same with execution mode 9, this high-frequency circuit is handled the signal of 4 GSM modes and the signal of 2 UMTS modes.
The high-frequency circuit of present embodiment is provided with high frequency electronic component 510L, the imported power amplifier 513L of balance and switch 514L, replaces the power amplifier 404L of execution mode 9,408L.In addition, the high-frequency circuit of present embodiment is provided with high frequency electronic component 510H, the imported power amplifier 513H of balance and switch 514H, replaces the power amplifier 404H of execution mode 9,408H.Other structure of present embodiment medium-high frequency circuit is identical with the high-frequency circuit of execution mode 9 shown in Figure 44.
High frequency electronic component 510L is provided with: input terminal 510La, 510Lb; Lead-out terminal 510Lc1,510Lc2; Switch 511L; And balance converter 512L.Switch 511L has 2 input port 511La, 511Lb and 1 output port 511Lc, with output port 511Lc selectively with input port 511La, the arbitrary port among the 511Lb connects.Balance converter 512L has 1 uneven input and 2 balance outputs.
The input port 511La of switch 511L is connected with the input terminal 510La of high frequency electronic component 510L.The input port 511Lb of switch 511L is connected with the input terminal 510Lb of high frequency electronic component 510L.The output port 511Lc of switch 511L is connected with the uneven input of balance converter 512L.2 the balance outputs of balance converter 512L and the lead-out terminal 510Lc1 of high frequency electronic component 510L, 510Lc2 connects.
The uneven output of balance converter 403L is connected with the input terminal 510La of high frequency electronic component 510L.The output of BPF407L is connected with the input terminal 510Lb of high frequency electronic component 510L.
High frequency electronic component 510H is provided with: input terminal 510Ha, 510Hb; Lead-out terminal 510Hc1,510Hc2; Switch 511H; And balance converter 512H.Switch 511H has 2 input port 511Ha, 511Hb and 1 output port 511Hc, with output port 511Hc selectively with input port 511Ha, the arbitrary port among the 511Hb connects.Balance converter 512H has 1 uneven input and 2 balance outputs.
The input port 511Ha of switch 511H is connected with the input terminal 510Ha of high frequency electronic component 510H.The input port 511Hb of switch 511H is connected with the input terminal 510Hb of high frequency electronic component 510H.The output port 511Hc of switch 511H is connected with the uneven input of balance converter 512H.2 the balance outputs of balance converter 512H and the lead-out terminal 510Hc1 of high frequency electronic component 510H, 510Hc2 connects.
The uneven output of balance converter 403H is connected with the input terminal 510Ha of high frequency electronic component 510H.The output of BPF407H is connected with the input terminal 510Hb of high frequency electronic component 510H.
In the present embodiment, sending signal GSM-L Tx1 or sending signal GSM-L Tx2 when being sent out, the port 461a of switch 461 is connected with port 461d, and the port 511Lc of switch 511L is connected with port 511La, and the port 514La of switch 514L is connected with port 514Lb.At this state, by the transmission signal GSM-L Tx1 of the balanced signal form of IC402 output or send signal GSM-L Tx2, be transformed into the transmission signal GSM-L Tx1 of unbalanced signal form or send signal GSM-L Tx2 through balance converter 403L, then, be transformed into the transmission signal GSM-L Tx1 of balanced signal form or send signal GSM-L Tx2 through balance converter 512L by switch 511L.This signal amplifies through power amplifier 513H, as the transmission signal GSM-H Tx1 or the transmission signal GSM-L Tx2 output of unbalanced signal form.This signal is presented to antenna 501 via switch 514L, LPF405L and switch 461 successively, is sent by antenna 501.
When transmission signal UMTS-L Tx was sent out, the port 461a of switch 461 was connected with port 461b, and the port 511Lc of switch 511L is connected with port 511Lb, and the port 514La of switch 514L is connected with port 514Lc.At this state, successively via BPF407L, switch 511L, be transformed into the transmission signal UMTS-L Tx of balanced signal form then through balance converter 512L by the transmission signal UMTS-L Tx of the unbalanced signal form of IC402 output.This signal amplifies through power amplifier 513L, as the transmission signal UMTS-L Tx output of unbalanced signal form.This signal is presented to antenna 501 via BPF409La and the switch 461 of switch 514L, antenna multicoupler 409L successively, is sent by antenna 501.
Sending signal GSM-H Tx1 or sending signal GSM-H Tx2 when being sent out, the port 461a of switch 461 is connected with port 461g, and the port 511Hc of switch 511H is connected with port 511Ha, and the port 514Ha of switch 514H is connected with port 511Hb.At this state, by the transmission signal GSM-H Tx1 of the balanced signal form of IC402 output or send signal GSM-H Tx2, be transformed into the transmission signal GSM-H Tx1 of unbalanced signal form or send signal GSM-H Tx2 through balance converter 403H, then, be transformed into the transmission signal GSM-H Tx1 of balanced signal form or send signal GSM-H Tx2 through balance converter 512H by switch 511H.This signal amplifies through power amplifier 513H, as the transmission signal GSM-H Tx1 or the transmission signal GSM-H Tx2 output of unbalanced signal form.This signal is presented to antenna 501 via switch 514H, LPF405H and switch 461 successively, is sent by antenna 501.
When transmission signal UMTS-H Tx was sent out, the port 461a of switch 461 was connected with port 461e, and the port 511Hc of switch 511H is connected with port 511Hb, and the port 514Ha of switch 514H is connected with port 514Hc.At this state, successively via BPF407H, switch 511H, be transformed into the transmission signal UMTS-H Tx of balanced signal form then through balance converter 512H by the transmission signal UMTS-H Tx of the unbalanced signal form of IC402 output.This signal amplifies through power amplifier 513H, exports as the transmission signal UMTS-H Tx of unbalanced signal form.This signal is presented to antenna 501 via BPF409Ha and the switch 461 of switch 514H, antenna multicoupler 409H successively, is sent by antenna 501.
In the present embodiment, 3 send signal UMTS-L Tx, GSM-L Tx1, shared 1 the power amplifier 513L of GSM-LTx2,3 send signal UMTS-H Tx, GSM-HTx1, shared 1 the power amplifier 513H of GSM-H Tx2, so, compare with execution mode 9, can make the quantity of power amplifier reduce two, consequently, the high-frequency circuit Miniaturizable and the cost degradation of mobile phone.Other structure, effect and the effect of present embodiment are identical with execution mode 9.
Have, the present invention is not limited to the respective embodiments described above again, can carry out various changes.For example, the present invention is applicable to the transtation mission circuit of a plurality of transmission signals of all processing or the receiving circuit of all a plurality of received signals of processing, is not limited to transtation mission circuit or receiving circuit in the mobile phone.
According to above explanation, various execution modes of the present invention and variation obviously can be implemented.Therefore, in the scope that is equal to following claim scope, also can adopt the mode beyond the above-mentioned concrete mode to implement the present invention.
Claims (8)
1. high frequency electronic component is used to comprise the signal processing circuits imported amplifier of balance, that handle a plurality of high-frequency signals of the high-frequency signal that amplifies the balanced signal form, it is characterized in that being provided with:
Have output port and be transfused to the switch of a plurality of input ports of a plurality of high-frequency signals of unbalanced signal form respectively, this switch switches a plurality of high-frequency signals of the described unbalanced signal form that is transfused to a plurality of input ports, from described output port output; And
To be transformed into the high-frequency signal of balanced signal form by the high-frequency signal of the described unbalanced signal form of described output port output, and the high-frequency signal of this balanced signal form be exported to the balance converter of the imported amplifier of described balance.
2. as the high frequency electronic component of claim 1 record, it is characterized in that:
Also be provided with described amplifier.
3. as the high frequency electronic component of claim 1 record, it is characterized in that:
Also be provided with band pass filter, be arranged at least 1 paths in the signal path that is connected with each port of described a plurality of input ports.
4. as the high frequency electronic component of claim 1 record, it is characterized in that:
Also be provided with capacitor, be arranged at least 1 paths in the signal path that is connected with each port of described output port and a plurality of input ports.
5. as the high frequency electronic component of claim 1 record, it is characterized in that:
Also be provided with the multilayer board that comprises stacked a plurality of dielectric layers, described multilayer board comprises a plurality of conductor layers of being located at its inside, and described balance converter constitutes with described a plurality of conductor layers, and described switch carries on described multilayer board.
6. as the high frequency electronic component of claim 1 record, it is characterized in that:
Described signal processing circuit is to handle the transtation mission circuit of a plurality of transmission signals,
A plurality of high-frequency signals of described unbalanced signal form are a plurality of transmission signals of unbalanced signal form,
The imported amplifier of described balance is a power amplifier.
7. as the high frequency electronic component of claim 6 record, it is characterized in that:
Also be provided with the 2nd balance converter, be arranged at least 1 paths in the signal path that is connected with each port of described a plurality of input ports, the transmission signal transformation of balanced signal form is become the transmission signal of unbalanced signal form.
8. as the high frequency electronic component of claim 1 record, it is characterized in that:
Described signal processing circuit is to handle the receiving circuit of a plurality of received signals,
A plurality of high-frequency signals of described unbalanced signal form are a plurality of received signals of unbalanced signal form,
The imported amplifier of described balance is differential input and output type low noise amplifier.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| JP2007297454 | 2007-11-16 | ||
| JP2007297454 | 2007-11-16 | ||
| JP2008057225 | 2008-03-07 | ||
| JP2008064744 | 2008-03-13 |
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| CN101436866A true CN101436866A (en) | 2009-05-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101777977A Pending CN101436866A (en) | 2007-11-16 | 2008-11-17 | High frequency electronic component |
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| Country | Link |
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| JP (1) | JP2009141929A (en) |
| CN (1) | CN101436866A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242856A (en) * | 2013-06-10 | 2014-12-24 | 安华高科技通用Ip(新加坡)公司 | Balum, push-pull type amplication circuit and four LC balum |
| CN114640367A (en) * | 2020-12-01 | 2022-06-17 | Oppo广东移动通信有限公司 | Radio frequency device, radio frequency front end circuit, radio frequency system and communication equipment |
| WO2022160934A1 (en) * | 2021-01-29 | 2022-08-04 | Oppo广东移动通信有限公司 | Radio frequency pa mid device, radio frequency system and communication device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012222491A (en) * | 2011-04-06 | 2012-11-12 | Hitachi Metals Ltd | Module |
| JP5522130B2 (en) * | 2011-08-01 | 2014-06-18 | 株式会社村田製作所 | Unbalance-balance conversion circuit element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61239727A (en) * | 1985-04-17 | 1986-10-25 | Hitachi Ltd | Input circuit of tuner |
| JP2001127663A (en) * | 1999-10-29 | 2001-05-11 | Ngk Spark Plug Co Ltd | Static electricity protection circuit |
| JP4067760B2 (en) * | 2000-11-22 | 2008-03-26 | Ｔｄｋ株式会社 | High frequency electronic circuit module and multilayer board for module |
| JP2003152587A (en) * | 2002-08-26 | 2003-05-23 | Toshiba Corp | Composite system sharing terminal |
| JP2005027185A (en) * | 2003-07-04 | 2005-01-27 | Seiko Epson Corp | High frequency module |
| EP1826914B1 (en) * | 2004-12-13 | 2017-03-01 | Hitachi Metals, Ltd. | High frequency circuit, high frequency circuit components and communication apparatus using the same |
| WO2007083668A1 (en) * | 2006-01-17 | 2007-07-26 | Hitachi Metals, Ltd. | High frequency circuit component and communication apparatus using such high frequency circuit component |
-
2008
- 2008-03-13 JP JP2008064744A patent/JP2009141929A/en active Pending
- 2008-11-17 CN CNA2008101777977A patent/CN101436866A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242856A (en) * | 2013-06-10 | 2014-12-24 | 安华高科技通用Ip(新加坡)公司 | Balum, push-pull type amplication circuit and four LC balum |
| CN104242856B (en) * | 2013-06-10 | 2016-11-16 | 安华高科技通用Ip(新加坡)公司 | Balanced unbalanced transformer, push-pull amplifier circuit and four LC element balanced unbalanced transformers |
| CN114640367A (en) * | 2020-12-01 | 2022-06-17 | Oppo广东移动通信有限公司 | Radio frequency device, radio frequency front end circuit, radio frequency system and communication equipment |
| CN114640367B (en) * | 2020-12-01 | 2024-04-02 | Oppo广东移动通信有限公司 | Radio frequency device, radio frequency front-end circuit, radio frequency system and communication equipment |
| WO2022160934A1 (en) * | 2021-01-29 | 2022-08-04 | Oppo广东移动通信有限公司 | Radio frequency pa mid device, radio frequency system and communication device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009141929A (en) | 2009-06-25 |
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Open date: 20090520 |