CN101436636B - Transparent conductive cathode contact structure for n type silicon - Google Patents
Transparent conductive cathode contact structure for n type silicon Download PDFInfo
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- CN101436636B CN101436636B CN2008102397585A CN200810239758A CN101436636B CN 101436636 B CN101436636 B CN 101436636B CN 2008102397585 A CN2008102397585 A CN 2008102397585A CN 200810239758 A CN200810239758 A CN 200810239758A CN 101436636 B CN101436636 B CN 101436636B
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Abstract
The invention relates to a transparent conductive cathode contact structure used on n-type silicon, which is basically characterized in that a LiF layer (2) is positioned on the n-type silicon (1), and then a transparent conductive electrode (3) is positioned on the Lif layer (2). The Lif layer (2) can reduce the contact potential barrier between the n-type silicon (1) and the transparent conductive electrode (3) to improve the collection or injection efficiency of electrons.
Description
Technical field
The present invention relates to semiconductor applications, be specifically related to a kind of transparent conductive cathode contact structure of the n of being used for type silicon.
Background technology
Transparency conductive electrode is a kind of crucial photoelectric material, and good transparency conductive electrode need satisfy: have near the conductance of metal to realize electrode function; In visible light or wideer spectral region, has high permeability with the outgoing that helps light or enter; And have suitable work function and improve its injection or extraction efficiency to reduce the carrier transport potential barrier.
With tin indium oxide In
2O
3: Sn (ITO), zinc oxide aluminum ZnO:Al (AZO) are widely used in the photoelectric devices such as solar cell, display, light-emitting diode because of its performance with above-mentioned excellence for the transparent inorganic-oxide conductive film (TCO) of representative.But all the time, TCO substantially is that conduct is collected or the anode material of injected hole uses, because their work function is all very high usually.
Yet along with science and technology development, some new devices constantly occur, such as the heterojunction solar cell (HIT solar cell) that is produced on the p type silicon substrate, and the light diode array of vertical stack etc.These requirement on devices light are from negative electrode incident or outgoing, and the demand that this has just proposed the transparent conductive cathode material that is to say that transparency conductive electrode will be produced on the negative electrode, on n type silicon, as the collection or the injecting electrode of electronics.Such cathode electrode requires to have low work function.
Yet the cathode electrode material that work function is low all is more active usually, and the metal material of performance less stable is such as silver, magnesium, calcium etc., even these metals are done to such an extent that very thinly also be difficult to obtain high light transmission rate.Research lanthanum hexaboride (LaB is arranged
6) make transparent cathode, but visible light transmissivity also has only about 70%.The low work function transparent conductive cathode material of excellent performance is still suddenly waited to develop.
If common high work function TCO is used on the negative electrode, because the work function mismatch, formed Schottky contact barrier can hinder transporting of electronics, and this just requires to find the method that can effectively reduce this Schottky contact barrier.
In Organic Light Emitting Diode, a kind of method of improving the negative electrode contact commonly used is arranged, be exactly between organic electron transport layer and aluminium electrode, to insert one deck lithium fluoride (LiF) layer, in international monopoly WO2007102683-A1 disclosed, such patent has a lot.In these structures, owing to do not relate to the problem of light, what therefore adopt is lighttight aluminium electrode.The insertion of LiF layer has improved the contact between organic electron transport layer and the aluminium electrode.
Summary of the invention
The objective of the invention is to overcome the shortcoming of prior art, propose a kind of transparent conductive cathode contact structure that can be used for n type silicon.The essential characteristic of structure of the present invention is: being one deck lithium fluoride LiF layer on n type silicon, is transparency conductive electrode on lithium fluoride LiF layer then.The lithium fluoride LiF layer that inserts between n type silicon and transparency conductive electrode can overcome the existing too high shortcoming of transparency conductive electrode work function, reduces the contact berrier between n type silicon and the transparency conductive electrode, improves the collection or the injection efficiency of electronics.
Wherein, the work function of described transparency conductive electrode is greater than the work function of described n type silicon.
The thickness of described lithium fluoride LiF layer is between 0.5-2nm.
Described n type silicon is monocrystalline silicon, polysilicon, the thin film silicon of n type.
Described thin film silicon is amorphous silicon, microcrystal silicon, nanocrystal silicon.
Described lithium fluoride LiF layer can adopt the way of evaporation to be deposited on the described n type silicon, and then adopts the way of evaporation or sputter to come the deposit transparency conductive electrode on lithium fluoride LiF layer.
Adopt this n type silicon/LiF/ transparency conductive electrode structure, can effectively reduce the contact berrier between n type silicon/transparency conductive electrode, improve electron collection or injection efficiency, make and to adopt the higher relatively transparency conductive electrode of traditional work function, wait such as tin indium oxide (ITO), zinc oxide aluminum (AZO) to prepare the silicon based opto-electronics device that cathodoluminescence or negative electrode are subjected to light, such as luminous tube and solar cell.
Description of drawings
Fig. 1 is a structural representation of the present invention.Wherein, 1 is n type silicon, and 2 is lithium fluoride LiF layer, and 3 is transparency conductive electrode;
Fig. 2 is current-voltage (I-V) design sketch of the n type monocrystalline silicon/LiF/ITO electrode among the embodiment 1;
Fig. 3 is the I-V design sketch of the n type polysilicon/LiF/AZO electrode among the embodiment 2;
Fig. 4 is the I-V design sketch of the n type amorphous silicon/LiF/ITO electrode among the embodiment 3;
Fig. 5 is the I-V design sketch of the n type microcrystal silicon/LiF/AZO electrode among the embodiment 4;
Fig. 6 is the I-V design sketch of the n type nanocrystal silicon/LiF/ITO electrode among the embodiment 5.
Embodiment
Below in conjunction with the drawings and specific embodiments structure of the present invention is described further.
As shown in Figure 1, on n type silicon 1 lithium fluoride LiF layer 2, on lithium fluoride LiF layer 2, be transparency conductive electrode 3 then.Wherein, the work function of described transparency conductive electrode 3 is greater than the work function of described n type silicon 1.The thickness of described lithium fluoride LiF layer 2 is between 0.5-2nm.Described n type silicon 1 is monocrystalline silicon, polysilicon, the thin film silicon of n type.Described thin film silicon is amorphous silicon, microcrystal silicon, nanocrystal silicon.
Described lithium fluoride LiF layer 2 can adopt the way of evaporation to be deposited on the described n type silicon 1, and then adopts the way of evaporation or sputter to come deposit transparency conductive electrode 3 on lithium fluoride LiF layer 2.
Being the lithium fluoride LiF layer that adopts the 0.5nm thickness of thermal evaporation deposit on n type monocrystalline silicon, is the ITO transparency conductive electrode that adopts the deposit of magnetron sputtering way then on lithium fluoride LiF layer.The work function of ITO transparency conductive electrode is greater than the work function of n type monocrystalline silicon.Provided the I-V effect of this n type monocrystalline silicon/LiF/ITO electrode among Fig. 2, curve a is the I-V curve that does not have the n type monocrystalline silicon/ITO electrode of lithium fluoride LiF insert layer, curve b is the I-V curve of this n type monocrystalline silicon/LiF/ITO electrode, contrast as can be seen, the insertion of lithium fluoride LiF layer, reduce the contact berrier of n type monocrystalline silicon/ITO electrode, improved electron collection efficient.
Embodiment 2
Being the lithium fluoride LiF layer that adopts the 1.5nm thickness of thermal evaporation way deposit on n type polysilicon, is the AZO transparency conductive electrode that adopts the deposit of magnetron sputtering way then on lithium fluoride LiF layer.The work function of AZO transparency conductive electrode is greater than the work function of n type polysilicon.Fig. 3 has provided this n type polysilicon/LiF/AZO electrode I-V effect, curve a is the I-V curve that does not have the n type polysilicon/AZO electrode of lithium fluoride LiF insert layer, curve b is the I-V curve of this n type polysilicon/LiF/AZO electrode, contrast as can be seen, the insertion of lithium fluoride LiF layer, reduce the contact berrier of n type polysilicon/AZO electrode, improved electron collection efficient.
Being the lithium fluoride LiF layer that adopts the 2nm thickness of thermal evaporation way deposit on n type amorphous silicon, is the ITO transparency conductive electrode that adopts the deposit of magnetron sputtering way then on lithium fluoride LiF layer.The work function of ITO transparency conductive electrode is greater than the work function of n type amorphous silicon.Provided this n type amorphous silicon/LiF/ITO electrode I-V effect among Fig. 3, curve a is the I-V curve that does not have the n type amorphous silicon/ITO electrode of lithium fluoride LiF insert layer, curve b is the I-V curve of this n type amorphous silicon/LiF/ITO electrode, contrast as can be seen, the insertion of lithium fluoride LiF layer, reduce the contact berrier of n type amorphous silicon/ITO electrode, improved electron collection efficient.
Embodiment 4
Being the lithium fluoride LiF layer 2 that adopts the 1.25nm thickness of thermal evaporation way deposit on n type microcrystal silicon, is the AZO transparency conductive electrode that adopts the deposit of magnetron sputtering way then on lithium fluoride LiF layer 2.The work function of AZO transparency conductive electrode is greater than the work function of n type microcrystal silicon.Fig. 5 has provided this n type microcrystal silicon/LiF/AZO electrode I-V effect, curve a is the I-V curve that does not have the n type microcrystal silicon/AZO electrode of lithium fluoride LiF insert layer, curve b is the I-V curve of this n type microcrystal silicon/LiF/AZO electrode, contrast as can be seen, the insertion of lithium fluoride LiF layer, reduce the contact berrier of n type microcrystal silicon/AZO electrode, improved electron collection efficient.
Embodiment 5
Being the lithium fluoride LiF layer that adopts the 1.25nm thickness of thermal evaporation way deposit on n type nanocrystal silicon, is the ITO transparency conductive electrode that adopts the deposit of magnetron sputtering way then on lithium fluoride LiF layer.The work function of ITO transparency conductive electrode is greater than the work function of n type nanocrystal silicon.Provided this n type nanocrystal silicon/LiF/ITO electrode I-V effect among Fig. 6, curve a is the I-V curve that does not have the n type nanocrystal silicon/ITO electrode of lithium fluoride LiF insert layer, curve b is the I-V curve of this n type nanocrystal silicon/LiF/ITO electrode, contrast as can be seen, the insertion of lithium fluoride LiF layer, reduce the contact berrier of n type nanocrystal silicon/ITO electrode, improved electron collection efficient.
Claims (4)
1. transparent conductive cathode contact structure that is used for n type silicon, it is characterized in that: being one deck lithium fluoride layer on n type silicon, is transparency conductive electrode on the lithium fluoride layer then, and the work function of described transparency conductive electrode is greater than the work function of described n type silicon.
2. the transparent conductive cathode contact structure that is used for n type silicon according to claim 1 is characterized in that: the thickness of described lithium fluoride layer is between 0.5-2nm.
3. the transparent conductive cathode contact structure that is used for n type silicon according to claim 1 and 2 is characterized in that: monocrystalline silicon or polysilicon or thin film silicon that described n type silicon is the n type.
4. the transparent conductive cathode contact structure that is used for n type silicon according to claim 3 is characterized in that: described thin film silicon is amorphous silicon or microcrystal silicon or nanocrystal silicon.
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| CN105932080B (en) * | 2016-05-12 | 2017-08-04 | 苏州协鑫集成科技工业应用研究院有限公司 | Heterojunction solar battery and preparation method thereof |
| CN107093644B (en) * | 2017-04-21 | 2019-04-23 | 江苏天雄电气自动化有限公司 | A kind of photovoltaic generating system with reactive power compensation system |
| CN107393974A (en) * | 2017-07-21 | 2017-11-24 | 协鑫集成科技股份有限公司 | Combination electrode and preparation method thereof and heterojunction solar battery and preparation method thereof |
| CN109256431A (en) * | 2018-08-09 | 2019-01-22 | 暨南大学 | A kind of bimetallic nano layer back contacts and its preparation method and application for throwing silicon solar cell for undoped heterogeneous N-shaped list |
| CN113035975A (en) * | 2021-03-03 | 2021-06-25 | 中国科学院电工研究所 | Glass powder and preparation method thereof, conductive silver paste and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1642376A (en) * | 2004-01-18 | 2005-07-20 | 北京大学 | Organic electroluminiscence element and its making method |
| WO2007102683A1 (en) * | 2006-03-06 | 2007-09-13 | Lg Chem, Ltd. | Novel anthracene derivative and organic electronic device using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1642376A (en) * | 2004-01-18 | 2005-07-20 | 北京大学 | Organic electroluminiscence element and its making method |
| WO2007102683A1 (en) * | 2006-03-06 | 2007-09-13 | Lg Chem, Ltd. | Novel anthracene derivative and organic electronic device using the same |
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Owner name: GAOPING RONGGAO PV SOLAR DEVELOPMENT CO., LTD. Free format text: FORMER OWNER: ELECTROTECHNICS INST., OF THE CHINESE ACADEMY OF SCIENCES Effective date: 20110914 |
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