CN101436614B - self-aligning manufacturing method for antimonous schottky diode - Google Patents
self-aligning manufacturing method for antimonous schottky diode Download PDFInfo
- Publication number
- CN101436614B CN101436614B CN2008102074536A CN200810207453A CN101436614B CN 101436614 B CN101436614 B CN 101436614B CN 2008102074536 A CN2008102074536 A CN 2008102074536A CN 200810207453 A CN200810207453 A CN 200810207453A CN 101436614 B CN101436614 B CN 101436614B
- Authority
- CN
- China
- Prior art keywords
- schottky diode
- antimony
- word line
- conduction type
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention provides an antimonial based Schottky diode which comprises a light doped semiconductor layer and a metal layer tightly contacted with the light doped semiconductor layer, wherein the metal layer contains antimony. In addition, the invention also provides a plurality of methods for self-aligning and manufacturing an antimonial based Schottky diode array; firstly, a second conductiontype heavy doped layer is formed on an intrinsic semiconductor substrate or a first conduction type semiconductor substrate; secondly, second conduction type light doped regions are formed on the second conduction type heavy doped layer; and finally antimonial metal regions are deposited in the light doped region by a self-aligning method in order that each metal region and the corresponding light doped region form Schottky contact; and the Schottky diode array is further manufactured.
Description
Technical field
The present invention relates to a kind of Schottky diode manufacture method, particularly a kind of autoregistration manufacturing is based on the method for the schottky diode array that contains antimony.
Background technology
Diode is as a kind of logical device commonly used, because of characteristics such as size is less are widely used, especially in high density, high performance memory, becomes first-selected logical device especially.The application of diode not only will greatly promote the memory capacity of memory of future generation, also will dwindle the volume of memory body greatly, thereby satisfy more demand.
In the research and development such as novel nonvolatile memories of future generation such as phase transition storages, diode is paid close attention to it than the density advantages of field-effect transistor widely, obviously more possesses advantage based on the phase transition storage of diode in highdensity application.At present, using more diode component in high-density storages such as phase transition storage is PN type diode.
Except the PN diode, Schottky diode has been also because the performance advantage of its each side has received concern, and the difference that its principle is based on the work function between metal and the semiconductor realizes the switching characteristic of diode component, in order to the gating to the integrated circuit (IC)-components unit.In application number is 200810035940.9 Chinese patent, a kind of phase change memory device and preparation method who uses Schottky diode as gate tube proposed, can produce high density, schottky diode array cheaply.Yet the metal that it adopted may be incompatible with semiconductor technology, so be easy to semiconductor process line is polluted; And its manufacturing cost is still too high relatively.And antimony is special in the application of phase transition storage as a kind of material compatible fully with semiconductor technology, all contains the antimony material in material commonly used such as GeSbTe, SiSbTe and the SiSb series, can not pollute semiconductor production line.
Therefore, how to solve metal and the incompatible problem of semiconductor technology that existing Schottky diode is adopted, realize low-cost the manufacturing, become the technical task that those skilled in the art need to be resolved hurrily in fact.
Summary of the invention
The object of the present invention is to provide a kind of and semiconductor technology compatibility based on the Schottky diode that contains antimony, and autoregistration manufacturing cheaply based on the method for the schottky diode array that contains antimony.
Reach other purposes in order to achieve the above object, provided by the inventionly comprise based on the Schottky diode that contains antimony: lightly doped semiconductor layer and the metal level that closely contacts with described lightly doped semiconductor layer, wherein said metal level contains antimony.
Preferably, the contained antimony of described metal level can be the star antimony metal or is the metal alloy of stibium containing material, and the material of described semiconductor layer can be silicon, germanium or III-V compounds of group etc.
In addition, autoregistration manufacturing provided by the invention is based on the method for the schottky diode array that contains antimony, comprise step: 1) in the intrinsic-OR first conductive type semiconductor substrate, form the heavily doped layer of second conduction type, and make the unadulterated thin layer of reservation on the described heavily doped layer by ion implantation; 2) form discrete word line array by photoetching process on established semiconductor-based bottom structure, wherein, each word line is separated by corresponding each shallow channel, and the degree of depth of described each shallow channel surpasses described heavily doped layer; 3) adopt ion implantation to make to be in the semiconductor basal region of each shallow channel bottom to form the heavy doping of first conduction type, so that each word line electric isolation; 4) deposition medium material on established word line array structure makes described dielectric material cover described each word line array; 5) be in the dielectric material of described word line array top by the photoetching process selective etch, make each word line top form a plurality of windows that are used to make the Schottky diode unit; 6) adopt ion implantation to make the coating region that is in each beneath window form the light doping section of second conduction type; 7) deposit the metal area that contains antimony at each window place, make each metal area and corresponding light doping section form Schottky contacts; And 8) adopt CMP (Chemical Mechanical Polishing) process, remove the antimony metal that contains that covers each dielectric material top, the metal area that is in each window place is isolated mutually, to form schottky diode array.
Wherein, step 2) after photoetching was finished, coated photoresist was just removed after step 3) is finished; Also have, more reliable for making each Schottky contacts, can increase the step of annealing in process.
The present invention also can provide the method for a kind of autoregistration manufacturing based on the schottky diode array that contains antimony, comprises step: 1) form discrete line array by photoetching process on semiconductor-based bottom structure, wherein, each lines is separated by each corresponding shallow channel; 2) adopt side atom diffusion method on each lines, to form the heavily doped region of second conduction type, promptly form the word line array, and make and all keep unadulterated thin layer on each heavily doped region respectively, and the degree of depth of each heavily doped region is no more than the degree of depth of corresponding each shallow channel; 3) adopt ion implantation to make to be in the semiconductor basal region of each shallow channel bottom to form the heavy doping of first conduction type, so that each word line electric isolation; 4) deposition medium material on established word line array structure makes described dielectric material cover described each word line array; 5) be in the dielectric material of described word line array top by the photoetching process selective etch, make each word line top form a plurality of windows that are used to make the Schottky diode unit; 6) adopt ion implantation to make the coating region that is in each beneath window form the light doping section of second conduction type; 7) deposit the metal area that contains antimony at each window place, make each metal area and corresponding light doping section form Schottky contacts; 8) adopt CMP (Chemical Mechanical Polishing) process, remove the antimony metal that contains that covers each dielectric material top, the metal area that is in each window place is isolated mutually, to form schottky diode array.
The present invention also can provide the method for a kind of autoregistration manufacturing based on the schottky diode array that contains antimony, comprise step:, inject the second conduction type lightly-doped layer and the second conduction type heavily doped layer that forms closely contact from top to bottom successively by ion 1) at the semiconductor-based end of first conduction type or intrinsic; 2) deposition contains the metal level of antimony to form Schottky contacts on the described second conduction type lightly-doped layer; 3), etch many first shallow channel having at the semiconductor-based end of metal level, and make the degree of depth of each first shallow channel surpass the word line array that the described second conduction type heavily doped layer is separated with formation by photoetching process; 4) inject by ion, make the semiconductor basal region that respectively is in first shallow channel bottom form the heavily doped region of first conduction type, so that each word line electric isolation; 5) pass through photoetching process again, above each word line, produce many second shallow channel, and make each second shallow channel degree of depth to described second conduction type lightly-doped layer and the described second conduction type heavily doped layer intersection, thereby form a plurality of independently Schottky contacts; And 6) each first shallow channel and each second shallow channel are carried out the filling of dielectric material, and carry out CMP (Chemical Mechanical Polishing) process, to form schottky diode array.
Wherein, after the photoetching of step 3) was finished, coated photoresist was just removed after step 4) is finished.
In addition, the contained antimony of metal level or metal area is the star antimony metal or is the metal alloy of stibium containing material that the material at the semiconductor-based end can be silicon, germanium or III-V compounds of group etc.
In sum, of the present invention based on the Schottky diode that contains antimony because contained antimony, and antimony, as a kind of material compatible fully with semiconductor technology, special in the application of phase transition storage, all contain the antimony material in material commonly used such as GeSbTe, SiSbTe and the SiSb series, therefore, it is a desired metallic of making Schottky diode, and can not pollute semiconductor production line, the present invention simultaneously also provides the method for the multiple manufacturing of autoregistration cheaply based on the schottky diode array that contains antimony.
Description of drawings
Figure 1A is for of the present invention based on the Schottky diode schematic cross-section that contains antimony.
Figure 1B is for of the present invention based on the Schottky diode gating phase-changing memory unit circuit diagram that contains antimony.
Fig. 2 A-2H is the flow chart of autoregistration manufacturing of the present invention based on the method for the schottky diode array that contains antimony.
Fig. 3 A-3G is the flow chart of another autoregistration manufacturing of the present invention based on the method for the schottky diode array that contains antimony.
Embodiment
See also Figure 1A and Figure 1B, of the present inventionly comprise at least: lightly doped semiconductor layer 2, and metal level 3 based on the Schottky diode 4 that contains antimony.
Described lightly doped semiconductor layer 2 is created on the heavily doped semiconductor layer 1, and its material that adopts can be silicon, germanium or III-V compounds of group etc.
Described metal level 3 is created on the described lightly doped semiconductor layer 2 and described lightly doped semiconductor layer 2 forms Schottky contacts, and its metal that adopts is the alloy of star antimony or stibium containing material.
Shown in Figure 1B, described Schottky diode 4 is connected with the variable resistor 5 of phase-change memory cell (for example GeSbTe unit), can realize the gating to phase-change memory cell thus.
See also Fig. 2 A～2H, it is the flow chart of a kind of autoregistration manufacturing of the present invention based on the method for the schottky diode array that contains antimony.
Method of the present invention may further comprise the steps at least:
At first, in the intrinsic-OR first conductive type semiconductor substrate, form the heavy doping word line of second conduction type, and make and have unadulterated thin layer on the described heavily doped layer by ion implantation.For example, on the silicon substrate 6 of intrinsic, inject by ion, form n type heavily doped layer 7, the foreign atom kind is phosphorus (P) atom, has kept the thin layer 8 of the intrinsic silicon of undoped simultaneously above heavily doped layer 7, shown in Fig. 2 A, the purpose of heavily doped layer 7 is to make the word line of conduction.Be that the material that adopt at the described semiconductor-based end also can adopt germanium or III-V compounds of group etc. except silicon with noting.
Then, on established semiconductor-based bottom structure, form discrete word line array by photoetching process, wherein, each word line 7 is separated by each shallow channel 9, the degree of depth of described each shallow channel 9 surpasses described heavily doped layer 7, with the word line 7 of effective isolate conductive, shown in Fig. 2 B, keep coated photoresist simultaneously.
Then, the employing ion implantation makes the semiconductor basal region 10 that is in each shallow channel bottom (being the root of each word line 7) form the heavy doping of first conduction types (being the p type), so that each word line (n type) electric isolation, shown in Fig. 2 C, among the figure along the projection of A-A direction shown in Fig. 2 A.Obviously, because the barrier effect of photoresist, each discrete word line 7 will not be doped, only first conductive type ion being carried out in each shallow channel bottom injects, form the heavily doped zone of first conduction type, this zone be centered around discrete lines around, be used for each root word line of electric isolation, inject and to finish back removal photoresist.
Then, on established word line array structure, adopt chemical vapour deposition technique deposition medium material (for example silica), make described dielectric material cover described each word line array, remove redundance by chemico-mechanical polishing, and carry out planarization and operate, obtain the structure shown in Fig. 1 D, among the figure along the projection of B-B direction shown in Fig. 2 E, above each word line, all be coated with silicon oxide layer 11.
Then, be in the dielectric material (being silicon oxide layer 11) of described word line array top by the photoetching process selective etch, make each word line 7 top form a plurality of windows 12 that are used to make the Schottky diode unit, by photoetching process in etch window, the position of window 12 be positioned at every word line 7 directly over, sectional view is shown in Fig. 2 F.
Then, adopt ion implantation (for example injecting the P atom) to make the coating region that is in each beneath window form the light doping section 13 of second conduction type, shown in Fig. 2 G, wherein, light doping section 13 is the silicon through slight phosphorus doping.
Then, the metal area 14 that contains antimony in each window 12 places deposition, make each metal area 14 and corresponding light doping section 13 form Schottky contacts, described each metal area 14 contained antimony are the star antimony metal or are the metal alloy of stibium containing material, in the present embodiment, employing be the star antimony metal, so, have Schottky barrier between each metal area 14 and the slight silicon 13 that mixes, just formed Schottky diode structure between the two.
At last, adopt CMP (Chemical Mechanical Polishing) process, removal covers the antimony metal that contains of each dielectric material top, the metal area 14 that is in each window 13 place is isolated mutually, to form schottky diode array, shown in Fig. 1 H, just so formed schottky diode array with self aligned approach, possess switching characteristic, can be used as gating device.
In addition, more reliable for making each Schottky contacts, also can increase the step of an annealing in process, this known to those skilled in the art knowing no longer describes in detail at this.
The present invention also provides the method for a kind of autoregistration manufacturing based on the schottky diode array that contains antimony, itself and above-mentioned different being of method: at first on semiconductor-based bottom structure, form discrete line array by photoetching process, wherein, each lines is separated by each corresponding shallow channel, adopt side atom diffusion method on each lines, to form the heavily doped region of second conduction type then, promptly form the word line array, and make and all keep unadulterated thin layer on each heavily doped region respectively, and the degree of depth of each heavily doped region is no more than the degree of depth of corresponding each shallow channel, it is similar to follow each follow-up step and above-mentioned method, no longer repeats at this.
See also Fig. 3 A～3G again, it is the flow chart of another autoregistration manufacturing of the present invention based on the method for the schottky diode array that contains antimony.In the method, may further comprise the steps at least:
At first, at the semiconductor-based end 15 of first conduction type or intrinsic, inject the second conduction type lightly-doped layer 17 and the second conduction type heavily doped layer 16 that forms closely contact from top to bottom successively by ion, as shown in Figure 3A, wherein, the material that adopts can be silicon, germanium or III-V compounds of group etc. at the described semiconductor-based end 15.
Then, deposition contains the metal level 18 of antimony on the described second conduction type lightly-doped layer 17, shown in Fig. 3 B, described metal level 18 contained antimony can be the star antimony metal or are the metal alloy of stibium containing material, in the present embodiment, depositing Ti doping Sb alloy material, wherein, the Ti atom content is 2 percent atomic ratios in the Ti doping Sb alloy material, so, form Schottky barrier between Ti doping Sb alloy material and the lightly-doped layer 17, i.e. metal-semiconductor contact.
Then, pass through photoetching process, etch many first shallow channel 19 having at the semiconductor-based end of metal level 18, and make the degree of depth of each first shallow channel 19 surpass the word line array that the described second conduction type heavily doped layer 16 is separated with formation, among Fig. 3 B along the projection of D-D direction shown in Fig. 3 C, heavily doped layer 16 is a conductive word lines, keeps coated photoresist simultaneously.
Then, inject by ion, make the semiconductor basal region that respectively is in first shallow channel, 19 bottoms form the heavily doped region 20 of first conduction type, so that each word line electric isolation, guarantee that signal does not disturb between each word line, shown in Fig. 3 D, among this moment figure along the projection of E-E direction shown in Fig. 3 B, obviously because the barrier effect of photoresist, each discrete word line will not be doped, only first conductive type ion is carried out in each shallow channel bottom and injects, form the first conduction type heavily doped region 20, this zone be centered around discrete lines around, be used for each root word line of electric isolation, remove photoresist after injection is finished.
Then, pass through photoetching process again, above each word line, produce many second shallow channel 21, and make each second shallow channel, 21 degree of depth to described second conduction type lightly-doped layer 17 and the described second conduction type heavily doped layer, 16 intersections, thereby form a plurality of independently Schottky contacts, the schematic diagram of Fig. 3 B after the above-mentioned technology of process is shown in Fig. 3 E, and obvious second shallow channel 21 will be shallower than first shallow channel 19.
At last, each first shallow channel and each second shallow channel are carried out the filling of dielectric material (for example), and carry out CMP (Chemical Mechanical Polishing) process, to form schottky diode array, shown in Fig. 3 F, at this moment, among the figure along the projection of F-F direction shown in Fig. 3 G, just so produced schottky diode array based on the Ti-Sb alloy.
Be that Fig. 2 A～Fig. 2 H and Fig. 3 A～Fig. 3 G are not that equal proportion is drawn, and are illustrated at this with noting.
In sum, the invention provides a kind of based on the Schottky diode that contains antimony metal (or alloy) and adopt the self aligned approach manufacturing to contain the method for the schottky diode array of antimony metal (or alloy), therefore difference owing to work function is arranged between the light dope semiconductor that contains the antimony metal (or alloy) and second conduction type can form stable Schottky contacts (metal-semiconductor contact).Simultaneously because antimony material and semiconductor technology compatibility are not polluted semiconductor process line; Special in the application of phase transition storage, the antimony material is as the element in the phase-change material alloy (as GeSbTe, SiSbTe and SiSb), and is also compatible fully with phase-change material.Moreover, when the method for making based on the schottky diode array of stibium containing material, for forming the coated photoresist of word line array, up to just being removed after doping is finished once more to the semiconductor substrate, so can reduce exposure frequency effectively, cost is controlled effectively, and then can effectively promotes the competitiveness of diode array on cost.
Here description of the invention and application is illustrative, is not to want with scope restriction of the present invention in the above-described embodiments.Here the distortion of disclosed embodiment and change are possible, and the various parts of the replacement of embodiment and equivalence are known for those those of ordinary skill in the art.Those skilled in the art are noted that under the situation that does not break away from spirit of the present invention or substantive characteristics, and the present invention can be with other forms, structure, layout, ratio, and realize with other elements, material and parts.Under the situation that does not break away from the scope of the invention and spirit, can carry out other distortion and change here to disclosed embodiment.
Claims (11)
1. an autoregistration manufacturing is characterized in that comprising step based on the method for the schottky diode array that contains antimony:
1) in the intrinsic-OR first conductive type semiconductor substrate, forms the heavily doped layer of second conduction type by ion implantation, and make the unadulterated thin layer of reservation on the described heavily doped layer;
2) form discrete word line array by photoetching process on established semiconductor-based bottom structure, wherein, each word line is separated by each corresponding shallow channel, and the degree of depth of described each shallow channel surpasses described heavily doped layer;
3) adopt ion implantation to make to be in the semiconductor basal region of each shallow channel bottom to form the heavy doping of first conduction type, so that each word line electric isolation;
4) deposition medium material on established word line array structure makes described dielectric material cover described each word line array;
5) be in the dielectric material of described word line array top by the photoetching process selective etch, make each word line top form a plurality of windows that are used to make the Schottky diode unit;
6) adopt ion implantation to make the coating region that is in each beneath window form the light doping section of second conduction type;
7) deposit the metal area that contains antimony at each window place, make each metal area and corresponding light doping section form Schottky contacts;
8) adopt CMP (Chemical Mechanical Polishing) process, remove the antimony metal that contains that covers each dielectric material top, the metal area that is in each window place is isolated mutually, to form schottky diode array.
2. autoregistration manufacturing as claimed in claim 1 is characterized in that: step 2 based on the method for the schottky diode array that contains antimony) photoetching finish after, coated photoresist is just removed after step 3) is finished.
3. autoregistration manufacturing as claimed in claim 1 is characterized in that based on the method for the schottky diode array that contains antimony: the contained antimony of described each metal area is the star antimony metal or is the metal alloy of stibium containing material.
4. autoregistration manufacturing as claimed in claim 1 is characterized in that also comprising annealing in process so that the more reliable step of each Schottky contacts based on the method for the schottky diode array that contains antimony.
5. autoregistration manufacturing as claimed in claim 1 is characterized in that based on the method for the schottky diode array that contains antimony: the material at the described semiconductor-based end is: silicon, germanium, and the III-V compounds of group in a kind of.
6. an autoregistration manufacturing is characterized in that comprising step based on the method for the schottky diode array that contains antimony:
1) form discrete line array by photoetching process on semiconductor-based bottom structure, wherein, each lines is separated by each corresponding shallow channel;
2) adopt side atom diffusion method on each lines, to form the heavily doped region of second conduction type, promptly form the word line array, and make and all keep unadulterated thin layer on each heavily doped region respectively, and the degree of depth of each heavily doped region is no more than the degree of depth of corresponding each shallow channel;
3) adopt ion implantation to make to be in the semiconductor basal region of each shallow channel bottom to form the heavy doping of first conduction type, so that each word line electric isolation;
4) deposition medium material on established word line array structure makes described dielectric material cover described each word line array;
5) be in the dielectric material of described word line array top by the photoetching process selective etch, make each word line top form a plurality of windows that are used to make the Schottky diode unit;
6) adopt ion implantation to make the coating region that is in each beneath window form the light doping section of second conduction type;
7) deposit the metal area that contains antimony at each window place, make each metal area and corresponding light doping section form Schottky contacts;
8) adopt CMP (Chemical Mechanical Polishing) process, remove the antimony metal that contains that covers each dielectric material top, the metal area that is in each window place is isolated mutually, to form schottky diode array.
7. autoregistration manufacturing as claimed in claim 6 is characterized in that based on the method for the schottky diode array that contains antimony: the contained antimony of described each metal area is the star antimony metal or is the metal alloy of stibium containing material.
8. an autoregistration manufacturing is characterized in that comprising step based on the method for the schottky diode array that contains antimony:
1), injects the second conduction type lightly-doped layer and the second conduction type heavily doped layer that forms closely contact from top to bottom successively by ion at the semiconductor-based end of first conduction type or intrinsic;
2) deposition contains the metal level of antimony to form Schottky contacts on the described second conduction type lightly-doped layer;
3), etch many first shallow channel having at the semiconductor-based end of metal level, and make the degree of depth of each first shallow channel surpass the word line array that the described second conduction type heavily doped layer is separated with formation by photoetching process;
4) inject by ion, make the semiconductor basal region that respectively is in first shallow channel bottom form the heavily doped region of first conduction type, so that each word line electric isolation;
5) pass through photoetching process again, above each word line, produce many second shallow channel, and make each second shallow channel degree of depth to described second conduction type lightly-doped layer and the described second conduction type heavily doped layer intersection, thereby form a plurality of independently Schottky contacts;
6) each first shallow channel and each second shallow channel are carried out the filling of dielectric material, and carry out CMP (Chemical Mechanical Polishing) process, to form schottky diode array.
9. autoregistration manufacturing as claimed in claim 8 is characterized in that based on the method for the schottky diode array that contains antimony: after the photoetching of step 3) was finished, coated photoresist was just removed after step 4) is finished.
10. autoregistration manufacturing as claimed in claim 8 is characterized in that based on the method for the schottky diode array that contains antimony: the contained antimony of described metal level is the star antimony metal or is the metal alloy of stibium containing material.
11. autoregistration manufacturing as claimed in claim 8 is characterized in that based on the method for the schottky diode array that contains antimony: the material at the described semiconductor-based end is: silicon, germanium, and the III-V compounds of group in a kind of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102074536A CN101436614B (en) | 2008-12-19 | 2008-12-19 | self-aligning manufacturing method for antimonous schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102074536A CN101436614B (en) | 2008-12-19 | 2008-12-19 | self-aligning manufacturing method for antimonous schottky diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101436614A CN101436614A (en) | 2009-05-20 |
| CN101436614B true CN101436614B (en) | 2011-05-11 |
Family
ID=40710938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102074536A Active CN101436614B (en) | 2008-12-19 | 2008-12-19 | self-aligning manufacturing method for antimonous schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101436614B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101826463B (en) * | 2010-04-01 | 2012-02-29 | 中国科学院上海微系统与信息技术研究所 | Schottky diode and phase-change memory which share metal layer and manufacturing method thereof |
| CN104124283B (en) * | 2014-08-07 | 2018-10-26 | 上海芯石微电子有限公司 | A kind of schottky barrier device of doping and preparation method thereof |
| CN109686755B (en) * | 2018-12-26 | 2022-07-05 | 上海集成电路研发中心有限公司 | High-density phase change memory and preparation method thereof |
-
2008
- 2008-12-19 CN CN2008102074536A patent/CN101436614B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101436614A (en) | 2009-05-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10580976B2 (en) | Three-dimensional phase change memory device having a laterally constricted element and method of making the same | |
| CN100481553C (en) | Memory cell and method of forming the same, memory cell array and operating method thereof | |
| US7422917B2 (en) | Forming tapered lower electrode phase-change memories | |
| US10964752B2 (en) | Three-dimensional memory device including laterally constricted current paths and methods of manufacturing the same | |
| US8975148B2 (en) | Memory arrays and methods of forming memory cells | |
| US20080315174A1 (en) | Variable resistance non-volatile memory cells and methods of fabricating same | |
| CN101017878A (en) | Phase change ram comprising resistive element having diode function and methods of manufacturing and operating the same | |
| US11043537B2 (en) | Three-dimensional phase change memory device including vertically constricted current paths and methods of manufacturing the same | |
| US7858961B2 (en) | Phase change memory devices and methods for fabricating the same | |
| CN101894771B (en) | Manufacturing method of multilayer stacked resistance transit storage | |
| US20170229513A1 (en) | Superlattice memory and crosspoint memory device | |
| CN109686755A (en) | High-density phase-change memory and preparation method thereof | |
| CN101436614B (en) | self-aligning manufacturing method for antimonous schottky diode | |
| CN101459129B (en) | Self-aligning Schottky diode and corresponding resistor conversion memory production method | |
| CN101882617B (en) | Schottky diode, semiconductor memory and manufacturing technology thereof | |
| CN112447716A (en) | Vertical transistor array and method of forming a vertical transistor array | |
| KR102578801B1 (en) | Variable resistance memory device | |
| CN101436607B (en) | Electric resistance transition memory and manufacturing method thereof | |
| CN114792755A (en) | Phase change memory and manufacturing method thereof | |
| US20160056375A1 (en) | Semiconductor Constructions and Methods of Forming Memory Cells | |
| CN102479921A (en) | Manufacture method of phase change memory | |
| CN101826463B (en) | Schottky diode and phase-change memory which share metal layer and manufacturing method thereof | |
| CN101752312A (en) | Manufacturing method of high-density diode array with double shallow trench isolation channels | |
| CN102376883B (en) | The manufacture method of phase transition storage | |
| CN102468432B (en) | Manufacturing method of phase change semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |