CN101432627A - Capacitive sensor - Google Patents
Capacitive sensor Download PDFInfo
- Publication number
- CN101432627A CN101432627A CNA2007800154915A CN200780015491A CN101432627A CN 101432627 A CN101432627 A CN 101432627A CN A2007800154915 A CNA2007800154915 A CN A2007800154915A CN 200780015491 A CN200780015491 A CN 200780015491A CN 101432627 A CN101432627 A CN 101432627A
- Authority
- CN
- China
- Prior art keywords
- movable electrode
- capacitance type
- type sensor
- fixed electorde
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
Disclosed is a capacitive sensor (1) comprising a fixed electrode (6) and a movable electrode (5) movably supported by an anchor portion (3) via a beam (4). In this capacitive sensor (1), a sensing portion is constituted by arranging the fixed electrode (6) and the movable electrode (5) opposite to each other in such a manner that the electrodes are apart from each other, and the capacitive sensor (1) senses a certain physical quantity by sensing a capacitance corresponding to the distance between the electrodes. In this capacitive sensor (1), a stress relaxation portion (30) for releasing stress is provided on at least one of an end (4a) of the beam (4) to be connected to the anchor portion (3) and an end (4b) of the beam (4) to be connected to the movable electrode (5).
Description
Technical field
The present invention relates to a kind of capacitance type sensor, described capacitive sensing is by detecting the capacitance detecting predetermined physical value between fixed electorde and the movable electrode.
Background technology
Traditionally, has a kind of capacitance type sensor, wherein form and have by the structure of elastic component by the movable electrode of fixed part support, movable electrode can shift near or away from fixed electorde according to external force, detect the electric capacity between these electrodes, thus the various physical values of test example such as acceleration and angular velocity (referring to patent documentation 1).As this capacitance type sensor, a mass fraction with displacement that can be by the physical values of acceleration for example detects the known capacitance type sensor (referring to patent documentation 2 and patent documentation 3) at the physical values of the direction of Z-axis.
According to the capacitance type sensor of patent documentation 1, elastic component forms as the beam from the fixed part spiral extension and forms, and by elastic component by the movable movable electrode that supports of fixed part mainly at the direction top offset that extends along the surface of sensor (semiconductor layer).Each capacitance type sensor according to patent documentation 2 and 3, asymmetric mass fraction supports from the torsion beam that the fixed part that is called the bearing part extends by the horizontal direction in symmetry, make to lose mass balance, and physical values can detect according to the position displacement of the physical values that increases in vertical direction by this mass fraction of being caused by torsion beam.
According to the capacitance type sensor of patent documentation 2, this capacitance type sensor forms by processing metallic.According to patent documentation 3, the semiconductor substrate of silicon forms capacitance type sensor by for example utilizing known semiconducter process for example to process.When device is formed by machine silicon by semiconducter process, owing to can carry out microfabrication, so, and compare by the situation that processing metallic forms as the capacitance type sensor the situation in the patent documentation 3, can form less and more accurate capacitance type sensor.
Under the situation of the structure that movable electrode is movably supported by fixed part by beam as patent documentation 1, the stress that produces in beam is according to changing as the shape of the beam of elastic component and the peak acceleration that is applied to sensor, but when thin and long beam is set, when sensor production is compactness or setting spring constant, it is big that the stress that produces in beam tends to become, and in some cases, very difficult setting for example the specification of the displacement of traveling electrode or weight to ideal value.
According to disclosed capacitance type sensor in patent documentation 3, because the monocrystalline silicon plate forms by crystalline anisotropy's etching, so the various piece with the part of bearing for example is the problem of taper, and the defective of part (deficit) or adhesion produce by increasing device size or mobile movable electrode.When substrate adds man-hour by crystalline anisotropy's etching, because mass fraction has quality to a certain degree, so, have the problem that is difficult to form the mass fraction that strengthens detection sensitivity.
In view of above situation, the present invention has been proposed, the objective of the invention is in having, to reduce the stress of beam by the capacitance type sensor of beam by the movable electrode of the movable support of fixed part.Another object of the present invention provides to have and can avoid increasing or movable electrode moves the capacitance type sensor of the structure of the defective of production part or adhesion by plant bulk.
Patent documentation 1: Japanese Unexamined Patent Publication No: 2000-28634
Patent documentation 2: US Patent specification: the 4736629th
Patent documentation 3: US Patent specification: the 6000287th
Summary of the invention
A first aspect of the present invention provides a kind of capacitance type sensor, described capacitance type sensor comprise fixed electorde and by beam by the movable movable electrode that supports of the fixed part of semiconductor layer, wherein fixed electorde and movable electrode are toward each other, accompany the gap betwixt, thereby composition detecting unit, detect the electric capacity of the size that is fit to described gap, thereby detect predetermined physical values, wherein be connected to the end of beam of fixed part and the end that is connected to the beam of movable electrode and be provided with one of at least the stress regulon of regulating stress raisers.
A second aspect of the present invention provides a kind of capacitance type sensor, described capacitance type sensor comprises by the beam part by movable first detecting unit that supports of the fixed part of semiconductor layer, make and keep asymmetric weight balancing, first movable electrode that moves according to the displacement of physical values on the thickness direction of semiconductor layer wherein, and be formed on the supporting substrate of support semiconductor layer first fixed electorde toward each other, accompany the gap betwixt, and first detecting unit basis is based on the described physical values of capacitance detecting of the size detection of first movable electrode and first fixed electorde, semiconductor layer is a monocrystalline silicon layer, and capacitance type sensor comprises the travel mechanism of first movable electrode, and described travel mechanism comprises fixed part, beam part and first movable electrode that forms by vertical etching single crystal silicon layer.
Capacitance type sensor according to a first aspect of the invention, stress tend in beam the part that becomes big, that is, be connected to beam fixed part the end and be connected to movable electrode beam the end be provided with one of at least the stress regulon of regulating stress.Therefore, can reduce and in beam, produce stress.
Capacitance type sensor according to a second aspect of the invention can strengthen the sensitivity of detection, and can avoid the defective or the adhesion of the motion production part of increase by plant bulk or movable electrode.Form travel mechanism by vertical etching processing technology, can obtain the uniform cross-sectional area shape, therefore, can significantly reduce another sensitivity.In addition, because semiconductor layer is a monocrystalline silicon, so, there is not membrane stress, and processing easily.
Description of drawings
Fig. 1 is the plan view of the semiconductor layer of capacitance type sensor according to an embodiment of the invention;
Fig. 2 is the cross section view of the capacitance type sensor cut open of the line A-A along Fig. 1;
Fig. 3 is the cross section view of the capacitance type sensor cut open of the line B-B along Fig. 1;
Fig. 4 is the cross section view of the beam part of capacitance type sensor (the line C-C along Fig. 2 cuts open) according to an embodiment of the invention;
Fig. 5 is the simplified schematic diagram of the swing movable electrode of capacitance type sensor according to an embodiment of the invention, wherein (a) shows the non-oscillatory state of movable electrode, (b) show the state of the nearly fixed electorde of one side joint, show the state of opposite side near fixed electorde and scheme (c);
Fig. 6 is an amplification sketch of obtaining part (potential taking-out portion) as the electromotive force of the part of the semiconductor layer of capacitance type sensor according to an embodiment of the invention, wherein (a) is plan view, (b) be the cross section view of cutting open along the line D-D in (a), and (c) be presented at the preceding state of assembling;
Fig. 7 shows that the plan view (a) of each example of the stress regulon of capacitance type sensor arrives (c) according to an embodiment of the invention;
Fig. 8 shows the plan view (a) of another example of the stress regulon of capacitance type sensor according to an embodiment of the invention and (b);
Fig. 9 is the explanation view of demonstration as the structure of the semiconductor layer of the capacitance type sensor of the first embodiment of the present invention;
Figure 10 is the cross section view that is used for illustrating the recess of the semiconductor layer that is formed at capacitance type sensor;
Figure 11 is the cross section view that shows the state of the recess in the semiconductor layer of the capacitance type sensor that is formed by crystalline anisotropy's etching;
Figure 12 is that explanation utilizes SOI (silicon on insulated substrate) substrate to form the example view of capacitance type sensor;
The movable electrode that Figure 13 shows capacitance type sensor is in vertical direction and the view of non-warping displacement;
Figure 14 is the explanation view of installation site of the fixed electorde of capacitance type sensor;
Figure 15 shows the state of off-centring of converting motion of the movable electrode of mobile capacitance type sensor;
Figure 16 is the explanation view of shape of the fixed electorde of capacitance type sensor;
Figure 17 is the explanation view as the structure of the semiconductor layer of the capacitance type sensor of the second embodiment of the present invention;
Figure 18 is the cross section view that is used for illustrating the state that line D-D that capacitance type sensor shows along Figure 14 cuts open;
Figure 19 is the explanation view of concrete structure of detecting unit of the horizontal direction detecting unit of capacitance type sensor; And
Figure 20 is the explanation view of another shape of the movable electrode of capacitance type sensor.
Embodiment
Specify embodiments of the invention with reference to figure below.
[first embodiment]
As shown in Figure 2, as the capacitance type sensor 1 of the first embodiment of the present invention (hereinafter, abbreviate sensor 1 as) have a semiconductor layer 2 that obtains by the processing semiconductor substrate, and before for example the insulation course 20 of glass substrate and 21 is attached in conjunction with (anodic bonding) by anode and on the rear side, form in the mating surface of shallow relatively recess 22 between semiconductor layer 2 and insulation course 20 and 21, guaranteed the insulating property of semiconductor layer 2 and the mobile easiness of movable electrode 5.In the present embodiment, be provided with recess 22 on semiconductor layer 2 one sides at the mating surface between semiconductor layer 2 and the insulation course 20, and the mating surface between semiconductor layer 2 and the semiconductor layer 2 is provided with the recess 22 on insulation course 21 1 sides.
Conducting stratum 23 is formed on the surperficial 20a of insulation course 20, and conducting stratum 23 usefulness act on the electrode of the electromotive force of the various piece that obtains semiconductor layer 2.In the present embodiment, insulation course 20 is sandblasted and is formed with through hole 24, a part of surface (on the surface of the semiconductor layer 2 of a side of insulation course 20) of exposing semiconductor layer 2, conducting stratum 23 surface and the interior perimeter surface of through hole 24 and the surfaces (surface of bearing part 3 among Fig. 2) of semiconductor layer 2 of formation for example to be electrically connected insulation course 20 make the electromotive force of each part in semiconductor layer 2 to be detected by conducting stratum 23 continuously.The surface of preferred insulation course 20 applies (molded) with the resin bed (not shown).
Shown in Fig. 1 to 3, semiconductor substrate is formed with gap 10 by known semiconducter process, thereby forms bearing part 3, beam part 4, movable electrode 5, frame part 7 and obtain part B at the electromotive force of semiconductor layer 2.As shown in Figure 1, watch from the top, the whole essentially rectangular shapes that form of semiconductor layer 2, frame part 7 is along the form setting with framework with substantially constant width of four peripheries (four sides) of semiconductor layer 2.
As reactive ion etching, can utilize ICP processing by for example having the etching device of inductively coupled plasma (ICP).Because each of big plate portion 5a and platelet part 5b formed by a monocrystalline silicon substrate, so size is bigger greater than the quality of the big plate portion 5a of platelet part 5b.
Watch from the top towards a long side (upside Fig. 1) of frame part 7, the column bearing part 3 with rectangular cross section (being the cross section of general square shape in the present embodiment) is arranged on the inside of frame part 7 of the position at the center of departing from semiconductor layer 2 a little.Beam part 4 is extended with the 4 pair of sidewalls almost parallel ground from the bearing part 3 relative with the short side of frame part 7, though in Fig. 2 and present embodiment shown in Figure 3,3 adjacency of bearing part (being attached to) insulation course 20, but bearing part 3 can be further in abutting connection with (being attached to) insulation course 21.
As shown in Figure 4, beam part 4 forms as the beam with constant rectangle (essentially rectangular) xsect.For example, semiconductor layer 2 is 10mm or more (500mm or still less) at the height h of its thickness direction, and semiconductor layer 2 is several millimeters (about 3 to 10mm) in the width W along its surperficial direction, but these values can change according to overall dimensions.Beam part 4 has constant xsect, and extends in the direction along the long side of frame part 7.Be connected to movable electrode 5 with end in the opposite beam part 4 of the end 4a of bearing part 3 one sides.
The beam part 4 and 4 of movable electrode 5 by having asymmetric mass balance movably supported by the bearing part 3 as the fixed part of sensor 1.This structure has the semiconductor layer 2 in gap 10 by formation and forms insulation course 20 with recess 22 and 21 obtain one of at least.Bearing part 3, beam part 4 and 4 and movable electrode 5 be formed integrally as the part of semiconductor layer 2.Bearing part 3, beam part 4 and 4 and the electromotive force of movable electrode 5 can think equal substantially.
In the present embodiment, insulation course 20 is provided with fixed electorde 6A and 6B at its lower surface 20b, and for example, the big plate portion 5a with movable electrode is relative with platelet part 5b respectively.Electric capacity and the electric capacity platelet part 5b and fixed electorde 6B between of detection between big plate portion 5a and fixed electorde 6A, the feasible variation that can detect these gaps, therefore, can detect the variation of swinging position of the fixed part of the relative sensor 1 of movable electrode.
Fig. 5 (a) has shown that movable electrode 5 is not swung and the state parallel with the lower surface 20b of insulation course 20.In this state, the size of the gap 25a between big plate portion 5a and fixed electorde 6A and the size of the gap 25b between platelet part 5b and fixed electorde 6B are equal to each other.Therefore, relative area and the relative area between platelet part 5b and fixed electorde 6B between big plate portion 5a and fixed electorde 6A are equal to each other, and electric capacity and the electric capacity between platelet part 5b and fixed electorde 6B between big plate portion 5a and fixed electorde 6A are equal to each other.
Fig. 5 (b) has shown following state: movable electrode 5 swings and the lower surface 20b inclination of insulation course 20 relatively, and big plate portion 5a separates with fixed electorde 6A, and platelet part 5b is near fixed electorde 6B.In this state, compare with the state in being presented at Fig. 5 (a), it is big that gap 25a becomes, and gap 25b diminishes.Therefore, the electric capacity between big plate portion 5a and fixed electorde 6A reduces, and the electric capacity between platelet part 5b and the fixed electorde 6B increases.
Fig. 5 (c) has shown following state: movable electrode 5 swings, and insulation course 20 relative lower surface 20b tilt, and big plate portion 5a is near fixed electorde 6A, and platelet part 5b separates with fixed electorde 6B.In this state, compare with the state in being presented at Fig. 5 (a), gap 25a diminishes, and gap 25b becomes big.Therefore, the electric capacity between big plate portion 5a and fixed electorde 6A increases, and the electric capacity between platelet part 5b and the fixed electorde 6B reduces.
Therefore, can obtain voltage waveform by C-V conversion acquisition, and detecting the various physical values (acceleration and angular velocity) that are increased to sensor 1 from the different output between electric capacity, described electric capacity is that the electric capacity and the gap 25b between platelet part 5b and fixed electorde 6B of detector gap is the electric capacity of detector gap for the gap 25a between big plate portion 5a and fixed electorde 6A.
These electric capacity can obtain from the electromotive force of movable electrode 5 and fixed electorde 6A and 6B.In the present embodiment, as depicted in figs. 1 and 2, through hole 24 is formed in the insulation course on the bearing part 3, and the electromotive force of movable electrode 5 arrives by the conductive layer on the inside surface that is formed at through hole 24 23.
Fixed electorde 6 forms the conductive layer (for example, aluminium alloy layer) of the essentially rectangular on the lower surface 20b of insulation course 20.In the formation step of fixed electorde 6, wire pattern 11 and terminal 9 are also simultaneously as forming from fixed electorde 6 continuous conducting layers.Therefore, the electromotive force of fixed electorde 6 by wire pattern 11, terminal 9, be formed at electromotive force on the semiconductor layer 2 and obtain part 8 and be formed at the conductive layer 23 that electromotive force obtains on the insulation course 20 on the part 8 and obtain.
Illustrate that with reference to Fig. 6 electromotive force obtains the structure of part 8 below.Fig. 6 (a) is the zoomed-in view that electromotive force is obtained part 8, and Fig. 6 (b) is the cross section view of cutting open along the line C-C among Fig. 6 (a), and Fig. 6 (c) is the cross section view that is presented at insulation course 20 and semiconductor layer 2 state before being connected to each other.
Electromotive force is obtained part 8 by being formed at the gap 10 in the semiconductor layer 2 and being formed at the other parts insulation of recess 22 and the semiconductor layer 2 of for example movable electrode 5 and frame part 7 in semiconductor layer 2 or the insulation course 21.Electromotive force is obtained pad (pad) part 8a that part 8 comprises basic cylindricality and the base 8b of the Bao Hechang that extends along the short side of frame part 7 from pad portion 8a, and the recess 26 with flat basal surface 8C is formed in the part of base 8b of corresponding terminal 9.Bed course 27 (for example, silicon dioxide (SiO
2)) be formed on the basal surface 8C, the conducting stratum 28 that has roughly same height is formed at the position of contiguous bed course 27, and sees that from the top contact portion 12 with stairstepping upper surface from the upper surface of bed course 27 to conducting stratum 28 forms.The angle part 12a of frame-like is formed on the contact portion 12 continuously.At this moment, conducting stratum 28 and contact portion 12 can be used as the layer formation of being made by same conductive material (for example, aluminium alloy).
In the present embodiment, shown in Fig. 6 (c), each angle part 12a of contact portion 12 forms and makes it outstanding from the upper surface 2a of semiconductor layer 2 with height δ.Adopt this structure, if semiconductor layer 2 and insulation course 20 are bonded to each other, then terminal 9 compresses angle part 12a with plastic yield angle part 12a, thereby strengthens close order of contact, and angle part 12a (contact portion 12) and terminal 9 can contact with each other, and more easily set up conduction betwixt.
As shown in Figure 1, retainer 13 is arranged on the surface of big plate portion 5a and platelet part 5b in position, so that avoid movable electrode 5 and fixed electorde 6A and 6B to be in direct contact with one another (bump) and with the situation of its damage.If retainer 13 and bed course 27 by same material, are then compared with the situation that it forms respectively, can reduce labour productive forces and production cost in identical step.
Secondly, with reference to stress regulon 30,30A and the 30B of Fig. 7 explanation on the end that vertically is arranged on beam part 4 and 4.
Fig. 7 (a) is the plan view according to the stress regulon 30 of present embodiment.In this example, the framed structure 31 that is seen as rectangular shape from the top is arranged on the end on the side of coupling part 5C that beam part 4 is connected to movable electrode 5.More specifically, from the top, comprise the short side part 32 that forms along the bearing of trend of beam part 4 and be arranged on continuously on the 5C of coupling part, and the end of beam part 4 vertically is connected to the core of framed structure 31 at it in the framed structure 31 that intersects for the Bao Hechang of the long side part 33 of the direction extension at right angle with bearing of trend.The end of coupling part 5C is integrally formed on the long side part 33, and the height of framed structure 31 is identical with the height of beam part 4.Adopt this structure, the situation that is directly connected to coupling part 5C with beam part 4 is compared, and can increase the zone of bending when movable electrode 5 moves.Therefore, can be adjusted in the concentration of local of the stress at angle (root portion) 4b of place and 5d place.
Framed structure 31 forms thin and long in the direction perpendicular to the bearing of trend of beam part 4.Therefore, when beam part 4 was twisted around its outrigger shaft, big beaming limit (margin) was obtained at its long side part 33 places, and this is effective.
Fig. 7 (b) is the stress regulon 30A according to the improved procedure of present embodiment.In this example, the framed structure 31 that the structure that shows with Fig. 7 (a) is same and 31 the bearing of trend of beam part 4 with many rows (in this example, be two rows) be provided with, and framed structure 31 and 31 is connected to each other by the web member on the extension that is arranged on beam part 4 34.In this example, because framed structure 31 is with layer setting, so, compare with the example of Fig. 7 (a), can more effectively regulate stress.
Fig. 7 (c) is the stress regulon 30B according to another improved procedure of present embodiment.In this example, be provided with its central sill part 4 extend perpendicular to it square with predetermined width to the folded curved structure 35 repeatedly of inflection.If curved structure 35 is set, then compare with the situation that beam part 4 is directly connected to coupling part 5C, increased the zone that when movable electrode 5 moves, is bent, so, can be adjusted in the concentration of local of the stress at angle (root portion) 4b of place and 5d place.
In any example, stress regulon 30,30A and 30B are arranged on the end 4b of beam part 4 of its side that is connected to movable electrode 5 (the coupling part 5C of movable electrode 5), but stress regulon 30,30A and 30B also can be arranged on the other end of beam part 4, promptly, be connected on the end 4a of beam part 4 of a side of bearing part 3 at it, and can in the 4a of end, obtain same effect.If stress regulon 30,30A and 30B vertically are arranged on two ends of beam part 4 at it, then can further be reduced in the stress that produces in the beam part 4.Different stress regulon 30,30A and 30B can be arranged on the two ends, maybe can form its array configuration.
From the above description can be clear, according to sensor 1, be connected to the end 4a of beam part 4 of bearing part 3 and one of the end 4b that is connected to the beam part 4 of movable electrode 5 at least and be provided with stress regulon 30,30A and the 30B that regulates stress as the first embodiment of the present invention.Therefore, it can reduce in the beam part 4 stress that produces, and strengthening permanance, and increases the setting dirigibility of the specification of the displacement of movable electrode 5 for example and weight.If stress regulon 30,30A and 30B are arranged on the end 4a of the beam part 4 that is connected to bearing part 3 and are connected on the end 4b of beam part 4 of movable electrode 5, then can further reduce stress.
At this moment, stress regulon 30,30A and 30B can be used as a framed structure 31 and form easily, or comprise the structure of multistory frame structure 31 or curved structure 35.Particularly, when beam part 4 is used as torsion beam, if stress regulon 30,30A and 30B form as a framed structure 31 as the example of present embodiment, the framed structure 31 that many layers are perhaps arranged, or as curved structure 35, then can be made as relative longlyer, can more effectively reduce the amount of bow and the stress of the per unit length of beam part 4 (and stress regulon 30,30A and 30B) with its part of axial right angle intersection.
In the present embodiment, the section of beam part 4 forms the essentially rectangular shape.Adopt this structure, then define beam part 4 and be easy to crooked direction and beam part 4 unbending directions, movable electrode 5 is operated in the mode of expectation, and has suppressed because the inconvenience that operation causes under undesired pattern.Particularly, when movable electrode 5 swing and beam part 4 form as the torsion beam in the present embodiment, on the shape of cross section perpendicular to the beam part 4 of outrigger shaft, sensor 1 is set at longer than the length (width W) on the direction of extending along the surface of sensor 1 in the length (height h) of thickness direction.Adopt this structure, whole movable electrode 5 is in thickness direction (vertical direction in Fig. 2) bending of sensor 1, and big plate portion 5a and platelet part 5b both can suppress the variation of accuracy of detection near fixed electorde 6A and 6B.
Though beam is as torsion beam in the present embodiment, the present invention also can be applied to the situation that beam is a bent beam, and the present invention also can be used for the situation of beam that spiral for example twines the different shape of shape and collapsed shape.The specification of framed structure and curved structure (for example, the quantity of the layer of framed structure, the folding times of curved structure, the size and dimension of various piece) can differently be out of shape.Shown in Fig. 8 (b), framed structure can from above be triangular shaped (for example, the triangle or two equilateral triangles of rule) when watching, or triangular shaped unit framework can be overlapped with the form of bundle be many layers.According to this structure, compare with the structure that is seen as rectangular shape from the top, can further reduce stress and concentrate.
[second embodiment]
Be with the difference of first embodiment on the structure of sensor 1 that as the sensor 1 of the second embodiment of the present invention beam part 4 and 4 does not have to be provided with stress regulon 30 as shown in Figure 9 in end longitudinally.In a second embodiment, shown in Figure 10 (a), semiconductor layer 2 is attached to insulation course 20, and before gap 10 formed, recess 22 formed by for example various etching processing technologys of wet etching and dry etching.After by etching cutting semiconductor layer 2, connects as Figure 10 (b) shown in as the insulation course 20 of glass substrate, carry out vertical etching and process, thus the gap 10 of formation shown in Figure 10 (c).After recess 22 formed by the etching processing technology, retainer 13 was formed by oxide film or aluminium alloy.
By etching in this way is the semiconductor layer 2 of monocrystalline silicon substrate, is pre-formed recess 22, and it is relative with the insulation course 20 that becomes supporting substrate and combine with it to form the surface of recess 22.Adopt this structure, the etching residue that produces owing to etching operation can take out in fabulous mode, so, can prevent from also can strengthen the quality of sensor 1 by the swing of movable electrode 5 and the adhesion of insulation course 20.
Because semiconductor layer 2 has been pre-formed recess 22, so, for example the insulated substrate of glass substrate can be as becoming the insulation course 20 of supporting substrate, can reduce the stray capacitance that produces by with the same silicon making substrate of movable electrode 5 rather than insulated substrate the time when using.
In addition, the advantage that has be the recess 22 that forms by etching can be only the etchant resist pattern of shape by forming corresponding recess 22, and the etching time of setting the degree of depth of corresponding recess 22 easily forms.Because glass substrate can be used as insulation course 20 and uses, so the twisting motion of the beam part 4 that the swing by the movable electrode 5 made by the monocrystalline silicon that becomes specular surface causes can be used as the reflection visual identity of light, therefore, can observe outward appearance easily.
If recess 22 utilizes character that etching speed depends on crystallographic direction to be formed by the anisotropic etching of crystal, then the manipulation of etching processing becomes easily.Therefore, can form the gap 25a and the 25b in remarkable high-precision test gap with very little variation.
Figure 11 has shown when recess 22 passes through the anisotropic etching formation of crystal, the state of the semiconductor layer 2 that the line A-A from Fig. 9 cuts open.As be presented at shown in the regional P among Figure 11, the plane of bearing part 3 and frame part 7 becomes the flat orientation of predetermined angle of crystrallographic plane of the monocrystalline silicon substrate of relative cutting.
Simultaneously, obtain in the part 8 at the electromotive force that utilizes Fig. 6 to illustrate, the recess 26 that has by flat bottom surface 8C that base 8b otch is formed is formed by crystalline anisotropy's etching when recess 22 forms.Obtain in the part 8 at the electromotive force of the electromotive force of obtaining fixed electorde, need accurately form recess 26, to guarantee reliable contact and the conduction between terminal 9 and the contact portion 12.Therefore, if recess 26 then can accurately form the recess 26 with little variation by being formed by crystalline anisotropy's etching when recess 22 forms.
The bearing part 3 of sensor 1, beam part 4 and movable electrode 5 can be formed by the SOI (silicon on insulated substrate) of double structure, and wherein SOI inserts as the intermediate oxidation film between silicon supporting substrate 41 and the silicon active layer 43 42.Figure 12 is the cross section view of the B-B xsect among corresponding Fig. 9.
When using SOI substrate 40, gap 10 at first forms shown in Figure 12 (a) by vertical etching processing, and middle oxide film 42 is removed by the sacrifice layer etching shown in Figure 12 (b), thereby forms recess 22.That is to say silicon active layer 43 corresponding semiconductor layers 2.When using SOI substrate 40, owing to can omit a step that is used for semiconductor layer 2 is attached to another substrate, so the advantage that has is to form capacitance type sensor easily.
Simultaneously, because recess 22 forms by the sacrifice layer etching, so, when semiconductor layer 2 forms by monocrystalline silicon substrate, compare by the preformed situation of etching before being attached to the insulation course 20 of glass substrate for example with recess 22, the possibility that the amount of etching residue increases is very high.In addition, because insulation course 20 can not be a glass substrate, so, can not obtain above effect.
Because beam part 4 is included in the long xsect of the thickness direction of sensor 1 (perpendicular to the xsect of the outrigger shaft of beam part 4), so beam part 4 is not easy bending.Beam part 4 is the beam of constant rectangle (essentially rectangular) with xsect as shown in Figure 4, and need to make along the thickness of the beam part 4 of the thickness direction of semiconductor layer 2 be 10 μ m or more.The lower limit 10 μ m of thickness h are according to 3 μ m or above calculating, described 3 μ m or above be distance between the overall detector gap of above-mentioned detector gap.Distance setting between detector gap is 3 μ m or more for a long time, needs the predetermined displacement of mobile movable electrode 5, to guarantee sensitivity according to the ability of the value that detects by sensor 1 being carried out the signal processing circuit of signal Processing.
Therefore, the thickness of movable electrode 5, that is, the thickness setting of beam part 4 is 10 μ m or more, it is about three times of 3 μ m of the minor increment between the detector gap.Adopt this structure, can guarantee to be used for the quality of displacement movable electrode 5 enough distances with the sensitivity of acquisition needs.The upper limit of the thickness of movable electrode 5, that is, the thickness of beam part 4 can be 500 μ m according to the thickness setting of the monocrystalline silicon substrate that forms semiconductor layer 2.
The thickness h that is presented at the beam part 4 among Fig. 4 is 3.16 times of width W of beam part 4 or more.For example, when movable electrode 5 passed through according to 4 displacements normally of normal acceleration torsion beam part, even movable electrode 5 contacts with 21 with insulation course 20, the way of contact also was line contact or some contact.Yet when increasing excessive acceleration, movable electrode 5 keeps surface level simultaneously in the Z-direction displacement, and movable electrode 5 contact with insulation course 20 and 21 surfaces as shown in figure 13, and has the possibility of adhesion appearance.In order to prevent movable electrode 5 promptly,, need to reduce the pattern of wherein in fact not reversing and promoting in the vertical direction displacement in Z-direction.
More specifically, if beam part 4 the bending of vertical direction be set at beam part 4 bending in the horizontal direction 1/10 or littler, then can significantly reduce the pattern that in fact its central sill part 4 is not reversed and promoted.Therefore, calculating is based on the maximum deflection of xsect second moment, if and the thickness h of beam part 4 be defined as making beam part 4 the bending of vertical direction become beam part 4 bending in the horizontal direction 1/10 or littler, the thickness h that then needs beam part 4 be beam part 4 width W 3.16 (≈ 10
1/2) doubly or more.
Adopt this structure, can significantly reduce the pattern that in fact its central sill part 4 is not reversed and promoted.Therefore, movable electrode 5 and insulation course 20 and 21 surfaces contacts, and movable electrode 5 can center on beam part 4 according to physical values and reverse admirably, and do not cause adhesion (sticking).
As shown in figure 14, fixed electorde 6A and 6B are not arranged so that it with respect to beam part 4 (as the axis of symmetry) vertical symmetry for the center of the twisting motion of movable electrode 5, but are arranged so that fixed electorde 6A and 6B are towards the platelet part 5b of movable electrode 5 skew.
Figure 15 (a) and Figure 15 (b) shown when when the direction of arrow L shown in Figure 14 is watched sensor 1, before or after acceleration G increases below the vertical direction, and the state of the off-centring of twisting motion.Should consider that because movable electrode 5 plays the effect of quality, that is, big plate portion 5a and platelet part 5b are asymmetrically formed with respect to the beam part 4 that is the center of twisting motion, cause the wherein phenomenon of centre of twist skew.
Consider the side-play amount of the centres of twist with respect to the beam part 4 symmetrically arranged states of as a reference axis of symmetry according to fixed electorde 6A and 6B, shown in Figure 15 (a), fixed electorde 6A and fixed electorde 6B are arranged on the lower surface 20b of insulation course 20, make fixed electorde 6A in direction, and fixed electorde 6B is in the direction away from beam part 4 near beam part 4.At this moment, the side-play amount of fixed electorde 6A and 6B, that is, fixed electorde 6A and the 6B installation site on the lower surface 20b of insulation course 20 is determined according to the sensing range of the acceleration that guarantees by sensor 1.
If the position of fixed electorde 6A and 6B determines that according to the center of the twisting motion of the movable electrode 5 that changes then the linearity owing to the electric capacity that detects according to the physical values that increases strengthens, and can accurately detect physical values when increasing physical values.
In addition, if increase fixed electorde 6 and be arranged on relative area between the movable electrode 5 on the insulation course 20, then can increase the detection sensitivity of the physical values that detects by sensor 1.Therefore, do not form along the cardboard shape of the long side extension of the big plate portion 5a of movable electrode 5 as Figure 16 (a) shown in and platelet part 5b, but on fixed electorde 6A and 6B be formed at lower surface 20b with respect to the insulation course 20 of big plate portion 5a and platelet part 5b along the shape in gap 10, avoid being provided for forming the gap 10 of bearing part 3 and beam part 4 simultaneously, thereby increased relative area.Adopt this structure, because the relative area with respect to movable electrode 5 that limits by fixed electorde 6A and 6B can guarantee to be the limit, so, can utilize extraordinary sensitivity to detect the physical values that is increased to sensor 1.
As mentioned above, sensor 1 as shown in this embodiment is the semiconductor layer 2 of monocrystalline silicon substrate by vertical etching, forms the travel mechanism of movable electrode 5, and travel mechanism comprises bearing part 3, beam part 4 and movable electrode 5.Therefore, movable electrode 5 can utilize fully thick semiconductor layer 2 to form.
Adopt this structure, owing to can fully guarantee the quality of movable electrode 5, so movable electrode 5 is according to physical values displacement significantly.Therefore, can strengthen the detection sensitivity of electric capacity.Because the displacement of movable electrode 5 is big, so, the width detection gap can be guaranteed.Therefore, can prevent from movable electrode 5 and be provided with to produce adhesion between the insulation course 20 of fixed electorde 6.
Owing to the vertical etching of being undertaken, so the finished surface that is formed with semiconductor layer 2 is not taper, can reduce device size by etching device with ICP.In addition, because finished surface is not taper, so even beam part 4 and movable electrode 5 are because excessive physical values causes and contacts with each other, it is cracked to prevent that also structure from becoming.In addition, because vertical etching surface is not a minute surface, so, even contact can not produce adhesion yet.
When carrying out vertical etching because the cross sectional shape of etched portions be vertical symmetry substantially, therefore, can prevent with respect to for the detection side to main shaft to other axially generation sensitivity.Because the sensor 1 as present embodiment has as the semiconductor layer with monocrystalline silicon substrate of little membrane stress, so, can realize process easily.
[the 3rd embodiment]
Secondly, with reference to Figure 17 and Figure 18 explanation structure as the sensor 1 of the third embodiment of the present invention.Except the sensor 1 shown in the 3rd embodiment can detect to the physical values of the horizontal direction of the in-plane of semiconductor layer 2, the sensor 1 shown in the 3rd embodiment is with to detect the sensor 1 that shows for second embodiment at the physical values of the vertical direction of the thickness direction of semiconductor layer 2 identical.
Figure 17 is the plan view that shows the semiconductor layer 2 of sensor 1.As shown in figure 17, semiconductor layer 2 comprises: form in semiconductor substrate that the horizontal direction detecting unit 50B that detects physical values at the vertical direction detecting unit 50A of the physical values of vertical direction, is in the horizontal direction detected in gap 10 and around the frame part 7 of these unit by known processing technology.Because vertical direction detecting unit 50A is identical with sensor 1, so, if desired, can suitably illustrate, and can omit its specific description.
The same with the gap 10 of the sensor 1 of second embodiment, by reactive ion etching etching gap 10 vertically, form gap 10 so that the sidewall surfaces in gap 10 perpendicular to the surface of semiconductor layer 2.The sidewall surfaces in the gap 10 that forms by vertical etching substantially in parallel with each other toward each other.As reactive ion etching, can utilize ICP processing by etching device with inductively coupled plasma (ICP).
As shown in figure 17, the semiconductor layer 2 of horizontal direction detecting unit 50B is formed with support unit 53, beam part 54, movable electrode 55 and fixed electorde 56.
Figure 18 shows that sensor 1 is cut into the cut-open view that cuts the state of semiconductor layer 2 along the line D-D of Figure 17.As shown in figure 18, form sensor 1 by anode in conjunction with the preceding and rear surface that for example insulation course 20 and 21 of glass substrate is attached to semiconductor layer 2.Form in the mating surface of shallow relatively recess 62 between semiconductor layer 2 and insulation course 20 and 21, guarantee the insulating property (properties) of semiconductor layer 2 and the conveniently moving of movable electrode 55.In the second embodiment of the present invention, for the semiconductor layer 2 of horizontal direction detecting unit 50B and the mating surface between the insulation course 20, recess 62 is arranged on semiconductor layer 2 one sides, and for the semiconductor layer 2 of horizontal direction detecting unit 50B and the mating surface between the insulation course 21, recess 62 is arranged on insulation course 21 1 sides.
As shown in figure 17, a pair of support unit 53 is arranged on by movable electrode 55 on each of a side of long side of movable electrode 55, and support unit 53 extends substantially invariable width along the long side of movable electrode 55.In this way one of the paired support unit 53 of She Zhiing thinner and long than another.
Each support unit 53 all is provided with two beam parts 54.Beam part 54 is parallel to the long side of support unit 53 extends, and for example folding circuitously and extension towards the center of the center section of beam part 54.As shown in figure 17, the other end of beam part 4 is connected to the bight of movable electrode 55, and plays the effect that relative support unit 53 flexibly movably supports the spring part of movable electrode.
Adopt this structure, horizontal direction detecting unit 50B plays by being connected to as the effect of the mass member of support unit 53 supports of the beam part 54 of the spring part of movable electrode 55 relatively.These spring parts and mass member are formed spring-quality system.By the position displacement as the movable electrode 55 of mass elements, horizontal direction detecting unit 50B detects the variation in the electric capacity between movable electrode 55 and fixed electorde 56.Horizontal direction detecting unit 50B can change the voltage waveform that obtains from the C-V conversion by the electric capacity that detects, detects the acceleration that is increased to sensor 1.
More specifically, changes in capacitance by detecting unit 58A and 58B (when common name, it is called detecting unit 58) detect, detecting unit 58 comprises that a plurality of pectinations that are formed on movable electrode 55 and the fixed electorde 56 detect movable electrode 55a and detect fixed electorde 56a.
If acceleration is fixed in the Y direction shown in Figure 17, then movable electrode 5 is in the Y direction displacement, and at the detection movable electrode 55a by detecting unit 58B with detect electric capacity that fixed electorde 56a detects and the detection movable electrode 55a by detecting unit 58B and detect between the electric capacity that fixed electorde 56a detects and produce difference.Acceleration in Y direction can detect from the difference of electric capacity.
Through hole 24 is sandblasted and is formed in the 56b of the angle of fixed electorde shown in Figure 17 56.Through hole 24 passes insulation course 20.Metallic films etc. are formed by the semiconductor layer 2 that the surperficial 20a of interior perimeter surface by through hole 24, through hole 24 and insulation course 20 exposes, and make the electromotive force of fixed electorde 56 to obtain on insulation course 20.The surface of preferred insulation course 20 resin bed (not shown) coating (molded).
The electromotive force of movable electrode 55 is obtained from the support unit 53 that supports movable electrode 55 by beam part 54.The support unit 53 that is arranged on the upside that is presented at the movable electrode 55 that moves among Figure 17 is sandblasted, and is formed with the through hole that for example passes insulation course 20.Metallic films etc. are formed by the semiconductor layer 2 that the surperficial 20a of interior perimeter surface by through hole 24, through hole 24 and insulation course 20 exposes, and make the electromotive force of movable electrode 55 to obtain on insulation course 20.
Secondly, will utilize the amplification plan view of movable electrode 55 and fixed electorde 56, the concrete structure of detecting units 58 is described according to the detecting unit 58 of the horizontal direction detecting unit 50B that shows among Figure 19.
As shown in figure 19, movable electrode 55 is formed with the detection movable electrode 55a of the Bao Hechang that is basically perpendicular to the band shape of extending towards the side of the electrode supporting unit of fixed electorde 56 56C from the core of movable electrode 55.Movable electrode 55a with the form of pectination with predetermined spacing formation parallel to each other.Detect movable electrode 55a and be arranged so that its tip is parallel to each other, and the tip has same length.
Fixed electorde 56 is formed with the detection fixed electorde 56a that is parallel to the Bao Hechang of a plurality of band shapes that detect movable electrode 55a extension from electrode supporting unit 56C towards the core of movable electrode 55.Detect fixed electorde 56a with the form of pectination with predetermined spacing (with the same spacing that for example detects movable electrode 55a) formation parallel to each other, so that parallel to each other relative with detection movable electrode 55a with man-to-man relation.Detect fixed electorde 56a and be set to for example correspondence detection movable electrode 55a, the feasible relative area that detects the surfaces opposite to each other of movable electrode 55a and detection fixed electorde 56a can guarantee big as much as possible.
As shown in figure 19, be provided for forming the gap 10 of detecting movable electrode 55a and detection fixed electorde 56a and have a narrow side clearance 10a and another wide side clearance 10b.Detecting unit 58 detects the electric capacity between movable electrode 55a and the detection fixed electorde 56a, and wherein narrow side clearance 10a is detector gap (electrode gap).
As shown in figure 17, the retainer 13 identical with retainer on the movable electrode 5 that is arranged on vertical direction detecting unit 50A is arranged on the lip-deep appropriate position of movable electrode 55, and this has been avoided movable electrode 55 and insulation course 20 directly to contact the situation that (bump) and insulation course 20 damage.If retainer 13 by obtaining the same material of bed course 27 of part 8 with electromotive force, is then compared with the situation that it forms respectively, can reduce labour productive forces and production cost in identical production stage.
As utilize the explanation of Figure 17, among the detecting unit 50B, the mating surface between semiconductor layer 2 and insulation course 20 is provided with the recess 42 in semiconductor layer 2 one sides in the horizontal direction.Recess 42 is attached to insulation course 20 with semiconductor layer 2, and before gap 10 formed, recess 42 was processed to form by for example various etchings of wet etching and dry etching.When recess 52 was processed 2 formation of cutting semiconductor layer by etching in this way, combined as the insulation course 20 of glass substrate, it was vertical etching, thereby forms gap 10.
At this moment, as shown in figure 18, be formed with the thickness h 1 of bearing part 3, beam part 4 and the semiconductor layer 2 of the movable electrode 5 of vertical direction detecting unit 50A and be formed with beam part 54, movable electrode 54 is identical with the thickness h 2 of the semiconductor layer 2 of the fixed electorde 56 of horizontal direction detecting unit 50B.If thickness h 1 is identical with thickness h 2, the step that then is used to form recess 62 can form in same step with the step that is used to form the recess 22 that limits the detector gap among the vertical direction detecting unit 50A.If thickness h 1 is identical with thickness h 2, then during the vertical etching processing when gap 10 forms, penetrates etch amount and can keep constant.Therefore, etching time becomes identical, and can prevent overetch.
Penetrate the width w1 in the gap 10 of the beam part 4 that forms vertical direction detecting unit 50A shown in Figure 17, identical with width w2 as the gap 10a of the detector gap of the detecting unit 58 of the horizontal direction detecting unit 50B that shows among Figure 16.If the width w2 of the width w1 in gap 10 and gap 10a is identical, then adding the etching speed in man-hour in vertical etching can homogenising.Therefore, can suppress greatly when the variation of processing the shape of the various piece that forms after the etching processing of carrying out by vertical etching.
Particularly, because the beam part 4 of vertical direction detecting unit 50A causes twisting motion, so, the sensitivity that the variable effect of the width of beam part 4 detects.If the width w2 of the width w1 in gap 10 and gap 10a is identical, and the variation of shape reduces, and then can strengthen the detection sensitivity of vertical direction detecting unit 50A.
In addition, be presented at the width w3 of beam part 4 of the vertical direction detecting unit 50A among Figure 18 and the width w4 of the beam part 54 of horizontal direction detecting unit 50B and be set at identical value.If the width w4 of the width w3 of beam part 4 and beam part 54 is identical, then when carrying out vertical etching, overtreating etching easily.In addition, if the width w4 of the width w3 of beam part 4 and beam part 54 is identical, then the outward appearance of the image recognition of the device that carries out after semiconductor machining is finished detects and becomes easy.
The sensor 1 that shows as the 3rd embodiment can have structure as shown in figure 20.Be presented at the movable electrode 5 that sensor 1 among Figure 20 has vertical direction detecting unit 50A, it has the frame-like shape around horizontal direction detecting unit 50B.More specifically, the big plate portion 5a size of movable electrode 5 is dwindled, and its quality reduces, and horizontal direction detecting unit 50B be connected part 5e around, coupling part 5e connects two arm portion 5d and the 5d extend parallel to each other, and the electrode supporting unit 56C of the fixed electorde 56 of the big plate portion 5a along continuous straight runs detecting unit 50B that described two arm portion 5d and 5d dwindle from size vertically extends parallel to each other.
If movable electrode for example forms around horizontal direction detecting unit 50B, then moment of inertia can obtain by arm portion 5d and coupling part 5e, and coupling part 5e is away from the mass component as the beam part 4 at the center of twisting motion.Therefore, even big plate portion 5a size is dwindled to reduce quality, also can strengthen the sensitivity of detection.In addition because vertical direction detecting unit 50A and horizontal direction detecting unit 50B can be set effectively, so, the advantage that has be sensor 2 can make less.
According to the sensor 1 that shows as the third embodiment of the present invention, detection forms by the same semiconductor layer 2 of vertical etching with the horizontal direction detecting unit 50B of detection at the physical values of the in-plane of semiconductor layer 2 at the vertical direction detecting unit 50A of the physical values of the thickness direction of semiconductor layer 2.For example, detection is being set under the situation of the sensor of two sensors of an axial physical values and other axial physical values of being perpendicular to one another, in the right angle precision between two axles because position deviation and the drift variation during in actual installation, yet, according to the sensor 1 that shows as the third embodiment of the present invention, owing to can accurately guarantee to detect the right angle precision of axle, so two physical values can accurately detect.
In addition, vertical direction detecting unit 50A and horizontal direction detecting unit 50B can reduce process of manufacture by same being processed to form, can reduce production costs, and shape can make littler.In addition, be formed with the thickness h 1 of bearing part 3, beam part 4 and the semiconductor layer 2 of the movable electrode 5 of vertical direction detecting unit 50A and to be formed with horizontal direction detecting unit 50B, beam part 54, movable electrode 55 identical with the thickness h 2 of the semiconductor layer 2 of the fixed electorde 56 of horizontal direction detecting unit 50B.If for example the change of properties of the sensitivity of the vertical direction detecting unit 50A of the sensor 1 of Sheng Chaning and horizontal direction detecting unit 50B can determine that then silicon single crystal wafer itself has variation before the monocrystalline silicon substrate cutting.
Therefore, can grasp for example character of the variation of produce single crystal silicon wafer easily, and when in the production and processing at silicon single crystal wafer during the abnormal condition of appearance, can find abnormal condition fast and improve the quality by the performance of the sensor of producing 1.
If vertical direction detecting unit 50A and horizontal direction detecting unit 50B form as a whole, and its thickness is made as constant, then can guarantee whole weight balancing, even and the physical values of sensor vertical direction and horizontal direction, also can significantly reduce the drift of actual installation, therefore, can improve other sensitivity.
Should be noted that the foregoing description is an example of the present invention.Therefore, the present invention is not limited to embodiment, and can simultaneously, can wait according to design and make various changes, and not break away from technical scope of the present invention by not being that the embodiment of the foregoing description carries out.
Commercial Application
The present invention can be applied to detect pre-by detecting the electric capacity between fixed electrode and the movable electrode The capacitance type sensor of fixed physical values.
Claims (21)
1. capacitance type sensor, described capacitance type sensor comprise fixed electorde and by beam by the movable movable electrode that supports of the fixed part of semiconductor layer, wherein fixed electorde and movable electrode are toward each other, between fixed electorde and movable electrode, accompany the gap, thereby composition detecting unit, detect the electric capacity of the size that is fit to the gap, thereby detect predetermined physical values, wherein be connected to fixed part beam the end and be connected to and be provided with one of at least the stress regulon of regulating stress raisers in the end of beam of movable electrode.
2. capacitance type sensor according to claim 1, the described end that wherein is connected to the beam of fixed part is provided with described stress regulon with the described end that is connected to the beam of movable electrode.
3. capacitance type sensor according to claim 1 and 2, wherein the stress regulon comprises framed structure.
4. capacitance type sensor according to claim 1 and 2, wherein the stress regulon comprises curved structure.
5. according to any one described capacitance type sensor of claim 1 to 4, its central sill is the torsion beam with essentially rectangular xsect, and described rectangular cross section reverses when movable electrode moves.
6. capacitance type sensor according to claim 5, wherein movable electrode is supported swingably by described torsion beam, and detecting unit detects and to be suitable at the surface of the movable electrode of swing and and the be relatively fixed electric capacity of size in the gap between the surface of electrode of the surface of movable electrode.
7. capacitance type sensor, described capacitance type sensor comprises by the beam part by movable first detecting unit that supports of the fixed part of semiconductor layer, make and keep asymmetric weight balancing, wherein according to first movable electrode that moves in the displacement of the physical values of the thickness direction of semiconductor layer, and be formed on the supporting substrate of support semiconductor layer first fixed electorde toward each other, between first movable electrode and first fixed electorde, accompany the gap, and first detecting unit detects described physical values based on the electric capacity according to the size detection of first movable electrode and first fixed electorde, described semiconductor layer is a monocrystalline silicon layer, and capacitance type sensor comprises the travel mechanism of first movable electrode, and the travel mechanism of described first movable electrode comprises fixed part, beam part and first movable electrode that forms by vertical etching single crystal silicon layer.
8. capacitance type sensor according to claim 7, further comprise be formed at supporting substrate on the relative zone of first fixed electorde, wherein in the surface of the semiconductor layer relative, form recess with supporting substrate.
9. capacitance type sensor according to claim 8, wherein said recess forms by crystalline anisotropy's etching.
10. capacitance type sensor according to claim 7 wherein utilizes to have SOI (silicon-on-insulator) substrate that the intermediate oxidation film is inserted in the structure between silicon supporting substrate and the silicon active layer, and described semiconductor layer is the silicon active layer of SOI substrate.
11. capacitance type sensor according to claim 7, the thickness of its central sill part is greater than the width of beam part.
12. capacitance type sensor according to claim 11, wherein the thickness of the thickness of first movable electrode and beam part is 10 μ m or more.
13. capacitance type sensor according to claim 11, the thickness of its central sill part are 3.16 times of width of the beam part or more.
14. capacitance type sensor according to claim 7, wherein first fixed electorde is relative with little plate portion independently, described little plate portion is the parts with little quality of first movable electrode, the parts of described little quality pass through the beam part as asymmetric mass balance, and, first fixed electorde is independently with relative as the big plate portion of the parts with big quality, first fixed electorde relative with little plate portion is set to partly separate with beam, and first fixed electorde relative with big plate portion is arranged on the supporting substrate, makes it near the beam part.
15. capacitance type sensor according to claim 7, wherein first fixed electorde is relative with little plate portion independently, described little plate portion is the parts with little quality of first movable electrode, the parts of described little quality pass through the beam part as asymmetric mass balance, and, first fixed electorde is independently with relative as the big plate portion of the parts with big quality, first fixed electorde is with fixed part and be provided for by the gap of vertical etching formation beam part not relative, first fixed electorde is formed on the supporting substrate, and the part of the fixed electorde of winning is extended along the shape in gap.
16. capacitance type sensor according to claim 7, further comprise second movable electrode and second fixed electorde, described second movable electrode movably supports by the fixed part of beam part by semiconductor layer, and displacement operation according to the physical values on the both direction of semiconductor layer, described second fixed electorde forms by semiconductor layer, wherein second movable electrode and second fixed electorde are by the gap toward each other, capacitance type sensor further comprises second detecting unit, and described second detecting unit detects physical values based on second movable electrode with electric capacity according to the size detection in the gap of relative second movable electrode.
17. capacitance type sensor according to claim 16, wherein the thickness of the semiconductor layer of the thickness of the semiconductor layer of first detecting unit and second detecting unit is equal substantially each other.
18. capacitance type sensor according to claim 16, wherein the thickness of the beam part of the thickness of the beam of first detecting unit part and second detecting unit is equal substantially each other.
19. capacitance type sensor according to claim 16, wherein the width of the beam part of the width of the beam of first detecting unit part and second detecting unit is equal substantially each other.
20. capacitance type sensor according to claim 16, wherein the gap that provides of the vertical etching processing of the beam part by being used to form first detecting unit, equate substantially each other with the gap that provides toward each other the time when second fixed electorde of second movable electrode and second detecting unit.
21. capacitance type sensor according to claim 16, wherein first movable electrode of first detecting unit has the shape around second detecting unit.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006126437A JP4600344B2 (en) | 2006-04-28 | 2006-04-28 | Capacitive sensor |
| JP2006126873A JP4605087B2 (en) | 2006-04-28 | 2006-04-28 | Capacitive sensor |
| JP126873/2006 | 2006-04-28 | ||
| JP126437/2006 | 2006-04-28 | ||
| PCT/JP2007/058960 WO2007125961A1 (en) | 2006-04-28 | 2007-04-25 | Capacitive sensor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101627849A Division CN102654409A (en) | 2006-04-28 | 2007-04-25 | Capacitive sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101432627A true CN101432627A (en) | 2009-05-13 |
| CN101432627B CN101432627B (en) | 2012-08-22 |
Family
ID=38768019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800154915A Active CN101432627B (en) | 2006-04-28 | 2007-04-25 | Capacitive sensor |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4605087B2 (en) |
| CN (1) | CN101432627B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101885465A (en) * | 2009-05-15 | 2010-11-17 | 精工爱普生株式会社 | MEMS sensor, electronic equipment |
| CN102667497A (en) * | 2009-11-24 | 2012-09-12 | 松下电器产业株式会社 | Acceleration sensor |
| CN104458828A (en) * | 2014-12-22 | 2015-03-25 | 中国科学院重庆绿色智能技术研究院 | Acetone gas sensory semiconductor sensor |
| CN106170056A (en) * | 2015-05-19 | 2016-11-30 | 佳能株式会社 | Shift detector, lens barrel and image pick-up device |
| US11137248B2 (en) | 2016-11-11 | 2021-10-05 | Sony Semiconductor Solutions Corporation | Sensor element, inertial sensor, and electronic apparatus |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008001442A1 (en) * | 2008-04-29 | 2009-11-05 | Robert Bosch Gmbh | Micromechanical component and method for operating a micromechanical component |
| US8020443B2 (en) * | 2008-10-30 | 2011-09-20 | Freescale Semiconductor, Inc. | Transducer with decoupled sensing in mutually orthogonal directions |
| JP5880877B2 (en) * | 2012-05-15 | 2016-03-09 | 株式会社デンソー | Sensor device |
| JP6002481B2 (en) * | 2012-07-06 | 2016-10-05 | 日立オートモティブシステムズ株式会社 | Inertial sensor |
| JP6155832B2 (en) | 2013-05-16 | 2017-07-05 | セイコーエプソン株式会社 | Sensor element, electronic device, and moving object |
| CN111825053B (en) * | 2020-07-03 | 2023-11-10 | 瑞声科技（南京）有限公司 | Capacitive system and preparation method thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH642461A5 (en) * | 1981-07-02 | 1984-04-13 | Centre Electron Horloger | ACCELEROMETER. |
| US5220835A (en) * | 1991-09-12 | 1993-06-22 | Ford Motor Company | Torsion beam accelerometer |
| JPH08178952A (en) * | 1994-12-20 | 1996-07-12 | Zexel Corp | Acceleration sensor |
| US5587518A (en) * | 1994-12-23 | 1996-12-24 | Ford Motor Company | Accelerometer with a combined self-test and ground electrode |
| WO1997004283A2 (en) * | 1995-07-20 | 1997-02-06 | Cornell Research Foundation, Inc. | Microfabricated torsional cantilevers for sensitive force detection |
| DE19541388A1 (en) * | 1995-11-07 | 1997-05-15 | Telefunken Microelectron | Micromechanical acceleration sensor |
| US5900550A (en) * | 1997-06-16 | 1999-05-04 | Ford Motor Company | Capacitive acceleration sensor |
| DE19750350C1 (en) * | 1997-11-13 | 1999-08-05 | Univ Dresden Tech | Three-dimensional chip acceleration sensor |
| US6000287A (en) * | 1998-08-28 | 1999-12-14 | Ford Motor Company | Capacitor center of area sensitivity in angular motion micro-electromechanical systems |
| JP2003014778A (en) * | 2001-04-26 | 2003-01-15 | Samsung Electronics Co Ltd | Vertical displacement measuring/driving structure and its fabricating method |
| US6845670B1 (en) * | 2003-07-08 | 2005-01-25 | Freescale Semiconductor, Inc. | Single proof mass, 3 axis MEMS transducer |
| US7146856B2 (en) * | 2004-06-07 | 2006-12-12 | Honeywell International, Inc. | Dynamically balanced capacitive pick-off accelerometer |
-
2006
- 2006-04-28 JP JP2006126873A patent/JP4605087B2/en active Active
-
2007
- 2007-04-25 CN CN2007800154915A patent/CN101432627B/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101885465A (en) * | 2009-05-15 | 2010-11-17 | 精工爱普生株式会社 | MEMS sensor, electronic equipment |
| CN102667497A (en) * | 2009-11-24 | 2012-09-12 | 松下电器产业株式会社 | Acceleration sensor |
| US9261530B2 (en) | 2009-11-24 | 2016-02-16 | Panasonic Intellectual Property Management Co., Ltd. | Acceleration sensor |
| US9702895B2 (en) | 2009-11-24 | 2017-07-11 | Panasonic Intellectual Property Management Co., Ltd. | Acceleration sensor |
| US10126322B2 (en) | 2009-11-24 | 2018-11-13 | Panasonic Intellectual Property Management Co., Ltd. | Acceleration sensor |
| CN104458828A (en) * | 2014-12-22 | 2015-03-25 | 中国科学院重庆绿色智能技术研究院 | Acetone gas sensory semiconductor sensor |
| CN106170056A (en) * | 2015-05-19 | 2016-11-30 | 佳能株式会社 | Shift detector, lens barrel and image pick-up device |
| US10274813B2 (en) | 2015-05-19 | 2019-04-30 | Canon Kabushiki Kaisha | Displacement detecting apparatus, lens barrel, and image pickup apparatus |
| CN106170056B (en) * | 2015-05-19 | 2020-10-27 | 佳能株式会社 | Displacement detection device, lens barrel, and image pickup device |
| US11137248B2 (en) | 2016-11-11 | 2021-10-05 | Sony Semiconductor Solutions Corporation | Sensor element, inertial sensor, and electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4605087B2 (en) | 2011-01-05 |
| CN101432627B (en) | 2012-08-22 |
| JP2007298410A (en) | 2007-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102654409A (en) | Capacitive sensor | |
| CN101432627B (en) | Capacitive sensor | |
| US7624638B2 (en) | Electrostatic capacitance type acceleration sensor | |
| US6928872B2 (en) | Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane | |
| JP5175308B2 (en) | Physical quantity sensor | |
| JP4705229B2 (en) | Micromachining rotational angular acceleration sensor | |
| JP3199775B2 (en) | Acceleration sensor | |
| JP4063057B2 (en) | Capacitive acceleration sensor | |
| US8104343B2 (en) | Vibrating micromechanical sensor of angular velocity | |
| CN102216789A (en) | Acceleration sensor | |
| KR100316774B1 (en) | Method for fabricating a micro inertia sensor | |
| CN111766404A (en) | Low-stress Z-axis MEMS accelerometer based on rigidity coupling | |
| CN107356785B (en) | MEMS torsion type accelerometer with flexible hinge structure | |
| CN104198762A (en) | Eight-beam symmetrical silicon micro-accelerometer | |
| US6122963A (en) | Electronic component for measuring acceleration | |
| CN110108267A (en) | Vibrating beam, vibrating beam preparation method and silicon micro gyroscope | |
| JP2009270944A (en) | Capacitance type acceleration sensor | |
| WO2009099124A1 (en) | Physical quantity sensor | |
| CN102539815B (en) | Bee poiser-based bionic three-dimensional angular velocity sensor | |
| US20230322548A1 (en) | Compact microelectromechanical angular rate sensor | |
| JP2006226924A (en) | Dynamic quantity sensor | |
| JP2010048785A (en) | Electrode substrate, and capacitance type acceleration sensor using it | |
| JPH06201724A (en) | Acceleration sensor | |
| JP2011095007A (en) | Electrostatic acceleration sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC WORKS LTD. Effective date: 20120223 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20120223 Address after: Osaka Japan Applicant after: Matsushita Electric Industrial Co., Ltd. Address before: Japan Osaka Applicant before: Matsushita Electric Works, Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |