CN101430472B - Active matrix device, method for manufacturing switching element, electro-optical display device, and electronic apparatus - Google Patents

Abstract

An active matrix device (10) includes: a substrate; a plurality of pixel electrodes (8) formed on one surface of the substrate (50); a switching element (1), including: a fixed electrode (3) formed so as to correspond to the pixel electrode and coupled with the pixel electrode; a movable electrode (5) formed so as to be displaced toward the fixed electrode along a surface direction of the substrate to be in one of states being in contact with the fixed electrode and apart from the fixed electrode; a driving electrode (2) formed so as to form an electrostatic gap between the movable electrode and the driving electrode, the fixed electrode (3), the movable electrode (5), and the driving electrode (2) being disposed in different positions from each other along the surface direction of the substrate (50); a first wiring line (11) coupled with the movable electrode; and a second wiring line (12) coupled with the driving electrode (2). The switching element generates an electrostatic attraction between the movable electrode and the driving electrode by applying a voltage between the movable electrode and the driving electrode so as to displace the movable electrode to be in contact with the fixed electrode for obtaining electrical conduction between the first wiring line and the pixel electrode.

Description

The manufacture method of active matrix apparatus, on-off element, electro-optical display device and electronic equipment

Technical field

The present invention relates to manufacture method, electro-optical display device and the electronic equipment of active matrix apparatus, on-off element.

Background technology

For example, at LCD panel (the liquid crystaldisplay: be provided with active matrix apparatus LCD) that adopts the driven with active matrix mode, this active matrix apparatus comprises: a plurality of pixel electrodes, with the on-off element of the corresponding setting of each pixel electrode and the distribution (for example, with reference to patent documentation 1) that connects each on-off element.

Generally, in the matrix arrangement of having chance with, TFT is used as on-off element.Though TFT has used a-Si film, p-Si film at its semiconductor layer, because they have photoconductivity, if light incident then produces light and leaks the off resistance that also might reduce TFT, the threshold value that changes TFT.

Leak the problem that causes for solving described light, the general method of covering that is provided with that adopts according to the light shield layers such as black matrix of the light of TFT, if but such light shield layer is set, then can reduce panel aperture opening ratio, reduce light quantity by panel.

Therefore, in the active matrix apparatus that in patent documentation 1, relates to (electro-optical display device base plate), use the on-off element of machinery to replace described TFT.Such mechanical switching element does not produce light and leaks.Therefore, there is no need to be provided with light shield layer, can increase aperture opening ratio.And the such flutter with temperature of TFT owing to not taking place, so have good switching characteristic in the on-off element of machinery.

The on-off element that patent documentation 1 is related is carried out electrode (actuator electrode) and is provided with opposed to each other with cantilever, by sending electricity to carrying out electrode, makes to carry out between electrode and the cantilever to produce electrostatic attraction, makes the cantilever displacement and contacts with pixel electrode.Based on this, can make between pixel electrode and the distribution and form conducting state.

But, in the related active matrix apparatus, though substrate is provided with each on-off element, because the included cantilever of each on-off element forms tabular and its plate face is parallel with the plate face of substrate, so taking of the area of the plate face of cantilever reduced aperture opening ratio.Therefore, the active matrix apparatus that relates to can not be given full play to the effect (aperture opening ratio raising) of using mechanical switching element to produce.

If for improving the area that aperture opening ratio reduces the plate face of cantilever, then cantilever can reduce with the opposed area of carrying out electrode thereupon, also reduced the electrostatic attraction that produces between them, so be necessary to strengthen the driving voltage of on-off element.

Patent documentation 1: TOHKEMY 2004-6782 communique

Summary of the invention

The object of the present invention is to provide and a kind ofly not only realize power saving but also can improve the active matrix apparatus of aperture opening ratio, manufacture method, electro-optical display device and the electronic equipment of on-off element more.

Such purpose is to finish by following the present invention.

Active matrix apparatus of the present invention comprises: a plurality of pixel electrodes are arranged on the face of substrate; On-off element, comprise: fixed electorde, be provided with corresponding to described each pixel electrode, and be connected with described pixel electrode, traveling electrode, be provided so that with respect to described fixed electorde contact/separately, and drive electrode with can changing the position, with respect to described traveling electrode across electrostatic gap be set up; First distribution is connected in described each traveling electrode; And second distribution, be connected in described each drive electrode, wherein, described each on-off element is constituted as, by making between described traveling electrode and the described drive electrode and produce electrostatic attraction to applying voltage between described traveling electrode and the described drive electrode, based on this, make described traveling electrode displacement, described traveling electrode is contacted with described fixed electorde, and make described first distribution and described pixel electrode become conducting state, described fixed electorde, described traveling electrode and described drive electrode are configured in along mutual different position on the direction of the plate face of described substrate, and described traveling electrode is to be configured along the mode to the displacement of described fixed electorde side on the direction of the plate face of described substrate.

Based on this, can provide the active matrix apparatus of not only realizing power saving but also can improving aperture opening ratio more.

In the active matrix apparatus of the present invention, preferred described fixed electorde, described traveling electrode and described drive electrode form lamellar respectively, and are set up with respect to the mode that the plate face of described substrate roughly becomes the right angle with its plate face.

Based on this, when overlooking substrate, can reduce very much traveling electrode, fixed electorde and drive electrode area separately.Its result can obtain very high aperture opening ratio.

In the active matrix apparatus of the present invention, preferred described fixed electorde, described traveling electrode and described drive electrode prolong respectively on the direction parallel with described first distribution or described second distribution and extend.

Based on this, when overlooking substrate, can reduce the area of on-off element and pixel electrode overlapping areas.Its result can improve aperture opening ratio.

In the active matrix apparatus of the present invention, preferred described traveling electrode constitutes by cantilever support so that its free end side displacement, described fixed electorde is configured to the own distolateral end of described traveling electrode opposed, and described drive electrode is configured to more closely more opposed with the fixing distolateral part of described traveling electrode than described fixed electorde.

Based on this, can make the formation of on-off element become simple structure.And, because drive electrode and traveling electrode is fixing distolateral opposed, so when traveling electrode was indexed to drive electrode side (flexural deformation), it was big to make traveling electrode return to the reacting force of previous status.Therefore, can positively prevent the adhesion of drive electrode and traveling electrode.

In the active matrix apparatus of the present invention, preferred described fixed electorde, described traveling electrode and described drive electrode are configured under the state that described traveling electrode and described drive electrode separate, and described traveling electrode contacts with described fixed electorde.

Based on this, can prevent the adhesion of traveling electrode and drive electrode.

In the active matrix apparatus of the present invention, preferably at least one face in the opposed faces of described traveling electrode and described fixed electorde, form projection so that stop described traveling electrode to contact with described drive electrode.

Based on this, under the state that traveling electrode and drive electrode separate, can be more really and traveling electrode is contacted with fixed electorde.

In the active matrix apparatus of the present invention, each all comprises the accommodation section that holds described traveling electrode, described drive electrode and described fixed electorde preferred described each on-off element, and this accommodation section forms airtight space.

Based on this, can prevent each one aging of on-off element.Its result can bring into play good switching characteristic for a long time.

In the active matrix apparatus of the present invention, preferred described a plurality of pixel electrodes are with respect to described a plurality of on-off elements, be set at positions different on the thickness direction of described substrate, described each pixel electrode is configured to comprise when overlooking corresponding described on-off element.

Based on this, aperture opening ratio is improved.

In the active matrix apparatus of the present invention, preferred described first distribution is set up a plurality of along described substrate in parallel to each other, described second distribution intersects with described each first distribution and is set up a plurality ofly along described substrate in parallel to each other, and described each on-off element is set near the intersection point of described each first distribution and described respectively second distribution.

Based on this, can corresponding be disposed a plurality of on-off elements by a plurality of pixel electrodes of rectangular configuration.

Manufacture method of the present invention is the manufacture method of the on-off element that comprises of active matrix apparatus of the present invention, comprising: the step that forms the end difference with wall vertical with the plate face of described substrate on a face of described substrate; On described wall, form the step of first electrode; Formation has the insulation course of insulativity to cover the step of described first electrode; On described insulation course, form second electrode so as described second electrode across the step of described insulation course and described first electrode contraposition; An and part of removing described insulation course, make between described first electrode and described second electrode and form electrostatic gap, and make described second electrode can contact/separate the step of such displacement with respect to described first electrode, wherein, described first electrode is described drive electrode, and described second electrode is described traveling electrode.

When forming drive electrode and traveling electrode by identical layer, there is the restriction based on line that the photolithograph method is formed and obtain or minimum widith at interval in distance between drive electrode and the traveling electrode, can only form an on-off element in its minimum widith.On the contrary, according to the manufacture method of on-off element of the present invention, the distance between drive electrode and the traveling electrode is not made the restriction of the formation of photolithograph method and line that obtains or minimum widith at interval, can form two on-off elements in its minimum widith.Therefore, when using on-off element of the present invention to form peripheral circuit etc., can dwindle its designed size.

And, can utilize the thickness of insulation course to come the size of the distance (being electrostatic gap) between regulation traveling electrode and the drive electrode.Therefore, can reduce electrostatic gap.Its result can reduce the driving voltage of on-off element, and, can reduce being provided with at interval of on-off element, improve the design freedom of active matrix apparatus.And, can stipulate the distance between traveling electrode and the drive electrode accurately, its result can realize stable switching characteristic.

Electro-optical display device of the present invention is characterized in that, comprises active matrix apparatus of the present invention.

Based on this, can not only realize power saving but also show high quality images.

Electronic equipment of the present invention is characterized in that, comprises electro-optical display device of the present invention.

Based on this, can not only realize power saving but also show high quality images.

Description of drawings

Fig. 1 is the planimetric map that shows the active matrix apparatus that first embodiment of the present invention relates to;

Fig. 2 is the A-A line sectional view among Fig. 1;

Fig. 3 is the amplification view that is used to illustrate the on-off element with the active matrix apparatus shown in Fig. 1;

Fig. 4 is the stereographic map that is used for the on-off element shown in the key diagram 3;

Fig. 5 is the figure that is used to illustrate the operation of on-off element shown in Figure 3;

Fig. 6 is the figure of manufacture method that is used to illustrate the active matrix apparatus of Figure 1 and Figure 2;

Fig. 7 is the figure of manufacture method that is used to illustrate the active matrix apparatus of Figure 1 and Figure 2;

Fig. 8 is the figure of manufacture method that is used to illustrate the active matrix apparatus of Figure 1 and Figure 2.

Fig. 9 shows the figure that the summary of the on-off element that has in the active matrix apparatus that second embodiment of the present invention relates to constitutes;

Figure 10 is the figure that is used for the manufacture method of the on-off element shown in the key diagram 9;

Figure 11 is the figure that is used for the manufacture method of the on-off element shown in the key diagram 9;

Figure 12 is the figure that is used for the manufacture method of the on-off element shown in the key diagram 9;

Figure 13 is the figure that illustrates as the phase inverter of an example of the application examples of the on-off element shown in Fig. 9;

Figure 14 is the longitudinal diagram that illustrates as the formation of the liquid crystal panel of an example of electro-optical display device of the present invention;

Figure 15 is the stereographic map that illustrates as the formation of the PC of the mobile model (or notebook type) of first example of electronic equipment of the present invention;

Figure 16 is the stereographic map that illustrates as the formation of the mobile phone (containing PHS) of second example of electronic equipment of the present invention;

Figure 17 is the stereographic map that illustrates as the formation of the digital camera of the 3rd example of electronic equipment of the present invention; And

Figure 18 for pattern figure as the optical system of the projection display device of the 4th example of electronic equipment of the present invention is shown.

Symbol description

1,1A on-off element 2, drive electrode

3, fixed electorde 41 first insulation courses

41A, 41B, the 41C first dielectric film 41D dielectric film

411 grooves, 412 ground floors

The 3rd layer of 413 second layer 414

413A insulation course 415,416 walls

417 openings 5,5A traveling electrode

51 stiff ends, 52 free ends

53 projection 53A tabular surfaces

6 conductive layers, 61,62,63 terminals

64 conductive films, 65 first electrode layers

65A first electrode 66 the second electrode lays

66A second electrode 71 second insulation courses

71A second dielectric film 72 the 3rd insulation course

72A the 3rd dielectric film 73 the 4th insulation course

73A the 4th dielectric film 8 pixel electrodes

111 through electrodes, 81,121 through electrode portions

82 through holes, 9 sealants

10 active matrix apparatus, 11 first distributions

12 second distributions 13,13A accommodation section

100 liquid crystal panels, 90 liquid crystal layers

60 alignment films, 50 substrates

40 alignment films, 209 nesa coatings

70 light polarizing film, 80 light polarizing film

201 micro lens substrates

206 have the substrate of micro lens with recess

205 recesses, 208 micro lens

202 top layers, 207 resin beds

20 liquid crystal panels are deceived matrixes with counter substrate 204

203 openings, 1100 PC

1102 keyboards, 1104 bodies

1106 display units, 1200 mobile phones

1202 action buttons, 1204 receivers

1206 microphones, 1300 digital cameras

1302 housings (body), 1304 light receiving units

1306 shutter release buttons, 1308 circuit substrates

1312 TV signal output end

1314 data communication output/input terminal

1430 TV monitor, 1440 PC

300 projection display devices, 301 light sources

302,303 integrator lens, 304,306,309 mirrors

305,307,308 dichronic mirrors, 310～314 collector lenses

320 screens, 200 optics chunks

210 colour splitting prisms, 211,212 dichroic mirror surfaces

213～215 216 exit facets

220 projecting lens, 230 display units

240,250,260 liquid crystal light valve L incident lights

Embodiment

Below, with reference to accompanying drawing, the manufacture method of active matrix apparatus of the present invention, electro-optical display device, on-off element and the preferred implementation of electronic equipment are described.

＜the first embodiment 〉

Fig. 1 is the planimetric map that shows the active matrix apparatus that first embodiment of the present invention relates to, Fig. 2 is the A-A line sectional view among Fig. 1, Fig. 3 is the amplification view that is used to illustrate the on-off element with the active matrix apparatus shown in Fig. 1, Fig. 4 is the stereographic map that is used for the on-off element shown in the key diagram 3, and Fig. 5 is the figure that is used to illustrate the operation of on-off element shown in Figure 3.In addition, in the following description, for convenience of explanation, the paper front side among Fig. 1 be " on ", paper is inboard for D score, right side be that " right side ", left side are " left side ", the upside among Fig. 2 and Fig. 4 be " on ", downside is that D score, right side are that " right side ", left side are " left side ".

(active matrix apparatus)

Active matrix apparatus 10 shown in Fig. 1 comprises: a plurality of first distributions 11, with these a plurality of first distributions 11 a plurality of second distributions 12 arranged in a crossed manner, be disposed near the intersection point of each first distribution 11 and each second distribution 12 a plurality of on-off elements 1 and with a plurality of pixel electrodes 8 of each on-off element 1 corresponding setting, they are set on the substrate 50.

Substrate 50 is for supporting the substrate (supporter) of each one (each layer) that constitutes active matrix apparatus 10.

For substrate 50, plastic base (resin substrate), quartz base plate, silicon substrate and the gallium arsenide substrate etc. that can use glass substrate for example, constitute by polyimide, polyethylene terephthalate (PET), PEN (PEN), polymethylmethacrylate (PMMA), polycarbonate (PC), polyethersulfone (PES), aromatic polyester (liquid crystal polymer) etc.

And according to differences such as its constituent materials, the average thickness of substrate 50 also has some differences, but is not limited thereto, and preferred about 10～2000 μ m are more preferably about 30～300 μ m.If the thickness of substrate 50 is too thin, then the intensity of substrate 50 reduces, and might damage its function as supporter, and is on the contrary, if the thickness of substrate 50 is too thick, not preferred from the angle of weight reduction.

A plurality of first distributions 11 are provided with in parallel to each other along substrate 50, and a plurality of second distributions 12 intersect with each first distribution 11, and are provided with in parallel to each other along substrate 50.

In the present embodiment, a plurality of first distributions 11 are arranged in mutually orthogonal mode with a plurality of second distributions 12.And a plurality of first distributions 11 are to be used for row to select (rowselection), and a plurality of second distributions 12 are to be used for column selection (column selection).That is, in first distribution 11 and second distribution 12, one as data line, and another is as sweep trace.Use so a plurality of first distributions 11 and a plurality of second distribution 12 to go and select and column selection, can optionally make on-off element 1 work (between traveling electrode 5 and drive electrode 2, applying voltage) that needs.

By near the intersection point of each first distribution 11 arranged like this and second distribution 12, each on-off element 1 being set, can dispose a plurality of on-off elements 1 accordingly with a plurality of pixel electrodes 8 of rectangular configuration.

Each first distribution 11 like this and the constituent material of second distribution 12, as long as have electric conductivity respectively, then not having particular determination, can be Pd, Pt, Au, W, Ta, Mo, Al, Cr, Ti, Cu or the conductive materials such as alloy that contain these, ITO, FTO, ATO,, SnO ₂Deng electroconductive oxide, material with carbon elements such as carbon black, carbon nano-tube, fullerene, and polyacetylene, polypyrrole, PEDOT (poly--the dioxoethyl thiophene) wait polythiophene, polyaniline, poly-(right-phenylene), gather in the conductive polymer materials such as fluorenes (polyfluorene), polycarbazole, many silicon or derivatives thereof one or more and be used in combination.In addition, above-mentioned conductive polymer material is usually at macromolecular materials such as doped ferric oxide, iodine, mineral acid, organic acid, polystyrolsulfon acids and be endowed under the state of electric conductivity and use.Wherein, as the constituent material of each first distribution 11 and second distribution 12, mainly be Al, Au, Cr, Ni, Cu, Pt or the alloy that contains them preferably respectively.If use these metal materials, utilize electrolysis or plated by electroless plating method, can be easily and form each first distribution 11 or each second distribution 12 at an easy rate.And, can improve the characteristic of active matrix apparatus 10.

As shown in Figure 2, in the present embodiment, the one side of substrate 50 (above) on, be provided with first insulation course 41 that is used to form on-off element 1 each one.

And, on this first insulation course 41, be provided with the terminal 61,62,63 that is used to connect each electrode of on-off element 1 described later, be provided with second insulation course 71 simultaneously to cover this terminal 61,62,63.

And, on this second insulation course 71, be provided with described a plurality of second distribution 12, be provided with the 3rd insulation course 72 simultaneously to cover this a plurality of second distributions 12.

And, on this 3rd insulation course 72, be provided with described a plurality of first distribution 11, be provided with the 4th insulation course 73 simultaneously to cover this a plurality of first distributions.

These insulation courses 41,71,72,73 are removed a part respectively, form the accommodation section (removing portion) 13 of the drive part that holds on-off element 1 described later.

And, on second insulation course 71, connect through electrode 111, the through electrode portion 81 that is used for splicing ear 62 and pixel electrode 8 that is used for the splicing ear 61 and first distribution 11, the through electrode portion 121 that is used for the splicing ear 63 and second distribution 12 respectively.

And, on the 3rd insulation course 72, connect the through electrode 111 that is used for the splicing ear 61 and first distribution 11, the through electrode portion 81 that is used for splicing ear 62 and pixel electrode 8 respectively.

And, on the 4th insulation course 73, connect the through electrode portion 81 that is used for splicing ear 62 and pixel electrode 8.

As the constituent material of such insulation course 41,71,72,73, for the material that has insulativity respectively gets final product, no particular determination can use various organic materials (particularly high-molecular organic material), various inorganic material.

As organic material with insulativity, can use polystyrene, polyimide, polyamidoimide, polyvinyl penylene (polyvinylphenylene), polycarbonate (PC), polymethylmethacrylate acryl resins such as (PMMA), fluorine-type resins such as polytetrafluoroethylene (PTFE), phenolic resins such as poly(4-hydroxystyrene) or phenolics, and a kind of in the olefin resins such as tygon, polypropylene, polyisobutylene and polybutylene or be used in combination two or more.

On the other hand, as inorganic material, can use silica (SiO with insulativity ₂), a kind of in the composite oxide of metal such as metal oxide, barium strontium, lead zirconate titanate such as silicon nitride, aluminium oxide, tantalum oxide or be used in combination two or more.

Each pixel electrode 8 is arranged on the face of described substrate 50, when using active matrix apparatus 10 to construct liquid crystal panel 100 described later, constitutes an electrode that applies the voltage that is used to drive each pixel.

In the present embodiment, when overlooking, in the zone that surrounds by two first distributions 11 that adjoin each other and interconnective two second distributions 12, be provided with pixel electrode 8.

Particularly, a plurality of pixel electrodes 8 corresponding to a plurality of on-off elements 1, be arranged on position different on the thickness direction of substrate 50 (top) and be provided with a plurality of pixel electrodes 8, when overlooking, each pixel electrode 8 is provided with to surround corresponding on-off element 1.Based on this, can increase the area of each pixel electrode 8 to greatest extent, aperture opening ratio is improved.

As the constituent material of pixel electrode 8, can select for example alloys such as metals such as Ni, Pd, Pt, Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc, Y, Yb, Ag, Cu, Co, Al, Cs and Rb, the MgAg that contains these, AlLi, CuLi, ITO (IndiumTin Oxide), SnO2, contain Sb SnO2, contain a kind of in the oxides such as ZnO etc. of Al or make up two or more uses.Particularly, when active matrix apparatus 10 is assembled into permeation type liquid crystal panel 100 described later,, in described material, select transparent material as the constituent material of pixel electrode 8.

And, the part of following (faces of substrate 50 sides) of each pixel electrode 8, constitute the part of the wall of described accommodation section 13, on each pixel electrode 8, form the through hole (not shown), supply with etching solution when this through hole is used to form accommodation section 13 in manufacturing step.Sealed layer 9 sealing of this through hole.

The constituent material of sealant 9, if have the function of the above-mentioned through hole of sealing, then do not have particular determination, can use various organic materials, various inorganic material, but the preferred macromolecular materials such as polyimide resin, polyamide-imide resin, polyvinyl alcohol (PVA), teflon that use.Based on this, can doublely do the light distribution membrane (lightdistribution film) in the aftermentioned liquid crystal panel 100.

Each pixel electrode 8 corresponding on-off elements that are provided with 1 are connected with such each pixel electrode 8 by above-mentioned terminal 62 and through electrode portion 81.By controlling the operation of this on-off element 1, on liquid crystal panel 100 described later, can control the driving of each pixel.

As shown in Figures 3 and 4, each on-off element 1 traveling electrode (switch plate) 5 of having the drive electrode 2 that is electrically connected with corresponding second distribution 12, the fixed electorde 3 that is electrically connected with corresponding pixel electrode 8 and being electrically connected with corresponding first distribution 11.

Below, explain each one that constitutes on-off element 1 successively.

Drive electrode 2 formation are lamellar, its plate face is the setting that almost forms the right angle with the plate face of substrate 50, form the L font when overlooking, and have along the part of first distribution, 11 extensions and the part of extending along second distribution.

And drive electrode 2 separates with substrate 50 and pixel electrode 8 respectively.In other words, drive electrode 2 respectively with the bottom of accommodation section 13 and above separate.

Such drive electrode 2 is provided with opposed to each other across electrostatic gap and traveling electrode described later 5.

This drive electrode 2 by to and traveling electrode 5 between apply voltage (make produce potential difference (PD)), make and traveling electrode 5 between (electrostatic gap) produce electrostatic attraction.

Such drive electrode 2 is electrically connected on second distribution 12 by described through electrode portion 121 and terminal 63.In the present embodiment, integrally form drive electrode 2 and terminal 63.

The constituent material of such drive electrode 2 if having electric conductivity, does not then have particular determination, for example can use and each above-mentioned first distribution 11 and the constituent material identical materials of second distribution 12.

And the thickness of drive electrode 2 does not all have particular determination, and preferred about 10～1000nm is more preferably about 50～500nm.

Fixed electorde 3 is the setting that almost forms the right angle with the plate face of substrate 50 for lamellar, its plate face, forms linearity when overlooking, and is provided with interval with described drive electrode 2.

And, fixed electorde 3 on the thickness direction of substrate 50, be arranged on almost with described drive electrode 2 same positions on.

This fixed electorde 3 by with the contacting of traveling electrode 5, be electrically connected with first distribution 11.

Such fixed electorde 3 is electrically connected on pixel electrode 8 by described terminal 62 and through electrode portion 81.

The constituent material of such fixed electorde 3 if having electric conductivity, does not then have particular determination, for example can use and each above-mentioned first distribution 11 and the constituent material identical materials of each second distribution 12.

And, the thickness of drive electrode 3, no particular determination, preferred about 10～1000nm is more preferably about 50～500nm.

Traveling electrode 5 is the setting that almost forms the right angle with the plate face of substrate 50 for lamellar, its plate face, mainly extends along second distribution 11 when overlooking, and is provided with opposed to each other with described drive electrode 2 and fixed electorde 3.

And, traveling electrode 5 on the thickness direction of substrate 50, be arranged on almost with described drive electrode 2 and fixed electorde 3 same positions on.

This traveling electrode 5 forms elongated shapes (that is, band shape), and is fixing and by cantilever support by the end (left-hand end among Fig. 3) 51 of first distribution, 11 sides on its length direction.Based on this, free end 52 sides of traveling electrode 5 can be to drive electrode 2 and fixed electorde 3 sides (downside) displacement.

And, at the leading section of traveling electrode 5, on promptly traveling electrode 5 and opposed part fixed electorde 3, form projection 53.

This projection 53 is formed for stoping contacting of traveling electrode 5 and drive electrode 2, constitutes to prevent traveling electrode 5 and the anti-stop element of the adhesion of drive electrode 2 adhesions.Based on this, under the state that traveling electrode 5 and drive electrode 2 separate, traveling electrode 5 can contact fixed electorde 3.

Like this, traveling electrode 5 is set to position changeable so that contact/separate with fixed electorde 3.

The constituent material of such traveling electrode 5, if have electric conductivity and elastically deformable, then there is not particular determination, for example can be monocrystalline silicon, polysilicon, amorphous silicon and silit silicon materials such as (silicon and carbide), metal material such as stainless steel, titanium and aluminium or these each materials a kind of or make up two or more compound substance etc.

In the present embodiment, above-mentioned drive electrode 2, fixed electorde 3 and traveling electrode 5 are accommodated in the accommodation section 13 that is formed between pixel electrode 8 and the substrate 50.

Can be decompression state in the accommodation section 13, can fill non-oxidizing gas, also can fill insulativity liquid.

And such accommodation section 13 forms airtight space.Based on this, can prevent each one aging of on-off element 1.Therefore, can bring into play good switching characteristic for a long time.And, owing to the externalities that has prevented from traveling electrode 5, the drive characteristic that on-off element 1 can be played stably.And, because each on-off element 1 is provided with accommodation section 13, so also can prevent the influence between the on-off element 1.

In each on-off element 1 like this, as shown in Figures 3 and 4, when not applying voltage between traveling electrode 5 and drive electrode 2, traveling electrode 5 is separated with fixed electorde 3, is off-state by first distribution 11 to the electricity that send of pixel electrode 8.

And, by between traveling electrode 5 and drive electrode 2, applying voltage, as shown in Figure 5, make between traveling electrode 5 and the drive electrode 2 and produce electrostatic attraction, traveling electrode 5 is contacted with fixed electorde 3, is conducting state by first distribution 11 to the electricity that send of pixel electrode 8.

The on-off element 1 of such machinery has the photostability that is better than TFT.And the light that the on-off element 1 that relates to does not generate as TFT leaks.Therefore, there is no need to be provided for on-off element 1 is carried out the light shield layer of the black matrix etc. of shading, can increase the aperture opening ratio in the active matrix apparatus 10.And the on-off element that relates to 1 is not owing to there is temperature variant characteristic, cooling device that can summary active matrix apparatus 10.And, compare TFT, can make related on-off element 1 carry out switching manipulation at high speed.

More than in Shuo Ming the on-off element 1, in direction along the plate face of substrate 50, diverse location ground configuration fixed electorde 3, traveling electrode 5 and drive electrode 2 mutually, in the direction along the plate face of substrate 50, formation traveling electrode 5 is so that in fixed electorde 3 side displacements.

Utilize such formation, as previously mentioned,, can be suppressed at the area of each electrode in overlooking even increase the area (the particularly area of the opposed faces of traveling electrode 5 and drive electrode 2) of the electrode surface of each electrode.Therefore, do not increase the driving voltage of on-off element 1, aperture opening ratio is improved.That is, realize the labour-saving simultaneously, can bring into play the advantage of the on-off element that uses machinery to greatest extent and further improve aperture opening ratio.

Particularly, in the present embodiment, because fixed electorde 3, traveling electrode 5 and drive electrode 2 form lamellar respectively, and its plate face is for almost to form the setting at right angle with the plate face of substrate 50, so can reduce the area of each traveling electrode 5, fixed electorde 3 and drive electrode 2 when overlooking substrate 50 in the extreme.Its result can obtain very high aperture opening ratio.

And, because fixed electorde 3, traveling electrode 5 and drive electrode 2 extend on the direction parallel with first distribution 11 or second distribution 12 respectively, so can reduce the area of on-off element 1 and pixel electrode 8 overlapping areas when overlooking substrate 50.Its result can make aperture opening ratio improve.

Therefore, as mentioned above, cantilever support ground constitutes traveling electrode 5 so that the 52 side displacements of its free end, configuration fixed electorde 3 is so that opposed with the end of free end 52 sides of traveling electrode 5, compares configuration driven electrode 2 more closely with fixed electorde 2 so that opposed with the part of stiff end 51 sides of traveling electrode 5.And as shown in Figure 5, fixed electorde 3, drive electrode 2 and traveling electrode 5 under the state that traveling electrode 5 and drive electrode 2 separate, make traveling electrode 5 contact with fixed electorde 3.Based on this, can prevent the adhesion between traveling electrode 5 and the drive electrode 2.

Particularly, by forming the structure of above-mentioned cantilever support traveling electrode 5, can make the simple structure of being constructed to of on-off element 1.And, because drive electrode 2 is opposite to the fixing distolateral of traveling electrode 5, so when traveling electrode 5 displacements (flexural deformation) during to drive electrode 2 sides, the reacting force that traveling electrode 5 returns to previous status is big.Therefore, can positively prevent the adhesion of drive electrode 2 and traveling electrode 5.

(manufacture method of active matrix apparatus)

Next, with reference to Fig. 6 to Fig. 8, the example of manufacture method of the active matrix apparatus 10 of present embodiment is described.

Fig. 6 to Fig. 8 is respectively the figure of the manufacture method (manufacture method of each on-off element) of the active matrix apparatus that is used to illustrate Figure 1 and Figure 2.In addition, Fig. 6 and Fig. 7 are the left side for the planimetric map corresponding with Fig. 3 to be shown, and the right side is that the sectional view corresponding with Fig. 2 is shown, and Fig. 8 shows the sectional view corresponding with Fig. 2.And, in the following description, for ease of explanation, among the figure and Fig. 8 on the right side among Fig. 6 and Fig. 7, upside for " on ", downside is that D score, left side are that " left side ", right side are " right side ".

The manufacture method of active matrix apparatus 10 comprises: [A] forms the step of first dielectric film that become first insulation course 41 on substrate 50; [B] forms the step of drive electrode 2, fixed electorde 3, traveling electrode 5 and terminal 61,62,63; [C] forms the step of second dielectric film, second distribution 12, the 3rd dielectric film, first distribution 11, the 4th dielectric film, pixel electrode 8 successively; [D] forms the step of accommodation section 13; And [E] forms the step of sealant 9.

Below, explain each step successively.

[A]

At first, prepared substrate 50 shown in Fig. 6 (a), on this substrate 50, forms the first dielectric film 41A.

This first dielectric film 41A forms first insulation course 41 for utilizing step described later [F].

For example, when constituting the first dielectric film 41A with organic insulation, can be by after coating (supply) contains the solution of organic insulation or its precursor on the substrate 50, as required this is filmed and carry out aftertreatment (for example, heating, ultrared irradiation, hyperacoustic application etc.) and form the first dielectric film 41A.

As on substrate 50, applying the method that (supply) contains the solution of organic insulation or its precursor, for example can use coating process, print process etc.

And, when constituting the first dielectric film 41A, for example can utilize thermal oxidation method, CVD method, SOG method etc. to form the first dielectric film 41A with inorganic material.And, utilize and in starting material, use polysilazane, as the first dielectric film 41A, can utilize wet processing to form silicon fiml, silicon nitride film.

[B]

-B1-

Next, shown in Fig. 6 (b), on the first dielectric film 41A, form groove 411.Based on this, obtain the first dielectric film 41B.

Therefore, groove 411 forms according to the degree of depth that the bottom surface does not reach substrate 50.

This groove 411 forms has the shape of cross section (quadrangle) that forms the side at right angle with the plate face of substrate 50, and its side is the face that is used to form each electrode 2,3,5 of aftermentioned on-off element 1.

Formation method (removing the method for the part of the first dielectric film 41A) as groove 411, no particular determination, for example, can be the etching method of plasma etching, reactive iron etching, light beam etching (beam etching), light assisted etch physics such as (photo assis etching), and a kind of in the etching method of chemistry such as Wet-type etching etc. or be used in combination two or more.

At this moment, on the first dielectric film 41A, utilize photolithography to form to have resist layer with the opening of the shape corresponding shape of groove 411.This resist layer is used as mask, and that removes the first dielectric film 41A does not need part.

Then, by removing resist layer, obtain groove 411.

In addition, after drive electrode 2 and fixed electorde 3 etc. can be filmed by the colloidal liquid (dispersion liquid) that for example contains electroconductive particle in supply on the substrate 50, the liquid liquid materials such as (solution or dispersion liquids) that contains electric conductive polymer and formation respectively, as required, this is filmed carry out aftertreatment (for example, heating, ultrared irradiation, hyperacoustic application etc.) and form.

-B2-

Next, shown in Fig. 7 (a), on the first dielectric film 41B, form conductive film 64.

This conductive film 64 is each electrode 2,3,5 and the terminals 61,62,63 that form on-off element 1.

The constituent material of this conductive film 64 can use the constituent material of each electrode 2,3,5 of described on-off element 1.

And, formation method as conductive film 64, no particular determination can use wet type plating such as dry type electrochemical plating, metallide, dipping plating, plated by electroless plating such as chemical vapour deposition techniques such as plasma CVD, hot CVD, laser CVD, vacuum moulding machine (vacuum deposition), reactive sputtering (low-temp reaction sputtering method), ion plating, metallikon, sol-gel facture, MOD method, film combination etc.

When with silicon being main material formation conductive film 64, can form α-Si (amorphous silicon) material or silit with the CVD method.

-B3-

Next, shown in Fig. 7 (b), remove the part (not needing part) of conductive film 64.Based on this, obtain drive electrode 2, fixed electorde 3, traveling electrode 5, terminal 61,62,63.

As the method for a part of removing conductive film 64, no particular determination can use the method same with described step-B1-.

[C]

Next, shown in Fig. 8 (a), form the second dielectric film 71A, second distribution 12, the 3rd dielectric film 72A, first distribution 11, the 4th dielectric film 73A, pixel electrode 8 successively.Therefore, when forming second insulation course 71, imbed 411 ones of the grooves of the first dielectric film 41B, form the first dielectric film 41C.

Therefore, the second dielectric film 71A is the part that become second insulation course 71, and the 3rd dielectric film 72A is the part that become the 3rd insulation course 72, and the 4th dielectric film 73A is the part that become the 4th insulation course 73.

Each self-forming method of second distribution 12, first distribution 11 and pixel electrode 8, no particular determination can use and described step [A] and the identical method of step-B1-.

In addition, when utilizing described step-B2-to constitute to be the conductive film 64 of main material,, preferably use Al-Si alloy (si content 2%) if be that main material constitutes first distribution 11, conductive layer 6 with Al with silicon.

And each self-forming method of the second dielectric film 71A, the 3rd dielectric film 72A and the 4th dielectric film 73A can be used and the identical method of described step [A].

[D]

Next, shown in Fig. 8 (b), pass the through hole (not shown) that is formed at pixel electrode 8, the Wet-type etching first dielectric film 41C, the second dielectric film 71A, the 3rd dielectric film 72A and the 4th dielectric film 73A form accommodation section 13.Based on this, obtain first insulation course 41, second insulation course 71, the 3rd insulation course 72 and the 4th insulation course 73.

Be described more specifically, utilization forms on pixel electrode 8 has the mask of opening so that expose the through hole (not shown) of pixel electrode 8, and this mask carried out Wet-type etching, remove the part separately of the first dielectric film 41C, the second dielectric film 71A, the 3rd dielectric film 72A and the 4th dielectric film 73A, form first insulation course 41, second insulation course 71, the 3rd insulation course 72 and the 4th insulation course 73.Based on this, form the accommodation section 13 that holds drive electrode 2, fixed electorde 3 and traveling electrode 5.

Then, remove mask.

[E]

Next, shown in Fig. 8 (c), form sealant 9 so that cover a plurality of pixel electrodes 8.Based on this, obtain active matrix apparatus 10 (on-off element 1).

As described above, can make active matrix apparatus 10.

＜the second embodiment 〉

Next, second embodiment of the present invention is described.

Fig. 9 shows the figure that the summary of the on-off element that possesses in the active matrix apparatus that second embodiment of the present invention relates to constitutes, Figure 10 to Figure 12 is respectively the figure of the manufacture method that is used for the on-off element shown in the key diagram 9, and Figure 13 is the figure that illustrates as the phase inverter of an example of the application examples of the on-off element shown in Fig. 9.In addition, the planimetric map of the on-off element that Fig. 9 (a) relates to for second embodiment of the present invention, Fig. 9 (b) are the B-B line sectional view of Fig. 9 (a).And Figure 10 to Figure 12 illustrates the sectional view corresponding to Fig. 9 (b) respectively.

Below, at second embodiment, mainly being illustrated in the difference of described first embodiment, identical item is then omitted its explanation.And in Fig. 9, the formation identical with described first embodiment used same-sign.

The on-off element of present embodiment is except that its manufacture method and corresponding formation difference, identical with the on-off element of described first embodiment.

On-off element 1A shown in Fig. 9 comprises drive electrode 2, fixed electorde 3 and traveling electrode 5A, and these are arranged on the face of substrate 50.

The major part of such on-off element 1A (being drive electrode 2, fixed electorde 3 and traveling electrode 5A major part separately) is accommodated in the accommodation section 13A that is arranged on the substrate 50.Form this accommodation section 13A so that connecting the insulation course 41D that is arranged on the substrate 50 on the thickness direction of substrate 50.

Insulation course 41D is made of ground floor 412, the second layer 413 and the 3rd layer 414.

Ground floor 412 comprises the wall vertical with the plate face of substrate 50 415, forms drive electrode 2 on this wall 415.And ground floor 412 comprises the wall 416 that the plate face with substrate 50 is vertical and parallel with wall 415, forms fixed electorde 3 on this wall 416.In addition, by the explanation of manufacture method described later, ground floor 412, the second layer 413 and the 3rd layer 414 are described in detail.

Traveling electrode 5A is set so that opposed with such drive electrode 2 and fixed electorde 3.

Traveling electrode 5A forms elongate (promptly banded), fixes an end (left-hand end among Fig. 9 (a)) and cantilever support on its length direction.Based on this, the free end side of traveling electrode 5A can be to drive electrode 2 and fixed electorde 3 sides (downside) displacement.

And traveling electrode 5A and opposed part fixed electorde 3 promptly form tabular surface 53A with the electrode surface almost parallel of fixed electorde 3 at the leading section of traveling electrode 5A.By such tabular surface 53A is set, when traveling electrode 5A contacts with fixed electorde 3, can increase its contact area on traveling electrode 5A.Based on this, can positively contact traveling electrode 5A and fixed electorde 3 when needing, can improve the reliability of on-off element 1A.

Next, the manufacture method of the on-off element 1A of described structure is described.In addition, in the following description,, the manufacture method of on-off element 1A is described as an example of the manufacture method of on-off element of the present invention.

The manufacture method of on-off element 1A comprises that [1] forms the step of end difference on substrate 50; [2] step of formation first electrode on the wall of end difference; [3] form insulation course to cover the step of first electrode; [4] step of formation second electrode on insulation course; And [5] remove the step of the part of insulation course, and with first electrode as drive electrode, second electrode as traveling electrode.

Below, explain each step [1]～[5] successively.

[1]

At first, shown in Figure 10 (a), on substrate 50, form ground floor 412.Based on this, has the end difference of the wall vertical 415 in the one side side formation of substrate 50 with the plate face of substrate 50.

Can form ground floor 412 by a part that forms dielectric film and remove this dielectric film.As the formation method of dielectric film, can use the identical method of formation method of the first dielectric film 41A of the step [A] in the manufacture method with the on-off element 1 of described first embodiment.And, as the method for a part of removing dielectric film, can use the identical method of formation method of the groove 411 of the step [B] 1 in the manufacture method with the on-off element 1 of described first embodiment.

[2]

2-1

Next, shown in Figure 10 (b), form first electrode layer 65 to cover ground floor 412.

At this moment, form first electrode layer 65 to cover on the wall 415,416.

As the formation method of first electrode layer 65, can use the identical method of formation method of the conductive film 64 of the step B2 in the manufacture method with the on-off element 1 of described first embodiment.

2-2

Then, shown in Figure 10 (c), remove the part (patterning) of first electrode layer 65, form the first electrode 65A.

With the drive electrode 2 identical shaped and same size ground formation first electrode 65A.That is, form drive electrode 2 in this step.And, in this step,, also can form fixed electorde 3 by first electrode layer 65 is formed pattern though do not show among the figure.

Method as a part of removing first electrode layer 65, can use the identical method of method of the part of removing conductive film 64 of the step B3 in the manufacture method with the on-off element 1 of described first embodiment, particularly, preferably use isotropic etching (isotropic etching).

Like this, on wall 415, form the first electrode 65A.

[3]

Next, shown in Figure 11 (a), formation has the insulation course 413A of insulativity to cover the first electrode 65A.

Insulation course 413A is that a part is removed in step described later [5], and forms the part (sacrifice layer) of the second layer 413 described later.

As the formation method of insulation course 413A, can use the identical method of formation method of the first dielectric film 41A of the step [A] in the manufacture method with the on-off element 1 of described first embodiment.

And the thickness of insulation course 413A is the thickness of the distance (being electrostatic gap) between corresponding described drive electrode 2 and the traveling electrode 5A.Based on this, in the step described later [5], when removing insulation course 413A a part of, can come the distance between regulation drive electrode 2 and the traveling electrode 5A with the thickness of insulation course 413A.

And, do not show among the figure, also can form insulation course 413A to cover fixed electorde 3.

And, in this step [3], be preferably formed the film that the etching that is used for aftermentioned step [5] (removing sacrifice layer) is had repellence, and on its film, form insulation course 413A.Based on this, in step described later [5], can prevent that the first electrode 65A, substrate 50 etc. are etched.

[4]

4-1

Next, shown in Figure 11 (b), on insulation course 413A, form the second electrode lay 66.

As the formation method of the second electrode lay 66, can use the identical method of formation method of the conductive film 64 of the step B2 in the manufacture method with the on-off element 1 of described first embodiment.

4-2

Then, shown in Figure 11 (c), a part of removing the second electrode lay 66 forms the second electrode 66A.

Method as a part of removing the second electrode lay 66, can use the identical method of method of the part of removing conductive film 64 of the step B3 in the manufacture method with the on-off element 1 of described first embodiment, particularly preferably use anisotropic etching.

, same size ground identical shaped with traveling electrode 5A forms the second electrode 66A.That is, form traveling electrode 5A in this step.

Like this, on insulation course 413A, form the second electrode 66A (traveling electrode 5A), so that opposed across insulation course 413A and the first electrode 65A (drive electrode 2).

And, do not show among the figure, form the second electrode 66A, so that opposed across insulation course 413A and fixed electorde 3.

[5]

5-1

Next, shown in Figure 12 (a), form the 3rd layer 414.

Can form the 3rd layer 414 by a part that forms dielectric film and remove this dielectric film.As the formation method of dielectric film, can use the identical method of formation method of the first dielectric film 41A of the step [A] in the manufacture method with the on-off element 1 of described first embodiment.And, as the method for a part of removing dielectric film, can use the identical method of formation method of the groove 411 of the step B1 in the manufacture method with the on-off element 1 of described first embodiment.

5-2

Next, shown in Figure 12 (b), a part of removing insulation course 413A.At this moment, in insulation course 413A, remove part between the first electrode 65A (drive electrode 2) and the second electrode 66A (traveling electrode 5A) and peripheral part of the second electrode 66A (traveling electrode 5A).

Based on this, form the second layer 413 and form the first electrode 65A (drive electrode 2) and the second electrode 66A (traveling electrode 5A) between electrostatic gap, make second electrode 66A (traveling electrode 5A) position changeable simultaneously, so that contact/separate with the first electrode 65A (drive electrode 2).

And, do not show among the figure that among the insulation course 413A, the part between the fixed electorde 3 and the second electrode 66A (traveling electrode 5A) also is removed.

As the method for a part of removing insulation course 413A, can use isotropic etching.And, when removing insulation course 413A a part of,, preferably before this isotropic etching, use anisotropic etching though the opening 417 that can pass the 3rd layer 414 carries out anisotropic etching.That is, preferably according to the order of anisotropic etching, isotropic etching, the opening 417 that passes the 3rd layer 414 carries out etching.Based on this, can reduce the amount (preventing the side etching of undesirable) of the side etching (side etching) of insulation course 413A.

As mentioned above, drive electrode 2 is opposed across electrostatic gap with traveling electrode 5A, obtains on-off element 1A simultaneously, and it constitutes with respect to drive electrode 2, and traveling electrode 5A position changeable is so that contact/separate.

According to the manufacture method of the on-off element 1A of above explanation, can utilize the thickness of insulation course 413A to come the size of the distance (being electrostatic gap) between regulation traveling electrode 5A and the drive electrode 2.And, can make the thickness of insulation course 413A littler than line that uses photolithography to form and obtain or minimum widith at interval.Therefore, can reduce electrostatic gap.Its result can reduce the driving voltage of on-off element 1A, and, can reduce being provided with at interval of on-off element 1A, improve the design freedom of the active matrix apparatus that has used on-off element 1A.And, compare with line that utilizes photolithography to form and obtain or wide dimensional accuracy at interval, can stipulate the thickness of insulation course 413A accurately.Therefore, the on-off element 1A of Zhi Zaoing can stipulate the distance between traveling electrode 5A and the drive electrode 2 accurately as described above, and its result can reduce the deviation of the electrostatic gap of each element, realizes stable switching characteristic.

And, in described first embodiment, because drive electrode 2 and traveling electrode 5 are formed by identical layer (conductive film 64), so there is the restriction based on line that the photolithograph method is formed and obtain or minimum widith at interval in the distance between drive electrode 2 and the traveling electrode 5, only forms an on-off element in its minimum widith.On the contrary, the manufacture method of the on-off element 1A that present embodiment relates to, distance between drive electrode 2 and the traveling electrode 5A is not made the restriction of the formation of photolithograph method and line that obtains or minimum widith at interval, can form two on-off elements in its minimum widith.Therefore, when using the on-off element relate to form peripheral circuit etc., can dwindle its designed size.

For example, as shown in figure 13, with the same on-off element utilization that constitutes of such on-off element 1A as shared combination drive electrode 2 and fixed electorde 3 both, can constitute phase inverter.And related on-off element can constitute other logical circuits by its combination.Phase inverter shown in Figure 13, when Vin is (Vdd+Vss)/2-Δ Vt, output Vdd, when Vin is (Vdd+Vss)/2+ Δ Vt, output Vss.Such logical circuit is not if Δ Vth smaller or equal to (Vdd-Vss)/2, then send electric current (leakage current) owing to do not produce the passing through of logical circuit that is used for being made of cmos circuit, so reliability is very high.

(electro-optical display device)

Next, an example as electro-optical display device of the present invention describes the liquid crystal panel with described active matrix apparatus 10.

Figure 14 is the longitudinal diagram of the embodiment when electro-optical display device of the present invention being shown being applied to liquid crystal panel.

As shown in figure 14, as the liquid crystal panel 100 of electro-optical display device comprise alignment films 40 that described active matrix apparatus 10, the alignment films 60 that engages with active matrix apparatus 10, liquid crystal panel engage with counter substrate 20 with counter substrate 20, with liquid crystal panel, the liquid crystal layer 90 that constitutes by the liquid crystal of enclosing the space between alignment films 60, the alignment films 40, the light polarizing film 80 of outside surface (following) side that is engaged in active matrix apparatus (LCD drive g device) 10.

The black matrix 204 that liquid crystal panel comprises micro lens substrate 201, is arranged on the top layer 202 of the micro lens substrate 201 that relates to and formed by opening 203 with counter substrate 20, be arranged on the nesa coating (common electrode) 209 that is used to cover black matrix 204 on the top layer 202.

Micro lens substrate 201 comprises: be provided with the set micro lens that has of a plurality of (in a large number) recess (micro lens recess) 205 with concave curved surface and be engaged in the related top layer 202 that has micro lens with 205 set of the recesses of the substrate 206 of recess with the substrate (first substrate) 206 of recess and by resin bed (adhesive layer), and, in resin bed 207, utilize the resin that is filled in the recess 205 to form micro lens 208.

Herein, active matrix apparatus 10 is the device of the liquid crystal of driving liquid crystal layer 90.

The on-off element 1 of this active matrix apparatus 10 is connected in the control circuit that does not show among the figure and controls the electric current of supplying with to pixel electrode 8.Based on this, can control discharging and recharging of pixel electrode 8.

Alignment films 60 is engaged in the pixel electrode 8 of active matrix apparatus 10, and alignment films 40 is engaged in the liquid crystal layer 90 of liquid crystal panel with counter substrate 20.Herein, alignment films 60 also is used as the sealant 9 of described active matrix apparatus 10.

Alignment films 40,60 has the function of (when nothing applies voltage) state of orientation that regulation constitutes the liquid crystal molecule of liquid crystal layer 90 respectively.

Alignment films 40,60 no particular determinations usually mainly are made of macromolecular materials such as polyimide resin, polyamide-imide resin, polyvinyl alcohol (PVA), teflon etc.In the described macromolecular material, preferred especially polyimide resin, polyamide-imide resin.If alignment films 40,60 mainly is to be made of polyimide resin, polyamide-imide resin, then in manufacturing step, can forms polymeric membrane easily, and have characteristics such as good thermotolerance, drug resistance.

And, as alignment films 40,60, usually use the film that the film that is made of above-mentioned material has been carried out being used to give the orientation function treatment of the liquid crystal molecular orientation that regulation constitutes liquid crystal layer 90.As the facture that is used to give the orientation function, can be exemplified as: rubbing manipulation, optical alignment method etc.

Preferred 20～the 120nm of the average thickness of such alignment films is more preferably 30～80nm.

Liquid crystal layer 90 contains liquid crystal molecule, and according to discharging and recharging of pixel electrode 8, related liquid crystal molecule is the change in orientation of liquid crystal.

As related liquid crystal molecule, if nematic liquid crystal, smectic liquid crystals etc. can be orientated liquid crystal, then can use any liquid crystal molecule, but when being to use TN type liquid crystal panel, be preferably formed nematic liquid crystal, for example can be: cyclohexylbenzene derivant liquid crystal, the biphenyl derivatives liquid crystal, xenyl cyclohexane derivant liquid crystal, terphenyl derivant liquid crystal, phenyl ether derivant liquid crystal, the phenyl ester derivatives liquid crystal, bis cyclohexane derivant liquid crystal, azomethine derivant liquid crystal, the azo derivative liquid crystal, pyrimidine base derivant liquid crystal, 3-dioxane derivatives liquid crystal and cubane derivant liquid crystal etc.And, also can contain in these nematic liquid crystal molecules and introduce the substituent liquid crystal molecules of fluorine class such as single fluorine-based, two fluorine-based, three fluorine-based, trifluoromethyl, trifluoromethoxy.

In such liquid crystal panel 100, an opening of a common micro lens 208, the black matrix 204 corresponding with the optical axis Q of related micro lens 208 203, a pixel electrode 8 and an on-off element 1 being connected in related pixel electrode 8 are corresponding to a pixel.

Pass with the incident light L of counter substrate 20 side incidents from liquid crystal panel and to have the substrate 206 of micro lens, and by micro lens 208 time, focus on and pass opening 203, nesa coating 209, liquid crystal layer 90, pixel electrode 8, the substrate 50 of resin bed 207, top layer 202, black matrix 204 with recess.At this moment, owing to be provided with light polarizing film 80 at the light incident side of micro lens substrate 201, when incident light L saw through liquid crystal layer 90, incident light L became linearly polarized photon.At this moment, control the polarization direction of this incident light L according to the state of orientation of the liquid crystal molecule of liquid crystal layer 90.Therefore, see through light polarizing film 70, can control the brightness of emergent light by making incident light L through liquid crystal panel 100.

Such liquid crystal panel 100 has described micro lens 208 and passes through the opening 203 of black matrix 204 by the incident light L focusing of micro lens 208 then.On the contrary, cover incident light L in the part that does not form the opening 203 of black matrix 204.Therefore, in liquid crystal panel 100, can prevent that the part of unwanted light beyond the pixel from leaking, and can suppress the weakening of incident light L of pixel portion.Therefore, liquid crystal panel 100 has high light transmission rate in pixel portions.

Liquid crystal panel 100 according to the active matrix apparatus 10 with above explanation can have good reliability, and can show high quality images.

In addition, photoelectricity display device of the present invention is not limited to be applied to such liquid crystal panel, also can be applied to electrophoretic display apparatus, organic or inorganic EL display device etc.

(electronic equipment)

Next, as the example of electronic equipment of the present invention, the electronic equipment that possesses described liquid crystal panel 100 is described according to the example of first～the 4th shown in Figure 15～18.

(first example)

Figure 15 is the stereographic map that illustrates as the formation of the PC of the mobile model (or notebook type) of first example of electronic equipment of the present invention.

In this figure, PC 1100 is made of body 1104 that comprises keyboard 1102 and display unit 1106, and display unit 1106 is rotatably supported with respect to body 1104 by hinge arrangement.

In this PC 1100, display unit 1106 comprises the back-lighting that does not show among described liquid crystal panel 100 and the figure.By making the light transmission liquid crystal panel 100 that is derived from back-lighting, displayable image (information).

(second example)

Figure 16 is the stereographic map that illustrates as the formation of the mobile phone (containing PHS) of second example of electronic equipment of the present invention.

In this figure, mobile phone 1200 comprises a plurality of action buttons 1202, receiver 1204 and microphone 1206, comprises the back-lighting that does not show among described liquid crystal panel 100 and the figure simultaneously.

(the 3rd example)

Figure 17 is the stereographic map that illustrates as the formation of the digital camera of the 3rd example of electronic equipment of the present invention.In addition, in this figure, also show simply and being connected of external unit.

Therefore, with common camera according to the light image of subject and photosensitive silver sensitive film (photosensitive film) is different, digital camera 1300 generates image pickup signal (picture signal) after utilizing the light image of CCD imaging apparatus opto-electronic conversion subjects such as (chargecoupled device).

The back side of the housing in the digital camera 1300 (body) 1302 is provided with the back-lighting that does not show among described liquid crystal panel 100 and the figure, utilize CCD to show according to image pickup signal, liquid crystal panel 100 is brought into play function as the view-finder that subject is shown as electronic image.

Be provided with circuit substrate 1308 in the inside of housing.Be provided with the storer that to store (memory) image pickup signal from circuit substrate 1308.

And, in the face side of housing 1302 (the inside side that diagram constitutes) light receiving unit 1304 that contains optical lens (image pickup optical system), CCD etc. is set.

Photographer confirms to be shown in the subject of liquid crystal panel 100 and to press shutter release button 1306, and then the CCD image pickup signal of this time point is transmitted, is stored in the storer of circuit substrate 1308.

And, in this digital camera 1300, be provided with the input/output terminal 1314 that video signal output terminal 1312, data communication are used in the side of housing 1302.And, as shown in the figure, as required, respectively TV monitor 1430 is connected in video signal output terminal 1312, PC 1440 is connected in the input/output terminal 1314 that data communication is used.And by predetermined operation, the image pickup signal that is stored in the storer of circuit substrate 1308 is output to TV monitor 1430, PC 1440.

(the 4th example)

Figure 18 for pattern figure as the optical system of the projection display device (liquid crystal projector) of the 4th example of electronic equipment of the present invention is shown.

As shown in figure 18, projection display device 300 comprises: light source 301, lamp optical system with a plurality of integrator lens, color separating optical system (leaded light optical system) with a plurality of dichronic mirrors etc., (red using) liquid crystal light valve (liquid crystal light shutter array) 240 corresponding to redness, (green using) liquid crystal light valve (liquid crystal light shutter array) 250 corresponding to green, (blue using) liquid crystal light valve (liquid crystal light shutter array) 260 corresponding to blueness, the only dichroic mirror surfaces 211 of reflection red light and the only colour splitting prism (color combining optical) 210 of dichroic mirror surfaces 212 formation of reflect blue light, and projecting lens (projection optical system) 220.

And lamp optical system comprises integrator lens 302 and 303.Color separating optical system comprises: (only see through red light) dichronic mirror 305 of mirror 304,306,309, reflect blue light and green light, only dichronic mirror 307, the only dichronic mirror of reflect blue light (or the mirror of reflect blue light) 308 and the collector lens 310,311,312,313 and 314 of reflects green.

Liquid crystal light valve 250 comprises described liquid crystal panel 100.Liquid crystal light valve 240,260 also is similarly to constitute with liquid crystal light valve 250.The liquid crystal panel 100 that these liquid crystal light valves 240,250 and 260 comprise is connected to the driving circuit that does not show among the figure.

In addition, in projection display device 300, constitute optics chunk 200 by colour splitting prism 210 and projecting lens 220.And the liquid crystal light valve 240,250,260 that this optics chunk 200, relative colour splitting prism 210 are provided with regularly constitutes display units 230.

Below, the effect of projection display device 300 is described.

The white light (white light beam) that light source 301 penetrates sees through integrator lens 302 and 303.Utilize integrator lens 302 and 303, the light intensity of this white light (Luminance Distribution) becomes even.The white light preferred light strength ratio that light source 301 penetrates is bigger.Based on this, can make the image that is formed on the screen 320 distinct more.And, in projection display device 300, owing to use the good liquid crystal panel 100 of photostability, so, also can obtain good long term stability when even the light intensity that penetrates from light source 301 is big.

The white light that sees through integrator lens 302 and 303 utilizes the left side reflection of mirror 304 in Figure 18, and blue light in this reflected light (B) and green light (G) are utilized the following lateral reflection of dichronic mirror 305 in Figure 18 respectively, and red light (R) sees through dichronic mirror 305.

The red light that has seen through dichronic mirror 305 is utilized the following lateral reflection of mirror 306 in Figure 18, and its reflected light is adjusted by collector lens 310, is incident to red with liquid crystal light valve 240.

Utilize the blue light and the green light in the green light of dichronic mirror 305 reflections to utilize dichronic mirror 307 to the reflection of the left side of Figure 18, blue light sees through dichronic mirror 307.

Utilize the green light of dichronic mirror 307 reflections to be adjusted, be incident to green with liquid crystal light valve 250 by collector lens 311.

And the blue light that sees through dichronic mirror 307 utilizes dichronic mirror (or mirror) 308 to reflex to the left side of Figure 18, and its reflected light utilizes mirror 309 to reflex to the upside of Figure 18.Described blue light is adjusted by collector lens 312,313 and 314, is incident to blue with liquid crystal light valve 260.

Like this, the white light that light source 301 penetrates utilizes color separating optical system to be become red, green and blue three primary colors by color-separated, is imported corresponding liquid crystal light valve and incident respectively.

At this moment, each pixel (on-off element 1 and connected pixel electrode 8) of the liquid crystal panel 100 that has of liquid crystal light valve 240 is promptly modulated by switch control (On/Off) based on the driving circuit (driver element) of the picture signal operation of redness usefulness.

Similarly, green light and blue light are incident to liquid crystal light valve 250 and 260 respectively, and utilize liquid crystal panel 100 modulation separately, so form green with image and blueness image.At this moment, each pixel of the liquid crystal panel 100 that liquid crystal light valve 250 has is controlled by switch with the driving circuit of picture signal operation based on green, and each pixel of the liquid crystal panel 100 that while liquid crystal light valve 260 has is controlled by switch with the driving circuit of picture signal operation based on blueness.

Based on this, utilize liquid crystal light valve 240,250 and 260 modulated red coloured light, green light and blue light respectively, form red respectively with image, green with image and blueness image.

The redness that is formed by described liquid crystal light valve 240 promptly is derived from liquid crystal light valve 240 with image red light is incident to colour splitting prism 210 from face 213, utilizes dichroic mirror surfaces 211 to reflex to the left side of Figure 18, sees through dichroic mirror surfaces 212, is penetrated by exit facet 216.

And the green that is formed by described liquid crystal light valve 250 promptly is derived from liquid crystal light valve 250 with image green light is incident to colour splitting prism 210 from face 214, sees through dichroic mirror surfaces 211 and 212 respectively, is penetrated by exit facet 216.

And the blueness that is formed by described liquid crystal light valve 260 promptly is derived from liquid crystal light valve 260 with image blue light is incident to colour splitting prism 210 from face 215, utilizes dichroic mirror surfaces 212 to reflex to the left side of Figure 18, sees through dichroic mirror surfaces 211, is penetrated by exit facet 216.

Like this, each coloured light that is derived from described liquid crystal light valve 240,250 and 260 is promptly synthesized by colour splitting prism 210 by each image that liquid crystal light valve 240,250 and 260 forms, so form colored image.This image is projected lens 220 projections (enlarging projection) to the screen 320 that is provided with in the precalculated position.

Utilization has the electronic equipment of the liquid crystal panel 100 of above explanation, can have good reliability, and can show high quality images.

In addition, electronic equipment of the present invention is in the PC (mobile model PC) of Figure 15, the mobile phone of Figure 16, the digital camera of Figure 17, outside the projection display device of Figure 18, can also be exemplified as: televisor, video camera, find a view type or directly monitor type tape video recorder, automobile navigation apparatus, pager, electronic notebook (containing communication function), e-dictionary, desk top computer, electronic game computer, word processor, workstation, videophone, monitor is looked in safety utilization of electric power, electron telescope, the POS terminal, the instrument (cash machine of financial institution for example with touch panel, automatic vending machine), medicine equipment (electronic thermometer, sphygmomanometer, blood glucose meter, the cardiogram display, the excusing from death diagnostic device, the introscope display device), fish finder, various pick-up units, the meter class (for example: vehicle, aviation, the meter class of boats and ships), and flight simulator etc.And, much less, also can use described electro-optical display device of the present invention as display part, the monitoring unit of these various electronic equipments.

As mentioned above, electro-optical display device, the electronic equipment with active matrix apparatus 10 can show high quality images in power saving.

More than, according to illustrated embodiment, active matrix apparatus, electro-optical display device and the electronic equipment of invention has been described, but the present invention is not limited to these.

For example, in active matrix apparatus of the present invention, electro-optical display device and electronic equipment, the formation of each one can replace with any formation of performance said function, and, can add formation arbitrarily.

For example, in described embodiment, first distribution 11 and second distribution 12 are arranged on tossing about (promptly of substrate 50 with respect to on-off element 1, be provided with on-off element 1 between first distribution 11 and second distribution 12 and the substrate 50), but first distribution 11 and second distribution 12 also can be arranged between on-off element 1 and the substrate 50.At this moment, in described manufacturing step, also can before the first dielectric film 41A forms, carry out the formation of second distribution 12, the 3rd dielectric film 72A, first distribution 11 and the 4th dielectric film 73A, and form suitable through electrode portion.

And, in described embodiment, situation at formation position (center) basically identical of each electrode 2,3,5 of on-off element 1 on the thickness direction of substrate 50 is illustrated, if it is but opposed respectively with respect to traveling electrode 5 fixed electordes 3 and drive electrode 2, then be not limited thereto, the skew of the formation position (center) of each electrode 2,3,5 of on-off element 1 also can on the thickness direction of substrate 50.At this moment, for example, in described manufacturing step, also can on the side of groove 411, only form traveling electrode 5, on the wall of groove 411, form dielectric film, the narrow groove of width that formation is more shallow than groove 411, (on the dielectric film) forms fixed electorde 3, drive electrode 2 on the side of its groove.

And, in described embodiment, to projection display device (electronic equipment) is to have the device of 3 liquid crystal panels and these all use the situations of electro-optical display device of the present invention to describe, but also can be an electro-optical display device (liquid crystal panel) for the present invention relates in these at least.At this moment, preferably the present invention is applied to the liquid crystal panel that is used for blue usefulness liquid crystal light valve at least.

And, in the described embodiment, liquid crystal on silicon) although understand the example apply the present invention to the infiltration type electro-optical display device, but the present invention does not limit therewith, can be applied to LCOS (liquid crystal on silicon: the electro-optical display device of reflection-type such as yet.

Claims (11)

1. an active matrix apparatus is characterized in that, comprising:

A plurality of pixel electrodes are arranged on the face of substrate;

A plurality of on-off elements, each described on-off element comprises: fixed electorde corresponding to each described pixel electrode setting, is connected with described pixel electrode; Traveling electrode is provided so that with respect to described fixed electorde to contact/separate with can changing the position; And drive electrode, with respect to described traveling electrode across electrostatic gap be set up;

First distribution is connected in each described traveling electrode; And

Second distribution is connected in each described drive electrode,

Wherein, each described on-off element is constituted as, by making between described traveling electrode and the described drive electrode and produce electrostatic attraction to applying voltage between described traveling electrode and the described drive electrode, based on this, make described traveling electrode displacement, described traveling electrode is contacted with described fixed electorde, and make described first distribution and described pixel electrode become conducting state

Described fixed electorde, described traveling electrode and described drive electrode are configured in along mutual different position on the direction of the plate face of described substrate, described traveling electrode is to be configured along the mode to the displacement of described fixed electorde side on the direction of the plate face of described substrate

Wherein, described fixed electorde, described traveling electrode and described drive electrode form lamellar respectively, and are set up with respect to the mode that the plate face of described substrate roughly becomes the right angle with its plate face.

2. active matrix apparatus according to claim 1, wherein, described fixed electorde, described traveling electrode and described drive electrode extend on the direction parallel with described first distribution or described second distribution respectively.

3. active matrix apparatus according to claim 1 and 2, wherein, described traveling electrode constitutes by cantilever support so that its free end side displacement, described fixed electorde is configured to the end of the free end side of described traveling electrode opposed, and described drive electrode is configured to more closely more opposed with the fixing distolateral part of described traveling electrode than described fixed electorde.

4. active matrix apparatus according to claim 1 and 2, wherein, described fixed electorde, described traveling electrode and described drive electrode are configured under the state that described traveling electrode and described drive electrode separate, and described traveling electrode contacts with described fixed electorde.

5. active matrix apparatus according to claim 4 wherein, at least one face in the opposed faces of described traveling electrode and described fixed electorde, forms projection so that stop described traveling electrode to contact with described drive electrode.

6. active matrix apparatus according to claim 1 and 2, wherein, each all comprises the accommodation section that holds described traveling electrode, described drive electrode and described fixed electorde each described on-off element, and this accommodation section forms airtight space.

7. active matrix apparatus according to claim 1 and 2, wherein, described a plurality of pixel electrodes are set at positions different on the thickness direction of described substrate with respect to described a plurality of on-off elements, when overlooking, each described pixel electrode is arranged to surround corresponding described on-off element.

8. active matrix apparatus according to claim 1 and 2, wherein, described first distribution is set up a plurality of along described substrate in parallel to each other, described second distribution intersects with each described first distribution and is set up a plurality ofly along described substrate in parallel to each other, and each described on-off element is set near the intersection point of each described first distribution and each described second distribution.

9. the manufacture method of an on-off element is used for making the on-off element that is included in each described active matrix apparatus of claim 1 to 8, it is characterized in that, comprising:

On a face of described substrate, form the step of end difference with wall vertical with the plate face of described substrate;

On described wall, form the step of first electrode;

Formation has the insulation course of insulativity to cover the step of described first electrode;

On described insulation course, form second electrode so as described second electrode across the step of described insulation course and described first electrode contraposition; And

Remove the part of described insulation course, make between described first electrode and described second electrode and form electrostatic gap, and make described second electrode can contact/separate the step of such displacement with respect to described first electrode,

Wherein, described first electrode is described drive electrode, and described second electrode is described traveling electrode.

10. an electro-optical display device is characterized in that, comprises each described active matrix apparatus in the claim 1 to 8.

11. an electronic equipment is characterized in that, comprises the described electro-optical display device of claim 10.

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