CN101428502A - Droplet ejection head and droplet ejection apparatus - Google Patents

Droplet ejection head and droplet ejection apparatus Download PDF

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Publication number
CN101428502A
CN101428502A CNA2008101748052A CN200810174805A CN101428502A CN 101428502 A CN101428502 A CN 101428502A CN A2008101748052 A CNA2008101748052 A CN A2008101748052A CN 200810174805 A CN200810174805 A CN 200810174805A CN 101428502 A CN101428502 A CN 101428502A
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China
Prior art keywords
junction film
film
substrate
junction
droplet discharging
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CNA2008101748052A
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CN101428502B (en
Inventor
松尾泰秀
大塚贤治
樋口和央
若松康介
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

The present invention provides a liquid drop nozzle which has the advantages of excellent dimension precision, excellent drug resistance, high quality printing for a long time and high reliability, and a liquid drop ejector which is provided with the liquid drop nozzle and has high reliability. The droplet ejection head (1) comprises: a substrate (20) having ejection liquid storing chambers (21); a nozzle plate (10) which is installed below the substrate (20) and is provided with nozzle holes (11); and a sealing plate (30) which is installed on the substrate (20) with a mode of covering the ejection liquid storing chambers (21), wherein the substrate (20) and the nozzle plate (10) are combined through each combining film (151, 152). The combining films (151, 152) respectively comprise an Si-skeleton which is constituted of constituent atoms containing siloxane atoms and has an irregular atomic structure, and disengaging groups combined with the Si framework, wherein, the disengaging groups existing adjacently to the surface of each combining film (151, 152) are disengaged from the Si framework through endowing energy. Furthermore the represented bonding property is used for combining the substrate (20) and the nozzle plate (10).

Description

Droplet discharging head and droplet ejection apparatus
Technical field
The present invention relates to droplet discharging head and droplet ejection apparatus.
Background technology
For example, in the droplet ejection apparatus of ink-jet printer and so on, possesses the droplet discharging head that is used to spray drop.As such droplet discharging head, for example, having of knowing possesses: with the nozzle of black liquid as drop ejection is communicated with, accommodate the black liquid chamber (chamber) of black liquid and make the structure of driving usefulness piezoelectric element of the wall distortion of this China ink liquid chamber.
Under the situation of such droplet discharging head, flexible by making driving with piezoelectric element, make a part (oscillating plate) displacement of black liquid chamber.Thus, make the volume-variation of black liquid chamber, spray black liquid drop from nozzle.
Also have, sensitization bonding agent or elastic adhesive are bonding to be formed with the nozzle plate of nozzle and to divide between the substrate of black liquid chamber and assemble (for example, with reference to patent documentation 1) such droplet discharging head by utilizing.
Yet, when between nozzle plate and substrate, supplying with bonding agent, extremely be difficult to control the quantity delivered of bonding agent.Therefore, can not make the amount homogeneous of the bonding agent of supply, cause the distance of nozzle plate and the substrate heterogeneity that becomes.Cause the volume separately of a plurality of black liquid chambers of in droplet discharging head, the being provided with heterogeneity that becomes thus, or cause volume heterogeneity at each China and Mexico's liquid chamber of droplet discharging head.In addition, the heterogeneity that becomes of the distance between lettering such as droplet discharging head and the printing sheets medium.And then bonding agent might ooze out from the junction.Because such problem causes the dimensional accuracy of droplet discharging head to reduce, the quality of the lettering of ink-jet printer reduces.
In addition, the bonding agent long term exposure is in the black liquid of storing at black liquid chamber.If bonding agent is exposed in the black liquid like this,, cause that bonding agent is rotten, deterioration then because the organic principle in the black liquid.Therefore, the close property of the liquid of black liquid chamber reduction sometimes, or the composition in the bonding agent is separated out in black liquid.
On the other hand, also know the method for utilizing the solid bonding method to engage each one that constitutes droplet discharging head.
It is not clip bond layer such as bonding agent that solid engages, the direct method between the attachment, and for example, knowing has the direct bonding method of silicon, anodic bonding method etc.
Yet there are the following problems for the solid joint.
The material of the parts that can engage is restricted.
In engaging operation, follow the heat treatment under the high temperature (for example, about 700～800 ℃).
Atmosphere in engaging operation is subject to reduced atmosphere.
Can not partly engage regional area.
5-No. 155017 communiques of [patent documentation 1] Japanese kokai publication hei
Summary of the invention
The object of the present invention is to provide dimensional accuracy and resistance to chemical reagents superior, can carry out the high droplet discharging head of the reliability of high-quality lettering for a long time and possess the high droplet ejection apparatus of reliability of described droplet discharging head.
Such purpose realizes by following the present invention.
A kind of droplet discharging head of the present invention is characterized in that having:
Substrate, it is formed with the ejection liquid storeroom of storing ejection liquid;
Nozzle plate, it is arranged on the face of described substrate in the mode that covers described ejection liquid storeroom, and possesses the nozzle bore of described ejection liquid as the drop ejection;
Sealing plate, it is arranged in the mode that covers described ejection liquid storeroom on another face of described substrate,
Described substrate and described nozzle plate engage via second junction film that is provided with on first junction film that is provided with on the surface of described substrate and the surface at described nozzle plate,
Described first junction film and described second junction film comprise respectively: contain siloxanes (key of Si-O) and have the Si skeleton of random atomic structure and the disengaging base that combines with this Si skeleton,
Respectively by giving energy at least a portion zone of described first junction film and described second junction film, make described disengagings base that the near surface at the near surface of described first junction film and described second junction film exists from described Si skeleton disengaging, utilization engages described substrate and described nozzle plate at the cementability that the described zone on the surface of surperficial and described second junction film of described first junction film shows.
Thus, obtain dimensional accuracy and resistance to chemical reagents is superior, can carry out the high droplet discharging head of reliability of high-quality lettering for a long time.
Preferably in droplet discharging head of the present invention, at least one side of described first junction film and described second junction film, from all atoms that constitute, remove the containing ratio of Si atom in the atom behind the H atom and O atom containing ratio add up to 10～90 atom %.
Thus, junction film is because Si atom and O atom form firm network, thereby junction film self is more firm.Therefore, junction film shows especially high bond strength with respect to substrate and nozzle plate.
Preferably in droplet discharging head of the present invention, at least one side of described first junction film and described second junction film, the existence of Si atom and O atom is than being 3:7～7:3.
Thus, the stable of junction film uprises, more firmly bonded substrate and nozzle plate.
Preferably in droplet discharging head of the present invention, the crystallization degree of described Si skeleton is below 45%.
Thus, the Si skeleton contains random atomic structure fully.Therefore, the characteristic of Si skeleton is significantly changed, and the dimensional accuracy and the cementability of junction film are more superior.
Preferably in droplet discharging head of the present invention, at least one side of described first junction film and described second junction film is contained Si-H key.
The create-rule ground that Si-H key is considered to hinder siloxane bond carries out.Therefore, siloxane bond forms avoids Si-H key, and the systematicness of Si skeleton reduces.Like this, by in junction film, containing Si-H key, can efficient form the low Si skeleton of crystallization degree well.
Preferably in droplet discharging head of the present invention, in the infrared absorption spectrum of the junction film that contains described Si-H key, the peak intensity that belongs to siloxane bond was made as 1 o'clock, the peak intensity that belongs to Si-H key is 0.001～0.2.
Thus, the atomic structure in the junction film is the most random relatively.Therefore, junction film is especially superior on bond strength, resistance to chemical reagents and dimensional accuracy.
Preferably in droplet discharging head of the present invention, the described base that breaks away from comprises that being selected from by H atom, B atom, C atom, N atom, O atom, P atom, S atom and halogen is at least a of the group that constitutes of atomic group that atom or these each atoms are configured to combine with described Si skeleton.
It is more superior on the selectivity based on the combination/disengaging of giving of energy that these break away from base.Therefore, such disengaging base can make the cementability of junction film higher.
Preferably in droplet discharging head of the present invention, described disengaging base is an alkyl.
The chemical stability height of alkyl, therefore, to contain the against weather and the resistance to chemical reagents of junction film of alkyl superior as breaking away from base.
Preferably in droplet discharging head of the present invention, in the infrared absorption spectrum of the junction film that contains methyl as described disengaging base, the peak intensity that belongs to siloxane bond was made as 1 o'clock, the peak intensity that belongs to methyl is 0.05～0.45.
Thus, the containing ratio of methyl is optimized, and prevents that methyl from the above generation that hinders siloxane bond of necessity, simultaneously, producing the active hand of necessary and sufficient quantity in junction film, therefore, produces sufficient cementability at junction film.In addition, show sufficient against weather and the resistance to chemical reagents that methyl causes at junction film.
Preferably in droplet discharging head of the present invention, at least one side of described first junction film and described second junction film forms by Plasma Polymerization.
Thus, junction film forms densification and even.Also have, especially securely bonded substrate and nozzle plate.And then the junction film long term maintenance of making by Plasma Polymerization is endowed energy and the state of activate.Therefore, can realize simplification, the efficient activity of the manufacture process of droplet discharging head.
Preferably in droplet discharging head of the present invention, at least one side of described first junction film and described second junction film is that main material constitutes with the polysiloxane.
Thus, junction film self has superior mechanical property.In addition, obtain showing the junction film of especially superior cementability with respect to wide variety of materials.Thereby, by this junction film, bonded substrate and nozzle plate more firmly.In addition, forming can be easily and the junction film that carries out the control of non-cementability and cementability reliably.And then junction film shows superior lyophobicity, therefore, obtains the high head of reliability of superior durability.
Preferably in droplet discharging head of the present invention, described polysiloxane is a principal component with the polymer of octamethyltrisiloxane.
Thus, obtain the especially superior junction film of cementability.
Preferably in droplet discharging head of the present invention, in described Plasma Polymerization, the output density of the high frequency when producing plasma is 0.01～100W/cm 2
Thus, the output density that can prevent high frequency is too high and cause unstrpped gas is given the situation of necessary above energy of plasma, simultaneously, can form the Si skeleton with random atomic structure reliably.
Preferably in droplet discharging head of the present invention, at least one side's of described first junction film and described second junction film average thickness is 1～1000nm.
Thus, can prevent the significantly reduced situation of dimensional accuracy between substrate and the nozzle plate, simultaneously, can engage these more firmly.
Preferably in droplet discharging head of the present invention, at least one side of described first junction film and described second junction film is not for having mobile solid shape film.
Thus, obtain dimensional accuracy very high head compared with the past.In addition, do not need the required time of curing of bonding agent, therefore can carry out firm joint at short notice.
Preferably in droplet discharging head of the present invention, described substrate is that main material constitutes with silicon materials or stainless steel.
The resistance to chemical reagents of these materials is superior, therefore, even long term exposure in ejection liquid, can prevent reliably also that substrate or nozzle plate are rotten, deterioration.In addition, the processability of these materials is superior, therefore, obtains the high substrate of dimensional accuracy.Therefore, the precision of the volume of ejection liquid storeroom uprises, and obtains carrying out the droplet discharging head of high-quality lettering.
Preferably in droplet discharging head of the present invention, described nozzle plate is that main material constitutes with silicon materials or stainless steel.
The resistance to chemical reagents of these materials is superior, therefore, even long term exposure in ejection liquid, can prevent reliably also that substrate or nozzle plate are rotten, deterioration.In addition, the processability of these materials is superior, therefore, obtains the high nozzle plate of dimensional accuracy.
Preferably in droplet discharging head of the present invention, the face that joins with described first junction film of described substrate has been implemented the adhering surface treatment that improves with described first junction film in advance.
Thus, the bond strength between substrate and the junction film can be further improved, even the bond strength of substrate and nozzle plate can be improved.
Preferably in droplet discharging head of the present invention, the face that contacts with described second junction film of described nozzle plate has been implemented the adhering surface treatment that improves with described second junction film in advance.
Thus, the bond strength between nozzle plate and the junction film can be further improved, even the bond strength of substrate and nozzle plate can be improved.
Preferably in droplet discharging head of the present invention, described surface treatment is a plasma treatment.
Thus, can be in order to form junction film, with the surface of substrate or nozzle plate especially optimization.
Preferably in droplet discharging head of the present invention, between described substrate and described first junction film, has the intermediate layer.
Thus, the bond strength between described substrate and the described junction film can be improved, the high droplet discharging head of reliability can be accessed.
Preferably in droplet discharging head of the present invention, between described nozzle plate and described second junction film, has the intermediate layer.
Thus, the bond strength between described nozzle plate and the described junction film can be improved, the high droplet discharging head of reliability can be accessed.
Preferably in droplet discharging head of the present invention, described intermediate layer is that main material constitutes with oxide based material.
Thus, can between substrate and the junction film, and nozzle plate and junction film between improve bond strength respectively.
Preferably in droplet discharging head of the present invention, described energy give be by to the method for the method of described each junction film irradiation energy line, described each junction film of heating, and carry out at least a method that described each junction film is given in the method for compression stress.
Thus, can be fairly simple and efficient give energy to junction film well.
Preferably in droplet discharging head of the present invention, described energy line is the ultraviolet ray of wavelength 150～300nm.
Thus, the energy that is endowed is optimized, and therefore, can prevent that the Si skeleton necessity in the junction film is above destroyed, simultaneously, cuts off the key between Si skeleton and the disengaging base selectively.Thus, can prevent that the characteristic (mechanical property, chemical characteristic etc.) of junction film from reducing, simultaneously, can show cementability at junction film.
Preferably in droplet discharging head of the present invention, the temperature of described heating is 25～100 ℃.
Thus, can prevent substrate or nozzle plate etc. reliably owing to heat goes bad, deterioration, simultaneously, activate junction film reliably.
Preferably in droplet discharging head of the present invention, described compression stress is 0.2～10MPa.
Thus, can avoid substrate or nozzle plate that damage etc. takes place, simultaneously, only, can show sufficient cementability at junction film by only compression.
A kind of droplet discharging head of the present invention is characterized in that having:
Substrate, it is formed with the ejection liquid storeroom of storing ejection liquid;
Nozzle plate, it is arranged on the face of described substrate in the mode that covers described ejection liquid storeroom, and possesses the nozzle bore of described ejection liquid as the drop ejection;
Sealing plate, it is arranged in the mode that covers described ejection liquid storeroom on another face of described substrate,
Described substrate and described nozzle plate engage via second junction film that is provided with on first junction film that is provided with on the surface of described substrate and the surface at described nozzle plate,
Described first junction film and described second junction film comprise respectively: metallic atom, be incorporated into the oxygen atom of this metallic atom and be incorporated at least one side's of described metallic atom and described oxygen atom disengaging base,
Respectively by giving energy at least a portion zone of described first junction film and described second junction film, the described at least one side disengaging that breaks away from base from described metallic atom and described oxygen atom that near surface at the near surface of described first junction film and described second junction film is existed, utilization engages described substrate and described nozzle plate at the cementability that the described zone on the surface of surperficial and described second junction film of described first junction film shows.
Thus, in junction film, break away from base and be incorporated into metal oxide, form the firm film that is difficult to be out of shape.Its result obtains dimensional accuracy and resistance to chemical reagents is superior, can carry out the high droplet discharging head of reliability of high-quality lettering for a long time.
Preferably in droplet discharging head of the present invention, a kind of droplet discharging head is characterized in that, has:
Substrate, it is formed with the ejection liquid storeroom of storing ejection liquid;
Nozzle plate, it is arranged at a face of described substrate in the mode that covers described ejection liquid storeroom, and possesses the nozzle bore of described ejection liquid as the drop ejection;
Sealing plate, it is arranged at another face of described substrate in the mode that covers described ejection liquid storeroom,
Described substrate and described nozzle plate engage via second junction film that is provided with on first junction film that is provided with on the surface of described substrate and the surface at described nozzle plate,
Described first junction film and described second junction film comprise respectively: metallic atom and the disengaging base that constitutes by organic principle,
Respectively by giving energy at least a portion zone of described first junction film and described second junction film, make described disengagings base that the near surface at the near surface of described first junction film and described second junction film exists from institute's junction film disengaging, utilization engages described substrate and described nozzle plate at the cementability that the described zone on the surface of surperficial and described second junction film of described first junction film shows.
Thus, junction film contains metallic atom and by the disengaging base that organic principle constitutes, forms the firm film that is difficult to be out of shape.Its result obtains dimensional accuracy and resistance to chemical reagents is superior, can carry out the high droplet discharging head of reliability of high-quality lettering for a long time.
Preferably in droplet discharging head of the present invention, described substrate and described sealing plate via the junction film identical that is provided with on the surface of described substrate with described first junction film, and surface at described sealing plate on the junction film identical that be provided with described second junction film engage.
Thus, the adhesiveness of substrate and sealing plate uprises, and especially can improve the close property of liquid of ejection liquid storeroom.
Preferably in droplet discharging head of the present invention, described sealing plate is that the duplexer that stacked multilayer forms constitutes,
In the layer in the described duplexer interlayer of at least one group of adjacency layer via the junction film identical that is provided with on the surface of a side layer with described first junction film, and surface at described the opposing party's layer on the junction film identical that be provided with described second junction film engage.
Thus, the adhesiveness of interlayer and the transitivity of distortion uprise, and therefore, the pressure that the distortion that vibrating mechanism can be caused is converted in the ejection liquid storeroom reliably changes.That is, can improve the response of the displacement of sealing plate.
Preferably in droplet discharging head of the present invention, this droplet discharging head also has vibrating mechanism, and described vibrating mechanism is arranged at a side opposite with described substrate of described sealing plate, and makes described sealing plate vibration,
Described sealing plate engages via the junction film identical with described second junction film that is provided with on junction film identical with described first junction film that is provided with on the surface of described sealing plate and the surface at described vibrating mechanism with described vibrating mechanism.
Thus, the adhesiveness between sealing plate and the vibrating mechanism and the transitivity of distortion uprise, and therefore, the pressure that the distortion that vibrating mechanism can be caused is converted in the ejection liquid storeroom reliably changes.
Preferably in droplet discharging head of the present invention, described vibrating mechanism comprises piezoelectric element.
Thus, can easily be controlled at the degree of the deflection of sealing plate generation.Thus, can easily control the size of black drop.
Preferably in droplet discharging head of the present invention, this droplet discharging head also has: the box head that is provided with in the side opposite of described sealing plate with described substrate,
Described sealing plate engages via reaching the junction film identical with described second junction film that is provided with at the junction film identical with described first junction film that is provided with on the surface of described sealing plate on the surface of described box head with described box head.
Thus, the adhesiveness of sealing plate and box head uprises.Its result can utilize the box head, supports sealing plate reliably, can prevent the distortion of sealing plate, substrate and nozzle plate or perk etc. reliably.
A kind of droplet ejection apparatus of the present invention is characterized in that possessing: droplet discharging head of the present invention.
Thus, obtain the high droplet ejection apparatus of reliability.
Description of drawings
Fig. 1 is the exploded perspective view that expression is applicable to droplet discharging head of the present invention first embodiment under the situation of ink jet recording head.
Fig. 2 is the profile of ink jet recording head shown in Figure 1.
Fig. 3 is the skeleton diagram of embodiment that expression possesses the ink-jet printer of ink jet recording head shown in Figure 1.
Fig. 4 is the partial enlarged drawing of the state before the energy of the junction film that possesses of ink jet recording head of expression first embodiment is given.
Fig. 5 is the partial enlarged drawing of the state after the energy of the junction film that possesses of ink jet recording head of expression first embodiment is given.
Fig. 6 is the figure (longitudinal sectional drawing) that is used to illustrate the manufacture method of ink jet recording head.
Fig. 7 is the figure (longitudinal sectional drawing) that is used to illustrate the manufacture method of ink jet recording head.
Fig. 8 is the figure (longitudinal sectional drawing) that is used to illustrate the manufacture method of ink jet recording head.
Fig. 9 is the figure (longitudinal sectional drawing) that is used to illustrate the manufacture method of ink jet recording head.
Figure 10 is the longitudinal sectional drawing of the plasma polymerization that uses in the making of the junction film that possesses with the ink jet recording head that schematically shows first embodiment.
Figure 11 is the partial enlarged drawing that expression is applicable to droplet discharging head of the present invention state before the energy of the junction film that second embodiment under the situation of ink jet recording head possesses is given.
Figure 12 is the partial enlarged drawing that expression is applicable to droplet discharging head of the present invention state after the energy of the junction film that second embodiment under the situation of ink jet recording head possesses is given.
Figure 13 is the longitudinal sectional drawing of the film formation device that uses in the making of the junction film that possesses of the ink jet recording head of second embodiment.
Figure 14 is the schematic diagram of the ionogenic structure that possesses of expression film formation device shown in Figure 13.
Figure 15 is the longitudinal sectional drawing of the film formation device that uses in the making of the junction film that possesses with the ink jet recording head that schematically shows the 3rd embodiment.
Among the figure: 1-ink jet recording head; 10-nozzle plate; 11-nozzle bore; 151,251,351,451a, 451b-first junction film; 152,252,352,452a, 452b-second junction film; 20-ejection liquid storeroom forms substrate; 20 '-mother metal; 21-ejection liquid storeroom; 22-ejection liquid supply chamber; 23-through hole; 30-diaphragm seal; 40-oscillating plate; 50-piezoelectric element; 51-piezoelectric body layer; 52-electrode film; 53-recess; 60-box head; 61-ejection liquid is supplied with the road; 70-reservoir; 31-surface; 301-Si skeleton; 302-siloxane bond; 303-break away from basic; 304-active hand; 100-plasma polymerization; 101-chamber; 102-earth connection; 103-supply port; 104-exhaust outlet; 130-the first electrode; 139-electrostatic chuck; 140-the second electrode; 170-pump; 171-pressure control mechanism; 180-power circuit; 182-high frequency electric source; 183-matching box; 184-distribution; 190-gas supply part; 191-liquid reservoir; 192-gasification installation; 193-gas container; 194-pipe arrangement; 195-diffuser plate; 200-film formation device; 211-chamber; 212-substrate supporting frame; 215-ion gun; 216-target body; 217-target body bearing support; 219-gas supply source; 220-the first shutter; 221-the second shutter; 230-exhaust gear; 231-exhaust lay out; 232-pump; 233-valve; 250-opening; 253-grid; 254-grid; 255-magnet; 256-ion generating chamber; 257-filament; 260-gas supply mechanism; 261-gas supply lines; 262-pump; 263-valve; 264-gas container; 400-film formation device; 411-chamber; 412-substrate supporting frame; 421-shutter; 430-exhaust gear; 431-exhaust lay out; 432-pump; 433-valve; 460-organo metallic material feed mechanism; 461-gas supply lines; 462-storagetank; 463-valve; 464-pump; 465-gas container; 470-gas supply mechanism; 471-gas supply lines; 473-valve; 474-pump; 475-gas container; 9-ink-jet printer; 92-apparatus main body; 921-pallet; 922-ejection port; 93-head unit; 931-print cartridge; 932-carry body; 94-printing equipment; 941-carry the body motor; 942-round travel mechanism; 943-carry the body leading axle; 944-Timing Belt; 95-paper feed; 951-paper supply motor; 952-paper feeding cylinder; 952a-driven cylinder; 952b-head roll; 96-control part; 97-guidance panel; P-recording paper.
The specific embodiment
Below, describe droplet discharging head of the present invention and droplet ejection apparatus in detail based on suitable embodiment shown in the drawings.
＜ink jet recording head 〉
" first embodiment "
At first, first embodiment under the situation that droplet discharging head of the present invention is applicable to ink jet recording head is described.
Fig. 1 is the exploded perspective view that expression is applicable to droplet discharging head of the present invention first embodiment under the situation of ink jet recording head.Fig. 2 is the profile of ink jet recording head shown in Figure 1.Fig. 3 is the skeleton diagram of embodiment that expression possesses the ink-jet printer of ink jet recording head shown in Figure 1.Also have, in the following description, the upside among Fig. 1 and Fig. 2 is called " on ", downside is called D score.
Ink jet recording head 1 shown in Figure 1 (below, be called " 1 ") is equipped on ink-jet printer shown in Figure 3 (droplet ejection apparatus of the present invention) 9.
Ink-jet printer 9 shown in Figure 3 possesses apparatus main body 92, is provided with the pallet 921 that recording paper P is set at the rear, top, is provided with the ejection port 922 of discharging recording paper P in the place ahead, bottom, is provided with guidance panel 97 in upper side.
Guidance panel 97 possesses: for example be made of LCD, OLED display, LED lamp, and show the display part (not shown) of error message etc. and the operating portion (not shown) that is made of various switches etc.
In addition, mainly have in the inside of apparatus main body 92: possess the printing equipment (printing mechanism) 94 that comes and goes the head unit 93 that moves; Send into the paper feed (paper-feeding mechanism) 95 of many recording paper P to printing equipment 94; The control part (controlling organization) 96 of control printing equipment 94 and paper feed 95.
By the control of control part 96, paper feed 95 is with more than intermittent delivery of recording paper P.This recording paper P is by near the bottom of head unit 93.At this moment, head unit 93 moves roughly coming and going on the direction of quadrature with the throughput direction of recording paper P, carries out the printing to recording paper P.That is, the intermittent delivery that comes and goes mobile and recording paper P of head unit 93 becomes main scanning and the subscan in the printing, carries out the printing of ink-jetting style.
Printing equipment 94 possesses: head unit 93, become the carrying body motor 941 and accept to carry the rotation of body motor 941 of drive source of head unit 93, make head unit 93 come and go the round travel mechanisms 942 that move.
Head unit 93 possesses in its underpart: possess 1 of a plurality of nozzle bores 11; To a print cartridge 931 of the black liquid of 1 supply; Carried 1 and print cartridge 931 carry body 932.
Also have,, be filled with the print cartridge of black liquid of four looks of yellow, cyan, magenta, black (deceiving) by use, can carry out colored printing as print cartridge 931.
Coming and going travel mechanism 942 has: carry body leading axle 943 with what it was supported at both ends in framework (not shown); With carry the Timing Belt (timing belt) 944 that body leading axle 943 extends abreast.Carry body 932 and come and go to move to be supported on freely and carry body leading axle 943, and, be fixed in the part of Timing Belt 944.
If by carrying the operation of body motor 941, via pulley, make Timing Belt 944 forward and reverse advancing, then head unit 93 is carried 943 guiding of body leading axle, and head unit 93 comes and goes and moves.Also have, come and go when mobile at this, from the beginning the 1 suitable black liquid of ejection carries out the printing to recording paper P.
Paper feed 95 has: as the paper supply motor 951 of its drive source and the paper feeding cylinder 952 that rotates by the operation of paper supply motor 951.
Paper feeding cylinder 952 comprises the path (recording paper P) that clips recording paper P, and at up and down opposed driven cylinder 952a and head roll 952b, head roll 952b is linked to paper supply motor 951.Thus, paper feeding cylinder 952 many recording paper P that will be arranged at pallet 921 towards printing equipment 94 many send into.Also have, replace pallet 921, also can assemble assembled construction freely for the paper feeding cassette that will accommodate recording paper P.
Control part 96 is for example based on the printed data from main frames such as personal computer or digital camera inputs, control printing equipment 94 or paper feed 95 etc. and print.
Control part 96 is all not shown, but mainly possesses: the memory of the control program of each one of storage control etc., drive printing equipment 94 (carrying body motor 941) drive circuit, drive paper feed (paper supply motor 951) 95 drive circuit, and input from the telecommunication circuit of the printed data of main frame; Be electrically connected with these, carry out the CPU of the various controls in each one.
In addition, be electrically connected the various sensors etc. of the black liquid residual quantity that for example can detect print cartridge 931, the position of head unit 93 etc. respectively at CPU.
Control part 96 is via telecommunication circuit, and the input printed data is stored in memory with it.CPU handles this printed data, based on this deal with data and from the input data of various sensors, to each drive circuit output drive signal.Printing equipment 94 and paper feed 95 move respectively by this driving signal.Thus, recording paper P is printed.
Below, in the time of with reference to Fig. 1 and Fig. 2, describe 1 in detail.
As shown in Figures 1 and 2,1 has: nozzle plate 10; Ejection liquid storeroom forms substrate (substrate) 20; Diaphragm seal 30; The oscillating plate 40 that on diaphragm seal 30, is provided with; The piezoelectric element (vibrating mechanism) 50 and the box head 60 that on oscillating plate 40, are provided with.In addition, in the present embodiment,, constitute sealing plate by the duplexer of diaphragm seal 30 and oscillating plate 40.Also has this 1 formation piezoelectric ink jet formula head.
Ejection liquid storeroom form substrate 20 (below, abbreviate " substrate 20 " as) be formed with a plurality of ejection liquid storerooms (balancing gate pit) 21 of storing black liquid and be communicated with each ejection liquid storeroom 21, and to the ejection liquid supply chamber 22 of the black liquid of each ejection liquid storeroom 21 supply.
As shown in Figures 1 and 2, each sprays liquid storeroom 21 and ejection liquid supply chamber 22 is roughly oblong-shaped respectively under the situation of overlooking, and each width (minor face) that sprays liquid storeroom 21 is the narrow width of width (minor face) than ejection liquid supply chamber 22.
In addition, each sprays liquid storeroom 21 and is configured to be approximate vertical with respect to ejection liquid supply chamber 22, and each sprays liquid storeroom 21 and sprays liquid supply chamber 22 under the situation of overlooking, and is pectination on the whole.
Also have, ejection liquid supply chamber 22 except be depicted as OBL structure as present embodiment, can also for example be the structure of trapezoidal shape, triangle or straw bag shape (capsule shape) under the situation of overlooking.
As the material that constitutes substrate 20, for example, can enumerate metal material, quartz glass, the silicate glasses of the silicon materials, stainless steel, titanium, aluminium and so on of monocrystalline silicon, polysilicon, amorphous silicon and so on
(quartz glass), water soda glass, soda-lime glass, potash-lime glass, plumbous (sodium) glass, barium glass, the glass material of borate glass and so on, aluminium oxide, zirconium dioxide, ferrite, silicon nitride, aluminium nitride, boron nitride, titanium nitride, carborundum, boron carbide, titanium carbide, the ceramic material of tungsten carbide and so on, the material with carbon element of graphite and so on, polyethylene, polypropylene, ethene-propylene copolymer, ethene-acetate ethylene copolymer polyolefin such as (EVA), cyclic polyolefin, improved polyalkene, polyvinyl chloride, Vingon, polyethylene, polyamide, polyimides, polyamidoimide, Merlon, poly--(4-(methylpentene-1), ionomer, acrylic resin, polymethacrylates, Acrylonitrile-butadiene-styrene Copolymer (ABS resin), acrylonitrile-styrol copolymer (AS resin), butadiene-styrol copolymer, polyformaldehyde, polyvinyl alcohol (PVA), ETHYLENE-VINYL ALCOHOL COPOLYMER thing (EVOH), PETG (PET), PEN, polybutylene terephthalate (PBT) (PBT), poly-cyclohexane terephthalate polyester such as (PCT), polyethers, polyether-ketone (PEK), polyether-ether-ketone (PEEK), PEI, polyacetals (POM), polyphenylene oxide, Noryl, modified polyphenylene ether resin (PBO), polysulfones, polyether sulfone, polyphenylene sulfide (PPS), polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene (PTFE), Kynoar, other fluorine resins, polystyrene, polyolefin, polyvinyl chloride, polyurethane series, polyester system, polyamide-based, polybutadiene system, trans polyisobutylene is, fluorubber system, various thermoplastic elastomer (TPE)s such as haloflex system, epoxy resin, phenolic resin, urea resin, melamine resin, aromatic polyamides is a resin, unsaturated polyester (UP), silicone resin, polyurethane etc., or based on these copolymer, mix object, resin materials such as polymer alloy, or make up one or more composite etc. of these each material.
In addition, aforesaid material has been implemented the material of various processing such as oxidation processes (oxide-film formation), plating processing, Passivation Treatment, nitrogen treatment.
Wherein, preferred silicon materials of the constituent material of substrate 20 or stainless steel.The resistance to chemical reagents of such material is superior, therefore, even long term exposure in black liquid, can prevent reliably also that substrate 20 from going bad, the situation of deterioration.In addition, the processability of these materials is superior, therefore, obtains the high substrate of dimensional accuracy 20.Therefore, the precision of the volume of ejection liquid storeroom 21 or ejection liquid supply chamber 22 uprises, and obtains carrying out 1 of high-quality lettering.
In addition, ejection liquid supply chamber 22 constitutes the part of reservoir 70, and it is communicated with as supplying with road 61 with the ejection liquid that is provided with at aftermentioned box head 60, supplies with the common black liquid chamber performance function of black liquid to a plurality of ejection liquid storerooms 21.
In addition, implementing hydrophilic treated in advance at the inner surface of ejection liquid storeroom 21 and ejection liquid supply chamber 22 also can.Thus, can prevent from the black liquid of ejection liquid storeroom 21 and 22 storages of ejection liquid supply chamber, to contain the situation of bubble.
In addition, at the lower surface of substrate 20 (with the face of the opposite side of diaphragm seal 30) via two-layer junction film engagement nozzle plate 10.Specifically, via first junction film 151 of the lower surface that is arranged at substrate 20 be arranged at second junction film 152, bonded substrate 20 and the nozzle plate 10 of the upper surface of nozzle plate 10.
Droplet discharging head of the present invention has feature using first junction film 151 and second junction film 152 on the method for bonded substrate 20 and nozzle plate 10.
This first junction film 151 and second junction film 152 comprise respectively: contain the siloxanes (key of Si-O), and have the Si skeleton of random atomic structure and at the disengaging base of this Si skeleton combination.
Also have, first junction film 151 and second junction film 152 make to break away from base from the disengaging of Si skeleton respectively by giving energy, utilize the cementability, bonded substrate 20 and the nozzle plate 10 that demonstrate on the surface of first junction film 151 and second junction film 152.
Also have, describe in detail in the back about first junction film 151 and second junction film 152.
In the mode corresponding with each ejection liquid storeroom 21, forming (wearing) respectively at nozzle plate 10 has nozzle bore 11.By extrude the black liquid of storing at ejection liquid storeroom 21 to this nozzle bore 11, black liquid can be sprayed as drop.
In addition, nozzle plate 10 constitutes the lower surface of the internal face that respectively sprays liquid storeroom 21 or ejection liquid supply chamber 22.That is, by nozzle plate 10 and substrate 20 and diaphragm seal 30, division respectively sprays liquid storeroom 21 or ejection liquid supply chamber 22.
As the material that constitutes such nozzle plate 10, for example, can enumerate aforesaid silicon materials, metal material, glass material, ceramic material, material with carbon element, resin material or make up one or more composite etc. of these each materials.
Wherein, preferred silicon materials of the constituent material of nozzle plate 10 or stainless steel.The resistance to chemical reagents of such material is superior, therefore, even be exposed to for a long time in the black liquid, also can prevent nozzle plate 10 rotten, deteriorations reliably.In addition, the processability of these materials is superior, therefore, obtains the high nozzle plate of dimensional accuracy 10.Therefore, obtain reliability high 1.
Also have, the preferred linear expansion coefficient of the constituent material of nozzle plate 10 is 2.5～4.5[* 10 under the situation below 300 ℃ -6/ ℃] about.
In addition, the thickness of nozzle plate 10 does not limit especially, but about preferred 0.01～1mm.
In addition, the lower surface at nozzle plate 10 is provided with lyophoby film (not shown) as required.Thus, can prevent from the black liquid of nozzle bore ejection situation to the direction ejection that is not intended to.
As the constituent material of such lyophoby film, for example, can enumerate the coupling agent of functional group or the resin material of lyophobicity etc. with demonstration lyophobicity.
As coupling agent, for example, can use silane is that coupling agent, titanium are that coupling agent, aluminium are that coupling agent, zirconium are that coupling agent, organic phosphoric acid are coupling agent, silicyl peroxidating system coupling agent etc.
Functional group as showing lyophobicity for example, can enumerate fluoroalkyl, alkyl, vinyl, epoxy radicals, styryl, methacryloxy etc.
On the other hand, resin material as lyophobicity, for example, can enumerate the fluorine resin etc. of polytetrafluoroethylene (PTFE), tetrafluoroethene perfluoroalkyl vinyl ether copolymer (PFA), ethene-TFE copolymer (ETFE), perfluoroethylene-propylene copolymer (FEP), ethene-chlorotrifluoroethylcopolymer copolymer (ECTFE) and so on.
On the other hand, the upper surface at substrate 20 engages (bonding) diaphragm seal 30 via two-layer junction film.Specifically, via first junction film 251 that is provided with at the upper surface of substrate 20 and second junction film 252, bonded substrate 20 and the diaphragm seal 30 that are provided with at the upper surface of diaphragm seal 30.
In addition, diaphragm seal 30 constitutes the upper surface of the internal face that respectively sprays liquid storeroom 21 or ejection liquid supply chamber 22.That is, by diaphragm seal 30 and substrate 20 and nozzle plate 10, division respectively sprays liquid storeroom 21 or ejection liquid supply chamber 22.Also have, engage reliably with substrate 20, guarantee respectively to spray the close property of liquid of liquid storeroom 21 or ejection liquid supply chamber 22 by diaphragm seal 30.
As the material that constitutes diaphragm seal 30, for example, can enumerate aforesaid silicon materials, metal material, glass material, ceramic material, material with carbon element, resin material or make up one or more composite etc. of these each materials.
Wherein, resin material, silicon materials or the stainless steel of the preferred polyphenylene sulfide of the constituent material of diaphragm seal 30 (PPS), aromatic polyamide resin and so on.The resistance to chemical reagents of such material is superior, therefore, and can long term storage China ink liquid in ejection liquid storeroom 21 and in the ejection liquid supply chamber 22.
Engage first junction film 251 of such diaphragm seal 30 and substrate 20 and second junction film 252 so long as can engage or the film of adhesive base plate 20 and diaphragm seal 30, just can constitute by material arbitrarily, each constituent material according to substrate 20 or diaphragm seal 30 is suitably selected, but for example, can enumerate epoxy is that bonding agent, silicone-based bonding agent, urethane are bonding agent, scolding tin, solder of bonding agent and so on etc.
In addition, first junction film 251 and second junction film 252 do not need certain setting, omit can yet.In this case, can utilize between substrate 20 and the diaphragm seal 30 that deposited (welding), silicon directly engage, the solid joint of anodic bonding and so on etc. directly bonding method engage (bonding).
In the present embodiment, these first junction films 251 and second junction film 252 have and described first junction film 151 and the identical engagement function (cementability) of second junction film 152.
That is, first junction film 251 and second junction film 252 comprise respectively: contain the siloxanes (key of Si-O), and have the Si skeleton of random atomic structure and at the disengaging base of this Si skeleton combination.
Also have, this first junction film 251 and second junction film 252 be respectively by giving energy, makes to break away from base and break away from from the Si skeleton, the cementability, bonded substrate 20 and the diaphragm seal 30 that utilize the surface of the surface of first junction film 251 and second junction film 252 to demonstrate.
Also have,, describe in detail with described first junction film 151 and second junction film 152 1 back that coexists about first junction film 251 and second junction film 252.
Upper surface at diaphragm seal 30 engages (bonding) oscillating plate 40 via first junction film 351 and second junction film 352.
As the material that constitutes oscillating plate 40, for example, can enumerate aforesaid silicon materials, metal material, glass material, ceramic material, material with carbon element, resin material or make up one or more composite etc. of these each materials.Also have, engage diaphragm seal 30 reliably by oscillating plate 40, the distortion that will produce at piezoelectric element 50 is changed reliably to the volume-variation that the displacement of diaphragm seal 30 promptly respectively sprays liquid storeroom 21.
Wherein, preferred silicon materials of the constituent material of oscillating plate 40 or stainless steel.Such material can be with the high speed strain.Therefore, make oscillating plate 40 displacements, the volume of ejection liquid storeroom 21 is out of shape at a high speed by piezoelectric element 50.Its result can spray black liquid with high accuracy.
Engage such oscillating plate 40 and and first junction film 351 of diaphragm seal 30 and second junction film 352 so long as can adhering and sealing sheet 30 and the film of oscillating plate 40, just can constitute by material arbitrarily, each constituent material according to diaphragm seal 30 or oscillating plate 40 is suitably selected, but for example, can enumerate epoxy is that bonding agent, silicone-based bonding agent, urethane are bonding agent, scolding tin, solder of bonding agent and so on etc.
In addition, first junction film 351 and second junction film 352 do not need certain setting, omit can yet.In this case, can utilize between diaphragm seal 30 and the oscillating plate 40 that deposited (welding), silicon directly engage, the solid joint of anodic bonding and so on etc. directly bonding method engage (bonding).
In the present embodiment, these first junction films 351 and second junction film 352 have and described first junction film 151 and the identical engagement function (cementability) of second junction film 152.
That is, first junction film 351 and second junction film 352 comprise respectively: contain the siloxanes (key of Si-O), and have the Si skeleton of random atomic structure and at the disengaging base of this Si skeleton combination.
Also have, this first junction film 351 and second junction film 352 break away from base and break away from from the Si skeleton respectively by giving energy, and the cementability that utilizes the surface of the surface of first junction film 351 and second junction film 352 to show engages diaphragm seal 30 and oscillating plate 40.
Also have,, describe in detail with described first junction film 151 and second junction film 152 1 back that coexists about first junction film 351 and second junction film 352.
In addition, in the present embodiment, the duplexer that utilizes stacked diaphragm seal 30 and oscillating plate 40 to form constitute sealing plate, but the sealing plate can be one deck, also can be made of the folded layer by layer duplexer that forms more than three layers.
Also have, the duplexer that forms at stacked layer more than three layers constitutes under the situation of sealing plate, adjacent at least one group interlayer in the layer in the duplexer is as long as engaged by first junction film 351 and second junction film 352, and the dimensional accuracy of duplexer is just high, even can improve a dimensional accuracy of 1.
Via the first junction film 451a and the second junction film 452a, engage (bonding) piezoelectric element 50 (vibrating mechanism) near the part (in Fig. 2, the central portion of the upper surface of oscillating plate 40) of the upper surface of oscillating plate 40.
Piezoelectric element 50 comprises: piezoelectric body layer 51 that is made of piezoelectric and the duplexer that applies the electrode film 52 of voltage to this piezoelectric body layer 51.In such piezoelectric element 50, by applying voltage to piezoelectric body layer 51, in the distortion (contrary piezoelectric effect) of piezoelectric body layer 51 generations corresponding to voltage via electrode film 52.This distortion is given deflection (vibration) to oscillating plate 40 and diaphragm seal 30, makes the variation distortion of ejection liquid storeroom 21.Like this, be engaged in oscillating plate 40 reliably by piezoelectric element 50, can be with the distortion that produces at piezoelectric element 50 reliably to the displacement of oscillating plate 40 and diaphragm seal 30 even respectively spray the volume-variation conversion of liquid storeroom 21.
In addition, the stacked direction of piezoelectric body layer 51 and electrode film 52 does not limit especially, but can also can be the direction of quadrature for the direction parallel with oscillating plate 40.Also have, the stacked direction of piezoelectric body layer 51 and electrode film 52 be under the situation of direction of quadrature with respect to oscillating plate 40, and the piezoelectric element 50 that disposes like this is called MLP (Multi Layer Piezo) especially.If piezoelectric element 50 is MLP, then can increase the addendum modification of oscillating plate 40, therefore, have the big advantage of the amplitude of accommodation of the spray volume of black liquid.
In piezoelectric element 50 with the second junction film 452a in abutting connection with the face of (contact) according to the collocation method of piezoelectric element 50 and different, but can be for the face that exposes piezoelectric body layer, expose the face of electrode film or expose piezoelectric body layer and any of the face of electrode film.
As the material that constitutes the piezoelectric body layer 51 in the piezoelectric element 50, for example, can enumerate barium titanate, lead zirconates, lead zirconate titanate, zinc oxide, aluminium nitride, lithium tantalate, lithium niobate, crystal etc.
On the other hand, as the material that constitutes electrode film 52, for example, can enumerate Fe, Ni, Co, Zn, Pt, Au, Ag, Cu, Pd, Al, W, Ti, Mo or contain these various metal materials such as alloy.
Engage the first junction film 451a of such piezoelectric element 50 and oscillating plate 40 and the second junction film 452a so long as can engage or the film of bonding oscillating plate 40 and piezoelectric element 50, just can constitute by material arbitrarily, each constituent material according to oscillating plate 40 or piezoelectric element 50 is suitably selected, but for example, can enumerate epoxy is that bonding agent, silicone-based bonding agent, urethane are bonding agent, scolding tin, solder of bonding agent and so on etc.
In addition, the first junction film 451a and the second junction film 452a do not need certain setting, omit can yet.In this case, can utilize between oscillating plate 40 and the piezoelectric element 50 that deposited (welding), silicon directly engage, the solid joint of anodic bonding and so on etc. directly bonding method engage (bonding).
In the present embodiment, these the first junction film 451a and the second junction film 452a have and described first junction film 151 and the identical engagement function (cementability) of second junction film 152.
That is, the first junction film 451a and the second junction film 452a comprise respectively: contain the siloxanes (key of Si-O), and have the Si skeleton of random atomic structure and at the disengaging base of this Si skeleton combination.
Also have, this first junction film 451a and the second junction film 452a break away from base and break away from from the Si skeleton respectively by giving energy, and the cementability that utilizes the surface of the surface of the first junction film 451a and the second junction film 452a to show engages oscillating plate 40 and piezoelectric element 50.
Also have, about the first junction film 451a and the second junction film 452a, with the back narration that coexists of described first junction film 151 and second junction film 152 1.
At this, described oscillating plate 40 has: the recess 53 that forms ring-type in the mode of surrounding the position corresponding with piezoelectric element 50.That is, in the position corresponding with piezoelectric element 50, the part of oscillating plate 40 is island across this annular recessed portion 53 is isolated.
Also have, the first junction film 451a and the second junction film 452a are arranged at the inboard of annular recessed portion 53 respectively.
In addition, the electrode film 52 of piezoelectric element 50 is electrically connected on not shown drive IC.Thus, can utilize the action of drive IC control piezoelectric element 50.
In addition, the part at the upper surface of oscillating plate 40 engages (bonding) box head 60 via the first junction film 451b and the second junction film 452b.Like this, engage with oscillating plate 40 reliably, can strengthen the so-called cavity part that the duplexer by nozzle plate 10, substrate 20, diaphragm seal 30 and oscillating plate 40 constitutes, can suppress the distortion of cavity part or perk etc. reliably by box head 60.
As the material that constitutes box head 60, for example, can enumerate aforesaid silicon materials, metal material, glass material, ceramic material, material with carbon element, resin material or make up one or more composite etc. of these each materials.
Wherein, the constituent material of box head 60, for example, modified polyphenylene ether resin of preferred polyphenylene sulfide (PPS), assorted dragon (ザ イ ロ Application) and so on (" an assorted dragon " is registration mark) or stainless steel.These materials possess sufficient rigidity, therefore, are suitable as the constituent material of the box head 60 of supporting head 1.
Engage the first junction film 451b of such box head 60 and oscillating plate 40 and the second junction film 452b so long as can engage or the film of bonding oscillating plate 40 and box head 60, just can constitute by material arbitrarily, suitably select according to each constituent material of oscillating plate 40 or box head 60, but for example, can enumerate epoxy is that bonding agent, silicone-based bonding agent, urethane are bonding agent, scolding tin, solder of bonding agent and so on etc.
In addition, the first junction film 451b and the second junction film 452b needn't necessarily be provided with, and omit also can.In this case, can utilize between oscillating plate 40 and the box head 60 that deposited (welding), silicon directly engage, the solid joint of anodic bonding and so on etc. directly bonding method engage (bonding).Engage (bonding).
In the present embodiment, these the first junction film 451b and the second junction film 452b have and first junction film 151 and the identical engagement function (cementability) of second junction film 152.
That is, the first junction film 451b and the second junction film 452b comprise respectively: contain the siloxanes (key of Si-O), and have the Si skeleton of random atomic structure and at the disengaging base of this Si skeleton combination.
Also have, this first junction film 451b and the second junction film 452b break away from base and break away from from the Si skeleton respectively by giving, and the cementability that utilizes the surface of the surface of the first junction film 451b and the second junction film 452b to show engages oscillating plate 40 and box head 60.
Also have,, describe in detail with described first junction film 151 and second junction film 152 1 back that coexists about the first junction film 451b and the second junction film 452b.
In addition, each junction film 251,252, diaphragm seal 30, each junction film 351,352, oscillating plate 40 and junction film 451b, 452b have through hole 23 in the position corresponding with ejection liquid supply chamber 22.By this through hole 23, supply with road 61 and 22 connections of ejection liquid supply chamber at the ejection liquid that box head 60 is provided with.Also have, supply with road 61 and ejection liquid supply chamber 22, constitute a part as the reservoir 70 of common black liquid chamber performance function from black liquid to a plurality of ejection liquid storerooms 21 that supply with by ejection liquid.
In such 1, never illustrated outside ejection has feed mechanism to be taken into black liquid, from reservoir 70 to nozzle bore till 11, behind black liquid filling inside, be used to the tracer signal of self-driven IC, operation sprays the corresponding piezoelectric element separately 50 of liquid storeroom 21 with each.Thus, utilize the contrary piezoelectric effect of piezoelectric element 50, produce deflection (vibration) at oscillating plate 40 and diaphragm seal 30.Its result, for example, each sprays under the situation that the volumes in the liquid storeroom 21 shrink, and each pressure moment that sprays in the liquid storeroom 21 uprises, and from nozzle bore 11 black liquid is extruded (ejection) as drop.
Like this, in 1, by applying voltage via the piezoelectric element 50 of drive IC to the position of desire printing, i.e. input ejection signal successively, text printout image etc. arbitrarily.
Also have, 1 is not limited to aforesaid structure, for example, also can replace the head of the structure (hot mode) of piezoelectric element 50 with heater for as vibrating mechanism.Head like this constitutes, and by with heater heated ink liquid, makes its boiling, improves the pressure in the ejection liquid storeroom thus, thereby black liquid is sprayed as drop from nozzle bore 11.
And then, as other examples of vibrating mechanism, can enumerate electrostatic actuators mode etc.
Also have,, can easily be controlled at the degree of the deflection of oscillating plate 40 and diaphragm seal 30 generations by as present embodiment, constituting vibrating mechanism by piezoelectric element.Thus, can easily control the size of black liquid.
Secondly, the common junction film that uses in each junction film 151,152, each junction film 251,252, each junction film 351,352, each junction film 451a, 452a and each junction film 451b, 452b is described.Also have, below, be that representative describes with first junction film 151 that on substrate 20, forms.
First junction film 151 give before the energy state as shown in Figure 4, comprising: contain the siloxanes (key 303 of Si-O), and have the Si skeleton 301 of random atomic structure and at the disengaging base 303 of these Si skeleton 301 combinations.
Also have, if give energy to this first junction film 151, then as shown in Figure 5, the disengaging base 303 of a part breaks away from from Si skeleton 301, and replacing produces active hand (active hand) 304.Thus, show cementability on the surface of first junction film 151.First junction film 151, bonded substrate 20 and nozzle plate 10 by such demonstration cementability.
First junction film 151 like this is owing to contain siloxane bond 302, and has the influence of the Si skeleton 301 of random atomic structure, forms the firm film that is difficult to be out of shape.Therefore, can keep distance between substrate 20 and the nozzle plate 10 consistently, can strictly control each volume that respectively sprays liquid storeroom 21 or ejection liquid supply chamber 22 with high dimensional accuracy.Its result can make a plurality of volume homogeneous that respectively spray between the liquid storeroom 21 that are provided with in 1, can make from the size of the black drop of each nozzle bore 11 ejections consistent.In addition, can strictly control the fixed angle of nozzle plate 10, therefore, the emission direction of black drop can be remained constant.Therefore, can improve quality based on the lettering of ink-jet printer 9.In addition, making under a plurality of 1 the situation, can suppress 1 each a inequality of lettering quality, therefore, can suppress the individual difference of the lettering quality of ink-jet printer 9.
In addition, by using first junction film 151, the problem that bonding agent oozes out under the situation of bonding agent does not take place to use in bonded substrate 20 and nozzle plate 10 in the past.Thereby, can avoid the bonding agent that oozes out to stop up the situation of the stream of the black liquid in 1.In addition, also has the advantage that to economize the labour who removes the bonding agent that oozes out.
In addition, first junction film 151 is by the effect of aforesaid firm Si skeleton 301, and resistance to chemical reagents is superior.Therefore, even first junction film, 151 long term exposure in black liquid, also can prevent to go bad, deterioration, can guarantee the joint (bonding) of substrate 20 and nozzle plate 10 for a long time.That is,, can guarantee the close property of liquid of 1 fully according to first junction film 151, therefore, can provide reliability high 1.
And then first junction film 151 is by the effect of the Si skeleton 301 of chemical stabilization, superior for heat resistance.Therefore, even 1 be exposed under the high temperature, also can prevent rotten, the deterioration of first junction film 151 reliably.
In addition, the first such junction film 151 forms the solid shape with flowability.Therefore, compare with in the past have mobile liquid state or mucus shape bonding agent, the thickness or the shape of adhesive linkage (first junction film 151) change hardly.Therefore, 1 the dimensional accuracy of using that first junction film 151 makes is compared with the past to become very high.And then, do not need required time of curing of bonding agent, therefore, can carry out firm joint at short notice.
As the first such junction film 151, especially preferably remove the adding up to about 10～90 atom % of containing ratio of the containing ratio of Si atom the atom of H atom and O atom, more preferably 20～80 atom % from the total atom that constitutes first junction film 151.If Si atom and O atom contain with the containing ratio of described scope, then with regard to first junction film 151, Si atom and O atom form firm network, and first junction film 151 self forms more firm.In addition, described first junction film 151 especially shows high bond strength with respect to substrate 20 and nozzle plate 10.
In addition, the Si atom in first junction film 151 and the existence of O atom than preferred 3:7～7:3 about, more preferably about 4:6～6:4.By with the existence of Si atom and O atom than being set in the described scope, the stability of first junction film 151 uprises, more firmly bonded substrate 20 and nozzle plate 10.
Also have, the crystallization degree of the Si skeleton 301 in first junction film 151 is preferred below 45%, more preferably below 40%.Thus, Si skeleton 301 contains random fully atomic structure.Therefore, the characteristic of described Si skeleton 301 is significantly changed, and the dimensional accuracy and the cementability of first junction film 151 are more superior.
In addition, first junction film 151 preferably contains Si-H key in its structure.This Si-H key is when silane utilizes Plasma Polymerization to carry out polymerisation, generates in polymer, but thinks that at this moment, the create-rule ground that Si-H key hinders siloxane bond carries out.Therefore, siloxane bond forms in the mode of avoiding Si-H key, reduces the systematicness of the atomic structure of Si skeleton 301.Like this, according to Plasma Polymerization, can efficient form the low Si skeleton 301 of crystallization degree well.
On the other hand, not that the containing ratio of the Si-H key in first junction film 151 is many more, the crystallization degree is low more.Specifically, in the infrared absorption spectrum of first junction film 151, the peak intensity that belongs to siloxane bond was made as 1 o'clock, belonged to the peak intensity preferred about 0.001～0.2 of Si-H key, more preferably about 0.002～0.05, and then preferred about 0.005～0.02.By with respect to the ratio of the siloxane bond of Si-H key in described scope, the atomic structure of first junction film 151 is the most random comparatively speaking.Therefore, under the peak intensity of Si-H key with respect to the peak intensity of siloxane bond was situation in the described scope, the bond strength of first junction film 151, resistance to chemical reagents and dimensional accuracy were especially superior.
In addition, the disengaging base 303 that is combined in Si skeleton 301 by breaking away from from Si skeleton 301, makes to produce active hand 304 at first junction film 151 as mentioned above.Thereby, by giving energy to breaking away from base 303, fairly simple ground and breaking away from equably, but need be incorporated into Si skeleton 301 reliably when not giving energy, not break away from.
From described viewpoint, break away from preferred use of base 303 and comprise being selected from and be atom or contain these each atoms and at least a disengaging base of the group that atomic group that these each atoms are configured to combine with Si skeleton 301 constitutes by H atom, B atom, C atom, N atom, O atom, P atom, S atom and halogen.The selectivity ratios of the combination/disengaging of giving that utilizes energy of described disengaging base 303 is more superior.Therefore, such disengaging base 303 can satisfy aforesaid necessity fully, and the cementability that can make first junction film 151 is height more.
Also have, be configured to the atomic group (group) that combines with Si skeleton 301 as above-mentioned each atom, for example, can enumerate the alkylene, aldehyde radical, ketone group, carboxyl, amino, amide groups, nitro, halogenated alkyl, sulfydryl, sulfonic group, cyano group, NCO etc. of the alkyl, vinyl, pi-allyl and so on of methyl, ethyl and so on.
Wherein, break away from especially preferred alkyl of base 303.The chemical stability height of alkyl, therefore, the against weather and the resistance to chemical reagents of first junction film 151 that comprises alkyl is superior.
At this, breaking away from base 303 is methyl (-CH 3) situation under, its preferred containing ratio is defined as follows according to the peak intensity in the infrared absorption spectrum.
That is, in the infrared absorption spectrum of first junction film 151, the peak intensity that belongs to siloxane bond was made as 1 o'clock, belonged to the peak intensity preferred about 0.05～0.45, more preferably about 0.1～0.4, and then preferred about 0.2～0.3 of methyl.The peak intensity of methyl by with respect to the ratio of the peak intensity of siloxane bond in described scope, prevent that methyl is with the necessary above generation that hinders siloxane bond, simultaneously, in first junction film 151, generate the active hand of necessary and sufficient quantity, therefore, produce sufficient cementability at first junction film 151.In addition, show sufficient against weather and the resistance to chemical reagents that methyl causes at first junction film 151.
As the constituent material of first junction film 151, for example, can enumerate the polymer that contains siloxane bond of polysiloxane and so on etc. with such feature.
First junction film 151 that is made of polysiloxane himself has superior mechanical property.In addition, with respect to wide variety of materials, show especially superior cementability.Thereby first junction film 151 that is made of polysiloxane is bonded substrate 20 and nozzle plate 10 more firmly.
In addition, polysiloxane shows hydrophobicity (non-cementability) usually, but by giving energy, the disengaging base is easily broken away from, be changed to hydrophily, show cementability, but have the advantage of can be easily and carrying out the control of this non-cementability and cementability reliably.
Also have, this hydrophobicity (non-cementability) mainly is to be contained in the effect that the alkyl in the polysiloxane causes.Thereby first junction film 151 that is made of polysiloxane also has in the zone that is being endowed energy and shows cementability, and, in the zone that is not endowed energy, obtain the advantage of the superior lyophobicity that aforesaid alkyl causes.Thereby, the zone of giving energy by control, can be at first junction film 151 show superior lyophobicities with substrate 20 and nozzle plate 10 discontiguous zones.Its result, first junction film 151 for example can provide at 1 o'clock that makes the industrial ink-jet printer that uses the organic system China ink liquid that corrodes resin material easily, the reliability of superior durability high 1.
In addition, in polysiloxane, especially preferably the polymer with octamethyltrisiloxane is a principal component.The cementability of first junction film 151 that with the polymer of octamethyltrisiloxane is principal component is especially superior, therefore, can especially be fit to be applicable in the droplet discharging head of the present invention.In addition, be that the raw material of principal component is in a liquid state at normal temperatures with the octamethyltrisiloxane, have the viscosity of appropriateness, therefore, also have the advantage of processing ease.
In addition, about the preferred 1～1000nm of the average thickness of first junction film 151, more preferably about 2～800nm.Be made as in the described scope by average thickness, can prevent that the dimensional accuracy between substrate 20 and the nozzle plate 10 from significantly reducing, simultaneously, can engage these more firmly first junction film 151.
That is, under the situation of the average thickness of first junction film 151 less than described lower limit, may can not get sufficient joint strength.On the other hand, under the situation of the average thickness of first junction film 151 greater than described higher limit, possible 1 dimensional accuracy significantly reduces.
And then, if the average thickness of first junction film 151 is in the described scope, then guarantee the product having shape-following-up properties to a certain degree of first junction film 151.Therefore, for example, exist under the concavo-convex situation, also depend on described concavo-convex height, but can make 151 linings of first junction film, make it follow concavo-convex shape on the composition surface of substrate 20 (with the face of first junction film, 151 adjacency).Its result, first junction film 151 can absorb concavo-convex, can relax the concavo-convex height that produces on its surface.Also have, when applying possesses the substrate 20 of first junction film 151 and nozzle plate 10, can improve the adhesiveness with respect to nozzle plate 10 of first junction film 151.
Also have, the degree of aforesaid product having shape-following-up properties is that the thickness of first junction film 151 is thick more, and is remarkable more.Thereby in order to guarantee product having shape-following-up properties fully, the thickness that as far as possible increases by first junction film 151 gets final product.
First junction film 151 like this can be made by any method, can become embrane method or various liquid phase to become the film of making such as embrane method to give energy to the various gas phases by Plasma Polymerization, CVD method, PVD method and so on makes, but wherein, give preceding film as energy, the preferred film of making by Plasma Polymerization that uses.According to Plasma Polymerization as can be known, finally can efficient make densification and uniform first junction film 151 well.Thus, first junction film of making by Plasma Polymerization 151 bonded substrate 20 and nozzle plate 10 especially securely.And then, to make by Plasma Polymerization, first junction film 151 before energy is given can be kept during long and be endowed energy and the state of activate.Therefore, can realize simplification, the efficient activity of 1 manufacturing process.
Also have,, first junction film 151 is described at this, but also identical about second junction film 152 with first junction film 151.
In addition, in the present embodiment, substrate 20 and diaphragm seal 30 engage via first junction film 251 and second junction film 252, and therefore, the adhesiveness between these uprises, and especially can improve the close property of liquid that respectively sprays liquid storeroom 21 or ejection liquid supply chamber 22.
In addition, in the present embodiment, diaphragm seal 30 and oscillating plate 40 engage via first junction film 351 and second junction film 352, and therefore, adhesiveness between these and transmission property uprise.Therefore, the distortion of piezoelectric element 50 can be deformed into reliably the pressure that respectively sprays liquid storeroom 21 changes.That is, can improve the response of the displacement of diaphragm seal 30 and oscillating plate 40.
In addition, in the present embodiment, oscillating plate 40 and piezoelectric element 50 engage via the first junction film 451a and the second junction film 452a, and therefore, the adhesiveness between these and the transmission of distortion uprise.In the past, utilize bonding piezoelectric element of bonding agent and oscillating plate, therefore, the problem of the distortion that has piezoelectric element decay before making the oscillating plate distortion etc., but, the distortion of piezoelectric element 50 can be converted to reliably the pressure that respectively sprays liquid storeroom 21 and change according to the first junction film 451a and the second junction film 452a.
In addition, in the present embodiment, oscillating plate 40 and box head 60 engage via the first junction film 451b and the second junction film 452b, and therefore, the adhesiveness between these uprises.Therefore, utilize box head 60 to support oscillating plate 40 reliably, can prevent the distortion of oscillating plate 40, diaphragm seal 30, substrate 20 and nozzle plate 10 or perk etc. reliably.
Below, as an example, to utilizing Plasma Polymerization, the method that goes up the method for making first junction film 151 and comprise the making 1 of this method at mother metal 20 ' describes.
Fig. 6～Fig. 9 is the figure (longitudinal sectional drawing) that is used to illustrate the manufacture method of ink jet recording head.Also have, in the following description, the upside among Fig. 6～Fig. 9 is called " on ", downside is called D score.
1 manufacture method of present embodiment comprises: go up at mother metal 20 ' and form first junction film 251, and, lower surface at diaphragm seal 30 forms second junction film 252, engages the operation of mother metal 20 ' and diaphragm seal 30 via this first junction film 251 and second junction film 252; On diaphragm seal 30, form first junction film 351, and, form second junction film 352 at the lower surface of oscillating plate 40, engage the operation of diaphragm seals 30 and oscillating plate 40 via this first junction film 351 and second junction film 352; Part at each junction film 251,252, diaphragm seal 30, each junction film 351,352 and oscillating plate 40 forms through hole 23, and, in the operation of the part of oscillating plate 40 formation recess 53; On oscillating plate 40, form the first junction film 451a, and, form the second junction film 452a at the lower surface of piezoelectric element 50, engage the operation of oscillating plate 40 and piezoelectric element 50 via this first junction film 451a and the second junction film 452a; On oscillating plate 40, form the first junction film 451b, and, form the second junction film 452b at the lower surface of box head 60, engage the operation of oscillating plate 40 and box head 60 via this first junction film 451b and the second junction film 452b; Mother metal 20 ' is implemented processing, form the operation of substrate 20; On the face of the side opposite of substrate 20, form first junction film 151 with diaphragm seal 30, and, second junction film 152 formed at the lower surface of nozzle plate 10, via the operation of this first junction film 151 and second junction film, 152 bonded substrates 20 and nozzle plate 10.
Below, each operation is described successively.
[1] at first, as the mother metal that is used to make substrate 20, prepare mother metal 20 '.Mother metal 20 ' can become substrate 20 by implement processing in operation described later.
Secondly, shown in Fig. 6 (a), go up first junction film 251 that forms the state before giving energy at mother metal 20 '.The formation method of this first junction film 251 is identical with the formation method of first junction film 151 described later.
[2] secondly, give energy to first junction film 251.Thus, show cementability at first junction film 251.Also have, can be undertaken by the identical method of adding method of the energy to first junction film 151 described later giving of the energy of first junction film 251.
[3] secondly, prepare diaphragm seal 30.
Secondly, the lower surface at diaphragm seal 30 forms second junction film 252.The formation method of this second junction film 252 also formation method with first junction film 151 described later is identical.
Secondly, give energy to second junction film 252.Thus, show cementability at second junction film 252.
Also have, so that show first junction film 251 of cementability and the mode that second junction film 252 adheres to, applying mother metal 20 ' and diaphragm seal 30.Thus, shown in Fig. 6 (b), mother metal 20 ' and diaphragm seal 30 engage (bonding) via first junction film 251 and second junction film 252.
[4] secondly, shown in Fig. 6 (c), on diaphragm seal 30, form first junction film 351 of the state before giving energy.The formation method of this first junction film 351 is identical with the formation method of first junction film 151 described later.
[5] secondly, give energy to first junction film 351.Thus, show cementability at first junction film 351.Also have, can be undertaken by the method identical with the adding method of the energy to first junction film 151 described later to giving of the energy of first junction film 351.
[6] secondly, prepare oscillating plate 40.
Secondly, the lower surface at oscillating plate 40 forms second junction film 352.The formation method of this second junction film 352 also formation method with second junction film 352 described later is identical.
Secondly, give energy to second junction film 352.Thus, show cementability at second junction film 352.
Also have, so that show first junction film 351 of cementability and the mode that second junction film 352 adheres to, the mother metal 20 ' and the oscillating plate 40 of fitting and possessing diaphragm seal 30.Thus, diaphragm seal 30 and oscillating plate 40 engage (bonding) via first junction film 351 and second junction film 352.Its result shown in Fig. 6 (d), engages mother metal 20 ', diaphragm seal 30 and oscillating plate 40.
[7] secondly, shown in Fig. 6 (e), position corresponding with 1 ejection liquid supply chamber 22 in each junction film 251,252, diaphragm seal 30, each junction film 351,352 and oscillating plate 40 forms through hole 23.
In addition, in oscillating plate 40, surround the annular section formation recess 53 of the position of assembling piezoelectric element 50.
The formation of through hole 23 and recess 53 can be used in combination one or more in chemical method for etching such as physical etch method, Wet-type etching such as dry-etching, reactive ion etching, beam etching, light assisted etch etc.
[8] secondly, shown in Fig. 6 (f), the position of the assembling piezoelectric element 50 on oscillating plate 40 forms the first junction film 451a of the state before giving energy.The formation method of this first junction film 451a also formation method with first junction film 151 described later is identical.
Also have, form under the situation of the first junction film 451a, for example,, the first junction film 451a film forming is got final product by having the mask with the window portion of the regional corresponding shape that should form the first junction film 451a in the part zone on the oscillating plate 40.
[9] secondly, give energy to the first junction film 451a.Thus, show cementability at the first junction film 451a.Also have, can be undertaken by the method identical with the adding method of the energy to first junction film 151 described later to giving of the energy of the first junction film 451a.
[10] secondly, prepare piezoelectric element 50.
Secondly, the lower surface at piezoelectric element 50 forms the second junction film 452a.The formation method of this second junction film 452a also formation method with first junction film 151 described later is identical.
Secondly, give energy to the second junction film 452a.Thus, show cementability at the second junction film 452a.
Also have, so that show first junction film 451a of cementability and mode, applying oscillating plate 40 and the piezoelectric element 50 that the second junction film 452a adheres to.Thus, oscillating plate 40 and piezoelectric element 50 engage (bonding) via the first junction film 451a and the second junction film 452a.Its result shown in Fig. 7 (g), engages mother metal 20 ', diaphragm seal 30, oscillating plate 40 and piezoelectric element 50.
[11] secondly, shown in Fig. 7 (h), the position of the assembling box head 60 on oscillating plate 40 forms the first junction film 451b of the state before giving energy.The formation method of this first junction film 451b is identical with the formation method of aftermentioned first junction film 151.
Also have, form at the regional area on the oscillating plate 40 under the situation of the first junction film 451b, for example,, the first junction film 451b film forming is got final product by having the mask with the window portion of the regional corresponding shape that should form the first junction film 451b.
[12] secondly, give energy to the first junction film 451b.Thus, at the cementability of first junction film 451b demonstration with box head 60.Also have, can be undertaken by the identical method of adding method of the energy to first junction film 151 described later giving of the energy of the first junction film 451b.
[13] secondly, prepare box head 60.
Secondly, the lower surface at box head 60 forms the second junction film 452b.The formation method of this second junction film 452b also formation method with first junction film 151 described later is identical.
Secondly, give energy to the second junction film 452b.Thus, show cementability at the second junction film 452b.
Also have, so that show first junction film 451b of cementability and mode, applying oscillating plate 40 and the box head 60 that the second junction film 452b adheres to.Thus, oscillating plate 40 and box head 60 engage (bonding) via the first junction film 451b and the second junction film 452b.Its result shown in Fig. 7 (i), engages mother metal 20 ', diaphragm seal 30, oscillating plate 40, piezoelectric element 50 and box head 60.
[14] secondly, the turned upside down of the mother metal 20 ' of diaphragm seal 30, oscillating plate 40, piezoelectric element 50 and box head 60 will have been engaged.Also have, the face of the side opposite with diaphragm seal 30 of mother metal 20 ' is implemented processing, form and respectively spray liquid storeroom 21 and ejection liquid supply chamber 22.Thus, obtain substrate 20 (with reference to Fig. 8 (j)) by mother metal 20 '.In addition, ejection liquid supply chamber 22 makes the through hole 23 that forms, and supplies with road 61 at the ejection liquid that box head 60 is provided with and be communicated with on each junction film 251,252, diaphragm seal 30, each junction film 351,352 and oscillating plate 40, form reservoir 70.
The processing method of mother metal 20 ' for example can be used aforesaid various etching method.
Also have, at this, to by the mother metal 20 ' that has engaged diaphragm seal 30, oscillating plate 40, piezoelectric element 50 and box head 60 is implemented processing, form the situation that respectively sprays liquid storeroom 21 and ejection liquid supply chamber 22 and describe, setting respectively sprays liquid storeroom 21 and ejection liquid supply chamber 22 also can but go up at mother metal 20 ' in advance under the time point of described operation [1].
[15] secondly, engagement nozzle plate 10 on the face of the side opposite of substrate 20 with diaphragm seal 30.Below, the method for bonded substrate 20 and nozzle plate 10 is described in detail.
At first, on the substrate 20 that has engaged diaphragm seal 30, oscillating plate 40, piezoelectric element 50 and box head 60, utilize Plasma Polymerization, form first junction film 151 of giving the preceding state of energy.Plasma Polymerization is for example by the mist of base feed gas and carrier gas in highfield, makes the molecule aggregation in the unstrpped gas, and polymer buildup on substrate 20, is obtained the method for film.
Below, the method of utilizing Plasma Polymerization to form first junction film 151 is described in detail, but at first, illustrate before the formation method of first junction film 151 that the plasma polymerization that uses when utilizing Plasma Polymerization to make first junction film 151 describes on substrate 20.Then, the formation method to first junction film 151 describes.
Figure 10 is the longitudinal sectional drawing of the plasma polymerization that uses in the making of the junction film that possesses with the ink jet recording head that schematically shows in present embodiment.Also have, in the following description, the upside among Figure 10 is called " on ", downside is called D score.
Plasma polymerization 100 shown in Figure 10 possesses: chamber 101; First electrode 130 of supporting substrates 20; Second electrode 140; Between each electrode 130,140, apply the power circuit 180 of high frequency voltage; The gas supply part 190 of supply gas in chamber 101; Discharge the exhaust pump 170 of the gas in the chamber 101.In these each ones, first electrode 130 and second electrode 140 are arranged in the chamber 101.Below, each one is at length described.
Chamber 101 is the airtight containers that can keep inner, inside is made as decompression (vacuum) state and uses, and therefore, has the withstand voltage properties that can stand inside and outside pressure differential.
Chamber 101 as shown in figure 10 comprises: the circular side wall of the circular side wall of the roughly cylindrical circular chamber body of axis along continuous straight runs configuration, the left side peristome of sealed chamber's main body and sealing right openings portion.
Above chamber 101, be provided with supply port 103, below be provided with exhaust outlet 104.Also have, connect gas supply part 190, connect exhaust pump 170 at exhaust outlet 104 at supply port 103.
Also have, in the present embodiment, chamber 101 is made of the high metal material of electric conductivity, via earth connection 102 electric aspect ground connection.
First electrode 130 is tabular, supporting substrates 20.
Along the vertical setting, thus, first electrode 130 is via chamber 101 electric aspect ground connection at the internal face of the sidewall of chamber 101 for this first electrode 130.Also have, first electrode 130 is set to and the concentric shape of chamber body as shown in figure 10.
Face at the supporting substrates 20 of first electrode 130 is provided with electrostatic chuck (adsorbing mechanism) 139.
As shown in figure 10, by this electrostatic chuck 139, substrate 20 can be supported along vertical.In addition, even how many perks is arranged, also, can substrate 20 be supplied in the plasma treatment with the state of correcting described perk by being adsorbed in electrostatic chuck 139 at substrate 20.
Second electrode 140 is opposed and be provided with via substrate 20 and first electrode 130.Also have, second electrode 140 is set to from the internal face of the sidewall of chamber 101 state away from (being insulated).
Connect high frequency electric source 182 at this second electrode 140 via distribution 184.In addition, be provided with matching box (adaptation) 183 midway at distribution 184.By these distributions 184, high frequency electric source 182 and matching box 183, constitute power circuit 180.
Be grounded according to such power circuit 180, the first electrodes 130, therefore, between first electrode 130 and second electrode 140, apply high frequency voltage.Thus, in the gap of first electrode 130 and second electrode 140, cause towards passing through the inverted electric field of high frequency.
Gas supply part 190 is supplied with the gas of regulation in chamber 101.
Gas supply part 190 shown in Figure 10 has: the liquid reservoir 191 of storing liquid film material (material liquid); Membrane material gasification with liquid state is changed to the gasification installation 192 of gaseous state with it; Store the gas container 193 of carrier gas.In addition, the supply port 103 of these each ones and chamber 101 is connected by pipe arrangement 194 respectively, and the membrane material (unstrpped gas) of gaseous state and the mist of carrier gas are supplied with in chamber 101 from supply port 103.
Become by plasma polymerization 100 polymerization and form the raw material of polymeric membrane on the surface of substrate 20 at liquid reservoir 191 stored liquid membrane materials.
The membrane material of such liquid state is gasified by gasification installation 192, becomes gas film material (unstrpped gas), is supplied in the chamber 101.Also have,, describe in detail in the back about unstrpped gas.
The carrier gas of storing at gas container 193 is for by the effect of electric field discharge, and keeps this discharge and the gas that imports.As such carrier gas, for example, can enumerate Ar gas, He gas etc.
In addition, the supply port in chamber 101 103 near be provided with diffuser plate 195.
Diffuser plate 195 has the function that promotion is supplied in the diffusion of the mist in the chamber 101.Thus, mist can be with the roughly concentration dispersion of homogeneous in chamber 101.
The gas that exhaust pump 170 is discharged in the chamber 101 for example, is made of oil rotary pump, turbomolecular pump etc.By gases in such discharge chamber 101 and decompression, can be with gas plasmaization easily.In addition, can prevent pollution, oxidation of the substrate 20 that causes with contacting of air atmosphere etc., and, can in chamber 101, remove the product that plasma treatment causes effectively.
In addition, be provided with the pressure control mechanism 171 of regulating the pressure in the chamber 101 at exhaust outlet 104.Thus, the pressure in the chamber 101 is suitably set according to the operation conditions of gas supply part 190.
Secondly, the method that forms first junction film 151 on the substrate 20 that has engaged diaphragm seal 30, oscillating plate 40, piezoelectric element 50 and box head 60 is described.
[15-1] at first so that box head 60 is positioned at the mode of downside, is contained in substrate 20 in the chamber 101 of plasma polymerization 100, form sealing state after, by the operation of exhaust pump 170, will form decompression state in the chamber 101.
Secondly, operation gas supply part 190, the mist of base feed gas and carrier gas in chamber 101.The mist that is supplied to is filled in the chamber 101.
At this, the shared ratio (mixing ratio) of unstrpped gas is according to the kind of unstrpped gas and carrier gas or omit different as film forming speed of purpose etc. in the mist, but for example, preferably the ratio with the unstrpped gas in the mist is set at about 20～70%, more preferably is set at about 30～60%.Thus, can realize the optimization of condition of the formation (film forming) of polymeric membrane.
In addition, the flow of gas supplied is according to the kind of gas or as the film forming speed of purpose, thickness etc. and suitably determined, do not limit especially, but preferably the flow of unstrpped gas and carrier gas is set at respectively about 1～100ccm usually, more preferably be set at about 10～60ccm.
Secondly, operation power circuit 180 applies high frequency voltage between pair of electrodes 130,140.Thus, the molecular ionization of the gas that exists between pair of electrodes 130,140 produces plasma.By the energy of this plasma, the molecule aggregation in the unstrpped gas, polymer adhere to, are piled up on the substrate 20.Thus, shown in Fig. 8 (k), on substrate 20, form first junction film 151 that constitutes by plasma polymerization film.
In addition, by the effect of plasma, activate, clean the surface of substrate 20.Therefore, the polymer of unstrpped gas is piled up in the surface of substrate 20 easily, can carry out the stable film forming of first junction film 151.According to such Plasma Polymerization as can be known, do not depend on the constituent material of substrate 20, can further improve the adhesion strength of the substrate 20 and first junction film 151.
As unstrpped gas, for example, can enumerate the organosiloxane of methylsiloxane, octamethyltrisiloxane, decamethyl tetrasiloxane, decamethyl pentamethylene siloxanes, octamethylcy-clotetrasiloxane, methyl phenyl siloxane and so on etc.
Use plasma polymerization film that such unstrpped gas obtains promptly the material (polymer) that forms by these polymerizable raw materials of first junction film 151, be that polysiloxane constitutes.
When plasma polymerization, the frequency of the high frequency that applies between pair of electrodes 130,140 does not limit especially, but about preferred 1kHz～100MHz, more preferably about 10～60MHz.
In addition, the output density of high frequency does not limit especially, but preferred 0.01～100W/cm 2About, more preferably 0.1～50W/cm 2About, and then preferred 1～40W/cm 2About.Be located in the described scope by output density, can prevent that the output density of high frequency is too high, cause giving energy of plasma situation more than necessary, simultaneously, can form Si skeleton 301 reliably with random atomic structure to unstrpped gas with high frequency.That is, under the situation of output density less than described lower limit of high frequency, the molecule polymerization reaction take place in the unstrpped gas can not be made, first junction film 151 may not be formed.On the other hand, under the situation of output density greater than described higher limit of high frequency, because unstrpped gas decomposition etc., can become the structure that breaks away from base 303 separates from Si skeleton 301, in first junction film 151 that obtains, the containing ratio that may break away from base 303 significantly reduces, or the randomness of Si skeleton 301 reduces (systematicness uprises).
In addition, the pressure preferred 133.3 * 10 in the chamber during film forming 101 -5～1333Pa (1 * 10 -5～10Torr) about, more preferably 133.3 * 10 -4～133.3Pa (1 * 10 -4～1Torr) about
About the preferred 0.5～200sccm of unstrpped gas stream, more preferably about 1～100sccm.On the other hand, about the preferred 5～750sccm of carrier gas stream, more preferably about 10～500sccm.
Preferred about 1～10 minute of processing time is more preferably about 4～7 minutes.Also have, the thickness of first junction film 151 of film forming is main and this processing time is proportional.Thereby, only, can easily regulate the thickness of first junction film 151 by regulating this processing time.Therefore, in the past under the situation of using bonding agent adhesive base plate and nozzle plate, thickness that can not strict control bonding agent, but according to first junction film 151, the thickness of first junction film 151 can be strictly controlled, therefore, the distance of substrate 20 and nozzle plate 10 can be strictly controlled.
In addition, the temperature of substrate 20 is preferred more than 25 ℃, more preferably about 25～100 ℃.
As mentioned above, can obtain first junction film 151.
Also have, only the area part ground of engagement nozzle plate 10 forms under the situation of first junction film 151 in the upper surface of substrate 20, and for example, use has the mask with the window portion of this zone corresponding shape, from this mask first junction film, 151 film forming is got final product.
[15-2] secondly give energy to first junction film 151 that forms on substrate 20.
If give energy, then in first junction film 151, as shown in Figure 4, break away from base 303 and break away from from Si skeleton 301.Also have, after disengaging base 303 breaks away from, as shown in Figure 5, at the surface and the active hand 304 of inner generation of first junction film 151.Thus, show cementability on the surface of first junction film 151.
At this, can give by arbitrary method the energy that first junction film 151 is given, for example, can representativeness enumerate (I) to the method for first junction film, 151 irradiation energy lines, the method for (II) heating first junction film 151, (III) gives compression stress (giving physical energy) to first junction film 151 method, in addition, can enumerate exposure (giving energy of plasma) in the method for plasma, be exposed to the method for ozone gas (giving chemical energy) etc.
Wherein, as the method for giving energy to first junction film 151, at least a method in each method of especially preferred use above-mentioned (I), (II), (III).These methods can be to first junction film 151 fairly simple and efficient give energy well, therefore, be fit to as the energy adding method.
Below, each method of above-mentioned (I), (II), (III) is described in detail.
(I) under the situation of first junction film, 151 irradiation energy lines, as energy line, for example, can enumerate ultraviolet ray, laser and so on light, X line, γ line, electronics line, ion beam and so on particle line etc. or make up the energy line of these energy lines.
In these energy lines, the also especially ultraviolet ray about optimal wavelength 150～300nm (with reference to Fig. 8 (L)).According to described ultraviolet ray as can be known, therefore the energy that optimization is given, can prevent the above situation of Si skeleton 301 destroyed necessity in first junction film 151, simultaneously, can switch the key between Si skeleton 301 and the disengaging base 303 selectively.Thus, can prevent that the characteristic (mechanical property, chemical characteristic etc.) of first junction film 151 from reducing, simultaneously, can show cementability at first junction film 151.
In addition, according to ultraviolet ray, can not handle wide scope at short notice unevenly, therefore, efficient breaks away from the disengaging of base 303 well.And then ultraviolet ray for example also has can be by the advantage of simple equipment generations such as UV lamp.
Also have, ultraviolet wavelength is more preferably about 160～200nm.
In addition, under the situation of using the UV lamp, its output is according to the area of first junction film 151 and difference, but preferred 1mW/cm 2～1W/cm 2About, more preferably 5mW/cm 2～50mW/cm 2About.Also have, in this case, about the preferred 3～3000mm of spacing distance of the UV lamp and first junction film 151, more preferably about 10～1000mm.
In addition, time of degree of disengaging base 303 that preferably can break away from the near surface of first junction film 151 time of irradiation ultraviolet radiation does not promptly make time of disengaging base 303 a large amount of degree that break away from of the inside of first junction film 151.Specifically, omit according to the constituent material of ultraviolet light quantity, first junction film 151 etc. different, but preferred about 0.5～30 minute, more preferably about 1～10 minute.
In addition, ultraviolet ray Continuous irradiation in time is good, but also intermittently (pulse type) irradiation.
On the other hand, as laser, for example, can enumerate excimer laser (expense (Off エ system ト) second laser), Nd-YAG laser, Ar laser, CO 2Laser, He-Ne laser etc.
In addition, irradiation to the energy line of first junction film 151 can carried out in the atmosphere arbitrarily, specifically, can enumerate the oxidizing gas atmosphere, hydrogen and so on of atmosphere, oxygen and so on reducibility gas atmosphere, nitrogen, argon and so on inert gas atmosphere or with decompression (vacuum) atmosphere of these atmosphere decompressions etc., but especially preferably in air atmosphere, carry out.Thus, when controlled atmospher, do not need labour or cost, can carry out the irradiation of energy line more simply.
Like this,, can easily carry out selectively giving energy, therefore, for example, can prevent rotten, the deterioration of the substrate 20 that giving of energy causes first junction film 151 according to the method for irradiation energy line.
In addition, according to the method for irradiation energy line, can precision well and the size of regulating the energy of giving simply.Therefore, can regulate from the disengaging amount of the disengaging base 303 of first junction film, 151 disengagings.By the disengaging amount of such adjusting disengaging base 303, can easily control the bond strength between first junction film 151 and the nozzle plate 10.
That is,, produce more substantial active hand, therefore, can further improve the cementability that shows at first junction film 151 in the surface and the inside of first junction film 151 by increasing the disengaging amount that breaks away from base 303.On the other hand,, reduce surface and the inner active hand that produces, can be suppressed at the cementability that first junction film 151 shows at first junction film 151 by reducing the disengaging amount that breaks away from base 303.
Also have,, for example, regulate the kind of energy line, the output of energy line, the conditions such as irradiation time of energy line in order to regulate the size of the energy of giving.
And then, according to the method for irradiation energy line, can give energy at short notice, therefore, can efficient carry out giving of energy more well.
(II) under the situation of heating first junction film 151 (not shown), preferably heating-up temperature is set at about 25～100 ℃, more preferably is set at about 50～100 ℃.If, then can prevent substrate 20 grades reliably owing to heat goes bad, the situation of deterioration with the heating of the temperature of described scope, simultaneously, activate first junction film 151 reliably.
In addition, heat time heating time be so long as can cut off time of degree of the molecular link of first junction film 151 and get final product, specifically, if heating-up temperature is in the described scope, then preferred about 1～30 minute.
In addition, first junction film 151 can heat by arbitrary method and gets final product, but method that can be by using heater, shine ultrared method, the various heating means such as method that contact with flame heat.
Also have, under the coefficient of thermal expansion situation about equally of substrate 20 and nozzle plate 10, heating first junction film 151 get final product under aforesaid condition, but under the mutual different situation of the coefficient of thermal expansion of substrate 20 and nozzle plate 10, describe in detail in the back, but preferably engage at low temperatures as far as possible.By engaging at low temperatures, can further reduce the thermal stress that produces at joint interface.
(III) in the present embodiment, to before adhesive substrates 20 and nozzle plate 10, the situation of giving energy to first junction film 151 is illustrated, but giving after making substrate 20 and nozzle plate 10 overlapping of described energy carried out also can.That is, after forming first junction film 151 on the substrate 20, give before the energy, so that the mode that first junction film 151 and second junction film 152 adhere to, overlapping substrate 20 and nozzle plate 10 form interim conjugant.Also have,, show cementability, engage (bonding) substrate 20 and nozzle plate 10 via each junction film 151,152 at each junction film 151,152 by giving energy to each junction film 151,152 in this interim conjugant.
In this case, can be the method for above-mentioned (I), (II), but use the method for giving compression stress also can each junction film 151,152 to the giving of energy of each junction film 151,152 in the interim conjugant.
In this case, preferably on the approaching mutually direction of substrate 20 and nozzle plate 10 with the compression of the pressure about 0.2～10MPa, more preferably compress with the pressure about 1～5MPa.Thus,, can give the energy of appropriateness simply, show sufficient cementability at each junction film 151,152 to each junction film 151,152 only by only compression.Also have, this pressure is also harmless greater than described higher limit, but according to each constituent material of substrate 20 and nozzle plate 10, may cause substrate 20 or nozzle plate 10 that damage etc. takes place.
In addition, the time of giving compression stress does not limit especially, but preferred about 10 seconds～30 minutes.Also have, the time of giving compression stress according to the size of compression stress and suitably change get final product.Specifically, the size of compression stress is big more, can shorten the time of giving compression stress more.
Also have, under the state of interim conjugant, do not engage between substrate 20 and the nozzle plate 10, therefore, can easily regulate (staggering) these relative position.Thereby, by after obtaining interim conjugant, finely tune the relative position of substrate 20 and nozzle plate 10 temporarily, can improve 1 the assembly precision (dimensional accuracy) that finally obtains reliably.
By each method of (I), (II), (III) as mentioned above, can give energy to each junction film 151,152.
Also have, can give energy, also can but only the zone of a part is given to the whole face of each junction film 151,152.If like this, then can control the zone of the cementability demonstration of each junction film 151,152, by this regional area of suitable adjusting, shape etc., can relax the concentration of local of the stress that produces at joint interface.Thus, for example, under the big situation of the coefficient of thermal expansion of substrate 20 and nozzle plate 10, also these can be engaged reliably.
At this, as mentioned above, first junction film 151 of giving the state before the energy has Si skeleton 301 and breaks away from base 303 as shown in Figure 4.If give energy, then break away from base 303 (being methyl in the present embodiment) and break away from from Si skeleton 301 to described first junction film 151.Thus, as shown in Figure 5, produce active hand 304, make it by activate on the surface 31 of first junction film 151.Its result shows cementability on the surface of first junction film 151.
At this, " activate " first junction film 151 is meant: the surface 31 of first junction film 151 and inner disengaging base 303 break away from, in Si skeleton 301, produce the associative key that do not have endization (below, also be called " not associative key " or " dangling bonds ".) state or this state of being mixed by the state of hydroxyl (OH yl) endization or these states of associative key not.
Thereby, active hand 304 be meant not associative key (dangling bonds) or not associative key by the key of C-terminalization.According to so active hand 304, can carry out especially firm joint to nozzle plate 10.
Also have, the latter's state (associative key is not by the state of C-terminalization) for example can pass through first junction film 151 irradiation energy line in air atmosphere, and the moisture in the atmosphere is the associative key endization not, can easily generate thus.
[15-3] secondly prepare nozzle plate 10.
Secondly, the lower surface at nozzle plate 10 forms second junction film 152.The formation method of this second junction film 152 also formation method with described first junction film 151 is identical.
Secondly, give energy to second junction film 152.Thus, show cementability at second junction film 152.
Also have, shown in Fig. 9 (m), so that show first junction film 151 that cementability forms and bonding mode, adhesive substrates 20 and the nozzle plate 10 of second junction film 152.Thus, shown in Fig. 9 (n), substrate 20 and nozzle plate 10 engage (bonding) via first junction film 151 and second junction film 152.
At this, each coefficient of thermal expansion of substrate 20 of Jie Heing and nozzle plate 10 preferably about equally as described above.If the coefficient of thermal expansion of substrate 20 and nozzle plate 10 about equally, then when fitting these, be difficult to produce the stress of following thermal expansion at its joint interface.Its result, finally obtain 1 in, can preventing to peel off etc. properly reliably, situation takes place.
In addition, substrate 20 reclaims under the different mutually situation of each coefficient of thermal expansions of nozzle plates 10, below also the constrained optimization by with adhesive substrates 20 and nozzle plate 10 time is, and can be with high dimensional accuracy bonded substrate 20 and nozzle plate 10 securely.
That is, under the mutually different situation of the coefficient of thermal expansion of substrate 20 and nozzle plate 10, preferably engage at low temperatures as far as possible.By engaging at low temperatures, can further reduce the thermal stress that produces at joint interface.
Specifically, though depend on the thermal expansion rate variance of substrate 20 and nozzle plate 10, preferably under the temperature of substrate 20 and nozzle plate 10 was state about 25～50 ℃, adhesive substrates 20 and nozzle plate 10 were more preferably fitted under the state about 25～40 ℃.Under the situation of such temperature range,, also can be reduced in the thermal stress that joint interface produces fully even the thermal expansion rate variance of substrate 20 and nozzle plate 10 is big to a certain degree.Its result, the generation that can prevent the perk in 1 reliably or peel off etc.
In addition, in this case, the thermal coefficient of expansion between substrate 20 and the nozzle plate 10 is 5 * 10 -5Under the situation more than the/K, as mentioned above, especially recommend to engage at low temperatures as far as possible.Also have, by using first junction film 151 and second junction film 152, under above-mentioned low temperature, also bonded substrate 20 and nozzle plate 10 securely.
In addition, substrate 20 is different mutually with nozzle plate 10 preferred rigidity.Thus, bonded substrate 20 and nozzle plate 10 more firmly.
Also have, preferably implement to improve adhering surface treatment in advance with first junction film 151 in the zone with first junction film, 151 film forming of substrate 20.Thus, can further improve the bond strength between the substrate 20 and first junction film 151, finally can improve the bond strength of substrate 20 and nozzle plate 10.
As described surface treatment, for example, can enumerate chemical surface treatment that the physical surface treatment of sputter process, plasma treatment and so on, the plasma treatment of having used oxygen plasma, nitrogen plasma, Corona discharge Treatment, etch processes, electron ray treatment with irradiation, ultraviolet treatment with irradiation, ozone exposure handle and so on or the processing of making up these etc.By implementing such processing, clean the zone with first junction film, 151 film forming of substrate 20, and, can activate should the zone.
In addition, by in these each surface treatments, using plasma treatment, in order to form first junction film 151, the especially surface of optimization substrate 20.
Also have, implementing especially to be fit to use Corona discharge Treatment, nitrogen plasma treatment etc. under the situation of surface-treated substrate 20 by resin material (macromolecular material) formation.
In addition, according to the constituent material of substrate 20, even implement aforesaid surface treatment, the bond strength of first junction film 151 uprises fully.As the constituent material of the substrate 20 that obtains such effect, for example, can enumerate with various metal materials, various silicon based material, various glass based materials etc. is the material of main material.
The surperficial oxidized film of the substrate 20 that is made of such material covers, on the surface of this oxide-film in conjunction with the higher hydroxyl of specific activity.Thereby,,, the substrate 20 and first junction film 151 are adhered to securely even then do not implement above-mentioned surface treatment if use the substrate 20 that constitutes by such material.
Also have, in this case, the integral body of substrate 20 by above-mentioned material constitute also can, constitute by above-mentioned material to the near surface in the zone of major general's first junction film 151 film forming and to get final product.
And then, have under the situation of following group or material in the zone with first junction film, 151 film forming of substrate 20, even do not implement above-mentioned surface treatment, also can improve the bond strength of the substrate 20 and first junction film 151 fully.
As such group or material, for example, can enumerate at least one group or the material that is selected from by the halogen of the unsaturated bond of the functional group of hydroxyl, mercapto, carboxyl, amino, nitro, imidazole radicals and so on, free radical, open loop molecule, two key, triple bond and so on, F, Cl, Br, I and so on, group that peroxide constitutes.
In addition, preferred suitably the selection carried out above-mentioned various surface treatment, to obtain having the surface of such material.
In addition, preferably replace surface treatment, be pre-formed the intermediate layer in the zone of first junction film 151 of film forming at least of substrate 20.
This intermediate layer have any function also can, for example, preferably have the intermediate layer of improving with adhering function, the resiliency (shock-absorbing capacity) of first junction film 151, relaxing function that stress concentrates etc.By via such intermediate layer, on substrate 20,, can improve the bond strength of the substrate 20 and first junction film 151 with first junction film, 151 film forming, can access the high conjugant of reliability promptly 1.
Constituent material as described intermediate layer, for example, the self-organization membrane material etc. of the carbon-based material, silicon coupling agent, mercaptan based compound, metal alkoxide, metal halide and so on of the nitride based material, graphite, DLC (diamondlikecarbon) and so on of the oxide based material, metal nitride, silicon nitride and so on of the metal based material, metal oxide, Si oxide and so on of aluminium, titanium and so on can be enumerated, in these one or more can be used in combination.
In addition, in the intermediate layer that constitutes by these each materials,, can especially improve the bond strength between the substrate 20 and first junction film 151 according to the intermediate layer that constitutes by oxide based material.
On the other hand, preferably also implement the adhering surface treatment of the raising and second junction film 152 in advance in the zone that contacts with second junction film 152 of nozzle plate 10.Thus, can further improve bond strength between the nozzle plate 10 and second junction film 152.
Also have, in this surface treatment, can be suitable for and the identical processing of aforesaid surface treatment that substrate 20 is implemented.
In addition, preferably replace surface treatment, be pre-formed the intermediate layer of adhering function in the zone that contacts with second junction film 152 of nozzle plate 10 with raising and second junction film 152.Thus, can further improve bond strength between the nozzle plate 10 and second junction film 152.
The constituent material in described intermediate layer can use the constituent material with the intermediate layer that forms at described substrate 20 identical material.
Also have, self-evident to the formation in the described surface treatment of substrate 20 or nozzle plate 10 and intermediate layer, diaphragm seal 30, oscillating plate 40, piezoelectric element 50 and box head 60 are carried out also can.Thus, can further improve the bond strength of each one.
At this,, engage substrate 20 that possesses first junction film 151 and the mechanism that possesses the nozzle plate 10 of second junction film 152 and describe in this operation.
This joint is guessed for based on following two mechanism (i), (ii) the two or one joint.
(i) for example, the situation that to expose hydroxyl on the surface of the surface of first junction film 151 and second junction film 152 respectively describes as an example, in this operation, so that the mode that each junction film 151,152 adheres to, when adhesive substrates 20 and nozzle plate 10, between the hydroxyl that each junction film 151,152 exists, attract each other, between hydroxyl, produce gravitation by hydrogen bond.Guess for passing through this gravitation, substrate 20 and nozzle plate 10 engage more firmly.
In addition, between the hydroxyl that attracts each other by this hydrogen bond according to temperature conditions etc. and dehydrating condensation.Its result, between first junction film 151 and second junction film 152, combination between the associative key of hydroxyl combination.Thus, guess for engaging more firmly between each junction film 151,152.
(ii) if fit the substrate 20 possess first junction film 151 and the nozzle plate 10 that possesses second junction film 152, then the surface of each junction film 151,152 or inner produce not by the associative key of endization (not associative key) between combination once more.This is combined in once more, and the mode intricately with overlap (twining mutually) takes place between first junction film 151 and second junction film 152, therefore, forms network-like key at joint interface.Thus, the mother metal (Si skeleton 301) that constitutes the mother metal (Si skeleton 301) of first junction film 151 and constitute second junction film 152 directly engages, and is integrated between each junction film 151,152.
By aforesaid (i) or mechanism (ii), bonded substrate 20 and nozzle plate 10.
Also have, in described operation [15-2] the activated state on the surface of first junction film 151 of activate and second junction film 152 through the time ground mitigation.Therefore, after described operation [15-2] finishes, preferably carry out this operation [15-3] as early as possible.Specifically, after described operation [15-2] finishes, preferably 60 minutes with interior this operation [15-3] of carrying out, more preferably carried out with interior in 5 minutes.If in the described time, then sufficient activated state is kept on the surface of first junction film 151 and the surface of second junction film 152, therefore, in this operation, when applying possesses the substrate 20 of first junction film 151 and possesses the nozzle plate 10 of second junction film 152, between these, can access sufficient joint strength.
Between the substrate 20 and nozzle plate 10 that engage like this, preferably its bond strength is 5MPa (50kgf/cm 2) more than, more preferably 10MPa (100kgf/cm 2) more than.If such bond strength then can prevent peeling off of joint interface fully.Then, obtain reliability high 1.
Through above operation, make 1.
In addition, to the end after 1, as required this 1 at least one operation (improving the operation of 1 bond strength) of carrying out in two following operations ([16A] and [16B]) also can.Thus, can further improve the bond strength of each one of 1.
[16A] for compress obtain 1, promptly nozzle plate 10, substrate 20, diaphragm seal 30, oscillating plate 40 and box head 60 are to close mutually direction pressurization.
Thus, the surface of the surface of above-mentioned each one and the junction film of adjacency is further approaching, thereby can further improve the bond strength in 1.
In addition,, flatten residual gap in the joint interface in 1, can further enlarge bonding area by correct 1 pressurization.Thus, can further improve a bond strength in 1.
At this moment, the pressure during enemy's 1 pressurization is the pressure of 1 degree that does not sustain damage, and a high side preferably tries one's best.Thus, can improve a bond strength in 1 pro rata with this pressure.
Also have, this pressure suitably regulates getting final product according to the constituent material or the conditions such as shape, engagement device of each one of 1.Specifically, slightly different according to above-mentioned condition, but about preferred 0.2～10MPa, more preferably about 1～5MPa.Thus, can improve a bond strength of 1 reliably.Also have, this pressure is also harmless greater than described higher limit, but according to the constituent material of each one of 1, may damage etc. take place 1.
In addition, the time of pressurization does not limit especially, but preferred about 10 seconds～30 minutes.Also have, pressurization and actual during according to pressurization pressure and suitably change get final product.Specifically, under the high more situation of the pressure during correct 1 pressurization,, also can improve bond strength even the time of pressurization is short.
[16B] heating obtain 1.
Thus, can further improve a bond strength in 1.
At this moment, the temperature during heating head 1 is than room temperature height, if, then do not limit especially less than 1 heat resisting temperature, but preferred about 25～100 ℃, more preferably about 50～100 ℃.If with the heating of the temperature of described scope, then can prevent 1 reliably owing to heat goes bad, deterioration, simultaneously, can improve bond strength reliably.
In addition, do not limit especially heat time heating time, but preferred about 1～30 minute.
Also have, carrying out preferably carrying out these simultaneously under described operation [16A], [16B] both situations.That is heat when, preferred enemy 1 pressurizes.Thus, the effect that causes of the effect that causes of performance pressurization and heating especially can improve a bond strength of 1 with complementing each other.
By carrying out above operation, can easily realize the further raising of the bond strength in 1.
" second embodiment "
Secondly, second embodiment under the situation that droplet discharging head of the present invention is applicable to ink jet recording head is described.
To be expression be applicable to that with droplet discharging head of the present invention the partial enlarged drawing of the state before the energy of the junction film that second embodiment under the situation of ink jet recording head possesses is given, Figure 12 are the partial enlarged drawings that expression is applicable to droplet discharging head of the present invention state after the energy of the junction film that second embodiment under the situation of ink jet recording head possesses is given to Figure 11.Also have, in the following description, the upside among Figure 11 and Figure 12 is called " on ", downside is called D score.
Below, second embodiment of ink jet recording head is described, but be that the center describes with difference with the described ink jet recording head of described first embodiment, about identical item, omit its explanation.
The ink jet recording head of present embodiment is except the structure difference of each junction film, and is identical with described first embodiment.
Promptly, ink jet recording head with regard to present embodiment, each junction film 151,152,251,252,351,352,451a, 452a, 451b, 452b be respectively by under the state of energy before giving, the disengaging base 303 that comprises metallic atom, the oxygen atom that combines with this metallic atom and close at least one reef knot of these metallic atoms and oxygen atom.In other words, we can say that each junction film 151,152,251,252,351,352,451a, 452a, 451b, 452b before energy is given are respectively the film that imports disengaging base 303 to the metal oxide film that is made of metal oxide.
Each junction film 151,152,251,252,351,352 like this, 451a, 452a, 451b, 452b are endowed under the situation of energy, break away from least one sides disengaging of base 303, produce active hand 304 at the near surface at least of each junction film 151,152,251,252,351,352,451a, 452a, 451b, 452b from metallic atom and oxygen atom.Also have, thus, show and the identical cementability of described first embodiment on the surface of each junction film 151,152,251,252,351,352,451a, 452a, 451b, 452b.
Below, each junction film 151,152,251,252,351,352,451a, 452a, 451b, the 452b of present embodiment described, but these structures are common, therefore, are that representative describes with first junction film 151.
First junction film 151 comprises metallic atom and the oxygen atom that combines with this metallic atom, promptly at metal oxide in conjunction with breaking away from base 303, therefore, form the firm film that is difficult to be out of shape.Therefore, the dimensional accuracy height of first junction film 151 self, finally obtain 1 in, also obtain high dimensional accuracy.
And then first junction film 151 is the solid shape with flowability.Therefore, compare with the liquid state of bringing into use with flowability or the bonding agent of mucus shape (semi-solid) in the past, the thickness or the shape of adhesive linkage (first junction film 151) change hardly.Thereby 1 the dimensional accuracy of using that first junction film 151 obtains is compared with the past very high.And then, do not need required time of curing of bonding agent, therefore, can carry out firm joint at short notice.
In addition, in the present invention, first junction film 151 preferably has electric conductivity.Thus, in described later 1, can suppress or prevent casual charged.Its result can control the emission direction of black liquid reliably.
In addition, have under the situation of electric conductivity at first junction film 151, the resistivity of first junction film 151 is omited difference according to the composition of constituent material, but preferred 1 * 10 -3Below the Ω cm, more preferably 1 * 10 -4Below the Ω cm.
Also have, get final product near breaking away from the surface 31 that base 303 is present in first junction film 151 at least, first junction film 151 roughly exist on the whole also can, the surface 31 of first junction film 151 near, be offset existence and also can.Also have, be offset near the structure that is present in surperficial 31, can make the function of first junction film, 151 suitable performances as metal oxide film by forming disengaging base 303.That is, also obtain except the function of bearing joint, can also suitably give advantage first junction film 151 as the function of the metal oxide film of excellents such as electric conductivity or permeability.In other words, can prevent to break away from the situation that base 303 hinders characteristics such as the electric conductivity of first junction film 151 or permeability reliably.
In the mode of suitable performance, select metallic atom as the function of the first above junction film 151.
Specifically, as metallic atom, do not limit especially, but for example, can enumerate Li, Be, B, Na, Mg, Al, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Rb, Sr, Y, Zr, Nb, Mo, Cd, In, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Ti and Pb etc.Wherein, one or more among preferred compositions In (indium), Sn (tin), Zn (zinc), Ti (titanium) and the Sb (antimony) and using.By making first junction film 151 contain these metallic atoms, promptly in the metal oxide that contains these metallic atoms, import the superior electric conductivity and the transparency of disengaging base 303, the first junction films, 151 performances.
More particularly, as metal oxide, for example, can enumerate indium tin oxide (ITO), indium-zinc oxide (IZO), antimony tin oxide (ATO), fluorine-containing indium tin oxide (FTO), zinc oxide (ZnO) and titanium dioxide (TiO 2) etc.
Also have, using as metal oxide under the situation of indium tin oxide (ITO), the atomic ratio of indium and tin (indium/tin than) is preferred 99/1～80/20, and more preferably 97/3～85/15.Thus, can bring into play aforesaid effect more significantly.
In addition, the metallic atom in first junction film 151 and the existence of oxygen atom than preferred 3:7～7:3 about, more preferably about 4:6～6:4.By with the existence of metallic atom and oxygen atom than being made as in the described scope, the stability of first junction film 151 uprises, and can engage the substrate 20 and the nozzle plate 10 that have junction film more firmly.
In addition, break away from base 303 as mentioned above,, make first junction film 151 produce active hand by at least one side's disengaging of metallic atom and oxygen atom.Thereby, break away from base 303 and select with when not being endowed energy, not breaking away from by being endowed energy, fairly simple ground and disengaging equably, but the disengaging base that does not combine with first junction film 151 reliably.
From described viewpoint, break away from base 303 and suitably use at least a in the atomic group of hydrogen atoms, carbon atom, nitrogen-atoms, phosphorus atoms, sulphur atom and halogen atom or these each atomic buildings.The described selectivity ratios of passing through combination/disengaging that giving of energy cause that breaks away from base 303 is more superior.Therefore, such disengaging base 303 can fully satisfy aforesaid necessity, can further improve the cementability of substrate 20 and nozzle plate 10.
Also have,, for example, can enumerate alkyl, carboxyl, amino and the sulfonic group etc. of the alkyl, methoxyl group, ethyoxyl and so on of methyl, ethyl and so on as atomic group (group) by above-mentioned each atomic building.
In above each atom and atomic group, break away from the especially preferred hydrogen atom of base 303.The chemical stability height of the disengaging base 303 that is made of hydrogen atom, therefore, to possess the against weather and the resistance to chemical reagents of first junction film 151 of hydrogen atom superior as breaking away from base 303.
If consider above situation,, suitably be chosen in indium tin oxide (ITO), indium-zinc oxide (IZO), antimony tin oxide (ATO), fluorine-containing indium tin oxide (FTO), zinc oxide (ZnO) or titanium dioxide (TiO then as first junction film 151 2) metal oxide in import junction film as the hydrogen atom that breaks away from base 303.
First junction film 151 of described structure himself has superior mechanical property.In addition, wide variety of materials is shown especially superior cementability.Thereby the first such junction film 151 is bonding especially securely with respect to substrate 20, and, also show especially strong bonding force with respect to nozzle plate 10, its result, bonded substrate 20 and nozzle plate 10 securely.
In addition, about the preferred 1～1000nm of the average thickness of first junction film 151, more preferably about 2～800nm.Be made as in the described scope by average thickness, can prevent the significantly reduced situation of dimensional accuracy of 1, simultaneously, substrate 20 and nozzle plate 10 can be engaged more firmly first junction film 151.
That is, under the situation of average thickness less than described lower limit of first junction film 151, might can not get sufficient joint strength.On the other hand, under the situation of average thickness greater than described higher limit of first junction film 151, dimensional accuracy that might 1 significantly reduces.
And then, if the average thickness of first junction film 151 is in the described scope, then guarantee the product having shape-following-up properties to a certain degree of first junction film 151.Therefore, for example, exist under the irregular situation on the composition surface of substrate 20 (with the face of first junction film, 151 film forming), though depend on the height that it is concavo-convex, first junction film 151 can be covered in the mode of following concavo-convex shape.Its result, first junction film 151 absorbs concavo-convex, can relax the concavo-convex height that produces on its surface.Also have, when adhesive substrates 20 and nozzle plate 10, can improve the adhesiveness with respect to nozzle plate 10 of first junction film 151.
Also have, the degree of aforesaid product having shape-following-up properties is that the thickness of first junction film 151 is thick more and remarkable more.Thereby in order to guarantee product having shape-following-up properties fully, the thickness that as far as possible increases by first junction film 151 gets final product.
Aforesaid first junction film 151 roughly has under the situation that breaks away from base 303 on the whole first junction film 151, for example, A: can contain under the atmosphere that constitutes the atomic component that breaks away from base 303, utilize physical vapor to become embrane method, to contain the metal oxide materials film forming of metallic atom and oxygen atom, form thus.In addition, break away from base 303 under near the situation that skew exists the surface 31 of first junction film 151, for example, B: can be after will containing the metal oxide film film forming of metallic atom and described oxygen atom, the metallic atom that contains at the near surface of this metal oxide film and at least one side of oxygen atom import and break away from base 303, form thus.
Below, to using the method for A and B, the situation with first junction film, 151 film forming on substrate 20 describes in detail.
＜A 〉: in the method for A, first junction film 151 containing under the atmosphere that constitutes the atomic component that breaks away from base 303, utilizes physical vapor to become embrane method (PVD method) as mentioned above, and the metal oxide materials film forming that will contain metallic atom and oxygen atom forms.If form the formation of such use PVD method, then make metal oxide materials when substrate 20 flies here, can import disengaging base 303 at least one side of metallic atom and oxygen atom with comparalive ease, therefore, can break away from base 303 roughly importing on the whole of first junction film 151.
And then, according to the PVD method as can be known, can efficient film forming densification well and uniform first junction film 151.Thus, first junction film 151 by PVD method film forming can engage especially securely with respect to nozzle plate 10.And then, in long-time, keep to be endowed energy and the state of activate by first junction film 151 of PVD method film forming.Therefore, can realize simplification, the efficient activity of 1 manufacture process.
In addition, as the PVD method, can enumerate vacuum vapour deposition, sputtering method, ion electroplating method, laser wearing and tearing method etc., but wherein, preferably use sputtering method.According to sputtering method as can be known, the key of metallic atom and oxygen atom is not cut off, and can tap the particle of metal oxide in containing the atmosphere that constitutes the atomic component that breaks away from base 303.Also have, under the state of the particle that taps metal oxide, can contact, therefore, can carry out importing more swimmingly to the disengaging base 303 of metal oxide (metallic atom or oxygen atom) with the gas that constitutes the atomic component that breaks away from base 303.
Below, as the method for utilizing the PVD method with first junction film, 151 film forming, utilizing sputtering method (ion beam sputtering), be that representative describes with the situation of first junction film, 151 film forming.
At first, before the film build method of explanation first junction film 151, to utilize ion beam sputtering on substrate 20, the film formation device 200 that uses during with first junction film, 151 film forming describes.
Figure 13 is the longitudinal sectional drawing of the film formation device that uses in the making with the junction film that schematically shows present embodiment, and Figure 14 is the schematic diagram of the ionogenic structure that possesses of expression film formation device shown in Figure 13.Also have, in the following description, the upside among Figure 13 be called " on ", downside is called
D score.
Film formation device 200 shown in Figure 13 constitutes, and utilizes the formation of first junction film 151 of ion beam sputtering to carry out in chamber (device).
Specifically, film formation device 200 has: chamber (vacuum chamber) 211; Be arranged in this chamber 211, and keep the substrate supporting frame (film forming object maintaining part) 212 of substrate (film forming object) 20; Be arranged in the chamber 211, and towards the ion gun (ion supply unit) 215 of chamber 211 internal radiation ion beam B; To produce metal oxide (for example, the target body bearing support (target body maintaining part) 217 of target body ITO) (metal oxide materials) 216 maintenances that contains metallic atom and oxygen atom by the irradiation of ion beam B.
In addition, chamber 211 has: supply with the gas supply mechanism 260 that contains the gas (for example, hydrogen) that constitutes the atomic component that breaks away from base 303 in chamber 211; Carry out the exhaust of chamber 211, the exhaust gear 230 of controlled pressure.
Also have, in the present embodiment, substrate supporting frame 212 is installed on the top plate portion of chamber 211.This substrate supporting frame 212 can rotate.Thus, can be with the thickness of even and homogeneous, on substrate 20 with first junction film, 151 film forming.
Ion gun (ion gun) 215 has as shown in figure 14: the ion generating chamber 256 that is formed with opening (irradiation mouth) 250; Be arranged at the filament 257 of ion generating chamber 256; Grid 253,254; Be arranged at the magnet 255 in the outside of ion generating chamber 256.
In addition, as shown in figure 13, be connected with gas supply source 219 to its internal feed gas (sputter gas) in ion generating chamber 256.
In this ion gun 215, if in ion generating chamber 256, supplied with under the state of gas from gas supply source 219, with filament 257 energising heating, then from filament 257 ejected electrons, the electronics of emitting moves by the magnetic field of magnet 255, collides with the gas molecule that is supplied in the ion generating chamber 256.Thus, gas molecule is ionized.The ion I of this gas +By the voltage gradient between grid 253 and the grid 254, in ion generating chamber 256, drawn, and be accelerated, as ion beam B, emit (irradiation) via opening 250 from ion gun 215.
Collide from the ion beam B of ion gun 215 irradiations and the surface of target body 216, tap particle (sputtering particle) from target body 216.This target body 216 is made of aforesaid metal oxide materials.
In this film formation device 200, ion gun 215 is positioned at chamber 211 in order to make its opening 250, and fixing (setting) is in the sidewall of chamber 211.Also have, ion gun 215 also can be disposed at from chamber 211 position at interval, forms the structure that is connected with chamber 211 via connecting portion, but by forming the structure of present embodiment, can be embodied as the miniaturization of film device 200.
In addition, ion gun 215 is set to, and its opening 250 is towards the direction inequality with substrate supporting frame 212, in the present embodiment towards the bottom side of chamber 211.
Also have, the number that is provided with of ion gun 215 is not limited to one, also can by being set to a plurality of ion guns 215, can further improve the film forming speed of first junction film 151 for a plurality of.
In addition, near target body bearing support 217 and substrate supporting frame 212, set first shutter 220 and second shutter 221 that can cover these respectively.
These shutters 220,221 are respectively applied for and prevent that target body 216, substrate 20 and first junction film 151 are exposed to the situation in the atmosphere not etc.
In addition, exhaust gear 230 comprises: pump 232; The exhaust lay out 231 that is communicated with pump 232 and chamber 211; At the valve 233 that is provided with of exhaust lay out 231, decompression in the chamber 211 can be the pressure of expectation midway.
And then gas supply mechanism 260 comprises: store the gas container 264 that contains the gas (for example, hydrogen) that constitutes the atomic component that breaks away from base 303; From the gas supply lines 261 of gas container 264 to chamber 211 these gases of guiding; At the pump 262 and the valve 263 that are provided with of gas supply lines 261 midway, can in chamber 211, supply with containing the atomic component that constitutes disengaging base 303.
Use the film formation device 200 of aforesaid structure, form first junction film 151 as described below.
At this, on substrate 20, the method for first junction film, 151 film forming being described.
At first, prepared substrate 20 is sent into this substrate 20 in the chamber 211 of film formation device 200, with its assembling (setting) in substrate supporting frame 212.
Secondly, operation exhaust gear 230 has promptly moved under the state of pump 232, opens valve 233, will form decompression state in the chamber 211 thus.The degree of this decompression (vacuum) does not limit especially, but preferred 1 * 10 -7～1 * 10 -4About Torr, more preferably 1 * 10 -6～1 * 10 -5About Torr.
And then operation gas supply mechanism 260 is promptly opened valve 263 under the state that has moved pump 262, supplies with in chamber 211 thus and contains the gas that constitutes the atomic component that breaks away from base 303.Thus, can will form (under the hydrogen atmosphere) under the atmosphere that contains described gas in the chamber.
Contain about the preferred 1～100ccm of flow of the gas that constitutes the atomic component that breaks away from base 303, more preferably about 10～60ccm.Thus, can break away from base 303 at least one can the importing of metallic atom and oxygen atom with leaning on.
In addition, the temperature in the chamber 211 is to get final product more than 25 ℃, but preferred about 25～100 ℃.By being set in the described scope, efficient is carried out metallic atom or oxygen atom well and is contained the reaction of the gas of described atomic component, can import the gas that contains described atomic component reliably to metallic atom and oxygen atom.
Secondly, open second shutter 221, and then first shutter 220 is made as the state of opening.
Under this state, in the ion generating chamber 256 of ion gun 215, import gas, and, heat to filament 257 conductions.Thus, from filament 257 ejected electrons, the tyco electronics that gas molecule and this are emitted, gas molecule is ionized thus.
The ion I of this gas +Quickened by grid 253 and grid 254, emit, collide with the target body 216 that constitutes by cathode material from ion gun 215.Thus, tap metal oxide (for example, particle ITO) from target body 216.At this moment, for containing under the atmosphere that will constitute the gas that the atomic component that breaks away from base 303 contains (for example, under the hydrogen atmosphere), therefore, metallic atom that contains in the particle that taps in chamber 211 and oxygen atom import and break away from base 303 in the chamber 211.Also have, have the metal oxide of this disengaging base 303 to be deposited on the substrate 20, form first junction film 151 by importing.
Also have, in Shuo Ming the ion beam sputtering, in the ion generating chamber 256 of ion gun 215, discharge in the present embodiment, produce electronics e -, but this electronics e -Covered by grid 253, prevent from chamber 211, to emit.
And then, the direction of illumination of ion beam B (opening 250 of ion gun 215) is towards target body 216 (direction inequality with the bottom side of chamber 211), therefore, prevent more reliably that in ion generating chamber 256 ultraviolet ray that produces shines in the situation of first junction film 151 of film forming, the situation that the disengaging base 303 that can prevent from reliably to import breaks away from the film forming of first junction film 151.
As mentioned above, can be with first junction film, 151 film forming that roughly break away from base 303 existence on the whole at thickness direction.
＜B 〉: on the other hand, in the B method, first junction film 151 by the metal oxide film film forming that will contain metallic atom and oxygen atom after, at least one side of metallic atom that contains to the near surface at this metal oxide film and oxygen atom imports and breaks away from base 303 and form.According to described method as can be known, be fairly simple operation, can will break away from the states that base 303 exists with skew at the near surface of metal oxide film and import, can form both first junction film 151 of excellent as junction film and metal oxide film.
At this, metal oxide film comes film forming also can by any means, for example, can become embrane method or various liquid phase to become embrane method to wait film forming by the various gas phases of PVD method (physical vapor becomes embrane method), CVD method (chemical gaseous phase becomes embrane method), Plasma Polymerization and so on, but wherein, especially preferably utilize the PVD method to come film forming.According to the PVD method as can be known, can efficient film forming densification well and even metal oxidation film.
In addition, as the PVD method, can enumerate vacuum vapour deposition, sputtering method, ion electroplating method, reach laser wearing and tearing method etc., but wherein, preferably use sputtering method.According to sputtering method as can be known, the key of metallic atom and oxygen atom is not cut off, and can tap the particle of metal oxide in atmosphere, with it on substrate 20, supplying with, therefore, can be with the metal oxide film film forming of excellent.
And then, import the method that breaks away from base 303 as near surface at metal oxide film, make and in all sorts of ways, for example, can enumerate B1: under the atmosphere that contains the atomic component that constitute to break away from base 303 with method, the B2 of metal oxide film heat treatment (annealing): ion injection method etc., but wherein, especially preferentially use the method for B1.According to the method for B1 as can be known, can import selectively breaking away from base 303 near surfaces with comparalive ease at metal oxide film.In addition, treatment conditions such as atmosphere temperature when implementing heat treatment or processing time by suitably being set in, the amount of the disengaging base 303 that can import reliably, and further import the control of the thickness of the metal oxide film that breaks away from base 303 reliably.
Below, to utilize sputtering method (ion beam sputtering) with the metal oxide film film forming, secondly, the metal oxide film that obtains is being contained heat treatment (annealing) under the atmosphere that constitutes the atomic component that breaks away from base 303, the situation that obtains first junction film 151 thus is that representative describes.
Also have, come under the situation of film forming first junction film 151 in the method for using B, also use the film formation device identical with the film formation device that uses 200 when adopting method film forming first junction film 151 of A, therefore, omission is about the explanation of film formation device.
[i] at first, prepared substrate 20.Also have, this substrate 20 is sent in the chamber 211 of film formation device 200, assembling (setting) is in substrate supporting frame 212.
[ii] secondly, operation exhaust gear 230 has promptly moved under the state of pump 232 and has opened valve 233, will form decompression state in the chamber 211 thus.The degree of this decompression (vacuum) does not limit especially, but preferred 1 * 10 -7～1 * 10 -4About Torr, more preferably 1 * 10 -6～1 * 10 -5About Torr.
In addition, at this moment, the operation heating arrangements is in the heated chamber 211.Temperature in the chamber 211 is to get final product more than 25 ℃, but preferred about 25～100 ℃.By being set in the described scope, metal oxide film film forming that can film density is high.
[iii] secondly opens second shutter 221, and then first shutter 220 is made as the state of opening.
Under this state, in the ion generating chamber 256 of ion gun 215, import gas, and, heat to filament 257 energisings.Thus, from filament 257 ejected electrons, electronics that this is emitted and gas molecule collide, and gas molecule is ionized thus.
The ion I of this gas +Quickened by grid 253 and grid 254, emit, collide with the target body 216 that constitutes by cathode material from ion gun 215.Thus, (for example, particle ITO) is deposited on the substrate 20, forms the metal oxide film that contains the oxygen atom that combines with this metallic atom to tap metal oxide from target body 216.
Also have, in Shuo Ming the ion beam sputtering, in the ion generating chamber 256 of ion gun 215, discharge in the present embodiment, produce electronics e -, but this electronics e -Covered by grid 253, prevent from chamber 211, to emit.
And then the direction of illumination of ion beam B (opening 250 of ion gun 215) is towards target body 216
(direction inequality) with the bottom side of chamber 211, therefore, prevent more reliably that in ion generating chamber 256 ultraviolet ray that produces shines in the situation of first junction film 151 of film forming, the situation that the disengaging base 303 that can prevent from reliably to import breaks away from the film forming of first junction film 151.
[iv] secondly under the state of having opened second shutter 221, closes first shutter 220.
Under this state, the operation heating arrangements, and then in the heated chamber 211.Temperature in the chamber 211 is set at and breaks away from the temperature that basic 303 efficient import the surface of metal oxide film well, and preferred about 100～600 ℃, more preferably about 150～300 ℃.By being set in the described scope, in operation [v] next, do not make that substrate 20 and metal oxide film are rotten, deterioration, can break away from the surface that basic 303 efficient import metal oxide film well.
[v] secondly moves gas supply mechanism 260, promptly opens valve 263 under the state that has moved pump 262, thus, supplies with in chamber 211 and contains the gas that constitutes the atomic component that breaks away from base 303.Thus, can will form (under the hydrogen atmosphere) under the atmosphere that contains described gas in the chamber 211.
Like this, in preceding operation [iv] with chamber 211 under the heated state, if will (for example form in the chamber 211 under the atmosphere that contains the gas that the atomic component that will constitute break away from base 303 contains, under the hydrogen atmosphere), then import and break away from basicly 303, form first junction film 151 at least one side of metallic atom that exists at the near surface of metal oxide film and oxygen atom.
Contain about the preferred 1～100ccm of stream of the gas that constitutes the atomic component that breaks away from base 303, more preferably about 10～60ccm.Thus, can break away from base 303 at least one can the importing of metallic atom and oxygen atom with leaning on.
Also have, in described operation [ii], preferably keep the decompression state of regulating by operation exhaust gear 230 in the chamber 211.Thus, can carry out importing more swimmingly to the disengaging base 303 of the near surface of metal oxide film.In addition, by forming under the situation of the decompression state of keeping described operation [ii], directly in this operation with the structure of decompression chamber 211 in, omit the labour of reducing pressure once more, therefore, also obtain cutting down the advantage of film formation time and film forming cost etc.
The degree of this decompression (vacuum) does not limit especially, but preferred 1 * 10 -7～1 * 10 -4About Torr, more preferably 1 * 10 -6～1 * 10 -5About Torr.
In addition, implemented heat treatment period preferred about 15～120 minutes, more preferably about 30～60 minutes.
According to the kind of the disengaging base 303 that imports etc. and different, but the condition by will implement heat treatment time the (temperature, vacuum, gas flow, processing time in the chamber 211) is set in the above-mentioned scope, can be selectively imports to the near surface of metal oxide film and breaks away from base 303.
As mentioned above, can first junction film, 151 film forming that base 303 skews exist will be broken away near surface 31.
In the ink jet recording head 1 of second embodiment, also obtain effect, the effect identical as mentioned above with described first embodiment.
" the 3rd embodiment "
Secondly, the 3rd embodiment under the situation that droplet discharging head of the present invention is applicable to ink jet recording head is described.
Below, the 3rd embodiment of ink jet recording head is described, but with the ink jet recording head difference described in described first embodiment and described second embodiment be that the center describes, for identical item, omit its explanation.
The ink jet recording head of present embodiment is except the structure difference of each junction film, and is identical with described first embodiment.
Promptly, ink jet recording head with regard to present embodiment, under the state before each junction film 151,152,251,252,351,352,451a, 452a, 451b, 452b are given by energy respectively, the disengaging base 303 that comprises metallic atom and constitute by organic principle.
Each junction film 151,152,251,252,351,352 like this, 451a, 452a, 451b, 452b are endowed under the situation of energy, break away from base 303 and break away from, produce active hand 304 at the near surface at least of each junction film 151,152,251,252,351,352,451a, 452a, 451b, 452b from each junction film 151,152,251,252,351,352,451a, 452a, 451b, 452b.Also have, thus, show and the identical cementability of described second embodiment on the surface of each junction film 151,152,251,252,351,352,451a, 452a, 451b, 452b.
Below, each junction film 151,152,251,252,351,352,451a, 452a, 451b, the 452b of present embodiment described, but these structures are common, therefore, are that representative describes with first junction film 151.
First junction film 151 is arranged on the substrate 20, the disengaging base 303 that comprises metallic atom and be made of organic principle.
First junction film 151 like this is being endowed under the situation of energy, the associative key that breaks away from base 303 is cut off, from near surface 31, breaking away from least of first junction film 151, as shown in figure 12, near the active hand 304 of generation surface 31 at least of first junction film 151.Also have, thus, show cementability on the surface 31 of first junction film 151.If show described cementability, then possess first junction film 151 substrate 20 can with respect to second junction film 152 with high dimensional accuracy firmly and efficient engage well.
In addition, first junction film 151 is to comprise metallic atom and the film of the disengaging base 303 that is made of organic principle is the organic metal film, therefore, forms the firm film that is difficult to be out of shape.Therefore, the dimensional accuracy height of first junction film 151 self, finally obtain 1 in, also obtain high dimensional accuracy.
First junction film 151 like this is the solid shape with flowability.Therefore, compare with the liquid state of bringing into use with flowability or the bonding agent of mucus shape (semi-solid) in the past, the thickness or the shape of adhesive linkage (first junction film 151) change hardly.Thereby 1 the dimensional accuracy of using that the first such junction film 151 obtains is compared with the past very high.And then, do not need required time of curing of bonding agent, therefore, can carry out firm joint at short notice.
In addition, in the present invention, first junction film 151 preferably has electric conductivity.Thus, in described later 1, can suppress or prevent casual charged.Its result can control the emission direction of black liquid reliably.
In the mode of suitable performance, select metallic atom and break away from base 303 as the function of the first above junction film 151.
Specifically, as metallic atom, do not limit especially, but for example, can enumerate the typical metal element etc. of the transition metal, Li, Be, Na, Mg, Al, K, Ca, Zn, Ga, Rb, Sr, Cd, In, Sn, Sb, Cs, Ba, Tl, Pd, Bi, Po and so on of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au, various lanthanide series, various actinides and so on.
At this, with regard to transition metal, between each transition metal, the quantity difference of outermost electron is this point difference only, and therefore, rerum natura is similar.Also have, usually, the hardness of transition metal or fusing point height, electric conductivity and heat conductivity height.Therefore, using as metallic atom under the situation of transition metal, can further improve the cementability that shows at first junction film 151.In addition, meanwhile, can further improve the electric conductivity of first junction film 151.
In addition, as metallic atom, combination among Cu, Al, Zn and the Fe one or more and under the situation about using, the superior electric conductivity of first junction film, 151 performances.In addition, using under the situation of organometallic chemistry vapor growth method described later with first junction film, 151 film forming, the metal complex etc. that will contain these metals uses as raw material, can be than being easier to and first junction film, 151 film forming of homogeneous.
In addition, break away from base 303 as mentioned above,, make first junction film 151 produce active hand by breaking away from from first junction film 151.Thereby, break away from base 303 and suitably select by being endowed energy, fairly simple and break away from equably, but when not being endowed energy, be not incorporated into the disengaging base 303 of first junction film 151 reliably with not breaking away from.
Specifically,, suitably select carbon atom, and contain at least a atomic group in hydrogen atom, nitrogen-atoms, phosphorus atoms, sulphur atom and the halogen atom as necessary composition as breaking away from base 303.The selectivity ratios of the combination/disengaging of giving of passing through energy of described disengaging base 303 is more superior.Therefore, such disengaging base 303 can fully satisfy aforesaid necessity, can further improve the cementability of first junction film 151.
More particularly, as atomic group (group), for example, except the alkoxyl of the alkyl of methyl, ethyl and so on, methoxyl group, ethyoxyl and so on, carboxyl, can enumerate atomic group that the end of described alkyl finishes by NCO, amino and sulfonic group etc. etc.
In above atomic group, break away from especially preferred alkyl of base 303.The chemical stability height of the disengaging base 303 that is made of alkyl, therefore, to possess the against weather and the resistance to chemical reagents of first junction film 151 of alkyl superior as breaking away from base 303.
In addition, in first junction film 151 of described structure, the existence of metallic atom and oxygen atom than preferred 3:7～7:3 about, more preferably about 4:6～6:4.By with the existence of metallic atom and carbon atom than being made as in the described scope, the stability of first junction film 151 uprises, more firmly bonded substrate 20 and nozzle plate 10.In addition, can make the superior electric conductivity of first junction film, 151 performances.
In addition, about the preferred 1～1000nm of the average thickness of first junction film 151, more preferably about 50～800nm.Be made as in the described scope by average thickness, can prevent that the dimensional accuracy of 1 from significantly reducing first junction film 151, simultaneously, bonded substrate 20 and nozzle plate 10 more firmly.
That is, under the situation of average thickness less than described lower limit of first junction film 151, might can not get sufficient joint strength.On the other hand, under the situation of average thickness greater than described higher limit of first junction film 151, dimensional accuracy that might conjugant 4 significantly reduces.
And then, if the average thickness of first junction film 151 is in the described scope, then guarantee the product having shape-following-up properties to a certain degree of first junction film 151.Therefore, for example, exist under the irregular situation on the composition surface of substrate 20 (with the face of first junction film, 151 film forming), though depend on the height that it is concavo-convex, first junction film 151 can be covered in the mode of following concavo-convex shape.Its result, first junction film 151 absorbs concavo-convex, can relax the concavo-convex height that produces on its surface.Also have, when adhesive substrates 20 and nozzle plate 10, can improve the adhesiveness with respect to second junction film 152 of first junction film 151.
Also have, the degree of aforesaid product having shape-following-up properties is that the thickness of first junction film 151 is thick more and remarkable more.Thereby in order to guarantee product having shape-following-up properties fully, the thickness that as far as possible increases by first junction film 151 gets final product.
Aforesaid first junction film 151 can come film forming by any means, but for example, can enumerate IIa: on the metal film that constitutes by metallic atom, to contain disengaging base (organic principle) 303 and give (chemical modification) selectively to the roughly integral body or the near surface of metal film, form the method for first junction film 151, IIb: will have metallic atom and contain break away from base (organic principle) 303 organic organo metallic material as raw material, use the organometallic chemistry vapor growth method, form the method (knitting layer that stacked method or formation are made of monoatomic layer) of first junction film 151, IIc: will have metallic atom and contain break away from base 303 organic organo metallic material as raw material, suitably be dissolved in the solvent, use spin-coating method etc., form the method for junction film etc.Wherein, preferably utilize the IIb method with first junction film, 151 film forming.According to described method as can be known, this method is fairly simple operation, and can form first junction film 151 of homogeneous.
Below, with the method for IIb be about to have metallic atom and contain break away from base (organic principle) 303 organic raw material as raw material, use the organometallic chemistry vapor growth method, form the method for first junction film 151, the situation that obtains first junction film 151 is that representative describes.
At first, before the film build method of explanation first junction film 151, the film formation device 400 that uses to first junction film, 151 film forming the time describes.
Figure 15 is the longitudinal sectional drawing with the film formation device that uses in the making that schematically shows junction film in the present embodiment.Also have, in the following description, the upside among Figure 15 is called " on ", downside is called D score.
Film formation device 400 shown in Figure 15 constitutes, and utilizes the formation of first junction film 151 of organometallic chemistry vapor growth method (below, also economize slightly " mocvd method " sometimes) in chamber 411.
Specifically, film formation device 400 has: chamber (vacuum chamber) 411; Be arranged in this chamber 411 and the substrate supporting frame (film forming object maintaining part) 412 of maintenance substrate 20 (film forming object); In chamber 411, supply with the organic metal feed mechanism 460 of the organo metallic material of gasification or atomizing; Supply is used for and will be made as the gas supply mechanism 470 of the gas under the low reducing atmosphere in the chamber 411; Carry out the exhaust in the chamber 411, the exhaust gear 430 of controlled pressure; The heating arrangements of heated substrates bearing support 412 (not shown).
Substrate supporting frame 412 is installed on the bottom of chamber 411 in the present embodiment.This substrate supporting frame 412 can rotate by the operation of motor.Thus, can be with the thickness of even and homogeneous, film forming on substrate 2.
In addition, near substrate supporting frame 412, be equipped with the shutter 421 that can cover these respectively.This shutter 421 is used for preventing that the substrate 20 and first junction film 151 are exposed to unwanted atmosphere etc.
Organic metal feed mechanism 460 is connected in chamber 411.This organic metal feed mechanism 460 has: the storagetank 462 of storing solid-state organo metallic material; The gas container 465 of the carrier gas that the organo metallic material that storage will be gasified or atomize is carried in chamber 411; The gas supply lines 461 that the organo metallic material of carrier gas and gasification or atomizing is guided in chamber 411; The pump 464 and the valve 463 that are provided with at gas supply lines 461 midway.In the organic metal feed mechanism 460 of described structure, storagetank 462 has heating arrangements, by the operation of this heating arrangements, can heat solid-state organo metallic material, and makes its gasification.Therefore, under the state that valve 463 is opened, process pump 464, with carrier gas from gas container 465 under the situation that storagetank 462 is supplied with, the organo metallic material of gasification or atomizing together passes through to be supplied in the chamber 411 in the supply lines 461 with this carrier gas.
Also have,, do not limit especially, for example, suitably use nitrogen, argon gas and helium etc. as carrier gas.
In addition, in the present embodiment, gas supply mechanism 470 is connected with chamber 411.Gas supply mechanism 470 comprises: store the gas container 475 that is used for being made as in the chamber 411 under the low reducing atmosphere; The gas supply lines 471 that the described gas that is used to be made as under the low reducing atmosphere is guided in chamber 411; The pump 474 and the valve 473 that are provided with at gas supply lines 471 midway.In the gas supply mechanism 470 of described structure, under the state that valve 473 is opened, if process pump 474, then described be used to be made as gas under the low reducing atmosphere from gas container 475 via supply lines 471, be supplied in the chamber 411.By gas supply mechanism 470 is made as described structure, can will be made as in the chamber 411 with respect to the low reliably atmosphere of reducing of organo metallic material.Its result, with organo metallic material as raw material, use mocvd method, during with first junction film, 151 film forming, with at least a portion of the organic principle that will be contained in organo metallic material as breaking away under the residual state of base 303 with first junction film, 151 film forming.
Gas as under will be made as in the chamber 411 low reducing atmosphere does not limit especially, but for example can enumerate the rare gas, nitric oxide, nitrogen dioxide etc. of nitrogen and helium, argon gas, xenon and so on, and wherein one or more can be used in combination.
Also have, as organo metallic material, 2,4-pentadiol ester-copper (II) or [Cu (hfac) is (VTMS)] etc. and so on as described later, use contains in molecular structure under the situation of organo metallic material of oxygen atom, preferably adds hydrogen to the gas that is used for being made as under the low reducing atmosphere.Thus, can improve reproducibility to oxygen atom, can be with first junction film, 151 film forming under the situation of the not residual excessive oxygen atom of first junction film 151.Its result, the metal oxide in the film of this first junction film 151 exist rate low, thereby bring into play superior electric conductivity.
In addition, under at least a situation of using as carrier gas in nitrogen, argon gas and the helium, can also make this carrier gas performance as the function that is used to be made as the gas under the low reducing atmosphere.
In addition, exhaust gear 430 comprises: pump 432; The exhaust lay out 431 that is communicated with pump 432 and chamber 411; At the valve 433 that is provided with of exhaust lay out 431, decompression in the chamber 411 can be the pressure of expectation midway.
Film formation device 400 by using aforesaid structure utilizes mocvd method, forms first junction film 151 as described below on substrate 2.
[i] at first, prepared substrate 2.Also have, this substrate 20 sent in the chamber 411 of film formation device 400, with its assembling (setting) in substrate supporting frame 412.
[ii] secondly moves exhaust gear 430, promptly moved under the state of pump 432, opens valve 433, will form decompression state in the chamber 411 thus.The degree of this decompression (vacuum) does not limit especially, but preferred 1 * 10 -7～1 * 10 -4About Torr, more preferably 1 * 10 -6～1 * 10 -4About Torr.
In addition,, promptly under the state of process pump 474, open valve 473, in chamber 411, supply with the gas that is used to be made as under the low reducing atmosphere, will be made as in the chamber 411 under the low reducing atmosphere by operation gas supply mechanism 470.Flow based on the described gas of gas supply mechanism 470 does not limit especially, but about preferred 0.1～10sccm, more preferably about 0.5～5sccm.
And then, at this moment, operation heating arrangements, heated substrates bearing support 412.The temperature of substrate supporting frame 412 is omited different according to the raw-material kind of the kind of first junction film 151 that forms, use when promptly forming first junction film 151, but preferred about 80～600 ℃, more preferably about 100～450 ℃, more preferably about 200～300 ℃.By being set in the described scope, can use organo metallic material described later, will have first junction film, 151 film forming of superior cementability.
Secondly, shutter 421 is made as the state of opening.
Also have, store the heating arrangements that storagetank 462 that solid-state organo metallic material is arranged possesses by operation, under the state that makes the organo metallic material gasification, process pump 464, and, open valve 463, organo metallic material that will gasify or atomize and carrier gas one import in the chamber in the same way thus.
Like this, in described operation under the state of [ii] heated substrates bearing support 412, if in chamber 411, supply with the organo metallic material of gasification or atomizing, then on substrate 20, heat organo metallic material, can under the residual state of an organic part that is contained in organo metallic material, on substrate 20, form first junction film 151 thus.
Promptly, according to mocvd method as can be known, if can form the film that contains metallic atom, then on substrate 20, form first junction film 151 of this organic part performance as the function that breaks away from base 303 so that be contained in the residual mode of an organic part of organo metallic material.
Do not limit especially as the organo metallic material that is used in such mocvd method, but for example, can enumerate 2,4-pentadiol ester-copper (II), three (8-quinoline ester) aluminium (Alq 3), three (4-methyl-8 quinoline ester) aluminium (III) (Almq 3), (8-oxyquinoline) zinc (Znq 2); the copper phthalocyanine; Cu (hexafluoro pentanedione acid esters) (vinyl trimethylsilane) [Cu (hfac) (VTMS)]; Cu (hexafluoro pentanedione acid esters) (2-methyl-1-hexene-3-alkene) [Cu (hfac) (MHY)]; Cu (perfluoro acetyl pyruvate) (vinyl trimethylsilane) [Cu (pfac) (VTMS)]; Cu (perfluoro acetyl pyruvate) (2-methyl-1-hexene-3-alkene) [Cu (pfac) (MHY)] etc. contains the acid amides system of various transition metals; pentanedione acid esters system; the alcoxyl base system; the monosilane system of containing silicon; metal complex with carbonyl system and so on of carboxyl; trimethyl gallium; trimethyl aluminium; the metal alkyl of diethyl zinc and so on; or derivatives thereof etc.Wherein, as organo metallic material, the preferable alloy complex.By using metal complex, under the residual state of an organic part that can be in being contained in metal complex, form first junction film 151 reliably.
In addition, in the present embodiment, by operation gas supply mechanism 470, be made as in the chamber 411 under the low reducing atmosphere, but by being made as under such atmosphere, can on substrate 20, not form pure metal film, film forming under the residual state of an organic part that can be in being contained in organo metallic material.That is, can form both first junction film 151 of excellent as junction film and metal film.
About the preferred 0.1～100ccm of flow of the organo metallic material of gasification or atomizing, more preferably about 0.5～60ccm.Thus, can be with the thickness of homogeneous, and the residual state of an organic part that in organo metallic material, contains, with first junction film, 151 film forming.
As mentioned above, will residue in residue in the film when film forming first junction film 151 as breaking away from the structures that base 303 uses by forming, need in the metal film that forms etc., not import break away from basic, can be with fairly simple operation film forming first junction film 151.
Also have, use a described organic part residual in first junction film 151 that organo metallic material forms its all as break away from base 303 performance functions also can, its part is brought into play functions and also can as breaking away from basic 303.
As mentioned above, can film forming first junction film 151.
In the ink jet recording head 1 of the 3rd above embodiment, also obtain and described first embodiment and identical effect, the effect of second embodiment.
More than, based on illustrated embodiment droplet discharging head of the present invention and droplet ejection apparatus have been described, but the present invention is not limited to these.
For example, in the method for making droplet discharging head of the present invention, be not limited to the structure of described embodiment, the order of operation can entanglement.In addition, can append one or more operation of purpose arbitrarily, delete unwanted operation and also can.
In addition, the joint that the joint method of above-mentioned use junction film is applicable to the parts beyond droplet discharging head above-mentioned also can.
[embodiment]
Secondly, specific embodiments of the invention are described.
1. the manufacturing of ink jet recording head
(embodiment 1)
＜1〉at first, prepares the piezoelectric body layer that the sintered body of stainless steel nozzle plate, monocrystalline silicon making sheet shape mother metal, polyphenylene sulfide (PPS) system diaphragm seal, stainless steel system oscillating plate, lead zirconates constitutes and burn till piezoelectric element and the PPS that the duplexer of the electrode film that the Ag paste forms constitutes and make the box head.
Secondly, mother metal is contained in the chamber of plasma polymerization shown in Figure 10, utilizes the surface treatment of oxygen plasma.
Secondly, carrying out plasma polymerization film (junction film) film forming of surface-treated face with average thickness 200nm.Also have, membrance casting condition is as described below.
＜membrance casting condition 〉
The composition of unstrpped gas: octamethyltrisiloxane
The flow of unstrpped gas: 10sccm
The composition of carrier gas: argon
The flow of carrier gas: 10sccm
The output of high frequency power: 100W
High frequency output density: 25W/cm 2
Cavity indoor pressure: 1Pa (low vacuum)
Processing time: 15 minutes
Substrate temperature: 20 ℃
The plasma polymerization film of film forming is made of the polymer of octamethyltrisiloxane (unstrpped gas) like this, comprising: contain siloxane bond, and have the Si skeleton and the alkyl (breaking away from base) of random atomic structure.
In addition, therewith in the same manner, with condition as follows to the plasma polymerization film irradiation ultraviolet radiation.
＜ultraviolet illuminate condition 〉
The composition of atmosphere gas: atmosphere
The temperature of atmosphere gas: 20 ℃
The pressure of atmosphere gas: atmospheric pressure (100kPa)
Ultraviolet wavelength: 172nm
The ultraviolet irradiation time: 5 minutes
Secondly, irradiation ultraviolet radiation is after after one minute, so that the mode that contacts at the face of the face of the irradiation ultraviolet radiation of the plasma polymerization film of mother metal film forming and the irradiation ultraviolet radiation of the plasma polymerization film of film forming on diaphragm seal, applying mother metal and diaphragm seal.Thus, obtain the conjugant of mother metal and diaphragm seal.
＜2〉secondly, on the diaphragm seal of the conjugant of mother metal and diaphragm seal and on the one side of oscillating plate respectively with described operation＜1 in the same manner with the plasma polymerization film film forming.
Secondly, on the plasma polymerization film that obtains with described operation＜1 irradiation ultraviolet radiation in the same manner.
Also have, irradiation ultraviolet radiation is after after one minute, so that the mode that the face of the face of the irradiation ultraviolet radiation of the plasma polymerization film of film forming and the irradiation ultraviolet radiation of the plasma polymerization film of film forming on oscillating plate contacts on the diaphragm seal of conjugant, applying conjugant and oscillating plate.Thus, obtain the conjugant of mother metal, diaphragm seal and oscillating plate.
＜3〉secondly, diaphragm seal, oscillating plate and with the plasma polymerization film of these adjacency in should form the ejection liquid supply chamber of head the position form through hole.In addition, in oscillating plate, surround the annular section formation through hole of the position of assembling piezoelectric element.Also have, these through holes form by etching method respectively.
＜4〉secondly, the one side of position (area inside of ring-type through hole) on the oscillating plate of the conjugant that has engaged mother metal, diaphragm seal and oscillating plate, the assembling piezoelectric element and piezoelectric element respectively with described operation＜1 in the same manner with the plasma polymerization film film forming.
Secondly, with described operation＜1〉in the same manner, to the plasma polymerization film irradiation ultraviolet radiation that obtains.
Also have, irradiation ultraviolet radiation is after after one minute, so that the mode that the face of the face of the irradiation ultraviolet radiation of the plasma polymerization film of film forming and the irradiation ultraviolet radiation of the plasma polymerization film of film forming on piezoelectric element contacts on the oscillating plate of conjugant, applying conjugant and piezoelectric element.Thus, obtain the conjugant of mother metal, diaphragm seal, oscillating plate and piezoelectric element.
＜5〉secondly, in the conjugant that has engaged mother metal, diaphragm seal and piezoelectric element the one side of the position of assembling box head and box head respectively with described operation＜1 in the same manner with the plasma polymerization film film forming.
Secondly, with described operation＜1〉in the same manner, to the plasma polymerization film irradiation ultraviolet radiation that obtains.
Also have, irradiation ultraviolet radiation is after after one minute, so that the mode, applying conjugant and the box head that contact at the face of the face of the irradiation ultraviolet radiation of the plasma polymerization film of film forming on the oscillating plate of conjugant and the irradiation ultraviolet radiation of the plasma polymerization film of film forming on the box head.Thus, obtained engaging the conjugant of mother metal, diaphragm seal, oscillating plate, piezoelectric element and box head.
＜6〉secondly, about the conjugant that inversion obtains, utilize etching method, the face of the opposite side of the face with having engaged diaphragm seal of mother metal is implemented processing.Also have, form ejection liquid storeroom and ejection liquid supply chamber, obtain spraying the liquid storeroom thus and form substrate at mother metal.
＜7〉secondly, ejection liquid storeroom form on the substrate and the one side of nozzle plate respectively with described operation＜1 in the same manner with the plasma polymerization film film forming.
Secondly, with described operation＜1〉in the same manner, to the plasma polymerization film irradiation ultraviolet radiation that obtains.
Also have, irradiation ultraviolet radiation is after after one minute, so that form the mode that the face of the face of the irradiation ultraviolet radiation of the plasma polymerization film of film forming on the substrate and the irradiation ultraviolet radiation of the plasma polymerization film of film forming on nozzle plate contact, fit ejection liquid storeroom formation substrate and nozzle plate at ejection liquid storeroom.Thus, the conjugant that obtains nozzle plate, mother metal, diaphragm seal, oscillating plate, piezoelectric element and box head is an ink jet recording head.
＜8〉secondly,, simultaneously,, kept 15 minutes with 80 ℃ of heating with the ink jet recording head that the 3MPa compression obtains.Thus, improve the bond strength of ink jet recording head.
(embodiment 2)
Respectively with epoxy adhesive gluing nozzle plate and ejection liquid storeroom form that junction surface beyond the junction surface between the substrate is between mother metal and the diaphragm seal, each junction surface between diaphragm seal and the oscillating plate, between oscillating plate and the piezoelectric element, between oscillating plate and the box head, in addition, with described embodiment 1 in the same manner, make ink jet recording head.
(embodiment 3)
＜1〉at first, prepares the piezoelectric body layer that the sintered body of stainless steel nozzle plate, monocrystalline silicon making sheet shape mother metal, polyphenylene sulfide (PPS) system diaphragm seal, stainless steel system oscillating plate, lead zirconates constitutes and burn till piezoelectric element and the PPS that the duplexer of the electrode film that the Ag paste forms constitutes and make the box head.
Secondly, mother metal is contained in the chamber of plasma polymerization shown in Figure 13, utilizes the surface treatment of oxygen plasma.
Secondly, carrying out the surface-treated face, using ion beam sputtering, will import junction film (average thickness 100nm) film forming of hydrogen atom to ITO.Also have, membrance casting condition is as described below.
The membrance casting condition of＜ion beam sputtering 〉
Target body: ITO
The arrival vacuum of chamber: 2 * 10 -6Torr
Pressure in chamber during film forming: 1 * 10 -3Torr
The flow of hydrogen: 60sccm
Temperature in the chamber: 20 ℃
The accelerating potential of ion beam: 600V
Apply voltage :+400V to the grid of ion generating chamber side
Apply voltage :-200V to the grid of chamber side
Ion beam current: 200mA
Be supplied in the gaseous species of ion generating chamber: Kr gas
Processing time: 20 minutes
The junction film of film forming is made of the film that imports hydrogen atom to ITO like this, contains: metallic atom (indium and tin), the oxygen atom that combines with this metallic atom and the disengaging base (hydrogen atom) that closes at least one reef knot of described metallic atom and described oxygen atom.
In addition, therewith in the same manner, in the one side of diaphragm seal also with the junction film film forming.
Secondly, under condition shown below to the junction film irradiation ultraviolet radiation that obtains.
＜ultraviolet illuminate condition 〉
The composition of atmosphere gas: nitrogen
The temperature of atmosphere gas: 20 ℃
The pressure of atmosphere gas: atmospheric pressure (100kPa)
Ultraviolet wavelength: 172nm
The ultraviolet irradiation time: 5 minutes
Secondly, irradiation ultraviolet radiation is after after one minute, so that the mode that contacts at the face of the face of the irradiation ultraviolet radiation of the junction film of mother metal film forming and the irradiation ultraviolet radiation on the composition surface of film forming on diaphragm seal, applying mother metal and diaphragm seal.Thus, obtain the conjugant of mother metal and diaphragm seal.
＜2〉secondly, on the diaphragm seal of the conjugant of mother metal and diaphragm seal and on the one side of oscillating plate respectively with described operation＜1 in the same manner with the junction film film forming.
Secondly, on the junction film that obtains with described operation＜1 irradiation ultraviolet radiation in the same manner.
Also have, irradiation ultraviolet radiation is after after one minute, so that the mode that the face of the face of the irradiation ultraviolet radiation of the junction film of film forming and the irradiation ultraviolet radiation of the junction film of film forming on oscillating plate contacts on the diaphragm seal of conjugant, applying conjugant and oscillating plate.Thus, obtain the conjugant of mother metal, diaphragm seal and oscillating plate.
＜3〉secondly, diaphragm seal, oscillating plate and with the junction film of these adjacency in should form the ejection liquid supply chamber of head the position form through hole.In addition, in oscillating plate, surround the annular section formation through hole of the position of assembling piezoelectric element.Also have, these through holes form by etching method respectively.
＜4〉secondly, the one side of position (area inside of ring-type through hole) on the oscillating plate of the conjugant that has engaged mother metal, diaphragm seal and oscillating plate, the assembling piezoelectric element and piezoelectric element respectively with described operation＜1 in the same manner with the junction film film forming.
Secondly, with described operation＜1〉in the same manner, to the junction film irradiation ultraviolet radiation that obtains.
Also have, irradiation ultraviolet radiation is after after one minute, so that the mode that the face of the face of the irradiation ultraviolet radiation of the junction film of film forming and the irradiation ultraviolet radiation of the junction film of film forming on piezoelectric element contacts on the oscillating plate of conjugant, applying conjugant and piezoelectric element.Thus, obtain the conjugant of mother metal, diaphragm seal, oscillating plate and piezoelectric element.
＜5〉secondly, in the conjugant that has engaged mother metal, diaphragm seal, oscillating plate and piezoelectric element the one side of the position of assembling box head and box head respectively with described operation＜1 in the same manner with the junction film film forming.
Secondly, with described operation＜1〉in the same manner, to the junction film irradiation ultraviolet radiation that obtains.
Also have, irradiation ultraviolet radiation is after after one minute, so that the mode, applying conjugant and the box head that contact at the face of the face of the irradiation ultraviolet radiation of the junction film of film forming on the oscillating plate of conjugant and the irradiation ultraviolet radiation of the junction film of film forming on the box head.Thus, obtained engaging the conjugant of mother metal, diaphragm seal, oscillating plate, piezoelectric element and box head.
＜6〉secondly, about the conjugant that inversion obtains, utilize etching method, the face of the opposite side of the face with having engaged diaphragm seal of mother metal is implemented processing.Also have, form ejection liquid storeroom and ejection liquid supply chamber, obtain spraying the liquid storeroom thus and form substrate at mother metal.
＜7〉secondly, ejection liquid storeroom form on the substrate and the one side of nozzle plate respectively with described operation＜1 in the same manner with the junction film film forming.
Secondly, with described operation＜1〉in the same manner, to the junction film irradiation ultraviolet radiation that obtains.
Also have, irradiation ultraviolet radiation is after after one minute, so that form the mode that the face of the face of the irradiation ultraviolet radiation of the junction film of film forming on the substrate and the irradiation ultraviolet radiation of the junction film of film forming on nozzle plate contact, fit ejection liquid storeroom formation substrate and nozzle plate at ejection liquid storeroom.Thus, the conjugant that obtains nozzle plate, mother metal, diaphragm seal, oscillating plate, piezoelectric element and box head is an ink jet recording head.
＜8〉secondly,, simultaneously,, kept 15 minutes with 80 ℃ of heating with the ink jet recording head that the 3MPa compression obtains.Thus, improve the bond strength of ink jet recording head.
(embodiment 4)
Except as described below with the junction film film forming, with described embodiment 3 in the same manner, obtain ink jet recording head.
Mother metal is contained in the chamber of film formation device shown in Figure 15, carries out surface treatment based on oxygen plasma.
Secondly, carrying out on the surface-treated face, raw material as 2,4-pentadiol ester-copper (II), are being used mocvd method, with the junction film film forming of average thickness 100nm.Also have, membrance casting condition is as described below.
＜membrance casting condition 〉
Atmosphere in the chamber: nitrogen+hydrogen
Organo metallic material (raw material): 2,4-pentadiol ester-copper (II)
The flow of organo metallic material: 1sccm
Carrier gas: nitrogen
The flow of hydrogen: 0.2sccm
The arrival vacuum of chamber: 2 * 10 -6Torr
Pressure in chamber during film forming: 1 * 10 -3Torr
The temperature of substrate supporting frame: 275 ℃
Processing time: 10 minutes
The junction film of film forming contains copper atom as metallic atom as described above, as breaking away from the residual organic part that is contained in 2,4-pentadiol ester-copper (II) of base.
Also have,, simultaneously,, kept 15 minutes with 120 ℃ of heating with the die head that the 10MPa compression obtains as described above.Thus, improve the bond strength of ink jet recording head.
(comparative example)
Use the bonding all junction surfaces of epoxy adhesive respectively, be that nozzle plate and ejection liquid storeroom form between the substrate, each junction surface between mother metal and the diaphragm seal, between diaphragm seal and the oscillating plate, between oscillating plate and the piezoelectric element, between oscillating plate and the box head, in addition, with described embodiment 1 in the same manner, make ink jet recording head.
2. the evaluation of ink jet recording head
2.1 the evaluation of dimensional accuracy
About the ink jet recording head that obtains at each embodiment and comparative example, size up precision respectively.
Its result, the ink jet recording head that obtains in each embodiment is compared with the ink jet recording head that obtains in each comparative example, all improves dimensional accuracy.
Confirm in addition each ink jet recording head group is gone into ink-jet printer, the result of lettering on printing sheets, group go into to have the printer of the head that each embodiment obtains to go into to have the printer of the head that obtains in each comparative example to compare with group, and the lettering quality is superior.
2.2 the evaluation of resistance to chemical reagents
To the ink jet recording head that obtains at each embodiment and comparative example fill be maintained 80 ℃ ink-jet printer with black liquid (Epson system), kept for three weeks.Then, estimate the state of ink jet recording head.
Its result confirms the immersion that does not almost have to the black liquid at junction surface in the ink jet recording head that obtains in each embodiment.With respect to this, in the ink jet recording head that comparative example obtains, confirm immersion to the black liquid at junction surface.

Claims (35)

1. droplet discharging head is characterized in that having:
Substrate, it is formed with the ejection liquid storeroom of storing ejection liquid;
Nozzle plate, it is arranged on the face of described substrate in the mode that covers described ejection liquid storeroom, and possesses the nozzle bore of described ejection liquid as the drop ejection;
Sealing plate, it is arranged in the mode that covers described ejection liquid storeroom on another face of described substrate,
Described substrate and described nozzle plate engage via second junction film that is provided with on first junction film that is provided with on the surface of described substrate and the surface at described nozzle plate,
Described first junction film and described second junction film comprise respectively: contain siloxanes (key of Si-O) and have the Si skeleton of random atomic structure and the disengaging base that combines with this Si skeleton,
Respectively by giving energy at least a portion zone of described first junction film and described second junction film, make described disengagings base that the near surface at the near surface of described first junction film and described second junction film exists from described Si skeleton disengaging, utilization engages described substrate and described nozzle plate at the cementability that the described zone on the surface of surperficial and described second junction film of described first junction film shows.
2. droplet discharging head according to claim 1, wherein,
In at least one side of described first junction film and described second junction film, from all atoms that constitute, remove the containing ratio of Si atom in the atom behind the H atom and O atom containing ratio add up to 10～90 atom %.
3. droplet discharging head according to claim 1 and 2, wherein,
In at least one side of described first junction film and described second junction film, the existence of Si atom and O atom is than being 3:7～7:3.
4. droplet discharging head according to claim 1 and 2, wherein,
The crystallization degree of described Si skeleton is below 45%.
5. droplet discharging head according to claim 1 and 2, wherein,
At least one side of described first junction film and described second junction film is contained Si-H key.
6. droplet discharging head according to claim 5, wherein,
In the infrared absorption spectrum of the junction film that contains described Si-H key, when the peak intensity that will belong to siloxane bond was made as 1, the peak intensity that belongs to Si-H key was 0.001～0.2.
7. droplet discharging head according to claim 1, wherein,
The described base that breaks away from comprises that being selected from by H atom, B atom, C atom, N atom, O atom, P atom, S atom and halogen is at least a of the group that constitutes of atomic group that atom or these each atoms are configured to combine with described Si skeleton.
8. droplet discharging head according to claim 7, wherein,
Described disengaging base is an alkyl.
9. droplet discharging head according to claim 8, wherein,
In the infrared absorption spectrum of the junction film that contains methyl as described disengaging base, the peak intensity that belongs to siloxane bond was made as 1 o'clock, the peak intensity that belongs to methyl is 0.05～0.45.
10. droplet discharging head according to claim 1, wherein,
At least one side of described first junction film and described second junction film forms by Plasma Polymerization.
11. droplet discharging head according to claim 10, wherein,
At least one side of described first junction film and described second junction film is that main material constitutes with the polysiloxane.
12. droplet discharging head according to claim 11, wherein,
Described polysiloxane is a principal component with the polymer of octamethyltrisiloxane.
13. according to each described droplet discharging head in the claim 10～12, wherein,
In described Plasma Polymerization, the output density of the high frequency when producing plasma is 0.01～100W/cm 2
14. droplet discharging head according to claim 1, wherein,
At least one side's of described first junction film and described second junction film average thickness is 1～1000nm.
15. droplet discharging head according to claim 1, wherein,
At least one side of described first junction film and described second junction film is not for having mobile solid shape film.
16. droplet discharging head according to claim 1, wherein,
Described substrate is that main material constitutes with silicon materials or stainless steel.
17. droplet discharging head according to claim 1, wherein,
Described nozzle plate is that main material constitutes with silicon materials or stainless steel.
18. droplet discharging head according to claim 1, wherein,
The face that contacts with described first junction film of described substrate has been implemented the adhering surface treatment that improves with described first junction film in advance.
19. droplet discharging head according to claim 1, wherein,
The face that contacts with described second junction film of described nozzle plate has been implemented the adhering surface treatment that improves with described second junction film in advance.
20. according to claim 18 or 19 described droplet discharging heads, wherein,
Described surface treatment is a plasma treatment.
21. droplet discharging head according to claim 1, wherein,
Between described substrate and described first junction film, has the intermediate layer.
22. droplet discharging head according to claim 1, wherein,
Between described nozzle plate and described second junction film, has the intermediate layer.
23. according to claim 21 or 22 described droplet discharging heads, wherein,
Described intermediate layer is that main material constitutes with oxide based material.
24. droplet discharging head according to claim 1, wherein,
Giving of described energy is by carrying out to the method for the method of described each junction film irradiation energy line, described each junction film of heating and at least a method that described each junction film is given in the method for compression stress.
25. droplet discharging head according to claim 24, wherein,
Described energy line is the ultraviolet ray of wavelength 150～300nm.
26. droplet discharging head according to claim 24, wherein,
The temperature of described heating is 25～100 ℃.
27. droplet discharging head according to claim 24, wherein,
Described compression stress is 0.2～10MPa.
28. a droplet discharging head is characterized in that having:
Substrate, it is formed with the ejection liquid storeroom of storing ejection liquid;
Nozzle plate, it is arranged on the face of described substrate in the mode that covers described ejection liquid storeroom, and possesses the nozzle bore of described ejection liquid as the drop ejection;
Sealing plate, it is arranged in the mode that covers described ejection liquid storeroom on another face of described substrate,
Described substrate and described nozzle plate engage via second junction film that is provided with on first junction film that is provided with on the surface of described substrate and the surface at described nozzle plate,
Described first junction film and described second junction film comprise respectively: metallic atom, be incorporated into the oxygen atom of this metallic atom and be incorporated at least one side's of described metallic atom and described oxygen atom disengaging base,
Respectively by giving energy at least a portion zone of described first junction film and described second junction film, the described at least one side disengaging that breaks away from base from described metallic atom and described oxygen atom that near surface at the near surface of described first junction film and described second junction film is existed, utilization engages described substrate and described nozzle plate at the cementability that the described zone on the surface of surperficial and described second junction film of described first junction film shows.
29. a droplet discharging head is characterized in that having:
Substrate, it is formed with the ejection liquid storeroom of storing ejection liquid;
Nozzle plate, it is arranged at a face of described substrate in the mode that covers described ejection liquid storeroom, and possesses the nozzle bore of described ejection liquid as the drop ejection;
Sealing plate, it is arranged at another face of described substrate in the mode that covers described ejection liquid storeroom,
Described substrate and described nozzle plate engage via second junction film that is provided with on first junction film that is provided with on the surface of described substrate and the surface at described nozzle plate,
Described first junction film and described second junction film comprise respectively: metallic atom and the disengaging base that constitutes by organic principle,
Respectively by giving energy at least a portion zone of described first junction film and described second junction film, make described disengagings base that the near surface at the near surface of described first junction film and described second junction film exists from institute's junction film disengaging, utilization engages described substrate and described nozzle plate at the cementability that the described zone on the surface of surperficial and described second junction film of described first junction film shows.
30. according to claim 1,28 or 29 described droplet discharging heads, wherein,
Described substrate engages via the junction film identical with described second junction film that is provided with on junction film identical with described first junction film that is provided with on the surface of described substrate and the surface at described sealing plate with described sealing plate.
31. according to claim 1,28 or 29 described droplet discharging heads, wherein,
Described sealing plate is that the duplexer that stacked multilayer forms constitutes,
The interlayer of at least one group of adjacency layer engages via the junction film identical with described second junction film that is provided with on junction film identical with described first junction film that is provided with on the surface of a side layer and the surface at described the opposing party's layer in the layer in the described duplexer.
32. according to claim 1,28 or 29 described droplet discharging heads, wherein,
This droplet discharging head also has vibrating mechanism, and described vibrating mechanism is arranged at a side opposite with described substrate of described sealing plate, and makes described sealing plate vibration,
Described sealing plate engages via the junction film identical with described second junction film that is provided with on junction film identical with described first junction film that is provided with on the surface of described sealing plate and the surface at described vibrating mechanism with described vibrating mechanism.
33. droplet discharging head according to claim 32,
Described vibrating mechanism comprises piezoelectric element.
34. according to claim 1,28 or 29 described droplet discharging heads, wherein,
This droplet discharging head also has: the box head that is provided with in the side opposite of described sealing plate with described substrate,
Described sealing plate engages via reaching the junction film identical with described second junction film that is provided with at the junction film identical with described first junction film that is provided with on the surface of described sealing plate on the surface of described box head with described box head.
35. a droplet ejection apparatus is characterized in that,
Possess: each described droplet discharging head in the claim 1～34.
CN2008101748052A 2007-11-05 2008-11-05 Droplet ejection head and droplet ejection apparatus Expired - Fee Related CN101428502B (en)

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CN111613717B (en) * 2019-02-26 2023-07-28 精工爱普生株式会社 Piezoelectric element, liquid ejection head, and printer

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