CN101425817A - Device for generating ultra-wideband pulse based on dual electrode modulator - Google Patents

Abstract

The invention discloses a device generating a super broadband pulse based on a double-electrode Mach-Zehnder modulator, which relates to the field of optical fiber communication. The connection mode is as follows: the output end of a laser (1) is connected with the optical loading wave input end of a Mach-Zehnder modulator (2), the output end of a Gaussian pulse train generator (31) is connected with the modulation port of an upper arm of the double-electrode Mach-Zehnder modulator, the output end of a Gaussian pulse train generator (32) is connected with the modulation port of a lower arm of the double-electrode Mach-Zehnder modulator (2), and the output end of the double-electrode Mach-Zehnder modulator (2) is connected with the optical input port of an optical-electric diode (4). An optical signal outputted by the modulator includes the modulation information of different phase positions by the connection, and the external difference of the optical-electric diode (4) is used for generating optical current with the modulation information. The super broadband pulse in accordance with the FCC definition can be generated by adjusting a pulse time-delay parameter or a wave-shaped parameter.

Description

Produce the ultra-short pulse flushing device based on double-electrode modulator

Technical field

The present invention relates to optical fiber communication, ultra-wideband pulse generation technique, is a kind of device that utilizes the bipolar electrode MZ Mach-Zehnder to produce ultra-wideband pulse specifically.

Background technology

Super-broadband tech UWB (Ultra-wideband) is a kind of wireless carrier communication technology, promptly do not adopt sine wave, but utilize the non-sinusoidal waveform burst pulse of nanosecond to transmit data, have the transmission rate height, ability of anti-multipath is strong, low in energy consumption, cost is low, penetration capacity is strong, low probability of intercept, share characteristics such as frequency spectrum with existing other wireless communication systems, be mainly used in military radar, location and the communication system.In February, 2002, FCC (FCC) has ratified the UWB technology and has been used for civilian, regulation according to FCC, the bandwidth frequency of 7.5GHz between from 3.1GHz to 10.6GHz is the employed frequency range of UWB, the 10dB minimum bandwidth 500MHz of regulation UWB signal, maximum power spectral densities (PSD) is restricted to-and 41.3dBm/MHz to be to improve the anti-interception capability of UWB signal.But the coverage of UWB signal has equally also been dwindled in the restriction of power spectral density, the UWB-over-fiber technology can address this problem, be central station with the base station between be connected by optical fiber, optical fiber has the advantage that loss is low and bandwidth is big, utilize Optical Fiber Transmission UWB signal easily the UWB signal to be sent to outside the several hundred kilometers, this technology has become the one preferred technique of individual radio local area network (LAN).

The optics generation technique of UWB signal is the focus of research, specifically utilize the cross-gain modulation, utilize semiconductor optical amplifier saturation gain effect, utilize methods such as electric light mach zhender (MZ) modulator side cut effect and light spectrum reshaping, these methods all respectively have characteristics and are applied to different occasions, but simple in structure, with low cost is the trend of UWB-over-fiber fundamental characteristic and technical development.

Summary of the invention

Original intention of the present invention is, utilizes the existing standard light communication apparatus, and a kind of cheap practical plan is provided, and meets the ultra-wideband pulse of the FCC of U.S. telecommunication union definition in order to generation.Its core devices is the bipolar electrode MZ Mach-Zehnder, modulator two arms up and down connects modulated pulse trains respectively, by modulator parameter being set and regulating modulating pulse delay parameter and waveform parameter, make the light signal of output have different phase characteristics, utilize photodiode output ultrashort pulse signal.

Technical scheme of the present invention:

Produce the ultra-short pulse flushing device based on double-electrode modulator, this device comprises: laser, bipolar electrode MZ Mach-Zehnder, the first Gaussian pulse train generating apparatus, second Gaussian pulse train generating apparatus and the photodiode.

Specifically be connected to:

Laser output connects bipolar electrode MZ Mach-Zehnder light carrier input, first Gaussian pulse train generating apparatus output termination bipolar electrode MZ Mach-Zehnder upper arm modulation port, second Gaussian pulse train generating apparatus output termination bipolar electrode MZ Mach-Zehnder underarm modulation port, bipolar electrode MZ Mach-Zehnder output port connects the optical input of photodiode.

The upper arm modulation voltage V of bipolar electrode MZ Mach-Zehnder is set _Mod1Underarm modulation voltage V with the bipolar electrode MZ Mach-Zehnder _Mod2, satisfy V _Mod1=V _Mod2=V _π/ 2.

The upper arm bias voltage V of bipolar electrode MZ Mach-Zehnder is set _Bias1Underarm bias voltage V with the bipolar electrode MZ Mach-Zehnder _Bias2, satisfy V _Bias1=0, V _Bias2=V _π/ 2; V _πHalf-wave voltage for the bipolar electrode MZ Mach-Zehnder.

Contain by the photodiode output signal $\sin \left[\frac{\mathrm{\π}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]$ Composition.

Produce the ultra-short pulse flushing device based on double-electrode modulator, concrete control method: the 1) Gaussian pulse train that produces by the first Gaussian pulse train generating apparatus $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}}$ , by the Gaussian pulse train of second Gaussian pulse train generating apparatus generation $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\μ}}{T_{\mathrm{FWHM}}}\right)}^{2N}}$ , B is the bit value 1 by the decision of input bit sequence, T _FWHMBe half maximum all-wave time, N is the exponent number of Gaussian pulse, and N=1, Ap are the modulation sequence amplitude, and μ is the time-delay coefficient 20ps～100ps of the second Gaussian pulse train generating apparatus, regulates g ₂(t) pulse delay parameter μ makes by in photodiode (4) output signal

Signal pulse meets the ultra-wideband pulse standard that U.S. telecommunication union defines.

2) Gaussian pulse train that produces by the first Gaussian pulse train generating apparatus $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train generating apparatus $g_2\left(t\right)={\mathrm{B\λA}}_p{e}^{-\frac{1}{2}{\left(\frac{t\×\mathrm{\δ}}{T_{\mathrm{FWHM}}}\right)}^{2N}}$ , B is the bit value 1 by the decision of input bit sequence, T _FWHMBe half maximum all-wave time, N is the exponent number of Gaussian pulse, N=1, Ap is a modulated pulse trains, λ is that the amplitude of the second Gaussian pulse train generating apparatus is regulated parameter 0.5～0.9, and δ regulates parameter 0.2～0.5 the half maximum all-wave time of the second Gaussian pulse train generating apparatus, regulates g ₂(t) pulse parameter λ and δ make by in photodiode (4) output signal

Signal pulse meets the ultra-wideband pulse standard that U.S. telecommunication union defines.

Produce the operation principle of the device of ultra-wideband pulse based on double-electrode modulator:

1) according to concrete connected mode, by bipolar electrode MZ Mach-Zehnder output light signal

$E\left(t\right)=E_c\exp [\mathrm{<figure-callout\; id="2"\; label="j"\; filenames="A200810239659E00122.png,A200810239659E00131.png"\; state="\{\{state\}\}">j</figure-callout>}2\mathrm{\&pi;}{f}_{c}t+\mathrm{j\&pi;}\&times;\frac{{\mathrm{<figure-callout\; id="1"\; label="V\; mod"\; filenames="A200810239659E00122.png,A200810239659E00132.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_1\left(t\right)+V_{\mathrm{bias}1}}{V_{\mathrm{\&pi;}}}]$

$+E_c\exp [\mathrm{<figure-callout\; id="2"\; label="j"\; filenames="A200810239659E00122.png,A200810239659E00131.png"\; state="\{\{state\}\}">j</figure-callout>}2\mathrm{\&pi;}{f}_{c}t+\mathrm{j\&pi;}\&times;\frac{{\mathrm{<figure-callout\; id="2"\; label="V\; mod"\; filenames="A200810239659E00122.png,A200810239659E00131.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_2\left(t\right)+V_{\mathrm{bias}2}}{V_{\mathrm{\&pi;}}}]$

Contain two groups of different phase-modulated information, E among the E (t) _cBe the amplitude of light wave electric field, f _cBe the light wave centre frequency.

2) then, utilize photodiode that light field is converted into photoelectric current

$i\left(t\right)\&Proportional;(1/2)E\left(t\right)E{\left(t\right)}^{*}=\frac{1}{2}{\mathrm{<figure-callout\; id="2"\; label="E\; c"\; filenames="A200810239659E00122.png,A200810239659E00131.png"\; state="\{\{state\}\}">E</figure-callout>}}_c^{}\left\{\begin{array}{c}2+\exp [+j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}({\mathrm{<figure-callout\; id="1"\; label="V\; mod"\; filenames="A200810239659E00122.png,A200810239659E00132.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_1\left(t\right)+V_{\mathrm{bias}1})-j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}({\mathrm{<figure-callout\; id="2"\; label="V\; mod"\; filenames="A200810239659E00122.png,A200810239659E00131.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_2\left(t\right)+V_{\mathrm{bias}2})]\\ +\exp [+j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}({\mathrm{<figure-callout\; id="2"\; label="V\; mod"\; filenames="A200810239659E00122.png,A200810239659E00131.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_2\left(t\right)+V_{\mathrm{bias}2})-j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}({\mathrm{<figure-callout\; id="1"\; label="V\; mod"\; filenames="A200810239659E00122.png,A200810239659E00132.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_1\left(t\right)+V_{\mathrm{bias}1})]\end{array}\right\}$

Utilize Euler's formula to launch to obtain photoelectric current

$i\left(t\right)={2i}_0+{2i}_0\cos [j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}({\mathrm{<figure-callout\; id="1"\; label="V\; mod"\; filenames="A200810239659E00122.png,A200810239659E00132.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_1\left(t\right)+V_{\mathrm{bias}1})-j\frac{\mathrm{\&pi;}}{V_{\mathrm{\&pi;}}}({\mathrm{<figure-callout\; id="2"\; label="V\; mod"\; filenames="A200810239659E00122.png,A200810239659E00131.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{mod}}\&times;g_2\left(t\right)+V_{\mathrm{bias}2})]$

3) system parameters V is set _Bias1=0, V _Bias2=V _π/ 2, V _Mod1=V _Mod2=V _π/ 2 pulse signals after obtaining simplifying

$i_{\mathrm{mm}}\left(t\right)={2i}_0\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]$

Pulse train g from the visible modulated optical carrier phase place of following formula ₁(t) and g ₂(t), finally become through after the conversion

Modulated photocurrent intensity is by regulating impulse sequence g ₂(t) pulse delay parameter μ or g ₁(t) and g ₂(t) waveform parameter A _p, T _FWHMAll can generate the UWB pulse signal that meets by the definition of U.S. telecommunication union.

Beneficial effect of the present invention is specific as follows:

The present invention does not relate to complexity and expensive equipment, only adopt the optical communication equipment of standard, make full use of the nonlinear characteristic of bipolar electrode MZ Mach-Zehnder, generated ultra-wideband pulse, and the millimeter wave ultra-wideband pulse that generates had adjustability, help popularizing and using of super-broadband tech.

Description of drawings

Fig. 1 produces the ultra-wideband pulse principle schematic based on double-electrode modulator.

The impulse waveform of Fig. 2 control method one changes schematic diagram.

The pulse frequency spectrogram of Fig. 3 control method one.

The impulse waveform of Fig. 4 control method two changes schematic diagram.

The pulse frequency spectrogram of Fig. 5 control method two.

Embodiment

Below in conjunction with accompanying drawing the present invention is further described.

Produce the ultra-short pulse flushing device based on double-electrode modulator, see Fig. 1, this device comprises: this device comprises: laser 1, bipolar electrode MZ Mach-Zehnder 2, the first Gaussian pulse train generating apparatus 31, the second Gaussian pulse train generating apparatus 32 and photodiode 4; Specifically be connected to:

Laser 1 output termination bipolar electrode MZ Mach-Zehnder 2 light carrier inputs, the first Gaussian pulse train generating apparatus, 31 output termination bipolar electrode MZ Mach-Zehnders, 2 upper arm modulation port, the second Gaussian pulse train generating apparatus, 32 output termination bipolar electrode MZ Mach-Zehnders, 2 underarm modulation port, bipolar electrode MZ Mach-Zehnder 2 output ports connect the optical input of photodiode 4.

The upper arm modulation voltage V of bipolar electrode MZ Mach-Zehnder 2 is set _Mod1The underarm modulation voltage V of=2V and bipolar electrode MZ Mach-Zehnder 2 _Mod2=2V.

The upper arm bias voltage V of bipolar electrode MZ Mach-Zehnder 2 is set _Bias1=0 and the underarm bias voltage V of bipolar electrode MZ Mach-Zehnder 2 _Bias2=2V, the half-wave voltage V of bipolar electrode MZ Mach-Zehnder 2 _π=4V.

Contain by photodiode 4 output signals $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]$ Composition.

Produce the control method of ultra-short pulse flushing device based on double-electrode modulator:

One, the Gaussian pulse train that produces by the first Gaussian pulse train generating apparatus $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train generating apparatus $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\&mu;}}{T_{\mathrm{FWHM}}}\right)}^{2N}}$ , B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=50ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=4a.u., the time-delay coefficient μ=85ps of the second Gaussian pulse train generating apparatus; According to above parameter, draw g ₁(t) the waveform schematic diagram 311, g ₂(t) the waveform schematic diagram 321, as shown in Figure 2, and the ultra-wideband impulse signal of generation

Time domain signal Figure 41 is illustrated in figure 2 as a gaussian-shape single cycle pulse, frequency domain schematic diagram 411 as shown in Figure 3, this ultra-short pulse is punched in 3.1GHz～10.6GHz frequency band range,-10dB bandwidth is 2.57GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to ultra-wideband pulse.

Two, the Gaussian pulse train that produces by the first Gaussian pulse train generating apparatus $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train generating apparatus $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\&mu;}}{T_{\mathrm{FWHM}}}\right)}^{2N}}$ , B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=50ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=4a.u., the time-delay coefficient μ=50ps of the second Gaussian pulse train generating apparatus; According to above parameter, draw g ₁(t) the waveform schematic diagram 311, g ₂(t) the waveform schematic diagram 322, as shown in Figure 2, and the ultra-wideband impulse signal of generation

Time domain signal Figure 42 is illustrated in figure 2 as a gaussian-shape single cycle pulse, frequency domain schematic diagram 421 as shown in Figure 3, this ultra-short pulse is punched in 3.1GHz～10.6GHz frequency band range,-10dB bandwidth is 3.16GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to ultra-wideband pulse.

Three, the Gaussian pulse train that produces by the first Gaussian pulse train generating apparatus $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train generating apparatus $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\&mu;}}{T_{\mathrm{FWHM}}}\right)}^{2N}}$ , B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=50ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=1a.u., the time-delay coefficient μ=25ps of the second Gaussian pulse train generating apparatus; According to above parameter, draw g ₁(t) the waveform schematic diagram 311, g ₂(t) the waveform schematic diagram 323, as shown in Figure 2, and the ultra-wideband impulse signal of generation

Time domain signal Figure 43 is illustrated in figure 2 as a gaussian-shape single cycle pulse, frequency domain schematic diagram 431 as shown in Figure 3, this ultra-short pulse is punched in 3.1GHz～10.6GHz frequency band range,-10dB bandwidth is 3.47GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to ultra-wideband pulse.

Four, the Gaussian pulse train that produces by the first Gaussian pulse train generating apparatus $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train generating apparatus $g_2\left(t\right)={\mathrm{B\&lambda;A}}_p{e}^{-\frac{1}{2}{\left(\frac{t\&times;\mathrm{\&delta;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=30ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=1a.u. regulates g ₂(t) pulse parameter λ=0.75 and δ=0.3.According to above parameter, draw g ₁(t) the waveform schematic diagram 311, g ₂(t) the waveform schematic diagram 324, as shown in Figure 4, and the ultra-wideband impulse signal of generation

Time domain signal Figure 44 is illustrated in figure 2 as a gaussian-shape doublet pulse, frequency domain schematic diagram 441 as shown in Figure 5, this ultra-short pulse is punched in 3.1GHz～10.6GHz frequency band range,-10dB bandwidth is 6GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to ultra-wideband pulse.

Five, the Gaussian pulse train that produces by the first Gaussian pulse train generating apparatus $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train generating apparatus $g_2\left(t\right)={\mathrm{B\&lambda;A}}_p{e}^{-\frac{1}{2}{\left(\frac{t\&times;\mathrm{\&delta;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=30ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=1a.u. regulates g ₂(t) pulse parameter λ=0.9 and δ=0.5.According to above parameter, draw g ₁(t) the waveform schematic diagram 311, g ₂(t) the waveform schematic diagram 325, as shown in Figure 4, and the ultra-wideband impulse signal of generation

Time domain signal Figure 45 is illustrated in figure 2 as a gaussian-shape doublet pulse, frequency domain schematic diagram 451 as shown in Figure 5, this ultra-short pulse is punched in 3.1GHz～10.6GHz frequency band range,-10dB bandwidth is 7.5GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to ultra-wideband pulse.

Six, the Gaussian pulse train that produces by the first Gaussian pulse train generating apparatus $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train generating apparatus $g_2\left(t\right)={\mathrm{B\&lambda;A}}_p{e}^{-\frac{1}{2}{\left(\frac{t\&times;\mathrm{\&delta;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is bit value 1, the half maximum all-wave time T by the decision of input bit sequence _FWHM=30ps, the exponent number N=1 of Gaussian pulse, modulation sequence amplitude A p=1a.u. regulates g ₂(t) pulse parameter λ=0.5 and δ=0.5.According to above parameter, draw g ₁(t) the waveform schematic diagram 311, g ₂(t) the waveform schematic diagram 326, as shown in Figure 4, and the ultra-wideband impulse signal of generation Time domain signal Figure 46 is illustrated in figure 2 as a gaussian-shape doublet pulse, frequency domain schematic diagram 461 as shown in Figure 5, this ultra-short pulse is punched in 3.1GHz～10.6GHz frequency band range,-10dB bandwidth is 7.5GHz, maximum power spectral densities is-41.3dBm/MHz to meet the definition of U.S. telecommunication union to ultra-wideband pulse.

Claims (3)

1. produce the ultra-short pulse flushing device based on double-electrode modulator, it is characterized in that: this device comprises: laser (1), bipolar electrode MZ Mach-Zehnder (2), the first Gaussian pulse train generating apparatus (31), the second Gaussian pulse train generating apparatus (32) and photodiode (4); Specifically be connected to:

Laser (1) output termination bipolar electrode MZ Mach-Zehnder (2) light carrier input, the first Gaussian pulse train generating apparatus (31) output termination bipolar electrode MZ Mach-Zehnder (2) upper arm modulation port, the second Gaussian pulse train generating apparatus (32) output termination bipolar electrode MZ Mach-Zehnder (2) underarm modulation port, bipolar electrode MZ Mach-Zehnder (2) output port connects the optical input of photodiode (4);

The upper arm modulation voltage V of bipolar electrode MZ Mach-Zehnder (2) is set _Mod1Underarm modulation voltage V with bipolar electrode MZ Mach-Zehnder (2) _Mod2, satisfy V _Mod1=V _Mod2=V _π/ 2;

The upper arm bias voltage V of bipolar electrode MZ Mach-Zehnder (2) is set _Bias1Underarm bias voltage V with bipolar electrode MZ Mach-Zehnder (2) _Bias2, satisfy V _Bias1=0, V _Bias2=V _π/ 2; V _πHalf-wave voltage for bipolar electrode MZ Mach-Zehnder (2);

Contain by photodiode (4) output signal $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]$ Composition;

Gaussian pulse train (the g that the ultra-wideband pulse standard adjustment that defines by U.S. telecommunication union is produced by the first Gaussian pulse train generating apparatus (31) ₁(t) and regulate the Gaussian pulse train g that produces by the second Gaussian pulse train generating apparatus (32) ₂(t)), by photodiode (4) output ultra-wideband pulse.

2. according to claim 1 based on double-electrode modulator generation ultra-short pulse flushing device, it is characterized in that: by the Gaussian pulse train of the first Gaussian pulse train generating apparatus (31) generation $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train generating apparatus (32) $g_2\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t-\mathrm{\&mu;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is the bit value 1 by the decision of input bit sequence, T _FWHMBe half maximum all-wave time, N is the exponent number N=1 of Gaussian pulse, and Ap is the modulation sequence amplitude; μ is the time-delay coefficient 20ps～100ps of the second Gaussian pulse train generating apparatus (32), regulates g ₂(t) pulse delay parameter μ makes by in photodiode (4) output signal $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]$ Signal pulse meets the ultra-wideband pulse standard that U.S. telecommunication union defines.

3. according to claim 1 based on double-electrode modulator generation ultra-short pulse flushing device, it is characterized in that: by the Gaussian pulse train of the first Gaussian pulse train generating apparatus (31) generation $g_1\left(t\right)={\mathrm{BA}}_p{e}^{-\frac{1}{2}{\left(\frac{t}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ Gaussian pulse train by the generation of the second Gaussian pulse train generating apparatus (32) $g_2\left(t\right)={\mathrm{B\&lambda;A}}_p{e}^{-\frac{1}{2}{\left(\frac{t\&times;\mathrm{\&delta;}}{T_{\mathrm{FWHM}}}\right)}^{2N}},$ B is the bit value 1 by the decision of input bit sequence, T _FWHMIt was half maximum all-wave time, N is the exponent number N=1 of Gaussian pulse, and Ap is the modulation sequence amplitude, and λ is that the amplitude of the second Gaussian pulse train generating apparatus is regulated parameter 0.5～0.9, δ regulates parameter 0.2～0.5 the half maximum all-wave time of the second Gaussian pulse train generating apparatus, regulates g ₂(t) pulse parameter λ and δ make by in photodiode (4) output signal $\sin \left[\frac{\mathrm{\&pi;}}{2}(g_1\left(t\right)-g_2\left(t\right))\right]$ Signal pulse meets the ultra-wideband pulse standard that U.S. telecommunication union defines.

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