CN101425357A - Huge magnetostriction nano multilayered membrane, preparation and application - Google Patents
Huge magnetostriction nano multilayered membrane, preparation and application Download PDFInfo
- Publication number
- CN101425357A CN101425357A CNA2007100475759A CN200710047575A CN101425357A CN 101425357 A CN101425357 A CN 101425357A CN A2007100475759 A CNA2007100475759 A CN A2007100475759A CN 200710047575 A CN200710047575 A CN 200710047575A CN 101425357 A CN101425357 A CN 101425357A
- Authority
- CN
- China
- Prior art keywords
- sputtering
- nano
- tbfe
- multilayer film
- ndfeb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a giant magnetostrictive nano-multilayer film and a preparation method and application thereof. The nano-multilayer film is a multilayer film material with magnetostrictive performance which is sputtered by magnetic control on the single crystal silicon surface; the nano-multilayer film comprises FeAl, TbFe 2 and NdFeB material layers; and the single crystal silicon is provided with (100) orientation. Compared with the prior art, the nano-multilayer film has the advantages of simple structure, smaller saturation magnetic field strength and coercive force, excellent low-field magnetostrictive performance and stable performances, and can be suitable for large-scale industrial production.
Description
Technical field
The invention belongs to film and preparing technical field thereof, relate to a kind of huge magnetostriction nano multilayered membrane and its production and application.
Background technology
Fast development along with MEMS (micro electro mechanical system) (MEMS), a low high-sensitive giant magnetostrictive driver thin-film material is changed intelligent thin-film material as the novel electromechanical of newly-developed, wide application prospect is arranged, as utilize high electromechanical coupling factor of giant magnetostriction material and high electromechanical conversion efficiency, can be used for developing microminaturization, tunable surface acoustic wave (SAW) device; Utilize high magnetostrictive strain coefficient, can make all kinds of military MEMS servers,, can be applicable to fields such as fuel injection system, biological DNA detection as precision positioning device, micro motor, fluid control systems.
TbFe
2Permanent magnetic material has maximum mangneto telescopicing performance in theory, since high anisotropy, TbFe
2Material only just shows big Magnetostrictive Properties under higher external magnetic field effect, this has brought bigger problem with regard to the practical application of giving this material, particularly to miniaturization of devices, integrated unfavorable, to the thin-film material that the MEMS system uses, this problem is more outstanding.Because in the microdevice of being made by film, owing to be subject to processing the restriction of means and prior art, externally-applied magnetic field generally is no more than the hundreds of oersted in the device.Therefore, the low magnetostriction performance after the match of raising material is to realize the key of material practical application.
Summary of the invention
Purpose of the present invention is exactly to provide a kind of intelligent conversion material that is used for MEMS (micro electro mechanical system) for the defective that overcomes above-mentioned prior art existence, have low saturation magnetic field intensity and coercive force, good low magnetostriction performance, huge magnetostriction nano multilayered membrane of simple in structure and suitable large-scale industrial production and its production and application.
Purpose of the present invention can be achieved through the following technical solutions: a kind of huge magnetostriction nano multilayered membrane, this nano-multilayer film is a magnetron sputtering giant magnetostrictive driver performance multi-layer membrane material on monocrystalline silicon surface, it is characterized in that described nano-multilayer film comprises FeAl, TbFe
2With the NdFeB material layer, described monocrystalline silicon has (100) orientation.
Described FeAl, TbFe
2Sputtering sedimentation thickness with the NdFeB material layer: FeAl is that 5～8nm, TbFe are that 8～12nm, NdFeB are 5～8nm.
The total number of plies of described multilayer film is 20～100 layers.
A kind of its preparation method of huge magnetostriction nano multilayered membrane is characterized in that, this method comprises the following steps:
(1) distance of adjustment target platform and substrate turntable is 100mm～200mm; FeAl, TbFe are installed
2, the NdFeB target is on target platform separately;
(2) monocrystalline silicon (100) substrate is boiled with the concentrated sulfuric acid after, use the acetone ultrasonic waves for cleaning, in hydrofluoric acid solution, soak 30min then, use deionized water and acetone successively after the ultrasonic cleaning again, monocrystalline silicon (100) substrate is placed on the filter paper dries, be installed on the substrate turntable;
(3) vacuumize;
(4) high-purity argon gas is introduced sputtering chamber, make the partial pressure value of argon gas reach 0.2～1.2Pa;
(5) each target is carried out pre-sputter 1～10min;
(6) monocrystalline silicon substrate is carried out reverse sputtering 5～15min;
(7) open the target power supply of required separately sputtering sedimentation target successively, adjust the substrate turntable, and press FeAl, TbFe
2, NdFeB carries out the sputtering sedimentation target in proper order;
(8) utilize the multi-target magnetic control sputtering technology on monocrystalline silicon substrate, alternately to deposit FeAl/TbFe
2/ NdFeB/TbFe
2/ FeAl/TbFe
2/ NdFeB, the monocrystalline silicon substrate temperature is 100 ℃～300 ℃, sputtering sedimentation is finished, and takes out the monocrystalline silicon substrate that sputter has nano-multilayer film;
(9) sputter there is the monocrystalline silicon substrate of nano-multilayer film put into vacuum annealing furnace and heat-treats, promptly get product with the stove cooling then.
Vacuumizing in the described step (3) makes sputtering chamber vacuum degree be lower than 1.4 * 10
-4Pa.
The power of the sputter in the described step (5) is 20～150W.
The power of the sputter in the described step (6) is 100～150W.
Each layer sedimentary condition is in the described step (7): the FeAl layer: sputtering power 50～100W, Sputtering Ar Pressure 0.2～0.6Pa, thin film sputtering speed 0.1～0.2nm/s, thin film deposition thickness 5～8nm; TbFe
2Layer: sputtering power 40～100W Sputtering Ar Pressure 0.2～0.6Pa, thin film sputtering speed 0.1～0.2nm/s, thin film deposition thickness 8～12nm; NdFeB layer: sputtering power 80～150W, Sputtering Ar Pressure 0.2～0.6Pa, thin film sputtering speed 0.1～0.2nm/s, thin film deposition thickness 5～8nm; It is 20～100 layers that described sputter has the total number of plies of multilayer film of the monocrystalline silicon substrate of nano-multilayer film.
The annealing temperature of the Technology for Heating Processing of described step (9) is: 200 ℃～600 ℃, programming rate is 1 ℃/s, annealing time: 30min～120min; Vacuum degree: be lower than 5 * 10
-4
A kind of application of huge magnetostriction nano multilayered membrane is characterized in that, described nano-multilayer film is applied to make precision positioning device, micro motor or fluid control systems.
Compared with prior art, the present invention is sputtering sedimentation FeAl:5～10nm, TbFe successively on (100) monocrystalline silicon substrate surface
2: 5～10nm, NdFeB:5～10nm material layer.Simple in structure and the saturation magnetostriction coefficient of this huge magnetostriction nano multilayered membrane can reach 581ppm, and under the 300Oe outer field action, its magnetostriction coefficient can reach 153ppm.This multilayer film mainly utilizes the multi-target magnetic control sputtering technology alternately to deposit on monocrystalline silicon substrate and obtains nano-multilayer film, and multilayer film is carried out vacuum annealing handle, the multi-layer film material of preparation is simple in structure, have less saturation magnetic field intensity, coercive force, low good magnetostriction performance, and stable performance can be fit to large-scale industrial production.
Description of drawings
Fig. 1 is a kind of structural representation of huge magnetostriction nano multilayered membrane;
Fig. 2 for preparation attitude and 350 ℃ * 60min vacuum annealing after { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50The XRD figure spectrum of multilayer film;
Fig. 3 for preparation attitude TbFe monofilm and { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50The multilayer film magnetic hysteresis loop;
Fig. 4 is for preparing attitude, 250 ℃ * 60min and 350 ℃ * 60min annealed state { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50The multilayer film magnetic hysteresis loop;
Fig. 5 is 250 ℃ * 60min, and 350 ℃ * 60min anneals { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50Multilayer film magnetostriction curve chart;
Wherein, 1 is monocrystalline silicon substrate, 2 is FeAl soft magnetic film layer, 3 is TbFe magnetostrictive thin film layer, the 4th, the NdFeB amorphous magnetic layer, 5 is multilayer film magnetostriction coefficient curve after 250 ℃ * 60min annealing in process, and 6 is multilayer film magnetostriction coefficient curve after 350 ℃ * 60min annealing in process, and 7 is annealed state multilayer film magnetostriction coefficient curve.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
As shown in Figure 1, a kind of huge magnetostriction nano multilayered membrane that is used for making precision positioning device, this nano-multilayer film is a magnetron sputtering giant magnetostrictive driver performance multi-layer membrane material on monocrystalline silicon surface, described monocrystalline silicon has (100) orientation, and described nano-multilayer film comprises monocrystalline silicon substrate 1, FeAl soft magnetic film layer 2, TbFe
2Magnetostrictive thin film layer 3 and NdFeB amorphous magnetic layer 4, this huge magnetostriction shrinking structure { (FeAl)
x/ (TbFe
2)
y/ (NdFeB)
z}
n(film thickness x=8nm, y=10nm, z=8nm, the total number of plies n=50 of film).
The preparation method of above-mentioned huge magnetostriction nano multilayered membrane may further comprise the steps:
1, prepares 10 * 10mm
2Square monocrystalline silicon (100) substrate boils removal surface blot and impurity with the concentrated sulfuric acid, uses the acetone ultrasonic cleaning, removes surface oxide layer, deionized water ultrasonic cleaning, acetone ultrasonic cleaning with hydrofluoric acid dips 30min then; Then be placed on the filter paper and dry, be installed on the substrate turntable, the adjustment target-substrate distance is 100mm;
2, the sputter vacuum chamber is evacuated down to 1.4 * 10
-4Pa feeds argon gas as working gas, and partial pressure of ar gas is 0.2Pa.Add the 60W sputtering power, substrate does not heat, the thick amorphous FeAl film of deposition 8nm;
3, rotate substrate to the TbFe target position, add the 60W sputtering power, substrate does not heat, the thick amorphous TbFe film of deposition 10nm;
4, rotate substrate again to the NdFeB target position, add the 80W sputtering power, substrate does not heat, the thick amorphous NdFeB film of deposition 8nm;
5, amount to 50 cycles of plated film;
6, multilayer film is placed vacuum annealing furnace carry out 250 ℃ respectively, the annealing in process of 350 ℃ * 60min, 1 ℃/s of programming rate programming rate cools off with stove.
The micro-structural of multilayer film is determined by the D/max-rB X-ray diffractometer before and after the heat treatment, and as shown in Figure 2, as can be seen, the preparation attitude { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50Multilayer film is between 30 °～35 ° and 40 °～45 ° careless and sloppy peaks that have two disperses at 2 θ, illustrates that multilayer film is to be made of two different amorphous phases.Multilayer film still keeps two amorphous diffraction maximums after 350 ℃ * 60min vacuum annealing, significant change does not take place its intensity yet.This shows that multi-layer film structure is comparatively stable.
Thin film magnetic can adopt vibrating specimen magnetometer (VSM) to test from the face direction parallel with external magnetic field, and Fig. 3 for preparation attitude TbFe monofilm and { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50The multilayer film magnetic hysteresis loop, as can be seen, the saturation magnetization of multilayer film is greater than the saturation magnetization of TbFe monofilm, and makes direction of easy axis be parallel to face by turning to perpendicular to face, therefore, when external magnetic field is parallel to film, { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50The magnetosensitive of multilayer film is higher than the magnetosensitive of TbFe monofilm.Compare with the TbFe magnetostrictive thin film, { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50The coercive force of multilayer film horizontal direction is reduced to 396Oe from 740Oe.
Fig. 4 is for preparing attitude, 250 ℃ * 60min and 350 ℃ * 60min annealed state { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50The multilayer film magnetic hysteresis loop, as can be seen, annealing in process obviously improves the magnetic susceptibility of TbFe/NdFeB multilayer film, and saturation magnetic field intensity obviously reduces; The saturation magnetization M of back TbFe/NdFeB multilayer film is handled in vacuum annealing
sBe further enhanced, 250 ℃ * 60min reaches maximum, the saturation magnetization M of TbFe/NdFeB multilayer film after the 350 ℃ * 60min vacuum annealing
sReduction is arranged slightly, but be higher than the saturation magnetization M of preparation attitude TbFe/NdFeB multilayer film
s{ (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50The coercive force of multilayer film horizontal direction from 396Oe be reduced to 276Oe (250 ℃ * 60min) and 232Oe (350 ℃ * 60min).Saturation magnetic field intensity by 1450Oe (preparation attitude) be reduced to 874Oe (250 ℃ * 60min) and 544Oe (350 ℃ * 60min).
The magnetostriction coefficient of film is measured by the cantilever beam method.Fig. 5 is 250 ℃ * 60min, and 350 ℃ * 60min anneals { (FeAl)
8nm/ (TbFe
2)
10nm/ (NdFeB)
8nm}
50Multilayer film magnetostriction curve chart as seen from the figure, has maximum saturation magnetostriction coefficient lambda through the TbFe/NdFeB of 250 ℃ of annealing in process multilayer film
s(reaching 581ppm) is than the λ of preparation attitude
s(223ppm) 2.6 times have been improved.During externally-applied magnetic field 300Oe, have a low preferably magnetostriction performance through the TbFe/NdFeB magnetostriction multilayer film of 350 ℃ * 60min annealing in process, magnetostriction coefficient reaches 153ppm.
Referring to Fig. 1, a kind of huge magnetostriction nano multilayered membrane that is used for making micro motor, this nano-multilayer film is a magnetron sputtering giant magnetostrictive driver performance multi-layer membrane material on monocrystalline silicon surface, described monocrystalline silicon has (100) orientation, and described nano-multilayer film comprises monocrystalline silicon substrate, FeAl soft magnetic film layer, TbFe
2Magnetostrictive thin film layer and NdFeB amorphous magnetic layer, this huge magnetostriction shrinking structure { (FeAl)
x/ (TbFe
2)
y/ (NdFeB)
z}
n(film thickness x=5nm, y=8nm, z=5nm, the total number of plies n=20 of film).
The preparation method of above-mentioned huge magnetostriction nano multilayered membrane may further comprise the steps:
(1) distance of adjustment target platform and substrate turntable is 100mm; FeAl, TbFe are installed
2, the NdFeB target is on target platform separately;
(2) monocrystalline silicon (100) substrate is boiled with the concentrated sulfuric acid after, use the acetone ultrasonic waves for cleaning, in hydrofluoric acid solution, soak 30min then, use deionized water and acetone successively after the ultrasonic cleaning again, monocrystalline silicon (100) substrate is placed on the filter paper dries, be installed on the substrate turntable;
(3) vacuumize, make sputtering chamber vacuum degree be lower than 1.4 * 10
-4Pa;
(4) high-purity argon gas is introduced sputtering chamber, reach required partial pressure of ar gas value 0.2Pa;
(5) each target is carried out pre-sputter 1min, sputtering power 20W;
(6) monocrystalline silicon substrate is carried out reverse sputtering 5min, sputtering power 100W;
(7), successively open the target power supply of required separately sputtering sedimentation target, adjust the substrate turntable, and press FeAl, TbFe
2, NdFeB carries out the sputtering sedimentation target, its each layer sedimentary condition in proper order:
FeAl layer: sputtering power 50W, Sputtering Ar Pressure 0.2Pa, thin film sputtering speed 0.1nm/s;
TbFe
2Layer: sputtering power 40W Sputtering Ar Pressure 0.2Pa, thin film sputtering speed 0.1nm/s;
The NdFeB layer: sputtering power 80W, Sputtering Ar Pressure 0.2Pa, thin film sputtering speed 0.1nm/s;
(8) utilize the multi-target magnetic control sputtering technology on substrate, alternately to deposit FeAl/TbFe
2/ NdFeB/TbFe
2/ FeAl/TbFe
2/ NdFeB, the monocrystalline silicon substrate temperature is chosen as 100 ℃, and sputtering sedimentation is finished, and takes out the monocrystalline silicon substrate that sputter has nano-multilayer film;
(9) sputter there is the monocrystalline silicon substrate of nano-multilayer film put into vacuum annealing furnace and heat-treats its Technology for Heating Processing:
Annealing temperature: 200 ℃, 1 ℃/s of programming rate cools off with stove;
Annealing time: 30minmin;
Vacuum degree: be lower than 5 * 10
-4
Referring to Fig. 1, a kind of huge magnetostriction nano multilayered membrane that is used for making fluid control systems, this nano-multilayer film is a magnetron sputtering giant magnetostrictive driver performance multi-layer membrane material on monocrystalline silicon surface, described monocrystalline silicon has (100) orientation, and described nano-multilayer film comprises monocrystalline silicon substrate, FeAl soft magnetic film layer, TbFe
2Magnetostrictive thin film layer and NdFeB amorphous magnetic layer, this huge magnetostriction shrinking structure { (FeAl)
x/ (TbFe
2)
y/ (NdFeB)
z}
n(film thickness x=8nm, y=12nm, z=8nm, the total number of plies n=100 of film).
The preparation method of above-mentioned huge magnetostriction nano multilayered membrane may further comprise the steps:
(1) distance of adjustment target platform and substrate turntable is 200mm; FeAl, TbFe are installed
2, the NdFeB target is on target platform separately;
(2) monocrystalline silicon (100) substrate is boiled with the concentrated sulfuric acid after, use the acetone ultrasonic waves for cleaning, in hydrofluoric acid solution, soak 30min then, use deionized water and acetone successively after the ultrasonic cleaning again, monocrystalline silicon (100) substrate is placed on the filter paper dries, be installed on the substrate turntable;
(3) vacuumize, make sputtering chamber vacuum degree reach 1.4 * 10
-4Pa;
(4) high-purity argon gas is introduced sputtering chamber, reach required partial pressure of ar gas value 1.2Pa;
(5) each target is carried out pre-sputter 10min, sputtering power 150W;
(6) monocrystalline silicon substrate is carried out reverse sputtering 15min, sputtering power 150W;
(7) open the target power supply of required separately sputtering sedimentation target successively, adjust the substrate turntable, and carry out the sputtering sedimentation target in proper order, its each layer sedimentary condition by FeAl, TbFe2, NdFeB:
FeAl layer: sputtering power 100W, Sputtering Ar Pressure 0.6Pa, thin film sputtering speed 0.2nm/s;
TbFe
2Layer: sputtering power 100W Sputtering Ar Pressure 0.6Pa, thin film sputtering speed 0.2nm/s;
NdFeB layer: sputtering power 150W, Sputtering Ar Pressure 0.6Pa, thin film sputtering speed 0.2nm/s;
(8) utilize the multi-target magnetic control sputtering technology on substrate, alternately to deposit FeAl/TbFe
2/ NdFeB/TbFe
2/ FeAl/TbFe
2/ NdFeB, the monocrystalline silicon substrate temperature is chosen as 300 ℃, and sputtering sedimentation is finished, and takes out the monocrystalline silicon substrate that sputter has nano-multilayer film;
(9) sputter there is the monocrystalline silicon substrate of nano-multilayer film put into vacuum annealing furnace and heat-treats its Technology for Heating Processing:
Annealing temperature: 600 ℃, 1 ℃/s of programming rate cools off with stove;
Annealing time: 120min;
Vacuum degree: 4 * 10
-4
Claims (10)
1. huge magnetostriction nano multilayered membrane, this nano-multilayer film is a magnetron sputtering giant magnetostrictive driver performance multi-layer membrane material on monocrystalline silicon surface, it is characterized in that described nano-multilayer film comprises FeAl, TbFe
2With the NdFeB material layer, described monocrystalline silicon has (100) orientation.
2. a kind of huge magnetostriction nano multilayered membrane according to claim 1 is characterized in that, described FeAl, TbFe
2Sputtering sedimentation thickness with the NdFeB material layer: FeAl is that 5～8nm, TbFe are that 8～12nm, NdFeB are 5～8nm.
3. a kind of huge magnetostriction nano multilayered membrane according to claim 1 is characterized in that, the total number of plies of described multilayer film is 20～100 layers.
4. the preparation method of a huge magnetostriction nano multilayered membrane as claimed in claim 1 is characterized in that, this method comprises the following steps:
(1) distance of adjustment target platform and substrate turntable is 100mm～200mm; FeAl, TbFe are installed
2, the NdFeB target is on target platform separately;
(2) monocrystalline silicon (100) substrate is boiled with the concentrated sulfuric acid after, use the acetone ultrasonic waves for cleaning, in hydrofluoric acid solution, soak 30min then, use deionized water and acetone successively after the ultrasonic cleaning again, monocrystalline silicon (100) substrate is placed on the filter paper dries, be installed on the substrate turntable;
(3) vacuumize;
(4) high-purity argon gas is introduced sputtering chamber, make the partial pressure value of argon gas reach 0.2～1.2Pa;
(5) each target is carried out pre-sputter 1～10min;
(6) monocrystalline silicon substrate is carried out reverse sputtering 5～15min;
(7) open the target power supply of required separately sputtering sedimentation target successively, adjust the substrate turntable, and press FeAl, TbFe
2, NdFeB carries out the sputtering sedimentation target in proper order;
(8) utilize the multi-target magnetic control sputtering technology on monocrystalline silicon substrate, alternately to deposit FeAl/TbFe
2/ NdFeB/TbFe
2/ FeAl/TbFe
2/ NdFeB, the monocrystalline silicon substrate temperature is 100 ℃～300 ℃, sputtering sedimentation is finished, and takes out the monocrystalline silicon substrate that sputter has nano-multilayer film;
(9) sputter there is the monocrystalline silicon substrate of nano-multilayer film put into vacuum annealing furnace and heat-treats, promptly get product with the stove cooling then.
5. the preparation method of a kind of huge magnetostriction nano multilayered membrane according to claim 4 is characterized in that, vacuumizing in the described step (3) makes sputtering chamber vacuum degree be lower than 1.4 * 10
-4Pa.
6. a kind of huge magnetostriction nano multilayered membrane according to claim 4 and preparation method thereof is characterized in that, the power of the sputter in the described step (5) is 20～150W.
7. the preparation method of a kind of huge magnetostriction nano multilayered membrane according to claim 4 is characterized in that, the power of the sputter in the described step (6) is 100～150W.
8. the preparation method of a kind of huge magnetostriction nano multilayered membrane according to claim 4, it is characterized in that, each layer sedimentary condition is in the described step (7): the FeAl layer: sputtering power 50～100W, Sputtering Ar Pressure 0.2～0.6Pa, thin film sputtering speed 0.1～0.2nm/s, thin film deposition thickness 5～8nm; TbFe
2Layer: sputtering power 40～100W Sputtering Ar Pressure 0.2～0.6Pa, thin film sputtering speed 0.1～0.2nm/s, thin film deposition thickness 8～12nm; NdFeB layer: sputtering power 80～150W, Sputtering Ar Pressure 0.2～0.6Pa, thin film sputtering speed 0.1～0.2nm/s, thin film deposition thickness 5～8nm; It is 20～100 layers that described sputter has the total number of plies of multilayer film of the monocrystalline silicon substrate of nano-multilayer film.
9. the preparation method of a kind of huge magnetostriction nano multilayered membrane according to claim 4, it is characterized in that, the annealing temperature of the Technology for Heating Processing of described step (9) is: 200 ℃～600 ℃, programming rate is 1 ℃/s, annealing time: 30min～120min; Vacuum degree: be lower than 5 * 10
-4
10. the application of a huge magnetostriction nano multilayered membrane as claimed in claim 1 is characterized in that, described nano-multilayer film is applied to make precision positioning device, micro motor or fluid control systems.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100475759A CN101425357B (en) | 2007-10-30 | 2007-10-30 | Huge magnetostriction nano multilayered membrane, preparation and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100475759A CN101425357B (en) | 2007-10-30 | 2007-10-30 | Huge magnetostriction nano multilayered membrane, preparation and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101425357A true CN101425357A (en) | 2009-05-06 |
| CN101425357B CN101425357B (en) | 2011-05-11 |
Family
ID=40615896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100475759A Expired - Fee Related CN101425357B (en) | 2007-10-30 | 2007-10-30 | Huge magnetostriction nano multilayered membrane, preparation and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101425357B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110221630A (en) * | 2019-06-04 | 2019-09-10 | 吴江南玻华东工程玻璃有限公司 | A kind of building glass filming parameter adaptive control system |
-
2007
- 2007-10-30 CN CN2007100475759A patent/CN101425357B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110221630A (en) * | 2019-06-04 | 2019-09-10 | 吴江南玻华东工程玻璃有限公司 | A kind of building glass filming parameter adaptive control system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101425357B (en) | 2011-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102867645B (en) | Method for improving thermostability of anisotropic magnetoresistance permalloy film | |
| CN110021702A (en) | A kind of method of quick raising perpendicular magnetic anisotropic | |
| CN108385166A (en) | Regulate and control the method for ferrite single crystal thin film magnetic using bending stress | |
| CN105514266A (en) | Rare earth doped Sb-based phase thinned film material and film preparation method | |
| CN101996775B (en) | Method for preparing solid-state ultracapacitor | |
| CN110635023A (en) | Magnetoelectric sensor and preparation method thereof | |
| CN101425357B (en) | Huge magnetostriction nano multilayered membrane, preparation and application | |
| CN112968058B (en) | Ion-regulated spin wave transistor and preparation method thereof | |
| CN105274483A (en) | Preparation method of negative thermal expansion material Sc2W3O12 thin film | |
| CN103628004B (en) | A kind of method adopting low-temperature annealing to prepare amorphous NiW alloy firm | |
| Zate et al. | Textured Ceramics for Multilayered Actuator Applications: Challenges, Trends, and Perspectives | |
| CN115537738A (en) | Preparation method of M-type ferrite heterojunction film with high remanence ratio and single orientation | |
| CN100560783C (en) | The preparation method of permalloy iron core film | |
| CN104733179A (en) | Preparation method for ferrite baseplate (FePt) permanent magnet film | |
| Yang et al. | Structural and ferroelectric properties of textured KNN thick films prepared by sol-gel methods | |
| CN101599340A (en) | Direct magnetic coupling preparation method of magneto strictive multiplayer film | |
| CN103872243A (en) | Method for manufacturing magnetic tunnel junction based on magnesium oxide target | |
| CN105112870B (en) | A kind of ferroelectricity vanadium oxide composite film and preparation method thereof | |
| CN112962060A (en) | Cr (chromium)3Al/Zr multilayer film and preparation method thereof | |
| CN104064350B (en) | A kind of preparation method of the thin magnetic film with positive magnetic anisotropy temperature coefficient | |
| CN111243816A (en) | Magnetized material, preparation method, perpendicular magnetized film structure and electron spin device | |
| CN108531873A (en) | One kind is in SrTiO3High quality Fe is prepared on substrate81Ga19The method of film | |
| Kim et al. | Strong (110) Texturing and Heteroepitaxial Growth of Thin Mo Films on MoS2 Monolayer | |
| CN109234678A (en) | A kind of Copper-cladding Aluminum Bar barium titanate/nickel-zinc ferrite complex phase thin-film material and preparation method | |
| CN104513963A (en) | Method for preparing ferromanganese film on silicon through magnetron sputtering |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110511 Termination date: 20131030 |