CN101423219B - Polycrystalline silicon purification or silicon liquid leakage defense device of ingot furnace - Google Patents
Polycrystalline silicon purification or silicon liquid leakage defense device of ingot furnace Download PDFInfo
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- CN101423219B CN101423219B CN2008102028190A CN200810202819A CN101423219B CN 101423219 B CN101423219 B CN 101423219B CN 2008102028190 A CN2008102028190 A CN 2008102028190A CN 200810202819 A CN200810202819 A CN 200810202819A CN 101423219 B CN101423219 B CN 101423219B
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- diversion trench
- liquid leakage
- ingot furnace
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Abstract
The invention provides a silicon liquid leakage protection device used for a polysilicon purification or ingot furnace, comprising a crucible and a platform; the crucible is arranged on the upper surface of the platform; the silicon liquid leakage protection device is characterized in that the device also comprises a chamfer and a coagulating basin; the upper surface of the platform is provided with a plurality of radial diversion troughs and a plurality of axial diversion troughs; the chamfer is arranged at the periphery of the bottom of the platform; the coagulating basin is arranged on thelower surface of the platform and surrounds the platform by one cycle; the internal circumference of the coagulating basin is arranged inside the chamfer and the external circumference thereof extends to the external surface of the platform; when the silicon liquid leakage protection device used for the polysilicon purification or ingot furnace is adopted, the leaked silicon liquid can completelyflow into the coagulating basin by the diversion trough on the platform no matter where the leakage occurs on the crucible, thus preventing the occurrence of equipment damage and explosion and protecting the safety of operators in front of the furnace.
Description
Technical field
The invention belongs to polysilicon and purify or the ingot casting field, the silicon liquid leakage defense device of particularly a kind of polysilicon purification or ingot furnace.
Background technology
At vacuum melting purifying solar energy polysilicon or when carrying out polycrystalline silicon ingot casting, because a variety of causes, the crucible of carrying silicon material can break unavoidably, and causes silicon liquid to leak, and silicon liquid is in case leak, can damage the mechanism's (normally graphite) and the body of heater of support crucible, serious, can cause furnace bottom by burn through, and the water coolant of furnace wall and high temperature silicon liquid are come in contact, and cause exploding, even personal injury.
Silicon liquid leaks and to be caused as crucible itself invisible defect being arranged by multiple reason, and silicon liquid and crucible or its top coat generation chemical reaction cause crucible to corrode, and expansion caused crucible to rise splitting when silicon liquid solidified, or the like.Although take all handling, in polycrystalline silicon ingot casting and purification, silicon liquid leaks and still is difficult to avoid.
Summary of the invention
Main purpose of the present invention is in order to address the above problem; the silicon liquid leakage defense device of a kind of polysilicon purification or ingot furnace is provided; when silicon liquid contingency takes place to leak; this device can be protected the equipment in body of heater and the stove; prevent the generation of structure deteriorate and blast, protection flushing and casting workman's personnel safety.
In order to achieve the above object, technical scheme provided by the invention is: the silicon liquid leakage defense device of a kind of polysilicon purification or ingot furnace comprises crucible, platform, graphite support and stainless steel platform; Graphite props up and is set up in above the stainless steel platform; Platform is located at above the graphite support; Crucible is located at above the platform, also comprises chamfering and coagulating pan, and the platform upper surface has at least 1 radially diversion trench and at least 1 broadwise diversion trench; Chamfering is located at the periphery of platform bottom; Coagulating pan is located at the following of platform and around one week of platform; The inside of being located at chamfering interior week of coagulating pan, periphery extends to the outside of platform.
The thickness of platform is at least 50mm.
Radially diversion trench prolongs radially outward from the center of platform and disperses; The broadwise diversion trench is around the center of platform, and is similar to the peripheral shape of platform; Radially diversion trench and described broadwise diversion trench intersect netted.
Radially the degree of depth of diversion trench and broadwise diversion trench and width are 5mm～40mm; Radially therefrom mind-set is more and more darker outward for diversion trench; It is identical with the degree of depth of its radially diversion trench that intersects that the degree of depth of broadwise diversion trench is followed.
Broadwise diversion trench in outmost turns is opened at least one flow-guiding mouth.
Silicon liquid transmitter is equipped with in the bottom of flow-guiding mouth, and this silicon liquid transmitter is linear transmitter.
The thickness of coagulating pan exceeds with the weight that can carry whole silicon liquid in the crucible; The capacity of coagulating pan exceeds can load silicon liquid whole in the crucible.
Coagulating pan is made up of high-temperature refractory, and this high-temperature refractory is the combination of high alumina, carbon fibre or above-mentioned materials.
Platform is made up of high-temperature refractory, and this refractory materials is the combination of graphite, quartz, miramint or above-mentioned materials.
Positively effect of the present invention is as follows: because platform is provided with diversion trench, be provided with chamfering and coagulating pan below the platform, no matter crucible leaks from any orientation, and the silicon liquid of leakage all can flow in the coagulating pan by the diversion trench on the platform, so thoroughly avoided the generation of various hazardous conditions.
Description of drawings
Fig. 1: structural representation of the present invention;
Fig. 2: platform vertical view of the present invention.
Embodiment
As shown in Figure 1, the silicon liquid leakage defense device of a kind of polysilicon purification or ingot furnace comprises crucible 1, platform 2, graphite support 8 and stainless steel platform 9, and graphite support 8 is located at above the stainless steel platform 9; Platform 2 is located at above the graphite support 8; Crucible 1 is located at above the platform 2, and the thickness of platform is at least 50mm, also comprises chamfering 6 and coagulating pan 7, has at least 1 radially diversion trench 3 and at least 1 broadwise diversion trench 4 at platform 2 upper surfaces, and radially diversion trench 3 prolongs radially outward from the center of platform 2 and disperses; Broadwise diversion trench 4 is around the center of platform 2, and is similar to the peripheral shape of platform 2; Radially diversion trench 3 and broadwise diversion trench 4 intersect netted; Radially the degree of depth of diversion trench 3 and broadwise diversion trench 4 and width are 5mm～40mm, and radially therefrom mind-set is more and more darker outward for diversion trench 3, and it is identical with the degree of depth of its radially diversion trench 3 that intersects that the degree of depth of broadwise diversion trench 4 is followed; Open at least one flow-guiding mouth 5 at the broadwise diversion trench 4 of outmost turns, the silicon liquid that flows on the platform 2 from crucible 1 is flowed away by flow-guiding mouth 5, in the bottom of flow-guiding mouth 5 silicon liquid transmitter 10 is installed, this silicon liquid transmitter 10 is linear transmitter, flow down when running into this silicon liquid transmitter 10 at silicon liquid, promptly provide a switch signal, when silicon liquid did not leak, this transmitter 10 provided a reverse switch signal.
Periphery in platform 2 bottoms is provided with chamfering 6, to prevent that silicon liquid from flowing to platform 2 bottom surfaces, one coagulating pan 7 is installed below platform 2, coagulating pan 7 is around 2 one weeks of platform, and interior week is located at the inside of chamfering 6, and periphery extends to the outside of platform 2, and no matter silicon liquid flows out from any orientation, all can flow directly in the coagulating pan 7, the silicon liquid that drips from chamfering 6 also can fall in the coagulating pan 7; The thickness of coagulating pan 7 exceeds with the weight that can carry whole silicon liquid in the crucible 1, and whole silicon liquid exceeds the capacity of coagulating pan 7 in the crucible 1 loading; Coagulating pan 7 is made up of high-temperature refractory, and this high-temperature refractory is the combination of high alumina, carbon fibre or above-mentioned materials, and the speed of response of this material and silicon is slower, can carry out passivation, makes platform 2 surfaces more and more be difficult for reacting with silicon; Platform 2 is made up of refractory materials, and this refractory materials is the combination of graphite, quartz, miramint or above-mentioned materials, and these materials should be able to be high temperature resistant, and do not contain the volatile additive of high temperature.
Claims (9)
1. a polysilicon is purified or the silicon liquid leakage defense device of ingot furnace, comprises crucible, platform, graphite support and stainless steel platform; Graphite props up and is set up in above the stainless steel platform; Platform is located at above the graphite support; Crucible is located at above the platform, it is characterized in that: also comprise chamfering and coagulating pan; Described platform upper surface has at least 1 radially diversion trench and at least 1 broadwise diversion trench; Described chamfering is located at the periphery of platform bottom; Described coagulating pan is located at the following of platform and around one week of platform; The inside of being located at chamfering interior week of described coagulating pan, periphery extends to the outside of platform.
2. the silicon liquid leakage defense device of polysilicon purification according to claim 1 or ingot furnace, it is characterized in that: the thickness of described platform is at least 50mm.
3. the silicon liquid leakage defense device of polysilicon purification according to claim 1 or ingot furnace, it is characterized in that: described radially diversion trench is radially outwards dispersed from the center of platform; Described broadwise diversion trench is around the center of platform, and is similar to the peripheral shape of platform; Described radially diversion trench and described broadwise diversion trench intersect netted.
4. according to the silicon liquid leakage defense device of claim 1 or 3 described polysilicons purifications or ingot furnace, it is characterized in that: the degree of depth of described radially diversion trench and broadwise diversion trench and width are 5mm～40mm; Therefrom mind-set is more and more darker outward for described radially diversion trench, and it is identical with the degree of depth of its radially diversion trench that intersects that the degree of depth of described broadwise diversion trench is followed.
5. according to the silicon liquid leakage defense device of claim 1 or 3 described polysilicons purifications or ingot furnace, it is characterized in that: the broadwise diversion trench in outmost turns is opened at least one flow-guiding mouth.
6. the silicon liquid leakage defense device of polysilicon purification according to claim 5 or ingot furnace, it is characterized in that: silicon liquid transmitter is equipped with in the bottom of described flow-guiding mouth; This silicon liquid transmitter is linear transmitter.
7. the silicon liquid leakage defense device of polysilicon purification according to claim 1 or ingot furnace, it is characterized in that: the thickness of described coagulating pan exceeds with the weight that can carry whole silicon liquid in the crucible, and the capacity of described coagulating pan exceeds can load silicon liquid whole in the crucible.
8. the silicon liquid leakage defense device of polysilicon purification according to claim 1 or ingot furnace, it is characterized in that: described coagulating pan is made up of high-temperature refractory, and this high-temperature refractory is the combination of high alumina, carbon fibre or above-mentioned materials.
9. the silicon liquid leakage defense device of polysilicon purification according to claim 1 or ingot furnace, it is characterized in that: described platform is made up of refractory materials, and this refractory materials is the combination of graphite, quartz, miramint or above-mentioned materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102028190A CN101423219B (en) | 2008-11-17 | 2008-11-17 | Polycrystalline silicon purification or silicon liquid leakage defense device of ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102028190A CN101423219B (en) | 2008-11-17 | 2008-11-17 | Polycrystalline silicon purification or silicon liquid leakage defense device of ingot furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101423219A CN101423219A (en) | 2009-05-06 |
| CN101423219B true CN101423219B (en) | 2010-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102028190A Expired - Fee Related CN101423219B (en) | 2008-11-17 | 2008-11-17 | Polycrystalline silicon purification or silicon liquid leakage defense device of ingot furnace |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101592440B (en) * | 2009-07-17 | 2011-03-16 | 龙岩市龙创硅业有限公司 | Leak-proof protection device of vacuum furnace and formula and preparation process thereof |
| JP5630301B2 (en) * | 2011-02-07 | 2014-11-26 | 信越半導体株式会社 | Single crystal manufacturing apparatus and single crystal manufacturing method |
| CN102383183B (en) * | 2011-11-04 | 2013-12-04 | 湖南顶立科技有限公司 | Crystalline silicon ingot casting furnace |
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2008
- 2008-11-17 CN CN2008102028190A patent/CN101423219B/en not_active Expired - Fee Related
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| CN101423219A (en) | 2009-05-06 |
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Assignee: Jiangsu strong Photovoltaic Technology Co., Ltd. Assignor: Shanghai Pro Entergy Technology Co., Ltd. Contract record no.: 2012320000363 Denomination of invention: Polycrystalline silicon purification or silicon liquid leakage defense device of ingot furnace Granted publication date: 20101208 License type: Exclusive License Open date: 20090506 Record date: 20120330 |
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101208 Termination date: 20131117 |