CN101420177A - Power source converter improving synchronous rectifying loop breakdown - Google Patents
Power source converter improving synchronous rectifying loop breakdown Download PDFInfo
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- CN101420177A CN101420177A CNA2007101670301A CN200710167030A CN101420177A CN 101420177 A CN101420177 A CN 101420177A CN A2007101670301 A CNA2007101670301 A CN A2007101670301A CN 200710167030 A CN200710167030 A CN 200710167030A CN 101420177 A CN101420177 A CN 101420177A
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Abstract
The invention provides a power converter used for improving synchronous rectifier circuit breakdown and converting an input voltage into an output voltage; the power converter comprises a power circuit, a comparison circuit and a modulation circuit; wherein, the power circuit comprises a high-stand driving circuit, a low-stand driving circuit, a first transistor, a second transistor, a first resistance, a first diode, a power supply circuit and a second resistance; one end of the first resistance is coupled to the grid of a second transistor and the other end thereof is coupled to the low-stand driving circuit; furthermore, the first diode is connected in parallel with the first resistance; the anode of the first diode is coupled to the grid of the second transistor and the cathode thereof is connected with the low-stand driving circuit. In the invention, the power converter leads the first resistance to be connected in parallel with the first diode, thus reducing the effects of the first resistance on the self-adapting threshold driving circuit, thereby reducing the breakdown possibility.
Description
Technical field
The invention relates to a kind of DC-DC power supply changeover device, and particularly relevant for the synchronous rectifying loop in a kind of DC-DC power supply changeover device.
Background technology
In recent years, because integrated circuit (IC) is constantly progressive, make that the application of electronic product is increasingly extensive, demand increases day by day, the circuit design of various electronic products becomes increasingly complex, and the design of many circuit is cell voltage to be converted to lower supply power voltage, as mobile phone, the handheld device that PDA(Personal Digital Assistant) etc. are battery-powered, hand-held computer and for example, and step-down controller (buck converter) is to be used in the general power supply unit as a basic voltage regulator, and therefore increasing DC/DC (DC-to-DC) transducer is used in the various electronic products.
The effect of DC/DC transducer is the effect that voltage transitions is become required voltage and play voltage stabilizing.In server; DC/DC power source conversion circuit normally adopts the synchronous rectification feedback line; this technology adopts a control field effect transistor (Control MOSFET) and a synchronous field effect transistor (Synchronous MOSFET) to replace original passive fly-wheel diode (Flywheel Diode) to reduce conduction loss; but; produced a problem simultaneously; the transistor of high-order exactly voltage zone and low level voltage zone is easy to take place punch-through; usually can be at controller the inside design Dead Time (dead time) control circuit (generally including fixedly Dead Time and adaptive dead zone time) to guarantee the not conducting simultaneously of two field effect transistor; but this is not absolute, still such phenomenon can occur in some cases.Design at common normal circuit sometimes can be strengthened such phenomenon, and extremely difficult measurement of this phenomenon and assurance.
See also Fig. 1, it is known a kind of DC/DC transducer, and this DC/DC transducer comprises comparison circuit 101, modulation circuit 103, power circuit 105, voltage stabilizing circuit 107 and feedback circuit 109.Power circuit 105 comprises the high bit driver circuit 111 that is used to produce high-order drive signal, the low bit driver circuit 113 that is used to produce the low level drive signal, transistor 115, transistor 117 and power-supply circuit 119, high bit driver circuit 111 is coupled to transistor 115, and low bit driver circuit is coupled to transistor 117.
When the DC/DC transducer is worked, DC input voitage is inputed to the DC/DC transducer, this input voltage is provided by alkaline battery or lithium battery or DC power supply device, and convert lower fixedly VD to, this output voltage compares with reference voltage after the feedback circuit feedback, to produce control signal to modulation circuit 103, and then the operating state of transistor 115 and transistor 117 in the power controlling circuit 105, when output voltage during greater than reference voltage, comparison circuit 101 sends a control signal to modulation circuit 103, modulation circuit 103 ends by the high-order drive signal oxide-semiconductor control transistors 115 of high bit driver circuit 111 generations of power controlling circuit 105, the low bit driver circuit 113 of control produces 117 conductings of low level drive signal oxide-semiconductor control transistors, make output voltage ground connection, reduce output voltage; When output voltage during less than reference voltage, comparison circuit 101 sends a control signal to modulation circuit 103, modulation circuit 103 produces high-order drive signal oxide-semiconductor control transistors 115 conductings by the high bit driver circuit 111 of power controlling circuit 105, the low bit driver circuit 113 of control produces low level drive signal oxide-semiconductor control transistors 117 to be ended, input voltage is connected with output voltage, and makes output voltage export fixedly VD through voltage stabilizing circuit 107 backs.
Usually in order to contain the warning of thresholding, can add damping resistance (damping resistance) 121 in the design usually, referring to Fig. 1, an end of damping resistance 121 is coupled to low bit driver circuit 113, and the other end is coupled to the grid of transistor 117.Can make it like this to be together in series with the pull down resistor of low bit driver circuit 113, thus self-adaptive driving circuit when determining the dead time of high-order voltage zone, the gate voltage of being assert is lower than actual, so easier generation punch-through.
In order to address the above problem, the patent No. is the disclosed technology of I253802 patent of invention, with reference to Fig. 2, utilize a switch Q3 who switches fast to come control capacitance Cadd, to cause switch Q1 ' and Q3 under the situation of conducting, control capacitance Cadd and parasitic capacitance Cgs2 ' is parallel with one another, and then reduction runs through (shoot through) voltage by this.
Adopt above-mentioned technology, reduce the contribution of the parasitic capacitance Cgs2 ' of switch Q2 ' by electric capacity to punch-through effect, but above-mentioned switch Q3, because of itself being a field effect transistor, conducting and the state variation of ending have certain time of delay, still can not accelerate the time that switch Q1 ' and switch Q2 ' state change, still there is not Close All and switch Q2 ' is opened or switch Q2 ' not Close All and the opened situation of switch Q1 ' of switch Q1 ', in this case, punch-through still exists, cause reduce the useful life of power supply changeover device, in this kind power supply changeover device puts into effect, can be because of few production cost that improves in its useful life.
Summary of the invention
The invention provides a kind of power supply changeover device that improves synchronous rectifying loop breakdown, cause its useful life short to solve the punch-through of bringing in the prior art, the shortcoming that production cost is high.
The present invention proposes a kind of power supply changeover device that improves synchronous rectifying loop breakdown, in order to an input voltage is converted to an output voltage, this power supply changeover device comprises power circuit, comparison circuit and modulation circuit, and wherein power circuit comprises: in order to the high bit driver circuit that produces high-order drive signal, the low bit driver circuit that is coupled to high bit driver circuit, the first transistor, transistor seconds, first resistance and first diode.Low bit driver circuit is in order to generation low level drive signal, and the work period of high-order drive signal and low level drive signal does not overlap mutually.The first transistor has first source/drain electrode, second source/drain electrode and the grid, first source/drain electrode is coupled to aforementioned input voltage, and second source/drain electrode is coupled to one and treats voltage of voltage regulation, and grid is coupled to high bit driver circuit, wherein, this treats that voltage of voltage regulation is aforementioned output voltage after voltage stabilizing.Transistor seconds has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to second source/drain electrode of the first transistor, and second source/drain electrode is coupled to an earthed voltage.First resistance, one end is coupled to the grid of transistor seconds, and its other end is coupled to low bit driver circuit.First diode has positive pole and negative pole, and positive pole is coupled to the grid of transistor seconds, and negative pole is coupled to low bit driver circuit.Comparison circuit is that wherein, this feedback voltage and aforementioned output voltage have a predetermined relationship in order to comparison one feedback voltage and a reference voltage.Modulation circuit is coupled to comparison circuit and power circuit, the comparative result that modulation circuit is exported according to comparison circuit, power controlling circuit behind modulation, and make high bit driver circuit and low bit driver circuit produce high-order drive signal and low level drive signal separately.
According to the described power supply changeover device that improves synchronous rectifying loop breakdown of one embodiment of the invention, wherein the aforementioned power circuit also comprises the power-supply circuit and second resistance.This power-supply circuit has first end and second end, first end is coupled to second source/drain electrode of the first transistor, power-supply circuit provides one to import voltage to its first end, and second resistance, one end is coupled to high bit driver circuit, and its other end is coupled to second end of power-supply circuit.
According to the described power supply changeover device that improves synchronous rectifying loop breakdown of another embodiment of the present invention, wherein the aforementioned power circuit also includes the 3rd resistance, and it is arranged between the grid of high bit driver circuit and the first transistor.
According to the described power supply changeover device that improves synchronous rectifying loop breakdown of embodiments of the invention, above-mentioned power supply changeover device can also comprise voltage stabilizing circuit and feedback circuit.Voltage stabilizing circuit is coupled to second source/drain electrode of the first transistor, is output voltage in order to will treat the voltage of voltage regulation voltage stabilizing.Feedback circuit is arranged between voltage stabilizing circuit and the comparison circuit, is used for output voltage is converted to feedback voltage.
The present invention proposes a kind of power supply changeover device that improves synchronous rectifying loop breakdown in addition, in order to an input voltage is converted to an output voltage, this power supply changeover device comprises power circuit, comparison circuit and modulation circuit, and wherein power circuit comprises: in order to the high bit driver circuit that produces high-order drive signal, low bit driver circuit, the first transistor, transistor seconds, power-supply circuit and the resistance that is coupled to high bit driver circuit.Low bit driver circuit is in order to generation low level drive signal, and the work period of high-order drive signal and low level drive signal does not overlap mutually.The first transistor has first source/drain electrode, second source/drain electrode and the grid, first source/drain electrode is coupled to aforementioned input voltage, and second source/drain electrode is coupled to one and treats voltage of voltage regulation, and grid is coupled to high bit driver circuit, wherein, this treats that voltage of voltage regulation is aforementioned output voltage after voltage stabilizing.Transistor seconds has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to second source/drain electrode of the first transistor, and second source/drain electrode is coupled to an earthed voltage, and grid is coupled to low bit driver circuit.Power-supply circuit has first end and second end, and first end is coupled to second source/drain electrode of the first transistor, and power-supply circuit provides one to import voltage to its first end.And an end of aforementioned resistance is coupled to high bit driver circuit, and the other end of this resistance is coupled to second end of power-supply circuit.Comparison circuit is that wherein, this feedback voltage and aforementioned output voltage have a predetermined relationship in order to comparison one feedback voltage and a reference voltage.Modulation circuit is coupled to comparison circuit and power circuit, the comparative result that modulation circuit is exported according to comparison circuit, power controlling circuit behind modulation, and make high bit driver circuit and low bit driver circuit produce high-order drive signal and low level drive signal separately.
The present invention proposes a kind of power supply changeover device that improves synchronous rectifying loop breakdown again, in order to an input voltage is converted to an output voltage, this power supply changeover device comprises power circuit, comparison circuit and modulation circuit, and wherein power circuit comprises: in order to the high bit driver circuit that produces high-order drive signal, low bit driver circuit, the first transistor, transistor seconds and the resistance that is coupled to high bit driver circuit.Low bit driver circuit is in order to generation low level drive signal, and the work period of high-order drive signal and low level drive signal does not overlap mutually.The first transistor has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to aforementioned input voltage, and second source/drain electrode is coupled to one and treats voltage of voltage regulation, and wherein, this treats that voltage of voltage regulation is aforementioned output voltage after voltage stabilizing.Transistor seconds has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to second source/drain electrode of the first transistor, and second source/drain electrode is coupled to an earthed voltage, and grid is coupled to low bit driver circuit.And an end of aforementioned resistance is coupled to the grid of the first transistor, and the other end of this resistance is coupled to high bit driver circuit.Comparison circuit is that wherein, this feedback voltage and aforementioned output voltage have a predetermined relationship in order to comparison one feedback voltage and a reference voltage.Modulation circuit is coupled to comparison circuit and power circuit, the comparative result that modulation circuit is exported according to comparison circuit, power controlling circuit behind modulation, and make high bit driver circuit and low bit driver circuit produce high-order drive signal and low level drive signal separately.
Power supply changeover device of the present invention increases a resistance and slows down rise time of the first transistor, that is, see through and reduce dv/dt, reduce the coupled voltages that is coupled to the low level voltage zone, in addition, Schottky diode in parallel on damping resistance is to reduce the influence of damping resistance to the adaptive threshold driver circuit, reduced the duration of short circuit, thereby reduce the probability that punctures, increased the useful life of power supply changeover device, in this kind power supply changeover device puts into effect, because of its long service life, need not frequent replacing, reduced production cost, and, the present invention need not existing peripheral circuit is made change, and its practicality is stronger.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Fig. 1 illustrates and is known a kind of DC-DC converter.
Fig. 2 illustrates the structural representation into a kind of existing power circuit.
Fig. 3 illustrates a kind of structural representation that improves the power supply changeover device of synchronous rectifying loop breakdown for the embodiment of the invention.
Fig. 4 illustrates the circuit diagram into first kind of power circuit of the embodiment of the invention.
Fig. 5 illustrates the circuit diagram into second kind of power circuit of the embodiment of the invention.
Embodiment
One of feature of the present invention is to have increased a resistance and/or a Schottky diode on common circuit, strengthened transistorized fail safe, in the punch-through of the field-effect transistor of having avoided high-order voltage zone and low level voltage zone to a greater extent, make design safety and reliable more.
With reference to Fig. 3, it is for a kind of structural representation that improves the power supply changeover device of synchronous rectifying loop breakdown of the embodiment of the invention.Power supply changeover device of the present invention is a DC-DC converter, in order to convert an input voltage to an output voltage.As shown in the figure, the power supply changeover device that improves synchronous rectifying loop breakdown comprises comparison circuit 301, modulation circuit 303, power circuit 305, voltage stabilizing circuit 307 and feedback circuit 309.Wherein, power circuit 305 is treated voltage of voltage regulation in order to convert this input voltage to one.Voltage stabilizing circuit 307 is coupled to power circuit 305, in order to will treat that voltage of voltage regulation is transformed into output voltage.Feedback circuit 309 is coupled to voltage stabilizing circuit 307, in order to output voltage is transformed into feedback voltage.Comparison circuit 301 is coupled to feedback circuit 309, in order to compare feedback voltage and reference voltage.Modulation circuit 303 is coupled to comparison circuit 301 and power circuit 305, in order to the comparative result of being exported according to comparison circuit 301, and the operating state of power controlling circuit 305 behind modulation.When power supply changeover device moves, after comparison circuit 301 receives reference voltage and feedback voltage feedback voltage and reference voltage are compared, comparative result is sent to modulation circuit 303, modulation circuit 303 is exported a pulse-width modulation signal (PWM) and a reverse pulse-width modulation signal (PWM) according to the comparative result of comparison circuit 301 outputs behind modulation.After power circuit 305 receives these signals, the operating state of power controlling circuit 305.Wherein, feedback circuit 309 can be a bleeder circuit.Voltage stabilizing circuit 307 can be made up of inductance and electric capacity, treats to export stable output voltage after voltage of voltage regulation charges to electric capacity by inductance.Comparison circuit 301 comprises a comparator, and when comparator was worked, its anode was imported this reference voltage, and its negative terminal is imported this feedback voltage, and when feedback voltage during greater than reference voltage, comparator is exported a negative signal; When feedback voltage during less than reference voltage, comparator is exported a positive signal.
With reference to Fig. 4, it is the circuit diagram of first kind of power circuit of the embodiment of the invention.Power circuit of the present invention comprises high bit driver circuit 401, low bit driver circuit 403, power-supply circuit 405, the first transistor 407, transistor seconds 409, first resistance 413, second resistance 411 and first diode 415 in order to an input voltage is converted to an output voltage.High bit driver circuit 401 is in order to produce a high-order drive signal.Low bit driver circuit 403 is coupled to high bit driver circuit 401, and in order to produce a low level drive signal, wherein, the work period of high-order drive signal and low level drive signal does not overlap mutually.The first transistor 407 has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to input voltage, and second source/drain electrode is coupled to treats that voltage of voltage regulation, grid are coupled to high-order drive signal.Transistor seconds 409 has first source/drain electrode, second source/drain electrode and the grid equally, and first source/drain electrode is coupled to second source/drain electrode of the first transistor 407, and second source/drain electrode is coupled to an earthed voltage.Power-supply circuit 405 has first end and second end, and first end is coupled to second source/drain electrode of the first transistor 407, imports voltage to its first end in order to provide one by a diode 421 and an electric capacity 423.Second resistance, 411 1 ends are coupled to high bit driver circuit 401, and its other end is coupled to second end of power-supply circuit 405.First resistance, 413 1 ends are coupled to the grid of transistor seconds 409, and its other end is coupled to the low level drive signal.First diode 415 has positive pole and negative pole, and positive pole is coupled to the grid of transistor seconds 409, and negative pole is coupled to the low level drive signal.
The first transistor 407 among Fig. 4 and transistor seconds 409 are that the power MOSFET with the N type is an example, but and non-limiting the present invention, it can be P type or the combination of the two etc., it mainly is the usefulness as switch, so the present invention uses first source/drain electrode and second source/drain electrode to represent two end points of transistor as switch.
When the present invention puts into operation, the high bit driver circuit 401 of the pwm signal input power circuit 305 of modulation circuit 303 outputs, the low bit driver circuit 403 of pwm signal input power circuit 305.The inhibit signal that pwm signal and low bit driver circuit 403 are exported is exported high-order drive signal by reaching grid 431 and buffer 433 to the grid of the first transistor 407.The inhibit signal that pwm signal and high bit driver circuit 401 are exported is by reaching grid 435 and the buffer 437 grid output low level drive signal to transistor seconds 409.Second resistance 411 that is coupled to power-supply circuit 405 and high bit driver circuit 401 can slow down the rise time of the first transistor 407, that is, reduce dv/dt, can reduce the coupled voltages that is coupled to the low level voltage zone like this, thereby can improve the probability of puncture.
With reference to Fig. 5, it is the circuit diagram of second kind of power circuit of the embodiment of the invention.Power circuit of the present invention comprises high bit driver circuit 401, low bit driver circuit 403, power-supply circuit 405, the first transistor 407, transistor seconds 409, first resistance 413, the 3rd resistance 501 and first diode 415 in order to an input voltage is converted to an output voltage.High bit driver circuit 401 is in order to produce a high-order drive signal.Low bit driver circuit 403 is coupled to high bit driver circuit 401, and in order to produce a low level drive signal, wherein, the work period of high-order drive signal and low level drive signal does not overlap mutually.The first transistor 407 has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to input voltage, and second source/drain electrode is coupled to treats voltage of voltage regulation.Transistor seconds 409 has first source/drain electrode, second source/drain electrode and the grid equally, and first source/drain electrode is coupled to second source/drain electrode of the first transistor 407, and second source/drain electrode is coupled to an earthed voltage.Power-supply circuit 405 has first end and second end, and first end is coupled to second source/drain electrode of the first transistor 407, imports voltage to its first end in order to provide one by a diode 421 and an electric capacity 423, and second end is coupled to high bit driver circuit 401.The 3rd resistance 501 1 ends are coupled to high bit driver circuit 401, and its other end is coupled to the grid of the first transistor 407.First resistance, 413 1 ends are coupled to the grid of transistor seconds 409, and its other end is coupled to the low level drive signal.First diode 415 has positive pole and negative pole, and positive pole is coupled to the grid of transistor seconds 409, and negative pole is coupled to the low level drive signal.
When the present invention puts into operation, the high bit driver circuit 401 of the pwm signal input power circuit 305 of modulation circuit 303 outputs, the low bit driver circuit 403 of pwm signal input power circuit 305.The inhibit signal that pwm signal and low bit driver circuit 403 are exported is exported high-order drive signal by reaching grid 431 and buffer 433 to the grid of the first transistor 407.The inhibit signal that this pwm signal and high bit driver circuit 401 are exported is by reaching grid 435 and the buffer 437 grid output low level drive signal to transistor seconds 409.The 3rd resistance 501 that is coupled to the grid of the first transistor 407 and high bit driver circuit 401 can slow down the rise time of the first transistor 407, that is, reduce dv/dt, can reduce the coupled voltages that is coupled to the low level voltage zone like this, thereby can improve the probability of puncture.
In the framework of above-mentioned two kinds of embodiment; first resistance 413 and first diode 415 all be with second resistance 411 or the 3rd resistance 501 the two one of simultaneously and deposit; but be not in order to limit the present invention; have only first resistance 413 and first diode 415 to have or only have the framework of second resistance 411 or the 3rd resistance 501 separately; also can improve the shortcoming of traditional circuit, also be at protection category of the present invention.
In sum, at the power supply changeover device of synchronous rectifying loop breakdown that improves of the present invention by increasing by a resistance in high position district, or on the damping resistance in low level district a diode in parallel, slow down rise time of the first transistor, reduce and be coupled to the coupled voltages in low level district, first diode when short circuit with the damping resistance short circuit, can reduce the influence of damping resistance to the adaptive threshold driver circuit, discharge electric charge on the capacitor C gs because reduced damping resistance, reduce the duration of short circuit, thereby reduce the probability that punctures, increased the useful life of power supply changeover device, in this kind power supply changeover device puts into effect,, need not frequent replacing because of its long service life, reduced production cost, and the present invention need not existing peripheral circuit is made change, and its practicality is stronger.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when with being as the criterion that claim was defined.
Claims (12)
1. power supply changeover device that improves synchronous rectifying loop breakdown, in order to an input voltage is converted to an output voltage, this power supply changeover device comprises:
One power circuit comprises:
One high bit driver circuit is in order to produce a high-order drive signal;
One low bit driver circuit is coupled to this high bit driver circuit, and in order to produce a low level drive signal, wherein, the work period of this high position drive signal and this low level drive signal does not overlap mutually;
One the first transistor has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to this input voltage, second source/drain electrode is coupled to one and treats voltage of voltage regulation, grid is coupled to this high position drive signal, and wherein, this treats that voltage of voltage regulation is this output voltage after voltage stabilizing;
One transistor seconds has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to second source/drain electrode of this first transistor, and second source/drain electrode is coupled to an earthed voltage;
One first resistance, the one end is coupled to the grid of this transistor seconds, and its other end is coupled to this low level drive signal; And
One first diode has positive pole and negative pole, and positive pole is coupled to the grid of this transistor seconds, and negative pole is coupled to this low level drive signal;
One comparison circuit, in order to compare a feedback voltage and a reference voltage, wherein, this feedback voltage and this output voltage have a predetermined relationship; And
One modulation circuit, be coupled to this comparison circuit and this power circuit, in order to the comparative result of exporting according to this comparison circuit, this power circuit of control behind modulation, and make this high bit driver circuit and should produce this high position drive signal and this low level drive signal separately by low bit driver circuit.
2. power supply changeover device as claimed in claim 1 is characterized in that, this power circuit also comprises:
One power-supply circuit has first end and second end, and first end is coupled to second source/drain electrode of this first transistor, imports voltage to its first end in order to provide one; And
One second resistance, one end are coupled to this high bit driver circuit, and its other end is coupled to second end of this power-supply circuit.
3. power supply changeover device as claimed in claim 1 is characterized in that, this power circuit also comprises:
One the 3rd resistance is arranged between the grid of this high bit driver circuit and this first transistor, and the one end is coupled to this high position drive signal, and its other end is coupled to the grid of this first transistor.
4. power supply changeover device as claimed in claim 1 is characterized in that this power supply changeover device also comprises a voltage stabilizing circuit, is coupled to second source/drain electrode of this first transistor, is used for this is treated that voltage of voltage regulation is converted to this output voltage.
5. power supply changeover device as claimed in claim 4 is characterized in that this power supply changeover device also comprises a feedback circuit, and the one end is coupled to this voltage stabilizing circuit, and its other end is coupled to this comparison circuit, is used for this output voltage is converted to this feedback voltage.
6. power supply changeover device that improves synchronous rectifying loop breakdown, in order to an input voltage is converted to an output voltage, this power supply changeover device comprises:
One power circuit comprises:
One high bit driver circuit is in order to produce a high-order drive signal;
One low bit driver circuit is coupled to this high bit driver circuit, and in order to produce a low level drive signal, wherein, the work period of this high position drive signal and this low level drive signal does not overlap mutually;
One the first transistor has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to this input voltage, second source/drain electrode is coupled to one and treats voltage of voltage regulation, grid is coupled to this high position drive signal, and wherein, this treats that voltage of voltage regulation is this output voltage after voltage stabilizing;
One transistor seconds has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to second source/drain electrode of this first transistor, and second source/drain electrode is coupled to an earthed voltage, and grid is coupled to this low level drive signal;
One power-supply circuit has first end and second end, and first end is coupled to second source/drain electrode of this first transistor, imports voltage to its first end in order to provide one; And
One resistance, one end are coupled to this high bit driver circuit, and its other end is coupled to second end of this power-supply circuit;
One comparison circuit, in order to compare a feedback voltage and a reference voltage, wherein, this feedback voltage and this output voltage have a predetermined relationship; And
One modulation circuit, be coupled to this comparison circuit and this power circuit, in order to the comparative result of exporting according to this comparison circuit, this power circuit of control behind modulation, and make this high bit driver circuit and should produce this high position drive signal and this low level drive signal separately by low bit driver circuit.
7. power supply changeover device as claimed in claim 6 is characterized in that this power supply changeover device also comprises a voltage stabilizing circuit, is coupled to second source/drain electrode of this first transistor, is used for this is treated that voltage of voltage regulation is converted to this output voltage.
8. power supply changeover device as claimed in claim 7 is characterized in that this power supply changeover device also comprises a feedback circuit, is arranged between this voltage stabilizing circuit and this comparison circuit, is used for this output voltage is converted to this feedback voltage.
9. power supply changeover device that improves synchronous rectifying loop breakdown, in order to an input voltage is converted to an output voltage, this power supply changeover device comprises:
One power circuit comprises:
One high bit driver circuit is in order to produce a high-order drive signal;
One low bit driver circuit is coupled to this high bit driver circuit, and in order to produce a low level drive signal, wherein, the work period of this high position drive signal and this low level drive signal does not overlap mutually;
One the first transistor has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to this input voltage, and second source/drain electrode is coupled to one and treats voltage of voltage regulation, and wherein, this treats that voltage of voltage regulation is this output voltage after voltage stabilizing;
One transistor seconds has first source/drain electrode, second source/drain electrode and the grid, and first source/drain electrode is coupled to second source/drain electrode of this first transistor, and second source/drain electrode is coupled to an earthed voltage, and grid is coupled to this low level drive signal; And
One resistance, the one end is coupled to the grid of this first transistor, and its other end is coupled to this high position drive signal;
One comparison circuit, in order to compare a feedback voltage and a reference voltage, wherein, this feedback voltage and this output voltage have a predetermined relationship; And
One modulation circuit, be coupled to this comparison circuit and this power circuit, in order to the comparative result of exporting according to this comparison circuit, this power circuit of control behind modulation, and make this high bit driver circuit and should produce this high position drive signal and this low level drive signal separately by low bit driver circuit.
10. power supply changeover device as claimed in claim 9, it is characterized in that, this power circuit also comprises a power-supply circuit, have first end and second end, first end is coupled to second source/drain electrode of this first transistor, in order to provide one to import voltage to its first end, second end is coupled to this high position drive signal.
11. power supply changeover device as claimed in claim 9 is characterized in that, this power supply changeover device also comprises a voltage stabilizing circuit, is coupled to second source/drain electrode of this first transistor, is used for this is treated that voltage of voltage regulation is converted to this output voltage.
12. power supply changeover device as claimed in claim 11 is characterized in that, this power supply changeover device also comprises a feedback circuit, is arranged between this voltage stabilizing circuit and this comparison circuit, is used for this output voltage is converted to this feedback voltage.
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| CNA2007101670301A CN101420177A (en) | 2007-10-25 | 2007-10-25 | Power source converter improving synchronous rectifying loop breakdown |
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| CNA2007101670301A CN101420177A (en) | 2007-10-25 | 2007-10-25 | Power source converter improving synchronous rectifying loop breakdown |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715657A (en) * | 2012-10-08 | 2014-04-09 | 立锜科技股份有限公司 | Power converter with short-circuit protection function |
| CN104779782A (en) * | 2015-04-17 | 2015-07-15 | 华为技术有限公司 | Voltage conversion circuit |
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2007
- 2007-10-25 CN CNA2007101670301A patent/CN101420177A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715657A (en) * | 2012-10-08 | 2014-04-09 | 立锜科技股份有限公司 | Power converter with short-circuit protection function |
| CN103715657B (en) * | 2012-10-08 | 2016-08-03 | 立锜科技股份有限公司 | There is the power supply changeover device of short-circuit protection function |
| CN104779782A (en) * | 2015-04-17 | 2015-07-15 | 华为技术有限公司 | Voltage conversion circuit |
| CN104779782B (en) * | 2015-04-17 | 2017-06-20 | 华为技术有限公司 | A kind of voltage conversion circuit |
| US10148182B2 (en) | 2015-04-17 | 2018-12-04 | Huawei Technologies Co., Ltd. | Voltage conversion circuit with bleed module |
| US10680519B2 (en) | 2015-04-17 | 2020-06-09 | Huawei Technologies Co., Ltd. | Voltage conversion circuit with a bleed circuit |
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Open date: 20090429 |