CN101415858B - Vent groove modified sputter target assembly - Google Patents
Vent groove modified sputter target assembly Download PDFInfo
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- CN101415858B CN101415858B CN2007800116449A CN200780011644A CN101415858B CN 101415858 B CN101415858 B CN 101415858B CN 2007800116449 A CN2007800116449 A CN 2007800116449A CN 200780011644 A CN200780011644 A CN 200780011644A CN 101415858 B CN101415858 B CN 101415858B
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- target
- air discharge
- sputter target
- track
- discharge duct
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
A sputter target assembly (105) including vent grooves (420) having a certain configuration so as to reduce target (110) arcing during the physical vapor deposition of a film.
Description
Technical field
The present invention relates to a kind of sputtering target and the device that holds this sputtering target with certain vent groove configuration.Especially, groove structure of the present invention reduces ratio of defects through reducing arc-over and the deposition of particle subsequently on base material.
Background technology
In the production of the sputtering target that is used for using,, hope to produce the target that can on wafer, form the conforming sputtering surface of film when having sputter for example in semi-conductor industry.Physical vapor deposition is widely used technology, thus the deposition of the thin layer of the material of the target base material that is applied to expect.
Above-mentioned arts demand has the gaseous ion bombardment that is formed the target on surface by the predetermined material of formation of deposits film on base material or layer.The ion bombardment of target not only produces the atom or the molecule of the target material that is used for sputter, and gives target considerable heat energy.Heat energy with target form supporting plate that the position of heat exchange relationship is provided with below or around scatter and disappear.Target is formed the part of cathode assembly, and cathode assembly and anode place in the vacuum chamber that is full of the rare gas element that is preferably argon together.High-voltage electric field is applied between negative electrode and the anode.Rare gas element is through the ionization with the collision of the electronics of emitting from negative electrode.Positively charged gaseous ion attracted to negative electrode, and impacts these ions dislodge target materials with target surface.The target material of being ejected passes to be drained outer cover (evacuated enclosure) and on predetermined base material, is deposited as film, predetermined base material be provided with usually near anode.
Sedimentary in theory film very evenly and do not have a defective.But the drop of a large amount of undesirable target materials or splat (splat) are formed on the indoor base material of conventional sputter.These defectives be considered to by usually said arc-over phenomenon cause (if arc-over takes place, target can produce undesirable consequence, for example rust staining, scale off, the local pyrexia of slight crack and target material).
The conventional sputter sediment chamber typically uses the trim with the groove that has sealing member, for example is arranged in and forms vacuum-packed O shape circle between target assembly and the locular wall.Especially, sealing member is usually placed between sputter target assemblies (that is, so-called runway (race) or racing track (race track)) and the Vakuumkammer sidewall, and wherein target assembly is as the top or the cover of chamber.Gas possibly be trapped within the space that the O type circle between the mating surface of groove of this trim forms.Therefore, in sputter procedure, entrap gas flows in the Vakuumkammer from the groove of trim, causes the target arc-over.
Ceasing to transmit various effort reduce, remove or control the arc-over phenomenon that produces by entrap gas.People such as Mostovoy are at USP the 6th, 416, disclose in No. 634 a plurality ofly to be configured to limit gas and to pass specific restricted opening from O shape circle runway mobile air discharge duct.Other new design of attempting to reduce the air discharge duct of arc-over proposes.Shown in Figure 1A-1C, the geometrical shape of air discharge duct is improved through width and their combination that increases distance from the sidewall to the groove, increases groove.It's a pity that none was considered to sufficiently to minimize arc-over and the resultant film defects that is deposited on the base material during these improved.
In order to overcome the defective relevant with correlation technique, the purpose of this invention is to provide new grooved vent structure, it helps during vacuumizing, to remove gas from Vakuumkammer.
Another object of the present invention provides the air discharge duct of the semi-circular cross-section that is designed to not have the sharp corner, minimizes turbulent flow thus, and can not limit air-flow.
Through the analysis to specification sheets, accompanying drawing and additional claim, other purpose of the present invention and aspect are conspicuous for those of ordinary skills.
Summary of the invention
Sputter target assemblies comprises the air discharge duct with ad hoc structure, reduces the target arc-over during the thin film physics vapour deposition thus.
Description of drawings
Objects and advantages of the present invention can well be understood through the detailed description of the following preferred implementation relevant with respective drawings, and numeral identical in the accompanying drawing is represented same characteristic all the time, wherein:
Figure 1A-C is the diagram that has wherein changed the sputter target assemblies of the venting port size of slotting;
Fig. 2 is the synoptic diagram of traditional magnetic control sputtering system;
Fig. 3 shown in being is the skeleton view with the target supporting plate that holds the racing track that sealing member and air discharge duct is disposed therein;
What Fig. 4 A described is the synoptic diagram according to air discharge duct of the present invention;
Shown in Fig. 4 B is to have eight skeleton views that are positioned at the sputter target assemblies of the semicircle conical grooves of racing track contact position;
Fig. 4 C is the realistic model of sputtering target constructed in accordance; And
Shown in Figure 5 is the results of property with target assembly of the semicircle conical grooves of comparing with traditional groove.
Embodiment
In the thin film fabrication of physical gas-phase deposition on base material, must understand and the defective that is caused by arc-over that will occur in during the processing minimizes.
The conventional sputter system 100 of the sputter target assemblies that is to use introduction 105 as shown in Figure 2.Sputter target assemblies comprises target 110 and extends beyond the target supporting plate 115 of target 110 circumferences, and comprises the peripheral flange that is connected with sidewall 120 in order to form sealed process chamber 125.With reference to figure 3, peripheral flange, perhaps sputter target assemblies 110 is own under some situation, comprises so-called " runway ", " racing track " or groove 300, and it is suitable for holding sealing member, for example O shape circle.Be appreciated that sealing member needn't have O shape ring structure, can be to process by any suitable material with sealing function.
Racing track comprises a plurality of air discharge ducts 310 that equidistantly separate in process cavity 125 inboards.When process zone was vacuumized, air discharge duct allowed gas between O shape circle and inwall runway, to extract out, otherwise gas can be trapped within the there, discusses as follows.This entrap gas has many sources, comprises O shape circle outgas, from pass air entrapment that O shape circle forms by O shape circle between the exhaust cycle of barometric point to the air infiltration of the vacuum environment of sputtering system 100, in sputtering system 100 or the like around the surrounding environment of sputtering system 100.There is not the help of the venting port of fluting, the sealing of the O shape circle in the entrap gas meeting overslaugh racing track; And the proper seal of the circle of the O shapes in the groove 300 is absolutely necessary, and it helps the abundant sealing between the target back up pad 115 and sidewall 120 during the vacuum operating.
With reference to figure 2, sputtering system 100 comprises the magnet 130 that is arranged in target supporting plate 115 tops again, with the switch 135 that is used to be connected target supporting plate 115 and dc voltage power supply 140.Substrate support 145 be arranged on sputter target assemblies 105 in the sealed process chamber 125 below.Substrate support is suitable for during processing support semiconductor base material 150 in sputtering system 100.
At run duration, first promotes member 155 rising base materials 150, and sealed process chamber 150 is pumped to the pressure (that is vacuum) of about 2 to 5 millitorr through the vacuum pump (not shown).Switch 135 closures, big negative voltage (for example, about 500 volts) are substrate support 145 and being added on the target assembly 105 relatively.Corresponding electric field forms between target assembly 105 and substrate support 145.Rare gas element, for example argon (Ar) is introduced into chamber afterwards.Positively charged argon ion (Ar+), for example argon ion 160, between target assembly 105 and semiconductor substrate 150, form thus.Positively charged argon ion quicken towards and the surface of colliding negatively charged target 110.The result of these collisions is that electronics is emitted from target 110.
Owing to be created in the electric field between target assembly 105 and the substrate support 145, each electronics quickens towards the direction of substrate support 145, and moves with spiral trajectory owing to the magnetic field of magnet 130 generations.The electronics that spiral moves clashes into the ar atmo of base material top at last, produces additional band positive charge argon ion thus, its quicken towards and bump target 110.Additional thus electronics produces from target 110, has produced additional positively charged argon ion like this, has produced additional electronics like this, or the like.This feedback process continues always, up to above substrate support 145, forming steady-state plasma.
When plasma body arrives steady state; The zone that is substantially free of charged particle forms between the surface of target 110 and plasma body top boundary; And (for example be considered to form tunnel (tunnel) from the single electron that target 110 is emitted; With wavy form rather than with particle shape), keep this big voltage difference thus.Like following further description, plasma body is broken once in a while, and the charged particle of big flux (being similar to electric current flows) passes plasma body (that is, producing arc-over).
Except that electronics, because the momentum transfer between argon ion and the target 110, target atom sprays perhaps " sputter " from target 110 and comes out.The target atom that sputters out moves and is concentrated on the semiconductor substrate 200, forms thin film of target material above that.In theory, the very even and zero defect of this film.But in the film that the drop of a large amount of target materials or splat (that is, splat defects or splat) can appear in the sputtering system of using traditional target supporting plate that wherein has grooved vent, formed by sputtering sedimentation.
Although do not want to be confined to any theoretical especially, believe that these splat defects are arc-over generations of being caused by target 110 local heating, its fusing and discharge a part of target material.The target material of emitting moves on the base material 150, sputter above that, cooling and reorganization because surface tension, in deposit film, form splat defects.With respect to typical metal line width (for example) less than 1 micron, splat very big (for example, 500 microns), and can shorten metal wire and influence device production.Believing, be created in more than 50% of defective in the film in the current interconnect metallizing scheme, is induction, splat type defective.
Have been found that conventional vent grooves is through causing the formation that the target arc-over promotes splat.Especially, have been found that the use that has the special construction groove has in a large number caused enclosing from O shape the concentrated stream (concentrated flow) of the entrap gas of process zone.Concentrate trapped gas flow on the direction of the plasma body that forms, producing high trapped gas partial pressure.Owing to exist during the processing and cross the high pressure of distance between target and the base material; When entrap gas when grooved vent is discharged and get into process zone, the high trapped gas partial pressure in each air discharge duct has increased the possibility that arc-over takes place between target surface and plasma body top boundary.For example, entrap gas can have enough pressure and leave the plasma body that the grooved vent entering has density, causes the electrical breakdown of trapped gas atoms.Therefore increased the possibility that splat forms.
Fig. 4 A is according to vent groove configuration synoptic diagram of the present invention.Comprise that with conventional sputter target assemblies the relevant discussion of supporting plate with outstanding circumference is the same.But as stated, the present invention likewise is applicable to does not have outstanding target assembly.With reference to figure 4A and 4B, target assembly comprises racing track 400, wherein accommodates sealing member, for example O shape circle.Be different from the conventional target supporting plate 115 among Fig. 2, the groove of target supporting plate of the present invention has inwall 410, and it has a plurality of air discharge ducts 420 wherein, that special construction is arranged that are arranged in.Although can use any amount of equidistance air discharge duct, preferred air discharge duct 420 is even numbers, makes during vacuum applies, (that is, to be also referred to as " vacuumizing ") gas is arranged to process cavity thus evenly.Most preferably, use eight restrictive air discharge ducts.The preferred structure of air discharge duct and size are discussed with reference to figure 4C below.
The present invention can comprise the air discharge duct of any amount, and its structure is designed to promote rapidly and vacuum pumping completely, therefore reduces arc-over.More precisely, the geometrical shape of air discharge duct changes unobstructed the flowing that the inlet side can guarantee O shape circle allows during vacuumizing entrapped air or gas.Therefore, air discharge duct of the present invention reduces the concentration of the entrapped air of discharging through each groove venting port fully, reduces the local pressure that is discharged to entrap gas at the bottom of the process zone, therefore reduces the possibility of arc-over.
With reference to figure 4C, around O shape circle runway, it remains on the integrity of O type circle sealing under the high vacuum condition to air discharge duct with geometric arrangement, but allows to enter chamber at the gas of O shape circle inlet side.Air discharge duct preferably has semisphere or semicircular structure, and it all has variable cross-section on the vertical and horizontal plane among both.Do not have the sharp corner to promote unrestricted gas flow, and turbulent flow is minimized.
Shown in Fig. 4 C, air discharge duct is arranged on the circumference of target assembly.Air discharge duct is positioned on the racing track that has in the face of the opening of process zone.The size of air discharge duct can be suitable for the different size target assembly and use their each chamber.In preferred embodiment, 8 semicircle conical grooves with approximately equal apart from interval around the circumference of racing track.The size of air discharge duct can be suitable for the groove track of various size, and in preferred embodiment, it is processed into the size of 0.200 inch diameter, about 0.080 inch degree of depth.Certainly, the degree of depth of air discharge duct can not contact the bottom water plane of racing track.Air discharge duct is arranged between O shape annular groove internal diameter and the target sidewall 45 ° and locates.
Embodiment
As shown in Figure 5, as through shown in the base material after decomposing, the air discharge duct of identity basis the present invention configuration has reduced arc-over.Process a large amount of 25 wafers (twenty five wafer), deposited the aluminium alloy material bed of material above that.The a collection of utilization target with semisphere or semicircular structure air discharge duct of the present invention that is processed into, three batches are prepared into the target with standard rectangular configuration vent groove.All wafer under chamber pressure 2.1 mmhg, is processed into the time limit of service (that is, being used to its maximum voltage until target) of 950 kilowatt-hours in 13 kw of power.Shown in following form, duraluminum is deposited into the thickness of 4,000 dusts, measures defective.
Form
| Air discharge duct type on the target | Instrument | Processing batch | Batch defective | Ratio of defects |
| The present invention's (hemispherical dome structure) | TSP143 | 48 | 2 | 4％ |
| Tradition (rectangular configuration) | TBM150 | 54 | 7 | 13％ |
| TBM144 | 92 | 17 | 18％ | |
| TSP145 | 63 | 9 | 14％ | |
| Normal mran | 209 | 33 | 15％ | |
| Difference | 11％ |
Like this, shown in the form of top, the target with semi-spherical grooves of the present invention is being eliminated acquisition 11% improvement aspect the defective of arc-over generation.Likewise, these results form with chart in Fig. 5 shows.
The present invention writes up with reference to its certain embodiments, in the scope of the claim of enclosing, carries out various changes and improvement and equivalence is used not being contrary to, and is apparent to those skilled in the art.
Claims (14)
1. the sealed structure of a physics vapour deposition system comprises:
Be suitable for holding the track of sealing member; Track has a plurality of air discharge ducts with semisphere or semicircle configuration; During physics vapour deposition system vacuumizes; To allow the removing entrap gas in whole tracks fully,, and during plasma process subsequently, reduce the arc-over of perhaps eliminating target so that realize vacuum therein.
2. sealed structure as claimed in claim 1 is characterized in that, all has variable structure on the vertical and horizontal plane on both with the air discharge duct of semisphere or semicircle configuration.
3. sealed structure as claimed in claim 1 is characterized in that, further comprises: with at least four air discharge ducts apart from layout that on the track periphery, equate mutually.
4. sealed structure as claimed in claim 1 is characterized in that, sealing member is an O shape circle.
5. sealed structure as claimed in claim 1 is characterized in that, sealing member provides the abundant sealing between target supporting plate and process cavity sidewall in said physics vapour deposition system.
6. sealed structure as claimed in claim 1 is characterized in that, air discharge duct is processed into the size of 0.200 inch diameter, 0.080 inch degree of depth.
7. sealed structure as claimed in claim 1 is characterized in that, air discharge duct is arranged in 45 ° of degree places between inner track radius and target sidewall.
8. the sputter target assemblies of a physics vapour deposition system, sputter target assemblies comprises:
The target supporting plate that has trim; Trim comprises the track that is suitable for holding sealing member; Track comprises a plurality of openings with semisphere or semicircle configuration, and during physics vapour deposition system vacuumized, it allowed to remove fully entrap gas in whole grooves; So that realize vacuum therein, and during plasma process subsequently, reduce the arc-over of perhaps eliminating target; With
Be connected to the sputtering target of supporting plate.
9. sputter target assemblies as claimed in claim 8 is characterized in that, all has variable structure on the vertical and horizontal plane on both with the opening of the air discharge duct of semisphere or semicircle configuration.
10. sputter target assemblies as claimed in claim 8 is characterized in that, further comprises: with at least four openings apart from layout that on the track periphery, equate mutually.
11. sputter target assemblies as claimed in claim 8 is characterized in that, sealing member is an O shape circle.
12. sputter target assemblies as claimed in claim 8 is characterized in that, sealing member provides the abundant sealing between target supporting plate and process cavity sidewall in said physics vapour deposition system.
13. sputter target assemblies as claimed in claim 8 is characterized in that, opening is processed into the size of 0.200 inch diameter, 0.080 inch degree of depth.
14. sputter target assemblies as claimed in claim 8 is characterized in that, aperture arrangement in orbit the footpath and the target sidewall between 45 ° of degree places.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78871506P | 2006-04-04 | 2006-04-04 | |
| US60/788,715 | 2006-04-04 | ||
| US11/731,105 US20080236499A1 (en) | 2007-03-30 | 2007-03-30 | Vent groove modified sputter target assembly and apparatus containing same |
| US11/731,105 | 2007-03-30 | ||
| PCT/US2007/008130 WO2007114899A2 (en) | 2006-04-04 | 2007-04-03 | Vent groove modified sputter target assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101415858A CN101415858A (en) | 2009-04-22 |
| CN101415858B true CN101415858B (en) | 2012-04-25 |
Family
ID=40595609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800116449A Expired - Fee Related CN101415858B (en) | 2006-04-04 | 2007-04-03 | Vent groove modified sputter target assembly |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101415858B (en) |
| TW (1) | TWI417407B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210020484A1 (en) * | 2019-07-15 | 2021-01-21 | Applied Materials, Inc. | Aperture design for uniformity control in selective physical vapor deposition |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6416634B1 (en) * | 2000-04-05 | 2002-07-09 | Applied Materials, Inc. | Method and apparatus for reducing target arcing during sputter deposition |
| CN1910304A (en) * | 2004-02-03 | 2007-02-07 | 霍尼韦尔国际公司 | Physical vapor deposition target constructions |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6149776A (en) * | 1998-11-12 | 2000-11-21 | Applied Materials, Inc. | Copper sputtering target |
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2007
- 2007-04-03 CN CN2007800116449A patent/CN101415858B/en not_active Expired - Fee Related
- 2007-04-03 TW TW96111914A patent/TWI417407B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6416634B1 (en) * | 2000-04-05 | 2002-07-09 | Applied Materials, Inc. | Method and apparatus for reducing target arcing during sputter deposition |
| CN1910304A (en) * | 2004-02-03 | 2007-02-07 | 霍尼韦尔国际公司 | Physical vapor deposition target constructions |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI417407B (en) | 2013-12-01 |
| CN101415858A (en) | 2009-04-22 |
| TW200811303A (en) | 2008-03-01 |
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
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Granted publication date: 20120425 Termination date: 20140403 |