CN101413068A - Metal gallium longitudinal temperature gradient solidification purification apparatus and method - Google Patents
Metal gallium longitudinal temperature gradient solidification purification apparatus and method Download PDFInfo
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- CN101413068A CN101413068A CNA2008101556870A CN200810155687A CN101413068A CN 101413068 A CN101413068 A CN 101413068A CN A2008101556870 A CNA2008101556870 A CN A2008101556870A CN 200810155687 A CN200810155687 A CN 200810155687A CN 101413068 A CN101413068 A CN 101413068A
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- seed crystal
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Abstract
The invention discloses a longitudinal temperature gradient solidification-purification method and a device for metallic gallium. The device comprises three parts, namely a growth zone, a shouldering zone and a seed crystal zone, wherein the growth zone is a segment of cylindrical pipe barrel; the shouldering zone is an inverse frustum pipe barrel connected with the lower end of the growth zone; and the seed crystal zone is a cylindrical blind pipe connected with the lower end of the shouldering zone. The method comprises the following steps of putting metallic gallium seed crystal into the seed crystal zone, injecting liquid metallic gallium into the purification device and cooling the seed crystal zone. The method purifies the metallic gallium further to the extremely high purity of 6N or 7N on the basis of 4N. The invention has the advantages that the device is simple in mechanism; the method is convenient to operate; and purification quantification is convenient to control.
Description
Technical field
The present invention relates to a kind of purifying plant and method, relate in particular to a kind of metal gallium longitudinal temperature gradient solidification purification apparatus and method.
Background technology
A kind of material is frozen into when solid-state by liquid part when it and since impurity its liquid and solid-state in different solubility, the impurity concentration in often solid-state will be lower than the impurity concentration in the liquid state, this phenomenon is a dephlegmation.Utilize this phenomenon to purify material, but the weight of the solid phase after solidifying is with the naked eye wayward, again because gallium has lower fusing point, be more or less the same with normal temperature, the variation of envrionment temperature has bigger influence to crystallization speed, and quantitative work is relatively more difficult during production.Also do not utilize at present dephlegmation realize quantitatively the purifying metals apparatus and method of gallium.In the prior art, the refining of gallium is purified and is generally adopted traditional technologys such as chemical extraction, electrolysis, because the restriction of state of the art and cost, the purity of the finished product gallium of producing generally also has only 4N, cause the production of 6N, the such high-purity gallium of 7N very difficult, production cost is also high, has seriously restricted the application of high-purity gallium material.
Summary of the invention:
The objective of the invention is to overcome above-mentioned deficiency, a kind of metal gallium longitudinal temperature gradient solidification purification apparatus and method are provided.
Technical scheme of the present invention is as follows: a kind of metal gallium longitudinal temperature gradient solidification purification apparatus, comprise vitellarium, shouldering district, seed crystal district three parts, described vitellarium is one section cylindrical socket, described shouldering district is the inversed taper platform shape socket that is connected with lower end, described vitellarium, and described seed crystal district is the cylindrical blind pipe that is connected with lower end, described shouldering district.
Described seed crystal district is provided with refrigerating unit, and described refrigerating unit is a cold dish.
Described purifying plant has non-polar plastic to make, and described plastics are PE or Teflon or Nylon.
Described vitellarium tube wall is provided with scale marks.
A kind of metal gallium longitudinal temperature gradient solidification method of purification comprises the steps: the gallium seed crystal is put into described seed crystal district; The liquid metal gallium is injected described purifying plant; Cool off in the district to described seed crystal.
Described seed crystal is a high-purity gallium.
Described liquid metal gallium temperature is 35 ℃ to 40 ℃.
The cooling temperature in described seed crystal district is 0 ℃-5 ℃.
The beneficial effect that the present invention compared with prior art has is: the present invention can further be purified to the purity of gallium the extreme high purity of 6N, 7N on the basis of 4N; Apparatus of the present invention mechanism is simple, method is easy to operate, the quantitatively control of purifying is convenient, is suitable for scale operation; Greatly reduce the production cost of extreme high purity gallium, improved production efficiency, established the basis of the following widespread use of extreme high purity gallium material.
Description of drawings:
Fig. 1 is a structural representation of the present invention.
Embodiment:
Below in conjunction with the drawings and specific embodiments the present invention is described in detail.
Embodiment 1: as shown in Figure 1, a kind of metal gallium longitudinal temperature gradient solidification purification apparatus, comprise vitellarium 3, shouldering district 5, seed crystal district 1 three parts, described vitellarium 3 is one section cylindrical socket, described shouldering district 5 is the inversed taper platform shape socket that is connected with 3 lower ends, described vitellarium, and described seed crystal district 1 is the cylindrical blind pipe that is connected with 5 lower ends, described shouldering district.Described seed crystal district 1 is provided with refrigerating unit, and described refrigerating unit is a cold dish 8, and cooling fluid 7 wherein is housed.Described purifying plant is made by non-polar plastic Nylon.Described vitellarium 3 tube walls are provided with scale marks 4.
A kind of metal gallium longitudinal temperature gradient solidification method of purification comprises the steps: gallium seed crystal 6 is put into described seed crystal district 1; Liquid metal gallium 2 is injected described purifying plant; Described seed crystal district 1 is cooled off.Described seed crystal is a high-purity gallium.Described liquid metal gallium temperature is 35 ℃.The cooling temperature in described seed crystal district is 0 ℃.Cooling by seed crystal district 1, the liquid metal gallium begins to solidify gradually from seed crystal district 1 to shouldering district 5, vitellarium 3, the solid-state gallium purity of solidifying earlier is than the height of after coagulation, according to producing needs, vitellarium 3 tube walls are provided with the ratio that scale marks 4 can quantitative selection gallium solidifies, to adjust the purity of gallium.In order to obtain the gallium of extreme high purity, need heat the back to the solid-state gallium that solidifies once more and use said apparatus to solidify purification, as this method up to meeting the requirements of purity.
Embodiment 2: its difference from Example 1 is that described purifying plant is made by non-polar plastic, and described plastics are PE, and described liquid metal gallium temperature is 37 ℃.The cooling temperature in described seed crystal district is 3 ℃.
Embodiment 3: its difference from Example 1 is that described purifying plant is made by non-polar plastic Teflon, and described liquid metal gallium temperature is 40 ℃.The cooling temperature in described seed crystal district is 5 ℃.
In addition to the implementation, the present invention can also have other embodiments, and all employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop within the protection domain of requirement of the present invention.
Claims (10)
1. metal gallium longitudinal temperature gradient solidification purification apparatus, it is characterized in that described device comprises vitellarium, shouldering district, seed crystal district three parts, described vitellarium is one section cylindrical socket, described shouldering district is the inversed taper platform shape socket that is connected with lower end, described vitellarium, and described seed crystal district is the cylindrical blind pipe that is connected with lower end, described shouldering district.
2. a kind of metal gallium longitudinal temperature gradient solidification purification apparatus according to claim 1 is characterized in that described seed crystal district is provided with refrigerating unit.
3. a kind of metal gallium longitudinal temperature gradient solidification purification apparatus according to claim 2 is characterized in that described refrigerating unit is a cold dish.
4. a kind of metal gallium longitudinal temperature gradient solidification purification apparatus according to claim 1 is characterized in that described purifying plant has non-polar plastic to make.
5. a kind of metal gallium longitudinal temperature gradient solidification purification apparatus according to claim 4 is characterized in that described plastics are PE or Teflon or Nylon.
6. a kind of metal gallium longitudinal temperature gradient solidification purification apparatus according to claim 1 is characterized in that described vitellarium tube wall is provided with scale marks.
7. a metal gallium longitudinal temperature gradient solidification method of purification is characterized in that comprising the steps: the gallium seed crystal is put into described seed crystal district; The liquid metal gallium is injected described purifying plant; Cool off in the district to described seed crystal.
8. a kind of metal gallium longitudinal temperature gradient solidification method of purification according to claim 7 is characterized in that described seed crystal is a high-purity gallium.
9. a kind of metal gallium longitudinal temperature gradient solidification method of purification according to claim 7 is characterized in that described liquid metal gallium temperature is 35 ℃ to 40 ℃.
10. a kind of metal gallium longitudinal temperature gradient solidification method of purification according to claim 7, the cooling temperature that it is characterized in that described seed crystal district are 0 ℃-5 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNA2008101556870A CN101413068A (en) | 2008-10-29 | 2008-10-29 | Metal gallium longitudinal temperature gradient solidification purification apparatus and method |
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| CNA2008101556870A CN101413068A (en) | 2008-10-29 | 2008-10-29 | Metal gallium longitudinal temperature gradient solidification purification apparatus and method |
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| CN101413068A true CN101413068A (en) | 2009-04-22 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618735A (en) * | 2012-04-23 | 2012-08-01 | 南京金美镓业有限公司 | Method for removing impurity bismuth in metal gallium |
| CN102618734A (en) * | 2012-04-23 | 2012-08-01 | 南京金美镓业有限公司 | Large-scale production method for preparing high purity gallium |
| CN104711438A (en) * | 2013-12-17 | 2015-06-17 | 东北大学 | Method and apparatus for preparing high-purity gallium |
| CN106206841A (en) * | 2016-07-21 | 2016-12-07 | 江西德义半导体科技有限公司 | Gallium arsenide substrate material preparation method |
| CN107881347A (en) * | 2017-12-11 | 2018-04-06 | 清远先导材料有限公司 | A kind of method of purification of indium |
| RU212991U1 (en) * | 2021-08-30 | 2022-08-17 | Федеральное государственное бюджетное образовательное учреждение высшего образования «Российский химико-технологический университет имени Д.И. Менделеева» (РХТУ им. Д.И. Менделеева) | DEVICE FOR CLEANING SUBSTANCES BY THE METHOD OF NORMAL DIRECTIONAL CRYSTALLIZATION |
-
2008
- 2008-10-29 CN CNA2008101556870A patent/CN101413068A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618735A (en) * | 2012-04-23 | 2012-08-01 | 南京金美镓业有限公司 | Method for removing impurity bismuth in metal gallium |
| CN102618734A (en) * | 2012-04-23 | 2012-08-01 | 南京金美镓业有限公司 | Large-scale production method for preparing high purity gallium |
| CN102618735B (en) * | 2012-04-23 | 2013-05-08 | 南京金美镓业有限公司 | Method for removing impurity bismuth in metal gallium |
| CN102618734B (en) * | 2012-04-23 | 2013-06-12 | 南京金美镓业有限公司 | Large-scale production method for preparing high purity gallium |
| CN104711438A (en) * | 2013-12-17 | 2015-06-17 | 东北大学 | Method and apparatus for preparing high-purity gallium |
| CN106206841A (en) * | 2016-07-21 | 2016-12-07 | 江西德义半导体科技有限公司 | Gallium arsenide substrate material preparation method |
| CN107881347A (en) * | 2017-12-11 | 2018-04-06 | 清远先导材料有限公司 | A kind of method of purification of indium |
| RU212991U1 (en) * | 2021-08-30 | 2022-08-17 | Федеральное государственное бюджетное образовательное учреждение высшего образования «Российский химико-технологический университет имени Д.И. Менделеева» (РХТУ им. Д.И. Менделеева) | DEVICE FOR CLEANING SUBSTANCES BY THE METHOD OF NORMAL DIRECTIONAL CRYSTALLIZATION |
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Open date: 20090422 |