CN101404464B - Composite micro-energy resource system and method for producing the same - Google Patents
Composite micro-energy resource system and method for producing the same Download PDFInfo
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- CN101404464B CN101404464B CN2008100721086A CN200810072108A CN101404464B CN 101404464 B CN101404464 B CN 101404464B CN 2008100721086 A CN2008100721086 A CN 2008100721086A CN 200810072108 A CN200810072108 A CN 200810072108A CN 101404464 B CN101404464 B CN 101404464B
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Abstract
The invention provides a compound micro-energy system and a manufacturing method thereof, relating to a micro-energy system. The invention provides a compound micro-energy system that can effectively improve energy collecting efficiency and particularly is suitable for providing 'permanent' working energy source for a micro-system or micro-elements and a manufacturing method thereof. The system is provided with three substrates, two metal layers and a contact switch; the three substrates are of sandwich structure, being the first substrate, the second substrate and the third substrate from the bottom to up; and the lower surface of the second substrate is processed with PN junctions, the contact switch is arranged between the first substrate and the second substrate. On the basis of the isotope radiant energy collecting function of the PN junctions which are provided with regularly distributed three dimensional structures (deep hole arrays or pillar array), the system is integrated with the different work functions of metals to convert the static induction lability energy generated by Beta ray into electric energy, thus achieving the purpose of effectively improving the energy collecting efficiency.
Description
Technical field
The present invention relates to a kind of micro-energy resource system, especially relate to a kind of integrated with radioactive isotope radiant converting electrical energy and simultaneously with the miniature energy collection system and the corresponding preparation method of vibrational energy converting electrical energy, be particularly related to and utilize radioisotopic β ray to produce electric energy, and utilize the metal different work functions vibrational energy to be converted to the method for electric energy.
Background technology
The development of electronic technology direction is Highgrade integration and height miniaturization now.For compatible mutually,, system also must develop towards the direction of miniaturization for providing the energy resource system of power with the development trend of electron device.But miniaturization just means the energy that energy resource system provides and will reduce, and so just need find the energy with high-energy-density can satisfy the demand of system's miniaturization.The radiological performance origin system has very high energy density, meets the demand of this miniaturization fully.
And because the radioisotopic half life period is all very long, usually more than 10 years, so the radiological performance origin system can provide effective power steadily in the long term.U.S. scientist announces that a few days ago they have succeeded in developing a kind of novel isotope battery, is applied in the middle of the mobile phone, can continuous working more than 10 years.Isotope battery mainly is that the ray of emitting when utilizing the radioelement decay produces electric energy because of the extremely people's concern of its superpower endurance.The sixties in 20th century, the someone proposes to utilize structure such as PN junction to collect the ray that decay produces, and photovoltaic effect takes place in PN junction produce electric energy.
Some advantage of the radioactivity energy is realized already.Yet this technology is being updated, and the energy that wherein topmost focus direction is exactly the raising system is collected efficient.In nearest little radiological performance source technology development, energy is collected efficient in 0.7% to 2% scope.The isotope battery method of up-to-date proposition is to utilize tritium as operation material because Beta-ray energy is lower, penetration power a little less than, metal shell can be the sealing that reacts completely of the radioactivity tritium energy, this is that in daily life storage and application brought convenience.Because the β ray that gives off does not have orthotype, traditional PN junction can only be collected the radiation of a direction, and efficient is very low, causes the power density of battery very little, and the power density that therefore improves isotope battery is a key in application.
To this, people have expected finishing is carried out on the PN junction surface.Research group of the U.S. transforms at the semiconductor surface that thermoelectricity is collected, and directly adopts anodic oxidation to carry out the deep hole etching on P type silicon, utilizes diffusion technique to form PN junction again.Because the increase of surface area, but and the β ray of the radiation of the tritium in the sucking, therefore efficient is obviously improved, reach usage level.In addition, application number is that 200610147533.8 Chinese invention patent application improves this technology, and it graphically designs on the basis of silicon face etching, and the deep hole systematicness is arranged, and can reduce the puncture rate of PN junction like this.
Scrutinize discovery, above design all is directly to collect the directly electric energy of conversion of isotopic β ray, in fact electric energy is isotope brings energy to environment in decay process a sub-fraction, utilize structural design, not only this part electric energy directly can be collected, other energy conversion that the isotope decay can also be produced become electric energy to collect, for example the electrostatic attraction effect of the charged character generation of β particle itself.The structure of compound collection can be got up the isotope collection of energy as much as possible, improves the efficient of whole energy resource system.
Summary of the invention
The object of the present invention is to provide a kind of energy that can improve effectively to collect efficient, being specially adapted to provides composite micro-energy resource system of " permanent " work energy and preparation method thereof for micro-system or micro element.
Technical scheme of the present invention is to collect on the basis of isotope radiation energy at the PN junction with three-dimensional structure (deep hole array or column type array) with regular distribution, integrated utilization metal different work functions is converted to electric energy with the electrostatic induction vibrational energy that the β ray produces in system, reaches the purpose that effective raising energy is collected efficient.
Composite micro-energy resource system of the present invention is provided with 3 substrates, shaker arm, the 1st metal level, the 2nd metal level and contact-making switch, 3 substrate stacks become sandwich structure, be followed successively by the 1st substrate, the 2nd substrate and the 3rd substrate from bottom to up, be used to place the isotope radioactive source on the 1st substrate and as the bottom package of system; The 2nd substrate places the 1st substrate top, process oscillating mass piece and shaker arm at the 2nd substrate, the 1st layer metal deposition is at the upper surface of the 2nd substrate, the 1st metal level is to utilize the work function principle vibrational energy to be converted to a utmost point of the electric capacity of electric energy, process the semiconductor PN of three-dimensional structure at the 2nd substrate lower surface, be used to collect the Beta-ray electronics of isotope, and radiation energy is converted to electric energy, collect by PN junction electricity collection electric capacity; The 2nd layer metal deposition is at the 3rd substrate lower surface, and the 2nd metal level is to utilize the work function principle vibrational energy to be converted to the other utmost point of the electric capacity of electric energy, and as the top encapsulation of system; Contact-making switch is located between the 1st substrate and the 2nd substrate, contact-making switch is used to guarantee because the 1st substrate and the 2nd substrate that static attracts each other can not stop mutual motion: when collecting β ray electronics to certain electric weight, the 2nd substrate and the 1st substrate are when connecting contact-making switch, xenogenesis electric charge between the 1st substrate and the 2nd substrate is collected electric capacity to the β electrical power and is charged, electric charge reduces reduces electrostatic attraction, the 2nd substrate will enter next vibration cycles, and contact-making switch disconnects.The respectively external vibrational energy of the 1st metal level and the 2nd metal level is collected the electric capacity two ends, and three-dimensional PN junction and shaker arm be external PN junction electricity collection electric capacity two ends respectively, and the respectively external β electrical power of an end of contact-making switch and isotope radioactive source is collected the electric capacity two ends.
Substrate can be silicon chip or glass sheet.
The preparation method of composite micro-energy resource system of the present invention may further comprise the steps:
1) gets the substrate of a slice single-sided polishing as the 1st substrate, groove of corrosion processing on the 1st substrate, at the Beta-ray isotope layer of groove surfaces deposition radiation, the thickness that radiates Beta-ray isotope layer arrives several microns for the hundreds of nanometer, and between recess edge and the 1st substrate surface, deposit the good conductor metal, as a utmost point of contact electrode;
2) substrate of getting a slice twin polishing is made into three-dimensional structure as the 2nd substrate with the 2nd substrate one surface, and surface working is become circular hole or cylindrical-array, and the thickness of the 2nd substrate is greater than 400 μ m;
3) form PN junction layer on the three-dimensional structure surface: a side that has three-dimensional structure at the 2nd substrate is made PN junction, and junction depth is the average depth of penetration of isotope in semiconductor;
4) deposit good conductive metal in the marginal portion that the 2nd substrate has a three-dimensional structure, as another utmost point of contact electrode;
5) at the backside deposition thickness of the three-dimensional PN junction of the 2nd substrate aluminium lamination or platinum layer, as utilizing the work function principle vibrational energy to be converted to a pole plate of the electric capacity of electric energy greater than 200nm;
6) edge of the 2nd substrate is processed into cantilever shape near the part of bonding, with middle the three-dimensional structure of the 2nd substrate partly as the oscillating mass piece;
7) deposition platinum layer or aluminium lamination on the 3rd substrate are as utilizing the work function principle vibrational energy to be converted to another utmost point of the electric capacity of electric energy;
8) encapsulation of entire system structure: support with bonded silica between the 2nd substrate and the 3rd substrate, erode away groove, make the displacement of vibrational structure that any part of the 2nd substrate and the 3rd on-chip metal level can not be come in contact at the 3rd substrate;
9) 3 pairs of contact conductors of preparation, 3 pairs of contact conductors are plugged into and are being collected on the electric capacity, and the 1st pair of electrode connects contact-making switch and isotope radioactive source respectively, and the electric current collection electric energy that utilizes contact discharge to cause is collected electric capacity by the β electrical power and is collected; The 2nd pair of contact conductor is located at the PN junction both sides of the 2nd substrate, utilizes Beta-ray volta effect to produce electric energy, collects by PN junction electricity collection electric capacity; The 3rd pair of electrode is located between the 2nd on-chip metal level and the 3rd on-chip metal level, utilizes the vibration of different work functions metal capacitance pole plate, collects electric capacity by vibrational energy and collects vibrational energy;
10) design of contact-making switch on the shaker arm: between the three-dimensional PN junction face of the 1st substrate and the 2nd substrate, establish contact-making switch.
In step 1), corrosion processing can adopt wet chemical, and the surface area of groove is more preferably greater than 1cm * 1cm, and the degree of depth of groove is preferably 1～50 μ m, and good conductive metal can adopt gold, aluminium or copper etc., radiates Beta-ray isotope and can adopt Ni
63Deng.
In step 2) in, the surface area of three-dimensional structure can be 1cm * 1cm, and the radius of circular hole or cylinder is less than 10 μ m, and density is greater than 1/10 μ m
2
In step 3), make the method for PN junction and can utilize methods such as film growth, surface diffusion or ion injection.
In step 4), good conductive metal can adopt gold, aluminium or copper etc.
In step 5), deposition can adopt method depositions such as electroless plating, sputter.
In step 6), the shape that the edge of the 2nd substrate is made into cantilever near the part of bonding can adopt the method for etching.
In step 7), deposition can adopt method depositions such as electroless plating, sputter, the thickness of platinum layer or aluminium lamination is greater than 200nm, utilize different metal to have different work functions and make and form voltage between the 2nd substrate and the 3rd substrate, when the 3rd collected that sustaining voltage is constant between the electric capacity two-plate, the vibration of the 2nd substrate made the capacitance variations that causes between the 2nd substrate and the 3rd substrate, made to produce electric current in the circuit, vibrational energy is collected the electric capacity charging, vibration mechanical energy is converted into electric energy.
In step 10), because the β particle itself is exactly a high energy electron, it is charged that radiation exposure makes it on silicon chip, the electrostatic attraction that produces between the 1st substrate and the 2nd substrate, when distance between the 1st substrate and the 2nd substrate is moderate, switch connection discharges, electrostatic attraction disappears, thereby the 2nd substrate is rebounded, cause vibration, the two poles of the earth of contact-making switch can deposit the good conductive metal (for example gold or copper etc.) of 1 μ m left and right thickness, utilize the 1st substrate make contact-making switch two ends distances be between the 1st substrate and the 2nd substrate distance about 1/3.
The present invention has following outstanding advantage: utilize the isotope emittance as intelligence-collecting object, because the half life period of isotope overlength (going up century-old) makes this system have the feature of " forever " energy; Multipath for the isotope emittance is collected, comprise the electric weight collection that the volta effect of β ray in PN junction produces, because Beta-ray charging property causes the vibrational energy that electrostatic attraction produces, the electric weight of β ray itself, this compound collection system can more effectively be utilized emittance, improve collection efficiency, improve the power density of energy resource system on the whole; The entire system size is less, can be integrated in the electronic component fully, adapts to the growth requirement in fields such as following wireless network, Long-distance Control.
Description of drawings
Fig. 1 is the side sectional structure synoptic diagram of the described composite micro-energy resource system of the embodiment of the invention.
Embodiment
As shown in Figure 1, composite micro-energy resource system of the present invention is provided with 3 substrates 1～3, shaker arm the 4, the 1st metal level the 5, the 2nd metal level 6 and contact- making switch 10,3 substrate 1～3 stacks become sandwich structure, be followed successively by from bottom to up and be used to place isotope radioactive source 12 on the 1st substrate the 1, the 2nd substrate 2 and the 3rd substrate 3, the 1 substrates 1 and as the bottom package of system; The 2nd substrate 2 places the 1st substrate 1 top, process the oscillating mass piece at the 2nd substrate 2, the 1st metal level 5 is deposited on the upper surface of the 2nd substrate 2, the 1st metal level 5 utilizes the work function principle vibrational energy to be converted to a utmost point of the electric capacity of electric energy, process the semiconductor PN 11 of three-dimensional structure at the 2nd substrate 2 lower surfaces, be used to collect the Beta-ray electronics of isotope, and radiation energy is converted to electric energy, collect by PN junction 11 electricity collection electric capacity 8; The 2nd metal level 6 is deposited on the 3rd substrate 3 lower surfaces, and the 2nd metal level 6 is to utilize the work function principle vibrational energy to be converted to the other utmost point of the electric capacity of electric energy, and as the top encapsulation of system; Contact-making switch 10 is located between the 1st substrate 1 and the 2nd substrate 2, contact-making switch 10 is used to guarantee because the 1st substrate 1 and the 2nd substrate 2 that static attracts each other can not stop mutual motion: when collecting β ray electronics to certain electric weight, the 2nd substrate 2 and the 1st substrate 1 are when connecting contact-making switch 10, xenogenesis electric charge between the 1st substrate 1 and the 2nd substrate 2 is collected electric capacity to the β electrical power and is charged, electric charge reduces reduces electrostatic attraction, the 2nd substrate 2 will enter next vibration cycles, and contact-making switch 10 disconnects.The 1st metal level 5 and the 2nd metal level 6 respectively external vibrational energies are collected electric capacity 7 two ends, three-dimensional PN junction 11 and shaker arm 4 be external PN junction electricity collection electric capacity 8 two ends respectively, and an end of contact-making switch 10 and isotope radioactive source 12 respectively external β electrical power are collected electric capacity 9 two ends.3 substrates are with silicon chip or glass sheet.
Below provide the embodiment of preparation composite micro-energy resource system.
1) get the silicon chip of a slice single-sided polishing, area is 1cm * 1cm, and the method for utilizing electroless plating is at the Beta-ray isotope Ni of polished surface deposition radiation
63, thickness is 1 μ m, this is as the 1st silicon chip;
2) get the silicon chip of a slice twin polishing, thickness is 450 μ m, and area is 1cm * 1cm, earlier will one side spin coating photoresist SU8, and glue spreader rotating speed 2500/min, glue is thick to be 2 μ m, this is as the 2nd silicon chip;
3) with the ultraviolet photolithographic machine gluing silicon chip is carried out graph exposure, figure is the circular hole of the radius 2 μ m of rectangular arranged, adjacent circular holes centre distance 5 μ m;
4) utilize reaction ion deep etching machine engraving erosion to have the silicon chip of photoresist figure, photoresist is as etch mask, 100 watts of etching power, etching time 30min, etching depth 10 μ m;
5) silicon slice placed of then etching being crossed is carried out auxiliary cleaning of ultrasound wave and is removed photoresist in the mixed solution of acetone and alcohol;
6) utilize ion to inject phosphorus in the one side with three-dimensional surface structure and form PN junction layer, junction depth is 1 μ m;
7) in the back side one side of the three-dimensional PN junction of the 2nd silicon chip, utilize the aluminium of magnetically controlled sputter method deposit thickness, as utilizing the work function principle vibrational energy to be converted to a utmost point of electric energy greater than 200nm;
8) with the way of etching the edge of the 2nd silicon chip is made into the shape of cantilever near the part of bonding, cantilever width 5 μ m, thickness 10 μ m, length 50 μ m, there are two cantilevers on each limit, four limits;
9) get the silicon chip of a slice single-sided polishing, area is 1cm * 1cm, use electroless plating on the 3rd silicon chip, the platinum of method deposit thickness 200nm such as sputter, as utilizing the work function principle vibrational energy to be converted to another utmost point of electric energy, utilize different metal to have different work functions and make and form voltage between the 2nd silicon chip and the 3rd silicon chip, when sustaining voltage is constant between collection electric capacity two-plate, the vibration of the 2nd silicon chip makes the capacitance variations that causes between the 2nd silicon chip and the 3rd silicon chip, make and produce electric current in the circuit, to collecting the electric capacity charging, vibration mechanical energy is converted into electric energy;
10) making of contact conductor: need altogether three pairs of contact conductors to plug into and collecting on the electric capacity, electrode is with the thick gold of 100nm: first pair connects contact-making switch and isotope source respectively, and the electric current collection electric energy that utilizes contact discharge to cause is by collecting the electric capacity collection; Second pair in the PN junction both sides of the 2nd silicon chip, utilize Beta-ray volta effect to produce electric energy, collect by collecting electric capacity; The 3rd pair of platinum layer on the aluminum metal layer on the 2nd silicon chip and the 3rd silicon chip utilizes the vibration of different work functions metal capacitance pole plate to collect electric energy;
11) system in package: close the 1st silicon chip and the 2nd silicon chip with the bonding switch earlier, isotope layer is wanted the corresponding three-dimensional PN junction layer, spacing between three-dimensional PN junction layer and the isotope layer is regulated by the degree of depth of the groove that erodes away on the 1st silicon chip, all encapsulation processs must be carried out under the certain vacuum condition, can effectively reduce air damping, reduce energy loss, and will reserve contact conductor;
12) support with bonded silica between the 2nd substrate and the 3rd substrate, the spacing that has between the two-plate of metal capacitance of different work functions is regulated by the degree of depth of the groove that erodes away on the 3rd silicon chip, the displacement that require to guarantee vibrational structure can not make any part of the metal level on the 2nd silicon chip and the 3rd silicon chip come in contact, after encapsulation finishes, form whole little energy collection system.
Claims (9)
1. composite micro-energy resource system, it is characterized in that being provided with 3 substrates, shaker arm, the 1st metal level, the 2nd metal level and contact-making switch, 3 substrate stacks become sandwich structure, be followed successively by the 1st substrate, the 2nd substrate and the 3rd substrate from bottom to up, be used to place the isotope radioactive source on the 1st substrate and as the bottom package of system; The 2nd substrate places the 1st substrate top, process oscillating mass piece and shaker arm at the 2nd substrate, the 1st layer metal deposition is at the upper surface of the 2nd substrate, the 1st metal level is to utilize the work function principle vibrational energy to be converted to the utmost point of the electric capacity of electric energy, processes the semiconductor PN of three-dimensional structure at the 2nd substrate lower surface; The 2nd layer metal deposition is at the 3rd substrate lower surface, and the 2nd metal level is to utilize the work function principle vibrational energy to be converted to an other utmost point of the electric capacity of electric energy; Contact-making switch is located between the 1st substrate and the 2nd substrate, the respectively external vibrational energy of the 1st metal level and the 2nd metal level is collected the electric capacity two ends, three-dimensional PN junction and shaker arm be external PN junction electricity collection electric capacity two ends respectively, and the respectively external β electrical power of an end of contact-making switch and isotope radioactive source is collected the electric capacity two ends.
2. composite micro-energy resource system as claimed in claim 1 is characterized in that substrate is silicon chip or glass sheet.
3. the preparation method of composite micro-energy resource system as claimed in claim 1 is characterized in that may further comprise the steps:
1) gets the substrate of a slice single-sided polishing as the 1st substrate, groove of corrosion processing on the 1st substrate, at the Beta-ray isotope layer of groove surfaces deposition radiation, the thickness that radiates Beta-ray isotope layer arrives several microns for the hundreds of nanometer, and between recess edge and the 1st substrate surface, deposit the good conductor metal, as a utmost point of contact electrode;
2) substrate of getting a slice twin polishing is made into three-dimensional structure as the 2nd substrate with the 2nd substrate one surface, and surface working is become circular hole or cylindrical-array, and the thickness of the 2nd substrate is greater than 400 μ m;
3) form PN junction layer on the three-dimensional structure surface: a side that has three-dimensional structure at the 2nd substrate is made PN junction, and junction depth is the average depth of penetration of isotope in semiconductor;
4) deposit good conductive metal in the marginal portion that the 2nd substrate has a three-dimensional structure, as another utmost point of contact electrode;
5) at the backside deposition thickness of the three-dimensional PN junction of the 2nd substrate aluminium lamination or platinum layer, as utilizing the work function principle vibrational energy to be converted to a pole plate of the electric capacity of electric energy greater than 200nm;
6) edge of the 2nd substrate is processed into cantilever shape near the part of bonding, with middle the three-dimensional structure of the 2nd substrate partly as the oscillating mass piece;
7) deposition platinum layer or aluminium lamination on the 3rd substrate are as utilizing the work function principle vibrational energy to be converted to another utmost point of the electric capacity of electric energy;
8) encapsulation of entire system structure: support with bonded silica between the 2nd substrate and the 3rd substrate, erode away groove, make the displacement of vibrational structure that any part of the 2nd substrate and the 3rd on-chip metal level can not be come in contact at the 3rd substrate;
9) 3 pairs of contact conductors of preparation, 3 pairs of contact conductors are plugged into and are being collected on the electric capacity, and the 1st pair of electrode connects contact-making switch and isotope radioactive source respectively, and the electric current collection electric energy that utilizes contact discharge to cause is collected electric capacity by the β electrical power and is collected; The 2nd pair of contact conductor is located at the PN junction both sides of the 2nd substrate, utilizes Beta-ray volta effect to produce electric energy, collects by PN junction electricity collection electric capacity; The 3rd pair of electrode is located between the 2nd on-chip metal level and the 3rd on-chip metal level, utilizes the vibration of different work functions metal capacitance pole plate, collects electric capacity by vibrational energy and collects vibrational energy;
10) design of contact-making switch on the shaker arm: between the three-dimensional PN junction face of the 1st substrate and the 2nd substrate, establish contact-making switch.
4. the preparation method of composite micro-energy resource system as claimed in claim 3 is characterized in that in step 1), and the surface area of groove is greater than 1cm * 1cm, and the degree of depth of groove is 1～50 μ m.
5. the preparation method of composite micro-energy resource system as claimed in claim 3 is characterized in that in step 2) in, the surface area of three-dimensional structure is 1cm * 1cm, and the radius of circular hole or cylinder is less than 10 μ m, and the quantity of described circular hole or cylinder is greater than 0.1/μ m
2
6. the preparation method of composite micro-energy resource system as claimed in claim 3 is characterized in that in step 7), and the thickness of platinum layer or aluminium lamination is greater than 200nm.
7. the preparation method of composite micro-energy resource system as claimed in claim 3 is characterized in that in step 10), and the two poles of the earth of contact-making switch deposit the good conductive metal of 1 μ m thickness.
8. the preparation method of composite micro-energy resource system as claimed in claim 3 is characterized in that in step 10), utilize the 1st substrate make contact-making switch two ends distances be between the 1st substrate and the 2nd substrate distance 1/3.
9. as the preparation method of claim 3 or 7 described composite micro-energy resource systems, it is characterized in that described good conductive metal is gold, aluminium or copper.
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| CN102543239B (en) * | 2012-01-09 | 2014-04-16 | 北京大学 | Three-dimensional heterojunction isotope battery based on carbon nanotube film and preparation method of three-dimensional heterojunction isotope battery |
| CN105337528B (en) * | 2014-08-14 | 2018-05-25 | 北京纳米能源与系统研究所 | A kind of method for improving friction generator output intensity |
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