CN101404214A - Polymer solid sheet type tantalum electrolyte capacitor and its manufacturing method - Google Patents
Polymer solid sheet type tantalum electrolyte capacitor and its manufacturing method Download PDFInfo
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- CN101404214A CN101404214A CNA200810226399XA CN200810226399A CN101404214A CN 101404214 A CN101404214 A CN 101404214A CN A200810226399X A CNA200810226399X A CN A200810226399XA CN 200810226399 A CN200810226399 A CN 200810226399A CN 101404214 A CN101404214 A CN 101404214A
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Abstract
The invention discloses a polymer solid chip Ta electrolytic capacitor and a preparation method thereof; wherein, the capacitor comprises Ta capacitor grains which are arranged in an encapsulation shell; the Ta capacitor grain consists of a Ta anode with a Ta eduction wire, a medium layer and a polymer cathode layer; the Ta anode is covered by the medium layer which is covered by the polymer cathode layer, the high-frequency conductivity of which is 20S/cm; the Ta eduction wire of the Ta anode is electrically connected with the anode eduction wire of the encapsulation shell; the polymer cathode layer is electrically connected with the cathode eduction wire of the encapsulation shell; the Ta electrolytic capacitor takes a 3, 4-ethylene dioxythiophene PEDT layer as the cathode so as to lead the cathode resistance of the Ta electrolytic capacitor to be reduced by one magnitude compared with the MnO2 cathode and to improve the working frequency by 1-2 magnitude; the Ta electrolytic capacitor has excellent high-frequency performance, effectively improves the safety, and generates no combustion or explosion as the products which take the MnO2 as the cathode when accidental breakdown occurs during the usage process.
Description
Technical field
The present invention relates to the electronic devices and components field, relate in particular to a kind of polymer solid sheet type tantalum electrolyte capacitor and manufacture method thereof.
Background technology
The impedance of capacitor is higher, particularly high-frequency resistance is higher, can make the induction reactance of capacitor also higher, and the inductance of capacitor and impedance meeting become capacitive reactance with the increase of frequency, cause capacitor volume to descend, cause this capacitor to keep certain capacity in higher frequency.This capacitor can't be applied in the high-frequency circuit, if can occur when using in the higher circuit of frequency condenser capacity with frequency increase and the phenomenon that descends.
Just there is above-mentioned shortcoming in the tantalum electrolytic capacitor that is applied in excellent performance in the multiple circuit, there are relation as shown in Figure 1 in the capacity of tantalum electrolytic capacitor and test or frequency of utilization: promptly when testing or frequency of utilization when being increased to certain value, the capacity of tantalum electrolytic capacitor can reduce with the increase of frequency, when frequency is increased to resonance frequency with tantalum electrolytic capacitor when the same, the capacity of tantalum electrolytic capacitor will be lost, and become an inductance.
Cause the reason of this phenomenon of tantalum electrolytic capacitor to be: common sheet type tantalum electrolyte capacitor negative electrode adopts the semi-conducting material manganese dioxide of electronic conductance type, make the cathode impedance of sheet type tantalum electrolyte capacitor bigger, and then make tantalum electrolytic capacitor inductance and impedance meeting become capacitive reactance with the increase of frequency, cause the capacity of tantalum electrolytic capacitor to descend, and prior art can't make the high-frequency resistance of tantalum electrolytic capacitor lower by the technology processing again, make the sheet type tantalum electrolyte capacitor of excellent performance higher because of high-frequency resistance [ESR], frequency of utilization is subjected to strict restriction, almost can't use in the circuit more than operating frequency reaches the MHZ level.But because the development of microelectric technique is very fast, the main operating frequency of common processor all might reach more than the MHZ in the existing microelectronic circuit, carrying out the complicated digital circuit of logical operation, operating frequency is higher, and therefore the sheet type tantalum electrolyte capacitor that uses manganese dioxide to make negative electrode can not be used in this type of circuit substantially and use as filter element.This shortcoming of tantalum electrolytic capacitor has limited the range of application of sheet type tantalum electrolyte capacitor greatly.
Summary of the invention
Based on above-mentioned existing in prior technology problem, embodiment of the present invention provides a kind of polymer solid sheet type tantalum electrolyte capacitor and manufacture method thereof, hang down material as the tantalum electrolytic capacitor cathode material with high-frequency resistance, make tantalum electrolytic capacitor avoid causing capacity to diminish, can be applicable in the higher circuit of multiple frequency because of frequency is high.
The objective of the invention is to be achieved through the following technical solutions:
Embodiment of the present invention provides a kind of polymer solid sheet type tantalum electrolyte capacitor, comprising:
In package casing, be provided with tantalum electric capacity particle, described tantalum electric capacity particle is made of tantalum piece anode, dielectric layer and the polymer cathode layer of band tantalum wire lead-out wire, tantalum piece anode coats dielectric layer outward, dielectric layer coats polymer cathode layer outward, the high-frequency electrical conductance of polymer cathode layer is 20S/cm, the tantalum wire lead-out wire of described tantalum piece anode is electrically connected with the anode lead wire of package casing, and polymer cathode layer is electrically connected with the cathode terminal of encapsulating housing.
Described polymer cathode layer is the clad structure layer that 3,4 ethene dioxythiophene PEDT materials form.
The thickness of the clad structure layer that described 3,4 ethene dioxythiophene PEDT materials form is 0.2～0.3 millimeter.
Embodiment of the present invention provides a kind of manufacture method of polymer solid sheet type tantalum electrolyte capacitor, comprising:
A. will be the briquet of the band tantalum wire lead-out wire of raw material compacting with the tantalum powder, after vacuum-sintering,, on the anode briquet behind the sintering, form dielectric layer as the anode briquet;
B. with 3,4 vinyl monomer n-butanols and p-methyl benzenesulfonic acid ferrous solution are mixed with mixed solution by 1: 4～6 mass ratio, described briquet is immersed in the mixed solution of being prepared, and forming thickness at the briquet surface aggregate is that 0.2～0.3 millimeter 3,4 ethene dioxythiophene PEDT layers are as negative electrode;
C. briquet surface impregnation graphite, the silver slurry layer of polymerization formation negative electrode are drawn layer as negative electrode, the tantalum wire lead-out wire and the negative electrode of described briquet are drawn on layer anode lead wire and cathode terminal of the metal framework that is bonded to encapsulating housing respectively, promptly obtain polymer solid sheet type tantalum electrolyte capacitor behind the plastic packaging.
Described step a specifically comprises:
The tantalum powder that with specific volume is 8000-50000uF.V/g is pressed into the briquet of band tantalum wire lead-out wire by the pressed density of 5.0-6.5, obtains the anode briquet after carrying out vacuum high-temperature sintering under 1400～1800 ℃ of temperature, the vacuum degree 5 * 0.0004Pa condition;
With the described anode briquet behind the sintering, in the nitric acid electrolytic solution of 0.1-0.5%, the direct voltage that adopts 12-60V with electrochemical process forms dielectric layer as forming voltage under the current density of 60-100 milliampere/gram.
Described step b specifically comprises:
B1. according to ratio preparation 3, the 4 vinyl monomer n-butanols of mass ratio 1: 4～6 and the mixed solution of p-methyl benzenesulfonic acid ferrous solution;
B2. stop after 2～5 minutes in the mixed solution that the described briquet immersion step b1 that obtains among the step a is prepared and take out;
B3. the described briquet polymerization at room temperature after will taking out 10～60 minutes, polymerization is 20 minutes under 50～150 ℃ of temperature;
B4. the briquet after the polymerization among the above-mentioned steps b3 is cleaned in the deionized water of 20～30 ℃ of temperature after 30 minutes and take out;
B5. under 120～150 ℃ of temperature, dried 10～30 minutes;
B6. 50～70% the direct voltage that uses among the step a dc voltage value when forming dielectric layer on the anode briquet is as forming voltage, mends in mass ratio is 2～3% p-methyl benzenesulfonic acid solution and forms 20 minutes;
B7. after step b6 mends formation, under 120～150 ℃ of temperature, dried 10～30 minutes;
Repeat above-mentioned steps b2～b7, the dielectric layer surface forms 3,4 ethene dioxythiophene PEDT layers of 0.2～0.3 millimeters thick as negative electrode outside described anode briquet.
Described step c specifically comprises:
C1. in above-mentioned steps b the polymerization briquet surface impregnation solids content that forms negative electrode be behind 2～10% the graphite, in the oven dry 10～30 minutes down of 130～150 ℃ of temperature;
C2. flood conductive polymer silver slurry after and draw layer, dried 10～30 minutes down for 150～200 ℃ in temperature as negative electrode;
C3. will flood the tantalum wire lead-out wire of the briquet after conductive polymer silver is starched, be bonded to form on the anode lead wire of metal framework of encapsulating housing and be electrically connected, negative electrode is drawn formation electrical connection on layer cathode terminal of the metal framework that bonds to encapsulating housing, under 150 ℃ of temperature, dried 10～30 fens;
C4. use the mold apparatus corresponding that product is carried out the case pres-sure encapsulation, promptly obtain polymer solid sheet type tantalum electrolyte capacitor with encapsulating housing.
Described 3,4 vinyl monomer n-butanols be by 3,4 ethene dioxythiophenes of unimolecule attitude and n-butanol by 1: the mass ratio of 1-5 mixes the mixture that forms.
The technical scheme that is provided by the invention described above execution mode as can be seen, embodiment of the present invention is with 3,4 ethene dioxythiophene PEDT layers are as the negative electrode of tantalum electrolytic capacitor, the cathode impedance that makes tantalum electrolytic capacitor is high-frequency resistance especially, the tantalum electrolytic capacitor that can compare manganese dioxide cathodes reduces an order of magnitude, make the operating frequency of this tantalum electrolytic capacitor also can improve one to two order of magnitude, has outstanding high frequency performance, can be applied in the above circuit of MHz, and also effectively improved the fail safe of tantalum electrolytic capacitor, when in this tantalum electrolytic capacitor with macromolecule negative electrode uses, unexpected the puncture occurring, can catching fire or blast as manganese dioxide is made the product of negative electrode.
Description of drawings
Fig. 1 changes schematic diagram for the frequency capability of the tantalum electrolytic capacitor that existing manganese dioxide is negative electrode;
Fig. 2 is the structural formula figure of negative electrode 3, the 4 ethene dioxythiophene materials in the embodiment of the invention;
Fig. 3 is the inner encapsulating structure schematic diagram of the tantalum electrolytic capacitor of the embodiment of the invention;
Fig. 4 is the interior tantalum electric capacity particle cross-sectional view of tantalum electrolytic capacitor of the embodiment of the invention;
Fig. 5 is the tantalum electrolytic capacitor manufacturing process schematic diagram of the embodiment of the invention;
Among the figure: 1. encapsulating housing; 2. cathode terminal; 3. tantalum electric capacity particle; 4. anode lead wire; 5. tantalum wire lead-out wire; 6. pad; 21. tantalum piece anode; 22. dielectric layer; 23. polymer cathode layer.
Embodiment
Embodiment of the present invention provides a kind of polymer solid sheet type tantalum electrolyte capacitor and manufacture method thereof, be to be anode with the tantalum piece, polymerization forms 3 on the dielectric layer of tantalum piece anode, 4 ethene dioxythiophene PEDT layers are as the macromolecule negative electrode, and the encapsulation back forms the solid sheet type tantalum electrolyte capacitor with macromolecule negative electrode.Because 3, the excellent low impedance at high frequency characteristic of 4 ethene dioxythiophene PEDT materials, make the high-frequency resistance of this tantalum electrolytic capacitor can improve one to two order of magnitude with comparing with the tantalum electrolytic capacitor of manganese dioxide cathodes, can be used in the higher circuit of frequency, can not cause the reduction of tantalum electrolytic capacitor capacity because of the raising of place channel frequency.And in that this tantalum electrolytic capacitor is unexpected when puncturing, can catching fire or blast, fail safe is higher.
Understanding for ease of to the embodiment of the invention is described further below in conjunction with accompanying drawing.
Embodiment one
Present embodiment provides a kind of polymer solid sheet type tantalum electrolyte capacitor, and this tantalum electrolytic capacitor is a negative electrode with the macromolecule conducting material, effectively reduces the high-frequency resistance of tantalum electrolytic capacitor, and as shown in Figure 3, Figure 4, this tantalum electrolytic capacitor specifically comprises:
In the encapsulating housing 1 of epoxy resin, be provided with tantalum electric capacity particle 3, this tantalum electric capacity particle 3 is by the tantalum piece anode 21 of band tantalum wire lead-out wire 5, dielectric layer 22 and polymer cathode layer 23 constitute, the tantalum piece anode 21 outer dielectric layers 22 that coat, the dielectric layer 22 outer polymer cathode layer 23 that coat, polymer cathode layer 23 is by polythiophene material (3,4 ethene dioxythiophenes, the English PEDT that is called for short, the concrete structure formula is referring to Fig. 2) polymerization forms on the dielectric layer 22 outside tantalum piece anode 21 structure sheaf, the thickness of this structure sheaf is generally 0.2～0.3 millimeter, the high-frequency electrical conductance of the polythiophene material polymer cathode layer that forms is 20S/cm, the tantalum wire lead-out wire 5 of the tantalum piece anode 21 of tantalum electric capacity particle 3 is electrically connected (generally by pad 6 tantalum wire lead-out wire 5 being welded on the anode lead wire 7) with the anode lead wire 7 of epoxy encapsulation housing 1, polymer cathode layer 23 is electrically connected with the cathode terminal 2 of epoxy encapsulation housing 1, so just forms the solid sheet type tantalum electrolyte capacitor with conductive polymer negative electrode.
When above-mentioned polymer solid sheet type tantalum electrolyte capacitor is specifically made,, undertaken, specifically comprise by following step referring to Fig. 5:
A. will be the briquet of the band tantalum wire lead-out wire of raw material compacting with the tantalum powder, after vacuum-sintering,, on the anode briquet behind the sintering, form dielectric layer as the anode briquet;
In the reality, above-mentioned steps a specifically comprises: be the tantalum powder of 8000-50000uF.V/g is pressed into band tantalum wire lead-out wire by 5.0～6.5 pressed density briquet with specific volume, 1400～1800 ℃ of temperature, carry out under vacuum degree 5 * 0.0004Pa condition obtaining the anode briquet behind the vacuum high-temperature sintering;
With the described anode briquet behind the sintering, in the salpeter solution of 0.1-0.5%, adopt the direct voltage of 12-60V, the current density of 60～100 milliamperes/gram to carry out dielectric layer formation on the surface of anode briquet;
B. with 3,4 vinyl monomer n-butanols and p-methyl benzenesulfonic acid ferrous solution close than compounding by 1: 4～6 quality and make mixed solution, the briquet that forms dielectric layer among the step a is immersed in the mixed solution of making, forms 3,4 ethene dioxythiophene PEDT layers as the macromolecule negative electrode at the briquet surface aggregate; Wherein, 3,4 vinyl monomer n-butanols be by 3,4 ethene dioxythiophenes of unimolecule attitude and n-butanol press 1: the 1-5 mass ratio mixes the mixture that forms.
In the reality, above-mentioned steps b is specifically undertaken by following step:
B1. according to ratio preparation 3, the 4 vinyl monomer n-butanols of mass ratio 1: 4～6 and the mixed solution of p-methyl benzenesulfonic acid ferrous solution;
B2. the briquet of the formation dielectric layer that obtains among the step a is immersed in to stop after 2～5 minutes in the mixed solution of step b1 preparation and takes out;
B3. the briquet polymerization at room temperature after will taking out 10～60 minutes, polymerization is 20 minutes under 50～150 ℃ of temperature;
B4. the briquet after the polymerization among the above-mentioned steps b 3 is cleaned in the deionized water of 20～30 ℃ of temperature after 30 minutes and take out;
B5. under 120～150 ℃ of temperature, dried 10～30 minutes;
B6. use among the step a 50～70% direct voltage that the direct current of the 12-60V that uses when forming dielectric layer on anode briquet surface forms voltage as forming voltage, in mass ratio is 2～3% p-methyl benzenesulfonic acid solution, mend and form 20 minutes; Mending to form to handle to make the tantalum electrolytic capacitor of formation significantly reduce leakage current;
B7. after the benefit of step b6 forms, under 120～150 ℃ of temperature, dried once more 10～30 minutes;
Repeat above-mentioned steps b2～b7, form 3,4 ethene dioxythiophene PEDT layers of 0.2～0.3 millimeters thick as the macromolecule negative electrode up to the briquet surface that forms dielectric layer; In the reality, repeat 4～6 times above-mentioned steps b2～b7, can make 3,4 ethene dioxythiophene PEDT layer negative electrode reach 0.2～0.3 millimeter thickness;
C. briquet surface impregnation graphite, the silver slurry layer of polymerization formation macromolecule negative electrode are drawn layer as negative electrode, the tantalum wire lead-out wire and the negative electrode of described briquet are drawn on layer anode lead wire and cathode terminal of the metal framework that is bonded to encapsulating housing respectively, promptly obtain having the solid sheet type tantalum electrolyte capacitor of macromolecule negative electrode behind the plastic packaging;
In the reality, step c specifically comprises:
C1. in above-mentioned steps b the polymerization briquet surface impregnation solids content that forms the macromolecule negative electrode be behind 2～10% the graphite, in the oven dry 10～30 minutes down of 130～150 ℃ of temperature;
C2. flood conductive polymer silver slurry after, dried 10～30 minutes down for 150～200 ℃ in temperature;
C4. use the mold apparatus of respective shell number that product is carried out the case pres-sure encapsulation, promptly obtain tantalum electrolytic capacitor.
Embodiment two
Present embodiment provides a kind of manufacture method of polymer solid sheet type tantalum electrolyte capacitor, and is specific as follows:
(1) anode forms: the tantalum powder that with specific volume is 7000uF.v/g is by suppressing the briquet that 6 milligrams/CC of density is pressed into the tantalum wire lead-out wire, and 1700 ℃ temperature, and vacuum degree is to carry out under 5 * 0.0004Pa condition obtaining the anode briquet behind the vacuum high-temperature sintering;
(2) dielectric layer forms: in 0.4% salpeter solution, the direct voltage of employing 60V forms dielectric layer as the surface of the current density anode briquet that sintering obtains in step (1) that forms voltage, 80 milliamperes/gram with electrochemical method, the thickness of the withstand voltage control medium layer that can set according to the capacitor of preparing to make, if it is thicker, the time that can control electrochemistry formation is longer, short, then the control time shorter get final product;
(3) negative electrode forms: according to 1: 5 ratio of mass ratio preparation 3, the mixed solution of 4 vinyl monomer n-butanols and p-methyl benzenesulfonic acid ferrous solution, wherein, 3,4 vinyl monomer n-butanols are the mixtures that mixed formation by 3,4 ethene dioxythiophenes of unimolecule attitude with 1: 3 the mass ratio that n-butanol is pressed;
(31) described briquet is immersed stop taking-up after 3 minutes in the described mixed solution;
(32) polyase 13 5 minutes at room temperature, polymerization is 20 minutes under 35 ℃ of temperature;
(33) briquet after the polymerization in the step (32) is cleaned taking-up after 30 minutes in the deionized water of 25 ℃ of temperature;
(34) under 135 ℃ of temperature, dried 20 minutes;
(35) use 60% the direct voltage of the direct voltage 60V of aforementioned formation dielectric layer (to be 60V * 60%=36V), in mass ratio is 2.5% p-methyl benzenesulfonic acid solution, to mend and form 20 minutes as forming voltage;
(36) under 135 ℃ of temperature, dried 20 minutes;
Generally repeat 4～6 times repeating step (3)～(36), forms 3,4 ethene dioxythiophene PEDT of 0.2～0.3 millimeters thick as negative electrode up to described anode briquet surface;
After the briquet surface impregnation solids content of polymerization formation negative electrode was 6% graphite, oven dry was 20 minutes under 150 ℃ of temperature;
Flood conductive polymer silver slurry afterwards, oven dry is 20 minutes under 180 ℃ of temperature;
Briquet behind the impregnated silver pulp is prescinded the anode tantalum wire, be bonded on the metal framework of encapsulating housing under 150 ℃ of temperature oven dry 20 minutes;
The shell number corresponding mold apparatus of use and encapsulating housing carries out the case pres-sure encapsulation to product, promptly obtains the tantalum electrolytic capacitor of macromolecule negative electrode.
On the basis of the above-mentioned macromolecule negative electrode tantalum electrolytic capacitor that makes, after can also carrying out subsequent treatment, obtain final macromolecule negative electrode solid sheet type tantalum electrolyte capacitor product, specifically comprise: (1) uses laser printer printed product specification and anodal sign; (2) use bar shear and bead cutter to cut away product framework coupling part and anode side; (3) use special-purpose aging equipment that product is applied the aging of enough time under the rated voltage; (4) use automatic test machine, product is carried out 100% performance test and rejects waste product simultaneously automatically according to corresponding testing standard; (5) the product lead-in wire is carried out standardized automatic moulding and braid, promptly obtain the finished product tantalum electrolytic capacitor that to check the back warehouse-in or directly use.
Above-mentioned production has in the solid sheet type tantalum electrolyte capacitor of macromolecule negative electrode, by adopting macromolecular material EDT monomer (3 of unimolecule attitude, the mixture of 4 ethene dioxythiophenes and n-butanol) and the mixed solution that is mixed with of the p-methyl benzenesulfonic acid iron of band conduction iron ion, make that polymerization forms polymeric coating layer as the macromolecule negative electrode on the tantalum anode briquet that forms dielectric layer, the high-frequency electrical conductance of this macromolecule negative electrode is 20S/cm, it is the higher polymeric coating layer of a kind of conductivity, material as height negative electrode, it not only will have lower resistivity, but also to have desirable commissure molecular structure and thickness just can reach requirement, chemical equivalent concentration ratio as the solution when the polymerization, relation is very big between the resistivity of polymerization temperature and speed and PEDT film and the leakage current of product, determined whether can make qualified solid sheet type tantalum electrolyte capacitor at last with macromolecule negative electrode, therefore adopt the chemical polymerization method in the embodiment of the invention, can reach and be controlled at effectively that polymerization forms the purpose of the polymerization quality of PEDT layer on the outer dielectric layer of anode briquet, and then can make out leakage current and meet the requirements of solid sheet type tantalum electrolyte capacitor with low impedance at high frequency macromolecule negative electrode.
In sum, in the embodiment of the invention with the tantalum piece as anode, polymerization forms 3,4 ethene dioxythiophene PEDT layers as negative electrode on tantalum piece anode, the encapsulation back forms the solid sheet type tantalum electrolyte capacitor with macromolecule negative electrode.Because 3,4 ethene dioxythiophene PEDT layer negative electrode have excellent low impedance at high frequency characteristic, make the high-frequency resistance of this tantalum electrolytic capacitor compare and to improve one to two order of magnitude with the tantalum electrolytic capacitor that with manganese dioxide is negative electrode, can be used in the higher circuit of frequency, can not cause the reduction of tantalum electrolytic capacitor capacity because of the raising of place channel frequency.And in that this tantalum electrolytic capacitor is unexpected when puncturing, can catching fire or blast, fail safe is higher.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (8)
1, a kind of polymer solid sheet type tantalum electrolyte capacitor is characterized in that, comprising:
In package casing, be provided with tantalum electric capacity particle, described tantalum electric capacity particle is made of tantalum piece anode, dielectric layer and the polymer cathode layer of band tantalum wire lead-out wire, tantalum piece anode coats dielectric layer outward, dielectric layer coats polymer cathode layer outward, the high-frequency electrical conductance of polymer cathode layer is 20S/cm, the tantalum wire lead-out wire of described tantalum piece anode is electrically connected with the anode lead wire of package casing, and polymer cathode layer is electrically connected with the cathode terminal of encapsulating housing.
2, capacitor according to claim 1 is characterized in that, described polymer cathode layer is the clad structure layer that 3,4 ethene dioxythiophene PEDT materials form.
3, capacitor according to claim 2 is characterized in that, the thickness of the clad structure layer that described 3,4 ethene dioxythiophene PEDT materials form is 0.2～0.3 millimeter.
4, a kind of manufacture method of polymer solid sheet type tantalum electrolyte capacitor is characterized in that, comprising:
A. will be the briquet of the band tantalum wire lead-out wire of raw material compacting with the tantalum powder, after vacuum-sintering,, on the anode briquet behind the sintering, form dielectric layer as the anode briquet;
B. with 3,4 vinyl monomer n-butanols and p-methyl benzenesulfonic acid ferrous solution are mixed with mixed solution by 1: 4～6 mass ratio, described briquet is immersed in the mixed solution of being prepared, and forming thickness at the briquet surface aggregate is that 0.2～0.3 millimeter 3,4 ethene dioxythiophene PEDT layers are as negative electrode;
C. briquet surface impregnation graphite, the silver slurry layer of polymerization formation negative electrode are drawn layer as negative electrode, the tantalum wire lead-out wire and the negative electrode of described briquet are drawn on layer anode lead wire and cathode terminal of the metal framework that is bonded to encapsulating housing respectively, promptly obtain polymer solid sheet type tantalum electrolyte capacitor behind the plastic packaging.
5, manufacture method according to claim 4 is characterized in that, described step a specifically comprises:
The tantalum powder that with specific volume is 8000-50000uF.V/g is pressed into the briquet of band tantalum wire lead-out wire by the pressed density of 5.0-6.5, obtains the anode briquet after carrying out vacuum high-temperature sintering under 1400～1800 ℃ of temperature, the vacuum degree 5 * 0.0004Pa condition;
With the described anode briquet behind the sintering, in the nitric acid electrolytic solution of 0.1-0.5%, the direct voltage that adopts 12-60V with electrochemical process forms dielectric layer as forming voltage under the current density of 60-100 milliampere/gram.
6, manufacture method according to claim 4 is characterized in that, described step b specifically comprises:
B1. according to ratio preparation 3, the 4 vinyl monomer n-butanols of mass ratio 1: 4～6 and the mixed solution of p-methyl benzenesulfonic acid ferrous solution;
B2. stop after 2～5 minutes in the mixed solution that the described briquet immersion step b1 that obtains among the step a is prepared and take out;
Described briquet polymerization at room temperature after b 3. will take out 10～60 minutes, polymerization is 20 minutes under 50～150 ℃ of temperature;
B4. the briquet after the polymerization among the above-mentioned steps b 3 is cleaned in the deionized water of 20～30 ℃ of temperature after 30 minutes and take out;
B5. under 120～150 ℃ of temperature, dried 10～30 minutes;
B6. 50～70% the direct voltage that uses among the step a dc voltage value when forming dielectric layer on the anode briquet is as forming voltage, mends in mass ratio is 2～3% p-methyl benzenesulfonic acid solution and forms 20 minutes;
B7. after step b6 mends formation, under 120～150 ℃ of temperature, dried 10～30 minutes;
Repeat above-mentioned steps b2～b7, the dielectric layer surface forms 3,4 ethene dioxythiophene PEDT layers of 0.2～0.3 millimeters thick as negative electrode outside described anode briquet.
7, manufacture method according to claim 4 is characterized in that, described step c specifically comprises:
C1. in above-mentioned steps b the polymerization briquet surface impregnation solids content that forms negative electrode be behind 2～10% the graphite, in the oven dry 10～30 minutes down of 130～150 ℃ of temperature;
C2. flood conductive polymer silver slurry after and draw layer, dried 10～30 minutes down for 150～200 ℃ in temperature as negative electrode;
C3. will flood the tantalum wire lead-out wire of the briquet after conductive polymer silver is starched, be bonded to form on the anode lead wire of metal framework of encapsulating housing and be electrically connected, negative electrode is drawn formation electrical connection on layer cathode terminal of the metal framework that bonds to encapsulating housing, under 150 ℃ of temperature, dried 10～30 fens;
C4. use the mold apparatus corresponding that product is carried out the case pres-sure encapsulation, promptly obtain polymer solid sheet type tantalum electrolyte capacitor with encapsulating housing.
8, according to the manufacture method described in claim 4 or 6, it is characterized in that, described 3,4 vinyl monomer n-butanols be by 3,4 ethene dioxythiophenes of unimolecule attitude and n-butanol by 1: the mass ratio of 1-5 mixes the mixture that forms.
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| CN109741945A (en) * | 2019-02-02 | 2019-05-10 | 江西省和德曼实业有限公司 | A kind of macromolecule tantalum capacitor |
| CN110233052A (en) * | 2019-06-12 | 2019-09-13 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | A kind of capacitor and preparation method thereof |
| CN111048319A (en) * | 2019-11-13 | 2020-04-21 | 株洲宏达电子股份有限公司 | Sheet-type tantalum capacitor manufactured by aqueous-phase electrochemical polymerization of thiophene and manufacturing method thereof |
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2008
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| CN102270535A (en) * | 2011-05-13 | 2011-12-07 | 株洲宏达电子有限公司 | Method for manufacturing polymer ethylenedioxythiophene (PEDT) cathode plate type tantalum electrolytic capacitor by two-step method |
| CN102270535B (en) * | 2011-05-13 | 2013-10-23 | 株洲宏达电子有限公司 | Method for manufacturing polymer ethylenedioxythiophene (PEDT) cathode plate type tantalum electrolytic capacitor by two-step method |
| CN102394180A (en) * | 2011-07-18 | 2012-03-28 | 四川安科特电子科技有限公司 | Method for manufacturing chip type organic solid electrolyte electrolytic capacitor |
| CN102394180B (en) * | 2011-07-18 | 2014-06-04 | 四川安科特电子科技有限公司 | Method for manufacturing chip type organic solid electrolyte electrolytic capacitor |
| CN104916443A (en) * | 2015-06-16 | 2015-09-16 | 北京七一八友益电子有限责任公司 | High-voltage chip-type conducting polymer solid electrolyte tantalum capacitor and manufacturing method thereof |
| CN104916443B (en) * | 2015-06-16 | 2017-12-19 | 北京七一八友益电子有限责任公司 | High voltage chip conducting polymer solid electrolyte Ta capacitor and its manufacture method |
| CN105428095A (en) * | 2015-11-30 | 2016-03-23 | 天津大学 | Vacuum control apparatus for improving consistence of performance of polythiophene solid tantalum capacitor |
| CN105428095B (en) * | 2015-11-30 | 2017-11-28 | 天津大学 | Improve the vacuum control unit of polythiophene solid tantalum capacitor consistency of performance |
| CN109741945A (en) * | 2019-02-02 | 2019-05-10 | 江西省和德曼实业有限公司 | A kind of macromolecule tantalum capacitor |
| CN110233052A (en) * | 2019-06-12 | 2019-09-13 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | A kind of capacitor and preparation method thereof |
| CN111048319A (en) * | 2019-11-13 | 2020-04-21 | 株洲宏达电子股份有限公司 | Sheet-type tantalum capacitor manufactured by aqueous-phase electrochemical polymerization of thiophene and manufacturing method thereof |
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