CN101404205B - Single-internal electrode chip capacitor - Google Patents
Single-internal electrode chip capacitor Download PDFInfo
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- CN101404205B CN101404205B CN2008100462645A CN200810046264A CN101404205B CN 101404205 B CN101404205 B CN 101404205B CN 2008100462645 A CN2008100462645 A CN 2008100462645A CN 200810046264 A CN200810046264 A CN 200810046264A CN 101404205 B CN101404205 B CN 101404205B
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- internal electrode
- chip capacitor
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Abstract
The invention provides a single internal electrode chip capacitor, belonging to the technical field of electronic devices and components, relating to a capacitor and a preparation method thereof, in particular to a small-capacity chip capacitor and the preparation method thereof; the capacitor comprises an end electrode, an internal electrode and dielectric material; the dielectric material is a multi-layer ceramic layer body and the internal electrode is a multi-layer internal electrode; the ceramic layer body and the internal electrode are crossed and overlapped together, with two ends sealed to form the end electrode; the internal electrode is a single internal electrode which is connected with one end electrode wherein only; the single internal electrode is an internal electrode which is printed on the surface of the ceramic layer body by a printing process; the lamination quantity of the ceramic layer body and the internal electrode and the area of the internal electrode can be adjusted according to the needed capacity of the capacitor. The capacity of the small-capacity chip capacitor is more than the capacity of the capacitor without the internal electrode and is less than the capacity of the chip capacitor of multi-layer sheet-typed parallel structure of traditional interdigital capacitors; the preparation method is consistent with that of the normal chip capacitor.
Description
Technical field:
The invention belongs to technical field of electronic components, relate to capacitor and manufacture method thereof, particularly low capacity chip capacitor and manufacture method thereof.
Background technology:
Traditional chip capacitor comprises two termination electrodes, the interior electrode and the dielectric substance that link to each other with termination electrode.Usually, chip capacitor has the multilayer sheet type parallel-connection structure of the form formation of interdigital capacitor: each layer capacitance forms a pair of interdigital electrode structure by two interior electrodes, a pair of interdigital electrode structure and be positioned at this dielectric substance in the middle of interdigital electrode structure is formed a chip interdigital capacitor, several chip interdigital capacitors are stacked, and adopt termination electrode that electrode in all of homonymy is connected in parallel, form final chip capacitor.
Modern chip capacitor preparation technology requires the serial chip capacitor of different capabilities size is made the standard product of same size usually, the capacity of the chip capacitor of the multilayer sheet type parallel-connection structure that the form of the traditional interdigital capacitor of this feasible employing forms can't satisfy the requirement of some specific occasions, especially can't prepare the chip capacitor of some specific low capacities.Form interdigital structure because interior electrode links to each other with the termination electrode at two ends respectively, and the pole plate area of interior electrode is bigger, can causes the capacitor appearance value that constitutes bigger than normal; But, then may cause the appearance value of capacitor too small because the termination electrode distance is bigger if adopt the design of not having interior electrode.
Summary of the invention:
The invention provides a kind of single-internal electrode chip capacitor, under identical dielectric material and dimensional standard, the little capacity of chip capacitor can be realized, the big capacity of capacitor can be realized simultaneously than electrode in not having than traditional multilayer sheet type parallel-connection structure with interdigital capacitor.
Technical solution of the present invention is as follows:
A kind of single-internal electrode chip capacitor comprises termination electrode, interior electrode and dielectric substance, and described dielectric substance is a multi-layer ceramics layer body, and described interior electrode is an electrode in the multilayer; Described ceramic layer body is in the same place with interior electrode intersecting, and two ends sealed forms termination electrode.Electrode is single interior electrode in described, only links to each other with one of them termination electrode.
Electrode is printed on the interior electrode on described ceramic layer body surface for adopting typography in the described list.
The present invention comes down to propose the design of electrode in a kind of list, when having effectively reduced the termination electrode distance, utilize single electrode to reduce the pole plate area of electrode, thereby realized that capacity within the specific limits is adjustable, produce the single-internal electrode chip capacitor that satisfies capacity requirement.The present invention since in will be single electrode introduce in the ceramic body, thereby effectively reduced distance between the two end electrodes, make capacitor volume capacitor of electrode in do not have big; Simultaneously, the present invention is compared to the chip capacitor of traditional multilayer sheet type parallel-connection structure with interdigital capacitor owing to adopt single interior electrode, has reduced the pole plate area of electrode, thereby has made capacitor volume littler.The present invention can pass through to adjust size and single inner electrode layer number of single interior electrode pad area, thereby realizes the purpose of different capabilities within the specific limits.
The manufacture method of single-internal electrode chip capacitor of the present invention is formed by following process steps:
A) the ceramic low temperature co-fired material preparation with certain dielectric constant becomes ceramic layer body;
B) electrode in ceramic layer body surface printing list forms the ceramic layer body of having printed interior electrode;
C) will less than the ceramic layer body of electrode in the printing and the ceramic layer body of having printed interior electrode through be staggeredly stacked, etc. static pressure, cutting,
Sintering, unhairing limit, termination procedure and make single-internal electrode chip capacitor of the present invention.
The manufacture method of single-internal electrode chip capacitor of the present invention is consistent with the manufacture method of conventional chip capacitor, just when electrode in the ceramic layer body surface printing, printing be single in electrode.The manufacture method of other processing steps and conventional chip capacitor is in full accord.
The invention has the beneficial effects as follows: the present invention utilizes single interior electrode to effectively reduce the termination electrode distance on the one hand, and it is big than the capacitor of electrode in not having to make capacitor volume; Reduced the pole plate area of electrode on the other hand, make capacitor volume tradition have chip capacitor little of the multilayer sheet type parallel-connection structure of interdigital capacitor; By adjusting size and single inner electrode layer number of single interior electrode pad area, can produce the chip capacitor of different capabilities within the specific limits.
Description of drawings:
Fig. 1 is the structural representation of a kind of single-internal electrode chip capacitor provided by the invention.
Embodiment
A kind of single-internal electrode chip capacitor comprises termination electrode, interior electrode and dielectric substance, and described dielectric substance is a multi-layer ceramics layer body, and described interior electrode is an electrode in the multilayer; Described ceramic layer body is in the same place with interior electrode intersecting, and two ends sealed forms termination electrode.Electrode is single interior electrode in described, only links to each other with one of them termination electrode.Electrode is printed on the interior electrode on described ceramic layer body surface for adopting typography in the described list.
In the such scheme,, can realize different chip capacitor capacity within the specific limits by the stacked number of plies of adjusting ceramic layer body, the stacked number of plies and the interior electrode size of inner electrode layer body.
Claims (5)
1. a single-internal electrode chip capacitor comprises termination electrode, interior electrode and dielectric substance, and described dielectric substance is a multi-layer ceramics layer body, and described interior electrode is an electrode in the multilayer; Described ceramic layer body is in the same place with interior electrode intersecting, and two ends sealed forms termination electrode; It is characterized in that described interior electrode is single interior electrode, promptly electrodes all link to each other with same termination electrode in all.
2. single-internal electrode chip capacitor according to claim 1 is characterized in that, electrode is printed on the interior electrode on described ceramic layer body surface for adopting typography in the described list.
3. single-internal electrode chip capacitor according to claim 1 and 2 is characterized in that, the stacked quantity of described ceramic layer body is adjusted according to required condenser capacity size.
4. single-internal electrode chip capacitor according to claim 1 and 2 is characterized in that, the stacked quantity of described interior electrode is adjusted according to required condenser capacity size.
5. single-internal electrode chip capacitor according to claim 1 is characterized in that, the area of described interior electrode is adjusted according to required condenser capacity size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100462645A CN101404205B (en) | 2008-10-13 | 2008-10-13 | Single-internal electrode chip capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100462645A CN101404205B (en) | 2008-10-13 | 2008-10-13 | Single-internal electrode chip capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101404205A CN101404205A (en) | 2009-04-08 |
| CN101404205B true CN101404205B (en) | 2010-11-17 |
Family
ID=40538173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100462645A Expired - Fee Related CN101404205B (en) | 2008-10-13 | 2008-10-13 | Single-internal electrode chip capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101404205B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1357898A (en) * | 1994-10-19 | 2002-07-10 | Tdk株式会社 | Multiple-layer ceramic chip capacitor |
-
2008
- 2008-10-13 CN CN2008100462645A patent/CN101404205B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1357898A (en) * | 1994-10-19 | 2002-07-10 | Tdk株式会社 | Multiple-layer ceramic chip capacitor |
Non-Patent Citations (3)
| Title |
|---|
| JP特开2008-47907A 2008.02.28 |
| JP特开平10-22172A 1998.01.23 |
| JP特开平5-109584A 1993.04.30 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101404205A (en) | 2009-04-08 |
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Owner name: CHENGDU CHENGDIAN ELECTRONIC + INFORMATION TECHNOL Free format text: FORMER OWNER: ELECTRON SCIENCE + TECHNOLOGY UNIV. Effective date: 20111231 |
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Free format text: CORRECT: ADDRESS; FROM: 610054 CHENGDU, SICHUAN PROVINCE TO: 611731 CHENGDU, SICHUAN PROVINCE |
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Effective date of registration: 20111231 Address after: 611731 research building, University of Electronic Science and technology, No. 2006 West Avenue, hi tech West District, Sichuan, Chengdu Patentee after: Chengdu Electronic & Information Technology Engineering Co., Ltd. Address before: 610054 No. two, Jianshe North Road, Chengdu, Sichuan, 4 Patentee before: University of Electronic Science and Technology of China |
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