CN101398557B - Reflection-permeation array substrate - Google Patents
Reflection-permeation array substrate Download PDFInfo
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- CN101398557B CN101398557B CN2007101752072A CN200710175207A CN101398557B CN 101398557 B CN101398557 B CN 101398557B CN 2007101752072 A CN2007101752072 A CN 2007101752072A CN 200710175207 A CN200710175207 A CN 200710175207A CN 101398557 B CN101398557 B CN 101398557B
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Abstract
The invention relates to an anti-penetration typed array substrate, comprising a glass substrate and an array mainbody; the glass substrate comprises a first surface and a second surface which face toeach other; the first surface of the glass substrate forms an emboss which is provided with a reflection plate; the second surface of the glass substrate is provided with the array mainbody. The anti-penetration typed array substrate effectively solves the defect that the parameters of the existing anti-penetration typed array substrate such as thickness of resin layer, thickness of passivation layer, clearance of liquid crystal box and the like are difficult to be arranged during the design process and improves the quality of the liquid crystal display device.
Description
Technical field
The present invention relates to a kind of array base palte, particularly a kind of Transflective array base palte.
Background technology
Liquid crystal indicator is to use now a kind of in maximum panel display apparatus, it mainly is made up of the liquid crystal layer that injects between two board structures and the board structure, two board structures are provided with the electrode that can produce electric field, the liquid crystal molecule of liquid crystal layer moves with electric field behind the electrode generation voltage, liquid crystal molecule according to the certain orientation rotation, makes light pass liquid crystal layer according to certain refractive index under effect of electric field.
Liquid crystal indicator can be divided into transmission-type according to its display mode, Transflective and reflection-type.So-called transmission-type is the display mode that utilizes backlight display frame, reflection-type is to utilize the display mode of the light display frame of injecting from the outside, Transflective is the display mode between transmission-type and reflection-type, and promptly Transflective both can utilize backlight also can utilize the light of injecting from the outside.
Liquid crystal indicator is divided into according to the direction of an electric field that it drives liquid crystal: vertical electric field type liquid crystal display device and lateral electric-field type liquid crystal display device, wherein comprise in the vertical electric field type liquid crystal display device: twisted nematic (Twist Nematic, be designated hereinafter simply as " TN ") structure and vertical orientating type (VerticalAlign is designated hereinafter simply as " VA ") structure etc.; Comprise in the lateral electric-field type liquid crystal display device: interior switch type (InPlane Switch is designated hereinafter simply as " the IPS ") structure of fringing field switch type (Fringe Field Switch is designated hereinafter simply as " FFS ") structure and face etc.Vertical electric field type liquid crystal display device is to form vertical electric field by the public electrode that is separately positioned on the pixel electrode on the array base palte and be arranged on the colored filter substrate; Lateral electric-field type liquid crystal display device is by being arranged on pixel electrode on the array base palte and public electrode to form transverse electric field.Vertical electric field type and lateral electric-field type liquid crystal display device are known technology now, and product enters produce market already accordingly, therefore here its concrete structure no longer are described in further detail.In addition, its simple structure of TN type liquid crystal indicator is widely used in the small-sized panel display apparatus; FFS type liquid crystal indicator and IPS type liquid crystal indicator etc. are then compared other patterns and are had better viewing angle properties, therefore are widely used in the high quality flat panel display.
Therefore the light that transflective type liquid crystal display device need be injected from the outside with baffle reflection structurally increased resin bed that is used to form the reflecting plate embossing and the reflection board structure that is used for reflection ray than transmissive liquid crystal display device.Transflective type liquid crystal display device is corresponding in original transmissive liquid crystal display device to have increased above-mentioned sandwich construction, therefore the array base palte surface of transflective liquid crystal display device presents very irregular surface, specifically: because the regional transmission in pixel region is different with the reflector space structure, present irregular surface at pixel region, thereby caused having increased in the process of design liquid crystal cell the difficulty of setting parameters (thickness of resin bed, the thickness of passivation layer, cel-gap etc.).
Fig. 1 is existing half transmitting array base-plate structure synoptic diagram.As shown in Figure 1, formed grid line (not drawing among the figure) and gate electrode 2, gate insulation layer 3, active layer 4, source-drain electrode 5, data line (not drawing among the figure), resin bed 6, reflecting plate 7, passivation layer 8 and pixel electrode 9 on glass substrate 1 surface successively, be specially: grid line and gate electrode 2 and gate insulation layer 3 have been set on the glass substrate 1; Active layer 4 is positioned at gate electrode 2 tops, and is separated with gate insulation layer 3 between active layer 4 and the gate electrode 2; Source-drain electrode 5 is positioned on the active layer 4 and isolation channel is set, and source-drain electrode 5 one ends are connected with pixel electrode 9 with data line binding, the other end; Resin bed 6 is positioned on the gate insulation layer 3, and its surface is provided with rough embossing; Reflecting plate 7 is positioned on the resin bed 6, and its surface is formed with rough embossing equally, to improve reflectivity; Passivation layer 8 is positioned on source-drain electrode 5 and the reflecting plate 7; Pixel electrode 9 is positioned at passivation layer 8 surfaces, covers the pixel region that is used for Show Color, is connected with an end of source-drain electrode 5 by the via hole on the passivation layer 8 81.
Because prior art forms embossing by resin bed in the reflector space of pixel region, and reflecting plate is set thereon, cause the former surface that rises and falls that should smooth pixel region become, make liquid crystal injection rate IR difference in the pixel region, regional transmission in the pixel region has different distance light travels with reflector space simultaneously, has increased the difficulty of setting parameters (thickness of resin, the thickness of passivation layer, cel-gap etc.) when therefore designing liquid crystal cell.In addition, the resin bed and the reflection board structure that are provided with embossing produce many adverse effects for the stability between other parameters, even therefore product produces some potential adverse effects to its steady operation after rolling off the production line.
Summary of the invention
The purpose of this invention is to provide a kind of Transflective array base palte, effectively solve existing Transflective array base palte parameters and set the excessive defective of difficulty.
For achieving the above object, the invention provides a kind of Transflective array base palte, comprise: glass substrate and array main body, glass substrate comprises relative first and second, glass substrate is provided with regional transmission river reflector space, reflector space first of glass substrate is formed with embossing, and reflecting plate is set in embossing; Second of glass substrate the array main body is set.
Wherein, the array main body is a switch type main structure body in twisted nematic main structure body, vertical orientating type main structure body, fringing field switch type main structure body or the face.
Wherein, embossing is a formation.
Wherein, the material of reflecting plate is aluminium, molybdenum, titanium, aluminium alloy or titanium alloy.
Wherein, on first of glass substrate, diaphragm is set also.
Wherein, the material of diaphragm is the nitride or the resin of silicon.
The Transflective array base palte that the present invention proposes, by on the one side of glass substrate, forming embossing, and reflecting plate is set in embossing, can make the reflecting plate that originally is positioned at the array main body and array body portion from, make the cel-gap in the pixel region be tending towards even, make pixel electrode surface formation not have the structure that rises and falls simultaneously, when pixel electrode produces the uniform electric field of electric field intensity like this, liquid crystal molecule is fitly arranged under the effect of uniform electric field uniformly, improves the quality of liquid crystal indicator.In addition, reflecting plate and array body portion from the Transflective array base-plate structure, surface height to pixel region does not produce any influence, therefore do not need to consider resin bed and reflecting plate cause in the prior art height problem, liquid crystal injection rate IR problem and propagation path of light problem etc., also avoided causing influencing each other between the parameters of the problems referred to above, the problem that is unfavorable for the liquid crystal indicator steady operation, not only improve the quality of liquid crystal indicator, but also simplified the manufacturing engineering of liquid crystal indicator.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Description of drawings
Fig. 1 is existing half transmitting array base-plate structure synoptic diagram;
Fig. 2 is the structural representation of first embodiment of the invention;
Fig. 3 is the structural representation of second embodiment of the invention;
Fig. 4 is the structural representation of third embodiment of the invention.
Description of reference numerals:
The 1-glass substrate; The 2-gate electrode; The 3-gate insulation layer;
The 4-active layer; The 5-source-drain electrode; The 6-resin bed;
The 7-reflecting plate; The 8-passivation layer; The 9-pixel electrode;
The 10-public electrode; The 11-diaphragm; The 81-via hole.
Embodiment
Transflective array base palte of the present invention, comprise: glass substrate and array main body, glass substrate comprise relative first and second, and glass substrate is provided with regional transmission and reflector space, reflector space first of glass substrate is formed with embossing, and reflecting plate is set in embossing; Second of glass substrate the array main body is set.
First embodiment of the invention
Fig. 2 is the structural representation of first embodiment of the invention.As shown in Figure 2, the Transflective array base palte comprises: glass substrate 1 and array main body, wherein glass substrate 1 is provided with regional transmission and reflector space, first face at the glass substrate 1 of corresponding reflector space is formed with embossing, embossing is to second of glass substrate 1 recessed structure, the uniform reflecting plate 7 of thickness is set in the embossing of 1 first of glass substrate, and the shape of reflecting plate 7 is identical with the embossing shape; With on second of first of glass substrate 1 relative glass substrate 1 the array main body is set, wherein the array main body has comprised grid line (not drawing among the figure), gate electrode 2, gate insulation layer 3, active layer 4, source-drain electrode 5, data line (not drawing among the figure), passivation layer 8 and pixel electrode 9; The array agent structure is specially: 1 second of glass substrate grid line and gate electrode 2 are set; Covering gate insulation course 3 above grid line and gate electrode 2 makes grid line and gate electrode 2 and other layers mutually insulated; On the surface of gate insulation layer 3, be positioned at gate electrode 2 directly over active layer 4 is set; On the top of active layer 4 source-drain electrode 5 and data line are set, and source-drain electrode 5 is provided with isolation channel, one end of source-drain electrode 5 is connected with data line, the other end is connected with pixel electrode 9, so the two ends of gate electrode 2 source-drain electrode 5 when level signal is provided are electrically connected mutually by active layer 4; On source-drain electrode 5 surfaces passivation layer 8 is set, makes passivation layer 8 can play the effect of protection source-drain electrode 5; On passivation layer 8 surfaces pixel electrode 9 is set, pixel electrode 9 respective pixel zones, and is electrically connected with an end of source-drain electrode 5 by the via hole 81 on the passivation layer 8 make the data-signal of pixel electrode 9 receptions from the other end transmission of source-drain electrode 5.
The Transflective array base palte that present embodiment proposes, by forming embossing first of glass substrate, and reflecting plate is set in embossing, can make the reflecting plate that originally is positioned at the array main body and array body portion from, make the cel-gap in the pixel region be tending towards even, make pixel electrode surface formation not have the structure that rises and falls simultaneously, when pixel electrode produces the uniform electric field of electric field intensity like this, liquid crystal molecule is fitly arranged under the effect of uniform electric field uniformly, improves the quality of liquid crystal indicator.In addition, reflecting plate and array body portion from the Transflective array base-plate structure, surface height to pixel region does not produce any influence, therefore do not need to consider resin bed and reflecting plate cause in the prior art height problem, liquid crystal injection rate IR problem and propagation path of light problem etc., also avoided further causing influencing each other between the parameters of the problems referred to above, the problem that is unfavorable for the liquid crystal indicator steady operation, not only improve the quality of liquid crystal indicator, but also simplified the manufacturing engineering of liquid crystal indicator.
In the present embodiment, form embossing, be specially:, make photoresist cover glass substrate surface equably at glass baseplate surface coating photoresist by the embossing mask process; The mask exposure photoresist that use is provided with the dot matrix pattern removes the photoresist that is exposed; Use the chemical mordant etching not by photoresist cover glass substrate surface, form embossing recessed down; Peel off remaining photoresist at last, finish the embossing mask process.Form reflecting plate by the reflecting plate mask process, be specially: be formed with deposition of reflective sheet material material on the glass substrate of embossing; The coating photoresist makes photoresist cover the reflecting material surface equably; The mask exposure photoresist that use is provided with the reflector space pattern removes the photoresist that is exposed; The reflecting material that uses the chemical mordant etching not covered by photoresist stays the reflecting material of reflector space; Peel off the residue photoresist at last, finish the reflecting plate mask process.
In addition, by the thickness of adjusting passivation layer the reflector space propagation path of light is changed to λ, λ/2, λ/4, λ/8 simply in the present embodiment, has therefore improved the deficiency that in the past propagation path of light can only be set to λ or λ/2 greatly.Wherein, λ is an optical wavelength.
The array main body that present embodiment proposes is a TN type structure, therefore produce under the prerequisite of vertical electric field, the figure of each interlayer structure of array body interior and each electronic component can change arbitrarily, and the technology contents about the TN type array main body that forms vertical electric field is a known technology, and therefore the structure of the present invention here embodiment that how to be applied in various TN type array main bodys gives unnecessary details no longer one by one.And first of glass substrate is the one side over against backlight in the present embodiment; Second of glass substrate is the one side over against liquid crystal cell.
Further, embossing in the present embodiment can maximize reflection efficiency like this for a formation.In addition, employed reflection plate material is in the present embodiment: aluminium (Al), molybdenum (Mo), titanium (Ti), aluminium alloy or titanium alloy etc.
Second embodiment of the invention
Fig. 3 is the structural representation of second embodiment of the invention.As shown in Figure 3, the Transflective array base palte comprises: glass substrate 1 and array main body, wherein glass substrate 1 is provided with regional transmission and reflector space, first face at the glass substrate 1 of corresponding reflector space is formed with embossing, embossing is to second of glass substrate 1 recessed structure, the uniform reflecting plate 7 of thickness is set in the embossing of 1 first of glass substrate, the shape of reflecting plate 7 is identical with the embossing shape, diaphragm 11 is set on reflecting plate 7, and diaphragm 11 covers first of glass substrate 1 equably; With second of first of glass substrate 1 relative glass substrate 1 the array main body is set, wherein the array main body has comprised grid line (not drawing among the figure), gate electrode 2, gate insulation layer 3, active layer 4, source-drain electrode 5, data line (not drawing among the figure), passivation layer 8 and pixel electrode 9; The array agent structure is specially: 1 second of glass substrate grid line and gate electrode 2 are set; Covering gate insulation course 3 above grid line and gate electrode 2 makes grid line and gate electrode 2 and other layers mutually insulated; On the surface of gate insulation layer 3, be positioned at gate electrode 2 directly over active layer 4 is set; On the top of active layer 4 source-drain electrode 5 and data line are set, and source-drain electrode 5 is provided with isolation channel, one end of source-drain electrode 5 is connected with data line, the other end is connected with pixel electrode 9, so the two ends of gate electrode 2 source-drain electrode 5 when level signal is provided are electrically connected mutually by active layer 4; On source-drain electrode 5 surfaces passivation layer 8 is set, makes passivation layer 8 can play the effect of protection source-drain electrode 5; On passivation layer 8 surfaces pixel electrode 9 is set, pixel electrode 9 respective pixel zones, and is electrically connected with an end of source-drain electrode 5 by the via hole 81 on the passivation layer 8 make the data-signal of pixel electrode 9 receptions from the other end transmission of source-drain electrode 5.
The Transflective array base palte that present embodiment proposes; by forming embossing first of glass substrate; reflecting plate is set in embossing; and diaphragm is set on reflecting plate; prevent that established reflection board structure is subjected to physical damnification or chemical corrosion in follow-up array main body manufacture process, effectively guaranteed the stability of established reflection board structure.
Further, diaphragm can or be a resin for the nitride (SiNx) of silicon.
Third embodiment of the invention
Fig. 4 is the structural representation of third embodiment of the invention.As shown in Figure 4, the Transflective array base palte comprises: glass substrate 1 and array main body, wherein glass substrate 1 is provided with regional transmission and reflector space, first face at the glass substrate 1 of corresponding reflector space is formed with embossing, embossing is to second of glass substrate 1 recessed structure, the uniform reflecting plate 7 of thickness is set in the embossing of 1 first of glass substrate, and the shape of reflecting plate 7 is identical with the embossing shape; With on second of first of glass substrate 1 relative glass substrate 1 the array main body is set, wherein the array main body has comprised grid line (not drawing among the figure), gate electrode 2, gate insulation layer 3, active layer 4, source-drain electrode 5, data line (not drawing among the figure), passivation layer 8, pixel electrode 9 and public electrode 10; The array agent structure is specially: second at glass substrate 1 is provided with grid line, gate electrode 2 and public electrode 10, and public electrode 10 is positioned at pixel region, be used to provide normal threshold voltage and with grid line and gate electrode 2 mutually insulated settings; Covering gate insulation course 3 above grid line, gate electrode 2 and public electrode 10 makes grid line, gate electrode 2 and public electrode 10 and other layers mutually insulated; On the surface of gate insulation layer 3, be positioned at gate electrode 2 directly over active layer 4 is set; On the top of active layer 4 source-drain electrode 5 and data line are set, and source-drain electrode 5 is provided with isolation channel, one end of source-drain electrode 5 is connected with data line, the other end is connected with pixel electrode 9, so the two ends of gate electrode 2 source-drain electrode 5 when level signal is provided are electrically connected mutually by active layer 4; On source-drain electrode 5 surfaces passivation layer 8 is set, makes passivation layer 8 can play the effect of protection source-drain electrode 5; On passivation layer 8 surfaces pixel electrode 9 is set, pixel electrode 9 respective pixel zones, pixel electrode 9 surfaces also are provided with the slit and are used to produce transverse electric field, and be electrically connected with an end of source-drain electrode 5 by the via hole 81 on the passivation layer 8, make pixel electrode 9 receive the data-signal that sends from the other end of source-drain electrode 5.
The array main body that present embodiment proposes is a FFS type structure, therefore produce under the prerequisite of transverse electric field, the figure of each interlayer structure of array body interior and each electronic component can change arbitrarily, and the technology contents about the FFS type array main body that forms transverse electric field is a known technology, and therefore the structure of the present invention here embodiment that how to be applied in various FFS type array main bodys gives unnecessary details no longer one by one.And first of glass substrate is the one side over against backlight in the present embodiment; Second of glass substrate is the one side over against liquid crystal cell.
The TN type array main body that first embodiment of the invention proposes is a kind of mode that drives liquid crystal with vertical electric field, VA type array main body also belongs to the vertical electric field type of drive in addition, and the structure of VA type array main body is known technologies for affiliated technical field personnel, so the embodiment how structure of the present invention is applied to VA type array main body no longer gives unnecessary details.The FFS type array main body that proposes in the same third embodiment of the invention is for driving a kind of mode of liquid crystal with transverse electric field, IPS type array main body also belongs to the transverse electric field type of drive in addition, and the structure of IPS type array main body is known technologies for affiliated technical field personnel, so the embodiment how structure of the present invention is applied to IPS type array main body also no longer gives unnecessary details.
In addition, the reflector space among the present invention on the array base palte can be positioned at any position of pixel region, the position that is not limited to provide among the embodiment.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (6)
1. Transflective array base palte, comprise: glass substrate and array main body, described glass substrate comprises relative first and second, described glass substrate is provided with regional transmission and reflector space, it is characterized in that: the reflector space first of glass substrate is formed with embossing, in described embossing reflecting plate is set; Second of glass substrate the array main body is set.
2. Transflective array base palte according to claim 1 is characterized in that: described array main body is a switch type main structure body in twisted nematic main structure body, vertical orientating type main structure body, fringing field switch type main structure body or the face.
3. Transflective array base palte according to claim 1 is characterized in that: described embossing is a formation.
4. Transflective array base palte according to claim 1 is characterized in that: the material of described reflecting plate is aluminium, molybdenum, titanium, aluminium alloy or titanium alloy.
5. according to the described Transflective array base palte of the arbitrary claim of claim 1～4, it is characterized in that: on first of described glass substrate, diaphragm is set also.
6. according to the Transflective array base palte under the claim 5, it is characterized in that: the material of described diaphragm is the nitride or the resin of silicon.
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| CN101581851B (en) * | 2008-05-16 | 2011-05-18 | 群康科技(深圳)有限公司 | Transflective liquid crystal panel and transflective liquid crystal display device |
| CN106898615B (en) * | 2017-02-28 | 2020-06-30 | 京东方科技集团股份有限公司 | Reflection-type array substrate, preparation method thereof and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1866099A (en) * | 2005-05-16 | 2006-11-22 | 三星电子株式会社 | Display panel and method of manufacturing the same, and transflective liquid crystal display with the same |
| CN1982995A (en) * | 2005-12-06 | 2007-06-20 | 三星电子株式会社 | Transflective liquid crystal |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866099A (en) * | 2005-05-16 | 2006-11-22 | 三星电子株式会社 | Display panel and method of manufacturing the same, and transflective liquid crystal display with the same |
| CN1982995A (en) * | 2005-12-06 | 2007-06-20 | 三星电子株式会社 | Transflective liquid crystal |
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