CN101397209B - Fusible pattern moulding method of silicon carbide with complicated shape - Google Patents
Fusible pattern moulding method of silicon carbide with complicated shape Download PDFInfo
- Publication number
- CN101397209B CN101397209B CN2008102319783A CN200810231978A CN101397209B CN 101397209 B CN101397209 B CN 101397209B CN 2008102319783 A CN2008102319783 A CN 2008102319783A CN 200810231978 A CN200810231978 A CN 200810231978A CN 101397209 B CN101397209 B CN 101397209B
- Authority
- CN
- China
- Prior art keywords
- insulation
- paraffin
- resol
- vacuumize
- rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Ceramic Products (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a method for moulding and shaping complex-shaped carborundum. According to the requirements of the actual shape of a carborundum moulded piece, a paraffin female die is designed and processed; then phenolic resin mixture is poured in the die and is solidified for shaping at room temperature. Later, by deep solidification and carbonization, the multi-hole carbon blanker with the shape of the moulded piece is prepared. However, the paraffin die is melted during deep solidification and removed automatically; meanwhile, the melted paraffin is collected for recycling. Finally, siliconizing is carried out on the multi-hole carbon blanker, and the moulded piece of carborundum with the designed shape is prepared, which can be applied to use in the environments of corruption, abrasion, oxidation and high temperature. The method effectively solves the problems of complex shaping and net shaping of carborundum, and is characterized by low cost, one-step shaping, easy industrial production, not requiring demoulding and repeated utilization to die material, etc.
Description
Technical field
The present invention relates to the moulding process that a kind of difficulty adds ceramic objects, particularly a kind of fusible pattern moulding method of complicated shape silicon carbide.
Background technology
Silicon carbide ceramics is a kind of material with good over-all properties.It is little that silicon carbide ceramics has density, and thermal conductivity is high, and thermal expansivity is low, good thermal shock, and good in oxidation resistance, characteristics such as hot strength is big, and is corrosion-resistant are able to use at numerous industrial circles.For example be used to prepare rocket combustion chamber's inwall, nozzle and nose cone in space flight and aviation industry; Be used to prepare turbocharger rotor in automotive industry.Yet the preparation of the silit of complex-shaped, clean moulding is the gordian technique that the restriction silicon carbide ceramics is applied always.It is that carbon raw material is prepared the porous carbon idiosome that USP (3859421,1975) proposes with the furfuryl alcohol resin first, subsequently idiosome is carried out the idiosome that machining obtains having silit product geometrical shape.Constant basically because of geometrical dimension before and after the idiosome siliconising, promptly make the silit product of design shape after the idiosome siliconising.But, but adopt machining to give the complicated forming ability that the certain geometrical shape of porous idiosome has limited this technology to a certain extent.It is carbon raw material that Chinese patent (CN1609054A) discloses with the photosensitive resin, in conjunction with the photocureable rapid shaping technology, makes the silit product of complicated shape.Because of having adopted rapid shaping technique, its complicated forming ability is improved.But there is certain limitation in this method, and both the price of photosensitive resin was higher and the carbon residue rate is lower, was unfavorable for suitability for industrialized production.
Summary of the invention
The object of the present invention is to provide a kind of geometrical shape, have that the demoulding of need not, moulding stock can reuse, the fusible pattern moulding method of the complicated shape silicon carbide of low-cost, disposal molding by mould control silit product.
For achieving the above object, the technical scheme that the present invention adopts is:
1) curing molding: manufacture the paraffin former according to silit product profile, by 1:0.33～1:3 weight ratio terepthaloyl moietie and starch are mixed then and process pore-forming agent; The weight ratio of pressing 1:1～1:3 again is with 2130# heat-reactive phenolic resin and pore-forming agent mixing and stirring; The benzene sulfonyl chloride that adds resol and terepthaloyl moietie gross weight 4～10% subsequently mixes processes the resol mixture; The resol miscellany is poured in the paraffin former, shelves under the room temperature and make this mixture solidified moulding obtain sample;
2) deep and firmization: the sample of curing molding is 60 ℃ in initial temperature is warming up to 100～180 ℃ of insulation 8h, temperature rise rate is 20 ℃/12h, reclaims fusion paraffin simultaneously;
3) carbonization: at N
2Carry out carbonization under the gas shiled, rise to 700～1000 ℃ of insulation 1h by room temperature, temperature rise rate is 50 ℃/h, cools to the furnace after the completion insulation to stop to supply N below 300 ℃
2, process the porous carbon idiosome;
4) siliconising: in crucible, put into the industrial silicon grain; The porous carbon idiosome is flat on the silicon grain; Then crucible is put into vacuum oven; Vacuumize and be heated to 1000 ℃ with 8 ℃/min heat-up rate after stop to vacuumize, continue to be heated to 1450～1550 ℃ with same heat-up rate subsequently, insulation 30～.120min;
4) row's silicon: vacuumize once more after the insulation, and be warming up to 1650 ℃, be incubated 10～30min, promptly make the silit product of design shape after the cooling.
The present invention is that 2130# heat-reactive phenolic resin (production of Xi'an resin processing plant) is a carbon raw material with finished product resol; With returnable paraffin is mould; Earlier according to actual requirement design of product and processing mold; Be poured into the resol mixture in the mould, obtain the regulatable porous carbon idiosome of pore structure through curing molding, deep and firmization, carbonization, further complex-shaped silit product is prepared in siliconising.Realization is by the geometrical shape of mould control silit product, and mould itself then can be removed voluntarily and reclaim because of fusion in deep and firmization process.
Embodiment
Embodiment 1: curing molding: manufacture the paraffin former according to silit product profile, by the 1:2 weight ratio terepthaloyl moietie and starch are mixed then and process pore-forming agent; The weight ratio of pressing 1:1 again is with 2130# heat-reactive phenolic resin and pore-forming agent mixing and stirring; The benzene sulfonyl chloride that adds resol and terepthaloyl moietie gross weight 8% subsequently mixes processes the resol mixture; The resol miscellany is poured in the paraffin former, shelves under the room temperature and make this mixture solidified moulding obtain sample; Deep and firmization: the sample of curing molding is 60 ℃ in initial temperature is warming up to 150 ℃, temperature rise rate is 20 ℃/12h, reclaims fusion paraffin simultaneously; Carbonization: at N
2Carry out carbonization under the gas shiled, rise to 900 ℃ of insulation 1h by room temperature, temperature rise rate is 50 ℃/h, cools to the furnace after the completion insulation to stop to supply N below 300 ℃
2, process the porous carbon idiosome; Siliconising: in crucible, put into the industrial silicon grain; The porous carbon idiosome is flat on the silicon grain, then crucible is put into vacuum oven, vacuumize and be heated to 1000 ℃ with 8 ℃/min heat-up rate after stop to vacuumize; Continue to be heated to 1500 ℃ with same heat-up rate subsequently, insulation 70min; Row's silicon: vacuumize once more after the insulation, and be warming up to 1650 ℃, be incubated 10～30min, promptly make the silit product of design shape after the cooling.
Embodiment 2: curing molding: manufacture the paraffin former according to silit product profile, by the 1:0.5 weight ratio terepthaloyl moietie and starch are mixed then and process pore-forming agent; The weight ratio of pressing 1:3 again is with 2130# heat-reactive phenolic resin and pore-forming agent mixing and stirring; The benzene sulfonyl chloride that adds resol and terepthaloyl moietie gross weight 5% subsequently mixes processes the resol mixture; The resol miscellany is poured in the paraffin former, shelves under the room temperature and make this mixture solidified moulding obtain sample; Deep and firmization: the sample of curing molding is 60 ℃ in initial temperature is warming up to 120 ℃, temperature rise rate is 20 ℃/12h, reclaims fusion paraffin simultaneously; Carbonization: at N
2Carry out carbonization under the gas shiled, rise to 700 ℃ of insulation 1h by room temperature, temperature rise rate is 50 ℃/h, cools to the furnace after the completion insulation to stop to supply N below 300 ℃
2, process the porous carbon idiosome; Siliconising: in crucible, put into the industrial silicon grain; With the porous carbon idiosome. be flat on the silicon grain, then crucible put into vacuum oven, vacuumize and be heated to 1000 ℃ with 8 ℃/min heat-up rate after stop to vacuumize; Continue to be heated to 1480 ℃ with same heat-up rate subsequently, insulation 85min; Row's silicon: vacuumize once more after the insulation, and be warming up to 1650 ℃, be incubated 10～30min, promptly make the silit product of design shape after the cooling.
Embodiment 3: curing molding: manufacture the paraffin former according to silit product profile, by the 1:1 weight ratio terepthaloyl moietie and starch are mixed then and process pore-forming agent; The weight ratio of pressing 1:1.3 again is with 2130# heat-reactive phenolic resin and pore-forming agent mixing and stirring; The benzene sulfonyl chloride that adds resol and terepthaloyl moietie gross weight 10% subsequently mixes processes the resol mixture; The resol miscellany is poured in the paraffin former, shelves under the room temperature and make this mixture solidified moulding obtain sample; Deep and firmization: the sample of curing molding is 60 ℃ in initial temperature is warming up to 180 ℃, temperature rise rate is 20 ℃/12h, reclaims fusion paraffin simultaneously; Carbonization: at N
2Carry out carbonization under the gas shiled, rise to 1000 ℃ of insulation 1h by room temperature, temperature rise rate is 50 ℃/h, cools to the furnace after the completion insulation to stop to supply N below 300 ℃
2, process the porous carbon idiosome; Siliconising: in crucible, put into the industrial silicon grain; The porous carbon idiosome is flat on the silicon grain, then crucible is put into vacuum oven, vacuumize and be heated to 1000 ℃ with 8 ℃/min heat-up rate after stop to vacuumize; Continue to be heated to 1520 ℃ with same heat-up rate subsequently, insulation 60min; Row's silicon: vacuumize once more after the insulation, and be warming up to 1650 ℃, be incubated 10～30min, promptly make the silit product of design shape after the cooling.
Embodiment 4: curing molding: manufacture the paraffin former according to silit product profile, by the 1:3 weight ratio terepthaloyl moietie and starch are mixed then and process pore-forming agent; The weight ratio of pressing 1:1.6 again is with 2130# heat-reactive phenolic resin and pore-forming agent mixing and stirring; The benzene sulfonyl chloride that adds resol and terepthaloyl moietie gross weight 6% subsequently mixes processes the resol mixture; The resol miscellany is poured in the paraffin former, shelves under the room temperature and make this mixture solidified moulding obtain sample; Deep and firmization: the sample of curing molding is 60 ℃ in initial temperature is warming up to 130 ℃, temperature rise rate is 20 ℃/12h, reclaims fusion paraffin simultaneously; Carbonization: at N
2Carry out carbonization under the gas shiled, rise to 800 ℃ of insulation 1h by room temperature, temperature rise rate is 50 ℃/h, cools to the furnace after the completion insulation to stop to supply N below 300 ℃
2, process the porous carbon idiosome; Siliconising: in crucible, put into the industrial silicon grain; The porous carbon idiosome is flat on the silicon grain, then crucible is put into vacuum oven, vacuumize and be heated to 1000 ℃ with 8 ℃/min heat-up rate after stop to vacuumize; Continue to be heated to 1450 ℃ with same heat-up rate subsequently, insulation 120min; Row's silicon: vacuumize once more after the insulation, and be warming up to 1650 ℃, be incubated 10～30min, promptly make the silit product of design shape after the cooling.
Embodiment 5: curing molding: manufacture the paraffin former according to silit product profile, by the 1:0.33 weight ratio terepthaloyl moietie and starch are mixed then and process pore-forming agent; The weight ratio of pressing 1:2 again is with 2130# heat-reactive phenolic resin and pore-forming agent mixing and stirring; The benzene sulfonyl chloride that adds resol and terepthaloyl moietie gross weight 4% subsequently mixes processes the resol mixture; The resol miscellany is poured in the paraffin former, shelves under the room temperature and make this mixture solidified moulding obtain sample; Deep and firmization: the sample of curing molding is 60 ℃ in initial temperature is warming up to 100 ℃, temperature rise rate is 20 ℃/12h, reclaims fusion paraffin simultaneously; Carbonization: at N
2Carry out carbonization under the gas shiled, rise to 750 ℃ of insulation 1h by room temperature, temperature rise rate is 50 ℃/h, cools to the furnace after the completion insulation to stop to supply N below 300 ℃
2, process the porous carbon idiosome; Siliconising: in crucible, put into the industrial silicon grain; The porous carbon idiosome is flat on the silicon grain, then crucible is put into vacuum oven, vacuumize and be heated to 1000 ℃ with 8 ℃/min heat-up rate after stop to vacuumize; Continue to be heated to 1550 ℃ with same heat-up rate subsequently, insulation 30min; Row's silicon: vacuumize once more after the insulation, and be warming up to 1650 ℃, be incubated 10～30min, promptly make the silit product of design shape after the cooling.
Embodiment 6: curing molding: manufacture the paraffin former according to silit product profile, by the 1:1.5 weight ratio terepthaloyl moietie and starch are mixed then and process pore-forming agent; The weight ratio of pressing 1:2.5 again is with 2130# heat-reactive phenolic resin and pore-forming agent mixing and stirring; The benzene sulfonyl chloride that adds resol and terepthaloyl moietie gross weight 7% subsequently mixes processes the resol mixture; The resol miscellany is poured in the paraffin former, shelves under the room temperature and make this mixture solidified moulding obtain sample; Deep and firmization: the sample of curing molding is 60 ℃ in initial temperature is warming up to 160 ℃, temperature rise rate is 20 ℃/12h, reclaims fusion paraffin simultaneously; Carbonization: at N
2Carry out carbonization under the gas shiled, rise to 950 ℃ of insulation 1h by room temperature, temperature rise rate is 50 ℃/h, cools to the furnace after the completion insulation to stop to supply N below 300 ℃
2, process the porous carbon idiosome; Siliconising: in crucible, put into the industrial silicon grain; The porous carbon idiosome is flat on the silicon grain, then crucible is put into vacuum oven, vacuumize and be heated to 1000 ℃ with 8 ℃/min heat-up rate after stop to vacuumize; Continue to be heated to 1460 ℃ with same heat-up rate subsequently, insulation 100min; Row's silicon: vacuumize once more after the insulation, and be warming up to 1650 ℃, be incubated 10～30min, promptly make the silit product of design shape after the cooling.
Embodiment 7: curing molding: manufacture the paraffin former according to silit product profile, by the 1:2.6 weight ratio terepthaloyl moietie and starch are mixed then and process pore-forming agent; The weight ratio of pressing 1:2.8 again is with 2130# heat-reactive phenolic resin and pore-forming agent mixing and stirring; The benzene sulfonyl chloride that adds resol and terepthaloyl moietie gross weight 9% subsequently mixes processes the resol mixture; The resol miscellany is poured in the paraffin former, shelves under the room temperature and make this mixture solidified moulding obtain sample; Deep and firmization: the sample of curing molding is 60 ℃ in initial temperature is warming up to 110 ℃, temperature rise rate is 20 ℃/12h, reclaims fusion paraffin simultaneously; Carbonization: at N
2Carry out carbonization under the gas shiled, rise to 850 ℃ of insulation 1h by room temperature, temperature rise rate is 50 ℃/h, cools to the furnace after the completion insulation to stop to supply N below 300 ℃
2, process the porous carbon idiosome; Siliconising: in crucible, put into the industrial silicon grain; The porous carbon idiosome is flat on the silicon grain, then crucible is put into vacuum oven, vacuumize and be heated to 1000 ℃ with 8 ℃/min heat-up rate after stop to vacuumize; Continue to be heated to 1540 ℃ with same heat-up rate subsequently, insulation 50min; Row's silicon: vacuumize once more after the insulation, and be warming up to 1650 ℃, be incubated 10～30min, promptly make the silit product of design shape after the cooling.
Claims (1)
1. the fusible pattern moulding method of a complicated shape silicon carbide is characterized in that:
1) curing molding: manufacture the paraffin former according to silit product profile, by 1:0.33～1:3 weight ratio terepthaloyl moietie and starch are mixed then and process pore-forming agent; The weight ratio of pressing 1:1～1:3 again is with 2130# heat-reactive phenolic resin and pore-forming agent mixing and stirring; The benzene sulfonyl chloride that adds resol and terepthaloyl moietie gross weight 4～10% subsequently mixes processes the resol mixture; The resol miscellany is poured in the paraffin former, shelves under the room temperature and make this mixture solidified moulding obtain sample;
2) deep and firmization: the sample of curing molding is 60 ℃ in initial temperature is warming up to 100～180 ℃ of insulation 8h, temperature rise rate is 20 ℃/12h, reclaims fusion paraffin simultaneously;
3) carbonization: at N
2Carry out carbonization under the gas shiled, rise to 700～1000 ℃ of insulation 1h by room temperature, temperature rise rate is 50 ℃/h, cools to the furnace after the completion insulation to stop to supply N below 300 ℃
2, process the porous carbon idiosome;
4) siliconising: in crucible, put into the industrial silicon grain; The porous carbon idiosome is flat on the silicon grain; Then crucible is put into vacuum oven; Vacuumize and be heated to 1000 ℃ with 8 ℃/min heat-up rate after stop to vacuumize, continue to be heated to 1450～1550 ℃ with same heat-up rate subsequently, insulation 30～120min;
4) row's silicon: vacuumize once more after the insulation, and be warming up to 1650 ℃, be incubated 10～30min, promptly make the silit product of design shape after the cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102319783A CN101397209B (en) | 2008-10-28 | 2008-10-28 | Fusible pattern moulding method of silicon carbide with complicated shape |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102319783A CN101397209B (en) | 2008-10-28 | 2008-10-28 | Fusible pattern moulding method of silicon carbide with complicated shape |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101397209A CN101397209A (en) | 2009-04-01 |
| CN101397209B true CN101397209B (en) | 2012-05-23 |
Family
ID=40516077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102319783A Expired - Fee Related CN101397209B (en) | 2008-10-28 | 2008-10-28 | Fusible pattern moulding method of silicon carbide with complicated shape |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101397209B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101655009B (en) * | 2009-07-23 | 2012-08-15 | 西安科技大学 | Method for manufacturing annular test-piece from cylindrical rock-soil material sample |
| CN111331763A (en) * | 2020-02-24 | 2020-06-26 | 沈阳中航迈瑞特工业有限公司 | Preparation process of reverse mold material for resin mold |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1051591C (en) * | 1992-12-29 | 2000-04-19 | 斯格特纸业公司 | Non-creped web and method for making same |
| CN101148360A (en) * | 2007-08-14 | 2008-03-26 | 西安交通大学 | Customized forming method for gradient porous structure ceramic |
| CN101209922A (en) * | 2007-12-21 | 2008-07-02 | 西安交通大学 | Forming method for lost foam of complicated shape silicon carbide |
-
2008
- 2008-10-28 CN CN2008102319783A patent/CN101397209B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1051591C (en) * | 1992-12-29 | 2000-04-19 | 斯格特纸业公司 | Non-creped web and method for making same |
| CN101148360A (en) * | 2007-08-14 | 2008-03-26 | 西安交通大学 | Customized forming method for gradient porous structure ceramic |
| CN101209922A (en) * | 2007-12-21 | 2008-07-02 | 西安交通大学 | Forming method for lost foam of complicated shape silicon carbide |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2003-313059A 2003.11.06 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101397209A (en) | 2009-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100575306C (en) | The forming method for lost foam of complicated shape silicon carbide | |
| WO2017114064A1 (en) | Method for preparing environmentally friendly fine casting mould shell | |
| CN107021771B (en) | Calcium oxide-based ceramic casting mold manufacturing method based on 3D printing technology | |
| CN104291827A (en) | Process for preparing silicon carbide ceramic in complicated shape from phenolic resin serving as carbon source by adopting solid phase sintering | |
| WO2017114065A1 (en) | Method for preparing environmentally friendly casting material | |
| CN104261804A (en) | Preparation method of ceramic mold | |
| CN102515812A (en) | Carbon and silicon carbide crucible and preparation process thereof | |
| CN102060542A (en) | Method for producing fused silica ceramic crucible | |
| CN101913878A (en) | Method for preparing silicon carbide particle-reinforced silicon nitride composite ceramic parts | |
| CN104311098A (en) | Method of preparing porous material by utilizing shell coal gasification fly ash | |
| CN101734910A (en) | Method for preparing porous alumina ceramic core | |
| CN110143819A (en) | A kind of indirect free forming method of complexity ceramic structures | |
| CN104400673A (en) | Method for manufacturing superhard grinding tool employing thermosetting ceramic as bonding agent | |
| CN105060896A (en) | Preparation method of silicon carbide ceramic precision device | |
| CN101397209B (en) | Fusible pattern moulding method of silicon carbide with complicated shape | |
| CN110976758B (en) | Lost foam full mold casting process | |
| CN108059458A (en) | A kind of preparation method of mold graphite material | |
| CN108658612B (en) | Preparation method of refractory heat-insulating brick | |
| CN101186523B (en) | Method for producing dipping graphite tube | |
| CN105967692B (en) | Manufacturing method of silicon-nitride-combined silicon carbide ceramic crucible | |
| CN116856171A (en) | Preparation method of modified carbon fiber suitable for preparing carbon/ceramic brake disc by mould pressing process | |
| CN106187263B (en) | The manufacturing method and C/C-SiC composite material component of C/C-SiC composite material component | |
| CN102674815A (en) | Alumina ceramic nozzle material and preparation method thereof | |
| CN112250473B (en) | Gradient porous ceramic core and preparation method thereof | |
| CN111205656B (en) | Filler model material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120523 Termination date: 20141028 |
|
| EXPY | Termination of patent right or utility model |