CN101394191B - Low noise amplifier module and radio communication apparatus - Google Patents
Low noise amplifier module and radio communication apparatus Download PDFInfo
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- CN101394191B CN101394191B CN200710030317XA CN200710030317A CN101394191B CN 101394191 B CN101394191 B CN 101394191B CN 200710030317X A CN200710030317X A CN 200710030317XA CN 200710030317 A CN200710030317 A CN 200710030317A CN 101394191 B CN101394191 B CN 101394191B
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Abstract
The invention discloses a low-noise amplifier module. The amplifier module comprises a module base plate, a directional coupler which is integrated in the inside of the module base plate and an amplification circuit unit welded on the module base plate and including an amplifier. The amplification circuit unit and the directional coupler form a balanced amplification circuit. Besides, the invention discloses a wireless communication device. Since the balance amplification circuit is made into the low-noise amplifier module, the invention has the advantage of realizing the balance between low cost and high performance.
Description
Technical field
The present invention relates to the electronic circuit technology field, in particular, the present invention relates to a kind of low noise amplifier module and Wireless Telecom Equipment.
Background technology
Low noise amplifier (LNA, Low Noise Amplifier) is the important circuit that constitutes wireless communication system, and its effect is that the signal that antenna receives is amplified.Reception signal from antenna is generally all very faint, and its signal level and noise-floor are very approaching.Signal to faint like this amplifies, and the most important thing is to ensure signal quality, and this just requires amplifying circuit can not introduce too many noise, otherwise signal will further be worsened, and causes carrying out demodulation.In circuit design, weigh the deterioration degree of amplifier with noise factor to signal quality, relevant is defined as:
Noise factor (NF)=output signal-to-noise ratio/input signal-to-noise ratio
Wherein signal to noise ratio is defined as
Signal to noise ratio=signal power/noise power
Therefore have
Input signal-to-noise ratio=input signal power/input noise power
Output signal-to-noise ratio=output signal power/output noise power
For amplifier
Output signal power=gain (Gain) * input signal power
Therefore for amplifier
Noise factor=output noise power/(input noise power * gain)
In the top formula, (input noise power * gain) can be regarded the output noise power of ideal amplifier as.Ideal amplifier does not produce extra noise, and output noise is caused by input noise fully.Therefore, the noise factor of amplifier can be regarded the ratio of the output noise power of reality with respect to desirable output noise power again as, and the physical characteristic of reflection is the size of amplifier generated noise.
Noise factor is the most important technical indicator of low noise amplifier.Relevant with material, bias current voltage and the impedance matching state of amplifier.In circuit design, obtain higher NF index in order to make amplifier, require circuit to carry out designing impedance matching according to the optimum noise impedance of amplifier tube.
In addition for better with other circuit interconnection of system, generally also require the input/output port impedance of low noise amplifier to satisfy certain requirement.Requirement to port Impedance is to describe with return loss (RL), i.e. amplifier another one important index requirement is return loss (RL).
In the circuit design process of reality, often exist contradiction between two requirements of NF and RL, both can not accomplish optimum state simultaneously.Design from the NF angle, need the input impedance of amplifier tube to satisfy the requirement that optimum noise matees; Design from the angle of RL, need amplifier tube input impedance to equate (being generally normal impedances such as 50 ohm or 75 ohm) with transmission line impedance.In the design of general type amplifier, can only be in the design of compromising between the demand aspect NF and the RL two.
With reference to figure 1; Shown in prior art low noise amplifier input impedance pie diagram be the common tool of analysis circuit resistance matching problem, mark among the figure 1 is best RL match point, 2 is optimum N F match point; Because these 2 generally on same position; Therefore can't take into account simultaneously, can only be in design according to the system requirements design of compromising, such as 3 such actual match points.
The balance amplifying circuit is in order to solve a kind of circuit structure of the contradiction that RL and NF two aspect indexs are difficult to take into account simultaneously, and its principle is as shown in Figure 2:
The balance amplifying circuit is made up of identical amplifying circuit of two-way and coupler.The effect of coupler is that signal is carried out shunt and closes the road, and reflected signal is imported to isolated port, and the function that wherein reflected signal is imported to isolated port is to realize through the phase difference of two output ports of control coupler.Generally the phase difference with two output ports of coupler is controlled to be 90 degree, and the reflected signal of two-way amplifier will produce the phase difference of 180 degree at input port like this, thereby balance out fully; And be 0 at the isolated port phase difference of coupler, will all be sponged by load resistance.
Theoretically, the RL of balance amplifying circuit can accomplish very good.Yet in the circuit design of reality, the amplifying circuit of two shunt can not be accomplished identical; Coupler also can not be accomplished the complete five equilibrium of power, 90 degree that phase difference neither be absolute, so input port still has certain reflected signal to exist.
Through adopting the balance amplifying circuit, can the requirement according to optimum N F of the coupling of single channel amplifier be designed, as long as guarantee the index of the identical and coupler of two-way circuit, just can reach enough good RL.
With reference to figure 3, a kind of existing balance amplifying circuit implementation is a microstrip line coupler commonly used.Microstrip line coupler commonly used has Wilkinson coupler and two kinds of forms of branch line coupler.The microstrip line coupler is convenient to circuit production and design, is a kind of balance amplification circuit structure form of using the earliest.But because integrated level is not high, adopt microstrip line design coupler need take very big printed circuit board (PCB) (PCB, PrintedCircuit Board) layout area, its area occupied is more than 5 times of strip line coupler.The amplifying circuit of this structure has high requirements to the pcb board material in addition, for guaranteeing NF and coincident indicator, generally need select for use high frequency sheet material to design, and costs an arm and a leg.
Summary of the invention
The technical problem that the embodiment of the invention solves provides a kind of low noise amplifier module and Wireless Telecom Equipment, between low cost and high-performance, to realize compromise preferably.
A kind of low noise amplifier module, it comprises:
Module substrate;
Be integrated into the inner directional coupler of said module substrate;
Be welded on the amplifier circuit unit that comprises amplifier on the said module substrate, said amplifier circuit unit and said directional coupler Compositional balance amplifying circuit.
A kind of Wireless Telecom Equipment, it comprises:
Use mainboard;
Be welded on the low noise amplifier module on the said application mainboard;
Be welded on the said application mainboard, form the application circuit device of application circuit with the balance amplifying circuit of said low noise amplifier module;
Wherein said low noise amplifier module comprises:
Module substrate;
Be integrated into the inner directional coupler of said module substrate;
Be welded on the said module substrate, with the amplifier circuit unit that comprises amplifier of said directional coupler Compositional balance amplifying circuit.
The above-mentioned major part of balance amplifying circuit that will realize is designed to a low noise amplifier module; Said low noise amplifier module can be welded on the application mainboard of the Wireless Telecom Equipment that adopts this module; Not only saved the purchase cost of coupler, and reduced requirement, in the occasion that requires not to be very high the application mainboard PCB of Wireless Telecom Equipment; The application mainboard of Wireless Telecom Equipment can adopt FR4 to design, and stepped construction is had no restriction; And said low noise amplifier module can use in Different products as general balance amplifying circuit module, need not design iterations.
Description of drawings
Fig. 1 is a prior art low noise amplifier input impedance design pie diagram;
Fig. 2 is a prior art balance amplifying circuit principle schematic;
Fig. 3 is a kind of balance amplification circuit diagram that adopts the microstrip line coupler to constitute of prior art;
Fig. 4 is a kind of Wireless Telecom Equipment specific embodiment application circuit plate structure sketch map that the present invention adopts independent low noise amplifier module;
Fig. 5 is the first specific embodiment structural representation of the external pad of low noise amplifier module of the present invention;
Fig. 6 is the second specific embodiment structural representation of the external pad of low noise amplifier module of the present invention;
Fig. 7 is the low noise amplifier module substrate layer stack structure first specific embodiment sketch map of the present invention;
Fig. 8 is the low noise amplifier module substrate layer stack structure second specific embodiment sketch map of the present invention.
Embodiment
With reference to figure 4; The major part that will realize the balance amplifying circuit in the present embodiment is designed to a low noise amplifier (LNA; Low Noise Amplifier) form of module; Like diagram, can comprise for the application circuit of the Wireless Telecom Equipment (said Wireless Telecom Equipment can be radio communication base station or wireless communication terminal etc.) that adopts the balance amplifying circuit: use mainboard 1; Be welded on the LNA module 2 on the said application mainboard; And be welded on the said application mainboard 1, the balance amplifying circuit of realizing with said LAN module 2 is formed the application circuit device 3 of required application circuit, when processing, can at first the LNA module be welded to and use on the mainboard; To be welded to the application circuit device that the balance amplifying circuit of said LNA module is formed application circuit then and use on the mainboard.
Wherein, for the LNA module of present embodiment, the integrated major part of balance amplifying circuit, as a specific embodiment, it can comprise: module substrate 21; Be integrated into the directional coupler 22 of said module substrate 21 inside; And (label is only illustrated part amplifying circuit device among the figure to be welded on the amplifier circuit unit that comprises amplifier 23 on the said module substrate 21; But not identify whole amplifying circuit devices); Said amplifier circuit unit 23 and said directional coupler 22 Compositional balance amplifying circuits; When processing, can at first directional coupler be integrated into module substrate inside; To be welded on the module substrate with the amplifier circuit unit 23 of said directional coupler Compositional balance amplifying circuit then.
The pad structure that LNA module in the present embodiment adopts can adopt various ways, for example adopts castle structure or LGA form, and the pad of said two kinds of forms all can directly constitute through the conductor on the module substrate PCB, need not increase other operation.
For example, with reference to figure 5, present embodiment is for adopting the modular form of castle pad structure, and the external pad of module adopts the conductive via on the module substrate PCB side and is positioned at the pad structure of the conductive welding disk formation of bottom.The conductive via that wherein is arranged in side can be cut a part (the for example said part proportion that cuts away can be 50% or more than) in module substrate profile forming process; Stay the conduction sidewall of semicircle or arc at side, can constitute the external pad of module with the conductive welding disk that is positioned at module substrate PCB bottom.When module application, can carry out the SMT welding with other application circuit device, the conductive welding disk of bottom can contact with scolder with the conduction sidewall, strengthens soldering reliability.
In addition, for example, with reference to figure 6, present embodiment is for adopting the modular form of bottom land array (LGA) pad structure, and the external pad of module adopts the pad structure of the conductor formation that is positioned at module substrate PCB bottom.The pad of LGA form both can be distributed in around the module substrate bottom, also can be distributed in the inner zone line of module substrate.When module application, can carry out the SMT welding with other application circuit device, scolder contacts with the module substrate bottom conductor and forms tie point.For aforementioned castle pad, the LGA pad structure has characteristics such as collection miniaturization and pad density are higher.
Need explanation, in order to guarantee the electric property of LNA module, the PCB of module substrate can adopt that loss is low, the sheet material of high conformity; Comprise various types of high frequency organic boards or ceramic board; For example, adopt Rogers4000 high frequency sheet material and LTCCPT951 ceramic board, repeat no more here.Because the LNA module is independent of the application mainboard, so the material of mainboard requirement reduction greatly, the cost of using mainboard can be reduced.
In order to make the built-in coupler of module substrate reach preferable performance; The number of plies of module substrate PCB and the thickness of each layer are had certain requirement, for example, realize built-in coupler; Module substrate PCB can adopt minimum 4 laminates to design; The thickness of outer media reach the internal layer dielectric thickness be 5 times with first-class, for the thickness that do not make module substrate too thick so that influence attractive in appearance be difficult to processing, the thickness of internal layer medium can be less than 10mil.
For example, with reference to the schematic cross-section of 7, one LNA module substrates of figure, this module substrate is a kind of stepped construction of 4 laminates, has 4 layers of conductor and 3 layers of medium.The lead that wherein constitutes coupler is positioned at middle two-layer (conductor layer 2 and 3); The reference ground of coupler is positioned at two outside layers (conductor layer 1 and 4).Frame of broken lines has roughly identified the design section of coupler among the figure.In order to make the coupling effect that coupler reaches to be needed; Selection to thickness of dielectric layers has certain requirement; Need relatively thinner dielectric thickness between the two-layer coupling line, coupling line wherein can be chosen following scheme to the bed thickness restrictive condition in the present embodiment to needing thicker dielectric thickness between the ground:
2mil＜T＜15mil
10*T＜H＜30*T；
Wherein T is the thickness of the layer at coupler place, and H is the layer gross thickness of module substrate.
In addition, above-mentioned stepped construction shown in Figure 7 might not be fit under certain conditions, for example, if some high frequency sheet material tension force are not enough, is not suitable for using prepreg (PrePreg) to carry out the lamination design at skin; Perhaps skin only uses prepreg to be difficult to be adjusted to suitable thickness, under such certain situation, can select stepped construction shown in Figure 8 for use.
Fig. 8 is the schematic cross-section of another kind of LNA module substrate; This module substrate is a kind of stepped construction of 6 laminates, and in this stepped construction, skin has adopted central layer (Core) to carry out the lamination design; Skin has comprised a kind of prepreg and one deck central layer to the medium between the coupling line; Thickness can more freely be regulated like this, and has guaranteed outer field tension force requirement, wherein can choose following scheme to the bed thickness restrictive condition in the present embodiment:
2mil＜T＜15mil
10*T＜H＜30*T；
Wherein T is the thickness of the layer at coupler place, and H is the layer gross thickness of module substrate.
In addition, with reference to figure 5 and Fig. 6, but on module substrate metal shielding 4 of surface mount also, with shield electromagnetic interference, protect inner amplifying circuit device, said metal shielding 4 also can be as welding absorption plane.
To sum up, adopt above-mentioned technical scheme to have following advantage:
At first, cost advantage.The coupler design that realizes the balance amplifying circuit in the foregoing description is in a LNA module; Can save the purchase cost of coupler; And modular LNA can reduce the requirement to the application mainboard PCB of Wireless Telecom Equipment; In the occasion that requires not to be very high, the application mainboard of Wireless Telecom Equipment can adopt FR4 to design, and stepped construction is had no restriction; And the shared area of balance amplification circuits accounts for whole LNA veneer area less than 5%, therefore has very considerable benefit aspect the PCB purchase cost saving.
Secondly, the miniaturization of balance amplifying circuit is integrated into module substrate inside with coupler, can reduce the layout area of balance amplifying circuit;
Once more, the module versatility can be used in Different products after said LNA modular design success; And need not design iterations; And, therefore, meet the requirement of volume production fully because the LNA module of above structure can all adopt PCB and these the existing mature technology productions of SMT processing technology.
Once more, flexibility, therefore more flexible on using because the module of this structure realized miniaturization and reduced using the requirement of mainboard sheet material, be convenient to the integrated of LNA circuit and other application circuit.
The above only is an embodiment of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (8)
1. a low noise amplifier module is characterized in that, comprising:
Module substrate;
Be integrated into the inner directional coupler of said module substrate;
Be welded on the amplifier circuit unit that comprises amplifier on the said module substrate;
Said amplifier circuit unit and said directional coupler Compositional balance amplifying circuit;
Said module substrate adopts the overlapped way of 4 layers of conductor, and meets following bed thickness restrictive condition:
2mil＜T＜15mil
10*T＜H＜30*T；
Perhaps, said module substrate adopts the overlapped way of 6 layers of conductor, and meets following bed thickness restrictive condition:
2mil＜T＜15mil
10*T＜H＜30*T；
Wherein T is the thickness of the layer at coupler place, and H is the layer gross thickness of module substrate.
2. low noise amplifier module according to claim 1; It is characterized in that the external pad of said module adopts the pad structure of conductive via on the module substrate and the conductive welding disk formation that is positioned at bottom or is positioned at the pad structure of the conductor formation of module substrate bottom.
3. low noise amplifier module according to claim 1 is characterized in that, goes back the metal shielding that surface mount has a said low noise amplifier module on the said module substrate.
4. a Wireless Telecom Equipment is characterized in that, comprising:
Use mainboard;
Be welded on the low noise amplifier module on the said application mainboard;
Be welded on the said application mainboard, form the application circuit device of application circuit with the balance amplifying circuit of said low noise amplifier module;
Said low noise amplifier module comprises:
Module substrate;
Be integrated into the inner directional coupler of said module substrate;
Be welded on the said module substrate, with the amplifier circuit unit that comprises amplifier of said directional coupler Compositional balance amplifying circuit.
5. Wireless Telecom Equipment according to claim 4 is characterized in that, the external pad of said low noise amplifier module is that conductive via on the module substrate is with the conductive welding disk that is positioned at bottom or for being positioned at the conductor bottom the module substrate.
6. Wireless Telecom Equipment according to claim 4 is characterized in that, said module substrate adopts the overlapped way of 4 layers of conductor, and meets following bed thickness restrictive condition:
2mil＜T＜15mil
10*T＜H＜30*T；
Wherein T is the thickness of the layer at coupler place, and H is the layer gross thickness of module substrate.
7. Wireless Telecom Equipment according to claim 4 is characterized in that, said module substrate adopts the overlapped way of 6 layers of conductor, and meets following bed thickness restrictive condition:
2mil＜T＜15mil
10*T＜H＜30*T；
Wherein T is the thickness of the layer at coupler place, and H is the layer gross thickness of module substrate.
8. Wireless Telecom Equipment according to claim 4 is characterized in that, goes back the metal shielding that surface mount has a said low noise amplifier module on the said module substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710030317XA CN101394191B (en) | 2007-09-19 | 2007-09-19 | Low noise amplifier module and radio communication apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710030317XA CN101394191B (en) | 2007-09-19 | 2007-09-19 | Low noise amplifier module and radio communication apparatus |
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| Publication Number | Publication Date |
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| CN101394191A CN101394191A (en) | 2009-03-25 |
| CN101394191B true CN101394191B (en) | 2012-08-08 |
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| CN200710030317XA Active CN101394191B (en) | 2007-09-19 | 2007-09-19 | Low noise amplifier module and radio communication apparatus |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102065258B (en) * | 2010-12-06 | 2012-09-19 | 惠州硕贝德无线科技股份有限公司 | Antenna control circuit module of mobile digital television |
| CN107278029A (en) | 2012-12-21 | 2017-10-20 | 华为终端有限公司 | Electronic installation and grid array module |
| CN106849877A (en) * | 2016-12-20 | 2017-06-13 | 中国电子科技集团公司第四十三研究所 | One kind miniaturization low-noise amplifier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1310516A (en) * | 2000-02-21 | 2001-08-29 | 松下电器产业株式会社 | Power amplifier |
| CN1509106A (en) * | 2002-12-17 | 2004-06-30 | 台达电子工业股份有限公司 | Radio frequency power amplifier module integrating power control circuit |
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- 2007-09-19 CN CN200710030317XA patent/CN101394191B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1310516A (en) * | 2000-02-21 | 2001-08-29 | 松下电器产业株式会社 | Power amplifier |
| CN1509106A (en) * | 2002-12-17 | 2004-06-30 | 台达电子工业股份有限公司 | Radio frequency power amplifier module integrating power control circuit |
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| CN101394191A (en) | 2009-03-25 |
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