CN101383261A - Scanning electron microscope - Google Patents

Scanning electron microscope Download PDF

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Publication number
CN101383261A
CN101383261A CNA2007101621911A CN200710162191A CN101383261A CN 101383261 A CN101383261 A CN 101383261A CN A2007101621911 A CNA2007101621911 A CN A2007101621911A CN 200710162191 A CN200710162191 A CN 200710162191A CN 101383261 A CN101383261 A CN 101383261A
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CN
China
Prior art keywords
electron beam
electron microscope
sweep
electron
diamond film
Prior art date
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Granted
Application number
CNA2007101621911A
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Chinese (zh)
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CN101383261B (en
Inventor
郭养国
邓国星
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VisEra Technologies Co Ltd
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VisEra Technologies Co Ltd
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Publication of CN101383261A publication Critical patent/CN101383261A/en
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Publication of CN101383261B publication Critical patent/CN101383261B/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A scanning electron microscope is provided. The scanning electron microscope includes an electron beam source generating a primary electron beam, a condenser lens converging the primary electron beam, a base plate with a diamond film formed on the surface thereof having an aperture for passing of the primary electron beam, and a scanning unit two-dimensionally scanning a specimen with the primary electron beam. The invention can solve the problems of the deformation of the substrate gap and microparticle pollution, effectively reduce the cost, and efficiently increase the strength of electric beam.

Description

Sweep electron microscope
Technical field
The present invention relates to a kind of sweep electron microscope, particularly a kind of sweep electron microscope with diamond film.
Background technology
Along with semiconductor element integrated level fast lifting, (scanning electronmicroscope SEM) has been used for observation and detection to fine line pattern to sweep electron microscope.Sweep electron microscope is with the electron beam scanning sample, to be checked measure the electron beam bump secondary electron that sample produced after, again sample secondary electron image is shown on the screen.This technology is suitable for the observation to the field of semiconductor manufacture fine structure.
Fig. 1 illustrates traditional sweep electron microscope.Sweep electron microscope 1 comprises electron beam source 2, condenser lens 4, substrate 5, space 6, scanning element 7, object lens 8, sample 9 and detector 11.
Electron beam source 2 produces primary electron beam 3.Condenser lens 4 focuses on primary electron beam 3.Space 6 is formed in the substrate 5, passes through for primary electron beam 3.Scanning element 7 is carried out two-dimensional scan with 3 pairs of samples of primary electron beam 9.Object lens 8 are arranged between scanning element 7 and the sample 9, to focus on primary electron beam 3.Detector 11 detects the secondary electron that is produced by primary electron beam 3 irradiation samples 9.
The substrate of tradition sweep electron microscope is made by molybdenum.Yet because the hardness deficiency of molybdenum causes after electron beam clashes into continuously, the edge in substrate space very easily is out of shape, and causes image quality inferior.The substrate that uses generally must be changed once in every month at present, so can expend sizable cost expenditure.
Summary of the invention
One embodiment of the present of invention provide a kind of sweep electron microscope, comprising: electron beam source produces primary electron beam; Condenser lens focuses on this primary electron beam; Substrate, its surface is formed with the diamond film with hole, passes through for this primary electron beam; And scanning element, with this primary electron beam sample is carried out two-dimensional scan.This sweep electron microscope also comprises: object lens are arranged between this scanning element and this sample, in order to focus on this primary electron beam; And detector, shine the secondary electron that this sample produces in order to detect by this primary electron beam.
In the above-mentioned sweep electron microscope, this electron beam source can comprise a thermal electron emission type electron beam source or an electron emitting-type electron beam source.
In the above-mentioned sweep electron microscope, this electron beam source can be electron gun.
In the above-mentioned sweep electron microscope, this condenser lens can comprise electrostatic lens or magnetic lens.
In the above-mentioned sweep electron microscope, the thickness of this substrate can be substantially between 0.05～0.15mm.
In the above-mentioned sweep electron microscope, this substrate can be made by molybdenum.
In the above-mentioned sweep electron microscope, the thickness of this diamond film can be substantially between 10～100nm.
In the above-mentioned sweep electron microscope, the temperature of this diamond film can be substantially between 60～80 degree Celsius.
In the above-mentioned sweep electron microscope, the rate of heat transfer of this diamond film can be roughly 1200W/mK.
In the above-mentioned sweep electron microscope, this diamond film can be dielectric film.
In the above-mentioned sweep electron microscope, this diamond film can form by chemical vapour deposition technique.
In the above-mentioned sweep electron microscope, the aperture of this hole can be substantially between 0.1nm～0.2mm.
The operational process of above-mentioned sweep electron microscope is described with one embodiment of the present of invention.At first, radiate primary electron beam and quicken this primary electron beam from electron beam source.After this primary electron beam line focus lens focus, be coated with the space of the substrate of diamond film by the surface.This primary electron beam passes through scanning element subsequently, and focuses on sample surfaces once more by object lens, begins to carry out two-dimensional scan.When elementary electron beam shines in sample surfaces, can produce secondary electron or behind scattered electron, this secondary electron signal can be detected, collect by detector, obtains the two-dimentional electron image of this sample at last.
In the running of electron microscope, electron beam can clash into the substrate void edges continuously.In addition, for avoiding the pollution of environment particulate, it is necessary that substrate is implemented heat treatment.Therefore, have the diamond material of high rigidity and high thermal conductance, just quite be fit to be applied in the present invention, to avoid because of electron beam bump and high temperature are caused the substrate space to be out of shape and to be infected with the problem of particulate continuously.This hard diamond film can need not be changed through long-time use, so can effectively reduce cost.Have insulation function concurrently owing to diamond material in addition, thus can avoid taking place electric transmission, thus can effectively increase electron beam intensity.
In addition, diamond film can be made by traditional chemical vapour deposition process (CVD) simply, therefore, thin diamond film, for example the diamond film of nano-scale promptly can this low-cost mode complete.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, be elaborated with a preferred embodiment cited below particularly and conjunction with figs..
Description of drawings
Fig. 1 illustrates traditional sweep electron microscope.
Fig. 2 illustrates sweep electron microscope of the present invention.
Wherein, description of reference numerals is as follows:
Prior art part (Fig. 1)
1～sweep electron microscope;
2～electron beam source;
3～primary electron beam;
4～condenser lens;
5～substrate;
6～space;
7～scanning element;
8～object lens;
9～sample;
11～detector.
The present invention's part (Fig. 2)
10～sweep electron microscope;
12～electron beam source;
13～primary electron beam;
14～condenser lens;
16～substrate;
18～diamond film;
20～space;
22～scanning element;
24～object lens;
26～sample;
28～detector.
Embodiment
Fig. 2 illustrates sweep electron microscope according to one embodiment of present invention.Sweep electron microscope 10 comprises electron beam source 12, condenser lens 14, substrate 16, diamond film 18, space 20, scanning element 22, object lens 24, sample 26 and detector 28.
Electron beam source 12 produces primary electron beam 13.Condenser lens 14 focuses on primary electron beam 13.Diamond film 18 is coated on substrate 16 surfaces.Space 20 is formed in the substrate 16, passes through for primary electron beam 13.Scanning element 22 is carried out two-dimensional scan with 13 pairs of samples of primary electron beam 26.Object lens 24 are arranged between scanning element 22 and the sample 26, to focus on primary electron beam 13.Detector 28 detects the secondary electron that is produced by primary electron beam 13 irradiation samples 26.
Above-mentioned electron beam source 12 can comprise the electron beam source of a thermal electron emission type (heating electron emission type) or an electron emitting-type (field electron emission type), for example electron gun.Condenser lens 14 can comprise electrostatic lens (electrostatic lens) or magnetic lens (magnetic lens).The thickness of substrate 16 is substantially between 0.05～0.15mm, can (molybdenum Mo) makes by molybdenum.The thickness of diamond film 18 is substantially between 10～100nm.In the electron microscope running, diamond film 18 can be heated to temperature substantially between 60～80 degree Celsius or 70 degree Celsius, is infected with to avoid particulate.Diamond film 18 is roughly splendid heat conductor and the insulator of 1200W/mK for rate of heat transfer.Diamond film 18 can (chemical vapor deposition CVD) be formed at substrate 16 surfaces by chemical vapour deposition technique.The aperture of substrate 16 mesopores 20 is substantially between 0.1nm～0.2mm.
The operational process of above-mentioned sweep electron microscope below is described according to one embodiment of present invention, as shown in Figure 2.At first, radiate primary electron beam 13 and quicken this primary electron beam from electron beam source 12.After primary electron beam 13 line focus lens 14 focus on, be coated with the space 20 of the substrate 16 of diamond film 18 by the surface.Primary electron beam 13 passes through scanning element 22 subsequently, and focuses on sample 26 surfaces once more by object lens 24, and for example crystal column surface begins to carry out two-dimensional scan.When elementary electron beam 13 shines in sample 26 surfaces, can produce secondary electron or behind scattered electron (not shown), this secondary electron signal can be detected, collect by detector 28, obtain the two-dimentional electron image of sample 26 at last.
In the running of electron microscope, electron beam can clash into the substrate void edges continuously.In addition, for avoiding the pollution of environment particulate, it is necessary that substrate is implemented heat treatment.Therefore, have the diamond material of high rigidity and high thermal conductance, just quite be fit to be applied in the present invention, to avoid because of electron beam bump and high temperature are caused the substrate space to be out of shape and to be infected with the problem of particulate continuously.This hard diamond film can need not be changed through long-time use, so can effectively reduce cost.Have insulation function concurrently owing to diamond material in addition, thus can avoid taking place electric transmission, thus effectively increase electron beam intensity.
In addition, diamond film can be made by traditional chemical vapour deposition process (CVD) simply, therefore, thin diamond film, for example the diamond film of nano-scale promptly can this low-cost mode complete.
Though the present invention with preferred embodiment openly as above; yet above disclosure is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing to change and revise, so protection scope of the present invention should be as the criterion with claims.

Claims (14)

1. sweep electron microscope comprises:
Electron beam source produces primary electron beam;
Condenser lens focuses on this primary electron beam;
Substrate, its surface is formed with the diamond film with hole, passes through for this primary electron beam; And
Scanning element is carried out two-dimensional scan with this primary electron beam to sample.
2. sweep electron microscope as claimed in claim 1, wherein this electron beam source comprises a thermal electron emission type electron beam source or an electron emitting-type electron beam source.
3. sweep electron microscope as claimed in claim 1, wherein this electron beam source is an electron gun.
4. sweep electron microscope as claimed in claim 1, wherein this condenser lens comprises electrostatic lens or magnetic lens.
5. sweep electron microscope as claimed in claim 1, wherein the thickness of this substrate is substantially between 0.05～0.15mm.
6. sweep electron microscope as claimed in claim 1, wherein this substrate is made by molybdenum.
7. sweep electron microscope as claimed in claim 1, wherein the thickness of this diamond film is substantially between 10～100nm.
8. sweep electron microscope as claimed in claim 1, wherein the temperature of this diamond film is substantially between 60～80 degree Celsius.
9. sweep electron microscope as claimed in claim 1, wherein the rate of heat transfer of this diamond film is roughly 1200W/mK.
10. sweep electron microscope as claimed in claim 1, wherein this diamond film is a dielectric film.
11. sweep electron microscope as claimed in claim 1, wherein this diamond film forms by chemical vapour deposition technique.
12. sweep electron microscope as claimed in claim 1, wherein the aperture of this hole is substantially between 0.1nm～0.2mm.
13. sweep electron microscope as claimed in claim 1 also comprises: object lens are arranged between this scanning element and this sample, in order to focus on this primary electron beam.
14. sweep electron microscope as claimed in claim 1 also comprises: detector, shine the secondary electron that this sample produces in order to detect by this primary electron beam.
CN2007101621911A 2007-09-04 2007-12-21 Scanning electron microscope Expired - Fee Related CN101383261B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/896,622 2007-09-04
US11/896,622 US7601955B2 (en) 2007-09-04 2007-09-04 Scanning electron microscope

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CN101383261A true CN101383261A (en) 2009-03-11
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102136406A (en) * 2011-01-28 2011-07-27 北京航空航天大学 Small condenser for electron microscope
CN103187223A (en) * 2011-12-27 2013-07-03 Fei公司 Drift control in charged particle beam system
CN104157539A (en) * 2014-07-18 2014-11-19 奉化市宇创产品设计有限公司 Intelligent electronic scanning mirror
CN107240540A (en) * 2017-06-22 2017-10-10 聚束科技（北京）有限公司 A kind of method and SEM for observing non-conductive or conductive heterogeneous sample

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8633439B2 (en) * 2011-07-01 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for electromagnetic interference shielding for critical dimension-scanning electron microscope
CN110400279B (en) * 2019-08-01 2020-08-04 北京工业大学 Scanning image restoration method and system for scanning electron microscope at high temperature

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0769799B1 (en) 1995-10-19 2010-02-17 Hitachi, Ltd. Scanning electron microscope
DE10210045C1 (en) 2002-03-07 2003-05-08 Philips Corp Intellectual Pty Light source, used as a gas discharge lamp, comprises a discharge vessel filled with a gas and an electron beam source located in a vacuum or in a region of low pressure
US7223974B2 (en) * 2002-05-22 2007-05-29 Applied Materials, Israel, Ltd. Charged particle beam column and method for directing a charged particle beam

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102136406A (en) * 2011-01-28 2011-07-27 北京航空航天大学 Small condenser for electron microscope
CN102136406B (en) * 2011-01-28 2012-07-04 北京航空航天大学 Small condenser for electron microscope
CN103187223A (en) * 2011-12-27 2013-07-03 Fei公司 Drift control in charged particle beam system
CN104157539A (en) * 2014-07-18 2014-11-19 奉化市宇创产品设计有限公司 Intelligent electronic scanning mirror
CN107240540A (en) * 2017-06-22 2017-10-10 聚束科技（北京）有限公司 A kind of method and SEM for observing non-conductive or conductive heterogeneous sample

Also Published As

Publication number Publication date
TWI349948B (en) 2011-10-01
US20090057555A1 (en) 2009-03-05
CN101383261B (en) 2011-09-21
US7601955B2 (en) 2009-10-13
TW200912988A (en) 2009-03-16

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