CN101382811A - Current source stabilizing circuit - Google Patents
Current source stabilizing circuit Download PDFInfo
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- CN101382811A CN101382811A CNA200710149550XA CN200710149550A CN101382811A CN 101382811 A CN101382811 A CN 101382811A CN A200710149550X A CNA200710149550X A CN A200710149550XA CN 200710149550 A CN200710149550 A CN 200710149550A CN 101382811 A CN101382811 A CN 101382811A
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- current source
- circuit
- temperature
- stabilizing circuit
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Abstract
The invention relates to a current source stabilizing circuit which is used for stabilizing a current value output by a current source under the condition that temperature is changed. The current value of the current source can rise with the rising of temperature. The current source stabilizing circuit comprises a current source circuit used for providing current which rises with the rising of temperature, a correction circuit which is coupled with the current source circuit and used for providing input current which rises with the rising of temperature; wherein, the current of the current source circuit becomes the current of the current source after being subtracted by the input current; the current of the current source does not change with the temperature. The current source stabilizing circuit can effectively save cost and the space of hardware.
Description
Technical field
The present invention is relevant to a kind of current source stabilizing circuit, refers to a kind of current source stabilizing circuit that the constant current source electric current can raise with temperature that is used for especially.
Background technology
In integrated circuit (IC) design, need some reference voltages, reference current often and reference voltage and reference current are included in the bias voltage part of whole integrated circuit usually.In general application, the temperature of these bias voltages during normally with circuit working is that benchmark designs, and do not go to consider temperature variant relation especially.
Yet in fact; when circuit working; temperature when Shi Changhui changes circuit working because of the heat that electronic component produces in the variation of environment temperature or the circuit; circuit application when the change of temperature may influence conversion of signals; make the signal of conversion have the noise of temperature effect, for example analog-digital converter can be subjected to the influence of temperature noise.Also comparatively responsive to variation of temperature with the microprocessing systems of sensor in addition, the change of temperature also can influence the situation of this type of electronic circuit work.
General using produces the circuit relevant with temperature variation, can use bipolar junction transistor (Bipolar Junction Transistor usually; BJT), however at base stage and the emitter-base bandgap grading cross-pressure (V of BJT
BE) have the relation that becomes logarithm with collected current, and be subjected to influence of temperature variation.V
BECan be expressed as V with the relation of temperature
BE(H, I
C)=E
GE-H (E
GE-V
BEN)+V
TNHlog (I
C/ I
N)-η V
TNHlogH, wherein H=T/T
N, T is an absolute temperature, and T
NBe the temperature of normalization (normalized), common T
NCan be taken at the intermediate value of the temperature range of circuit working, be generally 300K (27 ℃).E
GERepresent V
BEAssumed value when absolute zero, greatly about 1.14V between the 1.19V.V
BENBe to work as the transistor junction temperature in specific T
NAnd I
CEqual a certain specific I
NThe time V
BEValue.V
TNBe thermal voltage V
TThe value of=kT/q under regular temperature.η is the curve constant, between 2 to 4.
Please refer to Fig. 1, Fig. 1 is descriptive equation formula V
BE(H, I
C)=E
GE-H (E
GE-V
BEN)+V
TNHlog (I
C/ I
N)-η V
TNThe performance of HlogH, as shown in Figure 1, when temperature T rises, V
BEDescend.And work as I
CWhen rising (increasing), V
BERise.This is the characteristic of BJT circuit, and with BJT be applied in usually with temperature raise and in the circuit that electric current improves with balanced balanced current, make the certain value that remains on that electric current tries one's best.
But the BJT circuit is owing to need to use diode, therefore expend higher hardware cost, and occupy bigger hardware space, and its inevasible consumption is arranged in the use, therefore how developing a kind of new current source stabilizing method becomes a problem that presses for solution at present.
Summary of the invention
Therefore, one of purpose of the present invention, be to provide a kind of current source stabilizing method, it is used for stablizing the current value that a current source is exported under the situation of temperature change, this current value of this current source can raise with temperature and rise, this method comprises: a correction circuit is provided, and an output current of this circuit raises with temperature and rises, and the coefficient that this electric current rises with the temperature rising equates with the coefficient that this current source rises with the temperature rising; One connection method is provided, subtracts each other with this output current before making this current value output of this current source; Wherein, after this current value of this current source and this output current subtract each other, during this current value of this current source output not along with temperature change.
The present invention also provides a kind of current source stabilizing circuit, it is used for stablizing the current value that a current source is exported under the situation of temperature change, this current value of this current source can raise with temperature and rise, this current source stabilizing circuit comprises: a current source circuit, it is used to provide an electric current, and this electric current raises with temperature and rises; One correction circuit is coupled to this current source circuit, is used to provide an input current, and this input current raises with temperature and rises; Wherein, become a current source current after this electric current of this current source circuit and this input current subtract each other, this current source current does not change with temperature change.
Current source stabilizing circuit of the present invention, this electric current of this current source circuit is identical with the coefficient that this input current rises with the temperature rising.
Current source stabilizing circuit of the present invention, this current source circuit are a self-bias mos field effect transistor Voltage Reference current source.
Current source stabilizing circuit of the present invention, this correction circuit are a start-up circuit.
Current source stabilizing circuit of the present invention, this correction circuit mainly is made of a plurality of metal-oxide semiconductor (MOS).
Current source stabilizing circuit of the present invention is by adjusting the number of these a plurality of metal-oxide semiconductor (MOS)s in this correction circuit, to adjust the coefficient that this input current raises and rises with temperature.
Current source stabilizing circuit of the present invention, this correction circuit does not comprise diode.
Current source stabilizing circuit of the present invention can effectively be saved cost and hardware space.
Description of drawings
Fig. 1 is descriptive equation formula V
BE(H, I
C)=E
GE-H (E
GE-V
BEN)+V
TNHlog (I
C/ I
N)-η V
TNThe performance of HlogH.
Fig. 2 is the current source stabilizing circuit structural drawing of preferred embodiment of the present invention.
Fig. 3 shows current value processing synoptic diagram of the present invention.
Embodiment
See also Fig. 2, Fig. 2 is the current source stabilizing circuit structural drawing of preferred embodiment of the present invention, as shown in Figure 2, current source stabilizing circuit 2 comprises a current source circuit 21 and a correction circuit 22, and current source circuit 21 comprises a PMOS (P-type mos) 211, a NMOS (N type metal oxide semiconductor) 212, first resistance 213, the 2nd PMOS214, the 2nd NMOS215 and earth terminal 216.
The source electrode of the one PMOS211 is coupled to the source electrode of the 2nd PMOS214 and the 3rd NMOS221, and grid is coupled to the grid of the 2nd PMOS214, and drain electrode is coupled to the source electrode of a NMOS212.The grid of the one NMOS212 is coupled to the drain electrode of the 2nd PMOS214 and the source electrode of the 2nd NMOS215, and drain electrode is coupled to an end of first resistance 213 and the grid of the 2nd NMOS215, and the other end of first resistance 213 is coupled to earth terminal 216.
The drain electrode of the 2nd PMOS214 is coupled to source electrode and the drain electrode of the 5th NMOS223 and the source electrode of the 6th NMOS224 of the 2nd NMOS215.The drain electrode of the 2nd NMOS215 is coupled to earth terminal 216.
The drain electrode of the 3rd NMOS221 is coupled to the source electrode of the 4th NMOS222, the drain electrode of the 4th NMOS222 is coupled to the source electrode of the 5th NMOS223, the drain electrode of the 5th NMOS223 is coupled to the source electrode of the 6th NMOS224, the drain electrode of the 6th NMOS224 is coupled to earth terminal 216, the gate interconnection of the grid of the 5th NMOS223 and the 6th NMOS224, and be coupled to the source electrode of the 3rd NMOS221, the 2nd PMOS214 and a PMOS211.
Wherein current source circuit 21 can be a self-bias mos field effect transistor Voltage Reference current source (self-biasing MOSFET Vt referencecurrent source), in order to provide an electric current as current source, correction circuit 22 can be start-up circuit (start up), input current is provided, utilize the mode that to be with (bandgap) reference voltage, the input current that utilizes correction circuit 22 to produce improves along with temperature and the characteristic that rises, and the electric current of current source circuit 21 is subtracted each other at the preceding and input current of input.Because can utilizing, a plurality of MOS in the correction circuit 22 increase or reduce MOS to change the method for current temperature coefficient, input current improved the coefficient adjustment rises with temperature identical for the coefficient that provides electric current to rise with the temperature raising with current source circuit 21, therefore after current source circuit 21 provides current value and input current value to subtract each other, the electric current of being exported will become a stable current value, and can not raise because of the raising of temperature, can be because of decrease of temperature does not descend yet, in output current, get rid of the labile factor of temperature and become more stable current source circuit.
Refer again to Fig. 3, it is to show current value processing synoptic diagram of the present invention, shown in the 3rd figure, the relation of current source circuit 21 current generated values and temperature is shown in Figure 31 as concerning, correction circuit 22 input current value that produces and temperature are shown in Figure 32 as concerning, wherein transverse axis is a temperature, the longitudinal axis is the current value size, concern that Figure 31 is identical with the coefficient of relationship of current value that concerns Figure 32 and temperature, promptly concern Figure 31 and concern that rate of curve is identical shown in Figure 32, therefore it is subtracted each other the Figure 33 that concerns of back current value of being exported for last current source stabilizing circuit 2 and temperature, in concerning Figure 33, current value can't change along with temperature, and becomes certain value.
In the correction circuit 22 of the present invention, the start-up circuit of forming for four NMOS in the preferred embodiment of lifting, but not as limit, current source circuit also is not limited to self-bias burning field and imitates the Voltage Reference current source.
Therefore the present invention does not use the diode that arrives commonly used in the BJT circuit owing to do not use traditional BJT circuit yet, can effectively save cost and hardware space.
The above only is preferred embodiment of the present invention; so it is not in order to limit scope of the present invention; any personnel that are familiar with this technology; without departing from the spirit and scope of the present invention; can do further improvement and variation on this basis, so the scope that claims were defined that protection scope of the present invention is worked as with the application is as the criterion.
Being simply described as follows of symbol in the accompanying drawing:
2: current source stabilizing circuit
21: current source circuit
211: the PMOS
212: the one NMOS
213: the first resistance
214: the two PMOS
215: the two NMOS
216: earth terminal
22: correction circuit
221: the three NMOS
222: the four NMOS
223: the five NMOS
224: the six NMOS
31: the graph of a relation of current source circuit 21 current generated values and temperature
32: correction circuit 22 input current value that produces and temperature relation figure
33: current value that current source stabilizing circuit 2 is exported and temperature relation figure
Claims (7)
1. a current source stabilizing circuit is characterized in that, it is used for stablizing the current value that a current source is exported under the situation of temperature change, and this current value of this current source can raise with temperature and rise, and this current source stabilizing circuit comprises:
One current source circuit, it is used to provide an electric current, and this electric current raises with temperature and rises;
One correction circuit is coupled to this current source circuit, is used to provide an input current, and this input current raises with temperature and rises;
Wherein, become a current source current after this electric current of this current source circuit and this input current subtract each other, this current source current does not change with temperature change.
2. current source stabilizing circuit according to claim 1 is characterized in that, this electric current of this current source circuit is identical with the coefficient that this input current rises with the temperature rising.
3. current source stabilizing circuit according to claim 1 is characterized in that, this current source circuit is a self-bias mos field effect transistor Voltage Reference current source.
4. current source stabilizing circuit according to claim 1 is characterized in that, this correction circuit is a start-up circuit.
5. current source stabilizing circuit according to claim 1 is characterized in that this correction circuit mainly is made of a plurality of metal-oxide semiconductor (MOS).
6. current source stabilizing circuit according to claim 5 is characterized in that, by adjusting the number of these a plurality of metal-oxide semiconductor (MOS)s in this correction circuit, to adjust the coefficient that this input current raises and rises with temperature.
7. current source stabilizing circuit according to claim 1 is characterized in that this correction circuit does not comprise diode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310062328.1A CN103149965B (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
| CNA200710149550XA CN101382811A (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710149550XA CN101382811A (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310062328.1A Division CN103149965B (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101382811A true CN101382811A (en) | 2009-03-11 |
Family
ID=40462686
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200710149550XA Pending CN101382811A (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
| CN201310062328.1A Active CN103149965B (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310062328.1A Active CN103149965B (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN101382811A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102508510A (en) * | 2011-12-26 | 2012-06-20 | 朱月林 | Single-chip ultra-high-voltage constant-current circuit |
| CN103294100A (en) * | 2013-06-01 | 2013-09-11 | 湘潭芯力特电子科技有限公司 | Reference current source circuit compensating resistor temperature drift coefficient |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0778509B1 (en) * | 1995-12-06 | 2002-05-02 | International Business Machines Corporation | Temperature compensated reference current generator with high TCR resistors |
| JP3022815B2 (en) * | 1997-07-24 | 2000-03-21 | 日本電気アイシーマイコンシステム株式会社 | Intermediate potential generation circuit |
| KR100605581B1 (en) * | 2004-12-28 | 2006-07-31 | 주식회사 하이닉스반도체 | Digital temperature sensing device using temperature character of contact resistance |
| US7224209B2 (en) * | 2005-03-03 | 2007-05-29 | Etron Technology, Inc. | Speed-up circuit for initiation of proportional to absolute temperature biasing circuits |
| CN100428105C (en) * | 2006-08-25 | 2008-10-22 | 清华大学 | High temp stability reference voltage source corrected by 1V power supply non-linear technology |
-
2007
- 2007-09-06 CN CNA200710149550XA patent/CN101382811A/en active Pending
- 2007-09-06 CN CN201310062328.1A patent/CN103149965B/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102508510A (en) * | 2011-12-26 | 2012-06-20 | 朱月林 | Single-chip ultra-high-voltage constant-current circuit |
| CN102508510B (en) * | 2011-12-26 | 2013-11-06 | 朱月林 | Single-chip ultra-high-voltage constant-current circuit |
| CN103294100A (en) * | 2013-06-01 | 2013-09-11 | 湘潭芯力特电子科技有限公司 | Reference current source circuit compensating resistor temperature drift coefficient |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103149965A (en) | 2013-06-12 |
| CN103149965B (en) | 2015-08-26 |
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Application publication date: 20090311 |