CN101382811A - Current Source Stabilization Circuit - Google Patents
Current Source Stabilization Circuit Download PDFInfo
- Publication number
- CN101382811A CN101382811A CNA200710149550XA CN200710149550A CN101382811A CN 101382811 A CN101382811 A CN 101382811A CN A200710149550X A CNA200710149550X A CN A200710149550XA CN 200710149550 A CN200710149550 A CN 200710149550A CN 101382811 A CN101382811 A CN 101382811A
- Authority
- CN
- China
- Prior art keywords
- current
- current source
- circuit
- temperature
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000006641 stabilisation Effects 0.000 title claims description 7
- 238000011105 stabilization Methods 0.000 title claims description 7
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 25
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000000630 rising effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Images
Landscapes
- Control Of Electrical Variables (AREA)
Abstract
Description
技术领域 technical field
本发明相关于一种电流源稳定电路,尤指一种用于稳定电流源电流会随温度升高而升高的电流源稳定电路。The present invention relates to a current source stabilizing circuit, in particular to a current source stabilizing circuit used for stabilizing a current source whose current increases with temperature.
背景技术 Background technique
在集成电路设计中,时常需要一些参考电压、参考电流、而参考电压和参考电流通常被包括在整个集成电路的偏压部分。在一般的应用中,这些偏压通常是以电路工作时的温度为基准来设计,而没有特别去考虑随温度变化的关系。In the design of integrated circuits, some reference voltages and reference currents are often required, and the reference voltages and reference currents are usually included in the bias voltage part of the entire integrated circuit. In general applications, these bias voltages are usually designed based on the operating temperature of the circuit, without special consideration of the relationship with temperature changes.
然而事实上,在电路工作时,时常会因为环境温度的变化或电路中电子元件产生的热量而改变电路工作时的温度,温度的改变可能会影响信号转换时的电路应用,使转换的信号带有温度影响的噪声,例如模拟数字转换器会受到温度噪声的影响。另外附有感测器的微处理系统对温度的变化也较为敏感,温度的改变也会影响此类电子电路工作的情形。However, in fact, when the circuit is working, the temperature of the circuit is often changed due to the change of the ambient temperature or the heat generated by the electronic components in the circuit. The temperature change may affect the circuit application when the signal is converted, making the converted signal with Noise with temperature effects, such as analog-to-digital converters are affected by temperature noise. In addition, the micro-processing system with sensors is also sensitive to temperature changes, and temperature changes will also affect the operation of such electronic circuits.
一般利用来产生和温度变化有关的电路,通常会使用双极结型晶体管(Bipolar Junction Transistor;BJT),然而在BJT的基极和射极跨压(VBE)具有和集极电流成对数的关系,并且受到温度变化的影响。VBE和温度的关系可表示为VBE(H,IC)=EGE-H(EGE-VBEN)+VTNHlog(IC/IN)-ηVTNHlogH,其中H=T/TN,T是绝对温度,而TN是正规化(normalized)的温度,通常TN会取在电路工作的温度范围的中间值,通常为300K(27℃)。EGE代表VBE在绝对零度时的假定值,大约在1.14V到1.19V之间。VBEN是当晶体管结温度在特定TN及IC等于某一特定IN时的VBE值。VTN是热电压VT=kT/q在正规化温度下的值。η为曲线常数,约在2到4之间。It is generally used to generate circuits related to temperature changes, and bipolar junction transistors (Bipolar Junction Transistor; BJT) are usually used. However, the base and emitter voltage (V BE ) of the BJT has a logarithm with the collector current relationship and is affected by temperature changes. The relationship between V BE and temperature can be expressed as V BE (H, I C )=E GE -H(E GE -V BEN )+V TN Hlog(I C / IN )-ηV TN HlogH, where H=T/ T N , T is the absolute temperature, and T N is the normalized temperature, usually T N will take the middle value of the temperature range in which the circuit works, usually 300K (27°C). E GE represents the assumed value of V BE at absolute zero, approximately between 1.14V and 1.19V. V BEN is the value of V BE when the transistor junction temperature is at a specific TN and IC is equal to a specific IN . V TN is the value of the thermal voltage V T =kT/q at normalized temperature. η is a constant of the curve, approximately between 2 and 4.
请参考图1,图1是描述方程式VBE(H,IC)=EGE-H(EGE-VBEN)+VTNHlog(IC/IN)-ηVTNHlogH的表现,如图1所示,当温度T上升时,VBE是下降的。而当IC上升(increasing)时,VBE是上升的。此为BJT电路的特性,而将BJT通常应用在随温度升高而电流提高的电路中以平衡电流,使电流尽量的保持在一定值。Please refer to Figure 1, Figure 1 is the performance of the description equation V BE (H, I C )=E GE -H(E GE -V BEN )+V TN Hlog(I C /I N )-ηV TN HlogH, as shown in the figure 1, when the temperature T rises, V BE drops. And when IC increases (increasing), V BE increases. This is the characteristic of the BJT circuit, and the BJT is usually used in a circuit in which the current increases as the temperature rises to balance the current and keep the current at a certain value as much as possible.
但BJT电路由于需要使用二极管,因此耗费较高的硬件成本,以及占有较大的硬件空间,在使用上有其无可避免的消耗,因此如何研发出一种新的电流源稳定方法成为目前迫切需要解决的一个课题。However, due to the need to use diodes, BJT circuits consume high hardware costs and occupy a large hardware space, which inevitably consumes them in use. Therefore, how to develop a new current source stabilization method has become an urgent need. A problem that needs to be solved.
发明内容 Contents of the invention
因此,本发明的目的之一,在于提供一种电流源稳定方法,其用于在温度改变的情况下稳定一电流源所输出的一电流值,该电流源的该电流值会随温度升高而上升,该方法包括:提供一修正电路,该电路的一输出电流随温度升高而上升,并且该电流随温度升高而上升的一系数与该电流源随温度升高而上升的一系数相等;提供一连接法,使该电流源的该电流值输出前与该输出电流相减;其中,该电流源的该电流值与该输出电流相减后,该电流源的该电流值输出时不随着温度改变。Therefore, one of the objects of the present invention is to provide a method for stabilizing a current source, which is used to stabilize a current value output by a current source when the temperature changes, and the current value of the current source will increase with temperature and rise, the method includes: providing a correction circuit, an output current of the circuit rises with temperature, and a coefficient of the current rise with temperature and a coefficient of the current source rise with temperature Equal; provide a connection method, so that the current value of the current source is subtracted from the output current before output; wherein, after the current value of the current source is subtracted from the output current, when the current value of the current source is output Does not change with temperature.
本发明还提供一种电流源稳定电路,其用于在温度改变的情况下稳定一电流源所输出的一电流值,该电流源的该电流值会随温度升高而上升,该电流源稳定电路包括:一电流源电路,其用于提供一电流,该电流随温度升高而上升;一修正电路,耦接于该电流源电路,用于提供一输入电流,该输入电流随温度升高而上升;其中,该电流源电路的该电流与该输入电流相减后成为一电流源电流,该电流源电流不随温度改变而变化。The present invention also provides a current source stabilizing circuit, which is used to stabilize a current value output by a current source when the temperature changes. The current value of the current source will increase as the temperature increases, and the current source is stable. The circuit includes: a current source circuit, which is used to provide a current, and the current increases with temperature; a correction circuit, coupled to the current source circuit, is used to provide an input current, and the input current increases with temperature and rise; wherein, the current of the current source circuit is subtracted from the input current to become a current source current, and the current source current does not change with temperature.
本发明所述的电流源稳定电路,该电流源电路的该电流与该输入电流随温度升高而上升的系数相同。In the current source stabilizing circuit of the present invention, the current of the current source circuit is the same as the coefficient of the input current rising with temperature.
本发明所述的电流源稳定电路,该电流源电路为一自偏金属氧化物半导体场效应晶体管电压参考电流源。According to the current source stabilizing circuit of the present invention, the current source circuit is a self-biased metal oxide semiconductor field effect transistor voltage reference current source.
本发明所述的电流源稳定电路,该修正电路为一启动电路。In the current source stabilizing circuit of the present invention, the correction circuit is a start-up circuit.
本发明所述的电流源稳定电路,该修正电路主要由多个金属氧化物半导体所构成。In the current source stabilizing circuit of the present invention, the correction circuit is mainly composed of a plurality of metal oxide semiconductors.
本发明所述的电流源稳定电路,通过调整该修正电路中的该多个金属氧化物半导体的数目,以调整该输入电流随温度升高而上升的系数。In the current source stabilizing circuit of the present invention, by adjusting the number of the plurality of metal oxide semiconductors in the correction circuit, the coefficient of the increase of the input current as the temperature rises is adjusted.
本发明所述的电流源稳定电路,该修正电路不包括二极管。In the current source stabilizing circuit of the present invention, the correction circuit does not include a diode.
本发明所述的电流源稳定电路,可以有效的节省成本以及硬件空间。The current source stabilizing circuit of the present invention can effectively save cost and hardware space.
附图说明 Description of drawings
图1是描述方程式VBE(H,IC)=EGE-H(EGE-VBEN)+VTNHlog(IC/IN)-ηVTNHlogH的表现。Fig. 1 is a representation describing the equation V BE (H, I C )=E GE -H(E GE -V BEN )+V TN Hlog(I C / IN )-ηV TN HlogH.
图2为本发明较佳实施例的电流源稳定电路结构图。FIG. 2 is a structure diagram of a current source stabilization circuit in a preferred embodiment of the present invention.
图3是显示本发明电流值处理示意图。Fig. 3 is a schematic diagram showing the current value processing of the present invention.
具体实施方式 Detailed ways
请参阅图2,图2为本发明较佳实施例的电流源稳定电路结构图,如图2所示,电流源稳定电路2包括一电流源电路21以及一修正电路22,电流源电路21包括第一PMOS(P型金属氧化物半导体)211、第一NMOS(N型金属氧化物半导体)212、第一电阻213、第二PMOS214、第二NMOS215和接地端216。Please refer to Fig. 2, Fig. 2 is the structural diagram of the current source stabilizing circuit of the preferred embodiment of the present invention, as shown in Fig. 2, the current
修正电路22包括第三NMOS221、第四NMOS222、第五NMOS223和第六NMOS224。The
第一PMOS211的源极耦接至第二PMOS214和第三NMOS221的源极,栅极耦接至第二PMOS214的栅极,漏极耦接至第一NMOS212的源极。第一NMOS212的栅极耦接至第二PMOS214的漏极以及第二NMOS215的源极,漏极耦接至第一电阻213的一端和第二NMOS215的栅极,第一电阻213的另一端耦接至接地端216。The source of the
第二PMOS214的漏极耦接至第二NMOS215的源极以及第五NMOS223的漏极和第六NMOS224的源极。第二NMOS215的漏极耦接至接地端216。The drain of the
第三NMOS221的漏极耦接至第四NMOS222的源极,第四NMOS222的漏极耦接至第五NMOS223的源极,第五NMOS223的漏极耦接至第六NMOS224的源极,第六NMOS224的漏极耦接至接地端216,第五NMOS223的栅极与第六NMOS224的栅极互连,并且耦接至第三NMOS221、第二PMOS214以及第一PMOS211的源极。The drain of the third NMOS221 is coupled to the source of the fourth NMOS222, the drain of the fourth NMOS222 is coupled to the source of the fifth NMOS223, the drain of the fifth NMOS223 is coupled to the source of the sixth NMOS224, and the sixth The drain of the
其中电流源电路21可为一自偏金属氧化物半导体场效应晶体管电压参考电流源(self-biasing MOSFET Vt referencecurrent source),用以提供一电流作为电流源,修正电路22可为启动电路(start up),提供输入电流,利用能带(bandgap)参考电压的方式,利用修正电路22产生的输入电流随着温度提高而上升的特性,将电流源电路21的电流在输入的前与输入电流相减。由于修正电路22中的多个MOS可以利用增加或减少MOS以改变电流温度系数的方法,将输入电流随温度提高而上升的系数调整为与电流源电路21提供电流随温度提高而上升的系数相同,因此在电流源电路21提供电流值与输入电流值相减后,所输出的电流将成为一个稳定的电流值,而不会因为温度的提高而升高,也不会因温度的下降而下降,在输出电流的时候排除温度的不稳定因素而成为更稳定的电流源电路。Wherein the
请再参考图3,其系显示本发明电流值处理示意图,如第三图所示,电流源电路21所产生电流值与温度的关系如关系图31所示,修正电路22所产生输入电流值与温度如关系图32所示,其中横轴为温度,纵轴为电流值大小,关系图31与关系图32的电流值和温度的关系系数相同,即关系图31与关系图32中所示曲线斜率相同,因此将其相减后为最后电流源稳定电路2所输出的电流值与温度的关系图33,在关系图33中,电流值并不会随着温度而改变,而成为一定值。Please refer to FIG. 3 again, which shows a schematic diagram of the current value processing of the present invention. As shown in the third figure, the relationship between the current value generated by the
本发明修正电路22中,所举较佳实施例中为四个NMOS组成的启动电路,但不以此为限,电流源电路也不局限于自偏金属氧化场效电压参考电流源。The correcting
本发明由于没有使用传统的BJT电路,因此也没有使用到BJT电路中常用到的二极管,可以有效的节省成本以及硬件空间。Since the present invention does not use the traditional BJT circuit, it does not use the diode commonly used in the BJT circuit, which can effectively save cost and hardware space.
以上所述仅为本发明较佳实施例,然其并非用以限定本发明的范围,任何熟悉本项技术的人员,在不脱离本发明的精神和范围内,可在此基础上做进一步的改进和变化,因此本发明的保护范围当以本申请的权利要求书所界定的范围为准。The above description is only a preferred embodiment of the present invention, but it is not intended to limit the scope of the present invention. Any person familiar with this technology can make further improvements on this basis without departing from the spirit and scope of the present invention. Improvements and changes, so the protection scope of the present invention should be defined by the claims of the present application.
附图中符号的简单说明如下:A brief description of the symbols in the drawings is as follows:
2:电流源稳定电路2: Current source stabilization circuit
21:电流源电路21: Current source circuit
211:第一PMOS211: First PMOS
212:第一NMOS212: First NMOS
213:第一电阻213: first resistance
214:第二PMOS214: Second PMOS
215:第二NMOS215: Second NMOS
216:接地端216: Ground terminal
22:修正电路22: Correction circuit
221:第三NMOS221: Third NMOS
222:第四NMOS222: Fourth NMOS
223:第五NMOS223: Fifth NMOS
224:第六NMOS224: Sixth NMOS
31:电流源电路21所产生电流值与温度的关系图31: The relationship between the current value and temperature generated by the
32:修正电路22所产生输入电流值与温度关系图32: The relationship between the input current value and temperature generated by the
33:电流源稳定电路2所输出的电流值与温度关系图33: The relationship between the current value output by the current
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310062328.1A CN103149965B (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
CNA200710149550XA CN101382811A (en) | 2007-09-06 | 2007-09-06 | Current Source Stabilization Circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA200710149550XA CN101382811A (en) | 2007-09-06 | 2007-09-06 | Current Source Stabilization Circuit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310062328.1A Division CN103149965B (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101382811A true CN101382811A (en) | 2009-03-11 |
Family
ID=40462686
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA200710149550XA Pending CN101382811A (en) | 2007-09-06 | 2007-09-06 | Current Source Stabilization Circuit |
CN201310062328.1A Active CN103149965B (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310062328.1A Active CN103149965B (en) | 2007-09-06 | 2007-09-06 | Current source stabilizing circuit |
Country Status (1)
Country | Link |
---|---|
CN (2) | CN101382811A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102508510A (en) * | 2011-12-26 | 2012-06-20 | 朱月林 | Single-chip ultra-high-voltage constant-current circuit |
CN103294100A (en) * | 2013-06-01 | 2013-09-11 | 湘潭芯力特电子科技有限公司 | Reference current source circuit compensating resistor temperature drift coefficient |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69526585D1 (en) * | 1995-12-06 | 2002-06-06 | Ibm | Temperature compensated reference current generator with resistors with large temperature coefficients |
JP3022815B2 (en) * | 1997-07-24 | 2000-03-21 | 日本電気アイシーマイコンシステム株式会社 | Intermediate potential generation circuit |
KR100605581B1 (en) * | 2004-12-28 | 2006-07-31 | 주식회사 하이닉스반도체 | Digital temperature sensor using temperature characteristic of contact resistance and self-refresh driving device using it |
US7224209B2 (en) * | 2005-03-03 | 2007-05-29 | Etron Technology, Inc. | Speed-up circuit for initiation of proportional to absolute temperature biasing circuits |
CN100428105C (en) * | 2006-08-25 | 2008-10-22 | 清华大学 | High temperature stable reference voltage source with 1V power supply nonlinearity correction |
-
2007
- 2007-09-06 CN CNA200710149550XA patent/CN101382811A/en active Pending
- 2007-09-06 CN CN201310062328.1A patent/CN103149965B/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102508510A (en) * | 2011-12-26 | 2012-06-20 | 朱月林 | Single-chip ultra-high-voltage constant-current circuit |
CN102508510B (en) * | 2011-12-26 | 2013-11-06 | 朱月林 | Single-chip ultra-high-voltage constant-current circuit |
CN103294100A (en) * | 2013-06-01 | 2013-09-11 | 湘潭芯力特电子科技有限公司 | Reference current source circuit compensating resistor temperature drift coefficient |
Also Published As
Publication number | Publication date |
---|---|
CN103149965A (en) | 2013-06-12 |
CN103149965B (en) | 2015-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8451571B2 (en) | Overheat protection circuit and power supply integrated circuit | |
US8749219B2 (en) | Current generating circuit | |
CN101101490A (en) | Device with temperature compensation | |
CN104967094B (en) | A kind of thermal-shutdown circuit | |
CN105974996B (en) | Reference voltage source | |
JP2010124408A (en) | Reference voltage generating circuit and bias circuit | |
CN110690864B (en) | Energy gap voltage reference circuit | |
JP2007305010A (en) | Reference voltage generation circuit | |
US7193402B2 (en) | Bandgap reference voltage circuit | |
TW201506577A (en) | Bandgap reference voltage circuit and electronic apparatus thereof | |
CN108363447B (en) | A Low Temperature Coefficient Full MOS Current Source Circuit With Process Compensation | |
US10423175B2 (en) | Method for providing a voltage reference at a present operating temperature in a circuit | |
TW202204906A (en) | Undervoltage detection circuit | |
CN214253044U (en) | Current source circuit and electronic equipment | |
CN103149965B (en) | Current source stabilizing circuit | |
CN105630063A (en) | Reference power supply generating circuit | |
CN115586809A (en) | An Exponential Temperature Compensation Bandgap Reference Voltage Source and Its Compensation Method | |
US7019508B2 (en) | Temperature compensated bias network | |
CN101382810A (en) | Current Source Stabilization Method | |
US10819335B2 (en) | Reference voltage circuit and power-on reset circuit | |
US8742746B1 (en) | Ultra low-noise true sub-volt band gap | |
CN113359933B (en) | Reference voltage generation circuit | |
CN111580437B (en) | Enabling control circuit and electronic equipment | |
US7750725B2 (en) | Stabilizing methods for current source | |
US7714639B2 (en) | Stabilizing methods for current source |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20090311 |