CN101382623A - Inclined plane receiving photoelectric detector with optical fiber positioning groove and manufacturing method of array thereof - Google Patents
Inclined plane receiving photoelectric detector with optical fiber positioning groove and manufacturing method of array thereof Download PDFInfo
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- CN101382623A CN101382623A CNA2007101215034A CN200710121503A CN101382623A CN 101382623 A CN101382623 A CN 101382623A CN A2007101215034 A CNA2007101215034 A CN A2007101215034A CN 200710121503 A CN200710121503 A CN 200710121503A CN 101382623 A CN101382623 A CN 101382623A
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- 239000013307 optical fiber Substances 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000835 fiber Substances 0.000 claims description 124
- 238000000034 method Methods 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 59
- 238000005260 corrosion Methods 0.000 claims description 35
- 230000007797 corrosion Effects 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000004891 communication Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 230000008901 benefit Effects 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
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Abstract
The invention relates to the technical field of optical fiber communication, and discloses a manufacturing method of an inclined plane receiving photoelectric detector with an optical fiber positioning groove. The invention also discloses a manufacturing method of the inclined plane receiving photoelectric detector array with the optical fiber positioning groove. The invention makes the alignment precision of the optical fiber and the SVPD in micron order, overcomes the drift problem of positioning precision, improves the reliability of positioning precision, reduces the difficulty of optical fiber alignment and positioning and reduces the cost of optical fiber alignment and positioning.
Description
Technical field
The present invention relates to technical field of optical fiber communication, relate to a kind of manufacture method of novel photoelectric-detection device, relate in particular to a kind of method for making that receives photodetector and array thereof with the inclined-plane of fiber orientation groove.
Background technology
Along with the develop rapidly of digital information process, supercomputer, server etc. constantly increase the demand of high capacity, high-speed data exchange.Optical fiber communication not only is widely used in the long haul communication, and between antenna for base station and control station, between the building internal server, between the rack, the short distance high-speed data communication field between the light back board also has a wide range of applications.The cost of forming the optical component of optical interconnection is the principal element of restriction optical fiber communication large-scale application, and wherein, a large portion of optical component cost is itself and the location of aiming at of optical fiber.The positioning accuracy request of optical fiber is very high, and its precision should be in micron dimension.
The fiber orientation method has usually: active aligning, packaging passive alignment, and both combinations.Active alignment methods is that light transmits and receives simultaneously and works in alignment procedures, adjusts optical component, the monitoring light signal, light path is aimed at and is reached the optimum position when light signal is the strongest, advantage is a light path alignment quality height, and shortcoming is that efficient is extremely low, optical module cost height.The packaging passive alignment method is to utilize the fiber orientation device to realize aiming at of optical fiber and photoelectric device, and advantage is the efficient height, and cost is low, and shortcoming is the accurate alignment devices of needs, is difficult to guarantee coupling efficiency.
The packaging passive alignment method is because its advantage aspect low-cost is subjected to domestic and international researcher's common concern.In the prior art, V-shaped groove is applied to hold and positioning optical waveguides at large; In recent years, occur fiber orientation function and the single chip integrated trend of photoelectric component.For example described in the following prior art patent documentation:
US 6,187,515B1 (Dean Tran etc., 02/13/2001) the optics integrated micro substrate of a kind of accurate positioning optical waveguides and optical device has been described, its implementation procedure is to utilize anisotropic corrosive property to obtain a groove that connects substrate on the front of III-V family material substrate, the sidewall of groove is an inclined-plane relevant with corrosive property, is used for reflected light signal; On the direction of the back side of substrate, erode away the fiber orientation groove, be used for positioning optical waveguides perpendicular to front groove sidewall, and accurate aligning of realization and front groove sidewall.The substrate back-off is welded on the optical device, and substrate provides the function of optical fiber fixed function and light signal 90 degree refractions.
CN 1455882A (wears Vylor Si etc., 11/12/2003) a kind of monolithic semiconductor photo-coupler that comprises the optical fiber align groove has been described, it makes the groove that is used to hold and aim at optical fiber on a face of Semiconductor substrate, the vertical wall that in the substrate semiconductor material, prepares given thickness in the groove extension transverse to groove, form different electrical characteristics district by doping in the wall, p type doped region, intrinsic semiconductor regions and n type doped region form the p-i-n photo-detector, when optical fiber was placed into groove, it was directly aimed at photo-detector.
Summary of the invention
(1) technical matters that will solve
In view of this, one object of the present invention is to provide a kind of method for making that receives photodetector (SVPD) with the inclined-plane of fiber orientation groove, the alignment precision that makes optical fiber and SVPD is in micron dimension, overcome the drifting problem of bearing accuracy, improve the reliability of bearing accuracy, and reduce the difficulty of optical fiber align location, reduce the optical fiber align positioning cost.
Another object of the present invention is to provide a kind of method for making that receives photodetector array with the inclined-plane of fiber orientation groove, the alignment precision that makes optical fiber and SVPD is in micron dimension, overcome the drifting problem of bearing accuracy, improve the reliability of bearing accuracy, and reduce the difficulty of optical fiber align location, reduce the optical fiber align positioning cost.
(2) technical scheme
For reaching an above-mentioned purpose, the invention provides a kind of method for making that receives photodetector with the inclined-plane of fiber orientation groove, this method increases fiber orientation groove corrosion technology in the manufacturing process of inclined-plane reception photodetector SVPD, on the direction of SVPD active area, corrode Semiconductor substrate in the relative side of SVPD and be formed for holding the fiber orientation groove of aiming at optical fiber, fiber orientation groove and SVPD are become one, and the active area center of SVPD is accurately aimed at the center that is positioned at the optical fiber of fiber orientation groove.
In the such scheme, described fiber orientation groove corrosion technology is carried out after SVPD element manufacturing operation is finished, and perhaps carries out after the etching tank technology of SVPD is finished.
In the such scheme, the etchant solution system of described fiber orientation groove corrosion process using comprises: H
2SO
4-H
2O
2-H
2The O system, H
3PO
4-H
2O
2-H
2The O system, HCl-H
2O
2-H
2O system or NH
4OH-H
2O
2-H
2The O system.
In the such scheme, described fiber orientation groove corrosion process using wet corrosion technique utilizes the anisotropic corrosive property of Semiconductor substrate, with SVPD inclined-plane opposing vertical direction on corrosion form and fall the corrosion cross section of trapezoidal or U type, form the fiber orientation groove, to hold aligning optical fiber.
In the such scheme, the corrosion cross section of described fiber orientation groove is for falling trapezoidal or the U type, by employed etchant solution component and proportioning decision; The degree of depth of described fiber orientation groove is controlled by etching time, and by selective etching solution system and proportioning, the control etching time is controlled the degree of depth of fiber orientation groove, makes the centrally aligned SVPD of optical fiber receive the center of active area; The A/F of described fiber orientation groove is by the sideetching speed decision of etching mask window width and corrosive liquid.
In the such scheme, described fiber orientation groove adopts ultra-violet curing glue when fixed fiber, or adopts the substrate of band V-shaped groove to fix from the top of optical fiber, or adopts above-mentioned two kinds of fixing means combinations.
In the such scheme, described optical fiber is single-mode fiber, or is multimode optical fiber, is the flat section that direct cutting optical fibre forms towards the fiber end face of SVPD, or the convex lens end face that forms through melt process, or through drawing awl to handle the tip surface that forms.
In the such scheme, described semiconductor substrate materials is GaAs or InP, and the conduction type of substrate is N type or semi-insulating type.
In the such scheme, when the conduction type of described Semiconductor substrate was the N type, the device of SVPD was a upper surface single electrode form; When the conduction type of described Semiconductor substrate was semi-insulating type, the device of SVPD was a upper surface bipolar electrode form.
For reaching above-mentioned another purpose, the invention provides a kind of method for making that receives photodetector array with the inclined-plane of fiber orientation groove, it is characterized in that, this method with the SVPD of a fiber orientation groove as a detector cells, the detector cells of some formed form the inclined-plane together and receive photodetector array.
In the such scheme, the number of described detector cells is 4～12.
In the such scheme, the substrate that described inclined-plane receives photodetector array is the SI substrate, is mesa-isolated between the detector cells.
In the such scheme, the substrate that described inclined-plane receives photodetector array is a N type substrate, between the detector cells except that mesa-isolated, between adjacent detector, process an isolation channel by corrosion or mechanical scribing, mesa-isolated and isolation channel isolation combine, avoid disturbing mutually between the array element, improve device performance.
In the such scheme, the optical fiber that described inclined-plane reception photodetector array uses is simple optical fiber or fibre ribbon, the fixed form of optical fiber or fibre ribbon adopts ultra-violet curing glue, or adopts the substrate of band V-shaped groove to fix from the top of optical fiber or fibre ribbon, or adopts above-mentioned two kinds of fixing means combinations.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, the SVPD of this band fiber orientation groove provided by the invention and the method for making of array thereof, in the monolithic detector that makes, integrated optical fiber align detent and inclined-plane receive photodetector, in the time of in optical fiber is placed into groove, can realize the direct aligning of optical fiber and SVPD, alignment precision is in micron dimension.
2, the SVPD of this band fiber orientation groove provided by the invention and the method for making of array thereof can reduce the difficulty of optical fiber align location greatly, reduce the optical fiber align positioning cost; And, because fiber orientation structure and photovalve are single chip integrated, therefore there is not the drifting problem of bearing accuracy, improved the reliability of bearing accuracy greatly.
3, the SVPD of this band fiber orientation groove provided by the invention and the method for making of array thereof, the manufacture craft of fiber orientation groove and the manufacture craft of SVPD are integrated, are suitable for extensive manufacturing, and the detector array that is made into the SVPD of band fiber orientation groove.
Description of drawings
Fig. 1 is an III-V family Semiconductor substrate anisotropic etch characteristic synoptic diagram;
Fig. 2 is the structural representation of the SVPD of band fiber orientation groove provided by the invention;
Fig. 3 is the cross-sectional view of the SVPD of band fiber orientation groove shown in Figure 2;
Fig. 4 is the synoptic diagram of the detector array monolithic of the SVPD of band fiber orientation groove;
Fig. 5 is the fixing synoptic diagram of the optical fiber of the detector array monolithic of the SVPD of band fiber orientation groove;
Fig. 6 is a process chart of making the inclined-plane reception photodetector of band fiber orientation groove according to first embodiment of the invention;
Fig. 7 is a process chart of making the inclined-plane reception photodetector of band fiber orientation groove according to second embodiment of the invention;
Fig. 8 is a method flow diagram of making the inclined-plane reception photodetector of band fiber orientation groove according to the embodiment of the invention;
Fig. 9 is a process chart of making the inclined-plane reception photodetector of band fiber orientation groove according to third embodiment of the invention;
Figure 10 is a process chart of making the inclined-plane reception photodetector of band fiber orientation groove according to four embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The inclined-plane of this band fiber orientation groove provided by the invention receives the method for making of photodetector, in the manufacturing process of inclined-plane reception photodetector (SVPD), increase fiber orientation groove corrosion technology, on the direction of SVPD active area, corrode Semiconductor substrate in the relative side of SVPD and form the fiber orientation groove, fiber orientation groove and SVPD are become one, and the active area center of SVPD is accurately aimed at the center that is positioned at the optical fiber of fiber orientation groove.
Fiber orientation groove corrosion technology can be closelyed follow after the etching tank technology of SVPD, and then finishes other production process of SVPD; Perhaps after SVPD element manufacturing operation is all finished, carry out the corrosion process of fiber orientation groove again.The fiber orientation groove be produced on same of SVPD in, and aim at light-receiving active area direction towards SVPD.
Fiber orientation groove corrosion process using wet corrosion technique utilizes the anisotropic corrosive property of Semiconductor substrate, with SVPD inclined-plane opposing vertical direction on corrosion form and fall the corrosion cross section of trapezoidal or U type, form the fiber orientation groove, to hold aligning optical fiber.
The etchant solution system that the locating slot etching process can be selected comprises: H
2SO
4-H
2O
2-H
2The O system, H
3PO
4-H
2O
2-H
2The O system, HCl-H
2O
2-H
2O system, and NH
4OH-H
2O
2-H
2The O system.With SVPD inclined-plane opposing vertical direction on the corrosion cross section for falling trapezoidal or the U type, to hold aligning optical fiber.The corrosion cross section of described fiber orientation groove is specially down trapezoidal or is the U type, by employed etchant solution component and proportioning decision; The degree of depth of described fiber orientation groove is controlled by etching time, and by selective etching solution system and proportioning, the control etching time is controlled the degree of depth of fiber orientation groove, makes the centrally aligned SVPD of optical fiber receive the center of active area; The A/F of described fiber orientation groove is by the sideetching speed decision of etching mask window width and corrosive liquid, and the width of fiber orientation groove will be large enough to hold optical fiber.
The fiber orientation groove can adopt ultra-violet curing glue when fixed fiber, or adopts the substrate of band V-shaped groove to fix from the top of optical fiber, or adopts above-mentioned two kinds of fixing means combinations.Optical fiber can be single-mode fiber or multimode optical fiber, is the flat section that direct cutting optical fibre forms towards the fiber end face of SVPD, or the convex lens end face that forms through melt process, or through drawing awl to handle the tip surface that forms.
The present invention is mutually integrated with the manufacture craft of SVPD with the etching process of fiber orientation groove, and the SVPD device monolithic that is made comprises Semiconductor substrate, fiber orientation groove and SVPD.SVPD is that the light-receiving active area is positioned at the photodetector on the inclined-plane, and the light-receiving active area of SVPD is by epitaxially grown p-i-n panel detector structure.Semiconductor substrate materials, be the backing material of SVPD, can be GaAs substrate or InP substrate, the conduction type of substrate can be N type substrate or SI (semi-insulating) type substrate, when the conduction type of described Semiconductor substrate was the N type, the device of SVPD was a upper surface single electrode form; When the conduction type of described Semiconductor substrate was semi-insulating type, the device of SVPD was a upper surface bipolar electrode form.
The inclined-plane of the band fiber orientation groove that provides based on the invention described above receives the method for making of photodetector, the present invention also provides a kind of method for making that receives photodetector array with the inclined-plane of fiber orientation groove, this method with the SVPD of a fiber orientation groove as a detector cells, the detector cells of some formed form the inclined-plane together and receive photodetector array.The number of detector cells is generally 4～12.To the detector array monolithic, the substrate first-selection is the SI substrate, is mesa-isolated between the detector cells; To N type substrate, except that mesa-isolated, between adjacent detector, process an isolation channel between the detector cells by corrosion or mechanical scribing, mesa-isolated and isolation channel isolation combine, and to avoid disturbing mutually between the array element, improve device performance.
The optical fiber that detector array elements is used can be simple optical fiber or fibre ribbon, the fixed form of optical fiber or fibre ribbon can be identical with the optical fiber fixing means of the SVPD of single band fiber orientation groove, can adopt ultra-violet curing glue, or adopt the substrate of band V-shaped groove to fix, or adopt above-mentioned two kinds of fixing means combinations from the top of optical fiber or fibre ribbon.
Below in conjunction with accompanying drawing, advantage of the present invention, feature and application are further explained.
Accompanying drawing 1 is an III-V family Semiconductor substrate anisotropic etch characteristic synoptic diagram.
To the III-V family Semiconductor substrate sheet 101 in (100) crystal orientation, on the edge
The cross section of direction etching tank is dovetail groove 103, the edge
The cross section of direction etching tank is a V-shaped groove 102.
Accompanying drawing 2 is synoptic diagram that the inclined-plane of band fiber orientation groove receives photodetector (SVPD).
Accompanying drawing 3 is diagrammatic cross-sections of the SVPD of band fiber orientation groove.
The depth H 1 of fiber orientation groove will make center and the centrally aligned of light-receiving active area, the i.e. H1=D1/2+H0/2 of the optical fiber that is fixed therein.The width W of fiber orientation groove is greater than the diameter D1 of optical fiber, to place receiving optical fiber.
Accompanying drawing 4 is synoptic diagram of detector array monolithic of the SVPD of band fiber orientation groove.
Its SVPD that serves as reasons several band fiber orientation grooves forms a detector array monolithic 401, and the number of unit of array is 4, aims at when the array monolithic can be realized detector array with fiber array.
Accompanying drawing 5 is fixing synoptic diagram of optical fiber of detector array monolithic of the SVPD of band fiber orientation groove.
Optical fiber in the detector array monolithic 401 of the SVPD of band fiber orientation groove adopts the substrate 501 of band V-shaped groove fixing.
Below in conjunction with specific embodiment, the method for the present invention being made the inclined-plane reception photodetector of band fiber orientation groove further describes.
(1) a kind of is to reserve fiber orientation groove zone, and after finishing all positive technologies, independent step corrosion forms the fiber orientation groove, and then finishes remaining manufacture craft of SVPD.
For N type substrate, after finishing all positive technologies, promptly finish after " P type ohmic metallization " technology, carry out before " thinning back side " technology, carry out the corrosion of fiber orientation groove, finish back process afterwards again, the inclined-plane of finishing band fiber orientation groove receives the manufacturing of photodetector or array.Concrete process chart can be with reference to Fig. 6, and Fig. 6 shows the process chart of making the inclined-plane reception photodetector of band fiber orientation groove according to first embodiment of the invention.
For semi-insulating type substrate, also be after finishing all positive technologies, before " thinning back side " technology, carry out the corrosion of fiber orientation groove, carry out thinning back side afterwards, the inclined-plane of finishing band fiber orientation groove receives the manufacturing of photodetector or array.Concrete process chart can be with reference to Fig. 7, and Fig. 7 shows the process chart of making the inclined-plane reception photodetector of band fiber orientation groove according to second embodiment of the invention.
(2) another kind is after the corrosion of finishing SVPD deep trouth inclined-plane, carries out the corrosion of fiber orientation groove, and then carries out remaining manufacture craft of SVPD.
This kind method only is after " deep trouth corrosion " step to the influence of N type or two kinds of different substrates of semi-insulating type, add a step " fiber orientation groove corrosion ", be exactly remaining technology then: epitaxial material growth, microelectronic technique manufacturing, the inclined-plane that forms band fiber orientation groove receives photodetector or array.The concrete grammar process flow diagram can be with reference to Fig. 8, and Fig. 8 shows the method flow diagram of making the inclined-plane reception photodetector of band fiber orientation groove according to the embodiment of the invention.
For N type substrate, concrete process chart can be with reference to Fig. 9, and Fig. 9 shows the process chart of making the inclined-plane reception photodetector of band fiber orientation groove according to third embodiment of the invention.
For semi-insulating type substrate, concrete process chart can be with reference to Figure 10, and Figure 10 shows the process chart of making the inclined-plane reception photodetector of band fiber orientation groove according to four embodiment of the invention.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (14)
1, a kind of method for making that receives photodetector with the inclined-plane of fiber orientation groove, it is characterized in that, this method increases fiber orientation groove corrosion technology in the manufacturing process of inclined-plane reception photodetector SVPD, on the direction of SVPD active area, corrode Semiconductor substrate in the relative side of SVPD and be formed for holding the fiber orientation groove of aiming at optical fiber, fiber orientation groove and SVPD are become one, and the active area center of SVPD is accurately aimed at the center that is positioned at the optical fiber of fiber orientation groove.
2, the inclined-plane of band fiber orientation groove according to claim 1 receives the method for making of photodetector, it is characterized in that, described fiber orientation groove corrosion technology is carried out after SVPD element manufacturing operation is finished, and perhaps carries out after the etching tank technology of SVPD is finished.
3, the inclined-plane of band fiber orientation groove according to claim 1 receives the method for making of photodetector, it is characterized in that the etchant solution system of described fiber orientation groove corrosion process using comprises: H
2SO
4-H
2O
2-H
2The O system, H
3PO
4-H
2O
2-H
2The O system, HCl-H
2O
2-H
2O system or NH
4OH-H
2O
2-H
2The O system.
4, the inclined-plane of band fiber orientation groove according to claim 1 receives the method for making of photodetector, it is characterized in that, described fiber orientation groove corrosion process using wet corrosion technique, utilize the anisotropic corrosive property of Semiconductor substrate, with SVPD inclined-plane opposing vertical direction on corrosion form the corrosion cross section of trapezoidal or U type, form the fiber orientation groove, to hold aligning optical fiber.
5, the inclined-plane of band fiber orientation groove according to claim 4 receives the method for making of photodetector, it is characterized in that, the corrosion cross section of described fiber orientation groove is for falling trapezoidal or the U type, by employed etchant solution component and proportioning decision; The degree of depth of described fiber orientation groove is controlled by etching time, and by selective etching solution system and proportioning, the control etching time is controlled the degree of depth of fiber orientation groove, makes the centrally aligned SVPD of optical fiber receive the center of active area; The A/F of described fiber orientation groove is by the sideetching speed decision of etching mask window width and corrosive liquid.
6, the inclined-plane of band fiber orientation groove according to claim 4 receives the method for making of photodetector, it is characterized in that, described fiber orientation groove adopts ultra-violet curing glue when fixed fiber, or adopt the substrate of band V-shaped groove to fix, or adopt above-mentioned two kinds of fixing means combinations from the top of optical fiber.
7, the inclined-plane of band fiber orientation groove according to claim 1 receives the method for making of photodetector, it is characterized in that, described optical fiber is single-mode fiber, or be multimode optical fiber, fiber end face towards SVPD is the flat section that direct cutting optical fibre forms, or the convex lens end face of process melt process formation, or through drawing awl to handle the tip surface of formation.
8, the inclined-plane of band fiber orientation groove according to claim 1 receives the method for making of photodetector, it is characterized in that described semiconductor substrate materials is GaAs or InP, and the conduction type of substrate is N type or semi-insulating type.
9, the inclined-plane of band fiber orientation groove according to claim 8 receives the method for making of photodetector, it is characterized in that when the conduction type of described Semiconductor substrate was the N type, the device of SVPD was a upper surface single electrode form; When the conduction type of described Semiconductor substrate was semi-insulating type, the device of SVPD was a upper surface bipolar electrode form.
10, a kind of method for making that receives photodetector array with the inclined-plane of fiber orientation groove, it is characterized in that, this method with the SVPD of a fiber orientation groove as a detector cells, the detector cells of some formed form the inclined-plane together and receive photodetector array.
11, the inclined-plane of band fiber orientation groove according to claim 10 receives the method for making of photodetector array, it is characterized in that the number of described detector cells is 4～12.
12, the inclined-plane of band fiber orientation groove according to claim 10 receives the method for making of photodetector array, it is characterized in that, the substrate that described inclined-plane receives photodetector array is the SI substrate, is mesa-isolated between the detector cells.
13, the inclined-plane of band fiber orientation groove according to claim 10 receives the method for making of photodetector array, it is characterized in that, the substrate that described inclined-plane receives photodetector array is a N type substrate, between the detector cells except that mesa-isolated, between adjacent detector, process an isolation channel by corrosion or mechanical scribing, mesa-isolated and isolation channel isolation combine, and avoid disturbing mutually between the array element, improve device performance.
14, the inclined-plane of band fiber orientation groove according to claim 10 receives the method for making of photodetector array, it is characterized in that, the optical fiber that described inclined-plane reception photodetector array uses is simple optical fiber or fibre ribbon, the fixed form of optical fiber or fibre ribbon adopts ultra-violet curing glue, or adopt the substrate of band V-shaped groove to fix, or adopt above-mentioned two kinds of fixing means combinations from the top of optical fiber or fibre ribbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101215034A CN101382623A (en) | 2007-09-07 | 2007-09-07 | Inclined plane receiving photoelectric detector with optical fiber positioning groove and manufacturing method of array thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101215034A CN101382623A (en) | 2007-09-07 | 2007-09-07 | Inclined plane receiving photoelectric detector with optical fiber positioning groove and manufacturing method of array thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102043199A (en) * | 2009-10-14 | 2011-05-04 | 日东电工株式会社 | Method of manufacturing optical sensor module and optical sensor module obtained thereby |
| CN101907753B (en) * | 2009-06-03 | 2012-04-25 | 中国科学院微电子研究所 | Multi-path parallel photoelectric module assembling method |
| CN103217750A (en) * | 2012-01-19 | 2013-07-24 | 环隆科技股份有限公司 | Optical mechanical assembly and photoelectric packaging |
| CN110520772A (en) * | 2017-02-23 | 2019-11-29 | 埃亚尔实验室公司 | The device and associated method connected for optical fiber to photon chip |
-
2007
- 2007-09-07 CN CNA2007101215034A patent/CN101382623A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101907753B (en) * | 2009-06-03 | 2012-04-25 | 中国科学院微电子研究所 | Multi-path parallel photoelectric module assembling method |
| CN102043199A (en) * | 2009-10-14 | 2011-05-04 | 日东电工株式会社 | Method of manufacturing optical sensor module and optical sensor module obtained thereby |
| CN103217750A (en) * | 2012-01-19 | 2013-07-24 | 环隆科技股份有限公司 | Optical mechanical assembly and photoelectric packaging |
| CN110520772A (en) * | 2017-02-23 | 2019-11-29 | 埃亚尔实验室公司 | The device and associated method connected for optical fiber to photon chip |
| CN110520772B (en) * | 2017-02-23 | 2021-09-07 | 埃亚尔实验室公司 | Apparatus for fiber-to-photonic chip connection and associated methods |
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