CN101378627A - Method for forming conductive line on an insulated heat-conducting metal substrate by vacuum splashing and plating - Google Patents
Method for forming conductive line on an insulated heat-conducting metal substrate by vacuum splashing and plating Download PDFInfo
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- CN101378627A CN101378627A CNA2007101313713A CN200710131371A CN101378627A CN 101378627 A CN101378627 A CN 101378627A CN A2007101313713 A CNA2007101313713 A CN A2007101313713A CN 200710131371 A CN200710131371 A CN 200710131371A CN 101378627 A CN101378627 A CN 101378627A
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- metal substrate
- insulated heat
- conducting metal
- substrate
- vacuum
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Abstract
The invention provides a method used for vacuum sputtering forming a conductive wire on an insulated heat-conducted metal substrate; the method comprises the steps as follows: (1) an insulated heat-conducted metal substrate is provided; (2) the substrate is arranged into a vacuum chamber, conductive layer targets are bombarded by plasma so as to lead the surface composition of the targets to be sputtered out in the form of atom and deposited on the surface of the substrate to form a conductive layer; and (3) the conductive layer outside the circuit diagram is removed by etching by virtue of a circuit diagram of the anti-etching ink transfer design. The method combines the vacuum sputtering technique with the etching technique to form the conductive wire, and has little chemical solution residues and relative environment-protective process.
Description
[technical field]
The present invention is a kind of method that forms the conducting wire on insulated substrate, particularly adopts vacuum splashing and plating technology to form the method for conducting wire on insulated heat-conducting metal substrate.
[background technology]
Tradition insulating heat-conductive substrate, as FR4 printed circuit board (PCB) (PCB), thermal conductivity (K) is about 0.36W/mK, its shortcoming is that hot property is relatively poor, and the conducting wire preparation method is for to spray conductive paint in regular turn on traditional insulating heat-conductive substrate on plastic base, and electroless copper etches circuit printed foil circuit again, wherein the shortcoming of electroless copper is to have chemical solution residual in the processing procedure, and environment is polluted.
For improving heat-conductive characteristic, industry proposes a kind of insulated heat-conducting metal substrate, the employing metal is a base material, utilization anodic oxidation, differential arc oxidation, vacuum splashing and plating or PCVD technology generate the metal oxide of insulating properties on this base material, again in conjunction with the high-heat-conductivity glue coating, to obtain high thermal conductivity, insulating properties and low-expansion insulated heat-conducting metal substrate.
Have not yet to see and on insulated heat-conducting metal substrate, directly adopt the vacuum splashing and plating mode to make the method for conducting wire.
[summary of the invention]
The object of the invention is to provide the method for vacuum splashing and plating formation conducting wire on a kind of insulated heat-conducting metal substrate, less contaminated environment.
For reaching above-mentioned purpose, vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate of the present invention, and may further comprise the steps: (1) provides an insulated heat-conducting metal substrate; (2) this substrate is inserted a vacuum chamber, utilize plasma bombardment conductive layer target, and this target material surface component is sputtered out with atomic form, be deposited on substrate surface and form conductive layer; (3) shift the circuit diagram that designs with anti-etching printing ink, the foregoing circuit figure conductive layer of part is in addition sloughed in etching.
Compared with prior art, the present invention adopts the combination of vacuum splashing and plating and etching technique to form the conducting wire, and less use chemical solution is handled, and is residual also few, relatively environmental protection of technology.
[embodiment]
The method of vacuum splashing and plating formation conducting wire is as follows on the insulated heat-conducting metal substrate of the present invention:
1, provides an insulated substrate, this insulated substrate comprises ambroin substrate and insulated heat-conducting metal substrate, in the present embodiment, for guaranteeing that heat conductivility well adopts insulated heat-conducting metal substrate, this insulated heat-conducting metal substrate is a base material with magnesium alloy, aluminium alloy, copper or stainless steel, and the combination of this base material utilization anodic oxidation, differential arc oxidation, vacuum splashing and plating or PCVD technology and high-heat-conductivity glue coating is prepared from.
2, vacuum splashing and plating conductive layer specifically comprises two steps:
(2-1) jet-plating metallization copper conductive layer
This substrate is inserted a vacuum chamber, and the vacuum degree of this vacuum chamber is at least 10
-5Torr feeds argon gas and keeps vacuum degree in 1～3x10
-3Torr is an anode with this insulated heat-conducting metal substrate, and the copper target is a negative electrode, and substrate back bias voltage-300～-600V, anodic current density 0.1～1W/cm
2, utilize plasma bombardment copper target, and this target material surface component is sputtered out with atomic form, being deposited on substrate surface formation thickness is the copper film of 0.5～5 μ m.
(2-2) sputter overcoat
This substrate is inserted another vacuum chamber, feed argon gas and keep vacuum degree in 1～3x10
-3Torr is an anode with this insulated heat-conducting metal substrate, and stainless target is a negative electrode, and anodic current density is at 0.1～1W/cm
2, utilize the plasma bombardment target, and this target material surface component is sputtered out with atomic form, being deposited on substrate surface formation thickness is the stainless steel membrane of 0.1～0.3 μ m, as the protective layer that prevents that copper film is oxidized.
3, circuit is made
Adopt the heat fixed type ink of printing etch-resistance or the ultraviolet curable ink development of exposure etch-resistance to shift the circuit diagram of design on above-mentioned overcoat, 30～50 ℃ of following etchings 5～20 seconds, slough the conductive layer and the overcoat of part beyond the foregoing circuit figure, what then stay is conducting wire on the insulated substrate.
Etching can be adopted wet etching or dry ecthing, wet etching prescription wherein: ferric trichloride 400～600g/L, hydrochloric acid 2～5g/L, ammonium acid fluoride 1～2g/L, sulphur urine 0.5% (mass ratio), certainly, also can comprise etching promoter and regenerative agent 2～5g/L, in the present embodiment, this etching promoter and regenerative agent are hydrogen peroxide.
Claims (10)
1, the method for vacuum splashing and plating formation conducting wire on a kind of insulated heat-conducting metal substrate is characterized in that: comprise the following steps:
(1) provides an insulated heat-conducting metal substrate;
(2) this substrate is inserted a vacuum chamber, utilize plasma bombardment conductive layer target, and this target material surface component is sputtered out with atomic form, be deposited on substrate surface and form conductive layer;
(3) shift the circuit diagram that designs with anti-etching printing ink, the foregoing circuit figure conductive layer of part is in addition sloughed in etching.
2, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate as claimed in claim 1, it is characterized in that: the vacuum degree of vacuum chamber is at least 10 in the step (2)
-5Torr feeds argon gas and maintains 1～3x10
-3Torr, and be anode with this insulated heat-conducting metal substrate, the conductive layer target is a negative electrode, substrate back bias voltage-300～-600V, anodic current density 0.1～1W/cm
2, and conductive layer thickness 0.5～5 μ m.
3, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate as claimed in claim 1 or 2, it is characterized in that: step (2) is further comprising the steps of:
This insulated substrate is inserted second vacuum chamber, utilize plasma bombardment overcoat target, and this target material surface component is sputtered out with atomic form, be deposited on substrate surface and form overcoat, and overcoat thickness 0.1～0.3 μ m.
4, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate as claimed in claim 3, it is characterized in that: this second vacuum chamber feeds argon gas and maintains 1～3x10
-3Torr, and be anode with this insulated heat-conducting metal substrate, the overcoat target is a negative electrode, anodic current density is at 0.1～1W/cm
2
5, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate as claimed in claim 4, it is characterized in that: this conductive layer target is a copper, this overcoat target is a stainless steel.
6, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate as claimed in claim 1, it is characterized in that: etching can be adopted wet etching or dry ecthing in the step (3).
7, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate as claimed in claim 6 is characterized in that: the wet etching prescription is ferric trichloride 400～600g/L, hydrochloric acid 2～5g/L, ammonium acid fluoride 1～2g/L, sulphur urine 0.5% (mass ratio).
8, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate as claimed in claim 7 is characterized in that: also can comprise etching promoter and regenerative agent 2～5g/L.
9, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate as claimed in claim 8, it is characterized in that: this etching promoter and regenerative agent are hydrogen peroxide.
10, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate as claimed in claim 1, it is characterized in that: the circuit diagram that shifts design in the step (3) comprises heat fixed type ink that prints etch-resistance or the ultraviolet curable ink development dual mode that exposes etch-resistance at least.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101313713A CN101378627A (en) | 2007-08-28 | 2007-08-28 | Method for forming conductive line on an insulated heat-conducting metal substrate by vacuum splashing and plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101313713A CN101378627A (en) | 2007-08-28 | 2007-08-28 | Method for forming conductive line on an insulated heat-conducting metal substrate by vacuum splashing and plating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101378627A true CN101378627A (en) | 2009-03-04 |
Family
ID=40421893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101313713A Pending CN101378627A (en) | 2007-08-28 | 2007-08-28 | Method for forming conductive line on an insulated heat-conducting metal substrate by vacuum splashing and plating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101378627A (en) |
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2007
- 2007-08-28 CN CNA2007101313713A patent/CN101378627A/en active Pending
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20090304 |