CN101378624A - Module structure integrating perimeter circuit and manufacturing method thereof - Google Patents
Module structure integrating perimeter circuit and manufacturing method thereof Download PDFInfo
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- CN101378624A CN101378624A CN 200710142592 CN200710142592A CN101378624A CN 101378624 A CN101378624 A CN 101378624A CN 200710142592 CN200710142592 CN 200710142592 CN 200710142592 A CN200710142592 A CN 200710142592A CN 101378624 A CN101378624 A CN 101378624A
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- circuit
- circuit unit
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- support plate
- perimeter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention provides a module structure used for integrating circumferential circuits, comprising a silicon chip carrier, at least a circumferential unit and at least a main circuit unit; wherein, the circumferential circuit unit is integrated in the silicon chip carrier by a semiconductor preparation type; furthermore, the main circuit unit is attached on the surface of the silicon chip carrier and is electrically connected with the circumferential circuit unit so as to carry out the transmission of signals, thereby shortening the volume of the module.
Description
Technical field
The present invention relates to a kind of modular structure and manufacture method thereof of integrating perimeter circuit, refer in particular to and a kind of peripheral circuit is integrated in modular structure and manufacture method thereof among the support plate.
Background technology
In recent years, the quick growth of science and technology made various products one after another towards the application in conjunction with science and technology, and also constantly in the middle of progress.And, make that present most product all is to adopt modular mode to come Integration Design also just because the function of product is more and more.Yet, in product, integrate the module of multiple difference in functionality, though get so that the function of product significantly increases, but be particular about under the demand of product miniaturization and exquisite outward appearance now, will how to design and have the little and multi-functional product of small product size concurrently, be the target that present all trades and professions are all doing one's utmost to study.
And at the semiconductor manufacture view, being the evolution that constantly sees through process technique produces less chip of volume or assembly with the technology of high-order more and more, so that the module manufacturer that uses is designed less functional module relatively, and then can allow end product as more efficient use and collocation.
And present known techniques, most application module is still the main support plate that is used as module with the substrate of unlike materials such as printed circuit board (PCB) (PCB), epoxy resin (FR-4) substrate or BT substrate, and parts such as all chips, assembly see through the surface that surface mount technology piece modes such as (SMT) is attached to support plate again.So just in order to form the usefulness of circuit connection when carrier, structure wherein is also just in order to the hierarchy as circuit cabling layout purely for support plate.
And be example with the radio system module, for towards multi-functional development, often wireless network (WLAN) can be integrated bluetooth (Bluetooth) or satellite navigation modules such as (GPS) simultaneously.But, relatively under the peripheral circuit of required use also just become many, and, then will certainly increase the volume size of whole module if each other part of these circuit all is attached on the support plate.Simultaneously, among limited support plate scope, carry out the jamproof design of signal, just also just increase the degree of difficulty of designer when design greatly, so that may on circuit characteristic, cause indefinite influence.
Summary of the invention
In view of this, technical problem to be solved by this invention is, sees through to use different support plates, and in conjunction with the technology of manufacture of semiconductor peripheral circuit is integrated in design among the support plate, to reach the purpose of the volume size that effectively dwindles whole module.In addition, because that peripheral circuit is able in design with main circuit is quite close, thereby the circuit characteristic used of hoisting module significantly.
In order to achieve the above object, according to a scheme proposed by the invention, provide a kind of modular structure of integrating perimeter circuit, it comprises: a silicon support plate, at least one peripheral circuit unit and at least one main circuit unit.Wherein the peripheral circuit unit is integrated among this silicon support plate through semiconductor processing procedure mode, and main circuit unit is attached to the surface of this silicon support plate, and electrically connects this peripheral circuit unit, to carry out the transmission of signal.
In order to achieve the above object, according to another program proposed by the invention, a kind of manufacture method of modular structure of integrating perimeter circuit is provided, its step comprises: at first, at least one peripheral circuit unit is provided, then this peripheral circuit unit is integrated into a silicon support plate, stick together the surface of at least one main circuit unit at last in this silicon support plate in semiconductor processing procedure mode, electrically connect to form, and finish this modular structure with this peripheral circuit unit.By this, to reach the purpose of the volume size that dwindles whole module.
Above general introduction and ensuing detailed description and accompanying drawing all are to reach mode, means and the effect that predetermined purpose is taked in order to further specify the present invention.And relevant other purpose of the present invention and advantage, will follow-up explanation and graphic in set forth.
Description of drawings
Fig. 1 is the schematic perspective view of the modular structure of integrating perimeter circuit of the present invention;
Figure 1A be the frenquency signal circuit with the silicon support plate be connected the framework calcspar;
Fig. 2 A is the perforation structure vertical view of the modular structure of integrating perimeter circuit of the present invention;
Fig. 2 B is the perforation structure profile of Fig. 2 A; And
Fig. 3 is the manufacture method embodiment flow chart of the modular structure of integrating perimeter circuit of the present invention.
The diagrammatical symbol explanation
The parallel perforation 112 of hollow
Peripheral circuit unit 2
Filter-capacitor circuit 202
Phase-frequency detector 2041
Voltage controlled oscillator 2044
Frequency eliminator 2045
Embodiment
Please refer to Fig. 1, be the schematic perspective view of the modular structure of integrating perimeter circuit of the present invention.As shown in the figure, the invention provides a kind of modular structure of integrating perimeter circuit, it comprises: a silicon support plate 1, at least one peripheral circuit unit 2 and at least one main circuit unit 3.Wherein, peripheral circuit unit 2 is to see through semiconductor processing procedure mode to be integrated among the silicon support plate 1, main circuit unit 3 then is the surface that for example is attached to silicon support plate 1 with surface mount technology (SMT) mode piece, and electrically connect the peripheral circuit unit 2 that has been integrated in the silicon support plate 1, to carry out signal transmission each other.
And above-mentioned peripheral circuit unit 2 is except can more can for example having memory storage circuit, electric power management circuit, interface conversion circuit and antenna phase change-over circuit etc. as impedance matching circuit 201, filter-capacitor circuit 202, voltage conversion circuit 203 and the frenquency signal circuit 204 of being given an example among Fig. 1.And in order to further specify the actual annexation that peripheral circuit unit 2 is integrated in silicon support plate 1, please refer to Figure 1A and be connected the framework calcspar for frenquency signal circuit and silicon support plate.As shown in the figure, present embodiment is can be integrated in the silicon support plate 1 by changeless assembly in the frenquency signal circuit 204 of frequency synthesizer, and original frequency signal circuit 204 is to comprise a phase-frequency detector 2041, a charge pump 2042, a low pass filter 2043, a voltage controlled oscillator 2044, a frequency eliminator 2045 and an external reference oscillator 2046.Present embodiment is phase-frequency detector 2041, charge pump 2042, low pass filter 2043, voltage controlled oscillator 2044 and frequency eliminator 2045 all to be integrated in the silicon support plate 1 come output frequency signal 2040 to be connected to form so-called phase-locked loop.In addition, therefore the external reference oscillator 2046 that produces this required reference frequency in phase-locked loop may design in the surface of silicon support plate 1 because of different application difference to some extent, sticks together to allow the designer just carry out outside piece when doing different designs.
And be Module Design in response to the different application field, the kind of peripheral circuit is not limited to above-mentioned circuit, and can select a kind of or more than one different circuit wherein to do Application Design.In addition, the kind difference of peripheral circuit is not to be used for limiting application range of the present invention yet.
And owing to the present invention has been integrated in peripheral circuit unit 2 in the silicon support plate 1 in the mode of manufacture of semiconductor earlier, therefore aspect the wiring that carries out between main circuit unit 3 and the peripheral circuit unit 2, can for example see through circuit rerouting technology (Redistribution Layer, RDL) carry out the wiring design, with will be attached on the silicon support plate 1 main circuit unit 3 be integrated in peripheral circuit unit 2 in the silicon support plate 1 and see through the mode of the i/o sites+of adjusting assembly, be connected with circuit between the peripheral circuit unit 2 to finish main circuit unit 3, and signal quality and stability between the lifting subassembly.
And in silicon support plate 1, be subjected to noise jamming in order to prevent that signal from transmitting between main circuit unit 3 and peripheral circuit unit 2, prevent that perhaps signal from forming decay, with stability and the correctness that can keep signal.It is for example: the signal line cabling of high frequency wireless radio frequency circuit is exactly the interference that is very easy to be subjected to context, and high-frequency signals also is easy to generate radiation and causes the decay of signal, therefore is to need a clean muting path to transmit for high-frequency signals.Be directed to this, refer again to Fig. 2 A and Fig. 2 B, be the perforation structure vertical view and the profile thereof of the modular structure of integrating perimeter circuit of the present invention.Wherein in silicon support plate 1 if when needing the design of cleaner muting signal line 10 cablings, then can see through a bonding structure 11 be located in signal line 10 around, by this, outside noise except can completely cutting off signal line 10 produces and disturbs, also effective leaking of the signal of inhibition own.And as shown in Fig. 2 A and Fig. 2 B, bonding structure 11 is to shield signal line 10 with plating perforation 111 and the parallel perforation 112 two-layer modes of hollow, and when practical application designs, also can use plating perforation 111 or the parallel perforation 112 of hollow to shield separately.And if design two kinds of different bonding structures 11, the formed shielding order of its about level is not limited yet.
Refer again to Fig. 3, be the manufacture method embodiment flow chart of the modular structure of integrating perimeter circuit of the present invention.As shown in the figure, the invention provides a kind of manufacture method of modular structure of integrating perimeter circuit, its step comprises: at first, according to the modular design demand, provide desire to integrate the peripheral circuit unit 2 (S301) of usefulness, then provide in order to enclose the bonding structure 11 (S303) of signal line 10 according to the requirement of the 2 pairs of signal quality in peripheral circuit unit that provided again.So, utilize the manufacture of semiconductor mode to come integrating perimeter circuit unit 2 and required relatively bonding structure 11 to be shaped to silicon support plate 1 (S305) with making.At last, stick together the surface of main circuit unit 3 in silicon support plate 1, with with silicon support plate 1 in peripheral circuit unit 2 form and electrically connect (S307), and then finish have signal anti-interference, suppress signal attenuation and have the module of multi-functional and miniaturization simultaneously.
Subsidiary one carry be, above-mentioned mentioned manufacture of semiconductor mode, can for example be to begin to repeat through a succession of fabrication steps, comprise that steps such as optics developments, quick high-temp processing procedure, chemical vapour deposition (CVD), ion implantation and etching come storehouse to form the silicon support plate 1 with circuit used herein by Silicon Wafer.
In sum, the present invention sees through different support plates and uses, and in conjunction with the technology of manufacture of semiconductor peripheral circuit is integrated among the support plate, to reach the purpose of the volume size that effectively dwindles whole module.In addition, more have following several advantages:
1, the circuit characteristic of hoisting module: see through that to the invention enables the peripheral circuit unit to be able in design with main circuit unit quite close, therefore can prevent long signal attenuation during apart from cabling, and the circuit characteristic of hoisting module significantly.
2, reduce the module temperature: because the silicon support plate has good thermal conduction characteristic, the therefore temperature that can effectively reduce whole module and produced as carrier by the silicon support plate.
3, reduce cost: owing to part or all of peripheral circuit unit is integrated among the silicon support plate, and the silicon support plate is to have bigger areal extent comparatively speaking, therefore need not use the process technique of higher-order, and all peripheral circuit unit use identical lower-order processing procedure (as: 0.5 micron system) all to reach in the silicon support plate, so can save cost significantly.
But, the above, it only is the detailed description of specific embodiments of the invention and graphic, be not in order to restriction the present invention, all scopes of the present invention should be as the criterion with claim, anyly be familiar with this skill person in the field of the invention, can think easily and variation or modify and all can be encompassed in the claim that the present invention defines.
Claims (10)
1, a kind of modular structure of integrating perimeter circuit is characterized in that, comprising:
One silicon support plate;
At least one peripheral circuit unit sees through semiconductor processing procedure mode and is integrated among this silicon support plate; And
At least one main circuit unit is attached to the surface of this silicon support plate, and electrically connects this peripheral circuit unit, to carry out the transmission of signal.
2, the modular structure of integrating perimeter circuit as claimed in claim 1 is characterized in that: described peripheral circuit unit is one of them or a more than one circuit of impedance matching circuit, filter-capacitor circuit, voltage conversion circuit, memory storage circuit, electric power management circuit, interface conversion circuit, frenquency signal circuit and antenna phase change-over circuit.
3, the modular structure of integrating perimeter circuit as claimed in claim 1 is characterized in that: see through circuit rerouting technology (RedistributionLayer) between described main circuit unit and this peripheral circuit unit and connect.
4, the modular structure of integrating perimeter circuit as claimed in claim 1 is characterized in that: in this silicon support plate, the signal line between this main circuit unit and this peripheral circuit unit further encloses a bonding structure.
5, the modular structure of integrating perimeter circuit as claimed in claim 4 is characterized in that: described bonding structure is plating perforation and/or the parallel perforation of hollow.
6, a kind of manufacture method of modular structure of integrating perimeter circuit as claimed in claim 1 is characterized in that, its step comprises:
This peripheral circuit unit is provided;
This manufacture of semiconductor mode of seeing through is integrated this peripheral circuit unit to be shaped to this silicon support plate; And
Stick together the surface of this main circuit unit, electrically connect to form with this peripheral circuit unit in this silicon support plate.
7, the manufacture method of the modular structure of integrating perimeter circuit as claimed in claim 6 is characterized in that: described peripheral circuit unit is one of them or a more than one circuit of impedance matching circuit, filter-capacitor circuit, voltage conversion circuit, memory storage circuit, electric power management circuit, interface conversion circuit, frenquency signal circuit and antenna phase change-over circuit.
8, the manufacture method of the modular structure of integrating perimeter circuit as claimed in claim 6 is characterized in that: see through circuit rerouting technology (Redistribution Layer) between described main circuit unit and this peripheral circuit unit and connect.
9, the manufacture method of the modular structure of integrating perimeter circuit as claimed in claim 6, it is characterized in that: integrate this peripheral circuit unit with the step that is shaped to this silicon support plate in, further enclose a bonding structure in the signal line that is connected between this peripheral circuit unit and this main circuit unit.
10, the manufacture method of the modular structure of integrating perimeter circuit as claimed in claim 9 is characterized in that: described bonding structure is plating perforation and/or the parallel perforation of hollow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710142592 CN101378624B (en) | 2007-08-29 | 2007-08-29 | Module structure integrating perimeter circuit and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710142592 CN101378624B (en) | 2007-08-29 | 2007-08-29 | Module structure integrating perimeter circuit and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101378624A true CN101378624A (en) | 2009-03-04 |
| CN101378624B CN101378624B (en) | 2010-11-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710142592 Expired - Fee Related CN101378624B (en) | 2007-08-29 | 2007-08-29 | Module structure integrating perimeter circuit and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569230A (en) * | 2012-02-28 | 2012-07-11 | 华为技术有限公司 | Semiconductor device and electronic device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2255672B (en) * | 1991-05-10 | 1994-11-30 | Northern Telecom Ltd | Opto-electronic components |
| SE9202077L (en) * | 1992-07-06 | 1994-01-07 | Ellemtel Utvecklings Ab | component Module |
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2007
- 2007-08-29 CN CN 200710142592 patent/CN101378624B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569230A (en) * | 2012-02-28 | 2012-07-11 | 华为技术有限公司 | Semiconductor device and electronic device |
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| Publication number | Publication date |
|---|---|
| CN101378624B (en) | 2010-11-10 |
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Granted publication date: 20101110 Termination date: 20160829 |