CN101378029A - Dual-electrode electrostatic chuck - Google Patents
Dual-electrode electrostatic chuck Download PDFInfo
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- CN101378029A CN101378029A CNA2007101211315A CN200710121131A CN101378029A CN 101378029 A CN101378029 A CN 101378029A CN A2007101211315 A CNA2007101211315 A CN A2007101211315A CN 200710121131 A CN200710121131 A CN 200710121131A CN 101378029 A CN101378029 A CN 101378029A
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- electrode
- electrostatic chuck
- dual
- ring shaped
- ring
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Abstract
The invention discloses a two-electrode electrostatic chuck comprising an insulated layer, in which a first direct-current electrode and a second direct-current electrode are arranged and respectively include a plurality of ring-shaped conductors. The ring-shaped conductors are distributed at mutual intervals; and a connecting device is respectively arranged below the conductors, which are connected respectively through a corresponding connecting device. The connecting device comprises a connecting plate, on which a plurality of conduction poles are connected, with each conduction pole being connected with a ring-shaped conductor. The ring-shaped conductors of the first direct-current electrode and the second direct-current electrode are caused to form completely symmetric ring-shaped structure, thus electrostatic absorption force of uniform distribution is fulfilled between the electrostatic chuck and a wafer.
Description
Technical field
The present invention relates to a kind of semiconductor processing equipment parts, relate in particular to a kind of dual-electrode electrostatic chuck.
Background technology
In the semiconductor wafer process equipment, electrostatic chuck be used for during semiconductor technology or during the wafer handling with wafer support and be adsorbed on processing chamber or transporting equipment in.Dual-electrode electrostatic chuck is a kind of in the electrostatic chuck that generally uses in semicon industry.
As shown in Figure 1, be first DC electrode 1 and the power supply of second DC electrode 2 of dual-electrode electrostatic chuck by DC power supply, wherein first DC electrode 1 is for just, and second DC electrode 2 is for bearing.Thereby on the wafer that is placed on it, induce corresponding negative, positive electric charge, the electrostatic attraction between the electric charge on electric charge that induces and the DC electrode 1,2 with wafer suction on the electrostatic chuck surface.If there is skewness in the absorption affinity between electrostatic chuck and the wafer on the entire wafer zone, then directly influence the attachment state between wafer and the electrostatic chuck surface, and then influence thermal conductivity, thus the non-uniform temperature of wafer surface caused, or influence other technological parameter.
For dual-electrode electrostatic chuck,, will produce the absorption affinity of different sizes to wafer because first DC electrode 1 is carried different electric charges with second DC electrode 2.
As Fig. 2, shown in Figure 3, be provided with electrode layer 3 in the insulating barrier 4 of dual-electrode electrostatic chuck in the prior art, first DC electrode 1 and second DC electrode 2 are respectively many loop configuration, are arranged in the electrode layer 3, and a plurality of rings that belong to same electrode are communicated with by the coupling part.
There is following shortcoming at least in above-mentioned prior art: owing to a plurality of annular electrodes need be connected to two DC electrode, need on annular electrode, form the coupling part that a plurality of annular electrodes are connected together, cause electrode not distribute fully symmetrically, still can produce certain influence the uniformity of electrostatic chuck absorption affinity.
Summary of the invention
The purpose of this invention is to provide a kind of dual-electrode electrostatic chuck that can produce uniform absorption affinity.
The objective of the invention is to be achieved through the following technical solutions:
Dual-electrode electrostatic chuck of the present invention, comprise insulating barrier, be provided with first DC electrode and second DC electrode in the described insulating barrier, described first DC electrode and second DC electrode comprise a plurality of ring shaped conductors respectively, a plurality of ring shaped conductors space of two DC electrode distributes, the below of described first DC electrode and second DC electrode is respectively equipped with jockey, and a plurality of ring shaped conductors of described first DC electrode and second DC electrode are connected by corresponding jockey respectively.
As seen from the above technical solution provided by the invention, dual-electrode electrostatic chuck of the present invention, because first DC electrode and second DC electrode comprise a plurality of ring shaped conductors respectively, a plurality of ring shaped conductors space of two DC electrode distributes, the below of first DC electrode and second DC electrode is respectively equipped with jockey, and a plurality of ring shaped conductors of first DC electrode and second DC electrode are connected by corresponding jockey respectively.The ring shaped conductor of first DC electrode and second DC electrode just can form the loop configuration of complete symmetry, makes dual-electrode electrostatic chuck can produce uniform absorption affinity.
Description of drawings
Fig. 1 is the fundamental diagram of dual-electrode electrostatic chuck in the prior art;
Fig. 2 is that the electrode plane of dual-electrode electrostatic chuck in the prior art is arranged schematic diagram;
Fig. 3 is the facade view of dual-electrode electrostatic chuck in the prior art;
Fig. 4 is that the electrode plane of dual-electrode electrostatic chuck of the present invention is arranged schematic diagram;
Fig. 5 is the facade view of dual-electrode electrostatic chuck of the present invention;
Fig. 6 is the planar structure schematic diagram of conductting layer among the present invention;
Fig. 7 is the planar structure schematic diagram of articulamentum among the present invention.
Embodiment
Dual-electrode electrostatic chuck of the present invention, the embodiment that it is preferable such as Fig. 4, shown in Figure 5, comprise insulating barrier 4, be provided with first DC electrode 1 and second DC electrode 2 in the insulating barrier 4, described first DC electrode 1 and second DC electrode 2 comprise a plurality of ring shaped conductors respectively, a plurality of ring shaped conductors space of two DC electrode 1,2 distributes, the below of described first DC electrode 1 and second DC electrode 2 is respectively equipped with jockey, and a plurality of ring shaped conductors of described first DC electrode 1 and second DC electrode 2 are connected by corresponding jockey respectively.The ring shaped conductor of first DC electrode 1 and second DC electrode 2 just can form the loop configuration of complete symmetry.
As Fig. 6, shown in Figure 7, described jockey comprises connecting plate 9,10, is connected with a plurality of conduction columns 7,8 on the described connecting plate 9,10, and each conduction column 7,8 is connected with a ring shaped conductor.Wherein, a plurality of ring shaped conductors of first DC electrode 1 interconnect by first conduction column 7 and first connecting plate 9, form the electrode of an integral body; A plurality of ring shaped conductors of second DC electrode 2 interconnect by second conduction column 8 and second connecting plate 10, form the electrode of an integral body.
Specifically can be provided with DC electrode layer 3, conductting layer 5 and articulamentum 6 in insulating barrier 4, described first DC electrode 1 and second DC electrode 2 are located in the DC electrode layer 3, and described conduction column 7,8 is located in the conductting layer 5, and connecting plate 9,10 is arranged in the articulamentum 6.
The present invention has realized the how annular DC electrode of the complete symmetry of dual-electrode electrostatic chuck, has eliminated the asymmetric part in the DC electrode, can realize the Electrostatic Absorption power that is evenly distributed between electrostatic chuck and wafer.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (3)
1, a kind of dual-electrode electrostatic chuck, comprise insulating barrier, it is characterized in that, be provided with first DC electrode and second DC electrode in the described insulating barrier, described first DC electrode and second DC electrode comprise a plurality of ring shaped conductors respectively, a plurality of ring shaped conductors space of two DC electrode distributes, the below of described first DC electrode and second DC electrode is respectively equipped with jockey, and a plurality of ring shaped conductors of described first DC electrode and second DC electrode are connected by corresponding jockey respectively.
2, dual-electrode electrostatic chuck according to claim 1 is characterized in that, described jockey comprises connecting plate, is connected with a plurality of conduction columns on the described connecting plate, and each conduction column is connected with a described ring shaped conductor.
3, dual-electrode electrostatic chuck according to claim 2, it is characterized in that, be provided with DC electrode layer, conductting layer and articulamentum in the described insulating barrier, described first DC electrode and second DC electrode are located in the described DC electrode layer, and described conduction column and connecting plate are located at respectively in described conductting layer and the articulamentum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101211315A CN101378029B (en) | 2007-08-30 | 2007-08-30 | Dual-electrode electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101211315A CN101378029B (en) | 2007-08-30 | 2007-08-30 | Dual-electrode electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101378029A true CN101378029A (en) | 2009-03-04 |
| CN101378029B CN101378029B (en) | 2010-11-03 |
Family
ID=40421496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101211315A Active CN101378029B (en) | 2007-08-30 | 2007-08-30 | Dual-electrode electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101378029B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623379A (en) * | 2011-01-27 | 2012-08-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic holding device and semiconductor processing apparatus |
| CN105097625A (en) * | 2014-05-19 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Transmission apparatus and semiconductor processing device |
| CN105374727A (en) * | 2014-08-25 | 2016-03-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck device and wafer or tray fixing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7567421B2 (en) * | 2003-06-17 | 2009-07-28 | Creative Technology Corporation | Bipolar electrostatic chuck |
| CN2774712Y (en) * | 2005-01-27 | 2006-04-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Static chuck device |
| CN100362644C (en) * | 2005-12-07 | 2008-01-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck |
-
2007
- 2007-08-30 CN CN2007101211315A patent/CN101378029B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623379A (en) * | 2011-01-27 | 2012-08-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic holding device and semiconductor processing apparatus |
| CN105097625A (en) * | 2014-05-19 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Transmission apparatus and semiconductor processing device |
| CN105374727A (en) * | 2014-08-25 | 2016-03-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck device and wafer or tray fixing method |
| CN105374727B (en) * | 2014-08-25 | 2018-07-06 | 北京北方华创微电子装备有限公司 | The fixing means of electrostatic chuck apparatus and chip or pallet |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101378029B (en) | 2010-11-03 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |