Summary of the invention
The objective of the invention is provides a kind of device of accelerating the power supply velocity of discharge through some embodiment, and the power supply electric charge can in time be discharged when shutdown, eliminates the picture abnormal occurrence, improves image quality.
For realizing above-mentioned purpose, the invention provides a kind of device of accelerating the power supply velocity of discharge, comprising:
Liquid crystal panel, the common electric voltage output terminal that comprises grid line, data line, is formed on the TFT of grid line and data line infall and common electric voltage is provided;
The source drive integrated circult is connected with data line, is used for to liquid crystal panel data-signal being provided through data line;
The grid drive integrated circult is connected with grid line, is used for to the liquid crystal panel circuit control signal being provided through grid line;
Voltage regulator circuit; Have power input, analog power output terminal, grid cut-in voltage output terminal and gate off voltage output terminal; Said analog power output terminal is connected with the source drive integrated circult, and said grid cut-in voltage output terminal is connected with the grid drive integrated circult with the gate off voltage output terminal;
On-off circuit is arranged at least one output terminal, is used for when power remove the electric charge of power supply is directly imported ground, improves the velocity of discharge of power supply.
Said on-off circuit comprises first on-off circuit; Said first on-off circuit comprises the N channel depletion type FET and first energy storage capacitor; The source electrode of said N channel depletion type FET is connected with the analog power output terminal, and grid is connected grounded drain with the input power supply; One end of said first energy storage capacitor is connected other end ground connection with the grid of said N channel depletion type FET.
Said on-off circuit comprises the second switch circuit; Said second switch circuit comprises the N channel depletion type FET and second energy storage capacitor; The source electrode of said N channel depletion type FET is connected with grid cut-in voltage output terminal, and grid is connected grounded drain with the input power supply; One end of said second energy storage capacitor is connected other end ground connection with the grid of said N channel depletion type FET.
Said on-off circuit comprises the 3rd on-off circuit; Said the 3rd on-off circuit comprises N channel depletion type FET and the 3rd energy storage capacitor; The source electrode of said N channel depletion type FET is connected with the common electric voltage output terminal, and grid is connected with logic power, grounded drain; One end of said the 3rd energy storage capacitor is connected other end ground connection with the grid of said N channel depletion type FET.
Said on-off circuit comprises the 4th on-off circuit, and said the 4th on-off circuit comprises P channel depletion type FET, and the drain electrode of said P channel depletion type FET is connected with the gate off voltage output terminal, and grid is connected grounded drain with the input power supply.
The present invention accelerates the device of the power supply velocity of discharge, utilizes the FET self characteristics, when power remove; Can rapidly the electric charge in the drain electrode directly be imported ground; Improve the velocity of discharge of power supply, eliminated the picture abnormal occurrence preferably, improved picture quality.
Through accompanying drawing and embodiment, technical scheme of the present invention is done further detailed description below.
Embodiment
Fig. 1 accelerates the structural representation of the device embodiment 1 of the power supply velocity of discharge for the present invention; Shown in Fig. 1, the device of accelerating the power supply velocity of discharge comprises liquid crystal panel 1, source drive integrated circult 2, grid drive integrated circult 3, voltage regulator circuit 4 and on-off circuit.Wherein, liquid crystal panel 1 comprises the TFT of grid line 11, data line 12 and grid line 11 and data line 12 infalls; Source drive integrated circult 2 is connected with data line 12, is used for to liquid crystal panel 1 data-signal being provided; Grid drive integrated circult 3 is connected with grid line 11, is used for to liquid crystal panel 1 control signal being provided; Voltage regulator circuit 4 has power input, analog power output terminal, grid cut-in voltage output terminal and gate off voltage output terminal; The analog power output terminal is connected with source drive integrated circult 2, and grid cut-in voltage output terminal is connected with grid drive integrated circult 3 with the gate off voltage output terminal;
On-off circuit comprises first on-off circuit 51; First on-off circuit 51 comprises the N channel depletion type FET Q1 and the first energy storage capacitor C1, and the source electrode of above-mentioned N channel depletion type FET Q1 is connected with the analog power output terminal, and grid is connected with input power vd D; Grounded drain; The end of the first energy storage capacitor C1 is connected with the grid of N channel depletion type FET Q1, and other end ground connection is used to accelerate the velocity of discharge of power supply.
When the circuit operate as normal, analog power AVDD is about 12V, and input power vd D is about 5V, so the voltage difference Vgs between grid and source electrode<0, N channel depletion type FET Q1 does not work, and is in off-state; When the circuit general supply was turn-offed, voltage regulator circuit quit work, and analog power AVDD begins to descend; Because input power supply vdd terminal links to each other with the first energy storage capacitor C1, so the velocity of discharge is slower, when analog power AVDD terminal voltage is lower than input power vd D terminal voltage; Voltage difference Vgs between grid and source electrode>0; N channel depletion type FET Q1 starts working, and impels source electrode and drain electrode conducting, and the electric charge on the analog power AVDD is directly imported ground; Make analog power AVDD discharge rapidly, thereby improved the velocity of discharge of analog power AVDD.
Said apparatus; Utilize N channel depletion type FET Q1 self characteristics, behind power remove, N channel depletion type FET Q1 starts working; Can rapidly the electric charge on the source electrode directly be imported ground; Improve the velocity of discharge of power supply, eliminated the abnormal occurrence that picture occurs preferably, improved picture quality.
Fig. 2 accelerates the structural representation of the device embodiment 2 of the power supply velocity of discharge for the present invention, and shown in Fig. 2, the difference of this embodiment and the foregoing description is; On-off circuit comprises second switch circuit 52; Second switch circuit 52 comprises the N channel depletion type FET Q2 and the second energy storage capacitor C2, and the source electrode of above-mentioned N channel depletion type FET Q2 is connected with grid cut-in voltage output terminal, and grid is connected with input power vd D; Grounded drain; The end of the second energy storage capacitor C2 is connected with the grid of N channel depletion type FET Q2, and other end ground connection is used to accelerate the velocity of discharge of power supply.
When the circuit operate as normal, grid cut-in voltage Von is about 25V, and input power vd D is about 5V, so the voltage difference Vgs between grid and source electrode<0, N channel depletion type FET Q2 does not work, and is in off-state; When the circuit general supply was turn-offed, voltage regulator circuit quit work, and grid cut-in voltage Von begins to descend; Because input power supply vdd terminal links to each other with the first energy storage capacitor C2, so the velocity of discharge is slower, when grid cut-in voltage Von terminal voltage is lower than input power vd D terminal voltage; Voltage difference Vgs between grid and source electrode>0; N channel depletion type FET Q2 starts working, and impels source electrode and drain electrode conducting, and the electric charge on the grid cut-in voltage Von is directly imported ground; Make grid cut-in voltage Von discharge rapidly, thereby improved the velocity of discharge of grid cut-in voltage Von.
Said apparatus; Utilize N channel depletion type FET Q2 self characteristics, behind power remove, N channel depletion type FET Q2 starts working; Can rapidly the electric charge on the source electrode directly be imported ground; Improve the velocity of discharge of power supply, eliminated the abnormal occurrence that picture occurs preferably, improved picture quality.
Fig. 3 accelerates the structural representation of the device embodiment 3 of the power supply velocity of discharge for the present invention, and as shown in Figure 3, the difference of this embodiment and the foregoing description is; On-off circuit comprises the 3rd on-off circuit 53; The 3rd on-off circuit 53 comprises N channel depletion type FET Q3 and the 3rd energy storage capacitor C3, and the source electrode of above-mentioned N channel depletion type FET Q3 is connected with the common electric voltage output terminal, and grid is connected with logic power DVDD; Grounded drain; The end of the 3rd energy storage capacitor C3 is connected with the grid of N channel depletion type FET Q3, and other end ground connection is used to accelerate the velocity of discharge of power supply.
When the circuit operate as normal, public electrode voltages Vcom is about 5V, and logic supply voltage DVDD is about 3.3V, so the voltage difference Vgs between grid and source electrode<0, N channel depletion type FET Q3 does not work, and is in off-state; When the circuit general supply was turn-offed, TFT quit work, and common electric voltage Vcom begins to descend; Because logic power DVDD end links to each other with the 3rd energy storage capacitor C3, so the velocity of discharge is slower, when common electric voltage Vcom is lower than logic power DVDD terminal voltage; Voltage difference Vgs between grid and source electrode>0; N channel depletion type FET Q3 starts working, and impels source electrode and drain electrode conducting, and the electric charge on the common electric voltage Vcom is directly imported ground; Make common electric voltage Vcom discharge rapidly, thereby improved the velocity of discharge of common electric voltage Vcom.
Said apparatus; Utilize N channel depletion type FET Q3 self characteristics, behind power remove, N channel depletion type FET Q3 starts working; Can rapidly the electric charge on the source electrode directly be imported ground; Improve the velocity of discharge of power supply, eliminated the abnormal occurrence that picture occurs preferably, improved the quality of picture.
Fig. 4 accelerates the structural representation of the device embodiment 4 of the power supply velocity of discharge for the present invention, and as shown in Figure 4, the difference of this embodiment and the foregoing description is; On-off circuit comprises the 4th on-off circuit 54; The 4th on-off circuit 54 comprises P channel depletion type FET Q4, and the drain electrode gate off voltage output terminal of above-mentioned P channel depletion type FET Q4 connects, and grid is connected with input power vd D; Grounded drain is used to accelerate the velocity of discharge of power supply.
During the circuit operate as normal, the source voltage of P channel depletion type FET Q4 is 0V, and grid voltage is the voltage of input power vd D; Be about 5V; So voltage difference Vgs ≈ 5V>0 between grid and source electrode, P channel depletion type FET Q4 does not work, and is in off-state; When the circuit general supply was turn-offed, voltage regulator circuit quit work, and the voltage of input power vd D drops to 0V rapidly; Voltage difference Vgs=0 between grid and source electrode; P channel depletion type FET Q4 starts working, and impels source electrode and drain electrode conducting, and the electric charge on the gate off voltage Voff is directly imported ground; Make gate off voltage Voff discharge rapidly, thereby improved the velocity of discharge of Voff.
Said apparatus utilizes P channel depletion type FET Q4 self characteristics, behind power remove; When pipe is started working, rapidly the electric charge on the source electrode is directly imported ground, improved the turn-off speed of power supply; Eliminate the abnormal occurrence that picture occurs preferably, improved picture quality.
Fig. 5 accelerates the structural representation of the device embodiment 5 of the power supply velocity of discharge for the present invention; As shown in Figure 5; The difference of this embodiment and the foregoing description is, on-off circuit comprises first on-off circuit 51, second switch circuit 52, second switch circuit 53 and second switch circuit 54.Wherein, First on-off circuit 51 comprises the N channel depletion type FET Q1 and the first energy storage capacitor C1; The source electrode of above-mentioned N channel depletion type FET Q1 is connected with the analog power output terminal, and grid is connected grounded drain with input power vd D; The end of the first energy storage capacitor C1 is connected other end ground connection with the grid of N channel depletion type FET Q1; Second switch circuit 52 comprises the N channel depletion type FET Q2 and the second energy storage capacitor C2; The source electrode of above-mentioned N channel depletion type FET Q2 is connected with grid cut-in voltage output terminal; Grid is connected with input power vd D; Grounded drain, the end of the second energy storage capacitor C2 is connected other end ground connection with the grid of N channel depletion type FET Q2; The 3rd on-off circuit 53 comprises N channel depletion type FET Q3 and the 3rd energy storage capacitor C3; The source electrode of above-mentioned N channel depletion type FET Q3 is connected with the common electric voltage output terminal; Grid is connected with logic power DVDD; Grounded drain, the end of the 3rd energy storage capacitor C3 is connected other end ground connection with the grid of N channel depletion type FET Q3; The 4th on-off circuit 54 comprises P channel depletion type FET Q4, and the drain electrode of above-mentioned P channel depletion type FET Q4 is connected with the gate off voltage output terminal, and grid is connected grounded drain with input power vd D; Be used to accelerate the velocity of discharge of power supply.
When the circuit general supply was turn-offed, TFT quit work, and common electric voltage Vcom begins to descend; Because logic power DVDD end links to each other with the 3rd energy storage capacitor C3, so the velocity of discharge is slower, when common electric voltage Vcom is lower than logic power DVDD terminal voltage; N channel depletion type FET Q3 starts working, and impels source electrode and drain electrode conducting, and the electric charge on the common electric voltage Vcom is directly imported ground; Make common electric voltage Vcom discharge rapidly, thereby improved the velocity of discharge of common electric voltage Vcom; Simultaneously, the voltage of analog power AVDD also begins to descend, because input power supply vdd terminal links to each other with the first energy storage capacitor C1; So the velocity of discharge is slower, when analog power AVDD terminal voltage was lower than input power vd D terminal voltage, N channel depletion type FET Q1 started working; Impel source electrode and drain electrode conducting; Electric charge on the analog power AVDD is directly imported ground, make analog power AVDD discharge rapidly, improved the velocity of discharge of analog power AVDD; Simultaneously, grid cut-in voltage Von also begins to descend, because input power supply vdd terminal links to each other with the second energy storage capacitor C2; So the velocity of discharge is slower, when grid cut-in voltage Von terminal voltage was lower than input power vd D terminal voltage, N channel depletion type FET Q2 started working; Impel source electrode and drain electrode conducting; Electric charge on the grid cut-in voltage Von is directly imported ground, make grid cut-in voltage Von discharge rapidly, improved the velocity of discharge of grid cut-in voltage Von; In addition; The voltage of input power vd D drops to 0V rapidly, and promptly during Vgs=0, P channel depletion type FET Q4 starts working; Impel source electrode and drain electrode conducting; Electric charge on the gate off voltage Voff is directly imported ground, make gate off voltage Voff discharge rapidly, thereby improved the velocity of discharge of Voff.
Said apparatus utilizes the FET self characteristics, behind power remove; When pipe is started working, will drain rapidly or source electrode on electric charge directly import ground, improved the velocity of discharge of power supply; Eliminate the abnormal occurrence that picture occurs preferably, improved picture quality.
What should explain at last is: above each embodiment is only in order to explaining technical scheme of the present invention, but not to its restriction; Although with reference to previous embodiment the present invention has been carried out detailed explanation, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these are revised or replacement, do not make the spirit and the scope of the essence disengaging various embodiments of the present invention technical scheme of relevant art scheme.