CN101373805B - LED chip with overvoltage protection structure - Google Patents
LED chip with overvoltage protection structure Download PDFInfo
- Publication number
- CN101373805B CN101373805B CN2008101072798A CN200810107279A CN101373805B CN 101373805 B CN101373805 B CN 101373805B CN 2008101072798 A CN2008101072798 A CN 2008101072798A CN 200810107279 A CN200810107279 A CN 200810107279A CN 101373805 B CN101373805 B CN 101373805B
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- overvoltage protection
- doping semiconductor
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention discloses a light emitting diode chip with an overvoltage protection structure. The chip is used for solving the problem of overvoltage protection of the chip in the condition of exceeding the rated voltage of the chip. The invention adopts the technical proposal that the light emitting diode chip comprises a multi-layer semiconductor structure on a substrate; wherein an overvoltage protecting part for realizing overvoltage protection through a pressure sensitive material is also arranged between a first doped semiconductor layer and a second doped semiconductor layer of the multi-layer semiconductor structure, so that the overvoltage protecting part can have the function of overvoltage protection to a luminous layer in the multi-layer semiconductor structure. The invention can be used for the circuit overvoltage protection and the antistatic protection of the chip.
Description
Technical field
The present invention relates to the chip of light-emitting diode, particularly relate to the overvoltage protection of light-emitting diode chip for backlight unit.
Background technology
Existing light-emitting diode chip for backlight unit mainly contains Sapphire Substrate, silicon substrate and silicon carbide substrates three major types by the materials classification of substrate.Wherein the chip of Sapphire Substrate is the single-side electrode structure, and silicon substrate and silicon carbide substrates adopt the vertical electrode structure more.The chip of light-emitting diode mainly is made of N electrode, N type doping semiconductor layer, luminous zone, P type doping semiconductor layer, P electrode and the stack of substrate several main parts.The size of these chips is very little.Because the size of chip is small, its operating voltage has only several volts, and static is very easily damaged by electrostatic breakdown in the environment in process of production often all in several kilovolts.The mode that present LED produces the antistatic that extensively adopts is to improve the purification level (being generally 10,000 grades) of packaged LED workshop environment, and the temperature and humidity of control Clean room reduces the infringement of static to chip, high standard can make that the cost of producing input is very high, and this mode is not good settling mode.
Summary of the invention
Technical problem to be solved by this invention provides a kind of light-emitting diode chip for backlight unit with overvoltage protection structure, and this chip is with solving in the overvoltage protection problem to chip that surpasses under the chip rated voltage situation.
In order to solve the problems of the technologies described above, the present invention proposes a kind of light-emitting diode chip for backlight unit with overvoltage protection structure, comprises first electrode, first doping semiconductor layer, luminescent layer, second doping semiconductor layer, second electrode and substrate; Wherein, first doping semiconductor layer, luminescent layer and second doping semiconductor layer are superimposed upon the top of substrate from top to bottom successively; Also be provided with the overvoltage protection portion that realizes overvoltage protection by pressure sensitive between described first doping semiconductor layer and second doping semiconductor layer.
Described overvoltage protection portion comprises bonding conductor, passivation layer and varistor layer; Bonding conductor is positioned on the chip sides, and it is communicated with in described first doping semiconductor layer or second doping semiconductor layer one of them, it and be provided with the varistor layer of forming by pressure sensitive between another; Between bonding conductor and described luminescent layer, be provided with described passivation layer on the sides of chip surface.
Preferred structure of the present invention is: described overvoltage protection portion is located at the side edge surface of described chip, and whole overvoltage protection portion is made of pressure sensitive.
Preferred structure of the present invention is: described chip is the horizontal electrode structure, and described substrate is a Sapphire Substrate.This horizontal electrode structure, its chip current are lateral flow, two electrodes all be positioned at chip above; This structure is applicable to such as the such insulator substrates of sapphire.
Preferred structure of the present invention is: described chip is the vertical electrode structure, and its substrate is a conductive substrates.The chip current of this vertical stratification is vertically to flow, and electrode is divided into upper and lower two faces of chip.It is applicable to that substrate is the chip of conductor, as in silicon substrate, silicon carbide substrates, germanium substrate, gallium arsenide substrate, gallium phosphide substrate, copper substrate, the chromium substrate any, perhaps is metal alloy substrate and other compound substrate.Metal alloy can be ferroalloy, copper alloy, evanohm etc.
Optimal way of the present invention is: described substrate is a silicon substrate.For the chip that does not pass through substrate transfer process, the substrate of indication is a growth substrates here.For deciding, remove the chip of growth substrates through nation, the substrate of indication is a translate substrate here.
Optimal way of the present invention is: described first electrode is the N electrode, and first doping semiconductor layer is a N type doping semiconductor layer, and second doping semiconductor layer is a P type doping semiconductor layer, and second electrode is the P electrode layer.
Preferred structure of the present invention is: be formed with electric connection layer on described overvoltage protection portion and described first doping semiconductor layer, electric connection layer is communicated with the described overvoltage protection portion and first doping semiconductor layer.
Optimal way of the present invention is: described pressure sensitive is the pressure sensitive of zinc oxide pressure-sensitive material, the pressure-sensitive material of carborundum, barium titanate pressure sensitive or germanium.Pressure sensitive is based on above-mentioned each material, contains the pressure sensitive of doping.
Beneficial effect of the present invention is as follows:
Compared to existing technology, the present invention has opened up an overvoltage crowbar zone separately on chip, promptly is connected with the overvoltage protection portion that realizes overvoltage protection by pressure sensitive between first doping semiconductor layer and second doping semiconductor layer.This partial circuit and chip light emitting partial circuit are connected in parallel, external voltage greater than the situation of chip limiting voltage under automatically conducting discharge, and then protection chip luminous component avoids it breakdown.Present pressure sensitive generally may be used to prevent the high-pressure situations of several kilovolts, so this structure of the present invention not only can prevent the overpressure situation in the circuit, can also be used for preventing producing the damage to chip of static that chip processes produces.
Description of drawings
Fig. 1 is the structure chart of embodiments of the invention one.
Fig. 2 is the structure chart of embodiments of the invention two.
Fig. 3 is the structure chart of embodiments of the invention three.
Embodiment
The invention provides a kind of light-emitting diode chip for backlight unit with overvoltage protection structure.
Embodiments of the invention one are referring to Fig. 1.This light-emitting diode chip for backlight unit adopts the vertical electrode structure, from top to bottom is followed successively by: N electrode 1, N type doping semiconductor layer 2, luminescent layer 3, P type doping semiconductor layer 4, P electrode 5, silicon substrate 6 and metal level 7.Wherein, the light-emitting film material of the multilayer semiconductor structure more than the substrate can be indium-gallium-aluminum-nitrogen (In
xGa
yAl
1-x-yN, 0≤x≤1,0≤y≤1) material, indium gallium aluminium phosphorus (In
xGa
yAl
1-x-yP, 0≤x≤1,0≤y≤1) material or indium gallium aluminum arsenide (In
xGa
yAl
1-x-yAs, 0≤x≤1,0≤y≤1) material.Present embodiment is selected the indium-gallium-aluminum-nitrogen material for use.This structure is that its growth substrates has been removed through the product structure after the flip chip bonding technology, and silicon substrate 6 is a translate substrate.Its feature is the top that N electrode 1 and N type doping semiconductor layer 2 are arranged on luminescent layer 3, and P electrode and P type doping semiconductor layer 4 are arranged on the below of luminescent layer 3.
Between N type doping semiconductor layer 2 and P type doping semiconductor layer 4, be provided with the overvoltage protection portion that realizes overvoltage protection by pressure sensitive.Overvoltage protection portion comprises bonding conductor 8, passivation layer 9 and varistor layer 10.Wherein bonding conductor 8 is positioned on the sides of chip surface, bonding conductor 8 is connected contact with the side edge surface of N type doping semiconductor layer 2, between between bonding conductor 8 and the luminescent layer 3, be separated with passivation layer 9, be separated with the varistor layer of forming by pressure sensitive 10 between between bonding conductor 8 and the P type doping semiconductor layer 4.Wherein, passivation layer 9 mainly has been an insulating effect.The connecting portion 20 that has N type doping semiconductor layer 2 to be connected at the top of passivation layer 9 with bonding conductor 8.The material of varistor layer 10 is zinc oxide pressure-sensitive materials, can change the character of pressure sensitive to adapt to corresponding occasion by the doping that changes zinc oxide.Pressure sensitive can also be that other is commonly used such as pressure-sensitive materials such as carborundum, barium titanate or germanium except the zinc oxide pressure-sensitive material.A contact conductor is connected on the N electrode 1, and another contact conductor is connected on the metal level 7.Bonding conductor 8 can be a metal level.
The another one analog structure of present embodiment is: the marginal position that varistor layer 10 is located at N type doping semiconductor layer 2.
Under the normal voltage situation, electric current from top to bottom flows through, and to chip power supply, the LED lamp is normally luminous; When power supply circuits took place to surpass the chip upper voltage limit, varistor layer 10 conductings caused N type doping semiconductor layer 2 and 4 short circuits of P type doping semiconductor layer thus, and electric current no longer passes through luminescent layer 9, and then has protected luminescent layer 9, makes it not breakdown.Passivation layer 9 is to be used for preventing that electric current from flowing to luminescent layer 3 by bonding conductor 8.In like manner, in process of production, if produced the static of thousands of volts, voltage can make varistor layer 10 conductings, and static can discharge by varistor layer, and can not destroy luminescent layer.
Embodiments of the invention two are referring to shown in Figure 2.This light-emitting diode chip for backlight unit adopts the vertical electrode structure, from top to bottom is followed successively by: N electrode 1, N type doping semiconductor layer 2, luminescent layer 3, P type doping semiconductor layer 4, P electrode 5, silicon substrate 6 and metal level 7.The difference of this example and embodiment one is the side edge surface that overvoltage protection portion 11 is located at chip, and whole overvoltage protection portion is made of pressure sensitive.
Under the normal voltage situation, electric current from top to bottom flows through, and to chip power supply, the LED lamp is normally luminous; When power supply circuits took place to surpass the chip upper voltage limit, 11 conductings of overvoltage protection portion caused N type doping semiconductor layer 2 and 4 conductings of P type doping semiconductor layer thus, and electric current no longer passes through luminescent layer 9, and then makes luminescent layer 9 not breakdown.In like manner be suitable for the static situation.
Embodiments of the invention three are referring to Fig. 3.This light-emitting diode chip for backlight unit adopts the horizontal electrode structure, and selected substrate is a Sapphire Substrate.Its structure from top to bottom is followed successively by: P electrode 5, P type doping semiconductor layer 4, luminescent layer 3, N type doping semiconductor layer 2 and substrate 6, N electrode 1 be located at N type doped semiconductor 2 above, it and P electrode 5 are positioned at the same side of chip.Wherein, the light-emitting film material of the multilayer semiconductor structure more than the substrate is selected the indium-gallium-aluminum-nitrogen material for use.The chip of this structure is the structure of not passing through flip chip bonding, and this structure P electrode 5 and P type doping semiconductor layer 4 are on luminescent layer 3, and N electrode 1 and N type doping semiconductor layer 2 are below luminescent layer 3.
Between P type doping semiconductor layer 4 and N type doping semiconductor layer 2, be provided with the overvoltage protection portion that realizes overvoltage protection by pressure sensitive.Overvoltage protection portion comprises bonding conductor 8, passivation layer 9 and varistor layer 10.Wherein bonding conductor 8 is positioned on the sides of chip surface; bonding conductor 8 is connected by electric connection layer 12 with the side of P type doping semiconductor layer 4; electric connection layer 12 makes overvoltage protection portion and P type doping semiconductor layer 4 keep the relation that conducts, and electric connection layer 12 can be the material the same with P electrode 5.Between between bonding conductor 8 and the luminescent layer 3, be separated with passivation layer 9, be separated with the varistor layer of forming by pressure sensitive 10 between between bonding conductor 8 and the N type doping semiconductor layer 2.
Claims (7)
1. the light-emitting diode chip for backlight unit with overvoltage protection structure comprises first electrode, first doping semiconductor layer, luminescent layer, second doping semiconductor layer, second electrode and substrate; Wherein, first doping semiconductor layer, luminescent layer and second doping semiconductor layer are superimposed upon the top of substrate from top to bottom successively; It is characterized in that: also be provided with the overvoltage protection portion that realizes overvoltage protection by pressure sensitive between described first doping semiconductor layer and second doping semiconductor layer; Described overvoltage protection portion comprises bonding conductor, passivation layer and varistor layer; Bonding conductor is positioned on the chip sides, and it is communicated with in described first doping semiconductor layer or second doping semiconductor layer one of them, it and be provided with the varistor layer of forming by pressure sensitive between another; Between bonding conductor and described luminescent layer, be provided with described passivation layer on the sides of chip surface.
2. the light-emitting diode chip for backlight unit with overvoltage protection structure according to claim 1 is characterized in that: described chip is the horizontal electrode structure, and described substrate is a Sapphire Substrate.
3. the light-emitting diode chip for backlight unit with overvoltage protection structure according to claim 1 is characterized in that: described chip is the vertical electrode structure, and its substrate is a conductive substrates.
4. the light-emitting diode chip for backlight unit with overvoltage protection structure according to claim 3; it is characterized in that: described substrate is any in silicon substrate, silicon carbide substrates, germanium substrate, gallium arsenide substrate, gallium phosphide substrate, copper substrate, the chromium substrate, perhaps is the metal alloy substrate.
5. the light-emitting diode chip for backlight unit with overvoltage protection structure according to claim 1; it is characterized in that: described first electrode is the N electrode; first doping semiconductor layer is a N type doping semiconductor layer, and second doping semiconductor layer is a P type doping semiconductor layer, and second electrode is the P electrode.
6. the light-emitting diode chip for backlight unit with overvoltage protection structure according to claim 1; it is characterized in that: be formed with electric connection layer on described overvoltage protection portion and described first doping semiconductor layer, electric connection layer is communicated with the described overvoltage protection portion and first doping semiconductor layer.
7. according to each described light-emitting diode chip for backlight unit with overvoltage protection structure of claim 1 to 6, it is characterized in that: described pressure sensitive is the pressure sensitive of zinc oxide, carborundum, barium titanate or germanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101072798A CN101373805B (en) | 2008-10-17 | 2008-10-17 | LED chip with overvoltage protection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101072798A CN101373805B (en) | 2008-10-17 | 2008-10-17 | LED chip with overvoltage protection structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101373805A CN101373805A (en) | 2009-02-25 |
| CN101373805B true CN101373805B (en) | 2011-03-23 |
Family
ID=40447838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101072798A Expired - Fee Related CN101373805B (en) | 2008-10-17 | 2008-10-17 | LED chip with overvoltage protection structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101373805B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3029292B2 (en) * | 1990-08-24 | 2000-04-04 | レックスエア・インコーポレーテッド | Separator for vacuum cleaning equipment |
| JP2000194991A (en) * | 1998-12-24 | 2000-07-14 | Toho Electrical Construction Co Ltd | Lighting instrument for led light source signal |
| CN1518133A (en) * | 2003-01-16 | 2004-08-04 | �����ɷ� | Luminous device with dependent voltage/resistance layer |
| CN1767189A (en) * | 2004-09-20 | 2006-05-03 | 帝希欧有限公司 | High brightness led with anti-static discharge impact protection funciton |
-
2008
- 2008-10-17 CN CN2008101072798A patent/CN101373805B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3029292B2 (en) * | 1990-08-24 | 2000-04-04 | レックスエア・インコーポレーテッド | Separator for vacuum cleaning equipment |
| JP2000194991A (en) * | 1998-12-24 | 2000-07-14 | Toho Electrical Construction Co Ltd | Lighting instrument for led light source signal |
| CN1518133A (en) * | 2003-01-16 | 2004-08-04 | �����ɷ� | Luminous device with dependent voltage/resistance layer |
| CN1767189A (en) * | 2004-09-20 | 2006-05-03 | 帝希欧有限公司 | High brightness led with anti-static discharge impact protection funciton |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101373805A (en) | 2009-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101313418B (en) | Light-emitting device and method for manufacturing the same | |
| US10290789B2 (en) | Light emitting device, manufacturing method for the light emitting device, and lighting module having the light emitting device | |
| EP2355177B1 (en) | Light emitting device, method of manufacturing the same | |
| US7151281B2 (en) | Light-emitting diode structure with electrostatic discharge protection | |
| US6911676B2 (en) | Semiconductor LED device and method for manufacturing the same | |
| US9287465B2 (en) | Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system | |
| CN105531834A (en) | Led chip having esd protection | |
| EP3163615B1 (en) | Light emitting device | |
| KR100905884B1 (en) | Light emitting device having protection element | |
| KR102413447B1 (en) | Light emitting device | |
| CN101373805B (en) | LED chip with overvoltage protection structure | |
| CN100524850C (en) | Gallium nitride luminous diode structure | |
| EP3358633B1 (en) | Light emitting module | |
| KR20120051969A (en) | Light emitting device | |
| CN101373804B (en) | LED chip with discharging structure | |
| CN1652359A (en) | LED structure with electrostatic protection function | |
| KR101662239B1 (en) | A light emitting device, a method of fabricating the light emitting device, and a light emitting device package | |
| US20120003762A1 (en) | Method to Protect Compound Semiconductor from Electrostatic Discharge Damage | |
| TWM629672U (en) | Light emitting device | |
| CN1885533A (en) | Protection method and structure for ESD of compound semiconductor | |
| CN100392885C (en) | Structure of light-emitting diode | |
| KR20130072994A (en) | Light emitting module and lighting system having the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20090225 Assignee: Crystal energy photoelectric (Changzhou) Co., Ltd. Assignor: Lattice Power (Jiangxi) Co., Ltd. Contract record no.: 2012360000083 Denomination of invention: LED chip with overvoltage protection structure Granted publication date: 20110323 License type: Common License Record date: 20121213 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110323 Termination date: 20181017 |
|
| EC01 | Cancellation of recordation of patent licensing contract | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: LATTICE POWER (CHANGZHOU) Corp. Assignor: LATTICE POWER (JIANGXI) Corp. Contract record no.: 2012360000083 Date of cancellation: 20220228 |