CN101364424A - Sensing circuit and method for phase-change memory - Google Patents
Sensing circuit and method for phase-change memory Download PDFInfo
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- CN101364424A CN101364424A CNA2007101423111A CN200710142311A CN101364424A CN 101364424 A CN101364424 A CN 101364424A CN A2007101423111 A CNA2007101423111 A CN A2007101423111A CN 200710142311 A CN200710142311 A CN 200710142311A CN 101364424 A CN101364424 A CN 101364424A
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- 238000000034 method Methods 0.000 title claims description 12
- 238000003860 storage Methods 0.000 claims abstract description 108
- 239000003990 capacitor Substances 0.000 claims abstract description 31
- 230000007704 transition Effects 0.000 claims description 40
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
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Abstract
A sensing circuit for a phase change memory comprises a first storage capacitor and a reference capacitor, a storage memory element and a reference memory element, a storage discharge switch and a reference discharge switch, and a judgment device. The first ends of the storage capacitor and the reference capacitor are both coupled with a pre-charged voltage via a first switch, the first ends of the storage memory element and the reference memory element are respectively coupled with the first ends of the storage capacitor and the reference capacitor via a second switch, the storage discharge switch and the reference discharge switch are respectively coupled with the first ends of the storage memory element and the reference memory element, and the judgment device is coupled with the first ends of the storage memory element and the reference memory element and provides an output as the read result of the storage state of the storage memory element.
Description
Technical field
The present invention relates to phase transition storage, particularly relate to the sensing of phase transition storage/read circuit.
Background technology
Fig. 1 is the sensing circuit figure of a traditional phase transition storage, in Fig. 1, and an electric current I
RFlow through a phase-change memory cell 115 and since the resistance value of phase-change memory cell 115 with its storing state difference, so electric current I
RThe pressure drop that is produced in phase-change memory cell 115 two ends is also different, and this voltage is delivered to a comparer 130, and with a reference voltage V
REFCompare, then can judge the storing state of phase-change memory cell 115, generally speaking, this comparer 130 is an analog circuit, discern subtle difference by designing to declare, but convert the duration of charging of voltage to, so reading speed is slower owing to the resistance capacitance load meeting delayed current on the bit line.
Fig. 2 is the sensing circuit figure of U.S. Pat 5787042 disclosed phase transition storages, in Fig. 2, it charges to Vdd/2 with data bit line earlier, disconnect balanced device again, allow two data bit line voltages begin toward moving in the other direction from precharge potential, the logical value of slow then sense data, because its sensing amplifier is a latch, therefore two input ends are coupled to complementary bit lines respectively, and reception complementary signal, so that enough sensing margins (sensing margin) to be provided, so need expend two storage unit and store a data bit, make that memory cell array area is that the twice of a cell stores one this framework of data bit is big.
Summary of the invention
A kind of sensing circuit of phase transition storage, this sensing circuit comprises a storage capacitors and a reference capacitance, one stores a memory element and a reference memory element, one stores discharge switch and with reference to a discharge switch and a judgment means, first end of this storage capacitors and this reference capacitance is coupled to a pre-charge pressure by one first switch respectively, first end of this storage memory element and this reference memory element is coupled to this first end of this storage capacitors and this reference capacitance respectively by a second switch, this storage discharge switch and this are coupled to second end of this storage memory element and this reference memory element respectively with reference to discharge switch, this judgment means is coupled to this first end of this storage memory element and this reference memory element, and the read result of an output as this storage storage element stores state is provided.
A kind of method for sensing of phase transition storage, it comprises a storage capacitors and a reference capacitance is charged, by a storage memory element and a reference memory element this storage capacitors and this reference capacitance are discharged, and detect the transition time point of a terminal voltage of this storage memory element and this reference memory element, and judge the storing state of this storage memory element with the priority of its transition time point with a judgment means.
For above and other objects of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and be described with reference to the accompanying drawings as follows.
Description of drawings
Figure 1 shows that the sensing circuit figure of a traditional phase transition storage.
Figure 2 shows that the sensing circuit figure of U.S. Pat 5787042 disclosed phase transition storages.
Fig. 3 A and 3B are depicted as the sensing circuit according to the phase transition storage of one embodiment of the invention.
Fig. 3 C is depicted as an embodiment of judgment means among Fig. 3 A and the 3B.
Fig. 3 D is under the input state of different Vdat and Vref, the output state figure of the SR latch shown in Fig. 3 C.
Figure 4 shows that method for sensing process flow diagram according to the phase transition storage of one embodiment of the invention.
The reference numeral explanation
I
R～read electric current;
V
REF～reference voltage;
115～phase-change memory cell;
130～comparer;
300～sensing circuit;
Cst_DAT～storage capacitors;
Cst_REF～reference capacitance;
PCR_DAT～storage memory element;
PCR_REF～reference memory element;
SW_DAT～storage discharge switch;
SW_REF～with reference to discharge switch;
SW1～first switch;
SW2～second switch;
Vpre～pre-charge pressure;
First terminal potential of Vdat～storage memory element PCR_DAT;
First terminal potential of Vref～reference memory element PCR_REF;
410～storage capacitors and a reference capacitance are charged;
420～by a storage memory element and a reference memory element this storage capacitors and this reference capacitance are discharged;
430～detect the transition time point of a terminal voltage of this storage memory element and this reference memory element with a judgment means, and judge the storing state of this storage memory element with the priority of its transition time point.
Embodiment
Fig. 3 A and 3B are depicted as the sensing circuit according to the phase transition storage of one embodiment of the invention, this sensing circuit 300 comprises a storage capacitors Cst_DAT and a reference capacitance Cst_REF, one stores a memory element PCR_DAT and a reference memory element PCR_REF, one stores discharge switch SW_DAT and with reference to a discharge switch SW_REF and a judgment means 310, first end of this storage capacitors Cst_DAT and this reference capacitance Cst_REF is coupled to a pre-charge pressure Vpre by one first switch SW 1 respectively, and its second end is coupled to earth terminal, first end of this storage memory element PCR_DAT and this reference memory element PCR_REF is coupled to this first end of this storage capacitors Cst_DAT and this reference capacitance Cst_REF respectively by a second switch SW2, more particularly, this storage memory element PCR_DAT and this reference memory element PCR_REF are all phase-change memory cell, this storage discharge switch SW_DAT and this are coupled to second end of this storage memory element PCR_DAT and this reference memory element PCR_REF respectively with reference to discharge switch SW_REF, this storage discharge switch SW_DAT and this can be metal oxide semiconductor transistor with reference to discharge switch SW_REF, bipolar transistor, diode or suchlike switch, preferable, this storage discharge switch SW_DAT and this are metal oxide semiconductor transistor with reference to discharge switch SW_REF, this judgment means 310 is coupled to this first end of this storage memory element PCR_DAT and this reference memory element PCR_REF, and receive the current potential Vdat and the Vref of described first end respectively, one output Vout is provided the result that reads as this storage memory element PCR_DAT store status in addition, preferable, this judgment means 310 is a digital circuit.
The operation of the sensing circuit 300 shown in Fig. 3 A and the 3B can be divided into two stages, phase one is a pre-charging stage, as shown in Figure 3A, when pre-charging stage, described first switch SW 1 is closed circuit, described second switch SW2 is for opening circuit, and this storage discharge switch SW_DAT and this with reference to discharge switch SW_REF for opening circuit, at this moment, this storage capacitors Cst_DAT and this reference capacitance Cst_REF are connected between precharge potential Vpre and the ground connection, and this storage capacitors Cst_DAT and this reference capacitance Cst_REF are in charged state this moment.Subordinate phase is the interpretation stage, shown in Fig. 3 B, in interpretation during the stage, described first switch SW 1 is for opening circuit, described second switch SW2 is closed circuit, and this storage discharge switch SW_DAT and this are closed circuit with reference to discharge switch SW_REF, at this moment, this storage capacitors Cst_DAT and this reference capacitance Cst_REF can discharge by this storage memory element PCR_DAT and this reference memory element PCR_REF respectively, because phase-change memory cell has different resistance values under different storage states, therefore, this storage capacitors Cst_DAT can be because of the different differences to some extent of its resistance (store status determines) with the discharge rate of this reference capacitance Cst_REF, in other words, the first terminal potential Vdat of this storage capacitors Cst_DAT and this reference capacitance Cst_REF and Vref are fallen to the transition time point of electronegative potential difference to some extent by noble potential, utilize the priority of the transition time point of judgment means 310 these first terminal potential Vdat of detection and Vref, just can determine the store status of this storage memory element PCR_DAT.
More particularly, this judgment means 310 is a SR latch (SR latch), and shown in Fig. 3 C, its truth table is as follows:
| R | S | Q | Qb |
| 1 | 1 | 0 | 0 |
| 1 | 0 | 0 | 1 |
| 0 | 1 | 1 | 0 |
| 0 | 0 | Constant | Constant |
When the logic state of Vdat and Vref is 1, the output logic state of Vout is 0, when the logic state of Vdat and Vref is respectively 0 and 1, the output logic state of Vout is 0, when the logic state of Vdat and Vref is respectively 1 and 0, the output logic state of Vout is 1, and when the logic state of Vdat and Vref was 0, the output logic state of Vout was kept output state last time.
Fig. 3 D is under the input state of different Vdat and Vref, the output state figure of the SR latch shown in Fig. 3 C, no matter the storing state of storage memory element PCR_DAT why, state and the resistance value of reference memory element PCR_REF are all fixed, therefore the transition time point of Vref is fixed, when storage memory element PCR_DAT is low resistance state, it causes the discharge current of storage capacitors Cst_DAT bigger, therefore the transition time of Vdat early, when Vdat one carries out transition, the SR latch is respectively 0 and 1 according to the logic state of Vdat and Vref, therefore the output logic state of Vout is 0, can learn that therefore storing memory element PCR_DAT is low resistance state; And when storage memory element PCR_DAT is high resistance state, it causes the discharge current of storage capacitors Cst_DAT less, therefore the transition time of Vdat is later, when Vref one carries out transition, the SR latch is respectively 1 and 0 according to the logic state of Vdat and Vref, therefore the output logic state of Vout is 1, can learn that therefore storing memory element PCR_DAT is high resistance state.
Figure 4 shows that method for sensing process flow diagram according to the phase transition storage of one embodiment of the invention, this method for sensing comprises a storage capacitors and a reference capacitance charge (step 410), store memory element and a reference memory element with this storage capacitors and this reference capacitance discharge (step 420) by one, and detect the transition time point of a terminal voltage of this storage memory element and this reference memory element, and judge the storing state (step 430) of this storage memory element with the priority of its transition time point with a judgment means.
Claims (12)
1. the sensing circuit of a phase transition storage comprises:
One storage capacitors and a reference capacitance, its first end is coupled to a pre-charge pressure by one first switch respectively;
One stores a memory element and a reference memory element, and its first end is coupled to this first end of this storage capacitors and this reference capacitance respectively by a second switch;
One stores discharge switch and with reference to discharge switch, is coupled to second end of this storage memory element and this reference memory element respectively; And
One judgment means is coupled to this first end of this storage memory element and this reference memory element, and the read result of an output as this storage storage element stores state is provided.
2. the sensing circuit of phase transition storage as claimed in claim 1, wherein this storage memory element and this reference memory element are phase change component.
3. the sensing circuit of phase transition storage as claimed in claim 1, wherein this judgment means is a digital circuit.
4. the sensing circuit of phase transition storage as claimed in claim 3, wherein this digital circuit is a SR latch.
5. the sensing circuit of phase transition storage as claimed in claim 1, wherein this storage discharge switch and this are metal oxide semiconductor transistor with reference to discharge switch.
6. the sensing circuit of phase transition storage as claimed in claim 1, wherein, in the phase one of reading this storage memory element, described first switch is closed circuit, described second switch is for opening circuit, and this storage discharge switch and this with reference to discharge switch for opening circuit.
7. the sensing circuit of phase transition storage as claimed in claim 1, wherein, in a subordinate phase that reads this storage memory element, described first switch is for opening circuit, and described second switch is closed circuit, and this storage discharge switch and this are closed circuit with reference to discharge switch.
8. the sensing circuit of phase transition storage as claimed in claim 1, the wherein second end ground connection of this storage capacitors and this reference capacitance.
9. the method for sensing of a phase transition storage comprises:
One storage capacitors and a reference capacitance are carried out charge or discharge;
Storing memory element by one discharges this storage capacitors and this reference capacitance with a reference memory element or charges; And
Detect the transition time point of a terminal voltage of this storage memory element and this reference memory element with a judgment means, and judge the storing state of this storage memory element with the priority of its transition time point.
10. the method for sensing of phase transition storage as claimed in claim 9, wherein this storage memory element and this reference memory element are phase change component.
11. the method for sensing of phase transition storage as claimed in claim 9, wherein this judgment means is a digital circuit.
12. the method for sensing of phase transition storage as claimed in claim 11, wherein this digital circuit is a SR latch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101423111A CN101364424A (en) | 2007-08-10 | 2007-08-10 | Sensing circuit and method for phase-change memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101423111A CN101364424A (en) | 2007-08-10 | 2007-08-10 | Sensing circuit and method for phase-change memory |
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| CN101364424A true CN101364424A (en) | 2009-02-11 |
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| CNA2007101423111A Pending CN101364424A (en) | 2007-08-10 | 2007-08-10 | Sensing circuit and method for phase-change memory |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101887747A (en) * | 2009-05-15 | 2010-11-17 | 海力士半导体有限公司 | Phase change memory apparatus |
| CN102169722A (en) * | 2010-02-25 | 2011-08-31 | 复旦大学 | Resistor random access memory for reducing initializing or setting operation power consumption and operating method thereof |
| CN102779553A (en) * | 2011-05-11 | 2012-11-14 | 海力士半导体有限公司 | Non-volatile memory device and sensing method thereof |
| CN103295626A (en) * | 2012-02-28 | 2013-09-11 | 北京时代全芯科技有限公司 | High-precision data reading circuit for phase change memory |
| CN104240746A (en) * | 2013-06-24 | 2014-12-24 | 华邦电子股份有限公司 | Reading circuit and memory device with reading circuit |
| CN105244051A (en) * | 2014-07-07 | 2016-01-13 | 力旺电子股份有限公司 | Voltage switch circuit |
| TWI557529B (en) * | 2016-01-12 | 2016-11-11 | 新唐科技股份有限公司 | Reference voltage circuit |
| CN106415728A (en) * | 2014-06-24 | 2017-02-15 | 英特尔公司 | Reference architecture in a cross-point memory |
| TWI614591B (en) * | 2016-01-12 | 2018-02-11 | 新唐科技股份有限公司 | Pulse signal generating circuit |
| CN109274260A (en) * | 2017-07-17 | 2019-01-25 | 南亚科技股份有限公司 | Electrical voltage system and its operating method |
| CN109903801A (en) * | 2019-03-19 | 2019-06-18 | 中国科学院上海微系统与信息技术研究所 | The data reading circuit and method of phase transition storage |
| CN109935249A (en) * | 2017-12-18 | 2019-06-25 | 三星电子株式会社 | Semiconductor memory system and its long numeric data method for sensing |
| CN111755044A (en) * | 2019-03-26 | 2020-10-09 | 中芯国际集成电路制造(上海)有限公司 | Reading circuit of magnetic memory and magnetic memory |
-
2007
- 2007-08-10 CN CNA2007101423111A patent/CN101364424A/en active Pending
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101887747A (en) * | 2009-05-15 | 2010-11-17 | 海力士半导体有限公司 | Phase change memory apparatus |
| CN102169722A (en) * | 2010-02-25 | 2011-08-31 | 复旦大学 | Resistor random access memory for reducing initializing or setting operation power consumption and operating method thereof |
| CN102169722B (en) * | 2010-02-25 | 2014-01-08 | 复旦大学 | Resistor random access memory for reducing initializing or setting operation power consumption and operating method thereof |
| CN102779553A (en) * | 2011-05-11 | 2012-11-14 | 海力士半导体有限公司 | Non-volatile memory device and sensing method thereof |
| CN102779553B (en) * | 2011-05-11 | 2016-06-22 | 海力士半导体有限公司 | Nonvolatile semiconductor memory member and method for sensing thereof |
| CN103295626A (en) * | 2012-02-28 | 2013-09-11 | 北京时代全芯科技有限公司 | High-precision data reading circuit for phase change memory |
| CN103295626B (en) * | 2012-02-28 | 2016-06-01 | 北京时代全芯科技有限公司 | A kind of high accuracy data reading circuit for phase transition storage |
| CN104240746A (en) * | 2013-06-24 | 2014-12-24 | 华邦电子股份有限公司 | Reading circuit and memory device with reading circuit |
| CN104240746B (en) * | 2013-06-24 | 2017-07-28 | 华邦电子股份有限公司 | Reading circuit and the memory storage with reading circuit |
| CN106415728A (en) * | 2014-06-24 | 2017-02-15 | 英特尔公司 | Reference architecture in a cross-point memory |
| CN106415728B (en) * | 2014-06-24 | 2019-03-08 | 英特尔公司 | Frame of reference in cross point memory |
| CN105244051A (en) * | 2014-07-07 | 2016-01-13 | 力旺电子股份有限公司 | Voltage switch circuit |
| CN105244051B (en) * | 2014-07-07 | 2018-05-25 | 力旺电子股份有限公司 | Sensing amplifier |
| TWI557529B (en) * | 2016-01-12 | 2016-11-11 | 新唐科技股份有限公司 | Reference voltage circuit |
| TWI614591B (en) * | 2016-01-12 | 2018-02-11 | 新唐科技股份有限公司 | Pulse signal generating circuit |
| CN109274260A (en) * | 2017-07-17 | 2019-01-25 | 南亚科技股份有限公司 | Electrical voltage system and its operating method |
| CN109935249A (en) * | 2017-12-18 | 2019-06-25 | 三星电子株式会社 | Semiconductor memory system and its long numeric data method for sensing |
| CN109935249B (en) * | 2017-12-18 | 2024-04-05 | 三星电子株式会社 | Semiconductor memory device and multi-bit data sensing method thereof |
| CN109903801A (en) * | 2019-03-19 | 2019-06-18 | 中国科学院上海微系统与信息技术研究所 | The data reading circuit and method of phase transition storage |
| CN109903801B (en) * | 2019-03-19 | 2021-04-02 | 中国科学院上海微系统与信息技术研究所 | Data reading circuit and method of phase change memory |
| CN111755044A (en) * | 2019-03-26 | 2020-10-09 | 中芯国际集成电路制造(上海)有限公司 | Reading circuit of magnetic memory and magnetic memory |
| CN111755044B (en) * | 2019-03-26 | 2022-04-15 | 中芯国际集成电路制造(上海)有限公司 | Reading circuit of magnetic memory and magnetic memory |
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