CN101359440B - Compensating circuit for improving threshold voltage off set and process thereof - Google Patents
Compensating circuit for improving threshold voltage off set and process thereof Download PDFInfo
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- CN101359440B CN101359440B CN 200710138193 CN200710138193A CN101359440B CN 101359440 B CN101359440 B CN 101359440B CN 200710138193 CN200710138193 CN 200710138193 CN 200710138193 A CN200710138193 A CN 200710138193A CN 101359440 B CN101359440 B CN 101359440B
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Abstract
Disclosed are a compensation circuit and the method thereof for improving the threshold voltage offset. The compensation circuit comprises a current sensor and a voltage regulation device. The current is used for sensing the current responded and generated after the amorphous silicon gate driver receives the first operating voltage and the second operating voltage. The current sensor outputs the sensing current according to the operating current. The voltage regulation device correspondingly regulates the second operating voltage according to the sensing current to improve the threshold voltage offset.
Description
Technical field
The invention relates to a kind of compensating circuit and method thereof of improvement threshold variation, and particularly relevant for a kind of compensating circuit and method thereof of improving the threshold voltage shift of amorphous silicon gate could driver.
Background technology
Along with the growth of amorphous silicon manufacturing technology, industry can utilize amorphous silicon grid manufacturing technology (Amorphous Silicon Gate, ASG) that gate drivers is integrated on the display panel now, and this gate drivers is called again the amorphous silicon gate could driver.Because the amorphous silicon gate could driver is by (the Amorphous Silicon Thin Film Transistor of the amorphous silicon film transistor in the display panel, a-si TFT) forms, therefore, can reduce the user demand of original driving chip and the number of contacts of external spare part, will improve the fiduciary level of product and reduce production costs.
Please refer to Fig. 1, it shows the schematic diagram of traditional amorphous silicon liquid crystal display.The source electrode driver 130 that tradition amorphous silicon liquid crystal display 10 comprises display panel 110, control circuit board 120, be comprised of a plurality of source driving chips 132 and utilize amorphous silicon grid manufacturing technology to be integrated in amorphous silicon gate could driver 140 on the display panel 110.
Please refer to Fig. 2, it shows the calcspar of amorphous silicon gate could driver.Amorphous silicon gate could driver 140 is by shift register SR
1To SR
N+1Form.Shift register SR
1To SR
N+1All receive the first operating voltage V
SSAnd the second operating voltage V
DD, and shift register SR
1, SR
3To SR
N+1Receive clock pulse signal CK1, and shift register SR
2, SR
4To SR
NReceive clock pulse signal CK2.
When start signal STV inputs to shift register SR
1After, shift register SR
1According to clock pulse signal CK1 with scanning drive signal OUT
1Changed into by the disable level and to enable level.Afterwards, shift register SR
2At scanning drive signal OUT
1Change into enable level after, according to clock pulse signal CK2 with scanning drive signal OUT
2Changed into by the disable level and to enable level, and control shift register SR
1With scanning drive signal OUT
1Change into the disable level by enabling level.Then, shift register SR
3At scanning drive signal OUT
2Change into enable level after, according to clock pulse signal CK1 with scanning drive signal OUT
3Changed into by the disable level and to enable level, and control shift register SR
2With scanning drive signal OUT
2Change into the disable level by enabling level, by that analogy.
Because scanning drive signal OUT
1To OUT
NVoltage level be shifted in order register SR
1To SR
N+1Change, therefore, each row pixel 112 of display panel 110 will be according to OUT
1To OUT
NVoltage level change, and be unlocked in order or close.
Please be simultaneously with reference to Fig. 3 and Fig. 4, Fig. 3 shows the internal circuit diagram of shift registers at different levels, and Fig. 4 shows the detailed circuit diagram of shift registers at different levels.Shift-register circuit 1400 is the internal circuit of shift registers at different levels.Shift-register circuit 1400 comprises amorphous silicon film transistor M1, amorphous silicon film transistor M2 and trigger 1410, and trigger 1410 comprises amorphous silicon film transistor T1 to T5 and capacitor C 1.The reversed-phase output QB of the gate terminal of amorphous silicon film transistor T3 and amorphous silicon film transistor M2 and trigger 1410 is electrically connected.
Please refer to Fig. 5, it shows the oscillogram of amorphous silicon gate could driver.Because the gate terminal of reversed-phase output QB and amorphous silicon film transistor T3 and M2 is electrically connected, and the waveform by reversed-phase output QB among Fig. 5 can be clear that, reversed-phase output QB maintains for a long time high voltage and enables level, therefore, amorphous silicon film transistor T3 and M2 will produce seriously threshold voltage shift (Threshold Voltage Shift).
Please refer to Fig. 6, it shows the schematic diagram of threshold voltage shift.Threshold voltage shift is called again VT Stress, and namely the threshold voltage of amorphous silicon film transistor will change in time.And the amorphous silicon membrane transistor under different time channel current Id and the relation of grid voltage Vg shown in the curve 710,720 and 730 of Fig. 6.
Amorphous silicon film transistor is when initial (Inital) state, and the relation of channel current Id and grid voltage Vg is shown in curve 710.When after after a while, the relation of channel current Id and grid voltage Vg will change into shown in curve 720.When again after after a while, the relation of channel current Id and grid voltage Vg then changes into shown in curve 730.Hence one can see that, even if keep the identical grid voltage Vg of amorphous silicon film transistor, but its channel current Id will descend along with the increase of time.
Yet, when amorphous silicon film transistor generation threshold voltage shift, not only will affect the normal operation of amorphous silicon gate could driver, also will reduce the serviceable life of amorphous silicon gate could driver thereupon.
Summary of the invention
In view of this, purpose of the present invention just provides a kind of compensating circuit and method thereof of improvement threshold variation.After the amorphous silicon gate could driver receives the first operating voltage and the second operating voltage, will produce working current with responding.This working current of compensating circuit sensing is also adjusted the voltage level of the second operating voltage according to this, with improvement threshold variation phenomenon.On the one hand can not only avoid threshold voltage shift and affect the normal operation of amorphous silicon gate could driver, the serviceable life that more can improve by this on the other hand the amorphous silicon gate could driver.
According to purpose of the present invention, a kind of compensating circuit of improvement threshold variation is proposed.After receiving the first operating voltage and the second operating voltage, institute responds the working current of generation to current sensor in order to sensing amorphous silicon gate could driver.Current sensor and according to working current output sensing electric current to voltage adjusting device.Voltage adjusting device is adjusted the second operating voltage accordingly according to induction current, to keep the normal operation of amorphous silicon gate could driver and to improve the threshold voltage shift of amorphous silicon gate could driver.
According to another object of the present invention, a kind of liquid crystal display is proposed.Liquid crystal display comprises the display panel with a plurality of pixels, the compensating circuit that is formed on amorphous silicon gate could driver, source electrode driver and improvement threshold variation on the display panel.The amorphous silicon gate could driver is in order to unlatching or close pixel, and source electrode driver is in order to input image data to pixel.
The compensating circuit of improvement threshold variation comprises current sensor and voltage adjusting device.After receiving the first operating voltage and the second operating voltage, institute responds the working current of generation to current sensor in order to sensing amorphous silicon gate could driver, current sensor and according to working current output sensing electric current to voltage adjusting device.Voltage adjusting device is adjusted the second operating voltage accordingly according to induction current, to keep the normal operation of amorphous silicon gate could driver and to improve the threshold voltage shift of amorphous silicon gate could driver.
According to another object of the present invention, a kind of compensation method of improvement threshold variation is proposed.The compensation method of improvement threshold variation comprises the steps:
At first, input respectively the first operating voltage and the second operating voltage to the amorphous silicon gate could driver, the amorphous silicon gate could driver will produce a working current with responding.
Then, the working current that sensing amorphous silicon gate could driver produces, and export according to this an induction current.
At last, adjust accordingly the voltage level of the second operating voltage according to faradic size, to improve the threshold voltage shift of amorphous silicon gate could driver.
According to a further object of the present invention, a kind of compensation method of improvement threshold variation is proposed.The compensation method of improvement threshold variation comprises the steps:
At first, input respectively the first operating voltage and the second operating voltage to the amorphous silicon gate could driver, the amorphous silicon gate could driver will produce a working current with responding.
Then, provide current sensor, and the working current that utilizes current sensor sensing amorphous silicon gate could driver to produce, and export according to this an induction current.
And then, provide voltage adjusting device, voltage adjusting device is adjusted the voltage level of the second operating voltage accordingly according to faradic size, to keep the normal operation of amorphous silicon gate could driver and to improve the threshold voltage shift of amorphous silicon gate could driver.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperation accompanying drawing are described in detail below.
Description of drawings
Fig. 1 shows the schematic diagram of traditional amorphous silicon liquid crystal display;
Fig. 2 shows the calcspar of amorphous silicon gate could driver;
Fig. 3 shows the internal circuit diagram of shift registers at different levels;
Fig. 4 shows the detailed circuit diagram of shift registers at different levels;
Fig. 5 shows the oscillogram of amorphous silicon gate could driver;
Fig. 6 shows the schematic diagram of threshold voltage shift;
Fig. 7 shows the liquid crystal display of improvement threshold variation;
Fig. 8 shows the calcspar according to the compensating circuit 220 of first embodiment of the invention;
Fig. 9 shows the schematic diagram of improvement threshold variation;
Figure 10 shows the schematic diagram that compensating circuit 220 is disposed at control circuit board;
Figure 11 shows the process flow diagram according to the compensation method of first embodiment of the invention;
Figure 12 shows the calcspar according to the compensating circuit 320 of second embodiment of the invention;
Figure 13 shows the schematic diagram that compensating circuit 320 is disposed at control circuit board;
Figure 14 shows the process flow diagram according to the compensation method of second embodiment of the invention.
Embodiment
Owing to after the amorphous silicon gate could driver receives the first operating voltage and the second operating voltage, will produce a working current with responding.Therefore, following embodiment is by the working current of sensing amorphous silicon gate could driver, adjust the voltage level of the second operating voltage, to keep the normal operation of amorphous silicon gate could driver and improvement threshold variation (Threshold Voltage Shift) phenomenon (or being called VT Stress).
Please refer to Fig. 7, it shows the liquid crystal display of improvement threshold variation.Liquid crystal display 20 comprises and showing and compensating circuit 220, the source electrode driver 230 of plate 210, improvement threshold variation and utilize amorphous silicon grid manufacturing technology (Amorphous Silicon Gate, ASG) to be formed on the amorphous silicon gate could driver 240 on the display panel 210.Source electrode driver 230 for example is comprised of a plurality of source driving chip, and source electrode driver 230 is used for image data corresponding to input to the pixel 212 of display panel 210.
Amorphous silicon gate could driver 240 receives the first operating voltage V
SS, the second operating voltage V
DD, clock pulse signal CK1, clock pulse signal CK2 and start signal STV, and sequentially change according to this scanning drive signal OUT
1To OUT
NVoltage level.Each row pixel 212 is according to scanning drive signal OUT
1To OUT
NFor enabling level or disable level, to be unlocked in order or to close.
Amorphous silicon gate could driver 240 through its first operating voltage input end and the second operating voltage input end to receive the first operating voltage V
SSAnd the second operating voltage V
DDAmorphous silicon gate could driver 240 is also receiving the first operating voltage V
SSAnd the second operating voltage V
DDAfter, respond ground and produce working current I
SSThe first operating voltage input end of flowing through.
Affect the normal operation of amorphous silicon gate could driver 240 for fear of the threshold voltage shift phenomenon, compensating circuit 220 senses flow are through the working current I of the first operating voltage input end
SS, and adjust according to this second operating voltage V
DDVoltage level, to keep the normal operation of amorphous silicon gate could driver and to improve threshold voltage shift in the amorphous silicon gate could driver 240.
The first embodiment
Please refer to Fig. 8, it shows the calcspar according to the compensating circuit 220 of first embodiment of the invention.Compensating circuit 220 comprises current sensor 222 (Current Sensor) and voltage adjusting device 224.Current sensor 222 is in order to sensing working current I
SS, and export according to this induction current I
SenVoltage adjusting device 224 is according to induction current I
SenSize adjust the second operating voltage V with correspondence
DDVoltage level.
Voltage adjusting device 224 comprises comparer 2242 and voltage output unit 2244.Comparer 2242 is induction current I relatively
SenWith reference current value I
RefWhether identical, and output comparison signal S1 is to voltage output unit 2244.If induction current I
SenGreater than reference current value I
Ref, voltage output unit 2244 namely according to comparison signal S1 with the second operating voltage V
DDBe reduced to the second voltage level by the first voltage level.On the contrary, if induction current I
SenLess than reference current value I
Ref, voltage output unit 2244 namely according to comparison signal S1 with the second operating voltage V
DDIncrease to the second voltage level by the first voltage level, to improve the threshold voltage shift in the amorphous silicon gate could driver 240.In addition, when current sensor 222 under original state, and non-inductive electric current I
SenDuring generation, compensating circuit 220 also can be directly according to reference current value I
RefSize, the second initial operating voltage V is provided
DDTo amorphous silicon gate could driver 240.
Furthermore, voltage output unit 2244 comprises voltage generator (VoltageGenerator) 22442, low-pass filter (Low Pass Filter) 22444 and output buffer (Output Buffer) 22446.Voltage generator 22442 is exported the first voltage signal S2 according to comparison signal S1.Output second voltage signal S3 behind the radio-frequency component of low-pass filter 22444 filterings the first voltage signal S2.Output buffer 22446 with second voltage signal S3 Hyblid Buffer Amplifier after output the second operating voltage V
DD
Please refer to Fig. 9, it shows the schematic diagram of improvement threshold variation.Because amorphous silicon gate could driver 240 is by amorphous silicon film transistor (Amorphous Silicon Thin FilmTransistor, a-si TFT) forms, therefore, the threshold voltage shift phenomenon of amorphous silicon film transistor will affect the normal operation of amorphous silicon gate could driver 240.
When amorphous silicon film transistor under original state, the relation of its channel current Id and grid voltage Vg is shown in curve 610.And when amorphous silicon film transistor after through one period running time, the pass of its channel current Id and grid voltage Vg will be shown in curve 620.
Behind amorphous silicon film transistor generation threshold voltage shift, the corresponding channel current Id of grid voltage Vg1 will drop to current value I 1 by original reference current value Iref.For fear of the lasting deterioration of threshold voltage shift, compensating circuit 220 is by sensing working current I
SSAdjust the second operating voltage V
DD, so that channel current Id returns back to reference current value Iref by current value I 1, to keep the normal operation of amorphous silicon gate could driver and to improve the threshold voltage shift of amorphous silicon gate could driver.
Please refer to Figure 10, it shows the schematic diagram that compensating circuit 220 is configured in control circuit board.Above-mentioned compensating circuit 220 can be integrated into an integrated circuit (Integrated Circuit, IC), or is configured in as shown in figure 10 in the control circuit board 250.
When compensating circuit 220 was configured in control circuit board 250, control circuit board 250 can not only provide clock pulse signal CK1, clock pulse signal CK2 and start signal STV to amorphous silicon gate could driver 240, more can be according to working current I
SSAdjust the second operating voltage V
DDVoltage level, to keep the normal operation of amorphous silicon gate could driver and to improve threshold voltage shift in the amorphous silicon gate could driver 240.
Please refer to Figure 11, it shows the process flow diagram according to the compensation method of first embodiment of the invention.Compensation method utilizes compensating circuit 220 to improve the threshold voltage shift of amorphous silicon gate could driver 240, and compensation method comprises the steps:
At first as described in the step 410, input respectively the first operating voltage V
SSAnd the second operating voltage V
DDThe first operating voltage input end and the second operating voltage input end to amorphous silicon gate could driver 240.Amorphous silicon gate could driver 240 is according to the first operating voltage V
SSAnd the second operating voltage V
DDRespond the working current I that ground produces the first operating voltage input end of flowing through
SS
Follow shown in step 420 current sensor 222 sensing working current I
SS, and export according to this induction current I
SenTo comparer 2242.And then shown in step 430, comparer 2242 is induction current I relatively
SenWith reference current value I
RefWhether identical, and export according to this comparison signal S1 to voltage output unit 2244.
Then shown in step 440, voltage output unit 2244 is adjusted the second operating voltage V according to comparison signal S1
DDWherein, as induction current I
SenLess than reference current value I
RefThe time, voltage output unit 2244 according to comparison signal S1 with the second operating voltage V
DDIncrease to the second voltage level by the first voltage level.On the contrary, as induction current I
SenGreater than reference current value I
RefThe time, voltage output unit 2244 according to comparison signal S1 with the second operating voltage V
DDBe reduced to the second voltage level by the first voltage level.
The second embodiment
Please refer to Figure 12, it shows the calcspar according to the compensating circuit 320 of second embodiment of the invention.Compensating circuit 320 and compensating circuit 220 are different be in:
The voltage adjusting device 324 of compensating circuit 320 also comprises current-to-voltage convertor 3246.Current-to-voltage convertor 3246 is with induction current I
SenBe converted to induced voltage V
SenExport comparer 3242 to.
Comparer 3242 is induced voltage V relatively
SenWith reference voltage level V
RefWhether identical, and output comparison signal S4 is to voltage output unit 2244.Wherein, reference voltage level V
RefAccording to reference current value I
RefAnd get.
If induced voltage V
SenGreater than reference voltage level V
Ref, voltage output unit 2244 namely according to comparison signal S4 with the second operating voltage V
DDBe reduced to the second voltage level by the first voltage level.On the contrary, if induced voltage V
SenLess than reference voltage level V
Ref, voltage output unit 2244 namely according to comparison signal S4 with the second operating voltage V
DDIncrease to the second voltage level by the first voltage level, to keep the normal operation of amorphous silicon gate could driver and to improve threshold voltage shift in the amorphous silicon gate could driver 240.
Please refer to Figure 13, it shows the schematic diagram that compensating circuit 320 is configured in control circuit board.Above-mentioned compensating circuit 320 can be integrated into an integrated circuit (Integrated Circuit, IC), or is configured in as shown in figure 13 in the control circuit board 350.
When compensating circuit 320 was configured in control circuit board 350, control circuit board 350 can not only provide clock pulse signal CK1, clock pulse signal CK2 and start signal STV to amorphous silicon gate could driver 240, more can be according to working current I
SSAdjust the second operating voltage V
DDVoltage level, to improve the threshold voltage shift in the amorphous silicon gate could driver 240.
Please refer to Figure 14, it shows the process flow diagram according to the compensation method of second embodiment of the invention.Compensation method utilizes compensating circuit 320 to improve the threshold voltage shift of amorphous silicon gate could driver 240, and compensation method comprises the steps:
At first as described in the step 510, input respectively the first operating voltage V
SSAnd the second operating voltage V
DDThe first operating voltage input end and the second operating voltage input end to amorphous silicon gate could driver 240.Amorphous silicon gate could driver 240 is according to the first operating voltage V
SSAnd the second operating voltage V
DDRespond the working current I that ground produces the first operating voltage input end of flowing through
SS
Follow shown in step 520 current sensor 222 sensing working current I
SS, and export according to this induction current I
SenTo current-to-voltage convertor 3246.And then shown in step 530, current-to-voltage convertor 3246 is with induction current I
SenBe converted to induced voltage V
SenExport comparer 3242 to.
Then shown in step 540, comparer 3242 is induced voltage V relatively
SenWith reference voltage level V
RefWhether identical, and export according to this comparison signal S4 to voltage output unit 2244.
Shown in step 550, voltage output unit 2244 is adjusted the second operating voltage V according to comparison signal S4 at last
DDWherein, as induced voltage V
SenLess than reference voltage level V
RefThe time, voltage output unit 2244 according to comparison signal S4 with the second operating voltage V
DDIncrease to the second voltage level by the first voltage level.On the contrary, as induced voltage V
SenGreater than reference voltage level V
RefThe time, voltage output unit 2244 according to comparison signal S4 with the second operating voltage V
DDBe reduced to the second voltage level by the first voltage level.
As previously mentioned, compensating circuit 220 and compensating circuit 320 are by sensing working current I
SS, to adjust accordingly the second operating voltage V
DDVoltage level, and then the speed of worsening that keeps the normal operation of amorphous silicon gate could driver and slow down threshold voltage shift.
The disclosed compensating circuit of the above embodiment of the present invention and compensation method are by sensing working current I
SS, to adjust accordingly the second operating voltage V
DDVoltage level.Can not only avoid threshold voltage shift and affect the normal operation of amorphous silicon gate could driver, the serviceable life that more can improve by this amorphous silicon gate could driver.
In sum, although the present invention discloses as above with a preferred embodiment, so it is not to limit the present invention.The technical staff in the technical field of the invention, without departing from the spirit and scope of the present invention, when doing various changes and retouching.Therefore, protection scope of the present invention is as the criterion when looking accompanying claim.
Claims (6)
1. the compensating circuit of an improvement threshold variation comprises:
Current sensor, after receiving the first operating voltage and the second operating voltage, institute responds the working current of generation in order to sensing amorphous silicon gate could driver, and exports an induction current according to this working current; And
Voltage adjusting device, in order to adjusting accordingly this second operating voltage according to this induction current,
Wherein this voltage adjusting device comprises:
Current-to-voltage convertor is in order to be converted to induced voltage with this induction current;
Comparer in order to relatively whether this induced voltage is identical with reference voltage level, and is exported a comparison signal according to this; And
Voltage output unit, in order to adjusting this second operating voltage according to this comparison signal,
Wherein this voltage output unit comprises:
Voltage generator is in order to export one first voltage signal according to this comparison signal;
Low-pass filter is in order to the radio-frequency component of this first voltage signal of filtering, to export a second voltage signal; And
Output buffer, in order to will be behind this second voltage signal Hyblid Buffer Amplifier this second operating voltage of output, and
Wherein this amorphous silicon gate could driver has the first operating voltage input end and the second operating voltage input end, this the first operating voltage input end and this second operating voltage input end receive respectively this first operating voltage and this second operating voltage, this working current first operating voltage input end of flowing through.
2. compensating circuit as claimed in claim 1, wherein when this induced voltage during greater than this reference voltage level, this voltage output unit is reduced to second voltage level with this second operating voltage by the first voltage level according to this comparison signal.
3. compensating circuit as claimed in claim 1, wherein when this induced voltage during less than this reference voltage level, this voltage output unit increases to second voltage level with this second operating voltage by the first voltage level according to this comparison signal.
4. liquid crystal display comprises:
Display panel comprises a plurality of pixels;
The amorphous silicon gate could driver, this amorphous silicon gate could driver is formed at this display panel, this amorphous silicon gate could driver is in order to unlatching or close described these pixels, and this amorphous silicon gate could driver is responded ground and produced a working current after receiving the first operating voltage and the second operating voltage;
Source electrode driver is in order to input image data to described these pixels; And
Compensating circuit comprises:
Current sensor in order to this working current of sensing, and is exported an induction current according to this; And
Voltage adjusting device, in order to according to this induction current adjusting this second operating voltage,
Wherein this voltage adjusting device comprises:
Comparer in order to relatively whether this induction current is identical with reference current value, and is exported a comparison signal according to this; And
Voltage output unit, in order to adjusting this second operating voltage according to this comparison signal,
Wherein this voltage output unit comprises:
Voltage generator is in order to export one first voltage signal according to this comparison signal;
Low-pass filter is in order to the radio-frequency component of this first voltage signal of filtering, to export a second voltage signal; And
Output buffer, in order to will be behind this second voltage signal Hyblid Buffer Amplifier this second operating voltage of output, and
Wherein this amorphous silicon gate could driver has the first operating voltage input end and the second operating voltage input end, this the first operating voltage input end and this second operating voltage input end receive respectively this first operating voltage and this second operating voltage, this working current first operating voltage input end of flowing through.
5. the compensation method of an improvement threshold variation comprises:
(a) input respectively the first operating voltage and the second operating voltage to the amorphous silicon gate could driver, this amorphous silicon gate could driver will produce a working current with responding;
(b) this working current of sensing, and export according to this an induction current; And
(c) adjust this second operating voltage according to this induction current,
Wherein this step (c) comprising:
(c1) this induction current is converted to an induced voltage;
(c2) relatively whether this induced voltage is identical with reference voltage level, and exports according to this a comparison signal; And
(c3) adjust this second operating voltage according to this comparison signal
Wherein this step (c3) comprising:
(c3-1) export one first voltage signal according to this comparison signal;
(c3-2) behind the radio-frequency component of this first voltage signal of filtering, export a second voltage signal; And
(c3-3) with behind this second voltage signal Hyblid Buffer Amplifier, export this second operating voltage,
Wherein this amorphous silicon gate could driver has the first operating voltage input end and the second operating voltage input end, this the first operating voltage input end and this second operating voltage input end receive respectively this first operating voltage and this second operating voltage, this working current first operating voltage input end of flowing through.
6. the compensation method of an improvement threshold variation comprises:
(a) input respectively the first operating voltage and the second operating voltage to the amorphous silicon gate could driver, this amorphous silicon gate could driver will produce a working current with responding;
(b) provide current sensor, this this working current of current sensor sensing, and export according to this an induction current; And
(c) provide voltage adjusting device, this voltage adjusting device is adjusted this second operating voltage according to this induction current,
Wherein in this step (c), this voltage adjusting device comprises comparer and voltage output unit, and this step (c) comprising:
(c1) relatively whether this induction current is identical with reference current value for this comparer, and exports according to this a comparison signal; And
(c2) this voltage output unit is adjusted this second operating voltage according to this comparison signal,
Wherein in this step (c2), this voltage output unit comprises voltage generator, low-pass filter and output buffer, and this step (c2) comprising:
(c2-1) this voltage generator is exported one first voltage signal according to this comparison signal;
(c2-2) behind the radio-frequency component of this first voltage signal of this low pass filter filters out, export a second voltage signal; And
(c2-3) this output buffer with this second voltage signal Hyblid Buffer Amplifier after, export this second operating voltage, and
Wherein this amorphous silicon gate could driver has the first operating voltage input end and the second operating voltage input end, this the first operating voltage input end and this second operating voltage input end receive respectively this first operating voltage and this second operating voltage, this working current first operating voltage input end of flowing through.
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| CN 200710138193 CN101359440B (en) | 2007-07-31 | 2007-07-31 | Compensating circuit for improving threshold voltage off set and process thereof |
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|---|---|---|---|
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| CN1157450A (en) * | 1995-03-06 | 1997-08-20 | 汤姆森多媒体公司 | Liquid crystal display driver with threshold voltage drift compensation |
| US6236393B1 (en) * | 1997-10-31 | 2001-05-22 | Sharp Kabushiki Kaisha | Interface circuit and liquid crystal driving circuit |
| CN1783346A (en) * | 2004-10-28 | 2006-06-07 | 阿尔卑斯电气株式会社 | Shift register and liquid crystal driver |
| CN1794332A (en) * | 2004-12-22 | 2006-06-28 | 阿尔卑斯电气株式会社 | Driver circuit, shift register, and liquid crystal driver circuit |
-
2007
- 2007-07-31 CN CN 200710138193 patent/CN101359440B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5001481A (en) * | 1990-01-30 | 1991-03-19 | David Sarnoff Research Center, Inc. | MOS transistor threshold compensation circuit |
| CN1157450A (en) * | 1995-03-06 | 1997-08-20 | 汤姆森多媒体公司 | Liquid crystal display driver with threshold voltage drift compensation |
| US6236393B1 (en) * | 1997-10-31 | 2001-05-22 | Sharp Kabushiki Kaisha | Interface circuit and liquid crystal driving circuit |
| CN1783346A (en) * | 2004-10-28 | 2006-06-07 | 阿尔卑斯电气株式会社 | Shift register and liquid crystal driver |
| CN1794332A (en) * | 2004-12-22 | 2006-06-28 | 阿尔卑斯电气株式会社 | Driver circuit, shift register, and liquid crystal driver circuit |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2006-174294A 2006.06.29 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101359440A (en) | 2009-02-04 |
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