CN101359181A - Photolithographic exposure method and exposure system - Google Patents
Photolithographic exposure method and exposure system Download PDFInfo
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- CN101359181A CN101359181A CNA2007100445626A CN200710044562A CN101359181A CN 101359181 A CN101359181 A CN 101359181A CN A2007100445626 A CNA2007100445626 A CN A2007100445626A CN 200710044562 A CN200710044562 A CN 200710044562A CN 101359181 A CN101359181 A CN 101359181A
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Abstract
The invention discloses an exposure method of lithography, comprising the following steps: detecting the distribution of the stray light on a substrate through a detection chip; determining the location of an exposure field on the substrate; according to the stray light distribution detected by the detection chip and the determined location, calculating the average of the stray light in the exposure field; determining the exposure parameters of the exposure field, according to the average of the stray light in the exposure field; exposing the exposure field based on the exposure parameters; moving to the next field to be exposed on the substrate; and repeating the steps of determining the location of the field to be exposed, calculating the stray light average, determining the exposure parameters and exposing, until all the exposure fields on the substrate are exposed. The invention also discloses an exposure system which can realize the exposure method. The application of the exposure method or the exposure system can make up the stray light impact on the sizes of the formed graphics, and improve the accuracy and consistency of the sizes of the graphics.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of exposure method of photoetching and exposure system.
Background technology
The making of semi-conductor chip is divided into multilayer, and the making of each layer all needs to carry out figure and limit, forming ad hoc structure, as, forming contact hole structure or metal connection structure etc., the figure of these ad hoc structures limits normally to be realized by photoetching process.So-called photoetching is one and utilizes lithography mask version that the structure graph of design is transferred to technological process on the wafer.In semiconductor fabrication, photoetching process is in the status at center, is most important processing step during integrated circuit is produced, and how to be reflected in the figure that designs on the lithography mask version exactly, transferring on the semiconductor wafer, is one of emphasis problem of paying close attention in the semiconductor fabrication.
In the photoetching process, the factor that influences the figure transfer quality is a lot, as, the parasitic light that produces when exposure will produce certain influence to the figure transfer quality.The image planes of the optical imaging system of exposure machine not only receive imaging light usually, also can receive non-imaging light.The non-imaging light that this part arrives the optical system image planes just is called parasitic light.The existence of parasitic light not only can be lowered into image contrast, also can cause the variation of dimension of picture.The size of parasitic light can be subjected to the influence of various factors such as structure, material and pollution of projection lithography system, in addition, even in same projection lithography system, also can be different to the parasitic light that different lithography mask versions produces.
When the dimension of picture that photoetching forms is big, formation quality to figure often requires lower, its the figure deviation that can tolerate is bigger usually, at this moment, even exist certain parasitic light to cause the size of figure that a little deviation has taken place, as deviation tens nanometers, can not cause too much influence to the formation quality of product yet.Therefore, for large-sized litho pattern, parasitic light is not added to consider to the influence of graphical quality when not needing exposure usually.
Yet, along with developing rapidly of VLSI (very large scale integrated circuit), the integrated level of chip is more and more higher, characteristic dimension (the CD of device, Critical Dimension) more and more littler, the dimension of picture deviation that is allowed in photoetching process also correspondingly reduces, and especially reaches in 90nm and the following technology in characteristic dimension, usually require the dimensional discrepancy of figure is limited within several nanometers, this has just proposed more strict requirement to photoetching technique.At this moment, the deviation of the dimension of picture that brings because of parasitic light that can tolerate when dimension of picture is big can't stand, must be revised it.
Fig. 1 is the synoptic diagram of the existing parasitic light of explanation to the influence of dimension of picture, and as shown in Figure 1, horizontal ordinate has been represented the relative intensity of parasitic light among the figure, and ordinate has been represented the variation of dimension of picture.In the ideal case, the size of the various figures of formation all should be 65nm (being that parasitic light is) at 0 o'clock.Yet as shown in fig. 1, because the existence of parasitic light, certain deviation can take place in the dimension of picture after the actual exposure that obtains, and along with the enhancing of parasitic light, different variations can take place the size of different graphic.Among Fig. 1 101 represented the situation of change that the CD of the groove figure (butting gap) between line end increases gradually along with the enhancing of parasitic light; 102,103 and 104 have represented the situation of change that the CD of intensive bar pattern (dense line), details in a play not acted out on stage, but told through dialogues bar pattern (dark field line) and bar shaped line end figure (buttingline) reduces gradually along with the enhancing of parasitic light respectively.Can see that the CD of various figures has produced different variations along with the enhancing of parasitic light, depart from normal value gradually.Wherein, when parasitic light intensity is big, the departure of dimension of picture even can reach about 15nm, this can not put up with for small size device.
In addition, the distribution of parasitic light on a substrate is uneven often, like this, zones of different at same substrate, even identical figure, the deviation situation of the dimension of picture that causes because of parasitic light also can have nothing in common with each other, and this has caused the consistance of the figure that forms on same substrate relatively poor.
In order to eliminate the influence of parasitic light to photoetching process, the Chinese patent application that disclosed publication number was CN1655064A on August 17th, 2005 has proposed a kind of in-situ detection method for stray light, it can distinguish the source of parasitic light, so that take measures to eliminate parasitic light at the source of parasitic light.But adopt the used detection system of this detection method comparatively complicated, needing four can the pinpoint slit edge of a knife, special mask, energy sensor etc., and this method also needs to adopt extra method to eliminate parasitic light, realizes comparatively complexity, and cost is higher.
In addition, the Chinese patent application that disclosed publication number was CN1641485A on July 20th, 2005 has also proposed a kind of method of eliminating parasitic light to the influence of litho pattern size, this method is after detection obtains the deviation of parasitic light to dimension of picture, by adjusting dimension of picture on the lithography mask version or changing the deviation that method such as development conditions is come the dimension of picture that the modifying factor parasitic light causes, but this method reckons without the different problem of distribution at the zones of different parasitic light of entire substrate, therefore, can not improve dimension of picture and the phenomenon of deviation occur because of parasitic light in the entire substrate scope, the figure of formation still can not meet the demands for existing semiconductor fabrication aspect accuracy and the consistance.
Summary of the invention
The invention provides a kind of exposure method and exposure system of photoetching, dimension of picture is subjected to stray light the phenomenon of deviation to occur in the time of can improving exposure in the entire substrate scope.
The exposure method of a kind of photoetching provided by the invention comprises step:
Utilize detection lug to detect the distribution situation of parasitic light on substrate;
Determine to treat the position of exposure field on described substrate;
Detect the distribution situation and the described position of the parasitic light that obtains according to described detection lug, calculate the described parasitic light mean value for the treatment of exposure field;
Determine the described exposure parameter for the treatment of exposure field according to the described parasitic light mean value of exposure field for the treatment of;
According to described exposure parameter the described exposure field for the treatment of is exposed;
The next one that moves on the described substrate is treated exposure field, repeats above-mentionedly to determine to treat the exposure field position, calculates parasitic light mean value, determines exposure parameter and step of exposing, and each exposure field on described substrate is all finished exposure.
Wherein, determine the exposure parameter that each treats exposure field, comprise step according to described parasitic light mean value:
Determine the described figure departure for the treatment of exposure field according to described parasitic light mean value;
Determine the described exposure parameter for the treatment of exposure field according to the described described figure departure of exposure field for the treatment of.
Wherein, after the parasitic light mean value of exposure field is treated in calculating, also comprise step:
Judge describedly treat whether the figure in the exposure field is simple graph: if can directly determine the described exposure parameter for the treatment of exposure field according to described parasitic light mean value; If not, then take all factors into consideration the influence that the described size for the treatment of each figure in the exposure field is subjected to parasitic light and exposure parameter, and determine the described exposure parameter for the treatment of exposure field again after the tolerance to the change in size of each figure.
Wherein, described simple graph is that dimension of picture is subjected to parasitic light and exposure parameter to influence identical figure.
Wherein, described exposure parameter comprises exposure dose and/or time shutter.
The present invention has a kind of exposure system of identical or relevant art feature, comprises exposure device, detection lug, storage unit, first computing unit and second computing unit; Detection lug wherein is used to detect the distribution situation of parasitic light; Storage unit is used to store the distribution situation of the parasitic light that is obtained by the detection lug detection and respectively treat the position of exposure field on substrate; First computing unit is used for parasitic light distribution situation and each the described position for the treatment of exposure field according to described memory cell storage, calculates each described parasitic light mean value for the treatment of exposure field respectively; Each described parasitic light mean value of exposure field for the treatment of that second computing unit is used for calculating according to described first computing unit is determined each described exposure parameter for the treatment of exposure field respectively; Exposure device, the exposure parameter that is used for calculating by described second computing unit exposes to each described exposure field for the treatment of respectively.
Wherein, described second computing unit is determined each described figure departure for the treatment of exposure field according to described parasitic light mean value earlier when determining each described exposure parameter for the treatment of exposure field; Determine each described exposure parameter for the treatment of exposure field according to each described described figure departure of exposure field for the treatment of again.
Can also comprise judging unit in this exposure system, described judging unit is used to judge describedly treat whether the figure of exposure field is simple graph: if described second computing unit can directly be determined the described exposure parameter for the treatment of exposure field according to described parasitic light mean value; If not, then described second computing unit is taken all factors into consideration the influence that the described size for the treatment of each figure of exposure field is subjected to parasitic light and exposure parameter, and determines the described exposure parameter for the treatment of exposure field again after the tolerance to the change in size of each figure.
Wherein, described simple graph is that dimension of picture is subjected to parasitic light and exposure parameter to influence identical figure.
Wherein, described second computing unit influences table and described exposure parameter according to the described parasitic light mean value of depositing in advance to first of dimension of picture influences table to second of dimension of picture and determines the described exposure parameter for the treatment of exposure field.
Wherein, described exposure parameter comprises exposure dose and/or time shutter.
Compared with prior art, the present invention has the following advantages:
The exposure method of photoetching of the present invention, utilize detection lug to obtain the distribution situation of parasitic light on entire substrate earlier, calculate the mean value of the parasitic light that each exposure field has again respectively, then, after of the influence of the parasitic light of considering this kind intensity to dimension of picture, oppositely adjust the same influential exposure parameter of dimension of picture,, improved the accuracy and the consistance of dimension of picture to remedy dimension of picture because of the deviation that parasitic light occurs to forming.
Exposure system of the present invention comprises detection lug, storage unit, first computing unit, second computing unit and exposure device; During its work, utilize detection lug to obtain the distribution situation of parasitic light on entire substrate earlier, and it is stored in the storage unit; Utilize first computing unit to calculate the mean value of the parasitic light that each exposure field has again, utilize second computing unit to obtain the exposure parameter of each corresponding exposure field according to the parasitic light mean value calculation of each exposure field, then, utilize exposure device respectively each exposure field to be exposed again by the exposure parameter of above-mentioned each exposure field that obtains.Adopt exposure system of the present invention, can remedy the influence of parasitic light, improve the accuracy and the consistance of dimension of picture the size of the figure of formation.
Description of drawings
Fig. 1 is the synoptic diagram of the existing parasitic light of explanation to the influence of dimension of picture;
Fig. 2 is the synoptic diagram of the exposure method in the explanation specific embodiment of the invention;
Fig. 3 is the process flow diagram of the exposure method of the specific embodiment of the invention;
Fig. 4 is illustrated as exposure dose in the specific embodiment of the invention to the synoptic diagram of the influence of dimension of picture;
Fig. 5 adopts behind the exposure method of the present invention parasitic light to the synoptic diagram of the influence of dimension of picture for explanation;
Fig. 6 is the synoptic diagram of the exposure system in the specific embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Disposal route of the present invention can be widely used in the every field; and can utilize many suitable material; be to be illustrated below by specific embodiment; certainly the present invention is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention far and away.
Secondly, the present invention utilizes synoptic diagram to describe in detail, when the embodiment of the invention is described in detail in detail, for convenience of explanation, each synoptic diagram can be disobeyed general ratio and be done local the amplification, should be with this as limitation of the invention, in addition, in the making of reality, should comprise the three dimensions size of length, width and the degree of depth.
The exposure method of photoetching of the present invention utilizes detection lug to detect earlier and obtains the distribution situation of parasitic light on substrate; Determine to treat the position of exposure field on the substrate of waiting to expose; Then, the distribution situation of the parasitic light that obtains according to detection and the position for the treatment of exposure field calculate the parasitic light mean value for the treatment of exposure field; Then, can determine the described exposure parameter for the treatment of exposure field according to the described parasitic light mean value of exposure field for the treatment of; By this exposure parameter the described exposure field for the treatment of is exposed again; Each exposure field on the substrate is repeated above-mentioned definite exposure field position, calculates parasitic light mean value, determines exposure parameter and step of exposing that each exposure field on described substrate is all finished exposure successively.Adopt exposure method of the present invention can remedy the back dimension of picture that forms of photoetching (exposure), improved the accuracy and the consistance of dimension of picture because of the deviation that parasitic light occurs.
Fig. 2 is the synoptic diagram of the exposure method of the explanation specific embodiment of the invention, and as shown in Figure 2,201 represent substrate among the figure, and 202 represent each exposure field.A substrate needs successively a plurality of exposure field to be carried out multiexposure, multiple exposure, and the distribution of the parasitic light on this substrate may be had nothing in common with each other for each exposure field.The used exposure parameter of each exposure field is identical in the existing exposure method, its be unified determined exposure parameter after, again by successively each exposure field being exposed shown in 211 arrows among the figure.Existing exposure method, do not consider the difference of the parasitic light that each exposure field on the same substrate is subjected to, therefore, the dimension of picture that adopts existing exposure method to obtain has the deviation of different situations, and this has caused the consistance of dimension of picture on the same substrate relatively poor.And in the exposure method of the present invention, according to the parasitic light distribution situation on the entire substrate 201, according to the order shown in 211 arrows among the figure, 202-1 begins by first exposure field, at the distribution of the parasitic light of each exposure field 202, respectively each exposure field has been carried out independent exposure parameter setting, overcome the defective in the above-mentioned existing exposure method, make the dimension of picture of each exposure field all more accurate, the inconsistency of dimension of picture has also obtained corresponding raising on the same substrate.
Fig. 3 is the process flow diagram of the exposure method of the specific embodiment of the invention, below in conjunction with Fig. 3 specific embodiments of the invention is described in detail.
At first, utilize detection lug that the distribution situation of parasitic light on substrate detected (S301).Have on this detection lug to be specifically designed to and detect spuious photodistributed test pattern, monitor, utilize conversion formula can obtain the distribution situation of parasitic light on entire substrate by change in size situation to the test pattern of entire substrate.Introduction for this test pattern, detection method and conversion formula in the prior art has a lot, and this is easy to understand and obtains for the ordinary skill in the art, does not repeat them here.
Obtain the distribution situation of the parasitic light on the substrate in detection after, substrate to be exposed is positioned in the exposure machine, determines to treat the position (S302) of exposure field on the substrate of waiting to expose.As shown in Figure 2, have a plurality of exposure field on the substrate, each exposure field can be positioned under the exposure region of exposure machine in turn carries out exposure-processed, because the present invention carries out exposure parameter to each exposure field respectively according to the parasitic light distribution situation in each exposure field to be provided with, this just need before exposure parameter is set, determine earlier to be ready to carry out exposure-processed treat the situation of exposure field on substrate (among the present invention be positioned on the substrate exposure field that to be ready exposing under the exposure region of exposure machine be called treat exposure field), could determine that like this this treats the parasitic light distribution situation in the exposure field, and further obtain this and treat parasitic light mean value in the exposure field.
After determining the position, the distribution situation of the parasitic light that obtains according to detection and the position for the treatment of exposure field calculate the parasitic light mean value (S303) that this treats exposure field.For entire substrate, parasitic light distribution thereon is uneven, if directly the parasitic light with each exposure field is considered as identical, the words of each exposure field being adjusted by the mean value unification of the parasitic light of entire substrate, will inevitably cause on the entire substrate dimension of picture of zones of different inconsistent, this is flagrant for the small size figure of dimensional requirement strictness.For this reason, the present invention has adopted the method for calculating parasitic light mean value at each exposure field respectively, has further improved the accuracy and the consistance of dimension of picture.
In addition, can see by Fig. 1, even parasitic light intensity is identical, for different figures, the variable quantity of its size also can be different, therefore, in the present embodiment, in order after exposure, to obtain dimension of picture more accurately, after calculating this parasitic light mean value for the treatment of exposure field, can carry out the judgement of a step figure earlier, judge whether the figure in this treats exposure field is simple graph (S304).In other embodiments of the invention, can this not judged yet, and the S306 step that directly enters the back.
So-called simple graph is the identical figure of influence that dimension of picture is subjected to parasitic light and exposure parameter in the present embodiment.If the figure in treating exposure field is identical figure, as be intensive bar pattern, or be groove figure between line end, it is identical that then its CD is subjected to the influence of parasitic light and exposure parameter, the S306 step that can directly enter the back is determined exposure parameter, if but the graph style in this treats exposure field and inequality, as existing intensive bar pattern, groove figure between line end is arranged again, the variation of its CD under the influence of identical parasitic light and exposure parameter is inequality, then need take all factors into consideration the CD situation of change of each figure and (S305) this moment to the tolerance situation (can judge according to its influence usually) of the change in size of each figure to device performance, obtain a compromise result, then, the S306 step that enters the back is again determined exposure parameter.
Then, according to the parasitic light mean value for the treatment of exposure field (can also be subjected to the Different Effects of parasitic light and the consideration of trading off to each figure in advance), determine the described exposure parameter (S306) for the treatment of exposure field by the tolerance to each figure CD variation of device performance decision for complex figure.Its concrete operation steps can be earlier according to treating that parasitic light mean value in the exposure field determines the departure of dimension of picture in it; Determine this suitable exposure parameter in place of waiting to expose according to this dimension of picture departure again.
Fig. 1 by the front can see that parasitic light can have influence on the size of figure, the dimension of picture generation deviation that obtains after the feasible exposure.Similarly, the change of exposure parameter (as exposure dose, time shutter etc.) also can make the size of the figure of exposure back formation change.
Fig. 4 is the synoptic diagram of the exposure dose in the explanation specific embodiment of the invention to the influence of dimension of picture, and as shown in Figure 4, horizontal ordinate has been represented the size of exposure dose among the figure, and ordinate has been represented the variation of dimension of picture.Not considering the influence of parasitic light, is 24.5mJ/cm at exposure dose
2The time, the various figures of formation are of a size of 65nm, and along with reducing of exposure dose, corresponding variation has also taken place in the size of figure.And along with reducing of exposure dose, the variation difference that the size of different graphic takes place.Among Fig. 4 401 represented the situation of change that the CD of the groove figure (butting gap) between line end reduces gradually along with the enhancing of exposure dose; 402, the situation of change that increases gradually along with the enhancing of exposure dose of 403 and 404 CD that represented intensive bar pattern (dense line), details in a play not acted out on stage, but told through dialogues bar pattern (dark field line) and bar shaped line end figure (butting line) respectively.Can see that the CD of various figures is along with the enhancing of parasitic light and reducing of exposure dose and produced just in time opposite variation tendency.
Be further described below in conjunction with Fig. 1 and Fig. 4: when detection lug detects the mean intensity obtain treating the parasitic light that exists in the exposure field and is 1%, can know that by Fig. 1 this parasitic light can make the live width of intensive bar pattern narrow down about 2nm, at this moment, in order to make this intensive bar pattern that live width still can approach design load---65nm under the situation of parasitic light existing, can be with the exposure dose of this exposure field by 24.5mJ/cm
2Be decreased to 24.1mJ/cm
2As shown in Figure 4, the variation of this exposure dose can make the live width of intensive bar pattern become about big 2nm, and this has just in time remedied the deviation of the figure live width that causes because of parasitic light, and the dimension of picture that obtains after the feasible exposure still can maintain the degree that conforms to substantially with design load.
After determining exposure parameter, this is treated exposure field expose (S307) according to this exposure parameter of determining.Fig. 5 is that parasitic light is to the synoptic diagram of the influence of dimension of picture behind the explanation employing exposure method of the present invention, and as shown in Figure 5, horizontal ordinate has been represented the relative intensity of parasitic light among the figure, and ordinate has been represented the variation of dimension of picture.Among the figure 501 represented the situation of change that the CD of the groove figure (buttinggap) between line end reduces gradually along with the enhancing of parasitic light; 502, the situation of change that increases gradually along with the enhancing of parasitic light of 503 and 504 CD that represented intensive bar pattern (dense line), details in a play not acted out on stage, but told through dialogues bar pattern (dark field line) and bar shaped line end figure (butting line) respectively.
Can see, after adopting exposure method of the present invention, parasitic light all has been contracted to small range to the influence of various dimension of picture, when reaching 5% as the relative intensity when parasitic light, all within 0.5nm, this has improved the accuracy and the consistance of dimension of picture to the deviation of each dimension of picture greatly.In addition, owing to the influence of parasitic light to dimension of picture diminishes, can reduce the requirement to other process conditions of photoetching process to a certain extent, promptly can obtain bigger process window, this is very valuable for strict photoetching process.
After treating exposure field and exposing, judge whether it treats exposure field (S308) for last, if to be last need expose treats exposure field to finish the exposure-processed (S310) to this substrate for it; If not, then move to the next one and treat exposure field, repeat above-mentioned definite exposure field position (S302), calculate parasitic light mean value (S303), judge figure (S304), determine exposure parameter (S306) and exposure steps such as (S307), till each exposure field on the described substrate is all finished exposing operation.
In the present embodiment, only determined to treat the positional information of exposure field in the S302 step, in other embodiments of the invention, also can in this step, directly determine the positional information of all exposure field, like this, when second later exposure field handled, need not pass through the S302 step once more, determine that with corresponding parasitic light distributed intelligence this parasitic light mean value (S303) for the treatment of exposure field gets final product and directly call this positional information for the treatment of exposure field.
In addition, also can directly in S302, S303, S304 and S306 step, determine the relevant information of burn-out field, and will store by the exposure parameter of the definite burn-out field of above-mentioned steps, then, in the step of exposure-processed, directly call the exposure parameter of each exposure field of having calculated and having stored again, successively each exposure field is carried out exposure-processed and get final product.Under the enlightenment of the specific embodiment of the invention, the extension of this application is easy to understand and realization for those of ordinary skills, does not repeat them here.
Notice, in the practical operation, not be used in each distribution of all carrying out parasitic light before substrate exposes of waiting to expose and detect, still, in order to prevent that reasons such as the exposure machine internal cause stains from causing its parasitic light situation that variation has taken place, and still need regularly detect the distribution situation of parasitic light.
The present invention also provides a kind of exposure system, Fig. 6 is the synoptic diagram of the exposure system in the specific embodiment of the invention, as shown in Figure 6, this exposure system comprises detection lug 601, storage unit 602, first computing unit 603, second computing unit 604 and exposure device 605.Detection lug 601 wherein is used to detect the distribution situation of parasitic light; Storage unit 602 is used to store distribution situation and the position of each exposure field on substrate of being detected the parasitic light that obtains by detection lug 601; First computing unit 603 is used for the parasitic light distribution situation according to described storage unit 602 stored, calculates the parasitic light mean value of each exposure field respectively; The parasitic light mean value that second computing unit 604 is used for each exposure field of calculating according to described first computing unit 603 is determined the exposure parameter of each exposure field respectively; Exposure device 605 is used for respectively each exposure field being exposed by the exposure parameter that described second computing unit 604 calculates.
In addition, can also deposit in advance in second computing unit that parasitic light mean value influences table to first of figure CD and exposure parameter influences table to second of figure CD, when determining the exposure parameter of each described exposure field, influence the figure departure that table is determined each described exposure field according to described parasitic light mean value by looking into first earlier; Described figure departure according to each described exposure field influences the exposure parameter that table is determined each described exposure field by looking into second again.
Can also comprise judging unit in this exposure system, described judging unit can be between first computing unit and second computing unit, described second computing unit is used to judge whether the figure of described exposure field is simple graph: if can directly be determined the exposure parameter of exposure field according to described parasitic light mean value; If not, then described second computing unit size of taking all factors into consideration each figure of described exposure field is subjected to determine exposure parameter again after the influence of parasitic light and exposure parameter and the tolerance to the change in size of each figure.
Notice that in the exposure system of the present invention, the direct positional information of burn-out field on substrate on storage unit 602 stored also can only be treated the positional information of exposure field in storage unit 602 stored.In addition, also can be chosen in each exposure field exposed before, with regard to the exposure parameter of the good all exposure field of calculated in advance, and be stored in the storage unit.When needs to which exposure field expose, directly the exposure parameter of this exposure field is accessed use and get final product.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (11)
1, a kind of exposure method of photoetching is characterized in that, comprises step:
Utilize detection lug to detect the distribution situation of parasitic light on substrate;
Determine to treat the position of exposure field on described substrate;
Detect the distribution situation and the described position of the parasitic light that obtains according to described detection lug, calculate the described parasitic light mean value for the treatment of exposure field;
Determine the described exposure parameter for the treatment of exposure field according to the described parasitic light mean value of exposure field for the treatment of;
According to described exposure parameter the described exposure field for the treatment of is exposed;
The next one that moves on the described substrate is treated exposure field, repeats above-mentionedly to determine to treat the exposure field position, calculates parasitic light mean value, determines exposure parameter and step of exposing, and each exposure field on described substrate is all finished exposure.
2, exposure method as claimed in claim 1 is characterized in that: determine the exposure parameter that each treats exposure field according to described parasitic light mean value, comprise step:
Determine the described figure departure for the treatment of exposure field according to described parasitic light mean value;
Determine the described exposure parameter for the treatment of exposure field according to the described described figure departure of exposure field for the treatment of.
3, exposure method as claimed in claim 1 is characterized in that: after the parasitic light mean value of exposure field is treated in calculating, also comprise step:
Judge describedly treat whether the figure in the exposure field is simple graph: if can directly determine the described exposure parameter for the treatment of exposure field according to described parasitic light mean value; If not, then take all factors into consideration the influence that the described size for the treatment of each figure in the exposure field is subjected to parasitic light and exposure parameter, and determine the described exposure parameter for the treatment of exposure field again after the tolerance to the change in size of each figure.
4, exposure method as claimed in claim 3 is characterized in that: described simple graph is that dimension of picture is subjected to parasitic light and exposure parameter to influence identical figure.
5, exposure method as claimed in claim 1 is characterized in that: described exposure parameter comprises exposure dose and/or time shutter.
6, a kind of exposure system comprises exposure device, it is characterized in that: also comprise detection lug, storage unit, first computing unit and second computing unit; Detection lug wherein is used to detect the distribution situation of parasitic light; Storage unit is used to store the distribution situation of the parasitic light that is obtained by the detection lug detection and respectively treat the position of exposure field on substrate; First computing unit is used for parasitic light distribution situation and each the described position for the treatment of exposure field according to described memory cell storage, calculates each described parasitic light mean value for the treatment of exposure field respectively; Each described parasitic light mean value of exposure field for the treatment of that second computing unit is used for calculating according to described first computing unit is determined each described exposure parameter for the treatment of exposure field respectively; Exposure device, the exposure parameter that is used for calculating by described second computing unit exposes to each described exposure field for the treatment of respectively.
7, exposure system as claimed in claim 6 is characterized in that: described second computing unit is determined each described figure departure for the treatment of exposure field according to described parasitic light mean value earlier when determining each described exposure parameter for the treatment of exposure field; Determine each described exposure parameter for the treatment of exposure field according to each described described figure departure of exposure field for the treatment of again.
8, exposure system as claimed in claim 6, it is characterized in that: also comprise judging unit, described judging unit is used to judge describedly treat whether the figure of exposure field is simple graph: if described second computing unit can directly be determined the described exposure parameter for the treatment of exposure field according to described parasitic light mean value; If not, then described second computing unit is taken all factors into consideration the influence that the described size for the treatment of each figure of exposure field is subjected to parasitic light and exposure parameter, and determines the described exposure parameter for the treatment of exposure field again after the tolerance to the change in size of each figure.
9, exposure system as claimed in claim 8 is characterized in that: described simple graph is that dimension of picture is subjected to parasitic light and exposure parameter to influence identical figure.
10, exposure system as claimed in claim 6 is characterized in that: described second computing unit influences table and described exposure parameter according to the described parasitic light mean value of depositing in advance to first of dimension of picture and second of dimension of picture is influenced table determines the described exposure parameter for the treatment of exposure field.
11, exposure system as claimed in claim 6 is characterized in that: described exposure parameter comprises exposure dose and/or time shutter.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445855A (en) * | 2010-10-14 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | Double-layer exposure compensation method |
| CN106773555A (en) * | 2017-03-21 | 2017-05-31 | 上海华力微电子有限公司 | Compensation causes the method for exposure error by projective lens scattering light |
| WO2020051982A1 (en) * | 2018-09-11 | 2020-03-19 | 惠科股份有限公司 | Method for generating exposure compensation table, method for photoresist exposure compensation, and exposure machine |
-
2007
- 2007-07-31 CN CN200710044562A patent/CN100590532C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445855A (en) * | 2010-10-14 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | Double-layer exposure compensation method |
| CN102445855B (en) * | 2010-10-14 | 2013-09-11 | 中芯国际集成电路制造(上海)有限公司 | Double-layer exposure compensation method |
| CN106773555A (en) * | 2017-03-21 | 2017-05-31 | 上海华力微电子有限公司 | Compensation causes the method for exposure error by projective lens scattering light |
| CN106773555B (en) * | 2017-03-21 | 2019-03-26 | 上海华力微电子有限公司 | The method that compensation causes exposure error by projective lens scattering light guide |
| WO2020051982A1 (en) * | 2018-09-11 | 2020-03-19 | 惠科股份有限公司 | Method for generating exposure compensation table, method for photoresist exposure compensation, and exposure machine |
| US11243474B2 (en) | 2018-09-11 | 2022-02-08 | HKC Corporation Limited | Method for generating exposure compensation table, method for photoresist exposure compensation, and exposure machine |
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| Publication number | Publication date |
|---|---|
| CN100590532C (en) | 2010-02-17 |
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